Characteristic Symbol Value (1,2) Unit Thermal Resistance, Junction to Case Case Temperature 80 C, 20 W CW
|
|
- Darrell Gray
- 6 years ago
- Views:
Transcription
1 Technical Data Document Number: MRF5S9100 Rev. 4, 5/2006 Replaced by MRF5S9100NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead-free terminations. RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF5S9100MR1 MRF5S9100MBR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications in 26 volt base station equipment. Typical Single-Carrier N-CDMA 880 MHz, V DD = 26 Volts, I DQ = 950 ma, P out = 20 Watts Avg., IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = MHz. PAR = % Probability on CCDF. Power Gain 19.5 db Drain Efficiency 28% 750 khz Offset khz Bandwidth Capable of Handling 10:1 26 Vdc, 880 MHz, 100 Watts CW Output Power Characterized with Series Equivalent Large- Signal Impedance Parameters Internally Matched for Ease of Use Qualified Up to a Maximum of 32 V DD Operation Integrated ESD Protection 200 C Capable Plastic Package In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. Table 1. Maximum Ratings Rating Symbol Value Unit Drain-Source Voltage V DSS - 0.5, +68 Vdc Gate-Source Voltage V GS - 0.5, +15 Vdc Total Device T C = 25 C Derate above 25 C 880 MHz, 20 W AVG., 26 V SINGLE N- CDMA LATERAL N- CHANNEL RF POWER MOSFETs CASE , STYLE 1 TO-270 WB-4 PLASTIC MRF5S9100MR1 P D CASE , STYLE 1 TO-272 WB-4 PLASTIC MRF5S9100MBR1 Storage Temperature Range T stg - 65 to +150 C Operating Junction Temperature T J 200 C W W/ C Table 2. Thermal Characteristics Characteristic Symbol Value (1,2) Unit Thermal Resistance, Junction to Case Case Temperature 80 C, 20 W CW R θjc 0.52 C/W 1. MTTF calculator available at Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to Select Documentation/Application Notes - AN1955. NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed., Inc., All rights reserved. 1
2 Table 3. ESD Protection Characteristics Test Conditions Class Human Body Model (per JESD22-A114) 1C (Minimum) Machine Model (per EIA/JESD22-A115) A (Minimum) Charge Device Model (per JESD22-C101) IV (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Rating Package Peak Temperature Unit Per JESD 22-A113, IPC/JEDEC J-STD C Table 5. Electrical Characteristics (T C = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Off Characteristics Zero Gate Voltage Drain Leakage Current (V DS = 68 Vdc, V GS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (V DS = 26 Vdc, V GS = 0 Vdc) Gate-Source Leakage Current (V GS = 5 Vdc, V DS = 0 Vdc) On Characteristics Gate Threshold Voltage (V DS = 10 Vdc, I D = 400 μa) Gate Quiescent Voltage (V DS = 26 Vdc, I D = 950 madc) Drain-Source On-Voltage (V GS = 10 Vdc, I D = 2.0 Adc) Forward Transconductance (V DS = 10 Vdc, I D = 6 Adc) Dynamic Characteristics (1) Output Capacitance (V DS = 26 Vdc ± 30 1 MHz, V GS = 0 Vdc) Reverse Transfer Capacitance (V DS = 26 Vdc ± 30 1 MHz, V GS = 0 Vdc) I DSS 10 μadc I DSS 1 μadc I GSS 1 μadc V GS(th) Vdc V GS(Q) 3.7 Vdc V DS(on) Vdc g fs 7 S C oss 70 pf C rss 2.2 pf Functional Tests (In Freescale Test Fixture, 50 ohm system) V DD = 26 Vdc, I DQ = 950 ma, P out = 20 W Avg. N-CDMA, f = 880 MHz, Single-Carrier N-CDMA, MHz Channel Bandwidth Carrier. ACPR measured in 30 khz ±750 khz Offset. PAR = % Probability on CCDF Power Gain G ps db Drain Efficiency η D % Adjacent Channel Power Ratio ACPR dbc Input Return Loss IRL db 1. Part is internally input matched. 2
