RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
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1 140 COMMERCE DRIVE MONTGOMERYVILLE, PA PHONE: (215) FAX: (215) MRF5943, R1, R2 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features Low Cost SO-8 Plastic Surface Mount Package. S-Parameter Characterization Tape and Reel Packaging Options Available Maximum Available Gain = 300MHz SO-8 R1 suffix Tape and Reel, 500 units R2 suffix Tape and Reel, 2500 units DESCRIPTION: Designed for general-purpose RF amplifier applications, such as pre-drivers, drivers, and oscillators. ABSOLUTE MAXIMUM RATINGS (Tcase = 25 C) Parameter V CEO Collector-Emitter Voltage 30 Vdc V CBO Collector-Base Voltage 40 Vdc V EBO Emitter-Base Voltage 3.5 Vdc I C Collector Current 400 ma Thermal Data P D Total Device TC = 25ºC Derate above 25ºC Watts mw/ ºC T stg R θja Storage Temperature Thermal Resistance, Junction to Ambient 150 ºC 125 ºC/W
2 ELECTRICAL SPECIFICATIONS (Tcase = 25 C) STATIC (off) BVCBO BVEBO ICBO ICEO Collector-Emitter Breakdown Voltage (IC = 5.0 madc, IB = 0) Vdc Collector-Base Breakdown Voltage (IC = 0.1 madc, IE = 0) Vdc Emitter-Base Breakdown Voltage (IE = 0.1 madc, IC = 0) Vdc Collector Cutoff Current (VCB = 20 Vdc, VBE = 0 Vdc) ma Collector Cutoff Current (VCE = 20 Vdc, VBE = 0 Vdc) ma (on) HFE VCE(sat) VBE(sat) DC Current Gain (IC = 50 madc, VCE = 15 Vdc) Collector-emitter Saturation Voltage (IC = 100 madc, IB = 10 ma).2 Vdc Collector-emitter Saturation Voltage (IC = 100 madc, IB = 10 ma) 1.0 Vdc DYNAMIC Ftau Current-Gain Bandwidth Product (IC = 35 madc, VCE = 15 Vdc, f = 100 MHz) GHz
3 FUNCTIONAL G U max MAG Maximum Unilateral Gain IC = 35 madc, VCE = 15 Vdc, f = 300 MHz db Maximum Available Gain IC = 35 madc, VCE = 15 Vdc, f = 300 MHz db S 21 2 Insertion Gain IC = 35 madc, VCE = 15 Vdc, f = 300 MHz db Table 1. Common Emitter VCE = 15 V, IC = 35 ma f S11 S21 S12 S22 (MHz) S11 φ S21 φ S12 φ S22 φ
4 RF Low Power PA, LNA, and General Purpose Discrete Selector Guide Package Device Type GPE Freq (MHz) Pout (watts) GPE (db) Efficiency (%) GPE VCC IC max (ma) Package Device Type Freq (MHz) NF (db) NF IC (ma) NF VCE GN (db) Gu Max (db) Ftau (MHz) Ccb(pF) IC max (ma) SO-8 MRF4427, R2 NPN TO-39 2N4427 NPN POWER MACRO MRF553 NPN POWER MACRO MRF553T NPN TO-39 MRF607 NPN TO-39 2N6255 NPN TO-72 2N5179 NPN MACRO X MRF559 NPN MACRO X MRF559 NPN TO-39 2N3866A NPN SO-8 MRF3866, R1, R2 NPN POWER MACRO MRF555 NPN POWER MACRO MRF555T NPN MACRO X MRF559 NPN MACRO X MRF559 NPN SO-8 MRF8372,R1,R2 NPN POWER MACRO MRF557 NPN POWER MACRO MRF557T NPN TO-39 2N5109 NPN TO-39 MRF5943C NPN SO-8 MRF5943, R1, R2 NPN TO-72 2N5179 NPN TO-72 2N2857 NPN TO-39 MRF517 NPN TO-72 MRF904 NPN TO-72 2N6304 NPN MACRO T BFR91 NPN MACRO T BFR96 NPN SO-8 MRF5812, R1, R2 NPN MACRO X MRF581A NPN Macro BFR90 NPN TO-72 BFY90 NPN TO-72 MRF914 NPN MACRO X MRF581 NPN TO-39 MRF586 NPN MACRO X MRF951 NPN MACRO X MRF571 NPN MACRO T BFR91 NPN MACRO T BFR90 NPN TO-39 MRF545 PNP TO-39 MRF544 NPN RF (Low Power PA / General Purpose) Selection Guide RF (LNA / General Purpose) Selection Guide Low Cost RF Plastic Package Options Macro T Macro X Power Macro SO-8
5 PIN 1. EMITTER 2. COLLECTOR 3. COLLECTOR 4. EMITTER 5. EMITTER 6. BASE 7. BASE 8. EMITTER
MRF581 MRF581G MRF581A MRF581AG
G RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS *G Denotes RoHS Compliant, Pb free Terminal Finish Features Low Noise - 2.5 db @ 500 MHZ Gain at Optimum Noise Figure = 15.5 db @ 500 MHz Ftau - 5.0 GHz
2N3866 / 2N3866A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features Silicon NPN, To39 packaged VHF/UHF Transistor Specified 400 MHz, 28Vdc Characteristics Output Power = 1.0 Watt Minimum Gain = 10 db Efficiency = 45%
2N4427 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS. Features Silicon NPN, To-39 packaged VHF/UHF Transistor
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features Silicon NPN, To39 packaged VHF/UHF Transistor 1 Watt Minimum Power Output @ 175 MHz 500 MHz CurrentGain Bandwidth Product @ 50mA Power Gain, G PE
140 COMMERCE DRIVE MONTGOMERYVILLE, PA PHONE: (215) FAX: (215)
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 G * G Denotes RoHS Compliant, Pb Free Terminal Finish Features
SS8050. V CE =1V, I C =5mA V CE =1V, I C =100mA. 9.0 pf f=1mhz f T Current Gain Bandwidth Product V CE =10V, I C =50mA MHz
SS8050 SS8050 2W Output Amplifier of Portable Radios in Class B Push-pull Operation. Complimentary to Collector Current: I C =.5A Collector Power Dissipation: P C =2W (T C =25 C). Emitter 2. Base 3. Collector
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PD Operating Junction and Storage Temperature Range TJ, Tstg 65 to +150 C
SEMICONDUCTOR TECHNICAL DATA Order this document by MRF4427/D The RF Line Designed for amplifier, frequency multiplier, or oscillator applications in industrial equipment constructed with surface mount
Up to 6 GHz Medium Power Silicon Bipolar Transistor. Technical Data AT Plastic Package
Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-286 Features High Output Power: 2.5 dbm Typical P 1 db at 2. GHz High Gain at 1 db Compression: 13.5 db Typical G 1 db at 2. GHz Low
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Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip. Technical Data AT-41400
Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip Technical Data AT-1 Features Low Noise Figure: 1.6 db Typical at 3. db Typical at. GHz High Associated Gain: 1.5 db Typical at 1.5 db Typical at. GHz
Surface Mount Low Noise Silicon Bipolar Transistor Chip. Technical Data AT-41411
Surface Mount Low Noise Silicon Bipolar Transistor Chip Technical Data AT-111 Features Low Noise Figure: 1. db Typical at 1. GHz 1.8 db Typical at 2. GHz High Associated Gain: 18. db Typical at 1. GHz
Silicon Bipolar Low Noise Microwave Transistors
Silicon Bipolar Low Noise Microwave Transistors MP42141 Features Case Styles Low Intrinsic Noise Figure (2.3dB Typical @ 1.0 GHz) High Power Gain At 1.0 GHz 18.0 db Typical Gold Metalization Hermetic and
3 Volt, Low Noise High ft Silicon Transistor. MP4T6310 Series. Features SOT-23. Description SOT-143. Chip
3 Volt, Low Noise High ft Silicon Transistor Features High Performance at VCE = 3V Low Noise Figure at Small Currents (.3- ma) High Gain (14 db) at 1mA Collector Current High ft (14 GHz) Available on Tape
NPN SILICON OSCILLATOR AND MIXER TRANSISTOR
NPN SILICON OSCILLATOR AND MIXER TRANSISTOR NE944 SERIES FEATURES LOW COST HIGH GAIN BANDWIDTH PRODUCT: ft = MHz TYP LOW COLLECTOR TO BASE TIME CONSTANT: CC r b'b = 5 ps TYP LOW FEEDBACK CAPACITANCE: CRE=.55
ARCHIVE INFORMATION MMBR951 MRF957. Freescale Semiconductor, I. The RF Line SEMICONDUCTOR TECHNICAL DATA
nc. SEMICONDUCTOR TECHNICAL DATA Order this document by MMBR9/D The RF Line Designed for use in high gain, low noise small signal amplifiers. This series features excellent broadband linearity and is offered
NPN SILICON HIGH FREQUENCY TRANSISTOR 2.0 ± ± 0.1
FEATURES SMALL PACKAGE STYLE: NE686 Die in a mm x 1.5 mm package LOW NOISE FIGURE: NF = 1.5 db TYP at GHz HIGH GAIN: S1E = 9 db TYP at GHz HIGH GAIN BANDWIDTH: ft = 13 GHz LOW CURRENT OPERATION DESCRIPTION
UNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB772 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator.
