NPN/PNP Silicon Complementary Small Signal Dual Transistor Qualified per MIL-PRF-19500/421

Transcription

1 Available on commercial versions NPN/PNP Silicon Complementary Small Signal Dual Transistor Qualified per MIL-PRF-19500/421 DESCRIPTION Qualified Levels: JAN, JANTX, and JANTXV This 2N4854 device in a 6-pin TO-78 package is military qualified up to a JANTXV level for high-reliability applications. Microsemi also offers numerous other products to meet higher and lower power voltage regulation applications. Important: For the latest information, visit our website FEATURES JEDEC registered 2N4854. JAN, JANTX, and JANTXV qualifications also available per MIL-PRF-19500/421. RoHS compliant versions available (commercial grade only). TO-78 Package Compact package design. Lightweight. APPLICATIONS / BENEFITS Also available in: 6-Pin U package 2N4854U 6-Pin Flatpack package 2N3838 MAXIMUM RATINGS Parameters/Test Conditions Symbol Value per Unit Each Transistor Total Package Thermal Resistance Junction-to-Case R ӨJC ºC/W Thermal Resistance Junction-to-Ambient R ӨJA ºC/W Total Power T A = +25 ºC (1) P T W Total Power T C = +25 ºC (2) P T W Junction and Storage Temperature T J and -65 to +200 ºC T STG Collector-Base Voltage, Emitter Open V CBO 60 V Emitter-Base Voltage, Collector Open V EBO 5 V Collector-Emitter Voltage, Base Open V CEO 40 V Collector Current, dc I C 600 ma Lead to Case Voltage +/- 120 V Solder 10 s T SP 260 o C Notes: 1. For T A > +25 C, derate linearly 1.71 mw/ C one transistor, 3.43 mw/ C both transistors. 2. For T C > +25 C, derate linearly 5.71 mw/ C one transistor, mw/ C both transistors. MSC Lawrence 6 Lake Street, Lawrence, MA Tel: or (978) Fax: (978) MSC Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) Fax: +353 (0) Website: T4-LDS-0275, Rev. 1 (121178) 2012 Microsemi Corporation Page 1 of 5

2 CASE: Au over Ni plated kovar, pure nickel cap. TERMINALS: Au over Ni plated kovar. MARKING: Manufacturer s ID, part number, date code. POLARITY: See case outline. WEIGHT: grams. See Package Dimensions on last page. MECHANICAL and PACKAGING PART NOMENCLATURE JAN 2N4854 (e3) Reliability Level JAN = JAN level JANTX = JANTX level JANTXV = JANTXV level Blank = Commercial RoHS Compliance e3 = RoHS compliant (available on commercial grade only) Blank = non-rohs compliant JEDEC type number (See Electrical Characteristics table) Symbol I B I C I E I O V CB V CE V EB SYMBOLS & DEFINITIONS Definition Base Current, dc. Collector Current, dc. Emitter Current, dc. Average Rectified Output Current: The Output Current averaged over a full cycle with a 50 Hz or 60 Hz sine-wave input and a 180 degree conduction angle. Collector-Base Voltage (dc). Collector-Emitter Voltage, dc. Emitter-Base Voltage (dc). T4-LDS-0275, Rev. 1 (121178) 2012 Microsemi Corporation Page 2 of 5

3 ELECTRICAL T A = 25 ºC unless otherwise noted. Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Current I C = 10 ma (pulsed) V (BR)CEO 40 V Collector-Base Cutoff Current V CB = 60 V I CBO(1) 10 µa Collector-Base Cutoff Current V CB = 50 V I CBO(2) 10 na Emitter-Base Cutoff Current V EB = 5.0 V V EB = 3.0 V ON CHARACTERISTICS Forward-Current Transfer Ratio I C = 150 ma, V CE = 1 V I C = 100 µa, V CE = 10 V I C = 1.0 ma, V CE = 10 V I C = 10 ma, V CE = 10 V I C = 150 ma, V CE = 10 V I C = 300 ma, V CE = 10 V Collector-Emitter Saturation Voltage I C = 150 ma, I B = 15 ma Base-Emitter Saturation Voltage I C = 150 ma, I B = 15 ma DYNAMIC CHARACTERISTICS Forward Current Transfer Ratio Forward Current Transfer Ratio, Magnitude I C = 20 ma, V CE = 10 V, f = 100 MHz Small-Signal Common Emitter Input Impedance Small-Signal Common Emitter Output Admittance Open Circuit Output Capacitance V CB = 10 V, I E = 0, 100 khz f 1.0 MHz Noise Figure I C = 100 µa, V CE = 10 V, f = 1.0 khz, R G =1.0 kω SWITCHING CHARACTERISTICS Turn-On Time (Saturated) (Reference MIL-PRF-19500/421, figure 7) Turn-Off Time (Saturated) (Reference MIL-PRF-19500/421, figure 8) Pulse Response (Non-Saturated) (Reference MIL-PRF-19500/421, figure 9) I EBO(1) I EBO(2) h FE µa na V CE(sat) 0.40 V V BE(sat) V hfe hfe hie kω hoe 50 µhmo Cobo 8.0 pf NF 8.0 db t on 45 ns t off 300 ns t on + t off 18 ns Collector-Emitter Non-Latching Voltage V CEO 40 V T4-LDS-0275, Rev. 1 (121178) 2012 Microsemi Corporation Page 3 of 5

4 GRAPHS Theta ( o C/W) Time (s) FIGURE 3 Thermal impedance graph (R ØJA ) T4-LDS-0275, Rev. 1 (121178) 2012 Microsemi Corporation Page 4 of 5

5 PACKAGE DIMENSIONS Dimensions Ltr Inch Millimeters Notes Min Max Min Max CD CH HD HT LD ,7 LL Ltr Dimensions Notes Inch Millimeters Min Max Min Max LS Nom Nom. 5 LS Nom Nom 5 LU , 7 TL TW NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Measured in the zone beyond.250 inch (6.35 mm) from the seating plane. 4. Measured in the zone.050 inch (1.27 mm) and.250 inch (6.35 mm) from the seating plane. 5. When measured in a gauging plane , inch ( , mm) below the seating plane of the transistor, maximum diameter leads shall be within.007 inch (0.18 mm) of their true location relative to a maximum width tab. Smaller diameter leads shall fall within the outline of the maximum diameter lead tolerance. 6. Measured from the maximum diameter of the actual device. 7. All six leads. 8. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology. T4-LDS-0275, Rev. 1 (121178) 2012 Microsemi Corporation Page 5 of 5