Freescale Semiconductor, Inc.

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1 OTOROL SEICONDUCTOR TECHNICL DT The RF OSFET Line RF Power Field Effect Transistor N-Channel Enhancement-ode Lateral OSFET Order this document by /D Designed for CD base station applications with frequencies from 1930 to 1990 Hz. Suitable for F, TD, CD and multicarrier amplifier applications. To be used in Class B for PCN- PCS/cellular radio and WLL applications. CD 1990 Hz, 26 Volts IS-97 CD Pilot, Sync, Paging, Traffic Codes Thru 13 5 khz khz BW 1.25 Hz khz BW 2.25 Hz Hz BW Output Power 15 Watts (vg.) Power Gain 11.7 db Efficiency 16% Internally atched, Controlled Q, for Ease of Use High Gain, High Efficiency, High Linearity Integrated ESD Protection Designed for aximum Gain and Insertion Phase Flatness Capable of Handling :1 26 Vdc, 1990 Hz, 120 Watts (CW) Output Power S- Parameter Characterization at High Bias Levels Excellent Thermal Stability Characterized with Series Equivalent Large- Signal Impedance Parameters XIU RTINGS Rating Symbol Value Unit Drain-Source Voltage V DSS 65 Vdc Gate-Source Voltage V GS - 0.5, 15 Vdc Total Device T C = 25 C Derate above 25 C P D Storage Temperature Range T stg - 65 to 150 C Operating Junction Temperature T J 200 C THERL CHRCTERISTICS Watts W/ C Characteristic Symbol Value Unit Thermal Resistance, Junction to Case R θjc 0.45 C/W ESD PROTECTION CHRCTERISTICS Human Body odel achine odel Test Conditions 1990 Hz, 120 W, 26 V LTERL N- CHNNEL RF POWER OSFET CSE 375D-04, STYLE 1 NI-1230 Class 1 (inimum) 3 (inimum) NOTE - CUTION - OS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging OS devices should be observed. REV otorola, OTOROL Inc RF DEVICE DT For For ore Information On On This Product, Go Go to: to: 1

2 ELECTRICL CHRCTERISTICS (T C = 25 C unless otherwise noted) Characteristic Symbol in Typ ax Unit OFF CHRCTERISTICS (1) Drain-Source Breakdown Voltage (V GS = 0 Vdc, I D = µdc) Gate-Source Leakage Current (V GS = 5 Vdc, V DS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (V DS = 26 Vdc, V GS = 0 Vdc) ON CHRCTERISTICS (1) Forward Transconductance (V DS = Vdc, I D = 2 dc) V (BR)DSS 65 Vdc I GSS 1 µdc I DSS µdc g fs 4. S Gate Threshold Voltage (V DS = V, I D = 200 µ) Gate Quiescent Voltage (V DS = 26 V, I D = 500 m) Drain-Source On-Voltage (V GS = V, I D = 2 ) DYNIC CHRCTERISTICS (1) Reverse Transfer Capacitance (V DS = 26 Vdc, V GS = 0, f = 1 Hz) FUNCTIONL TESTS (In otorola Test Fixture, 50 ohm system) (2) Common-Source mplifier Power Gain f1 = Hz, f2 = Hz) Drain Efficiency f1 = Hz, f2 = Hz) Intermodulation Distortion f1 = Hz, f2 = Hz) Input Return Loss f1 = Hz, f2 = Hz) Common-Source mplifier Power Gain f1 = Hz, f2 = Hz) Drain Efficiency f1 = Hz, f2 = Hz) Intermodulation Distortion f1 = Hz, f2 = Hz) Input Return Loss f1 = Hz, f2 = Hz) Power Output, 1 db Compression Point (V DD = 26 Vdc, CW, I DQ = m, f1 = Hz) V GS(th) Vdc V GS(Q) Vdc V DS(on) Vdc C rss 2. pf ps η % ID IRL db G ps 11.7 db η 34 % ID -31 db IRL -14 db P1dB 120 Watts db db Common-Source mplifier Power Gain (V DD = 26 Vdc, P out = 120 W CW, I DQ = m, f1 = Hz) (1) Each side of device measured separately. (2) Device measured in push-pull configuration. G ps 11 db (continued) 2 For ore Information On This Product, OTOROL RF DEVICE DT

3 ELECTRICL CHRCTERISTICS continued (T C = 25 C unless otherwise noted) Characteristic Symbol in Typ ax Unit FUNCTIONL TESTS (In otorola Test Fixture, 50 ohm system) (2) (continued) Drain Efficiency (V DD = 26 Vdc, P out = 120 W CW, I DQ = m, f1 = Hz) η 45 % Output ismatch Stress (V DD = 26 Vdc, P out = 120 W CW, I DQ = m, f = 1990 Hz, VSWR = :1, ll Phase ngles at Frequency of Tests) (2) Device measured in push-pull configuration. Ψ No Degradation In Output Power Before and fter Test OTOROL RF DEVICE DT For ore Information On This Product, 3

