Features. Description. Table 1. Device summary. Device Qualification system Agency specification Package Radiation level EPPL

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Internal schematic diagram Hi-Rel NPN dual matched bipolar transistor Linear gain characteristics ESCC qualified European preferred part list - EPPL Radiation level: lot specific total dose contact

1 Hi-Rel NPN dual matched bipolar transistor 60 V, 0.03 A Features Datasheet - production data Symbol Value BV CEO 60 V I C (max) 0.03 A H FE at 10 V ma > 300 Operating temperature range -65 C to +200 C TO-77 LCC-6 Figure 1. Internal schematic diagram Hi-Rel NPN dual matched bipolar transistor Linear gain characteristics ESCC qualified European preferred part list - EPPL Radiation level: lot specific total dose contact marketing for specified level Description The 2N2920AHR is a silicon planar epitaxial NPN transistor in TO-77 and LCC-6 packages. It is specifically designed for aerospace Hi-Rel applications and is ESCC qualified according to the specification. In case of conflict between this datasheet and the ESCC specifications, the latter prevails. Table 1. Device summary Device Qualification system Agency specification Package Radiation level EPPL SOC2920AHRx ESCC Flight 5207/002 LCC-6 - Yes 2N2920AHRx ESCC Flight 5207/002 TO March 2016 DocID15383 Rev 6 1/12 This is information on a product in full production.

2 Contents 2N2920AHR Contents 1 Electrical ratings Electrical characteristics Electrical characteristics (curves) Package information TO-77 package information LCC-6 package information Ordering information Revision history /12 DocID15383 Rev 6

3 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V CBO Collector-base voltage (I E = 0) 60 V V CEO Collector-emitter voltage (I B = 0) 60 V V EBO Emitter-base voltage (I C = 0) 6 V I C Collector current 30 ma P TOT 1. One section. 2. Both sections Total dissipation at Tamb 25 C for TO-77 (1) for TO-77 (2) for LCC-6 (1) for LCC-6 (2) Total dissipation at Tc 25 C for TO-77 (1) for TO-77 (2) T STG Storage temperature -65 to 200 C TJ Max. operating junction temperature 200 C W W W W W W Table 3. Thermal data for through-hole package Symbol Parameter Value Unit Thermal resistance junction-case (1) max R thjc Thermal resistance junction-case (2) max Thermal resistance junction-ambient (1) max R thja Thermal resistance junction-ambient (2) max 1. One section. 2. Both sections C/W C/W C/W C/W Table 4. Thermal data for SMD package Symbol Parameter Value Unit Thermal resistance junction-ambient (1)(3) max R thja Thermal resistance junction-ambient (2)(3) max 1. One section. 2. Both sections. 3. When mounted on a 15 x 15 x 0.6 mm ceramic substrate C/W C/W DocID15383 Rev 6 3/12 12

4 Electrical characteristics 2N2920AHR 2 Electrical characteristics T case = 25 C unless otherwise specified Table 5. Electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit I CBO Collector-base cut-off current (I E = 0) V CB = 45 V V CB = 45 V T C = 150 C 2 10 na μa I CEO I EBO V (BR)CBO (1) V (BR)CEO V (BR)EBO (1) V CE(sat) V (1) BE(sat) Collector cut-off current (I B = 0) Emitter-base cut-off current (I C = 0) Collector-base breakdown voltage (I E = 0) Collector-emitter breakdown voltage (I B = 0) Emitter-base breakdown voltage (I C = 0) Collector-emitter saturation voltage Base-emitter saturation voltage V CE = 5 V 2 na V EB = 5 V 2 na I C = 10 μa 60 V I C = 10 ma 60 V I E = 10 μa 6 V I C = 1 ma I B = 0.1 ma 0.35 V I C = 1 ma I B = 0.1 ma V h FE (1) DC current gain I C = 10 µa I C = 100 µa I C = 1 ma V CE = 5 V V CE = 5 V V CE = 5 V I C = 10 µa V CE = 5 V T amb = -55 C 50 h FE2-1 / h FE2-2 DC current transfer ratio comparison I C = 100 µa V CE = 5 V T amb = -55 C to +25 C h FE2-1 / h FE2-2 DC current transfer ratio comparison I C = 100 µa V CE = 5 V T amb = -55 C to +125 C Δ V BE1 - V BE2 Base-emitter voltage differential V CE = 5 V I C = 10 µa V CE = 5 V I C = 100 µa V CE = 5 V I C = 1 ma mv mv mv Δ V BE1 - V BE2 Base-emitter voltage differential V CE = 5 V I C = 100 µa T amb = -55 C to +25 C T amb = +25 C to +125 C mv mv I Lk Leakage current between active devices V = 50 V to E 2, B 2, C 2 V = 0 V to E 1, B 1, C 1 5 µa 4/12 DocID15383 Rev 6

5 Electrical characteristics Table 5. Electrical characteristics (continued) Symbol Parameter Test conditions Min. Typ. Max. Unit f T Transition frequency I C = 0.5 ma V CE = 5 V 60 MHz h ob Output admittance V CE = 5 V f = 1 khz I C = 1 ma 1 µmho h ib Input impedance V CB = 5 V f = 1 khz I C = 1 ma Ω Cobo Output capacitance (I E = 0) V CB = 5 V 100 khz > f > 1 MHz 6 pf NF Noise figure V CE = 5 V I C = 10 µa R S = 10 kω f = 1 khz Bandwidth = 200 Hz 3 db NF Noise figure V CE = 5 V I C = 10 µa R S = 10 kω 10 Hz f 15.7 khz Bandwidth = 200 Hz 3 db 1. Pulsed duration = 300 µs, duty cycle > 1.5% DocID15383 Rev 6 5/12 12

6 Electrical characteristics 2N2920AHR 2.1 Electrical characteristics (curves) Figure 2. h V CE = 5 V Figure 3. V h FE = AM16342v TJ=-55 C TJ=-40 C TJ=25 C TJ=110 C TJ=125 C AM16343v TJ=-55 C TJ=-40 C TJ=25 C TJ=110 C TJ=125 C IC(A) Figure 4. V h FE = IC(A) AM16344v TJ=-55 C TJ=-40 C TJ=25 C TJ=110 C TJ=125 C IC(A) 6/12 DocID15383 Rev 6

7 Package information 3 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: ECOPACK is an ST trademark. 3.1 TO-77 package information Figure 5. TO-77 package outline B A C D E F L G I H _7 DocID15383 Rev 6 7/12 12

8 Package information 2N2920AHR Table 6. TO-77 package mechanical data Dim. mm Min Typ Max A B C D E F G H I L /12 DocID15383 Rev 6

9 Package information 3.2 LCC-6 package information Figure 6. LCC-6 package outline Pin 1 identification _5 Table 7. LCC-6 package mechanical data Dim. mm Min. Typ. Max. A C D E F G I L M N N N r 0.23 D DocID15383 Rev 6 9/12 12

10 Ordering information 2N2920AHR 4 Ordering information Table 8. Ordering information CPN Agency specification EPPL Quality level Radiation level Package Lead finish Marking (1) Packing SOC2920A1 - - Eng. model ESCC - LCC-6 Gold SOC2920A1 Waffle pack SOC2920AHRG 5207/002/12 Yes ESCC flight - LCC-6 Gold Waffle pack SOC2920AHRT 5207/002/15 Yes ESCC flight - LCC-6 Solder dip Waffle pack 2N2920AHRG 5207/002/03 - ESCC fight - TO-77 Gold Strip pack 2N2920AHRT 5207/002/06 - ESCC Flight - TO-77 Solder dip Strip pack 1. Specific marking only. The full marking includes in addition: For the Engineering Models: ST logo, date code; country of origin (FR). For ESCC flight parts: ST logo, date code, country of origin (FR), ESA logo, serial number of the part within the assembly lot. Contact ST sales office for information about the specific conditions for: Product in die form Tape and reel packaging 10/12 DocID15383 Rev 6

11 Revision history 5 Revision history Table 9. Document revision history Date Revision Changes 10-Dec Initial release 05-Jan Modified Table 1 on page 1 15-Nov Apr Added: Section 2.1: Electrical characteristics (curves) Updated: Section 3: Package information Updated: Table 1: Device summary and Table 2: Absolute maximum ratings. Minor text changes. 14-May Updated Section 3.2: LCC-6, package information. 16-Mar Updated Section 3.1: TO-77 package information and Section 3.2: LCC-6 package information. Minor text changes. DocID15383 Rev 6 11/12 12

12 IMPORTANT NOTICE PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document STMicroelectronics All rights reserved 12/12 DocID15383 Rev 6

Features. H FE at 10 V ma > 150. Description. Table 1. Device summary. Agency specification

Features. H FE at 10 V ma > 150. Description. Table 1. Device summary. Agency specification Hi-Rel PNP dual matched bipolar transistor 60 V, 0.05 A Features Datasheet - production data TO-78 1 2 3 4 5 6 LCC-6 Figure 1. Internal schematic diagram for TO-78 BV CEO I C (max) Hi-Rel PNP dual matched