Characteristic Symbol Value Unit Thermal Resistance, Junction-to-Case R θjc 6 C/W

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1 Technical Data Silicon Lateral FET, N-Channel Enhancement-Mode MOSFET Designed for use in medium voltage, moderate power amplifiers such as portable analog and digital cellular radios and PC RF modems. Typical CW RF 849 MHz: V DD = 12.5 Volts, I DQ = 300 ma, P out = 38 dbm Power Gain 10.5 db Drain Efficiency 55% Capable of Handling 10: Vdc, 849 MHz, 38 dbm RoHS Compliant In Tape and Reel. T1 Suffix = 1,000 Units per 12 mm, 7 inch Reel Document Number: Rev. 1, 7/ MHz, 38 dbm, 12.5 V HIGH FREQUENCY POWER TRANSISTOR LDMOS FET Table 1. Maximum Ratings Rating Symbol Value Unit Drain-Source Voltage V DSS 17 Vdc Drain-Gate Voltage (R GS = 1.0 MΩ) V DGO 17 Vdc Gate-Source Voltage V GS 4.0 Vdc Drain Current - Continuous I D 1.5 Adc Total Device T C = 85 C P D 10.5 W Storage Temperature Range T stg -65 to 150 C Operating Junction Temperature T J 150 C Table 2. Thermal Characteristics Characteristic Symbol Value Unit Thermal Resistance, Junction-to-Case R θjc 6 C/W Table 3. Moisture Sensitivity Level Test Methodology Rating Package Peak Temperature Unit Per JESD 22-A113, IPC/JEDEC J-STD C 1 3 CASE , STYLE 1 PLD NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed., Inc., 2006, All rights reserved. 1

2 Table 4. Electrical Characteristics (T C = 25 C, unless otherwise noted) Characteristic Symbol Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage (V GS = 0, I D = 100 nadc) V (BR)DSS 45 Vdc Drain-Source Leakage Current (V DS = 12.5 Vdc, V GS = 0) I DSS 100 nadc Gate-Source Leakage Current (V GS = 5 Vdc, V DS = 0) I GSS 100 nadc On Characteristics Gate Threshold Voltage V GS 2.4 Vdc Resistance Drain-Source (V GS = 5 Vdc, I D = 300 ma) R DS(on) Ω Dynamic Characteristics Input Capacitance (V DS = 12.5 Vdc, V GS = 0, f = 1.0 MHz) C iss pf Output Capacitance (V DS = 12.5 Vdc, V GS = 0, f = 1.0 MHz) C oss 15.6 pf Feedback Capacitance (V DS = 12.5 Vdc, V GS = 0, f = 1.0 MHz) C rss 0.82 pf Typical Characteristics Power Gain (V DD = 12.5 Vdc,, f = 849 MHz) G ps 10.5 db Drain Efficiency (V DD = 12.5 Vdc,, f = 849 MHz) η D 55 % Output Power P out 38 dbm 2

3 OUTPUT POWER (dbm) OUTPUT POWER (dbm) V V V T A = 25 C Figure 1. Output Power versus Frequency Figure 3. Output Power versus Frequency TYPICAL CHARACTERISTICS 70 EFFICIENCY (%) I DQ, QUIESCENT CURRENT (ma) V V V -35 C C 25 C 85 C V DD = 12.5 V T A = 25 C Figure 2. Efficiency versus Frequency 25 C -35 C V DD = 12.5 V Figure 4. Quiescent Current versus Frequency 3

Z source f = 849 MHz Z o = 5 Ω f MHz Z source = Z source Ω Z load f = 849 MHz V DD = 12.5 Vdc, I DQ = 300 ma, P out = 38 dbm Z load Ω 849 2.5 + j0.5 2.5 - j2.

4 Z source f = 849 MHz Z o = 5 Ω f MHz Z source = Z source Ω Z load f = 849 MHz V DD = 12.5 Vdc, I DQ = 300 ma, P out = 38 dbm Z load Ω j j2.5 Test circuit impedance as measured from gate to ground. Z load = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 5. Series Equivalent Source and Load Impedance 4

5 PACKAGE DIMENSIONS R S B 4 K D 2 PL L A Q J 8 PL P É N M DRAFT 4 PL C E G H T ÉÉ W 8 PL ÉÉÉ ÉÉÉ Z Y X RESIN BLEED/FLASH ALLOWABLE CASE ISSUE A AA ZONE U ZONE V F 2 PL NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, CONTROLLING DIMENSION: INCH. INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D E F G H J K L M 5 REF 5 REF N 1.75 REF 4.44 REF P Q R S T U V W X Y Z AA STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE 4. SOURCE 5

6 The following table summarizes revisions to this document. REVISION HISTORY Revision Date Description 1 Dec Data sheet archived. Part no longer manufactured. 6

7 How to Reach Us: Home Page: USA/Europe or Locations Not Listed: Technical Information Center, CH N. Alma School Road Chandler, Arizona or Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen Muenchen, Germany (English) (English) (German) (French) support@freescale.com Japan: Japan Ltd. Headquarters ARCO Tower 15F 1-8-1, Shimo-Meguro, Meguro-ku, Tokyo Japan or support.japan@freescale.com Asia/Pacific: Hong Kong Ltd. Technical Information Center 2 Dai King Street Tai Po Industrial Estate Tai Po, N.T., Hong Kong support.asia@freescale.com For Literature Requests Only: Literature Distribution Center P.O. Box 5405 Denver, Colorado or Fax: LDCForFreescaleSemiconductor@hibbertgroup.com Information in this document is provided solely to enable system and software implementers to use products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. reserves the right to make changes without further notice to any products herein. makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters that may be provided in data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals, must be validated for each customer application by customer's technical experts. does not convey any license under its patent rights nor the rights of others. products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the product could create a situation where personal injury or death may occur. Should Buyer purchase or use products for any such unintended or unauthorized application, Buyer shall indemnify and hold and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescale and the Freescale logo are trademarks of, Inc. All other product or service names are the property of their respective owners., Inc. 2006, 2009 All rights reserved. RF Document Device Number: Data Freescale Rev. 1, 7/2006 Semiconductor 7

ARCHIVE INFORMATION. Cellular Band RF Linear LDMOS Amplifier MHL9318. Freescale Semiconductor. Technical Data MHL9318. Rev.

ARCHIVE INFORMATION. Cellular Band RF Linear LDMOS Amplifier MHL9318. Freescale Semiconductor. Technical Data MHL9318. Rev. Technical Data Rev. 3, 1/2005 Replaced by N. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead-free terminations. Cellular