4 C31 C32 C33 C34 C35 V DD RF INPUT Z1 COX1 Z2 L1 COX2 V GG V GG Z4 Z5 Z6 Z7 C19 R1 Z C1 Z9 R2 B1 R3 C17 C16 Z Z12 C3 Z14 Z16 Z1 Z20 C2 C14 Z22 R4 C25 C24 C23 C21 B1, B2 Ferrite Beads, Fair Rite C1, C pf Variable Capacitors, Johanson Gigatrim C3, C4, C9, C pf Chip Capacitors, B Case, TC C5, C pf Variable Capacitors, Johanson Gigatrim C6, C7 2.0 pf Chip Capacitors, B Case, TC C 1.1 pf Chip Capacitor, B Case, TC C pf Chip Capacitor, B Case, TC C13, C20, C29, C pf Chip Capacitors, B Case, TC C14, C21, C2, C3 91 pf Chip Capacitors, B Case, TC C15, C22, C31, C40 0 µf, 50 V Electrolytic Capacitors, Sprague C16, C23, C33, C µf Chip Capacitors, B Case, TC C17, C24, C32, C41 00 pf Chip Capacitors, B Case, TC C19, C µf Chip Capacitors, B Case, TC C27, C34, C36, C42 22 µf, 35 V Tantalum Surface ount Chip Capacitors, Kemet C30, C µf, 35 V Tantalum Surface ount Chip Capacitors, Kemet C35, C µf, 63 V Electrolytic Capacitors, Sprague Coax1, Coax2 25 Ω, Semi Rigid Coax, 70 mil OD, 1.05 Long Coax3, Coax4 50 Ω, Semi Rigid Coax, 5 mil OD, 1.05 Long L1 5.0 nh, inispring Inductor, Coilcraft L2.0 nh, inispring Inductor, Coilcraft L3, L nh, icrospring Inductors, Coilcraft R1, R2 1 kω, 1/2 W Fixed etal Film Resistors, Dale R3, R4 270 Ω, 1/ W Fixed Film Chip Resistors, Dale R5, R6 1.0 kω, 1/ W Fixed Film Chip Resistors, Dale Z x 0.00 icrostrip L2 C15 R5 C13 Z11 Z13 C4 Z15 Z17 Z19 Z21 Z23 B2 R6 C22 C20 C5 C7 Z24 DUT Z25 C6 C30 C29 Z26 Z27 C37 C39 C40 L3 C2 C27 Z2 Z30 Z32 Z34 C9 Z36 L4 C C41 C42 C11 Z29 Z31 Z33 Z35 C Z37 C36 C3 Z40 C12 Z41 C43 Z42 Z3 Z39 RF OUTPUT C44 COX3 COX4 Z x 0.00 icrostrip Z4, Z x 0.00 icrostrip Z6, Z x 0.00 icrostrip Z, Z x 0.00 icrostrip Z, Z x 0.00 icrostrip Z12, Z x 0.00 icrostrip Z14, Z x 0.00 icrostrip Z16, Z x icrostrip Z1, Z x icrostrip Z20, Z x icrostrip Z22, Z x icrostrip Z24, Z x icrostrip Z26, Z x icrostrip Z2, Z x icrostrip Z30, Z x icrostrip Z32, Z x icrostrip Z34, Z x 0.00 icrostrip Z36, Z x 0.00 icrostrip Z3, Z x 0.00 icrostrip Z x 0.00 icrostrip Z x 0.00 icrostrip Z x 0.00 icrostrip Board aterial 0.03 Teflon, ε r = 2.55 Copper Clad, 2 oz. Cu Connectors N-Type Panel ount, Stripline V DD Figure GHz Broadband Test Circuit Schematic 4 For ore Information On This Product, OTOROL RF DEVICE DT

5 C34 C35 VGG C19 C17 B1 C16 C15 C13 C30 C29 C31 C2 C32 C33 C27 VDD R3 R5 C14 C7 L3 L1 C1 C2 R1 R2 C3 C9 C5 C11 L2 C C4 C R6 C6 L4 R4 C21 B2 C36 C20 C24 C37 C23 C39 C3 C22 C41 C43 VGG C40 VDD C25 C42 C44 Figure 2. Test Circuit Component Layout C12 OTOROL RF DEVICE DT For ore Information On This Product, 5

