2N4427 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS. Features Silicon NPN, To-39 packaged VHF/UHF Transistor
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1 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features Silicon NPN, To39 packaged VHF/UHF Transistor 1 Watt Minimum Power 175 MHz 500 MHz CurrentGain Bandwidth 50mA Power Gain, G PE = 10dB 175 MHz 1. Emitter 2. Base 3. Collector TO39 DESCRIPTION: Silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; predriver, driver, and output stages. Also suitable for oscillator and frequencymultiplier functions. ABSOLUTE MAXIMUM RATINGS (Tcase = 25 C) Symbol Parameter Value Unit V CEO CollectorEmitter 20 Vdc V CBO CollectorBase Voltage 40 Vdc V EBO EmitterBase Voltage 2.0 Vdc I C Collector Current 400 ma Thermal Data P D Total Device T A = 25ºC Derate above 25ºC Watts mw/ ºC
2 ELECTRICAL SPECIFICATIONS (Tcase = 25 C) STATIC (off) Symbol Test Conditions Value BVCER Min. Typ. Max. Unit CollectorEmitter Sustaining Voltage (IC = 5.0 madc, RBE = 10 ohms) 40 Vdc BVCEO ICEO ICEX IEBO CollectorEmitter Sustaining Voltage (IC=5.0 madc, IB=0) 20 Vdc Collector Cutoff Current (VCE = 12 Vdc, IB = 0) 20 µa Collector Cutoff Current (VCE = 40 Vdc, VBE = 1.5 Vdc) 100 µa Emitter Cutoff Current (VEB = 2.0 Vdc, IC = 0) 100 µa (on) HFE DC Current Gain (IC = 100 madc, VCE = 5.0 Vdc) (IC = 360 madc, VCE = 5.0 Vdc) VCE(sat) CollectorEmitter Saturation Voltage (IC = 100 madc, IB = 20 madc) 0.5 Vdc DYNAMIC Symbol Test Conditions Value f T Min. Typ. Max. Unit CurrentGain Bandwidth Product (IC = 50 madc, VCE = 15 Vdc, f = 200 MHz) 500 MHz COB Output Capacitance (VCB = 12 Vdc, IE = 0, f = 1.0 MHz) 4.0 pf
3 ELECTRICAL SPECIFICATIONS (Tcase = 25 C) FUNCTIONAL Symbol Test Conditions Value G PE Power Gain Test CircuitFigure 1 Pin = 0.1 W, VCE = 12Vdc f = 175 MHz Pout Output Power Test CircuitFigure 1 Pin = 0.1 W, VCE = 12Vdc f = 175 MHz η C Pin = 0.1 W, VCE = 12Vdc Collector Efficiency Test CircuitFigure 1 f = 175 MHz Min. Typ. Max. Unit 10 db 1.0 Watts 45 % Pout (Watts) Typical device performance Pin (mwatts)
4 C5 C6 V cc = 12V L 3 C3 P IN (R S =50 OHMS) C1 L1 C4 L 4 P OUT (R L =50 OHMS) C2 L 2 Figure MHz RF AMPLIFIER CIRCUIT FOR G PE, P OUT, AND EFFICIENCY SPECIFICATIONS. L 1: 2 TURNS No. 16 wire, 3/16 ID, 1/4 long L 2: Ferrite choke, Z=450 ohms L 3: 2 TURNS No. 16 wire, 1/4 ID, 1/4 long Capacitor values in pf unless L 4: 4 TURNS No. 16 wire, 3/8 ID, 3/8 long Tuning capacitors are air variable otherwise indicated..
