JANS 2N5152U3 and JANS 2N5154U3

Transcription

1 RADIATION HARDENED NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/544 DESCRIPTION Qualified Levels: JANSM, JANSD, JANSP, JANSL, JANSR, JANSF These RHA level and silicon transistor devices are military Radiation Hardness Assurance qualified up to a JANSF level for high-reliability applications. Microsemi also offers numerous other products to meet higher and lower power voltage regulation applications. Important: For the latest information, visit our website FEATURES JEDEC registered 2N5152 and 2N5154. JANS RHA qualifications are available per MIL-PRF-19500/544. U3 (SMD-0.5) Package Also available in: TO-5 Package (long-leaded) JANS_2N5152L & JANS_2N5154L APPLICATIONS / BENEFITS High frequency operation. Lightweight. High-speed power-switching applications. High-reliability applications. TO-39 Package (leaded) JANS_2N5152 & JANS_2N5154 MAXIMUM RATINGS Parameters/Test Conditions Symbol alue Unit Junction and Storage Temperature T J and T STG -65 to +200 ºC Thermal Resistance Junction-to-Ambient R ӨJA 175 ºC/W Thermal Resistance Junction-to-Case R ӨJC 10 ºC/W Reverse Pulse Energy (1) 15 mj Collector Current (dc) I C 2 A Collector to base voltage (static), emitter open CBO 100 Collector to emitter voltage (static) base open CEO 80 Emitter to base voltage (static) collector open EBO 5.5 Steady-State Power T A = +25 ºC P D 1 W Steady-State Power T C = +25 ºC P D 10 W Notes: 1. This rating is based on the capability of the transistors to operate safely in the unclamped inductive load energy test circuit. MSC Lawrence 6 Lake Street, Lawrence, MA Tel: or (978) Fax: (978) MSC Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) Fax: +353 (0) Website: T4-LDS , Rev. 1 (120716) 2012 Microsemi Corporation Page 1 of 8

2 CASE: Ceramic and gold over nickel plated steel. TERMINALS: Gold over nickel plated tungsten/copper. MARKING: Part number, date code, A = anode. POLARITY: See schematic on last page. WEIGHT: 0.9 grams. See Package Dimensions on last page. MECHANICAL and PACKAGING PART NOMENCLATURE JANSM 2N5152 U3 Reliability Level JANSM 3K Rads (Si) JANSD 10K Rads (Si) JANSP 30K Rads (Si) JANSL 50K Rads (Si) JANSR 100K Rads (Si) JANSF 300K Rads (Si) SMD Surface Mount Package JEDEC type number (See Electrical Characteristics table) Symbol C obo I CEO I CEX I EBO h FE CEO CBO EBO SYMBOLS & DEFINITIONS Definition Common-base open-circuit output capacitance. Collector cutoff current, base open. Collector cutoff current, circuit between base and emitter. Emitter cutoff current, collector open. Common-emitter static forward current transfer ratio. Collector-emitter voltage, base open. Collector-emitter voltage, emitter open. Emitter-base voltage, collector open. T4-LDS , Rev. 1 (120716) 2012 Microsemi Corporation Page 2 of 8

3 ELECTRICAL T A = +25 ºC unless otherwise noted. OFF CHARACTERISTICS Collector-Emitter Breakdown oltage I C = 100 ma, I B = 0 Emitter-Base Cutoff Current EB = 4.0, I C = 0 EB = 5.5, I C = 0 Collector-Emitter Cutoff Current CE = 60, BE = 0 CE = 100, BE = 0 Collector-Emitter Cutoff Current CE = 40, I B = 0 (BR)CEO 80 I EBO I CES µa ma µa ma I CEO 50 µa ON CHARACTERISTICS Forward-Current Transfer Ratio I C = 50 ma, CE = 5 I C = 2.5 A, CE = 5 I C = 5A, CE = 5 Collector-Emitter Saturation oltage I C = 2.5 A, I B = 250 ma I C = 5.0 A, I B = 500 ma Base-Emitter oltage Non-Saturation I C = 2.5 A, CE = 5 Base-Emitter Saturation oltage I C = 2.5 A, I B = 250 ma I C = 5.0 A, I B = 500 ma h FE CE(sat) BE 1.45 BE(sat) DYNAMIC CHARACTERISTICS Magnitude of Common Emitter Small-Signal Short- Circuit Forward Current Transfer h fe 6 Ratio 7 I C = 500 ma, CE = 5, f = 10 MHz Small-signal short Circuit Forward-Current Transfer Ratio I C = 100 ma, CE = 5, f = 1 KHz Output Capacitance CB = 10, I E = 0, f = 1.0 MHz h fe C obo 250 pf T4-LDS , Rev. 1 (120716) 2012 Microsemi Corporation Page 3 of 8

4 ELECTRICAL T A = +25 C unless otherwise noted. (continued) SWITCHING CHARACTERISTICS Turn-On Time I C = 5 A, I B1 = 500 ma t on 0.5 µs Turn-Off Time R L = 6Ω t off 1.5 µs Storage Time I B2 = -500 ma t S 1.4 µs Fall Time BE(OFF) = 3.7 t f 0.5 µs SAFE OPERATING AREA (See SOA graph below and MIL-STD-750, method 3053) DC Tests T C = +25 C, t P = 1.0 s, 1 Cycle Test 1 CE = 5.0, I C = 2.0 A Test 2 CE = 32, I C = 310 ma Test 3 CE = 80, I C = 12.5 ma dc Operation T C < 25 ºC IC COLLECTOR CURRENT - A CE COLLECTOR EMITTER OLTAGE Maximum Safe Operating Area T4-LDS , Rev. 1 (120716) 2012 Microsemi Corporation Page 4 of 8

5 ELECTRICAL T A = +25 C, unless otherwise noted (continued) POST RADIATION ELECTRICAL CHARACTERISTICS Collector to Emitter Cutoff Current CE = 40 I CEO 100 µa Emitter to Base Cutoff Current EB = 4 I EBO 2.0 µa Breakdown oltage, Collector to Emitter I C = 100 ma (BR)CEO 80 Collector to Emitter Cutoff Current CE = 60 I CES 2.0 µa Emitter to Base Cutoff Current EB = 5.5 I EBO 2.0 ma Forward-Current Transfer Ratio (1) I C = 50 ma, CE = 5 I C = 2.5 A, CE = 5 I C = 5 A pulsed, CE = 5 [h FE ] [10] [25] [15] [35] [10] [20] Base to Emitter voltage (non-saturated) CE = 5, I C = 2.5 A, pulsed Collector-Emitter Saturation oltage I C = 2.5 ma, I B = 250 ma, pulsed I C = 500 ma, I B = 500 ma, pulsed Base-Emitter Saturation oltage I C = 2.5 A, I B = 250 ma, pulsed I C = 5 A, I B = 500 ma, pulsed BE 1.45 CE(sat) BE(sat) (1) See method 1019 of MIL-STD-750 for how to determine [h FE] by first calculating the delta (1/h FE) from the preand post-radiation h FE. Notice the [h FE] is not the same as h FE and cannot be measured directly. The [h FE] value can never exceed the pre-radiation minimum h FE that it is based upon. T4-LDS , Rev. 1 (120716) 2012 Microsemi Corporation Page 5 of 8

6 GRAPHS T C ( C) (Case) FIGURE 1 Temperature-Power Derating Curve DC Operation Maximum Rating (W) DC Operation Maximum Rating (W) T A ( C) (Ambient) FIGURE 2 Temperature-Power Derating Curve T4-LDS , Rev. 1 (120716) 2012 Microsemi Corporation Page 6 of 8

7 GRAPHS (continued) Theta ( o CW) Time (sec) FIGURE 3 Maximum Thermal Impedance (R ӨJC ) T4-LDS , Rev. 1 (120716) 2012 Microsemi Corporation Page 7 of 8

8 PACKAGE DIMENSIONS NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology. Schematic Symbol DIMENSIONS INCH MILLIMETERS Min Max Min Max BL BW CH LH LL LL LS1.150 BSC 3.81 BSC LS2.075 BSC 1.91 BSC LW LW Q Q Term 1 Cathode Term 2 Anode (See Schematic) Term 3 Anode (See Schematic) T4-LDS , Rev. 1 (120716) 2012 Microsemi Corporation Page 8 of 8