6 TYPICL CHRCTERISTICS G ps, POWER GIN (db) ID, INTERODULTION DISTORTION (dbc) G ps, POWER GIN (db) m 1500 m 1300 m 10 m 00 m 750 m 1.0 P out, OUTPUT POWER (WTTS) PEP Figure 3. Power Gain versus Output Power V DD = 26 Vdc f1 = Hz f2 = Hz 500 m 750 m P out, OUTPUT POWER (WTTS) PEP η ID 10 m P out, OUTPUT POWER (WTTS) PEP V DD = 26 Vdc f1 = Hz f2 = Hz 0 Figure 5. Intermodulation Distortion versus Output Power G ps V DD = 26 Vdc, I DQ = 2 x 500 m Two Tone, 0 khz Tone Spacing Figure 7. Power Gain, Efficiency, and ID versus Output Power ps, POWER GIN (db) G η, EFFICIENCY (%) ID, INTERODULTION DISTORTION (dbc) ID, INTERODULTION DISTORTION (dbc) Gps, POWER GIN (db) V DD = 26 Vdc I DQ = 2 x 500 m f1 = Hz f2 = Hz m 1500 m 3rd Order 1300 m V DD = 26 Vdc, I DQ = 2 x 500 m Two Tone, 0 khz Tone Spacing Output Power = 120 W PEP f, FREQUENCY (Hz) CPR 5th Order 1.0 P out, OUTPUT POWER (WTTS) PEP G ps η 2.25 Hz 7th Order 5 khz G ps P out, OUTPUT POWER (WTTS) VG Hz 0 V DD = 26 Vdc, I DQ = 2 x 750 m, f = 1990 Hz CD 9 Channels Forward, Pilot:0, Paging1, Traffic: 13, Sync: khz BW, khz BW, Hz BW η V SWR ID Figure 4. Class B Broadband Circuit Performance Figure 6. Intermodulation Distortion Products versus Output Power Figure. Power Gain, Efficiency, and CPR versus Output Power η, EFFICIENCY (%) ID, INTERODULTION DISTORTION (dbc) VSWR η, EFFICIENCY (%) CPR (db) 6 For ore Information On This Product, OTOROL RF DEVICE DT

7 Z load f = 1990 Hz f = 1990 Hz f = 1930 Hz Z source V DD = 26 V, I DQ = m, P out = 120 W PEP f Hz Z source Ω j j j1.4 Z load Ω j j j0.3 Z o = 5 Ω Z source = Test circuit impedance as measured from gate to gate, balanced configuration. Z load = Test circuit impedance as measured from drain to drain, balanced configuration. Input atching Network f = 1930 Hz Device Under Test Output atching Network Z source Z load Figure 9. Series Equivalent Input and Output Impedance OTOROL RF DEVICE DT For ore Information On This Product, 7

8 PCKGE DIENSIONS 4X K E aaa ccc 4X D T G 4 L T N (LID) B (INSULTOR) bbb T B 4 B PIN 5 T SETING PLNE 2X Q C B B (FLNGE) bbb H T B ccc T R (LID) S (INSULTOR) bbb T CSE 375D-04 ISSUE C NI-1230 B B F NOTES: 1. INTERPRET DIENSIONS ND TOLERNCES PER SE Y CONTROLLING DIENSION: INCH. 3. DIENSION H IS ESURED (0.762) WY FRO PCKGE BODY. 4. RECOENDED BOLT CENTER DIENSION OF 1.52 (3.61) BSED ON 3 SCREW. INCHES ILLIETERS DI IN X IN X B C D E F G BSC BSC H K L BSC BSC N Q R S aaa REF 0.33 REF bbb 0.0 REF 0.25 REF ccc REF 0.51 REF STYLE 1: PIN 1. DRIN 2. DRIN 3. GTE 4. GTE 5. SOURCE Information in this document is provided solely to enable system and software implementers to use otorola products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. otorola reserves the right to make changes without further notice to any products herein. otorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does otorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters that may be provided in otorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. ll operating parameters, including Typicals, must be validated for each customer application by customer s technical experts. otorola does not convey any license under its patent rights nor the rights of others. otorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the otorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use otorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold otorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that otorola was negligent regarding the design or manufacture of the part. OTOROL and the Stylized Logo are registered in the US Patent and Trademark Office. ll other product or service names are the property of their respective owners. otorola, Inc. is an Equal Opportunity/ffirmative ction Employer. otorola Inc HOW TO RECH US: US/EUROPE/LOCTIONS NOT LISTED: JPN: otorola Japan Ltd.; SPS, Technical Information Center, otorola Literature Distribution , inami-zabu, inato-ku, Tokyo 6-573, Japan P.O. Box 5405, Denver, Colorado or SI/PCIFIC: otorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong HOE PGE: OTOROL RF DEVICE DT For For ore ore Information Information On This On This Product, Product, /D Go Go to: to: