DISCRETE SEMICONDUCTORS DATA SHEET. BFG97 NPN 5 GHz wideband transistor. Product specification File under Discrete Semiconductors, SC14
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1 DISCRETE SEMICONDUCTORS DATA SHEET File under Discrete Semiconductors, SC14 September 1995
2 DESCRIPTION NPN planar epitaxial transistor mounted in a plastic SOT223 envelope. It features excellent output voltage capabilities, and is primarily intended for use in MATV applications. PNP complement is the BFG31. PINNING PIN DESCRIPTION 1 emitter 2 base 3 emitter 4 collector ge Top view MSB2-1 Fig.1 SOT223. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V CBO collector-base voltage open emitter 2 V V CEO collector-emitter voltage open base 15 V I C DC collector current 1 ma P tot total power dissipation up to T s = 125 C (note 1) 1 W h FE DC current gain I C = 7 ma; V CE = 1 V; T j =25 C 25 8 f T transition frequency I C = 7 ma; V CE = 1 V; 5.5 GHz f = 5 MHz; T amb =25 C G UM maximum unilateral power gain I C = 7 ma; V CE = 1 V; 16 db f = 5 MHz; T amb =25 C I C = 7 ma; V CE = 1 V; 12 db f = 8 MHz; T amb =25 C V o output voltage I C = 7 ma; V CE = 1 V; d im = 6 db; R L =75Ω; f (p+q r) = MHz; T amb =25 C 7 mv LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V CBO collector-base voltage open emitter 2 V V CEO collector-emitter voltage open base 15 V V EBO emitter-base voltage open collector 3 V I C DC collector current 1 ma P tot total power dissipation up to T s = 125 C (note 1) 1 W T stg storage temperature C T j junction temperature 175 C Note 1. T s is the temperature at the soldering point of the collector tab. September
3 THERMAL RESISTANCE SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE thermal resistance from junction to up to T s = 125 C (note 1) 5 K/W soldering point R th j-s Note 1. T s is the temperature at the soldering point of the collector tab. CHARACTERISTICS T j =25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I CBO collector cut-off current I E = ; V CB = 1 V 1 na h FE DC current gain I C = 7 ma; V CE = 1 V 25 8 f T transition frequency I C = 7 ma; V CE = 1 V; 5.5 GHz f = 5 MHz; T amb =25 C C c collector capacitance I E =i e = ; V CB = 1 V; f = 1 MHz 1.5 pf C e emitter capacitance I C =i c = ; V EB =.5 V; f = 1 MHz 6.5 pf C re feedback capacitance I C = ; V CE = 1 V; f = 1 MHz 1 pf G UM maximum unilateral power gain (note 1) I C = 7 ma; V CE = 1 V; f = 5 MHz; T amb =25 C I C = 7 ma; V CE = 1 V; f = 8 MHz; T amb =25 C Notes 1. G UM is the maximum unilateral power gain, assuming S 12 is zero and 2. d im = 6 db (DIN 454B); I C = 7 ma; V CE = 1 V; R L =75Ω; T amb =25 C V p =V o at d im = 6 db; V q =V o 6 db; f p = MHz; V r =V o 6 db; f q = MHz; f r = MHz; measured at f (p+q r) = MHz. 3. d im = 6 db (DIN 454B); I C = 7 ma; V CE = 1 V; R L =75Ω; T amb =25 C V p =V o at d im = 6 db; V q =V o 6 db; f p = MHz; V r =V o 6 db; f q = MHz; f r = MHz; measured at f (p+q r) = MHz. 4. I C = 7 ma; V CE = 1 V; R L =75Ω; T amb =25 C; V p =V q =V o = 5 dbmv; f (p+q) = 45 MHz; f p = 5 MHz; f q = 4 MHz. 5. I C = 7 ma; V CE = 1 V; R L =75Ω; T amb =25 C; V p =V q =V o = 5 dbmv; f (p+q) = 81 MHz; f p = 25 MHz; f q = 56 MHz. 16 db 12 db V o output voltage note 2 75 mv note 3 7 mv d 2 second order intermodulation note 4 56 db distortion note 5 53 db G UM S 21 2 = 1 log db. 1 S 11 1 S 22 September
4 V BB input 75 Ω C3 C1 L1 R1 L3 R2 L2 C4 L5 DUT L4 L6 C7 C8 V CC output 75 Ω C2 C5 R3 R4 C6 MBB87 Fig.2 Intermodulation distortion and second order intermodulation distortion test circuit. List of components (see test circuit) DESIGNATION DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C2, C3, C7, C8 multilayer ceramic 1 nf capacitor C1, C4, C6 multilayer ceramic 1.2 pf capacitor C5 (note 1) miniature ceramic plate 1 nf capacitor L1 (note 1).5 turns.4 mm copper int. dia. 3 mm wire L2 microstripline 75 Ω length 14 mm; width 2.5 mm L3 microstripline 75 Ω length 8 mm; width 2.5 mm L4, L5 (note 1) 1.5 turns.4 mm copper wire Notes int. dia. 3 mm; winding pitch 1 mm L6 microstripline 75 Ω length 19 mm; width 2.5 mm L7 Ferroxcube choke 5 µh R1 metal film resistor 1 kω R2 (note 1) metal film resistor 22 Ω R3, R4 metal film resistor 3 Ω The circuit has been built on a double copper-clad printed circuit board with PTFE dielectric (ε r = 2.2); thickness 1 16 inch; thickness of copper sheet 2 35 µm. 1. Components C5, L1, L4, L5, and R2 are mounted on the underside of the PCB. September
5 V BB V CC C3 C7 R1 R3 L7 75 Ω input C2 L1 L2 L3 L5 L6 C8 75 Ω output C1 C4 R2 R4 L4 C5 C6 MEA971 8 mm 6 mm MEA969 8 mm 6 mm mounting screws M 2.5 (8x) MEA97 Fig.3 Intermodulation distortion and second order intermodulation distortion printed circuit board. September
6 1.2 Ptot (W) 1. MBB h FE MBB T ( o s C) I C (ma) V CE = 1 V; T j =25 C. Fig.4 Power derating curve. Fig.5 DC current gain as a function of collector current. 3 Cre (pf) MBB798 8 f T (GHz) 6 MBB V CE (V) I C (ma) 12 I E = ; f = 1 MHz; T j =25 C. V CE = 1 V; f = 5 MHz; T j =25 C. Fig.6 Feedback capacitance as a function of collector-emitter voltage. Fig.7 Transition frequency as a function of collector current. September
7 45 d im (db) 5 MBB d im (db) 5 MBB I C (ma) I C (ma) V CE = 1 V; V o = 75 mv; f (p+q r) = MHz; T amb =25 C. V CE = 1 V; V o = 7 mv; f (p+q r) = MHz; T amb =25 C. Fig.8 Intermodulation distortion as a function of collector current. Fig.9 Intermodulation distortion as a function of collector current. 45 d2 (db) 5 MBB8 45 d2 (db) 5 MBB I C (ma) V CE = 1 V; V o = 5 dbmv; f (p+q) = 45 MHz; T amb =25 C I C (ma) V CE = 1 V; V o = 5 dbmv; f (p+q) = 81 MHz; T amb =25 C. Fig.1 Second order intermodulation distortion as a function of collector current. Fig.11 Second order intermodulation distortion as a function of collector current. September
8 6 handbook, Z halfpage L (Ω) 5 4 R L MEA963 6 handbook, Z halfpage L (Ω) 5 4 R L MEA X L P (W) OUT X L P (W) OUT V CE = 6 V; f = 9 MHz. V CE = 7.5 V; f = 9 MHz. Fig.12 Load impedance as a function of output power. Fig.13 Load impedance as a function of output power. 6 handbook, Z halfpage L (Ω) 5 MEA965 R L X L P OUT (W) V CE = 1 V; f = 9 MHz. Fig.14 Load impedance as a function of output power. September
9 2 Z i (Ω) 15 MEA957 2 Z i (Ω) 15 MEA958 1 x i r i 1 r i x i P (W) OUT P (W) OUT V CE = 6 V; f = 9 MHz. V CE = 7.5 V; f = 9 MHz. Fig.15 Input impedance as a function of output power. Fig.16 Input impedance as a function of output power. 2 Z i (Ω) 15 MEA959 1 r i 5 x i P OUT (W) V CE = 1 V; f = 9 MHz. Fig.17 Input impedance as a function of output power. September
