RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
|
|
- Amos Harrison
- 5 years ago
- Views:
Transcription
1 Technical Data Reference Design Library Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Device Characteristics (From Device Data Sheet) Designed for broadband commercial and industrial applications at frequencies up to 1 MHz. The high gain and broadband performance of these devices makes them ideal for large- signal, common- source amplifier applications in 26 volt base station equipment. Typical Two- Tone Performance at 94 MHz, 26 Volts Output Power 6 Watts PEP Power Gain 17 db Efficiency 4% IMD -31 dbc Integrated ESD Protection Designed for Maximum Gain and Insertion Phase Flatness Capable of Handling 1:1 26 Vdc, 94 MHz, 6 Watts CW Output Power Excellent Thermal Stability Characterized with Series Equivalent Large- Signal Impedance Parameters Low Gold Plating Thickness on Leads. L Suffix Indicates 4µ Nominal. Available at Go to Support/ Reference Designs/Networking and Communications Rev. 2, 12/2 M96LR1 M96LSR1 Narrowband CDMA INPUT MATCH NARROWBAND CDMA MHZ V GG BIAS V DD BIAS MATCH OUTPUT M96L REFERENCE DESIGN Designed by: David Runton and John Kinney This reference design is designed to demonstrate the performance characteristics of the M96L when applied to the MHz narrowband CDMA frequency band. The reference design is tuned for performance at 6 watts average output power, V DS = 26 volts, and. REFERENCE DESIGN LIBRARY TERMS AND CONDITIONS Freescale is pleased to make this reference design available for your use in development and testing of your own product or products, without charge. The reference design contains easy- to- copy, fully functional amplifier designs. Where possible, it consists of no tune distributed element matching circuits designed to be as small as possible, includes temperature compensated bias circuitry, and is designed to be used as building blocks for our customers. HEATSINKING When operating this fixture please provide adequate heatsinking for the device. Excessive heating of the device will prevent repeating of the included measurements. NONLINEAR SIMULATION To aid the design process and help reduce time to market for our customers, Freescale provides device models for several commercially available harmonic balance simulators. Our model Library is available for all major computer platforms supported by these simulators. For details on the model library and supported harmonic balance simulators, go to the following url: Inc., 2. All rights reserved. M96LR1 M96LSR1 Narrowband CDMA 1
2 R3 V GG T1 R2 T2 R1 R + C1 C2 C3 C1 + C11 B1 V DD + + C7 C Z7 Z1 INPUT Z1 C6 Z2 Z3 R4 Z4 Z C8 C13 Z6 Z8 Z9 Z11 Z12 Z13 C12 Z14 OUTPUT C C4 C9 C14 C16 C17 Figure 1. M96L GSM EDGE and Narrowband CDMA Reference Design Schematic Table 1. M96L GSM EDGE and Narrowband CDMA Reference Design Component Designations and Values Designation Description B1 Ferrite Bead, Fair Rite # C1, C11 22 F, 3 V Tantalum Chip Capacitors, Kemet C2, C1.1 F, V Chip Capacitors (121) C3 27 pf, V Chip Capacitor (8) C4, C, C pf, V Chip Capacitors, ACCU-P (8) C, C7 1. F, 3 V Tantalum Chip Capacitors, Kemet C6, C12 47 pf, V Chip Capacitors, ACCU-P (8) C8, C9 12 pf, V Chip Capacitors, ACCU-P (8) C13, C14 1 pf, V Chip Capacitors, ACCU-P (8) C pf Variable Capacitor, Gigatrim R1, R3 2.7 k Chip Resistors (8) R2. k Trimpot R4 1 Chip Resistor (8) R 3.3 k Chip Resistor (8) T1 Voltage Regulator, Micro-8, #LP291 T2 PNP Bipolar Transistor, SOT-23, #BC87 Z1 1. x 26. mm Microstrip Z2 1.8 x 8.1 mm Microstrip Z3 1.8 x 2.4 mm Microstrip Z4 7. x 2. mm Microstrip Z 7. x 9.6 mm Microstrip Z6 7. x 3. mm Microstrip Z7 1.1 x 3.4 mm Microstrip Z8 7. x 3. mm Microstrip Z9 7. x 8.7 mm Microstrip Z1 1.1 x 39.8 mm Microstrip Z x. mm Microstrip Z x 3.2 mm Microstrip Z x 4.3 mm Microstrip Z14 1. x 27.6 mm Microstrip Bedstead Copper Heatsink Raw PCB.2 Taconic -3, 6 x 11 mm, n = 3. M96LR1 M96LSR1 Narrowband CDMA 2
