Voidless-Hermetically-Sealed Unidirectional 150 W Low-Capacitance Transient Voltage Suppressors

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1 N89 N882 Available Voidless-Hermetically-Sealed Unidirectional 50 W Low-Capacitance Transient Suppressors DESCRIPTION This series of voidless-hermetically-sealed unidirectional low-capacitance Transient Suppressor (TVS) designs are ideal for protecting higher frequency applications in high-reliability applications where a failure cannot be tolerated. They include a unique rectifier diode in series and opposite direction from the TVS to achieve a very low capacitance of pf. This product series provides a working peak standoff voltage selection from 6.8 to 70 volts with 50 watt ratings. They are very robust in hardglass construction and also use an internal metallurgical bond identified as Category for high reliability applications. These devices are also available in axial leaded packages for thru-hole mounting. Important: For the latest information, visit our website FEATURES High surge current and peak pulse power unidirectional protection for sensitive circuits. Very low capacitance for high frequency or high baud rate applications. Bidirectional capability with two devices in anti-parallel (see Figure 5). Triple-layer passivation. Internal Category metallurgical bonds. Voidless hermetically sealed glass package. RoHS compliant versions are available. APPLICATIONS / BENEFITS High reliability transient protection. Extremely robust construction. Working peak standoff voltage (V WM) from 6.8 to 70 volts. Available as 50 W peak pulse power (P PP) at 0/000 µs. Lowest available capacitance for 50 W rated TVS. ESD and EFT protection per IEC and IEC respectively. Secondary lightning protection per select levels in IEC Flexible axial-leaded mounting terminals. Nonsensitive to ESD per MIL-STD-750 method 020. Inherently radiation hard as described in Microsemi MicroNote 050. MAXIMUM RATINGS Parameters/Test Conditions Symbol Value Unit Junction and Storage Temperature T J and T STG -55 to +75 Capacitance at zero volts C pf Thermal Resistance junction to ambient R θja 50 o C/W Peak Pulse Power at 25 o C (0µs/000µs) P PP 50 W Impulse repetition rate (duty factor) d.f 0.0 % Steady State (Average) T A = 25 o C P M(AV).0 W Solder Temperature (0 s maximum) 260 o C Note: Steady-state power ratings with reference to ambient are for PC boards where thermal resistance from mounting point to ambient is sufficiently controlled where T J(MAX) is not exceeded. o C A Package Also available in: A MELF package (surface mount) N89US N882US MSC Lawrence 6 Lake Street, Lawrence, MA (978) Fax: (978) MSC Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) Fax: +353 (0) Website: T-LDS-xxxx, Rev x (0-02-) 203 Microsemi Corporation Page of 6

2 N89 N882 MECHANICAL and PACKAGING CASE: Hermetically sealed voidless hard glass with tungsten slugs. TERMINALS: Axial-leads are tin/lead or RoHS compliant matte/tin plating over copper. MARKING: Body paint and part number POLARITY: Cathode band MOUNTING: Any position TAPE & REEL option: Standard per EIA-296. WEIGHT: Approximately 30 milligrams. See Package Dimensions on last page. PART NOMENCLATURE MQ N89 (e3) Reliability Level Blank = Commercial MQ (reference JAN) MX (reference JANTX) MV (reference JANTXV) MS (reference JANS) RoHS Compliance e3 = RoHS compliant Blank = non-rohs compliant Type number (see Electrical Characteristics table) Symbol V(BR) V (BR) V WM I D I (BR) I PP V C P PP C T V WIB I IB SYMBOLS & DEFINITIONS Definition Temperature Coefficient of Breakdown : The change in breakdown voltage divided by the change in temperature that caused it expressed in %/ C or mv/ C. Breakdown : The voltage across the device at a specified current I (BR) in the breakdown region. Working Standoff : The maximum-rated value of dc or repetitive peak positive cathode-to-anode voltage that may be continuously applied over the standard operating temperature. Standby : The current through the device at rated stand-off voltage. Breakdown : The current used for measuring Breakdown V (BR) Peak Impulse : The maximum rated random recurring peak impulse current or nonrepetitive peak impulse current that may be applied to a device. A random recurring or nonrepetitive transient current is usually due to an external cause, and it is assumed that its effect will have completely disappeared before the next transient arrives. Clamping : The voltage across the device in a region of low differential resistance during the application of an impulse current (I PP) for a specified waveform. Peak Pulse Power. The rated random recurring peak impulse power or rated nonrepetitive peak impulse power. The impulse power is the maximum-rated value of the product of I PP and V C. Total Capacitance: The total small signal capacitance between the diode terminals of a complete device. Inverse Blocking : The maximum-rated value of dc or peak blocking voltage in the inverse direction. Blocking Leakage : The current through the device at the rated inverse blocking voltage (V WIB). T-LDS-xxxx, Rev x (0-02-) 203 Microsemi Corporation Page 2 of 6

3 N89 N882 ELECTRICAL T A = 25 o C unless otherwise noted. Type Number N89 N850 N85 N852 N853 N85 N855 N856 N857 N858 N859 N860 N86 N862 N863 N86 N865 N866 N867 N868 N869 N870 N87 N872 N873 N87 N875 N876 N877 N878 N879 N880 N88 N882 Minimum Breakdown (V (BR)) Breakdown (I (BR)) Working Standoff (V WM) Standby (I D) Peak Clamping (V C) Surge (I PP) V (BR) Temperature Coefficient (α V(BR)) Capacitance (C T) Inverse Blocking (V WIB) V ma V A V A %/ºC pf V A Blocking Leakage (I IB) T-LDS-xxxx, Rev x (0-02-) 203 Microsemi Corporation Page 3 of 6

4 N89 N882 GRAPHS PULSE TIME (tp) ms to 50% decay point in Figure 2 FIGURE PEAK PULSE POWER VS. PULSE TIME IPP Peak Pulse - % IPP PEAK PULSE POWER (PPP) kw t Time ms FIGURE 2 0/000s CURRENT IMPULSE WAVEFORM T-LDS-xxxx, Rev x (0-02-) 203 Microsemi Corporation Page of 6

5 N89 N882 GRAPHS (surge) in percent of 25 o C rating Peak Pulse Power (PPP) or current IPP PULSE CONDITIONS DEFINED IN FIGURES & 2 T A Ambient Temperature o C FIGURE 3 DERATING CURVE SCHEMATIC APPLICATIONS The TVS low capacitance device configuration described in this data sheet is shown in Figure involving a TVS and a unique diode in series and opposite direction. For bidirectional low capacitance TVS applications, use two (2) low capacitance TVS devices as described in this data sheet in anti-parallel as shown in Figure 5. This will result in twice the capacitance of Figure specified in this data sheet. Cathode> FIGURE FIGURE 5 Low Capacitance TVS Bidirectional configuration (2 Low Capacitance TVS devices in anti-parallel) T-LDS-xxxx, Rev x (0-02-) 203 Microsemi Corporation Page 5 of 6

6 N89 N882 PACKAGE DIMENSIONS NOTES:. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Dimension BD shall be measured at the largest diameter.. Dimension LU lead diameter uncontrolled in this area. 5. In accordance with ASME Y.5M, diameters are equivalent to x symbology. Dimensions Ltr Inches Millimeters Notes Min Max Min Max BD BL LD LL LU T-LDS-xxxx, Rev x (0-02-) 203 Microsemi Corporation Page 6 of 6

Voidless Hermetically Sealed Bidirectional Transient Voltage Suppressors Qualified to MIL-PRF-19500/516

Available on commercial versions Voidless Hermetically Sealed Bidirectional Transient Voltage Suppressors Qualified to MIL-PRF-19500/516 DESCRIPTION This series of industry recognized voidless, hermetically