Watts W/ C Storage Temperature Range Tstg 65 to +200 C Operating Junction Temperature TJ 200 C. Test Conditions

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1 SEMICONDUCTOR TECHNICAL DATA The RF Sub Micron MOSFET Line N Channel Enhancement Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies in the MHz band. The high gain and broadband performance of these devices makes them ideal for large signal, common source amplifier applications in 26 volt base station equipment. Typical CDMA 880 MHz, 26 Volts, IDQ = ma IS 97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 Output Power 40 Watts Power Gain 17 db Efficiency 26% Adjacent Channel Power 750 khz: khz BW 1.98 MHz: khz BW Internally Matched, Controlled Q, for Ease of Use High Gain, High Efficiency and High Linearity Integrated ESD Protection Ease of Design for Gain and Insertion Phase Flatness Capable of Handling :1 26 Vdc, 880 MHz, 170 Watts (CW) Output Power Excellent Thermal Stability Characterized with Series Equivalent Large Signal Impedance Parameters 880 MHz, 170 W, 26 V LATERAL N CHANNEL BROADBAND RF POWER MOSFETs CASE 375D 01, STYLE 2 (MRF90) CASE 375E 01, STYLE 2 (MRF90S) MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDSS 65 Vdc Gate Source Voltage VGS +15, 0.5 Vdc Total Device TC = 25 C Derate above 25 C PD Watts W/ C Storage Temperature Range Tstg 65 to +200 C Operating Junction Temperature TJ 200 C ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model Machine Model 1 (Typical) M1 (Typical) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 0.45 C/W NOTE CAUTION MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV

2 ELECTRICAL CHARACTERISTICS (TC = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS (1) Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0) Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0) Gate Source Leakage Current (VGS = 5 Vdc, VDS = 0 ) ON CHARACTERISTICS (1) Gate Threshold Voltage (VDS = Vdc, ID = 300 µadc) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 700 madc) Drain Source On Voltage (VGS = Vdc, ID = 2 Adc) Forward Transconductance (VDS = Vdc, ID = 6 Adc) DYNAMIC CHARACTERISTICS (1) Output Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Reverse Transfer Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) FUNCTIONAL TESTS (In Motorola Test Fixture) (2) Two Tone Common Source Amplifier Power Gain f1 = MHz, f2 = MHz) Two Tone Drain Efficiency f1 = MHz, f2 = MHz) 3rd Order Intermodulation Distortion f1 = MHz, f2 = MHz) Input Return Loss f1 = MHz, f2 = MHz) Two Tone Common Source Amplifier Power Gain f1 = MHz, f2 = MHz) Two Tone Drain Efficiency f1 = MHz, f2 = MHz) 3rd Order Intermodulation Distortion f1 = MHz, f2 = MHz) Input Return Loss f1 = MHz, f2 = MHz) Power Output, 1 db Compression Point (, CW, IDQ = ma, f1 = MHz) (1) Each side of device measured separately. (2) Device measured in push pull configuration. IDSS µadc IDSS 1 µadc IGSS 1 µadc VGS(th) Vdc VGS(Q) 3.7 Vdc VDS(on) Vdc gfs 6 S Coss 77 pf Crss 3.8 pf Gps 17.5 db η % IMD dbc IRL 9 15 db Gps 17.5 db η 38.5 % IMD 31 dbc IRL 13 db P1dB 170 W

3 ELECTRICAL CHARACTERISTICS (TC = 25 C unless otherwise noted) (continued) FUNCTIONAL TESTS (In Motorola Test Fixture) (2) (continued) Characteristic Symbol Min Typ Max Unit Common Source Amplifier Power Gain (, Pout = 170 W CW, IDQ = ma, f1 = MHz) Drain Efficiency (, Pout = 170 W CW, IDQ = ma, f1 = MHz) Output Mismatch Stress (, Pout = 170 W CW, IDQ = ma, f = 880 MHz, VSWR = :1, All Phase Angles at Frequency of Tests) (1) Each side of device measured separately. (2) Device measured in push pull configuration. Gps.5 db η 55 % Ψ No Degradation In Output Power Before and After Test

4 VGG + C13 B2 B4 C C C22 L3 B6 VDD C26 C27 C28 COAX 1 R1 C Z Z20 Z22 Z24 C20 COAX 3 C17 RF INPUT Z1 Z2 L1 Z3 C1 Z6 Z4 Z7 C3 Z8 Z Z12 C6 C4 Z9 Z11 Z13 C7 Z C8 Z15 Z Z17 DUT C Z26 Z28 L4 Z29 RF OUTPUT Z5 C2 C5 C9 Z27 C29 R2 COAX 2 COAX 4 VGG + C11 B1 B3 C12 Z19 Z21 Z23 Z25 C19 C15 L2 B5 VDD C21 C23 C24 C25 B1, B2, B5, B6 Long Ferrite Beads, Surface Mount B3, B4 Short Ferrite Beads, Surface Mount C pf, Variable Capacitor C2, C3, C5, C6, C12, C, 47 pf, Chip Capacitors, B Case C19, C20, C21, C22 C4, C9, C, C15, C 12 pf, Chip Capacitors, B Case C pf, Variable Capacitor C8 7.5 pf, Chip Capacitor, B Case C11, C13 µf, 35 V Tantalum Surface Mount Chip Capacitors C pf, Chip Capacitor, B Case C 5.1 pf, Chip Capacitor, B Case C23, C24, C26, C27 22 µf, 35 V Tantalum Surface Mount Chip Capacitors C25, C µf, 50 V Electrolytic Capacitors C pf, Variable Capacitor Coax1, Coax2 25 Ω, Semi Rigid Coax, 70 mil OD, 1.05 Long Coax3, Coax4 50 Ω, Semi Rigid Coax, 85 mil OD, 1.05 Long L1, L2, L3.5 nh, Mini Spring Inductors, Coilcraft L nh, Mini Spring Inductor, Coilcraft R1, R2 5 Ω, 1/ W Chip Resistors Z1 T-Line, x Z2 T-Line, x Z3 T-Line, x Z4, Z5, Z26, Z27 T-Line, x Z6, Z7 T-Line, x Z8, Z9 T-Line, x Z, Z11 T-Line, x Z12, Z13 T-Line, x Z, Z15 T-Line, x Z, Z17 T-Line, x Z, Z19 T-Line, x Z20, Z21 T-Line, x Z22, Z23 T-Line, x Z24, Z25 T-Line, x Z28 T-Line, x Z29 T-Line, x Board 30 mil Teflon, Material εr = 2.55, Copper Clad, 2 oz Cu Figure MHz Broadband Test Circuit Schematic

5 C13 VGG B2 B4 MRF90 900MHz PUSH PULL Rev 01 B6 C26 C27 C28 VDD C C22 L1 C1 C2 C3 C4 C6 C5 C7 Resistor Resistor R1 R2 C12 C8 C C9 CUT OUT AREA C C15 L3 C17 L2 C21 C C20 C19 L4 C29 C11 VGG B1 B3 B5 C23 C24 C25 VDD Figure MHz Broadband Test Circuit Component Layout

6 TYPICAL CHARACTERISTICS Gps, POWER GAIN (db) Gps IMD IRL Pout = 170 Watts (PEP) IDQ = ma Two Tone Measurement 36 0 khz Tone Spacing f, FREQUENCY (MHz) , DRAIN EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dbc) 12 IRL, INPUT RETURNLOSS (db) Figure 3. Class AB Broadband Circuit Performance Gps, POWER GAIN (db) 19 ÎÎÎ 2000 ma ÎÎÎ 1700 ma ÎÎÎ 00 ma 10 ma ÎÎÎ 800 ma f MHz IMD, INTERMODULATION DISTORTION (dbc) f2 = MHz 880 ma 00 ma 10 ma 2000 ma 1700 ma Figure 4. Power Gain versus Output Power Figure 5. Intermodulation Distortion versus Output Power IMD, INTERMODULATION DISTORTION (dbc) IDQ = ma f2 = MHz 3rd Order 5th Order 7th Order Gps, POWER GAIN (db) 12 8 Gps IDQ = ma , DRAIN EFFICIENCY (%) Figure 6. Intermodulation Distortion Products versus Output Power Figure 7. Power Gain and Efficiency versus Output Power

7 Gps, POWER GAIN (db) Gps IMD IDQ = ma f MHz , DRAIN EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dbc) Gps, POWER GAIN (db) Gps 750 MHz 1.98 MHz IDQ = ma f = 880 MHz IS-97, Pilot, Sync, Paging Traffic Codes 8 through , DRAIN EFFICIENCY (%) ACPR, ADJACENT CHANNEL POWER RATIO (db) Pout, OUTPUT POWER (WATTS) AVG. Figure 8. Power Gain, Efficiency and IMD versus Output Power Figure 9. Power Gain, Efficiency and ACPR versus Output Power

8 Zo = Ω Zin f = 895 MHz ZOL* f = 895 MHz f = 865 MHz f = 865 MHz VDD = 26 V, IDQ = ma, Pout = 170 W (PEP) f MHz Zin Ω j j j1. ZOL* Ω j j j1.51 Zin = Complex conjugate of source impedance. ZOL* = Complex conjugate of the optimum load impedance at a given output power, voltage, IMD, bias current and frequency. Note: ZOL* was chosen based on tradeoffs between gain, output power, drain efficiency and intermodulation distortion. Input Matching Network Device Under Test Output Matching Network Z in Z OL * Figure. Series Equivalent Input and Output Impedance