5 RF Low Power PA, LNA, and General Purpose Discrete Selector Guide Package Device Type GPE Freq (MHz) Pout (watts) GPE (db) Efficiency (%) GPE VCC BVCEO IC max (ma) Packag Device Type Freq (MHz) NF NF (db) IC (ma) NF VCE GN (db) Gu Max (db) Ftau (MHz) Ccb(pF) BVCEO IC max (ma) SO8 MRF4427, R2 NPN TO39 2N4427 NPN POWER MACRO MRF553 NPN POWER MACRO MRF553T NPN TO39 MRF607 NPN TO39 2N6255 NPN TO72 2N5179 NPN MACRO X MRF559 NPN MACRO X MRF559 NPN TO39 2N3866A NPN SO8 MRF3866, R1, R2 NPN POWER MACRO MRF555 NPN POWER MACRO MRF555T NPN TO39 2N5109 NPN TO39 MRF5943C NPN SO8 MRF5943, R1, NPN R2 TO72 2N5179 NPN TO72 2N2857 NPN TO39 MRF517 NPN TO72 MRF904 NPN TO72 2N6304 NPN MACRO BFR91 NPN T 11 MACRO T BFR96 NPN SO8 MRF5812, R1, NPN R MACRO MRF581A NPN X Macro BFR90 NPN TO72 BFY90 NPN TO72 MRF914 NPN MACRO MRF581 NPN X TO39 MRF586 NPN MACRO X MRF559 NPN MACRO X MRF559 NPN SO8 MRF8372,R1,R2 NPN POWER MACRO MRF557 NPN POWER MACRO MRF557T NPN MACRO X MRF951 NPN MACRO X MRF571 NPN MACRO T BFR91 NPN MACRO T BFR90 NPN TO39 MRF545 PNP TO39 MRF544 NPN RF (Low Power PA / General Purpose) Selection Guide RF (LNA / General Purpose) Selection Guide Low Cost RF Plastic Package Options Macro T Macro X Power SO8
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2N3866 / 2N3866A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features Silicon NPN, To39 packaged VHF/UHF Transistor Specified 400 MHz, 28Vdc Characteristics Output Power = 1.0 Watt Minimum Gain = 10 db Efficiency = 45%
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MRF5943, R1, R2 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features Low Cost SO-8 Plastic Surface Mount Package.
MRF581 MRF581G MRF581A MRF581AG
G RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS *G Denotes RoHS Compliant, Pb free Terminal Finish Features Low Noise - 2.5 db @ 500 MHZ Gain at Optimum Noise Figure = 15.5 db @ 500 MHz Ftau - 5.0 GHz
140 COMMERCE DRIVE MONTGOMERYVILLE, PA PHONE: (215) FAX: (215)
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 G * G Denotes RoHS Compliant, Pb Free Terminal Finish Features
SS8050. V CE =1V, I C =5mA V CE =1V, I C =100mA. 9.0 pf f=1mhz f T Current Gain Bandwidth Product V CE =10V, I C =50mA MHz
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PD Operating Junction and Storage Temperature Range TJ, Tstg 65 to +150 C
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techniques, and gold metalization in the fabrication of this device.
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TIP120, TIP121, TIP122,
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Please call sales office for
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MPSA44. High Voltage Transistor. NPN Silicon MAXIMUM RATINGS. MARKING DIAGRAM THERMAL CHARACTERISTICS ORDERING INFORMATION
Preferred Device High Voltage Transistor NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage V CEO 400 Vdc CollectorBase Voltage V CBO 500 Vdc EmitterBase Voltage V EBO 6.0 Vdc
Silicon Bipolar High f T Low Noise Medium Power 12 Volt Transistors
Silicon Bipolar High f T Low Noise Medium Power 1 Volt Transistors Features Low Phase Noise Oscillator Transistor mw Driver Amplifier Transistor Operation to GHz Available as Available in Hermetic Surface
SEMICONDUCTOR TECHNICAL DATA
SEMICONDUCTOR TECHNICAL DATA Order this document by MJE243/D... designed for low power audio amplifier and low current, high speed switching applications. High Collector Emitter Sustaining Voltage VCEO(sus)
BD809 (NPN), BD810 (PNP) Plastic High Power Silicon Transistors 10 AMPERE POWER TRANSISTORS 80 VOLTS 90 WATTS
BD89 (NPN), BD8 (PNP) Plastic High Power Silicon Transistors These devices are designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. Features High DC
TIP120, TIP121, TIP122,
SEMICONDUCTOR TECHNICAL DATA Order this document by TIP120/D... designed for general purpose amplifier and low speed switching applications. High DC Current Gain hfe = 2500 (Typ) @ IC = 4.0 Adc Collector
BC857BTT1G. General Purpose Transistor. PNP Silicon
General Purpose Transistor PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT46/SC75 which is designed for low power surface mount applications.
