2N3866 / 2N3866A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
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1 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features Silicon NPN, To39 packaged VHF/UHF Transistor Specified 400 MHz, 28Vdc Characteristics Output Power = 1.0 Watt Minimum Gain = 10 db Efficiency = 45% 800 MHz CurrentGain Bandwidth Product 1. Emitter 2. Base 3. Collector TO39 DESCRIPTION: Silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; predriver, driver, and output stages. Also suitable for oscillator and frequencymultiplier functions. ABSOLUTE MAXIMUM RATINGS (Tcase = 25 C) Symbol Parameter Value Unit V CEO CollectorEmitter 30 Vdc V CBO CollectorBase Voltage 55 Vdc V EBO EmitterBase Voltage 3.5 Vdc I C Collector Current 400 ma Thermal Data P D Total Device Dissipation Derate above 25ºC Watts mw/ ºC
2 ELECTRICAL SPECIFICATIONS (Tcase = 25 C) STATIC (off) BVCER CollectorEmitter Breakdown Voltage (IC = 5.0 madc, RBE = 10 ohms) 55 Vdc BVCEO BVCBO BVEBO ICEO ICEX (on) HFE VCE(sat) CollectorEmitter Sustaining Voltage (IC=5.0 madc, IB=0) 30 Vdc CollectorBase Breakdown Voltage (IE = 0, IC = 0.1 madc) 55 Vdc EmitterBase Breakdown Voltage (IE = 0.1 madc, IC = 0) 3.5 Vdc Collector Cutoff Current (VCE = 28 Vdc, IB = 0) 20 µa Collector Cutoff Current (VCE = 55 Vdc, VBE = 1.5 Vdc) 100 µa DC Current Gain (IC = 360 madc, VCE = 5.0 Vdc) Both (IC = 50 madc, VCE = 5.0 Vdc) 2N3866 (IC = 50 madc, VCE = 5.0 Vdc) 2N3866A CollectorEmitter Saturation Voltage (IC = 100 madc, IB = 20 madc) 1.0 Vdc DYNAMIC f T CurrentGain Bandwidth Product (IC = 50 madc, VCE = 15 Vdc, f = 200 MHz) 2N3866 2N3866A MHz COB Output Capacitance (VCB = 30 Vdc, IE = 0, f = 1.0 MHz) pf Rev B January 2009
3 FUNCTIONAL G PE Power Gain Test CircuitFigure 1 10 db Pout Output Power Test CircuitFigure Watts Collector Efficiency Test CircuitFigure 1 η C 45 % 860 L S P OUT (R L =50 OHMS) P IN (R S =50 OHMS) 860 L OHMS 1000 V CE = 28V Figure MHz RF AMPLIFIER CIRCUIT FOR G PE, P OUT, AND EFFICIENCY SPECIFICATIONS. L 1 : 2 TURNS No. 18 wire, ¼ ID, 1/8 long Capacitor values in pf unless otherwise indicated. L s : 2 ¾ TURNS No. 18 wire, ¼ ID, 3/16 long Tuning capacitors are air variable.
4 RF Low Power PA, LNA, and General Purpose Discrete Selector Guide Package Device Type SO8 MRF4427, R2 NPN TO39 2N4427 NPN POWER MACRO MRF553 NPN POWER MACRO MRF553T NPN TO39 MRF607 NPN TO39 2N6255 NPN TO72 2N5179 NPN MACRO X MRF559 NPN MACRO X MRF559 NPN TO39 2N3866A NPN SO8 MRF3866, R1, R2 NPN POWER MACRO MRF555 NPN POWER MACRO MRF555T NPN GPE Freq (MHz) Pout GPE (db) Efficiency (%) GPE VCC BVCEO IC max Packag Device Type Freq (MHz) NF (db) NF IC (ma) NF VCE GNF (db) Gu Max (db) Ftau (MHz) Ccb(pF) BVCE IC max (ma) TO39 2N5109 NPN TO39 MRF5943C NPN SO8 MRF5943, R1, R2 NPN TO72 2N5179 NPN TO72 2N2857 NPN TO39 MRF517 NPN TO72 MRF904 NPN TO72 2N6304 NPN MACRO T BFR91 NPN MACRO T BFR96 NPN SO8 MRF5812, R1, R2 NPN MACRO X MRF581A NPN Macro BFR90 NPN TO72 BFY90 NPN TO72 MRF914 NPN MACRO X MRF581 NPN TO39 MRF586 NPN MACRO X MRF559 NPN MACRO X MRF559 NPN SO8 MRF8372,R1,R2 NPN POWER MACRO MRF557 NPN POWER MACRO MRF557T NPN MACRO X MRF951 NPN MACRO X MRF571 NPN MACRO T BFR91 NPN MACRO T BFR90 NPN TO39 MRF545 PNP TO39 MRF544 NPN RF (Low Power PA / General Purpose) Selection RF (LNA / General Purpose) Selection Low Cost RF Plastic Package Options Macro T Macro X Power SO8
5
2N4427 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS. Features Silicon NPN, To-39 packaged VHF/UHF Transistor
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features Silicon NPN, To39 packaged VHF/UHF Transistor 1 Watt Minimum Power Output @ 175 MHz 500 MHz CurrentGain Bandwidth Product @ 50mA Power Gain, G PE
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MRF5943, R1, R2 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features Low Cost SO-8 Plastic Surface Mount Package.
140 COMMERCE DRIVE MONTGOMERYVILLE, PA PHONE: (215) FAX: (215)
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 G * G Denotes RoHS Compliant, Pb Free Terminal Finish Features
MRF581 MRF581G MRF581A MRF581AG
G RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS *G Denotes RoHS Compliant, Pb free Terminal Finish Features Low Noise - 2.5 db @ 500 MHZ Gain at Optimum Noise Figure = 15.5 db @ 500 MHz Ftau - 5.0 GHz
SS8050. V CE =1V, I C =5mA V CE =1V, I C =100mA. 9.0 pf f=1mhz f T Current Gain Bandwidth Product V CE =10V, I C =50mA MHz
SS8050 SS8050 2W Output Amplifier of Portable Radios in Class B Push-pull Operation. Complimentary to Collector Current: I C =.5A Collector Power Dissipation: P C =2W (T C =25 C). Emitter 2. Base 3. Collector
PD Operating Junction and Storage Temperature Range TJ, Tstg 65 to +150 C
SEMICONDUCTOR TECHNICAL DATA Order this document by MRF4427/D The RF Line Designed for amplifier, frequency multiplier, or oscillator applications in industrial equipment constructed with surface mount
TO-92 SOT-23 Mark: 3B. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
PN98 Discrete POWER & Signal Technologies MMBT98 C C B E TO-92 SOT-23 Mark: 3B B E This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the.0 ma to 30
MMBT5087L. Low Noise Transistor. PNP Silicon
Low Noise Transistor PNP Silicon Features NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ1 Qualified and PPAP Capable These Devices are PbFree,
NPN Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS. ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted)
SEMICONDUCTOR TECHNICAL DATA Order this document by /D NPN Silicon COLLECTOR 2 BASE EMITTER MAXIMUM RATINGS Rating Symbol 546 547 548 Unit Collector Emitter oltage CEO 65 45 dc Collector Base oltage CBO
UHF POWER TRANSISTOR
NPN SiGe RF TRANSISTOR The is a low cost, NPN medium power SiGe HBT(Hetero-Junction Bipolar Transistor) encapsulated in a plastic SOT-3 SMD package. The can be used as a driver device or an output device,
techniques, and gold metalization in the fabrication of this device.
Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip Technical Data AT-42 Features High Output Power: 21. dbm Typical P 1 db at 2. GHz 2.5 dbm Typical P 1 db at 4. GHz High Gain at 1 db Compression:
Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip. Technical Data AT-41400
Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip Technical Data AT-1 Features Low Noise Figure: 1.6 db Typical at 3. db Typical at. GHz High Associated Gain: 1.5 db Typical at 1.5 db Typical at. GHz
NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
Preferred Devices NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias
Silicon Bipolar Low Noise Microwave Transistors
Silicon Bipolar Low Noise Microwave Transistors MP42141 Features Case Styles Low Intrinsic Noise Figure (2.3dB Typical @ 1.0 GHz) High Power Gain At 1.0 GHz 18.0 db Typical Gold Metalization Hermetic and
E C B E. TO-92 SOT-23 Mark: 2X. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
2N4401 MMBT4401 C 2N4401 / MMBT4401 E C B E TO-92 SOT-23 Mark: 2X B NPN General Pupose Amplifier This device is designed for use as a medium power amplifier and switch requiring collector currents up to
Data Sheet. AT Up to 6 GHz Medium Power Silicon Bipolar Transistor. Description. Features. 85 Plastic Package
AT-85 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Description Avago s AT-85 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-85 is
50 Vdc Collector-Base Voltage VCEO. 50 Vdc Collector Current-Continuous VCBO. THERMAL CHARACTERISTICS Characteristics Symbol Value Unit
MMUN Series Bias Resistor Transistor NPN Silicon P b Lead(Pb)Free BASE COLLECTOR R R EMITTER SOT MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage VCEO 5 Vdc CollectorBase Voltage VCBO
NPN Silicon. MAXIMUM RATINGS MARKING DIAGRAMS. THERMAL CHARACTERISTICS (Note 1.) ORDERING INFORMATION
is a Preferred Device NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage VCEO 40 Vdc CollectorBase Voltage VCBO 60 Vdc EmitterBase Voltage VEBO 6.0 Vdc Collector Current Continuous
PNP Silicon. MAXIMUM RATINGS MARKING DIAGRAMS. THERMAL CHARACTERISTICS (Note 1.) ORDERING INFORMATION
Preferred Device PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage VCEO 40 Vdc CollectorBase Voltage VCBO 40 Vdc EmitterBase Voltage VEBO 5.0 Vdc Collector Current Continuous
Up to 6 GHz Medium Power Silicon Bipolar Transistor. Technical Data AT Plastic Package
Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-286 Features High Output Power: 2.5 dbm Typical P 1 db at 2. GHz High Gain at 1 db Compression: 13.5 db Typical G 1 db at 2. GHz Low
LM3046 Transistor Array
Transistor Array General Description The LM3046 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Two of the transistors are internally connected to form a differentiallyconnected
NPN SILICON OSCILLATOR AND MIXER TRANSISTOR
NPN SILICON OSCILLATOR AND MIXER TRANSISTOR NE944 SERIES FEATURES LOW COST HIGH GAIN BANDWIDTH PRODUCT: ft = MHz TYP LOW COLLECTOR TO BASE TIME CONSTANT: CC r b'b = 5 ps TYP LOW FEEDBACK CAPACITANCE: CRE=.55
Data Sheet. AT Up to 6 GHz Medium Power Silicon Bipolar Transistor. Features. Description. 100 mil Package. High Output Power:
AT-1 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Description Avago s AT-1 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-1 is housed
General Purpose Transistors
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Type Marking Pin Configuration Package BFR193 RCs 1 = B 2 = E 3 = C SOT23
Low Noise Silicon Bipolar RF Transistor For low noise, highgain amplifiers up to 2 GHz For linear broadband amplifiers f T = 8 GHz, NF min = 1 db at 900 MHz Pbfree (RoHS compliant) package Qualification
AT Up to 6 GHz Medium Power Silicon Bipolar Transistor. Data Sheet
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MJ21195 PNP MJ21196 NPN
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MMBT5087L. Low Noise Transistor. PNP Silicon
Low Noise Transistor PNP Silicon Features NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ1 Qualified and PPAP Capable These Devices are PbFree,
PD Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 25 C/W. Characteristic Symbol Min Typ Max Unit.
SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF Line Designed primarily for wideband large signal predriver stages in the UHF frequency range. Specified @.5 V, 7 MHz Characteristics @ Pout
TIP120, TIP121, TIP122,
... designed for general purpose amplifier and low speed switching applications. High DC Current Gain hfe = 2500 (Typ) @ IC = 4.0 Adc Collector Emitter Sustaining Voltage @ 100 madc VCEO(sus) = 60 Vdc
COLLECTOR BASE EMITTER BC 557 BC556. mw mw/ C PD PD Characteristic Symbol Min Typ Max Unit V(BR)CEO BC557 BC558 V(BR)CBO BC557 BC558
SEMICONDUCTOR TECHNICAL DATA Order this document by /D PNP Silicon COLLECTOR 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol BC 556 BC 557 BC 558 Unit Collector Emitter oltage CEO 65 45 3 dc Collector Base
1 AMPERE GENERAL PURPOSE POWER TRANSISTORS VOLTS 30 WATTS *MAXIMUM RATINGS THERMAL CHARACTERISTICS (2)
...designed for driver circuits, switching, and amplifier applications. These high performance plastic devices feature: Low Saturation Voltage VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp Excellent Power Dissipation
Surface Mount Low Noise Silicon Bipolar Transistor Chip. Technical Data AT-41411
Surface Mount Low Noise Silicon Bipolar Transistor Chip Technical Data AT-111 Features Low Noise Figure: 1. db Typical at 1. GHz 1.8 db Typical at 2. GHz High Associated Gain: 18. db Typical at 1. GHz
PD Storage Temperature Range Tstg 65 to +150 C. Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 4.
SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF Line... designed for 12.5 Volt UHF large signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. Specified
MJE243 - NPN, MJE253 - PNP
Preferred Device Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and lowcurrent, highspeed switching applications. Features High CollectorEmitter
PD Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 25 C/W. Characteristic Symbol Min Typ Max Unit.
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NPN Darlington Power Silicon Transistor Qualified per MIL-PRF-19500/502
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SD1731 (TH562) RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS. OPTIMIZED FOR SSB 30 MHz 50 VOLTS EFFICIENCY 40% COMMON EMITTER
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS OPTIMIZED FOR SSB 30 MHz 50 VOLTS. EFFICIENCY 40% COMMON EMITTER. GOLD METALLIZATION POUT = 220 W PEP WITH 13 db GAIN.500 4LFL (M174) epoxy sealed ORDER CODE
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BC857BTT1G. General Purpose Transistor. PNP Silicon
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TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP) Complementary Silicon Plastic Power Transistors
TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP) Complementary Silicon Plastic Power Transistors Designed for use in general purpose amplifier and switching applications. CollectorEmitter
Part Number Order Number Package Quantity Supplying Form. (Pb-Free)
NESGM NPN SiGe RF Transistor for Low Noise, High-in Amplification Flat-Lead -Pin Thin-Type Super Minimold (M) FEATURES The device is an ideal choice for low noise, high-gain at low current amplifications.
4 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 15 WATTS MAXIMUM RATINGS THERMAL CHARACTERISTICS. Figure 1. Power Derating BD787
... designed for lower power audio amplifier and low current, high speed switching applications. Low Collector Emitter Sustaining Voltage VCEO(sus) 60 Vdc (Min) BD787, BD788 High Current Gain Bandwidth
16 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS 200 WATTS
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Agilent AT Up to 6 GHz Low Noise Silicon Bipolar Transistor Data Sheet
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3 Volt, Low Noise High ft Silicon Transistor. MP4T6310 Series. Features SOT-23. Description SOT-143. Chip
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SEMICONDUCTOR TECHNICAL DATA Order this document by 2N5883/D... designed for general purpose power amplifier and switching applications. Low Collector Emitter Saturation Voltage VCE(sat) = 1. Vdc, (max)
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MCH5541 PNP/NPN Bipolar Transistor ( )30V, ( )700mA, VCE(sat) ; ( 220)190mV (max)
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2N5194 2N for use in power amplifier and switching circuits, excellent safe area limits. Complement to NPN 2N5191, 2N5192
... for use in power amplifier and switching circuits, excellent safe area limits. Complement to NPN 2N5191, 2N5192 ÎÎ *MAXIMUM RATINGS ÎÎ Rating ÎÎ Symbol Î 2N5194 Î Unit ÎÎ Collector Emitter Voltage
LM3046 Transistor Array
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MJE15028 MJE AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON VOLTS 50 WATTS MAXIMUM RATINGS THERMAL CHARACTERISTICS
... designed for use as high frequency drivers in audio amplifiers. DC Current Gain Specified to 4.0 Amperes hfe = 40 (Min) @ IC = 3.0 Adc = 20 (Min) @ IC = 4.0 Adc Collector Emitter Sustaining Voltage
MMBT3906. PNP General Purpose Amplifier
Features Collector current capability IC = -200 ma Collector-emitter voltage VCEO = -40 V RoHS compliant package Application General switching and amplification Mechanical Data Case outline: SOT-23 Packing
BC856BDW1T1, BC857BDW1T1 Series, BC858CDW1T1 Series
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HIGH COLLECTOR TO EMITTER VOLTAGE DARLINGTON TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES
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MJW3281A (NPN) MJW132A (PNP) Complementary NPN-PNP Silicon Power Bipolar Transistors The MJW3281A and MJW132A are PowerBase power transistors for high power audio, disk head positioners and other linear
ARCHIVE INFORMATION MMBR951 MRF957. Freescale Semiconductor, I. The RF Line SEMICONDUCTOR TECHNICAL DATA
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MCC. 2N5401 )HDWXUHV. PNP Silicon Amplifier Transistor 625mW 0HFKDQLFDO'DWD TO-92
omponents 20736 Marilla Street Chatsworth!"# $%!"# 2N5401 )HDWXUHV Through Hole Package 1 o C Junction Temperature Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)
2N5400, 2N5401. PNP Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM THERMAL CHARACTERISTICS
Preferred Device Amplifier Transistors PNP Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol 2N5400 Unit Collector Emitter Voltage V CEO 1 1 Collector Base Voltage V CBO 1 160
MPSA18G. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM THERMAL CHARACTERISTICS
Preferred Device Low Noise Transistor NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 45 Vdc Collector Base Voltage V CBO 45
Dual General Purpose Transistors
DATA SHEET SEMICONDUCTOR Dual General Purpose Transistors NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT 363/SC 88 which is designed for
MJE15028, MJE15030 (NPN), MJE15029, MJE15031 (PNP) Complementary Silicon Plastic Power Transistors
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2SC6033 2SC6033. High-Speed Swtching Applications DC-DC Converter Applications Storobe Flash Applications. Maximum Ratings (Ta = 25 C)
TOSHIBA Transistor Silicon NPN Epitaxial Type SC633 HighSpeed Swtching Applications DCDC Converter Applications Storobe Flash Applications High DC current gain: hfe = to 4 (IC =.3 A) Low collectoremitter
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
NPN Silicon RF Transistor For IF amplifiers in TVsat tuners and for VCR modulators Pbfree (RoHS compliant) package 1) Qualified according AEC Q101 1 2 ESD (Electrostatic discharge) sensitive device, observe
SD1488 RF POWER BIPOLAR TRANSISTORS UHF MOBILE APPLICATIONS
RF POWER BIPOLAR TRANSISTORS UHF MOBILE APPLICATIONS FEATURES SUMMARY 470 MHz 12.5 VOLTS EFFICIENCY % COMMON EMITTER P OUT = 38 W MIN. WITH 5.8 db GAIN DESCRIPTION The SD1488 is a 12.5 V Class C epitaxial
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2N6515, 2N6517, 2N65 High Voltage Transistors NPN and PNP Features Voltage and Current are Negative for PNP Transistors PbFree Package is Available* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol 2N6515 2N6517
MJH6284 (NPN), MJH6287 (PNP) Darlington Complementary Silicon Power Transistors
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General Purpose Transistor NPN Silicon Moisture Sensitivity Level: ESD Rating: Human Body Model: >4 Machine Model: >4 This is a PbFree Device MAXIMUM RATINGS COLLECTOR Rating Symbol alue Unit CollectorEmitter
Type Marking Pin Configuration Package BFR92P GFs 1=B 2=E 3=C SOT23
NPN Bipolar RF Transistor For broadband amplifiers up to 2 GHz and fast nonsaturated switches at collector currents from 0.5 ma to 20 ma 3 1 2 Pbfree (RoHS compliant) package Qualification report according
100 Vdc Collector Base Voltage Emitter Base Voltage Collector Current Continuous. Adc Peak. Watts Derate above 25 C. Watts 25 C
... designed for low power audio amplifier and low current, high speed switching applications. High Collector Emitter Sustaining Voltage VCEO(sus) = 100 (Min) MJE243, MJE253 High DC Current Gain @ IC =
UNISONIC TECHNOLOGIES CO., LTD
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MPSA9, MPSA9 is a Preferred Device High Voltage Transistors PNP Silicon MAXIMUM RATINGS CollectorEmitter Voltage CollectorBase Voltage Rating Symbol Value Unit MPSA9 MPSA9 V CEO V CBO 00 00 00 00 EmitterBase
LM3046 Transistor Array
Transistor Array General Description The LM3046 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Two of the transistors are internally connected to form a differentiallyconnected
Darlington Transistors
Features: Designed for general-purpose amplifier and low speed switching applications Collector-emitter sustaining voltage - V CEO (sus) = 60 V (minimum) - TIP120, TIP125 80 V (minimum) - TIP121, TIP126
Silicon Bipolar High f T Low Noise Medium Power 12 Volt Transistors
Silicon Bipolar High f T Low Noise Medium Power 1 Volt Transistors Features Low Phase Noise Oscillator Transistor mw Driver Amplifier Transistor Operation to GHz Available as Available in Hermetic Surface
SEMICONDUCTOR TECHNICAL DATA
SEMICONDUCTOR TECHNICAL DATA Order this document by 2N355/D... designed for general purpose switching and amplifier applications. DC Current Gain hfe = 7 @ IC = 4 Adc Collector Emitter Saturation Voltage
Type Marking Pin Configuration Package BFP196 RIs 1 = C 2 = E 3 = B 4 = E - - SOT143
Low Noise Silicon Bipolar RF Transistor For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to.5 GHz at collector currents from 4 3 0 ma to 80 ma Power amplifier
2N3055A (NPN), MJ15015 (NPN), MJ15016 (PNP) Complementary Silicon High Power Transistors
(NPN), MJ (NPN), MJ6 (PNP) MJ and MJ6 are Preferred Devices Complementary Silicon HighPower Transistors These PowerBase complementary transistors are designed for high power audio, stepping motor and other
BC856BWT1, SBC856BWT1 Series, BC857BWT1, SBC857BWT1 Series, BC858AWT1 Series. General Purpose Transistors. PNP Silicon
BC856BWT1, SBC856BWT1, BC857BWT1, SBC857BWT1, BC858AWT1 General Purpose Transistors PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SC7/SOT2
BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series. Dual General Purpose Transistors PNP Duals
BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications.
BC856ALT1 Series. General Purpose Transistors. PNP Silicon. MAXIMUM RATINGS (T A = 25 C unless otherwise noted) MARKING DIAGRAM
Preferred Devices General Purpose Transistors PNP Silicon MAXIMUM RATINGS ( unless otherwise noted) Rating Symbol alue Unit CollectorEmitter oltage BC856 BC857 BC858, BC859 CollectorBase oltage BC856 BC857
DATA SHEET P D * mw C/W. Packing. Packing SOT-23 SOT /Reel 3000/Reel SOT-23 SOT /Reel 3000/Reel SOT-23.
DATA SHEET SEMICONDUCTOR NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor
Obsolete Product(s) - Obsolete Product(s)
MMBT2222A APPLICATIONS WELL SUITABLE FOR PORTABLE EQUIPMENT SMALL LOAD SWITCH TRANSISTOR WITH HIGH GAIN AND LOW SATURATION OLTAGE SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Type Marking MMBT2222A M22
AT General Purpose, Low Current NPN Silicon Bipolar Transistor. Data Sheet
AT-4532 General Purpose, Low Current NPN Silicon Bipolar Transistor Data Sheet Description Avago s AT-4532 is a general purpose NPN bipolar transistor that has been optimized for maximum f t at low voltage
SEMICONDUCTOR TECHNICAL DATA
SEMICONDUCTOR TECHNICAL DATA Order this document by /D NPN Silicon COLLECTOR 3 BASE EMITTER MAXIMUM RATINGS Rating Symbol Unit Collector Emitter Voltage VCEO 3 5 Vdc Collector Base Voltage VCBO 4 3 Vdc
2N2219A 2N2222A HIGH SPEED SWITCHES
2N2219A 2N2222A HIGH SPEED SWITCHES DESCRIPTION The 2N2219A and 2N2222A are silicon planar epitaxial NPN transistors in Jedec TO-39 (for 2N2219A) and in Jedec TO-18 (for 2N2222A) metal case. They are designed
BCP53 Series. PNP Silicon Epitaxial Transistors MEDIUM POWER HIGH CURRENT SURFACE MOUNT PNP TRANSISTORS
PNP Silicon Epitaxial Transistors This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT package which is designed for medium power surface
PD Characteristic Symbol Max Unit Thermal Resistance, Junction to Case (2) RθJC 1.75 C/W. Characteristic Symbol Min Typ Max Unit
SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF Line... designed for 13.6 volt VHF large signal class C and class AB linear power amplifier applications in commercial and industrial equipment.
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1145
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA45 Audio Frequency Amplifier Applications Unit: mm Complementary to 2SC275. Small Collector Output Capacitance: Cob = 2.5 pf (typ.) High Transition
CA3018, CA3018A. General Purpose Transistor Arrays. Features. Applications. Part Number Information. Pinout. [ /Title () /Autho.
[ /Title /Subject /Autho /Keyords ) /Cretor /DOCI FO dfark /Pageode /Useutines /DOC- IEW dfark Semiconductor General Purpose Transistor Arrays The CA8 and CA8A consist of four general purpose silicon NPN
MJD112, NJVMJD112T4G (NPN), MJD117, NJVMJD117T4G (PNP) Complementary Darlington Power Transistors
MJD, NJVMJDT4G (NPN), MJD7, NJVMJD7T4G (PNP) Complementary Darlington Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in
MUN5211T1 Series. NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network NPN SILICON BIAS RESISTOR TRANSISTORS
MUNT Series Preferred Devices Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single