10 8 η (%) 7 MEA P OUT (W) 1 MEA962 V = CE 1 V 6 V = CE 6 V 7.5 V 6 V V 1 V P (W) 1.5 OUT P IN (mw) f = 9 MHz. f = 9 MHz. Fig.18 Efficiency as a function of output power. Fig.19 Output power as a function of input power. 1 G p (db) 8 MEA96 5 G UM (db) 4 MBB82 6 V = CE 1 V V 7.5 V P 1.5 OUT (W) f (MHz) f = 9 MHz. Fig.2 Power gain as a function of output power. I C = 7 ma; V CE = 1 V; T amb =25 C. Fig.21 Maximum unilateral power gain as a function of frequency. September
11 MHz j j GHz MBB83 5 I C = 7 ma; V CE = 1 V; T amb =25 C. Z o =5Ω. Fig.22 Common emitter input reflection coefficient (S 11 ). 9 o 12 o 6 o 15 o 2 GHz 3 o 18o MHz o ϕ ϕ 15 o 3 o 12 o 9 o 6 o MBB86 I C = 7 ma; V CE = 1 V; T amb =25 C. Fig.23 Common emitter forward transmission coefficient (S 21 ). September
12 12 o 9 o 6 o 15 o 2 GHz 3 o 18o MHz o ϕ ϕ 15 o 3 o 12 o 9 o 6 o MBB85 I C = 7 ma; V CE = 1 V; T amb =25 C. Fig.24 Common emitter reverse transmission coefficient (S 12 ) j j 2 GHz MHz I C = 7 ma; V CE = 1 V; T amb =25 C. Z o =5Ω. 5 MBB84 Fig.25 Common emitter output reflection coefficient (S 22 ). September
13 PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 4 leads SOT223 D B E A X c y H E v M A b 1 4 Q A A L p e 1 b p w M B detail X e 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A 1 b p b 1 c D E e e 1 H E L p Q v w y mm OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE SOT September
14 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September
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DISCRETE SEMICONDUCTORS DATA SHEET M3D176 Supersedes data of April 1992 1996 Mar 21 FEATURES Low-voltage stabilization Forward voltage range: 1.4 to 3.2 V Total power dissipation:. 330 mw Differential
More informationDATA SHEET. BCW31; BCW32; BCW33 NPN general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2000 Jul 04
DISCRETE SEMICONDUCTORS DT SHEET Supersedes data of 2000 Jul 04 2004 Feb 06 FETURES Low current (100 m) Low voltage (32 V). PPLICTIONS General purpose switching and amplification. PINNING PIN 1 base 2
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Rev. 8 25 February 28 Product data sheet. Product profile. General description PNP medium power transistor series. Table. Product overview Type number [] Package NPN complement NXP JEITA JEDEC BCP52 SOT223
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Important notice Dear Customer, On 7 February 217 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
More informationINTEGRATED CIRCUITS DATA SHEET. TBA120U Sound I.F. amplifier/demodulator for TV. Product specification File under Integrated Circuits, IC02
INTEGRATED CIRCUITS DATA SHEET Sound I.F. amplifier/demodulator for TV File under Integrated Circuits, IC02 March 1986 GENERAL DESCRIPTION The is an i.f. amplifier with a symmetrical FM demodulator and
More informationIMPORTANT NOTICE. use
Rev. 03 18 July 2008 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets
More informationPEMH17; PUMH17. NPN/NPN resistor-equipped transistors; R1 = 47 kω, R2 = 22 kω. NPN/NPN Resistor-Equipped Transistors (RET).
NPN/NPN resistor-equipped transistors; R = 47 kω, R2 = 22 kω Rev. 02 3 May 2005 Product data sheet. Product profile. General description NPN/NPN Resistor-Equipped Transistors (RET). Table : Product overview
More informationPEMB18; PUMB18. PNP/PNP resistor-equipped transistors; R1 = 4.7 kω, R2 = 10 kω. Type number Package NPN/PNP NPN/NPN complement complement
PNP/PNP resistor-equipped transistors; R1 = 4.7 kω, R2 = 10 kω Rev. 03 8 July 2005 Product data sheet 1. Product profile 1.1 General description PNP/PNP resistor-equipped transistors. Table 1: Product
More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
More informationDISCRETE SEMICONDUCTORS DATA SHEET M3D058. BLF346 VHF power MOS transistor. Product specification Supersedes data of 1996 Oct 02.
DISCRETE SEMICONDUCTORS DATA SHEET M3D58 Supersedes data of 1996 Oct 2 23 Sep 26 FEATURES High power gain Easy power control Good thermal stability Gold metallization ensures excellent reliability. APPLICATIONS
More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 207 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
More informationBSN274; BSN274A N-channel enhancement mode vertical D-MOS transistor
DISCRETE SEMICONDUCTORS N-channel enhancement mode vertical File under Discrete Semiconductors, SC13b April 1995 FEATURES Direct interface to C-MOS, TTL, etc., due to low threshold voltage High speed switching
More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
More informationDATA SHEET. BAV23 General purpose double diode DISCRETE SEMICONDUCTORS Sep 17. Product specification Supersedes data of April 1996
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D7 Supersedes data of April 996 996 Sep 7 FEATURES Small plastic SMD package Switching speed:. 5 ns General application Continuous reverse voltage:.
More informationDISCRETE SEMICONDUCTORS DATA SHEET. PMBT2369 NPN switching transistor. Product specification Supersedes data of 1999 Apr 27.
DISCRETE SEMICONDUCTORS DT SHEET Supersedes data of 1999 pr 27 2004 Jan 22 FETURES Low current (max. 200 m) Low voltage (max. 15 V). PPLICTIONS High-speed switching, especially in portable equipment. PINNING
More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 217 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
More information65 V, 100 ma NPN/NPN general-purpose transistor. Type number Package PNP/PNP NPN/PNP complement complement
Rev. 01 24 August 2009 Product data sheet 1. Product profile 1.1 General description NPN/NPN general-purpose transistor pair in a very small Surface-Mounted Device (SMD) plastic package. Table 1. Product
More informationNPN 7 GHz wideband transistor IMPORTANT NOTICE. use
Rev. 4 October 7 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 6 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together
More informationDISCRETE SEMICONDUCTORS DATA SHEET. BFS17W NPN 1 GHz wideband transistor. Product specification Supersedes data of November 1992.
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of November 1992 1995 Sep 4 APPLICATIONS Primarily intended as a mixer, oscillator and IF amplifier in UHF and VHF tuners. DESCRIPTION Silicon NPN transistor
More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 27 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and
More informationBC846/BC546 series. 65 V, 100 ma NPN general-purpose transistors. Type number [1] Package PNP Philips JEITA JEDEC
65 V, 00 ma NPN general-purpose transistors Rev. 06 7 February 006 Product data sheet. Product profile. General description NPN general-purpose transistors in Surface Mounted Device (SMD) plastic packages.
More informationBFG10; BFG10/X. NPN 2 GHz RF power transistor IMPORTANT NOTICE. use
Rev. 5 22 November 27 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 26 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets
More informationNPN 5 GHz wideband transistor. The transistor is encapsulated in a 3-pin plastic SOT23 envelope.
SOT3 BFTA Rev. September Product data sheet. Product profile. General description The BFTA is a silicon NPN transistor, primarily intended for use in RF low power amplifiers, such as pocket telephones
More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 27 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and
More information100 V, 4.1 A PNP low VCEsat (BISS) transistor
Rev. 3 26 July 2 Product data sheet. Product profile. General description PNP low V CEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.