3 V BIAS + C22 + C21 + C20 C19 B1 C18 + C17 C16 C15 V SUPPLY + + C14 C13 L1 L2 RF INPUT Z1 C1 Z2 Z3 C2 Z4 C3 Z5 C4 Z6 C6 Z7 C5 Z8 DUT Z9 C8 Z10 C7 Z11 Z12 C10 C9 Z13 C11 Z14 C12 RF OUTPUT Z15 Z1, Z x Microstrip Z x Microstrip Z x Microstrip Z x Microstrip Z x Microstrip Z6, Z x x Taper Z x Microstrip Z x Microstrip Z x Microstrip Z x Microstrip Z x Microstrip Z x Microstrip Z x Microstrip PCB Arlon GX0300, 0.030, ε r = 2.55 Figure 1. MRF5S9100MR1(MBR1) Test Circuit Schematic Table 6. MRF5S9100MR1(MBR1) Test Circuit Component Designations and Values Part Description Part Number Manufacturer B1 Ferrite Bead, Surface Mount Fair-Rite C1, C12, C18 18 pf Chip Capacitors 100B180JP 500X ATC C pf Variable Capacitor, Gigatrim 27271SL Johanson Dielectrics C3, C pf Variable Capacitors, Gigatrim 27291SL Johanson Dielectrics C4 6.2 pf Chip Capacitor 100B6R2JP 500X ATC C5, C6 12 pf Chip Capacitors 100B120JP 500X ATC C7, C8 11 pf Chip Capacitors 100B110JP 500X ATC C9, C pf Chip Capacitors 100B5R1JP 500X ATC C F, 63 V Electrolytic Capacitor NACZF471M63V Nippon C14, C15 22 F, 50 V Tantalum Capacitors T491X226K035AS Kemet C16, C17, C F, 50 V Chip Capacitors C1825C564J5GAC Kemet C20, C21 47 F, 16 V Tantalum Capacitors T491D4T6K016AS Kemet C F, 50 V Electrolytic Capacitor 515D107M050BB6A Multicomp L nh Inductor CoilCraft L2 22 nh Inductor B07T-5 CoilCraft 3
4 C21 C20 C15 C14 V GG C22 C19 C16 C13 V DD C1 C2 C3 C4 B1 C18 L1 C6 C5 WB1 CUT OUT AREA Figure 2. MRF5S9100MR1(MBR1) Test Circuit Component Layout WB2 C8 C7 L2 C17 C10 C9 C11 MRF9100M Rev 2 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. C12 4
5 TYPICAL CHARACTERISTICS G ps, POWER GAIN (db) G ps, POWER GAIN (db) G ps, POWER GAIN (db) G ps η D V DD = 26 Vdc, P out = 20 W (Avg.), I DQ = 950 ma 20 N CDMA IS 95 (Pilot, Sync, Paging, Traffic 14 IRL Codes 8 through 13) ACPR ALT f, FREQUENCY (MHz) Figure 3. IS-95 Broadband P out = 20 Watts Avg G ps η D V DD = 26 Vdc, P out = 2 W (Avg.), I DQ = 950 ma 4 N CDMA IS 95 (Pilot, Sync, Paging, Traffic 14 Codes 8 through 13) 40 IRL ACPR η D, DRAIN EFFICIENCY (%) ALT f, FREQUENCY (MHz) Figure 4. IS-95 Broadband P out = 2 Watts Avg I DQ = 1425 ma ma ma 1425 ma 35 I DQ = 475 ma ma ma ma ma 700 ma V DD = 26 Vdc, f1 = 880 MHz, f2 = MHz V DD = 26 Vdc, f1 = 880 MHz, f2 = MHz 65 Two Tone Measurements, 100 khz Tone Spacing Two Tone Measurements, 100 khz Tone Spacing P out, OUTPUT POWER (WATTS) PEP P out, OUTPUT POWER (WATTS) PEP Figure 5. Two- Tone Power Gain versus Output Power IMD, THIRD ORDER INTERMODULATION DISTORTION (dbc) ACPR (dbc), ALT (dbc) η D, DRAIN EFFICIENCY (%) ACPR (dbc), ALT (dbc) INPUT RETURN LOSS (db) IRL, INPUT RETURN LOSS (db) IRL, Figure 6. Third Order Intermodulation Distortion versus Output Power 5
6 TYPICAL CHARACTERISTICS INTERMODULATION DISTORTION (dbc) IMD, G ps, POWER GAIN (db) rd Order 5th Order 7th Order V DD = 26 Vdc, P out = 96 W (PEP), I DQ = 950 ma Two Tone Measurements, Center Frequency = 880 MHz 1 10 TWO TONE SPACING (MHz) Figure 7. Intermodulation Distortion Products versus Tone Spacing G ps, POWER GAIN (db) η D, DRAIN EFFICIENCY (%) V DD = 26 Vdc, I DQ = 950 ma, f = 880 MHz N CDMA IS 95 (Pilot, Sync, Paging, Traffic Codes 8 through 13) ACPR G ps η D ALT P out, OUTPUT POWER (WATTS) AVG. Figure 9. Single- Carrier N- CDMA ACPR, Power Gain, Efficiency and ALT1 versus Output Power I DQ = 950 ma f = 880 MHz MTTF FACTOR (HOURS x AMPS 2 ) 58 Ideal 57 P3dB = dbm (143 W) P1dB = dbm (117 W) Actual V DD = 26 Vdc, I DQ = 950 ma 49 Pulsed CW, 8 μsec(on), 1 msec(off) Center Frequency = 880 MHz P in, INPUT POWER (dbm) Figure 8. Pulse CW Output Power versus Input Power V 24 V V 32 V 17.5 V DD = 12 V P out, OUTPUT POWER (WATTS) CW T J, JUNCTION TEMPERATURE ( C) Figure 10. Power Gain versus Output Power This above graph displays calculated MTTF in hours x ampere 2 drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTTF factor by I 2 D for MTTF in a particular application. P out, OUTPUT POWER (dbm) ACPR, ADJACENT CHANNEL POWER RATIO (dbc) ALT1, CHANNEL POWER (dbm) Figure 11. MTTF Factor versus Junction Temperature
7 f = 895 MHz f = 865 MHz Z load f = 895 MHz f = 865 MHz Z source Z o = 5 Ω f MHz V DD = 26 Vdc, I DQ = 950 ma, P out = 20 W Avg. Z source Ω j j j1.7 Z load Ω j j j0.5 Z source = Test circuit impedance as measured from gate to ground. Z load = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 12. Series Equivalent Source and Load Impedance 7
8 PACKAGE DIMENSIONS B E1 2X E3 A GATE LEAD DRAIN LEAD D1 D 4X e aaa 4X b1 M C A A2 NOTE 7 A1 2X D2 c1 D3 H 4 3 DATUM PLANE F ZONE J 2X E 2X E2 E5 E4 E5 BOTTOM VIEW C SEATING PLANE PIN 5 A NOTE CASE ISSUE C TO-270 WB-4 PLASTIC MRF5S9100MR1 NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M DATUM PLANE H IS LOCATED AT THE TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE. 4. DIMENSIONS D" AND E1" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS.006 PER SIDE. DIMENSIONS D" AND E1" DO INCLUDE MOLD MISMATCH AND ARE DETER MINED AT DATUM PLANE H. 5. DIMENSION b1" DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE.005 TOTAL IN EXCESS OF THE b1" DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. DATUMS A AND B TO BE DETERMINED AT DATUM PLANE H. 7. DIMENSION A2 APPLIES WITHIN ZONE J" ONLY. 8. HATCHING REPRESENTS THE EXPOSED AREA OF THE HEAT SLUG. INCHES MILLIMETERS DIM MIN MAX MIN MAX A A A D D D D E E E E E E F.025 BSC 0.64 BSC b c e.106 BSC 2.69 BSC aaa STYLE 1: PIN 1. DRAIN 2. DRAIN 3. GATE 4. GATE 5. SOURCE 8
9 9
10 10
11 11
12 How to Reach Us: Home Page: USA/Europe or Locations Not Listed: Technical Information Center, CH N. Alma School Road Chandler, Arizona or Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen Muenchen, Germany (English) (English) (German) (French) support@freescale.com Japan: Japan Ltd. Headquarters ARCO Tower 15F 1-8-1, Shimo-Meguro, Meguro-ku, Tokyo Japan or support.japan@freescale.com Asia/Pacific: Hong Kong Ltd. Technical Information Center 2 Dai King Street Tai Po Industrial Estate Tai Po, N.T., Hong Kong support.asia@freescale.com For Literature Requests Only: Literature Distribution Center P.O. Box 5405 Denver, Colorado or Fax: LDCForFreescaleSemiconductor@hibbertgroup.com Information in this document is provided solely to enable system and software implementers to use products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. reserves the right to make changes without further notice to any products herein. makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters that may be provided in data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals, must be validated for each customer application by customer s technical experts. does not convey any license under its patent rights nor the rights of others. products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the product could create a situation where personal injury or death may occur. Should Buyer purchase or use products for any such unintended or unauthorized application, Buyer shall indemnify and hold and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescale and the Freescale logo are trademarks of, Inc. All other product or service names are the property of their respective owners., Inc All rights reserved. Document Number: MRF5S Rev. 4, 5/2006 RoHS-compliant and/or Pb-free versions of Freescale products have the functionality and electrical characteristics of their non-rohs-compliant and/or non-pb-free counterparts. For further information, see or contact your Freescale sales representative. For information on Freescale s Environmental Products program, go to
RF Power Field Effect Transistor Array N-Channel Enhancement-Mode Lateral MOSFET
Technical Data Document Number: Rev. 6, 7/2005 Will be replaced by MRF9002NR2 in Q305. N suffix indicates 260 C reflow capable. The PFP-16 package has had lead-free terminations from its initial release.
More informationP D Storage Temperature Range T stg - 65 to +175 C Operating Junction Temperature T J 200 C
Technical Data Document Number: MRF6S186 Rev. 2, 5/26 Replaced by MRF6S186NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition
More informationRF LDMOS Wideband Integrated Power Amplifiers
Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MW4IC00 wideband integrated circuit is designed for use as a distortion signature device in analog predistortion systems. It uses Freescale
More informationRF LDMOS Wideband 2-Stage Power Amplifiers
Technical Data RF LDMOS Wideband 2-Stage Power Amplifiers Designed for broadband commercial and industrial applications with frequencies from 132 MHz to 960 MHz. The high gain and broadband performance
More informationCharacteristic Symbol Value Unit Thermal Resistance, Junction to Case. Test Conditions
Technical Data Document Number: Rev. 5, 5/2006 RF LDMOS Wideband Integrated Power Amplifier The wideband integrated circuit is designed for base station applications. It uses Freescale s newest High Voltage
More informationWatts W/ C Storage Temperature Range T stg 65 to +150 C Operating Junction Temperature T J 200 C. Test Conditions MRF9085SR3/MRF9085LSR3
SEMICONDUCTOR TECHNICAL DATA Order this document by MRF9085/D The RF Sub Micron MOSFET Line N Channel Enhancement Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with
More informationGallium Arsenide PHEMT RF Power Field Effect Transistor
Technical Data Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL base station applications with frequencies from 3400 to 3600 MHz. Suitable for TDMA and CDMA amplifier applications.
More informationCharacteristic Symbol Value Unit Thermal Resistance, Junction-to-Case R θjc 6 C/W
Technical Data Silicon Lateral FET, N-Channel Enhancement-Mode MOSFET Designed for use in medium voltage, moderate power amplifiers such as portable analog and digital cellular radios and PC RF modems.
More informationARCHIVE INFORMATION MW4IC2230MBR1 MW4IC2230GMBR1. Freescale Semiconductor. Technical Data. Document Number: MW4IC2230 Rev.
Technical Data Replaced by MW4IC2230NBR1(GNBR1). There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead- free terminations.
More informationLIFETIME BUY LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09. RF Power Field-Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF374A
Technical Data Document Number: Rev. 5, 5/26 LIFETIME BUY RF Power Field-Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies
More informationRF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
Technical Data Reference Design Library Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Device Characteristics (From Device Data Sheet) Designed for broadband commercial and industrial
More informationWatts W/ C Storage Temperature Range T stg 65 to +200 C Operating Junction Temperature T J 200 C. Test Conditions
SEMICONDUCTOR TECHNICAL DATA Order this document by MRF19125/D The RF Sub Micron MOSFET Line N Channel Enhancement Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies
More information921 MHz-960 MHz SiFET RF Integrated Power Amplifier
Technical Data 9 MHz-96 MHz SiFET RF Integrated Power Amplifier The MHVIC9HNR integrated circuit is designed for GSM base stations, uses Freescale s newest High Voltage (6 Volts) LDMOS IC technology, and
More informationRF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
Technical Data RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz The high gain and
More informationRF LDMOS Wideband Integrated Power Amplifiers
Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2230N wideband integrated circuit is designed for W-CDMA base station applications. It uses Freescale s newest High Voltage (26 to
More informationRF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz The high gain and
More informationRF LDMOS Wideband Integrated Power Amplifier MHVIC2115R2. Freescale Semiconductor, I. The Wideband IC Line SEMICONDUCTOR TECHNICAL DATA
MOTOROLA nc. SEMICONDUCTOR TECHNICAL DATA Order this document by /D The Wideband IC Line RF LDMOS Wideband Integrated Power Amplifier The wideband integrated circuit is designed for base station applications.
More informationWatts W/ C Storage Temperature Range T stg 65 to +150 C Operating Junction Temperature T J 200 C. Test Conditions
SEMICONDUCTOR TECHNICAL DATA Order this document by MRF21125/D The RF Sub Micron MOSFET Line N Channel Enhancement Mode Lateral MOSFETs Designed for W CDMA base station applications with frequencies from
More informationRF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
Technical Data RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed primarily for large- signal output applications at 2450 MHz. Device is suitable for use in industrial,
More informationRF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs RF Power transistors designed for applications operating at 10 MHz. These devices are suitable for use in pulsed
More informationARCHIVE INFORMATION. RF Power Field Effect Transistor N- Channel Enhancement- Mode Lateral MOSFET MRF21120R6. Freescale Semiconductor.
Technical Data RF Power Field Effect Transistor N- Channel Enhancement- Mode Lateral MOSFET Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA,
More informationRF Power Field Effect Transistor N- Channel Enhancement- Mode Lateral MOSFET
Technical Data RF Power Field Effect Transistor N- Channel Enhancement- Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 2600 to 2700 MHz Suitable for WiMAX, WiBro
More informationRF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs RF Power transistors designed for CW and pulsed applications operating at 1300 MHz. These devices are suitable
More informationARCHIVE INFORMATION. Cellular Band RF Linear LDMOS Amplifier MHL9838. Freescale Semiconductor. Technical Data MHL9838. Rev.
Technical Data Rev. 4, 1/2005 Replaced by N. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead-free terminations. Cellular
More informationTable 5. Electrical Characteristics (T A = 25 C unless otherwise noted)
Technical Data RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies up to 00 MHz The high gain and broadband
More informationELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS (1) Drain Source Breakdown V
SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF MOSFET Line N Channel Enhancement Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 800
More informationRF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed primarily for large--signal output applications at 2450 MHz. Devices are suitable
More informationARCHIVE INFORMATION. PCS Band RF Linear LDMOS Amplifier MHL Freescale Semiconductor. Technical Data MHL Rev. 4, 1/2005
Technical Data Rev. 4, 1/25 Replaced by N. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead-free terminations. PCS Band
More informationRF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
Technical Data RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for Class A or Class AB base station applications with frequencies up to 2000 MHz. Suitable for analog
More informationHeterostructure Field Effect Transistor (GaAs HFET) Broadband High Linearity Amplifier
Technical Data Heterostructure Field Effect Transistor (GaAs HFET) Broadband High Linearity Amplifier The is a General Purpose Amplifier that is internally input and output prematched. It is designed for
More informationARCHIVE INFORMATION. Cellular Band RF Linear LDMOS Amplifier MHL9236MN. Freescale Semiconductor. Technical Data
Technical Data Cellular Band RF Linear LDMOS Amplifier Designed for ultra- linear amplifier applications in ohm systems operating in the cellular frequency band. A silicon FET Class A design provides outstanding
More informationHeterojunction Bipolar Transistor (InGaP HBT) Broadband High Linearity Amplifier
Technical Data Heterojunction Bipolar Transistor (InGaP HBT) Broadband High Linearity Amplifier The is a General Purpose Amplifier that is internally input and output matched. It is designed for a broad
More informationARCHIVE INFORMATION. Cellular Band RF Linear LDMOS Amplifier MHL9318. Freescale Semiconductor. Technical Data MHL9318. Rev.
Technical Data Rev. 3, 1/2005 Replaced by N. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead-free terminations. Cellular
More informationRF Power Field Effect Transistors N- Channel Enhancement- Mode Lateral MOSFETs
Technical Data RF Power Field Effect Transistors N- Channel Enhancement- Mode Lateral MOSFETs Designed primarily for CW large-signal output and driver applications with frequencies up to 600 MHz. Devices
More informationRF LDMOS Wideband 2-Stage Power Amplifiers
Technical Data RF LDMOS Wideband 2-Stage Power Amplifiers Designed for broadband commercial and industrial applications with frequencies from 132 MHz to 960 MHz. The high gain and broadband performance
More informationLIFETIME BUY LAST ORDER 1 JUL 11 LAST SHIP 30 JUN MHz -960 MHz SiFET RF Integrated Power Amplifier MHVIC910HNR2. Freescale Semiconductor
LIFETIME BUY Technical Data 9 MHz -96 MHz SiFET RF Integrated Power Amplifier The MHVIC9HNR integrated circuit is designed for GSM base stations, uses Freescale s newest High Voltage (6 Volts) LDMOS IC
More informationRF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed primarily for CW large-signal output and driver applications at 2450 MHz. Devices are suitable for use
More informationRF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET
Technical Data RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET RF Power transistor designed for applications operating at frequencies between 960 and 400 MHz, % to 20% duty
More informationRF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
Technical Data RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed primarily for pulsed wideband applications with frequencies up to 150 MHz. Device is unmatched and is
More informationFigure 1. MRF6S27015NR1(GNR1) Test Circuit Schematic
Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2000 to 2700 MHz. Suitable for WiMAX, WiBro,
More informationRF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 1.8 and 600 MHz. These devices
More informationRF Power Field Effect Transistors N- Channel Enhancement- Mode Lateral MOSFETs
Technical Data RF Power Field Effect Transistors N- Channel Enhancement- Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 18 to 2 MHz. Suitable for TDMA,
More informationELECTRICAL CHARACTERISTICS continued (T C = 25 C unless otherwise noted) ON CHARACTERISTICS Gate Threshold Voltage (V DS = 10 Vdc, I D = 100 µa) Chara
SEMICONDUCTOR TECHNICAL DATA Order this document by MRF182/D The RF MOSFET Line N Channel Enhancement Mode Lateral MOSFETs High Gain, Rugged Device Broadband Performance from HF to 1 GHz Bottom Side Source
More informationRF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
Technical Data RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain
More informationARCHIVE INFORMATION. RF Power Field-Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF377 MRF377R3 MRF377R5. Freescale Semiconductor
Technical Data Document Number: MRF377 Rev. 1, 12/2004 RF Power Field-Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies
More informationRF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed primarily for CW large--signal output and driver applications with frequencies up to 600 MHz. Devices
More informationRF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies from 211 to 217 MHz. Can be used in Class
More informationRF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for W--CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA
More informationRating Symbol Value Unit Drain Source Voltage V DSS 65 Vdc Gate Source Voltage V GS ±20 Vdc Total Device T C = 25 C Derate above 25 C
SEMICONDUCTOR TECHNICAL DATA Order this document by MRF284/D The RF Sub Micron MOSFET Line N Channel Enhancement Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from
More informationRF LDMOS Wideband Integrated Power Amplifiers
Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MWE6IC9N wideband integrated circuit is designed with on-chip matching that makes it usable from 869 to 96 MHz. This multi-stage structure
More informationRF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for W--CDMA and LTE base station applications with frequencies from 211 to 217 MHz. Can be used in
More informationRF LDMOS Wideband Integrated Power Amplifiers. Freescale Semiconductor, I MW5IC2030MBR1 MW5IC2030GMBR1. The Wideband IC Line
MOTOROLA nc. SEMICONDUCTOR TECHNICAL DATA Order this document by MW5IC23M/D The Wideband IC Line RF LDMOS Wideband Integrated Power Amplifiers The MW5IC23 wideband integrated circuit is designed for base
More informationRF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog
More informationRF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET
Freescale Semiconductor Technical Data RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET Designed primarily for CW large--signal output and driver applications with frequencies up to
More informationP D Storage Temperature Range T stg - 65 to +150 C Operating Junction Temperature T J 200 C
Technical Data Document Number: MRF1535T1 Rev. 8, 5/06 Replaced by MRF1535NT1/FNT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition
More informationRF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET
Freescale Semiconductor Technical Data RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET RF power transistor suitable for industrial heating applications operating at 2450 MHz. Device
More informationRF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET
Freescale Semiconductor Technical Data RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET Designed for Class A or Class AB power amplifier applications with frequencies up to 2000 MHz.
More informationRF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for WiMAX base station applications with frequencies up to 2700 MHz. Suitable for WiMAX, WiBro, BWA,
More informationRF Power Field Effect Transistor N- Channel Enhancement- Mode Lateral MOSFET
Technical Data RF Power Field Effect Transistor N- Channel Enhancement- Mode Lateral MOSFET Designed primarily for wideband applications with frequencies up to 0 MHz. Device is unmatched and is suitable
More informationHeterojunction Bipolar Transistor (InGaP HBT) Broadband High Linearity Amplifier
Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor (InGaP HBT) Broadband High Linearity Amplifier The is a general purpose amplifier that is internally input and output matched. It
More informationRF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
Freescale Semiconductor Technical Data RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs RF power transistors suitable for both narrowband and broadband CW or pulse
More informationCMOS Micro-Power Comparator plus Voltage Follower
Freescale Semiconductor Technical Data Rev 2, 05/2005 CMOS Micro-Power Comparator plus Voltage Follower The is an analog building block consisting of a very-high input impedance comparator. The voltage
More informationRF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET
Technical Data RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and
More informationARCHIVE INFORMATION. RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs MRF6P3300HR3 MRF6P3300HR5. Freescale Semiconductor
Technical Data Document Number: MRF6P3300H Rev. 2, /08 MRF6P3300HR3/HR replaced by MRFE6P3300HR3/HR. Refer to Device Migration PCN1289 for more details. RF Power Field Effect Transistor N-Channel Enhancement-Mode
More informationCharacteristic Symbol Value (2,3) Unit
LIFETIME BUY Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for W--CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable
More informationCharacteristic Symbol Value (2,3) Unit
LIFETIME BUY Technical Data RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET Designed for W--CDMA base station applications with frequencies from 1805 to 1880 MHz. Suitable
More informationP D Storage Temperature Range T stg - 65 to +150 C Operating Junction Temperature T J 150 C
Technical Data Document Number: MRF1511 Rev., 5/ Replaced by MRF1511NT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead-free
More informationARCHIVE INFORMATION. RF Power Field -Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET MRF372R3 MRF372R5. Freescale Semiconductor
Technical Data Document Number: MRF372 Rev. 9, 5/2006 RF Power Field -Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies
More informationRF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET
Freescale Semiconductor Technical Data RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 865 to 96 MHz. Can
More informationRF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier
More informationRF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed primarily for pulsed wideband applications with frequencies up to 500 MHz. Devices are unmatched and
More informationV GS(th) Vdc. V GS(Q) 2.6 Vdc. V GG(Q) Vdc. V DS(on) Vdc
Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for CDMA and multicarrier base station applications with frequencies from
More informationRF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for pulse and CW wideband applications with frequencies up to 500 MHz. Devices
More informationFreescale Semiconductor, I
nc. SEMICONDUCTOR TECHNICAL DATA Order this document by MRF282/D The RF Sub Micron MOSFET Line N Channel Enhancement Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications
More informationCharacteristic Symbol Value (1,2) Unit. Test Methodology. Human Body Model (per JESD22--A114) Machine Model (per EIA/JESD22--A115)
Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1805 to 1880 MHz. Can be used
More informationRF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for W--CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz. Can be used
More informationWatts W/ C Storage Temperature Range Tstg 65 to +150 C Operating Junction Temperature TJ 200 C
SEMICONDUCTOR TECHNICAL DATA Order this document by MRF184/D The RF MOSFET Line N Channel Enhancement Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies to
More informationHeterojunction Bipolar Transistor (InGaP HBT) Broadband High Linearity Amplifier
Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor (InGaP HBT) Broadband High Linearity Amplifier The is a general purpose amplifier that is internally input and output matched. It
More informationRating Symbol Value Unit Drain-Source Voltage V DSS 40 Vdc Gate-Source Voltage V GS ± 20 Vdc Total Device T C = 25 C Derate above 25 C
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF157T1/D The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial
More informationRF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs
Freescale Semiconductor Technical Data RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR military, aerospace and defense,
More informationPD Storage Temperature Range Tstg 65 to +200 C Operating Junction Temperature TJ 200 C
SEMICONDUCTOR TECHNICAL DATA Order this document by MRF187/D Product Is Not Recommended for New Design. The next generation of higher performance products are in development. Visit our online Selector
More informationELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown
SEMICONDUCTOR TECHNICAL DATA Order this document by MRF20060R/D The RF Sub Micron Bipolar Line The MRF20060R and MRF20060RS are designed for class AB broadband commercial and industrial applications at
More informationRF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs RF power transistors designed for CW and pulse applications operating at 1300 MHz. These devices are suitable
More informationRF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for CDMA, W--CDMA and LTE base station applications with frequencies from 7 to 1 MHz. Can be used
More informationRF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed primarily for CW large--signal output and driver applications with frequencies up to 450 MHz. Devices
More informationRF LDMOS Wideband Integrated Power Amplifier
Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifier The MMRF2004NB wideband integrated circuit is designed with on--chip matching that makes it usable from 2300 to 2700
More informationRF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET
Technical Data RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET Designed primarily for pulsed wideband applications with frequencies up to 235 MHz. Device is unmatched and is
More informationHeterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier
Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier The is a general purpose amplifier that is internally input matched and
More informationRF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs RF power transistors designed for applications operating at frequencies from 900 to
More informationRF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed primarily for CW large--signal output and driver applications with frequencies up to 600 MHz. Devices
More informationRF LDMOS Wideband Integrated Power Amplifiers
Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MDE6IC9120N/GN wideband integrated circuit is designed with on-chip matching that makes it usable from 920 to 960 MHz. This multi-stage
More informationELECTRICAL CHARACTERISTICS continued (T C = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Emitter Base Break
SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF Sub Micron Bipolar Line Designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain and
More informationP D Storage Temperature Range T stg 65 to +150 C Operating Junction Temperature T J 200 C
SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF MOSFET Line N Channel Enhancement Mode Designed primarily for linear large signal output stages up to150 MHz frequency range. Specified 50
More informationQuiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
Application Note Rev., 1/3 NOTE: The theory in this application note is still applicable, but some of the products referenced may be discontinued. Quiescent Current Thermal Tracking Circuit in the RF Integrated
More informationRF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for W--CDMA and LTE base station applications with frequencies from 2300 to 2620 MHz. Can be used
More informationRF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs
Freescale Semiconductor Technical Data RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs These RF power transistors are designed for applications operating at frequencies between
More informationCharacteristic Symbol Value (2,3) Unit. Test Methodology
Freescale Semiconductor Technical Data Document Number: MW7IC2750N Rev. 4, 10/2011 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2750N wideband integrated circuit is designed with on--chip matching
More informationLow Voltage 1:18 Clock Distribution Chip
Freescale Semiconductor Technical Data Low Voltage 1:18 Clock Distribution Chip The is a 1:18 low voltage clock distribution chip with 2.5 V or 3.3 V LVCMOS output capabilities. The device features the
More informationRF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
Technical Data RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies to 5 MHz. The high gain and broadband
More informationRating Symbol Value Unit Drain Source Voltage VDSS 65 Vdc Gate Source Voltage VGS ±20 Vdc Total Device TC = 25 C Derate above 25 C
SEMICONDUCTOR TECHNICAL DATA Order this document from WISD RF Marketing The RF Sub Micron MOSFET Line N Channel Enhancement Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies
More information