MCC. 2N5401 )HDWXUHV. PNP Silicon Amplifier Transistor 625mW 0HFKDQLFDO'DWD TO-92
omponents 20736 Marilla Street Chatsworth!"# $%!"# 2N5401 )HDWXUHV Through Hole Package 1 o C Junction Temperature Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)
Part Number Order Number Package Quantity Supplying Form. (Pb-Free)
NESGM NPN SiGe RF Transistor for Low Noise, High-in Amplification Flat-Lead -Pin Thin-Type Super Minimold (M) FEATURES The device is an ideal choice for low noise, high-gain at low current amplifications.
techniques, and gold metalization in the fabrication of this device.
Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip Technical Data AT-42 Features High Output Power: 21. dbm Typical P 1 db at 2. GHz 2.5 dbm Typical P 1 db at 4. GHz High Gain at 1 db Compression:
NPN Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS. ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted)
SEMICONDUCTOR TECHNICAL DATA Order this document by /D NPN Silicon COLLECTOR 2 BASE EMITTER MAXIMUM RATINGS Rating Symbol 546 547 548 Unit Collector Emitter oltage CEO 65 45 dc Collector Base oltage CBO
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LMUN2211LT1 SERIES. NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LESHAN RADIO COMPANY, LTD.
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UNISONIC TECHNOLOGIES CO., LTD /93 HIGH VOLTAGE PNP TRANSISTOR DESCRIPTION The /93 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. FEATURES * High
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MJE15028 MJE AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON VOLTS 50 WATTS MAXIMUM RATINGS THERMAL CHARACTERISTICS
... designed for use as high frequency drivers in audio amplifiers. DC Current Gain Specified to 4.0 Amperes hfe = 40 (Min) @ IC = 3.0 Adc = 20 (Min) @ IC = 4.0 Adc Collector Emitter Sustaining Voltage
Data Sheet. AT Up to 6 GHz Medium Power Silicon Bipolar Transistor. Features. Description. 100 mil Package. High Output Power:
AT-1 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Description Avago s AT-1 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-1 is housed
UNISONIC TECHNOLOGIES CO., LTD
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UHF POWER TRANSISTOR
NPN SiGe RF TRANSISTOR The is a low cost, NPN medium power SiGe HBT(Hetero-Junction Bipolar Transistor) encapsulated in a plastic SOT-3 SMD package. The can be used as a driver device or an output device,
TO-92 SOT-23 Mark: 3B. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
PN98 Discrete POWER & Signal Technologies MMBT98 C C B E TO-92 SOT-23 Mark: 3B B E This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the.0 ma to 30
100 Vdc Collector Base Voltage Emitter Base Voltage Collector Current Continuous. Adc Peak. Watts Derate above 25 C. Watts 25 C
... designed for low power audio amplifier and low current, high speed switching applications. High Collector Emitter Sustaining Voltage VCEO(sus) = 100 (Min) MJE243, MJE253 High DC Current Gain @ IC =
1 AMPERE GENERAL PURPOSE POWER TRANSISTORS VOLTS 30 WATTS *MAXIMUM RATINGS THERMAL CHARACTERISTICS (2)
...designed for driver circuits, switching, and amplifier applications. These high performance plastic devices feature: Low Saturation Voltage VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp Excellent Power Dissipation
Silicon Bipolar High f T Low Noise Medium Power 12 Volt Transistors
Silicon Bipolar High f T Low Noise Medium Power 1 Volt Transistors Features Low Phase Noise Oscillator Transistor mw Driver Amplifier Transistor Operation to GHz Available as Available in Hermetic Surface
PD Characteristic Symbol Min Typ Max Unit. V(BR)CEO 15 Vdc. V(BR)CBO 20 Vdc. V(BR)EBO 3.0 Vdc. ICBO 100 nadc. ft 4.5 GHz. Ccb
SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF Line The transistor uses the same state of the art microwave transistor chip which features fine line geometry, ion implanted arsenic emitters
LIFETIME BUY LAST ORDER: 25SEP01 LAST SHIP: 26MAR02 MMBR941 MRF947 SERIES. The RF Line SEMICONDUCTOR TECHNICAL DATA
SEMICONDUCTOR TECHNICAL DATA Order this document by MMBR91LT1/D The RF Line Designed or use in high gain, low noise small signal ampliiers. This series eatures excellent broadband linearity and is oered
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MAXIMUM RATINGS Rating Symbol MPS650 MPS750 MPS651 MPS751 Collector Emitter Voltage VCE 40 60 Vdc Collector Base Voltage VCB 60 80 Vdc Emitter Base Voltage VEB 5.0 Vdc Collector Current Continuous IC 2.0
TIP120, TIP121, TIP122,
... designed for general purpose amplifier and low speed switching applications. High DC Current Gain hfe = 2500 (Typ) @ IC = 4.0 Adc Collector Emitter Sustaining Voltage @ 100 madc VCEO(sus) = 60 Vdc
MJD47 MJD50. DPAK For Surface Mount Applications SEMICONDUCTOR TECHNICAL DATA NPN SILICON POWER TRANSISTORS 1 AMPERE 250, 400 VOLTS 15 WATTS
SEMICONDUCTOR TECHNICAL DATA Order this document by MJD47/D DPAK For Surface Mount Applications Designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications.
DATA SHEET P D * mw C/W. Packing. Packing SOT-23 SOT /Reel 3000/Reel SOT-23 SOT /Reel 3000/Reel SOT-23.
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General Purpose Transistor
General Purpose Transistor Pb Free Package May be Available. The G Suffix Denotes a Pb Free Lead Finish We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive
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2N5194 2N for use in power amplifier and switching circuits, excellent safe area limits. Complement to NPN 2N5191, 2N5192
... for use in power amplifier and switching circuits, excellent safe area limits. Complement to NPN 2N5191, 2N5192 ÎÎ *MAXIMUM RATINGS ÎÎ Rating ÎÎ Symbol Î 2N5194 Î Unit ÎÎ Collector Emitter Voltage
DATA SHEET. Embossed tape, 8 mm wide, pin No. 3 (collector) facing the perforation
DATA SHEET SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES Low current consumption and high gain S21e 2 =.5 dbtyp. @,
UNISONIC TECHNOLOGIES CO., LTD PN2222A NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD PN2222A NPN GENERAL PURPOSE AMPLIFIER FEATURES * This device is for use as a medium power amplifier and switch requiring collector currents up to 5mA. SOT-89 *Pb-free plating
Please call sales office for
NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE SERIES FEATURES HIGH INSERTION GAIN: 8.5 db at 5 MHz LOW NOISE FIGURE:.5 db at 5 MHz HIGH POWER GAIN: db at GHz LARGE DYNAMIC RANGE: 9 dbm at db, GHz Gain
Dual General Purpose Transistors
DATA SHEET SEMICONDUCTOR Dual General Purpose Transistors NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT 363/SC 88 which is designed for
NPN Silicon ON Semiconductor Preferred Device
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DATA SHEET HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD
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Bias Resistor Transistor
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MCH5541 PNP/NPN Bipolar Transistor ( )30V, ( )700mA, VCE(sat) ; ( 220)190mV (max)
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MMUN Series Bias Resistor Transistor NPN Silicon P b Lead(Pb)Free BASE COLLECTOR R R EMITTER SOT MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage VCEO 5 Vdc CollectorBase Voltage VCBO
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Low Noise Transistor PNP Silicon Features NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ1 Qualified and PPAP Capable These Devices are PbFree,
COLLECTOR BASE EMITTER BC 557 BC556. mw mw/ C PD PD Characteristic Symbol Min Typ Max Unit V(BR)CEO BC557 BC558 V(BR)CBO BC557 BC558
SEMICONDUCTOR TECHNICAL DATA Order this document by /D PNP Silicon COLLECTOR 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol BC 556 BC 557 BC 558 Unit Collector Emitter oltage CEO 65 45 3 dc Collector Base
SEMICONDUCTOR TECHNICAL DATA
SEMICONDUCTOR TECHNICAL DATA Order this document by MJE243/D... designed for low power audio amplifier and low current, high speed switching applications. High Collector Emitter Sustaining Voltage VCEO(sus)
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Darlington Transistor TO-3
Description Designed for use as output devices in complementary general purpose amplifier applications. Features: High gain darlington performance High DC current gain hfe = 1,000 (Minimum) at Ic = 20A
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is a Preferred Device NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage VCEO 40 Vdc CollectorBase Voltage VCBO 60 Vdc EmitterBase Voltage VEBO 6.0 Vdc Collector Current Continuous
2N5883 2N5884 SEMICONDUCTOR TECHNICAL DATA
SEMICONDUCTOR TECHNICAL DATA Order this document by 2N5883/D... designed for general purpose power amplifier and switching applications. Low Collector Emitter Saturation Voltage VCE(sat) = 1. Vdc, (max)
UNISONIC TECHNOLOGIES CO., LTD MJE13007D NPN SILICON TRANSISTOR
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Preferred Device PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage VCEO 40 Vdc CollectorBase Voltage VCBO 40 Vdc EmitterBase Voltage VEBO 5.0 Vdc Collector Current Continuous
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E C B E. TO-92 SOT-23 Mark: 2X. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
2N4401 MMBT4401 C 2N4401 / MMBT4401 E C B E TO-92 SOT-23 Mark: 2X B NPN General Pupose Amplifier This device is designed for use as a medium power amplifier and switch requiring collector currents up to
DATA SHEET HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD
DATA SHEET HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR PINS MINI MOLD SILICON TRANSISTOR SC957 FEATURES Low Noise, High Gain Low Voltage Operation Low Feedback Capacitance Cre =
2N5550 2N5551. NPN Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS
SEMICONDUCTOR TECHNICAL DATA Order this document by /D NPN Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE EMITTER MAXIMUM RATINGS Rating Symbol Unit Collector Emitter Voltage VCEO 40 60 Collector
Darlington Amplifier Transistor
We declare that the material of product compliance with RoHS requirements. ORDERING INFORMATION Device Marking Shipping MMBTA13LT1 1M 3000/Tape & Reel MMBTA14LT1 1N 3000/Tape & Reel MAXIMUM RATINGS Rating
COMPLEMENTARY NPN/PNP LOW SATURATION DUAL TRANSISTORS = -1.25A;
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NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
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Four Transistors Equal Power Each. Watts mw/ C Watts mw/ C TJ, Tstg 55 to +150 C. Characteristic Symbol Min Max Unit
PNP/NPN Silicon Voltage and current are negative for PNP transistors MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage VCEO 40 Vdc Collector Base Voltage VCB 40 Vdc Emitter Base Voltage
4 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 15 WATTS MAXIMUM RATINGS THERMAL CHARACTERISTICS. Figure 1. Power Derating BD787
... designed for lower power audio amplifier and low current, high speed switching applications. Low Collector Emitter Sustaining Voltage VCEO(sus) 60 Vdc (Min) BD787, BD788 High Current Gain Bandwidth
2N5400 2N5401. PNP Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS
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