More informationNPN 9 GHz wideband transistor. The transistor is encapsulated in a plastic SOT23 envelope.
SOT23 Rev. 4 7 September 211 Product data sheet 1. Product profile 1.1 General description The is an NPN silicon planar epitaxial transistor, intended for applications in the RF front end in wideband applications
More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 207 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
More informationBC635; BCP54; BCX V, 1 A NPN medium power transistors
45 V, A NPN medium power transistors Rev. 7 4 June 7 Product data sheet. Product profile. General description NPN medium power transistor series. Table. Product overview Type number [] Package PNP complement
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DISCRETE SEMICONDUCTORS DT SHEET Supersedes data of 1999 pr 12 2004 Jan 13 FETURES Low current (max. 25 m) Low voltage (max. 40 V). PPLICTIONS M mixers IF amplifiers in M/FM receivers. PINNING PIN 1 base
More informationDISCRETE SEMICONDUCTORS DATA SHEET M3D088. PBSS5120T 20 V, 1 A PNP low V CEsat (BISS) transistor. Product specification 2003 Sep 29
DISCRETE SEMICONDUCTORS DT SHEET M3D088 2003 Sep 29 FETURES Low collector-emitter saturation voltage V CEsat High collector current capability I C and I CM High efficiency leading to less heat generation
More informationDATA SHEET. PMBT5401 PNP high-voltage transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr 15.
DISCRETE SEMICONDUCTORS DT SHEET k, halfpage M3D088 Supersedes data of 1999 pr 15 2004 Jan 21 FETURES Low current (max. 300 m) High voltage (max. 150 V). PPLICTIONS Switching and amplification in high
More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 207 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
More informationNPN/PNP double low V CEsat Breakthrough In Small Signal (BISS) transistor in a medium power Surface-Mounted Device (SMD) plastic package.
Rev. 5 April 27 Product data sheet. Product profile. General description NPN/PNP double low V CEsat Breakthrough In Small Signal (BISS) transistor in a medium power Surface-Mounted Device (SMD) plastic
More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
More informationDATA SHEET. PBSS4240T 40 V; 2 A NPN low V CEsat (BISS) transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Jul 13
DISCRETE SEMICONDUCTORS DT SHEET PBSS4240T 40 V; 2 NPN low V CEsat (BISS) transistor Supersedes data of 2001 Jul 13 2004 Jan 09 FETURES Low collector-emitter saturation voltage High current capability
More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 207 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
More informationDATA SHEET. PEMD12; PUMD12 NPN/PNP resistor-equipped transistors; R1 = 47 kω,r2=47kω DISCRETE SEMICONDUCTORS
DISCRETE SEMICONDUCTORS DT SHEET NPN/PNP resistor-equipped transistors; R1 = 47 kω,r2=47kω Supersedes data of 2001 Nov 7 2003 Oct 08 FETURES Built-in bias resistors Simplified circuit design Reduction
More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
More informationDATA SHEET. PIMH9; PUMH9; PEMH9 NPN/NPN resistor-equipped transistors; R1 = 10 kω,r2=47kω DISCRETE SEMICONDUCTORS
DISCRETE SEMICONDUCTORS DT SHEET NPN/NPN resistor-equipped transistors; R1 = 10 kω,r2=47kω Supersedes data of 2003 Sep 15 2004 pr 14 FETURES Built-in bias resistors Simplifies circuit design Reduces component
More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
More informationDATA SHEET. PEMD2; PIMD2; PUMD2 NPN/PNP resistor-equipped transistors; R1 = 22 kω,r2=22kω DISCRETE SEMICONDUCTORS
DISCRETE SEMICONDUCTORS DT SHEET NPN/PNP resistor-equipped transistors; R1 = 22 kω,r2=22kω Supersedes data of 2003 Jun 06 2004 pr 21 FETURES Built-in bias resistors Simplifies circuit design Reduces component
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