2 kw Surface Mount Transient Voltage Suppressor
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1 Available 2 kw Surface Mount Transient Voltage Suppressor DESCRIPTION Screening in reference to MIL-PRF-190 available The MSMBG(J)2K3.0 MSMBG(J)2K5.0 series of surface mount 2.0 kilowatt transient voltage suppressors provide a selection of standoff voltages (V WM ) from 3.0 to 5.0 volts. These highreliability controlled devices feature unidirectional construction. The SMBG Gull-wing design in the DO-215AA package is ideal for visible solder connections. The SMBJ J-bend design in the DO-214AA package is ideal for greater PC board mounting density. It is also available as RoHS compliant. Important: For the latest information, visit our website FEATURES High reliability upscreened devices with wafer fabrication and assembly lot traceability. All devices 0% surge tested. Suppresses transients up to 2 8/20 µs. Other screening in reference to MIL-PRF-190 is also available. Refer to MicroNote 129 for more details on the screening options. (See part nomenclature for all options.) Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B. 3σ lot norm screening performed on standby current I D. RoHS compliant versions available. DO-215AA (SMBG) Package DO-214AA (SMBJ) Package NOTE: All SMB series are equivalent to prior SMS package identifications. APPLICATIONS / BENEFITS Voltage and reverse standby (leakage) current lowest available. Protects sensitive components such as IC s, CMOS, Bipolar, BiCMOS, ECL, DTL, T2L, etc. Protection from switching transients & induced RF. Compliant to IEC and IEC for ESD and EFT protection respectively. Secondary lightning protection per IEC with 42 ohms source impedance for class 1. MAXIMUM 25 ºC unless otherwise stated Parameters/Test Conditions Symbol Value Unit Junction and Storage Temperature T J and -65 to +1 o C T STG Peak Pulse Power Dissipation (1) 8/20 us /00us P PP W Off-State Power T L < 25 T A = 25 ºC P D (2) W T clamping (0 volts to V (BR) min) <0 ps Forward 30 A (3) V F 1.2 V Solder s T SP 260 o C Notes: 1. With impulse repetition rate (duty factor) of 0.01 maximum (also Figure 1 and 4). 2. When mounted on FR4 PC board (1oz Cu) with recommended footprint (see last page). 3. Peak impulse of 8.3 ms half-sine wave. MSC Lawrence 6 Lake Street, Lawrence, MA Tel: or (978) Fax: (978) MSC Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) Fax: +353 (0) Website: RF019, Rev. B (2/11/13) 2013 Microsemi Corporation Page 1 of 6
2 MECHANICAL and PACKAGING CASE: Void-free transfer molded thermosetting epoxy body meeting UL94V-0 requirements. TERMINALS: Tin-lead or RoHS compliant annealed matte-tin plating readily solderable per MIL- STD-7, method MARKING: Part number. POLARITY: Cathode end banded. TAPE & REEL option: Standard per EIA-296 (add TR suffix to part number). Consult factory for quantities. WEIGHT: 0.1 grams (approximate). See package dimensions on last page. PART NOMENCLATURE M SM B G 2K 3.0 (e3) Reliability Level* M MA MX MXL *(see MicroNote 129) Surface Mount Package Package Size RoHS Compliance e3 = RoHS Compliant Blank = non-rohs Compliant Stand-Off Voltage (V WM) (see Electrical Characteristics table) 2 kw Transient Suppression Lead Form G = Gull-Wing J = J-Bend SYMBOLS & DEFINITIONS Symbol Definition V WM Working Peak (Standoff) Voltage - The maximum peak voltage that can be applied over the operating temperature range. This is also referred to as standoff voltage. P PP Peak Pulse Power - Rated random recurring peak impulse power dissipation. V (BR) Breakdown Voltage - The minimum voltage the device will exhibit at a specified current. I D Standby Current - The current at the rated standoff voltage (V WM). I PP Peak Pulse Current - The peak current during the impulse. V C Clamping Voltage - Clamping voltage at I PP (Peak Pulse Current) at the specified pulse conditions (typically shown as maximum value). I (BR) Breakdown Current The current used for measuring breakdown voltage V (BR). ELECTRICAL 25 ºC PART NUMBER BREAKDOWN VOLTAGE Minimum BREAKDOWN CURRENT RATED STANDOFF VOLTAGE MAX STANDBY CURRENT MAX CLAMPING VOLTAGE PEAK PULSE CURRENT TEMPERATURE COEFFICIANT of V (BR) V (BR) I (BR) V WM I V WM V I PP I PP α V(BR) Gull-Wing J-Bend V ma V µa V A % / o C MSMBG2K3.0 MSMBG2K3.3 MSMBG2K4.0 MSMBG2K4.5 MSMBG2K5.0 MSMBJ2K3.0 MSMBJ2K3.3 MSMBJ2K4.0 MSMBJ2K4.5 MSMBJ2K / ±0.025 ±0.030 ± RF019, Rev. B (2/11/13) 2013 Microsemi Corporation Page 2 of 6
3 GRAPHS t w - Pulse Width - µs FIGURE 1 Peak Pulse Power vs Pulse Time IPP Peak Pulse Current % Ipp PPP Peak Pulse Power - kw Test waveform parameters tr=8 µs, tp=20 µs FIGURE 2 Pulse Waveform for 8/20 µs Exponential Surge RF019, Rev. B (2/11/13) 2013 Microsemi Corporation Page 3 of 6
4 GRAPHS (continued) t Time ms Test waveform parameters: tr= µs, tp=00µs FIGURE 3 Pulse Waveform for /00 Exponential Surge Peak Pulse Power (PPP) or continuous Power in Percent of 25 C Ratio Pulse Current in Percent of IPP T L Lead Temperature C FIGURE 4 Derating Curve RF019, Rev. B (2/11/13) 2013 Microsemi Corporation Page 4 of 6
5 PACKAGE DIMENSIONS SMBG (DO-215AA) Dimensions Min Max Min Max A B C E F K SMBJ (DO-214AA) Dimensions Min Max Min Max A B C D E L See pad layout on next page. RF019, Rev. B (2/11/13) 2013 Microsemi Corporation Page 5 of 6
6 PAD LAYOUT SMBG (DO-215AA) A B C SMBJ (DO-214AA) A B C RF019, Rev. B (2/11/13) 2013 Microsemi Corporation Page 6 of 6
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