3 C1 R C2 C3 R1 T2 R3 C R2 T1 C7 V GG V DD B1 C1 C11 C6 C R4 C4 C8 C9 C13 C14 C16 C17 C12 M96 Rev. RD2 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. M96L GSM EDGE and Narrowband CDMA Reference Design PC Board Layout Diagram M96LR1 M96LSR1 Narrowband CDMA 3
4 CHARACTERISTICS, POWER GAIN (db) IRL IMD P out = 6 W (PEP) f2 = f1 + 1 khz f, FREQUENCY (MHz) IRL, INPUT RETURN LOSS (db) IMD, INTERMODULATION DISTORTION (dbc) IMD, INTERMODULATION DISTORTION (dbc) I DQ = 4 ma 8 ma ma 7 ma f1 = 88 MHz 6 ma f2 = 88.1 MHz P out, OUTPUT POWER (WATTS) PEP Figure 3. Class AB Broadband Circuit Performance Figure 4. Intermodulation Distortion versus Output Power ps, POWER GAIN (db) G P out, OUTPUT POWER (WATTS) CW f = 88 MHz IMD, INTERMODULATION DISTORTION (dbc) f1 = 88 MHz f2 = f1 + OFFSET 1 khz 1 khz 6 Offset = 1 khz khz P out, OUTPUT POWER (WATTS) PEP Figure. Power Gain, Efficiency versus Output Power Figure 6. Intermodulation Distortion versus Output Power ps, POWER GAIN (db) G P in, INPUT POWER (WATTS) CW f = 88 MHz P out Pout, OUTPUT POWER (WATTS), POWER GAIN (db) ma 7 ma 6 ma ma ma.7 f1 = 88 MHz f2 = 88.1 MHz P out, OUTPUT POWER (WATTS) PEP Figure 7. Power Gain, Efficiency, Output Power versus Input Power Figure 8. Power Gain versus Output Power M96LR1 M96LSR1 Narrowband CDMA 4
5 f = 88 MHz EVM 1 EVM Source EVM P out, OUTPUT POWER (dbm) Figure 9. Drain Efficiency and Error Vector Magnitude versus Output Power EVM, ERROR VECTOR MAGNITUDE (%) ACPR, ADJACENT CHANNEL POWER RATIO (db) f = 88 MHz IS 9, Pilot, Sync, Paging Traffic Codes 8 through 13 7 khz MHz P out, OUTPUT POWER (WATTS) AVG. Figure 1. Power Gain, Efficiency and ACPR versus Output Power , POWER GAIN (db) MHz Channel BW 64 db 1.98 MHz BW Center 88 MHz 4 db 7 khz BW 4 db +7 khz BW 64 db MHz BW,, P out (Avg.) =.6 W Efficiency = 26.%, Gain = 16. db IS 9 CDMA 1.23 MHz Channel Bandwidth 7 khz: 4. 3 khz Bandwidth 1.98 MHz: khz Bandwidth Span MHz Figure 11. Single Carrier CDMA Spectrum M96LR1 M96LSR1 Narrowband CDMA
6 How to Reach Us: Home Page: USA/Europe or Locations Not Listed: Technical Information Center, CH37 13 N. Alma School Road Chandler, Arizona or Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen Muenchen, Germany (English) (English) (German) (French) support@freescale.com Japan: Japan Ltd. Headquarters ARCO Tower F 1-8-1, Shimo-Meguro, Meguro-ku, Tokyo 3-64 Japan or support.japan@freescale.com Asia/Pacific: Hong Kong Ltd. Technical Information Center 2 Dai King Street Tai Po Industrial Estate Tai Po, N.T., Hong Kong support.asia@freescale.com For Literature Requests Only: Literature Distribution Center P.O. Box 4 Denver, Colorado or Fax: LDCForFreescaleSemiconductor@hibbertgroup.com Information in this document is provided solely to enable system and software implementers to use products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. reserves the right to make changes without further notice to any products herein. makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters that may be provided in data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals, must be validated for each customer application by customer s technical experts. does not convey any license under its patent rights nor the rights of others. products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the product could create a situation where personal injury or death may occur. Should Buyer purchase or use products for any such unintended or unauthorized application, Buyer shall indemnify and hold and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescale and the Freescale logo are trademarks of, Inc. All other product or service names are the property of their respective owners., Inc. 2. All rights reserved. M96LR1 M96LSR1 Narrowband CDMA Rev. 2, 12/2 6
RF LDMOS Wideband 2-Stage Power Amplifiers
Technical Data RF LDMOS Wideband 2-Stage Power Amplifiers Designed for broadband commercial and industrial applications with frequencies from 132 MHz to 960 MHz. The high gain and broadband performance
More informationGallium Arsenide PHEMT RF Power Field Effect Transistor
Technical Data Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL base station applications with frequencies from 3400 to 3600 MHz. Suitable for TDMA and CDMA amplifier applications.
More informationCharacteristic Symbol Value Unit Thermal Resistance, Junction to Case. Test Conditions
Technical Data Document Number: Rev. 5, 5/2006 RF LDMOS Wideband Integrated Power Amplifier The wideband integrated circuit is designed for base station applications. It uses Freescale s newest High Voltage
More informationARCHIVE INFORMATION. PCS Band RF Linear LDMOS Amplifier MHL Freescale Semiconductor. Technical Data MHL Rev. 4, 1/2005
Technical Data Rev. 4, 1/25 Replaced by N. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead-free terminations. PCS Band
More informationARCHIVE INFORMATION. Cellular Band RF Linear LDMOS Amplifier MHL9318. Freescale Semiconductor. Technical Data MHL9318. Rev.
Technical Data Rev. 3, 1/2005 Replaced by N. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead-free terminations. Cellular
More informationARCHIVE INFORMATION. Cellular Band RF Linear LDMOS Amplifier MHL9838. Freescale Semiconductor. Technical Data MHL9838. Rev.
Technical Data Rev. 4, 1/2005 Replaced by N. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead-free terminations. Cellular
More informationRF Power Field Effect Transistor Array N-Channel Enhancement-Mode Lateral MOSFET
Technical Data Document Number: Rev. 6, 7/2005 Will be replaced by MRF9002NR2 in Q305. N suffix indicates 260 C reflow capable. The PFP-16 package has had lead-free terminations from its initial release.
More information921 MHz-960 MHz SiFET RF Integrated Power Amplifier
Technical Data 9 MHz-96 MHz SiFET RF Integrated Power Amplifier The MHVIC9HNR integrated circuit is designed for GSM base stations, uses Freescale s newest High Voltage (6 Volts) LDMOS IC technology, and
More informationARCHIVE INFORMATION. Cellular Band RF Linear LDMOS Amplifier MHL9236MN. Freescale Semiconductor. Technical Data
Technical Data Cellular Band RF Linear LDMOS Amplifier Designed for ultra- linear amplifier applications in ohm systems operating in the cellular frequency band. A silicon FET Class A design provides outstanding
More informationARCHIVE INFORMATION MW4IC2230MBR1 MW4IC2230GMBR1. Freescale Semiconductor. Technical Data. Document Number: MW4IC2230 Rev.
Technical Data Replaced by MW4IC2230NBR1(GNBR1). There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead- free terminations.
More informationHeterojunction Bipolar Transistor (InGaP HBT) Broadband High Linearity Amplifier
Technical Data Heterojunction Bipolar Transistor (InGaP HBT) Broadband High Linearity Amplifier The is a General Purpose Amplifier that is internally input and output matched. It is designed for a broad
More informationHeterostructure Field Effect Transistor (GaAs HFET) Broadband High Linearity Amplifier
Technical Data Heterostructure Field Effect Transistor (GaAs HFET) Broadband High Linearity Amplifier The is a General Purpose Amplifier that is internally input and output prematched. It is designed for
More informationRF LDMOS Wideband Integrated Power Amplifiers
Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2230N wideband integrated circuit is designed for W-CDMA base station applications. It uses Freescale s newest High Voltage (26 to
More informationLIFETIME BUY LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09. RF Power Field-Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF374A
Technical Data Document Number: Rev. 5, 5/26 LIFETIME BUY RF Power Field-Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies
More informationCharacteristic Symbol Value Unit Thermal Resistance, Junction-to-Case R θjc 6 C/W
Technical Data Silicon Lateral FET, N-Channel Enhancement-Mode MOSFET Designed for use in medium voltage, moderate power amplifiers such as portable analog and digital cellular radios and PC RF modems.
More informationRF LDMOS Wideband Integrated Power Amplifiers
Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MW4IC00 wideband integrated circuit is designed for use as a distortion signature device in analog predistortion systems. It uses Freescale
More informationWatts W/ C Storage Temperature Range T stg 65 to +150 C Operating Junction Temperature T J 200 C. Test Conditions MRF9085SR3/MRF9085LSR3
SEMICONDUCTOR TECHNICAL DATA Order this document by MRF9085/D The RF Sub Micron MOSFET Line N Channel Enhancement Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with
More informationQuiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
Application Note Rev., 1/3 NOTE: The theory in this application note is still applicable, but some of the products referenced may be discontinued. Quiescent Current Thermal Tracking Circuit in the RF Integrated
More informationLIFETIME BUY LAST ORDER 1 JUL 11 LAST SHIP 30 JUN MHz -960 MHz SiFET RF Integrated Power Amplifier MHVIC910HNR2. Freescale Semiconductor
LIFETIME BUY Technical Data 9 MHz -96 MHz SiFET RF Integrated Power Amplifier The MHVIC9HNR integrated circuit is designed for GSM base stations, uses Freescale s newest High Voltage (6 Volts) LDMOS IC
More informationRF LDMOS Wideband 2-Stage Power Amplifiers
Technical Data RF LDMOS Wideband 2-Stage Power Amplifiers Designed for broadband commercial and industrial applications with frequencies from 132 MHz to 960 MHz. The high gain and broadband performance
More informationRF LDMOS Wideband Integrated Power Amplifier MHVIC2115R2. Freescale Semiconductor, I. The Wideband IC Line SEMICONDUCTOR TECHNICAL DATA
MOTOROLA nc. SEMICONDUCTOR TECHNICAL DATA Order this document by /D The Wideband IC Line RF LDMOS Wideband Integrated Power Amplifier The wideband integrated circuit is designed for base station applications.
More informationWatts W/ C Storage Temperature Range T stg 65 to +200 C Operating Junction Temperature T J 200 C. Test Conditions
SEMICONDUCTOR TECHNICAL DATA Order this document by MRF19125/D The RF Sub Micron MOSFET Line N Channel Enhancement Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies
More informationRF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed primarily for large--signal output applications at 2450 MHz. Devices are suitable
More informationCMOS Micro-Power Comparator plus Voltage Follower
Freescale Semiconductor Technical Data Rev 2, 05/2005 CMOS Micro-Power Comparator plus Voltage Follower The is an analog building block consisting of a very-high input impedance comparator. The voltage
More informationWatts W/ C Storage Temperature Range T stg 65 to +150 C Operating Junction Temperature T J 200 C. Test Conditions
SEMICONDUCTOR TECHNICAL DATA Order this document by MRF21125/D The RF Sub Micron MOSFET Line N Channel Enhancement Mode Lateral MOSFETs Designed for W CDMA base station applications with frequencies from
More informationARCHIVE INFORMATION. RF Power Field Effect Transistor N- Channel Enhancement- Mode Lateral MOSFET MRF21120R6. Freescale Semiconductor.
Technical Data RF Power Field Effect Transistor N- Channel Enhancement- Mode Lateral MOSFET Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA,
More informationRF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
Technical Data RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz The high gain and
More informationLow Voltage 1:18 Clock Distribution Chip
Freescale Semiconductor Technical Data Low Voltage 1:18 Clock Distribution Chip The is a 1:18 low voltage clock distribution chip with 2.5 V or 3.3 V LVCMOS output capabilities. The device features the
More informationELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS (1) Drain Source Breakdown V
SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF MOSFET Line N Channel Enhancement Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 800
More informationP D Storage Temperature Range T stg - 65 to +175 C Operating Junction Temperature T J 200 C
Technical Data Document Number: MRF6S186 Rev. 2, 5/26 Replaced by MRF6S186NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition
More informationHeterojunction Bipolar Transistor (InGaP HBT) Broadband High Linearity Amplifier
Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor (InGaP HBT) Broadband High Linearity Amplifier The is a general purpose amplifier that is internally input and output matched. It
More informationRF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz The high gain and
More informationRF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs RF Power transistors designed for applications operating at 10 MHz. These devices are suitable for use in pulsed
More informationRF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
Technical Data RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed primarily for large- signal output applications at 2450 MHz. Device is suitable for use in industrial,
More informationCharacteristic Symbol Value (1,2) Unit Thermal Resistance, Junction to Case Case Temperature 80 C, 20 W CW
Technical Data Document Number: MRF5S9100 Rev. 4, 5/2006 Replaced by MRF5S9100NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate
More informationHeterojunction Bipolar Transistor (InGaP HBT) Broadband High Linearity Amplifier
Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor (InGaP HBT) Broadband High Linearity Amplifier The is a general purpose amplifier that is internally input and output matched. It
More informationARCHIVE INFORMATION. RF Power Field-Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF377 MRF377R3 MRF377R5. Freescale Semiconductor
Technical Data Document Number: MRF377 Rev. 1, 12/2004 RF Power Field-Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies
More informationRF Power Field Effect Transistors N- Channel Enhancement- Mode Lateral MOSFETs
Technical Data RF Power Field Effect Transistors N- Channel Enhancement- Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 18 to 2 MHz. Suitable for TDMA,
More informationTable 5. Electrical Characteristics (T A = 25 C unless otherwise noted)
Technical Data RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies up to 00 MHz The high gain and broadband
More informationQuiescent Current Control for the RF Integrated Circuit Device Family
Application Note Rev., 5/ Quiescent Current Control for the RF Integrated Circuit Device Family By: James Seto INTRODUCTION This application note introduces a bias control circuit that can be used with
More informationRF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for W--CDMA and LTE base station applications with frequencies from 211 to 217 MHz. Can be used in
More informationRF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed primarily for CW large-signal output and driver applications at 2450 MHz. Devices are suitable for use
More informationRF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs RF Power transistors designed for CW and pulsed applications operating at 1300 MHz. These devices are suitable
More information2 Receiver Tests Packet Error Rate (PER), Reported Energy Value, and Clear Channel Assessment (CCA) are used to assess and characterize the receiver.
