140 COMMERCE DRIVE MONTGOMERYVILLE, PA PHONE: (215) FAX: (215)
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1 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS 140 COMMERCE DRIVE MONTGOMERYVILLE, PA PHONE: (215) FAX: (215) G * G Denotes RoHS Compliant, Pb Free Terminal Finish Features 12.5 V, 175 MHz Characteristics Output Power = 1.5 W Minimum Gain = 11.5 db Efficiency 60% (Typ) Cost Effective PowerMacro Package Electroless Tin Plated Leads for Improved Solderability Power Macro DESCRIPTION: Designed primarily for wideband large signal stages in the VHF frequency range. ABSOLUTE MAXIMUM RATINGS (Tcase = 25 C) Symbol Parameter Value Unit V CEO Collector-Emitter Voltage 16 Vdc V CBO Collector-Base Voltage 36 Vdc V EBO Emitter-Base Voltage 4.0 Vdc I C Collector Current 500 ma Thermal Data P D Total Device TC = 75ºC Derate above 75ºC Watts mw/ ºC
2 ELECTRICAL SPECIFICATIONS (Tcase = 25 C) G STATIC (off) Collector-Emitter Breakdown Voltage (IC=10 madc, IB=0) Vdc BVCES BVCBO BVEBO ICES (on) HFE Collector-Emitter Sustaining Voltage (IC = 5.0 madc, IB = 0) Vdc Collector-Base Breakdown Voltage (IE = 0, IC = 5 madc) Vdc Emitter-Base Breakdown Voltage (IE = 1 madc, IC = 0) Vdc Collector Cutoff Current (VCE = 15 Vdc, VBE = 0 Vdc) ma DC Current Gain (IC = 250 madc, VCE = 5.0 Vdc) Both DYNAMIC COB Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) pf
3 FUNCTIONAL G PE Pout = 1.5 W, VCE =12.5Vdc Power Gain Test Circuit-Figure 1 Collector Efficiency Test Circuit-Figure 1 η Pout = 1.5 W, VCE =12.5Vdc ψ Load Mismatch Test Circuit-Figure 1 VSWR 10:1 All Phase Angles Pout = 1.5 W, VCE =12.5Vdc G db % No Degradation in Output Power - Figure MHz Broadband Circuit Schematic. C1 36 pf Mini Underwood C2 47 pf Mini Underwood C3 91 pf Mini Underwood C4 68 pf Mini Underwood C5, C9 1.0 µf Erie Red Cap Capacitor C6, C µf, 35 V Tantulum C7 470 pf Chip Capacitor C pf Chip Capacitor R1 4.7 kω, 1/4 W R2 100 Ω, 1/4 W D1 1N4148 Diode L1 3 Turns, #18 AWG, 0.210, ID, 3/16, Length L2, L4, L7 0.62,, #18 AWG Wire Bent into V L3, L6 60 x 125 x 250 Mils Copper Pad on 27Mils L5 12 µh Molded Choke L8 7 Turns, #18 AWG, 0.170, ID, 7/16, Length L9 1.0,, #18 AWG Wire with 5 Ferrite Beads B Ferrite Bead Thick Alumina Substrate Board Material Glass Teflon, ε r = 2.56, t = ,
4 G RF Low Power PA, LNA, and General Purpose Discrete Selector Guide Package Device Type GPE Freq (MHz) Pout (watts) GPE (db) Efficiency (%) GPE VCC IC max (ma) Package Device Type Freq (MHz) NF (db) NF IC (ma) NF VCE GN (db) Gu Max (db) Ftau (MHz) Ccb(pF) IC max (ma) SO-8 MRF4427, R2 NPN TO-39 2N4427 NPN POWER MACRO NPN POWER MACRO T NPN TO-39 MRF607 NPN TO-39 2N6255 NPN TO-72 2N5179 NPN MACRO X MRF559 NPN MACRO X MRF559 NPN TO-39 2N3866A NPN SO-8 MRF3866, R1, R2 NPN POWER MACRO MRF555 NPN POWER MACRO MRF555T NPN MACRO X MRF559 NPN MACRO X MRF559 NPN SO-8 MRF8372,R1,R2 NPN POWER MACRO MRF557 NPN POWER MACRO MRF557T NPN TO-39 2N5109 NPN TO-39 MRF5943C NPN SO-8 MRF5943, R1, R2 NPN TO-72 2N5179 NPN TO-72 2N2857 NPN TO-39 MRF517 NPN TO-72 MRF904 NPN TO-72 2N6304 NPN MACRO T BFR91 NPN MACRO T BFR96 NPN SO-8 MRF5812, R1, R2 NPN MACRO X MRF581A NPN Macro BFR90 NPN TO-72 BFY90 NPN TO-72 MRF914 NPN MACRO X MRF581 NPN TO-39 MRF586 NPN MACRO X MRF951 NPN MACRO X MRF571 NPN MACRO T BFR91 NPN MACRO T BFR90 NPN TO-39 MRF545 PNP TO-39 MRF544 NPN RF (Low Power PA / General Purpose) Selection Guide RF (LNA / General Purpose) Selection Guide Low Cost RF Plastic Package Options Macro T Macro X Power Macro SO-8
5 G PIN 1. COLLECTOR 2. EMITTER 3. BASE 4. EMITTER
MRF581 MRF581G MRF581A MRF581AG
G RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS *G Denotes RoHS Compliant, Pb free Terminal Finish Features Low Noise - 2.5 db @ 500 MHZ Gain at Optimum Noise Figure = 15.5 db @ 500 MHz Ftau - 5.0 GHz
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MRF5943, R1, R2 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features Low Cost SO-8 Plastic Surface Mount Package.
2N3866 / 2N3866A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features Silicon NPN, To39 packaged VHF/UHF Transistor Specified 400 MHz, 28Vdc Characteristics Output Power = 1.0 Watt Minimum Gain = 10 db Efficiency = 45%
2N4427 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS. Features Silicon NPN, To-39 packaged VHF/UHF Transistor
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features Silicon NPN, To39 packaged VHF/UHF Transistor 1 Watt Minimum Power Output @ 175 MHz 500 MHz CurrentGain Bandwidth Product @ 50mA Power Gain, G PE
PD Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 25 C/W. Characteristic Symbol Min Typ Max Unit.
SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF Line Designed primarily for wideband large signal predriver stages in the UHF frequency range. Specified @.5 V, 7 MHz Characteristics @ Pout
PD Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 25 C/W. Characteristic Symbol Min Typ Max Unit.
SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF Line Designed primarily for wideband large signal predriver stages in the MHz frequency range. Specified @.5 V, 7 MHz Characteristics Output
PD Storage Temperature Range Tstg 65 to +150 C. Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 4.
SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF Line... designed for 12.5 Volt UHF large signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. Specified
PD Operating Junction and Storage Temperature Range TJ, Tstg 65 to +150 C
SEMICONDUCTOR TECHNICAL DATA Order this document by MRF4427/D The RF Line Designed for amplifier, frequency multiplier, or oscillator applications in industrial equipment constructed with surface mount
PD Storage Temperature Range Tstg 65 to +150 C Operating Junction Temperature TJ 200 C
SEMICONDUCTOR TECHNICAL DATA Order this document by MRF26/D The RF Sub Micron Bipolar Line The MRF26 and MRF26S are designed for broadband commercial and industrial applications at frequencies from 1 to
PD Characteristic Symbol Max Unit Thermal Resistance, Junction to Case (2) RθJC 1.75 C/W. Characteristic Symbol Min Typ Max Unit
SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF Line... designed for 13.6 volt VHF large signal class C and class AB linear power amplifier applications in commercial and industrial equipment.
PD Storage Temperature Range Tstg 65 to +150 C Operating Junction Temperature TJ 200 C
SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF Line Designed for 12.5 Volt UHF large signal amplifier applications in industrial and commercial FM equipment operating to 5 MHz. Guaranteed
UHF POWER TRANSISTOR
NPN SiGe RF TRANSISTOR The is a low cost, NPN medium power SiGe HBT(Hetero-Junction Bipolar Transistor) encapsulated in a plastic SOT-3 SMD package. The can be used as a driver device or an output device,
ELECTRICAL CHARACTERISTICS continued (T C = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Emitter Base Break
SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF Sub Micron Bipolar Line Designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain and
techniques, and gold metalization in the fabrication of this device.
Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip Technical Data AT-42 Features High Output Power: 21. dbm Typical P 1 db at 2. GHz 2.5 dbm Typical P 1 db at 4. GHz High Gain at 1 db Compression:
Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip. Technical Data AT-41400
Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip Technical Data AT-1 Features Low Noise Figure: 1.6 db Typical at 3. db Typical at. GHz High Associated Gain: 1.5 db Typical at 1.5 db Typical at. GHz
DISCRETE SEMICONDUCTORS DATA SHEET. BFT92 PNP 5 GHz wideband transistor. Product specification File under Discrete Semiconductors, SC14
DISCRETE SEMICONDUCTORS DATA SHEET File under Discrete Semiconductors, SC14 November 1992 DESCRIPTION PINNING PNP transistor in a plastic SOT23 envelope. It is primarily intended for use in RF wideband
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TO-92 SOT-23 Mark: 3B. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
PN98 Discrete POWER & Signal Technologies MMBT98 C C B E TO-92 SOT-23 Mark: 3B B E This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the.0 ma to 30
DISCRETE SEMICONDUCTORS DATA SHEET. BFG97 NPN 5 GHz wideband transistor. Product specification File under Discrete Semiconductors, SC14
DISCRETE SEMICONDUCTORS DATA SHEET File under Discrete Semiconductors, SC14 September 1995 DESCRIPTION NPN planar epitaxial transistor mounted in a plastic SOT223 envelope. It features excellent output
P D Storage Temperature Range T stg 65 to +150 C. Characteristic Symbol Max Unit Thermal Resistance, Junction to Case R θjc 1.
SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF Line Designed for 24 Volt UHF large signal, common emitter, class AB linear amplifier applications in industrial and commercial FM/AM equipment
ELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown
SEMICONDUCTOR TECHNICAL DATA Order this document by MRF20060R/D The RF Sub Micron Bipolar Line The MRF20060R and MRF20060RS are designed for class AB broadband commercial and industrial applications at
DISCRETE SEMICONDUCTORS DATA SHEET. BLT70 UHF power transistor. Product specification 1996 Feb 06
DISCRETE SEMICONDUCTORS DATA SHEET 1996 Feb 6 FEATURES Very high efficiency Low supply voltage. APPLICATIONS 4 Hand-held radio equipment in common emitter class-ab operation in the 9 MHz communication
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SEMICONDUCTOR TECHNICAL DATA Order this document by /D NPN Silicon COLLECTOR 2 BASE EMITTER MAXIMUM RATINGS Rating Symbol 546 547 548 Unit Collector Emitter oltage CEO 65 45 dc Collector Base oltage CBO
SS8050. V CE =1V, I C =5mA V CE =1V, I C =100mA. 9.0 pf f=1mhz f T Current Gain Bandwidth Product V CE =10V, I C =50mA MHz
SS8050 SS8050 2W Output Amplifier of Portable Radios in Class B Push-pull Operation. Complimentary to Collector Current: I C =.5A Collector Power Dissipation: P C =2W (T C =25 C). Emitter 2. Base 3. Collector
SD1731 (TH562) RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS. OPTIMIZED FOR SSB 30 MHz 50 VOLTS EFFICIENCY 40% COMMON EMITTER
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS OPTIMIZED FOR SSB 30 MHz 50 VOLTS. EFFICIENCY 40% COMMON EMITTER. GOLD METALLIZATION POUT = 220 W PEP WITH 13 db GAIN.500 4LFL (M174) epoxy sealed ORDER CODE
1.0. Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 1.0 C/W. Characteristic Symbol Min Typ Max Unit.
SEMICONDUCTOR TECHNICAL DATA Order this document by MRF455/D The RF Line... designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30 MHz. Specified 12.5 Volt,
MMBT5087L. Low Noise Transistor. PNP Silicon
Low Noise Transistor PNP Silicon Features NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ1 Qualified and PPAP Capable These Devices are PbFree,
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P D Storage Temperature Range T stg 65 to +150 C Operating Junction Temperature T J 200 C
SEMICONDUCTOR TECHNICAL DATA Order this document by MRF151/D The RF MOSFET Line N Channel Enhancement Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz.
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CYStech Electronics Corp.
Page No. : 1/7 PNP Epitaxial Planar Transistor BVCEO -V IC -1A RCE(SAT) 32mΩ(typ.) Features Low VCE(SAT), VCE(SAT)= -.16V (Typ.) @ IC/IB=-5mA/-5mA High breakdown voltage, BVCEO=-V Complementary to BTD1782N3
Data Sheet. AT Up to 6 GHz Medium Power Silicon Bipolar Transistor. Description. Features. 85 Plastic Package
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PD Characteristic Symbol Max Unit Thermal Resistance, Junction to Case (1) at 70 C Case RθJC 7.0 C/W. Characteristic Symbol Min Typ Max Unit
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COLLECTOR BASE EMITTER BC 557 BC556. mw mw/ C PD PD Characteristic Symbol Min Typ Max Unit V(BR)CEO BC557 BC558 V(BR)CBO BC557 BC558
SEMICONDUCTOR TECHNICAL DATA Order this document by /D PNP Silicon COLLECTOR 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol BC 556 BC 557 BC 558 Unit Collector Emitter oltage CEO 65 45 3 dc Collector Base
MMBT3906. PNP General Purpose Amplifier
Features Collector current capability IC = -200 ma Collector-emitter voltage VCEO = -40 V RoHS compliant package Application General switching and amplification Mechanical Data Case outline: SOT-23 Packing
Watts W/ C Storage Temperature Range T stg 65 to +150 C Operating Junction Temperature T J 200 C
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Electronics II (02 SE048) Lab Experiment 1 (option A): BJT Differential Amplifiers
Departamento de Electrónica, Sistemas e Informática Ingeniería Electrónica Electronics II (02 SE048) Lab Experiment 1 (option A): BJT Differential Amplifiers Objectives The general objective of this experiment
HMC599ST89 / 599ST89E. Features. The HMC599ST89(E) is ideal for: = +25 C MHz. Gain Variation Over Temperature MHz 0.
HMCST / STE Typical Applications v2.3 GaAs phemt MMIC LNA, Ohm - 1 MHz Features The HMCST(E) is ideal for: High P1 Output Power: +1 m VHF / UHF Antennas HDTV Receivers CMTS Equipment CATV, Cable Modem
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Data Sheet FEATURES Very low voltage noise: nv/ Hz maximum at 00 Hz Excellent current gain match: 0.5% typical Low offset voltage (VOS): 200 μv maximum Outstanding offset voltage drift: 0.03 μv/ C typical
2N2219A 2N2222A HIGH SPEED SWITCHES
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RF POWER BIPOLAR TRANSISTORS VHF MOBILE APPLICATIONS FEATURES SUMMARY 1 MHz 13.6 VOLTS COMMON EMITTER P OUT = W MIN. WITH 9 db GAIN Figure 1. Package DESCRIPTION The SD1275 is a 13.6 V Class C epitaxial
TIP120, TIP121, TIP122,
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HCPL-8 Phototransistor Optocoupler SMD Mini-Flat Type Data Sheet Lead (Pb) Free RoHS 6 fully compliant RoHS 6 fully compliant options available; -xxxe denotes a lead-free product Description The HCPL-8
2SC5784 2SC5784. High-Speed Switching Applications DC-DC Converter Applications. Maximum Ratings (Ta = 25 C) Electrical Characteristics (Ta = 25 C)
TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5784 High-Speed Switching Applications DC-DC Converter Applications Industrial Applications Unit: mm High DC current gain: hfe = 4 to (IC =.5 A) Low collector-emitter
Four Transistors Equal Power Each. Watts mw/ C Watts mw/ C TJ, Tstg 55 to +150 C. Characteristic Symbol Min Max Unit
PNP/NPN Silicon Voltage and current are negative for PNP transistors MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage VCEO 40 Vdc Collector Base Voltage VCB 40 Vdc Emitter Base Voltage
DATA SHEET P D * mw C/W. Packing. Packing SOT-23 SOT /Reel 3000/Reel SOT-23 SOT /Reel 3000/Reel SOT-23.
DATA SHEET SEMICONDUCTOR NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor
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NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT
CA3102. Dual High Frequency Differential Amplifier For Low Power Applications Up to 500MHz. Features. Applications. Ordering Information.
CA Data Sheet November 999 File Number 6.6 Dual High Frequency Differential Amplifier For Low Power Applications Up to MHz The CA consists of two independent differential amplifiers with associated constant
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SEMICONDUCTOR TECHNICAL DATA DTC ~ 8 DTC ~ / /7 DTC / Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed
50 Vdc Collector-Base Voltage VCEO. 50 Vdc Collector Current-Continuous VCBO. THERMAL CHARACTERISTICS Characteristics Symbol Value Unit
MMUN Series Bias Resistor Transistor NPN Silicon P b Lead(Pb)Free BASE COLLECTOR R R EMITTER SOT MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage VCEO 5 Vdc CollectorBase Voltage VCBO
HMC639ST89 / 639ST89E
v3.1 HMC63ST / 63STE AMPLIFIER,.2-4. GHz Typical Applications The HMC63ST(E) is ideal for: Cellular / PCS / 3G WiMAX, WiBro, & Fixed Wireless CATV & Cable Modem Microwave Radio IF and RF Sections Features
Watts W/ C Storage Temperature Range Tstg 65 to +150 C Operating Junction Temperature TJ 200 C
SEMICONDUCTOR TECHNICAL DATA Order this document by MRF184/D The RF MOSFET Line N Channel Enhancement Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies to