Silicon Bipolar High f T Low Noise Medium Power 12 Volt Transistors
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1 Silicon Bipolar High f T Low Noise Medium Power 1 Volt Transistors Features Low Phase Noise Oscillator Transistor mw Driver Amplifier Transistor Operation to GHz Available as Available in Hermetic Surface Mount Packages Description The series of high f T NPN medium power bipolar transistors are designed for usage in oscillators to GHz and for moderate power driver amplifiers through 3 GHz with noise figure below db. This industry standard transistor is available as a chip for hybrid oscillator circuits or in hermetic ceramic packages for military usage. The chip and hermetic packages may be screened to JANTXV equivalent levels. Case Styles V3. The MPT3 transistors utilize sub-micron photolithography and locos oxidation techniques to minimize parasitic capacitances. It also reduces shot noise enabling improved low noise characteristics. These transistors use a high temperature refractory barrier/gold metalization process. The MPT3 transistor is emitter ballasted using ion implanted polysilicon resistors to prevent emitter current hot spots at high current operation. M-Pulse Microwave 1
2 Silicon Bipolar High f T Low Noise Medium Power 1 Volt Transistors Absolute Maximum 5 C Parameter Symbol Unit V3. Collector-Base Voltage 1 V CBO Volts 5 5 Collector-Emitter Voltage 1 V CEO Volts 1 1 Emitter-Base Voltage 1 V EBO Volts Collector Current 1 I C ma Junction Temperature T j C Storage Temperature T STG C -5 to + -5 to + Power Dissipation 1,3 P T mw 1 Operating Temperature T CP C At 5 C case temperature (packaged transistors) or 5 C mounting surface temperature (chip transistors).. Case or bonding surface temperature. Derate maximum power dissipation rating to zero watts at maximum operating temperature. 3. The thermal resistance of the junction/case is 5 C/watt nominal. Electrical 5 C Parameter Condition Symbol Units Gain Bandwidth Product V CE = 1 volts f T GHz 7 typ 7 typ Insertion Power Gain V CE = 1 volts S 1E db f = 1 GHz 1 min 11 min f = GHz typ typ Noise Figure V CE = 1 volts NF db I C = ma f = 1 GHz 3 typ 3 typ Unilateral Gain V CE = 1 volts GTU (max) ab f = GHz 11 typ 1.5 typ Maximum Available Gain V CE = 1 volts MAG db f = GHz 15 typ 15 typ Power Out at 1 db Compression V CE = 1 volts P 1dB dbm f = 1 GHz typ typ f = GHz typ typ pecification Subject to Change Without Notice M-Pulse Microwave
3 Moderate Power High ft NPN Silicon Transistor Electrical 5 C Parameter Condition Symbol Min Typical Max Units Collector Cut-off Current V CB = 15 volts I CBO 1 µa I E = µa Emitter Cut-off Current V EB = 1 volt I EBO 1 µa I C = µa Forward Current Gain V CE = volts h FE 9 5 I C = 5 ma Collector Base V CB = 1 volts C CB.. pf Junction Capacitance I E = µa f = 1 MHz V. Typical Scattering Parameters in the MIcro-X Package V CE = 1 Volts, I C = 1 ma Frequency S11E S1E S1E SE V CE = 1 Volts, I C = ma Frequency S11E S1E S1E SE M-Pulse Microwave 3
4 Silicon Bipolar High f T Low Noise Medium Power 1 Volt Transistors V3. Typical Scattering Parameters in the MIcro-X Package ( Continued ) V CE = 1 Volts, Frequency S11E S1E S1E SE V CE = 1 Volts, I C = ma Frequency S11E S1E S1E SE pecification Subject to Change Without Notice M-Pulse Microwave
5 Moderate Power High ft NPN Silicon Transistor V. Typical Performance Curves DC SAFE OPERATING RANGE AT 5 C on 5C Heat Sink COLLECTOR EMITTER VOLTAGE (Volts) TOTAL POWER DISSIPATION (mw) POWER DERATING CURVES on 5C Heat Sink AMBIENT TEMP (C) COLLECTOR-BASE CAPACITANCE (pf) NOMINAL COLLECTOR-BASE CAPACITANCE vs COLLECTOR-BASE VOLTAGE () COLLECTOR-BASE VOLTAGE (Volts) GAIN (db) NOMINAL GAIN vs FREQUENCY at V CE = 1 Volts and I C = ma (MAT335) S 1 GTU (MAX) 1 1 FREQUENCY (GHz) M-Pulse Microwave 5
6 Silicon Bipolar High f T Low Noise Medium Power 1 Volt Transistors V3. Typical Performance Curves (Cont d) GAIN (db) NOMINAL GAIN vs COLLECTOR CURRENT at F = GHz and V CE = 1 VOLTS () MAG GTU (MAX) S 1E GAIN BANDWIDTH PRODUCT in GHz NOMINAL GAIN BANDWIDTH PRODUCT (f T) vs COLLECTOR CURRENT at V CE = and 1 VOLTS () 1 VOLTS VOLTS DC CURRENT GAIN NOMINAL DC CURRENT GAIN (h FE) vs COLLECTOR CURRENT at V CE = VOLTS () 5 1 NOISE ASSOCIATD FIGURE(dB) GAIN (db) NOMINAL NOISE FIGURE and ASSOCIATED GAIN vs COLLECTOR CURRENT at 1 GHz and V CE = 1 VOLTS () ASSOCIATED GAIN NOISE FIGURE P 1dB (dbm) NOMINAL OUTPUT POWER at the 1dB COMPRESSION POINT vs COLLECTOR CURRENT at F = 1 and GHz, V CE = VOLTS () 1 GHz GHz pecification Subject to Change Without Notice M-Pulse Microwave
7 Moderate Power High ft NPN Silicon Transistor V. Case Styles B C A Base DIM. INCHES MILLIMETERS A B C.7.1 D (Dia.)..3 E ( Thickness).5.11 D Emitter Emitter E Collector Emitter B F PLCS. Base H INCHES MILLIMETERS DIM. MIN. MAX. MIN. MAX. A B C D E F G H 5 5 A C G D M-Pulse Microwave 7
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RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MRF5943, R1, R2 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features Low Cost SO-8 Plastic Surface Mount Package.
TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2406. JEDEC Storage temperature range T stg 55 to 150 C
TOSHIBA Transistor Silicon NPN Triple Diffused Type Power Amplifier Applications Unit: mm High power dissipation: P C = W () Good h FE linearity Absolute Maximum Ratings () Characteristics Symbol Rating
ZXTN2010A 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE. SUMMARY BV CEO = 60V : R SAT = 34m ; I C = 4.5A DESCRIPTION FEATURES APPLICATIONS
60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE SUMMARY BV CEO = 60V : R SAT = 34m ; I C = 4.5A DESCRIPTION Packaged in the E-line outline this new low saturation 60V NPN transistor offers extremely
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2655
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC26 Power Amplifier Applications Power Switching Applications Industrial Applications Unit: mm Low saturation voltage: V CE (sat) =. V (max)
ZX5T851G 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223. SUMMARY BV CEO = 60V : R SAT = 35m DESCRIPTION FEATURES APPLICATIONS PINOUT
60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BV CEO = 60V : R SAT = 35m ; I C = 6A DESCRIPTION Packaged in the SOT223 outline this new 5 th generation low saturation 60V NPN transistor
ZX5T851A 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE. SUMMARY BV CEO = 60V : R SAT = 34m ; I C = 4.5A DESCRIPTION FEATURES APPLICATIONS
60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE SUMMARY BV CEO = 60V : R SAT = 34m ; I C = 4.5A DESCRIPTION Packaged in the E-line outline this new 5th generation low saturation 60V NPN transistor
UNISONIC TECHNOLOGIES CO., LTD 2SC5569
UNISONIC TECHNOLOGIES CO., LTD SC69 DC/DC CONVERTER APPLICATIONS FEATURES *High current capacitance. *Low collector-to-emitter saturation voltage. *High-speed switching. *High allowable power dissipation.
2SC5784 2SC5784. High-Speed Switching Applications DC-DC Converter Applications. Maximum Ratings (Ta = 25 C) Electrical Characteristics (Ta = 25 C)
TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5784 High-Speed Switching Applications DC-DC Converter Applications Industrial Applications Unit: mm High DC current gain: hfe = 4 to (IC =.5 A) Low collector-emitter
Type Marking Pin Configuration Package BFP520 APs 1=B 2=E 3=C 4=E - - SOT343
BFP Low Noise Silicon Bipolar RF Transistor Low noise amplifier designed for low voltage applications, ideal for. V or. V supply voltage Common e.g. in cordless phones, satellite receivers and oscillators
FMMT620 SUMMARY V CEO =80V; R SAT. = 90m ;I C = 1.5A SOT23. SuperSOT 80V NPN SILICON LOW SATURATION TRANSISTOR
SuperSOT 80V NPN SILICON LOW SATURATION TRANSISTOR SUMMARY V CEO =80V; R SAT = 90m ;I C = 1.5A DESCRIPTION Enhancing the existing SuperSOT range this 80V NPN transistor utilises the Zetex matrix structure
UNISONIC TECHNOLOGIES CO., LTD MJE13007D NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD MJE13007D NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007D is designed for high-voltage, high-speed power switching inductive
NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/366
Available on commercial versions NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/366 Qualified Levels: JAN, JANTX, JANTXV and JANS DESCRIPTION This family of 2N3498 thru 2N3501 epitaxial planar transistors
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.
Product description The is a wideband NPN RF heterojunction bipolar transistor (HBT). Feature list Low noise figure NF min = 1 db at 5.5 GHz, 3 V, 6 ma High gain G ms = 21 db at 5.5 GHz, 3 V, 15 ma OIP
TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4793
TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4793 Power Amplifier Applications Driver Stage Amplifier Applications Unit: mm High transition frequency: f T = MHz (typ.) Complementary to 2SA837 Absolute
MUN52xxDWT DEVICE MARKING, RESISTOR VALUES AND ORDERING INFORMATION Device Marking R(K) R2(K) Shipping MUN52DWT SOT-363 7A /Tape&Reel MUN522DW
MUN52xxDWT NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors;
MULTI CHIP ARRAY COMPLEMENTARY 4x 2N2222A 4x 2N2907A COMMON EMITTER BIPOLAR TRANSISTORS MCABT8E2207C6
MULTI CHIP ARRAY COMPLEMENTARY 4x 2N2222A 4x 2N2907A Hermetic MO-042AA (LCC6) Silicon Planar Epitaxial 4x 2N2222A NPN & 4x 2N2907A PNP Transistors In A Common Emitter High Speed Low Saturation Switching