Freescale Semiconductor Application Note Document Number: AN2985 Rev. 1.1, 08/2005 MC1319x Physical Layer Lab Test Description By: R. Rodriguez 1 Introduction The MC1319x device is a ZigBee and IEEE 802.15.4
More informationFigure 1. MRF6S27015NR1(GNR1) Test Circuit Schematic
Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2000 to 2700 MHz. Suitable for WiMAX, WiBro,
More informationELECTRICAL CHARACTERISTICS continued (T C = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Emitter Base Break
SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF Sub Micron Bipolar Line Designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain and
More informationRF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies from 211 to 217 MHz. Can be used in Class
More informationRF Power Field Effect Transistor N- Channel Enhancement- Mode Lateral MOSFET
Technical Data RF Power Field Effect Transistor N- Channel Enhancement- Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 2600 to 2700 MHz Suitable for WiMAX, WiBro
More informationELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown
SEMICONDUCTOR TECHNICAL DATA Order this document by MRF20060R/D The RF Sub Micron Bipolar Line The MRF20060R and MRF20060RS are designed for class AB broadband commercial and industrial applications at
More informationUsing a Pulse Width Modulated Output with Semiconductor Pressure Sensors
Freescale Semiconductor Application Note Rev 2, 05/2005 Using a Pulse Width Modulated Output with Semiconductor Pressure by: Eric Jacobsen and Jeff Baum Sensor Design and Applications Group, Phoenix, AZ
More informationFigure 4. MMG15241H Driving MD7IC2250N Board Layout. Table 1. MMG15241H Driving MD7IC2250N Test Circuit Component Designations and Values
Freescale Semiconductor Technical Data RF Power Reference Design RF Power Amplifier Lineup GaAs E--pHEMT Driving RF LDMOS Amplifier Lineup Characteristics This reference design provides a prepared high-gain
More informationRF LDMOS Wideband Integrated Power Amplifiers
Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MWE6IC9N wideband integrated circuit is designed with on-chip matching that makes it usable from 869 to 96 MHz. This multi-stage structure
More informationRF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
Technical Data RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for Class A or Class AB base station applications with frequencies up to 2000 MHz. Suitable for analog
More informationRF Power Field Effect Transistors N- Channel Enhancement- Mode Lateral MOSFETs
Technical Data RF Power Field Effect Transistors N- Channel Enhancement- Mode Lateral MOSFETs Designed primarily for CW large-signal output and driver applications with frequencies up to 600 MHz. Devices
More informationRF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
Technical Data RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed primarily for pulsed wideband applications with frequencies up to 150 MHz. Device is unmatched and is
More informationLow-Pressure Sensing Using MPX2010 Series Pressure Sensors
Freescale Semiconductor Application Note Rev 1, 05/2005 Low-Pressure Sensing Using MPX2010 Series Pressure by: Memo Romero and Raul Figueroa Sensor Products Division Systems and Applications Engineering
More informationUsing the Break Controller (BC) etpu Function Covers the MCF523x, MPC5500, and all etpu-equipped Devices
Freescale Semiconductor Application Note Document Number: AN2845 Rev. 0, 04/2005 Using the Break Controller (BC) etpu Function Covers the MCF523x, MPC5500, and all etpu-equipped Devices by: Milan Brejl
More informationRF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
Technical Data RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain
More informationLow-Power CMOS Ionization Smoke Detector IC
Freescale Semiconductor Technical Data Rev 4, 05/2005 Low-Power CMOS Ionization Smoke Detector IC The, when used with an ionization chamber and a small number of external components, will detect smoke.
More informationpath loss, multi-path, fading, and polarization loss. The transmission characteristics of the devices such as carrier frequencies, channel bandwidth,
Freescale Semiconductor Application Note Document Number: AN2935 Rev. 1.2, 07/2005 MC1319x Coexistence By: R. Rodriguez 1 Introduction The MC1319x device is a ZigBee and IEEE 802.15.4 Standard compliant
More informationARCHIVE INFORMATION. RF Power Field -Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET MRF372R3 MRF372R5. Freescale Semiconductor
Technical Data Document Number: MRF372 Rev. 9, 5/2006 RF Power Field -Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies
More informationRF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 1.8 and 600 MHz. These devices
More informationCharacteristic Symbol Value (1,2) Unit. Test Methodology. Human Body Model (per JESD22--A114) Machine Model (per EIA/JESD22--A115)
Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1805 to 1880 MHz. Can be used
More informationV GS(th) Vdc. V GS(Q) 2.6 Vdc. V GG(Q) Vdc. V DS(on) Vdc
Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for CDMA and multicarrier base station applications with frequencies from
More informationRF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET
Technical Data RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and
More informationRF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for WiMAX base station applications with frequencies up to 2700 MHz. Suitable for WiMAX, WiBro, BWA,
More informationImplementing PFC Average Current Mode Control using the MC9S12E128 Addendum to Reference Design Manual DRM064
Freescale Semiconductor Application Note AN3052 Rev. 0, 11/2005 Implementing PFC Average Current Mode Control using the MC9S12E128 Addendum to Reference Design Manual DRM064 by: Pavel Grasblum Freescale
More informationRF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for W--CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA
More informationP D Storage Temperature Range T stg 65 to +150 C. Characteristic Symbol Max Unit Thermal Resistance, Junction to Case R θjc 1.
SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF Line Designed for 24 Volt UHF large signal, common emitter, class AB linear amplifier applications in industrial and commercial FM/AM equipment
More informationRF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed primarily for CW large--signal output and driver applications with frequencies up to 600 MHz. Devices
More informationRF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for W--CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz. Can be used
More informationHeterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier
Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier The is a general purpose amplifier that is internally input matched and
More informationRF LDMOS Wideband Integrated Power Amplifiers. Freescale Semiconductor, I MW5IC2030MBR1 MW5IC2030GMBR1. The Wideband IC Line
MOTOROLA nc. SEMICONDUCTOR TECHNICAL DATA Order this document by MW5IC23M/D The Wideband IC Line RF LDMOS Wideband Integrated Power Amplifiers The MW5IC23 wideband integrated circuit is designed for base
More informationRF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET
Freescale Semiconductor Technical Data RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 865 to 96 MHz. Can
More informationWatts W/ C Storage Temperature Range Tstg 65 to +150 C Operating Junction Temperature TJ 200 C
SEMICONDUCTOR TECHNICAL DATA Order this document by MRF184/D The RF MOSFET Line N Channel Enhancement Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies to
More informationELECTRICAL CHARACTERISTICS continued (T C = 25 C unless otherwise noted) ON CHARACTERISTICS Gate Threshold Voltage (V DS = 10 Vdc, I D = 100 µa) Chara
SEMICONDUCTOR TECHNICAL DATA Order this document by MRF182/D The RF MOSFET Line N Channel Enhancement Mode Lateral MOSFETs High Gain, Rugged Device Broadband Performance from HF to 1 GHz Bottom Side Source
More informationRF Power Field Effect Transistor N- Channel Enhancement- Mode Lateral MOSFET
Technical Data RF Power Field Effect Transistor N- Channel Enhancement- Mode Lateral MOSFET Designed primarily for wideband applications with frequencies up to 0 MHz. Device is unmatched and is suitable
More informationRF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET
Technical Data RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET RF Power transistor designed for applications operating at frequencies between 960 and 400 MHz, % to 20% duty
More informationPD Storage Temperature Range Tstg 65 to +200 C Operating Junction Temperature TJ 200 C
SEMICONDUCTOR TECHNICAL DATA Order this document by MRF187/D Product Is Not Recommended for New Design. The next generation of higher performance products are in development. Visit our online Selector
More informationFreescale Semiconductor, I
nc. SEMICONDUCTOR TECHNICAL DATA Order this document by MRF282/D The RF Sub Micron MOSFET Line N Channel Enhancement Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications
More informationRF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET
Freescale Semiconductor Technical Data RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET RF power transistor suitable for industrial heating applications operating at 2450 MHz. Device
More informationFreescale Semiconductor, I
nc. SEMICONDUCTOR APPLICATION NOTE Order this document by AN1670/D Prepared by: Jean Jacques Bouny Principal Staff Engineer Motorola Semiconductors S.A. Toulouse, France INTRODUCTION This application note
More informationRF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier
More informationRating Symbol Value Unit Drain Source Voltage V DSS 65 Vdc Gate Source Voltage V GS ±20 Vdc Total Device T C = 25 C Derate above 25 C
SEMICONDUCTOR TECHNICAL DATA Order this document by MRF284/D The RF Sub Micron MOSFET Line N Channel Enhancement Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from
More informationRF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET
Freescale Semiconductor Technical Data RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET Designed for Class A or Class AB power amplifier applications with frequencies up to 2000 MHz.
More informationFreescale Semiconductor, I
nc. SEMICONDUCTOR APPLICATION NOTE Order this document by AN955/D Prepared by: Ken Dufour Motorola Power Products Division INTRODUCTION This application note describes a two stage, 30 watt VHF amplifier
More informationP D Storage Temperature Range T stg - 65 to +150 C Operating Junction Temperature T J 150 C
Technical Data Document Number: MRF1511 Rev., 5/ Replaced by MRF1511NT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead-free
More information0.7 A 6.8 V Dual H-Bridge Motor Driver
Freescale Semiconductor Advance Information 0.7 A 6.8 V Dual H-Bridge Motor Driver The is a monolithic dual H-Bridge power IC ideal for portable electronic applications containing bipolar stepper motors
More informationCharacteristic Symbol Value (2,3) Unit
LIFETIME BUY Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for W--CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable
More informationEB W (PEP) AMATEUR RADIO LINEAR AMPLIFIER
MOTOROLA Order this document by EB63/D SEMICONDUCTOR ENGINEERING BULLETIN EB63 140 W (PEP) AMATEUR RADIO LINEAR AMPLIFIER 2 30 MHz The popularity of 2 30 MHz, SSB, Solid State, linear amplifiers is increasing
More informationARCHIVE INFORMATION. RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs MRF6P3300HR3 MRF6P3300HR5. Freescale Semiconductor
Technical Data Document Number: MRF6P3300H Rev. 2, /08 MRF6P3300HR3/HR replaced by MRFE6P3300HR3/HR. Refer to Device Migration PCN1289 for more details. RF Power Field Effect Transistor N-Channel Enhancement-Mode
More informationRF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog
More information56F Phase AC Induction Motor V/Hz Control using Processor Expert TM Targeting Document. 56F bit Digital Signal Controllers. freescale.
56F805 -Phase AC Induction Motor V/Hz Control using Processor Expert TM Targeting Document 56F800 6-bit Digital Signal Controllers 805ACIMTD Rev. 0 08/2005 freescale.com System Outline -Phase AC Induction
More information1 Block HV2 LDMOS Device Number of fingers: 56, Periphery: 5.04 mm Frequency: 1 GHz, V DS. =26 v & I DS
Number of fingers: 56, Periphery: 5.4 mm =2. ma/mm 5 ohm Termination Output Power at Fundamental vs. 4 11 Transducer Gain vs. Output Power at Fundamental 3 1-1 Transducer Gain 1 9 7 6 - -3 - -1 1 3 4 5-3
More informationCharacteristic Symbol Min Typ Max Unit Instantaneous Bandwidth BW MHz Input Return Loss IRL 15 db
SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF Line The is a solid state class AB amplifier and is specifically designed for TV transposers and transmitters. This amplifier incorporates
More informationFlexTimer and ADC Synchronization
Freescale Semiconductor Application Note AN3731 Rev. 0, 06/2008 FlexTimer and ADC Synchronization How FlexTimer is Used to Synchronize PWM Reloading and Hardware ADC Triggering by: Eduardo Viramontes Systems
More informationELECTRICAL CHARACTERISTICS continued (T C = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (I
SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF Line The is designed for output stages in band IV and V TV transmitter amplifiers. It incorporates high value emitter ballast resistors, gold
More informationHardware Design Considerations using the MC34929
Freescale Semiconductor Application Note AN3319 Rev. 1.0, 9/2006 Hardware Design Considerations using the MC34929 By: Juan Sahagun RTAC Americas Mexico 1 Introduction This Application Note describes how
More informationCharacteristic Symbol Value (2,3) Unit
LIFETIME BUY Technical Data RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET Designed for W--CDMA base station applications with frequencies from 1805 to 1880 MHz. Suitable
More informationXGATE Library: PWM Driver Generating flexible PWM signals on GPIO pins
Freescale Semiconductor Application Note AN3225 Rev. 0, 2/2006 XGATE Library: PWM Driver Generating flexible PWM signals on GPIO pins by: Armin Winter, Field Applications, Wiesbaden Daniel Malik, MCD Applications,
More information