UNISONIC TECHNOLOGIES CO., LTD MJE13007D NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD MJE13007D NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007D is designed for high-voltage, high-speed power switching inductive
Small Signal General Purpose Transistors (PNP) BC556/BC557/BC558. Features. Mechanical Data. Maximum Ratings (T Ambient=25ºC unless noted otherwise)
Small Signal General Purpose Transistors (PNP) Small Signal General Purpose Transistors (PNP) Features PNP Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications RoHS compliance Mechanical
2SC6033 2SC6033. High-Speed Swtching Applications DC-DC Converter Applications Storobe Flash Applications. Maximum Ratings (Ta = 25 C)
TOSHIBA Transistor Silicon NPN Epitaxial Type SC633 HighSpeed Swtching Applications DCDC Converter Applications Storobe Flash Applications High DC current gain: hfe = to 4 (IC =.3 A) Low collectoremitter
UNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB772 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator.
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
NPN Silicon RF Transistor For IF amplifiers in TVsat tuners and for VCR modulators Pbfree (RoHS compliant) package 1) Qualified according AEC Q101 1 2 ESD (Electrostatic discharge) sensitive device, observe
PD Storage Temperature Range Tstg 65 to +150 C Operating Junction Temperature TJ 200 C
SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF Line Designed for 12.5 Volt UHF large signal amplifier applications in industrial and commercial FM equipment operating to 5 MHz. Guaranteed
MJE15028, MJE15030 (NPN), MJE15029, MJE15031 (PNP) Complementary Silicon Plastic Power Transistors
MJE1528, MJE15 (NPN), MJE1529, MJE151 (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use as highfrequency drivers in audio amplifiers. Features High Current Gain Bandwidth
MMBT2222A SMALL SIGNAL NPN TRANSISTOR
SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Type Marking M22 SILICON EPITAXIAL PLANAR NPN TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE & REEL PACKING THE PNP COMPLEMENTARY
COLLECTOR BASE EMITTER. mw mw/ C PD PD Watt. Characteristic Symbol Min Typ Max Unit V(BR)CEO BC338 V(BR)CES BC338. V(BR)EBO 5.
SEMICONDUCTOR TECHNICAL DATA Order this document by /D NPN Silicon COLLECTOR 2 BASE EMITTER MAXIMUM RATINGS Rating Symbol Unit Collector Emitter Voltage VCEO 45 25 Vdc Collector Base Voltage VCBO 5 Vdc
DATA SHEET. 2N3553 Silicon planar epitaxial overlay transistor DISCRETE SEMICONDUCTORS Oct 27
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of October 1981 File under Discrete Semiconductors, SC8a 1995 Oct 27 APPLICATIONS The is intended for use in VHF and UHF transmitting applications. DESCRIPTION
Type Marking Pin Configuration Package BFR92P GFs 1=B 2=E 3=C SOT23
NPN Bipolar RF Transistor For broadband amplifiers up to 2 GHz and fast nonsaturated switches at collector currents from 0.5 ma to 20 ma 3 1 2 Pbfree (RoHS compliant) package Qualification report according
DATA SHEET P D * mw C/W. Packing. Packing SOT-23 SOT /Reel 3000/Reel SOT-23 SOT /Reel 3000/Reel SOT-23.
DATA SHEET SEMICONDUCTOR NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor
LMUN2211LT1 SERIES. NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LESHAN RADIO COMPANY, LTD.
NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT
BC856BDW1T1, BC857BDW1T1 Series, BC858CDW1T1 Series
BC856BDW1T1, BC857BDW1T1 Series, BC858CDW1T1 Series Preferred Devices Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed
SEMICONDUCTOR TECHNICAL DATA
SEMICONDUCTOR TECHNICAL DATA Order this document by MJE700/D... designed for general purpose amplifier and low speed switching applications. High DC Current Gain hfe = 2000 (Typ) @ IC = A Monolithic Construction
LIFETIME BUY LAST ORDER: 25SEP01 LAST SHIP: 26MAR02 MMBR941 MRF947 SERIES. The RF Line SEMICONDUCTOR TECHNICAL DATA
SEMICONDUCTOR TECHNICAL DATA Order this document by MMBR91LT1/D The RF Line Designed or use in high gain, low noise small signal ampliiers. This series eatures excellent broadband linearity and is oered