RF Power Field Effect Transistors N- Channel Enhancement- Mode Lateral MOSFETs

Transcription

1 echnical Data RF Power Field Effect ransistors N- Channel Enhancement- ode Lateral OSFEs Designed for broadband commercial and industrial applications with frequencies from 470 to 860 Hz. he high gain and broadband performance of these devices make them ideal for large- signal, common source amplifier applications in 28/32 volt transmitter equipment. ypical CW Performance at 860 Hz, 32 Volts, Narrowband Fixture Output Power 75 Watts Power Gain 18.2 db D Efficiency 60% Capable of Handling 10:1 32 Vdc, 860 Hz, 75 Watts CW Output Power Features Integrated ESD Protection Excellent hermal Stability Characterized with Series Equivalent Large-Signal G Impedance Parameters Low Gold Plating hickness on Leads. L Suffix Indicates 40μ Nominal. RoHS Compliant S In ape and Reel. R1 = 500 units per 32 mm, 13 inch Reel. Document Number: RF373 Rev. 6, 5/2006 RF373LR1 RF373LSR Hz, 75 W, 32 V LERL N- CHNNEL BRODBND RF POWER OSFEs CSE 360B-05, SYLE 1 NI- 360 RF373LR1 CSE 360C-05, SYLE 1 NI- 360S RF373LSR1 able 1. aximum Ratings Rating Symbol Value Unit Drain-Source Voltage V DSS -0.5, +70 Vdc Gate-Source Voltage V GS -0.5, +15 Vdc otal Device C = 25 C Derate above 25 C RF373LR1 RF373LSR1 P D Storage emperature Range stg -65 to +150 C Case Operating emperature C 150 C Operating Junction emperature J 200 C able 2. hermal Characteristics W W/ C W W/ C Characteristic Symbol Value Unit hermal Resistance, Junction to Case RF373LR1 RF373LSR1 R θjc C/W able 3. ESD Protection Characteristics est Conditions Class Human Body odel 1 (inimum) achine odel RF373LR1 RF373LSR1 2 (inimum) 1 (inimum), Inc., ll rights reserved. RF373LR1 RF373LSR1 1

2 able 4. Electrical Characteristics ( C = 25 C unless otherwise noted) Characteristic Symbol in yp ax Unit Off Characteristics Drain- Source Breakdown Voltage (V GS = 0 Vdc, I D =1 μ) Zero Gate Voltage Drain Current (V DS = 32 Vdc, V GS = 0 Vdc) Gate- Source Leakage Current (V GS = 5 Vdc, V DS = 0 Vdc) On Characteristics Gate hreshold Voltage (V DS = 10 V, I D = 200 μ) Gate Quiescent Voltage (V DS = 32 V, I D = 100 m) Drain- Source On- Voltage (V GS = 10 V, I D = 3 ) Dynamic Characteristics Input Capacitance (V DS = 32 V, V GS = 0, f = 1 Hz) Output Capacitance (V DS = 32 V, V GS = 0, f = 1 Hz) Reverse ransfer Capacitance (V DS = 32 V, V GS = 0, f = 1 Hz) Functional Characteristics (50 ohm system) Common Source Power Gain (V DD = 32 V, P out = 75 W CW, I DQ = 200 m, f = 860 Hz) Drain Efficiency (V DD = 32 V, P out = 75 W CW, I DQ = 200 m, f = 860 Hz) V (BR)DSS 70 Vdc I DSS 1 μdc I GSS 1 μdc V GS(th) Vdc V GS(Q) Vdc V DS(on) Vdc C iss 98.5 pf C oss 49 pf C rss 2 pf G ps db η % RF373LR1 RF373LSR1 2

3 R3 V GG C17 R2 C12 C14 C13 C16 V DD RF INPU C11 C10 C9 R1 C8 C7 CU OU RE C15 L1 C1 C5 C2 C3 C4 C6 RF OUPU RF373 Rev 01 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the signature/logo. PCBs may have either otorola or Freescale markings during the transition period. hese changes will have no impact on form, fit or function of the current product. Figure 1. RF373LR1/LSR1 Narrowband est Circuit Component Layout able 5. RF373LR1/LSR1 Narrowband est Circuit Component Layout Designations and Values Designation Description C1, C2 18 pf Chip Capacitors, C C3 12 pf Chip Capacitor, C C4 1.8 pf Chip Capacitor, C C5, C10 51 pf Chip Capacitors, C C6 0.3 pf Chip Capacitor, C (Used only on the RF373S) C7 15 pf Chip Capacitor, C C8 10 pf Chip Capacitor, C C9 2.7 pf Chip Capacitor, C C pf Chip Capacitor, C C pf Chip Capacitor, C C13 39 pf Chip Capacitor, C C14, C pf Chip Capacitors, C C F, 100 V Chip Capacitor, Vishay #VJ3640Y225KXB C17 10 F, 35 V antalum Capacitor, Kemet #491D106K35S L1 12 nh, Coilcraft #04 R1, R2 390 Ω, 1/2 Ω Chip Resistors, Vishay Dale (2010) R3 1 kω, 1/2 Ω Chip Resistor, Vishay Dale (2010) PCB rlon GX , 30 mils, ε r = 2.55 RF373LR1 RF373LSR1 3

4 YPICL CHRCERISICS G ps, POWER GIN (db) I DQ = 500 m 400 m 300 m 200 m 100 m V DD = 32 Vdc f = 860 Hz P out, OUPU POWER (WS) CW Figure 2. Power Gain versus Output Power G ps, POWER GIN (db) IRL, INPU REURN LOSS (db) V DD = 32 Vdc η P out = 75 W (CW) 25 I DQ = 200 m 60 IRL 20 G ps η, DRIN EFFICIENCY (%) f, FREQUENCY (Hz) Figure 3. Performance in Narrowband Circuit C iss, CPCINCE (pf) C oss, C iss C oss 5 C rss C rss, CPCINCE (pf) V DS, DRIN SOURCE VOLGE (VOLS) Figure 4. Capacitance versus Voltage 0 60 RF373LR1 RF373LSR1 4

5 Z o = 2 Ω Z load Z source f = 875 Hz f = 875 Hz f = 845 Hz f = 845 Hz V DD = 32 V, I DQ = 200 m, P out = 75 W CW f Hz Z source Ω j j j0.06 Z load Ω j j j0.38 Z source = est circuit impedance as measured from gate to ground. Z load = est circuit impedance as measured from drain to ground. Input atching Network Device Under est Output atching Network Z source Z load Figure 5. Series Equivalent Source and Load Impedance RF373LR1 RF373LSR1 5

6 NOES RF373LR1 RF373LSR1 6

7 PCKGE DIENSIONS B B (FLNGE) E 2X D bbb G 1 2 N (LID) (INSULOR) 3 B ccc 2X C SEING PLNE Q aaa 2X K bbb B B B H ccc R (LID) CSE 360B-05 ISSUE G NI-360 RF373LR1 S (INSULOR) aaa B B F NOES: 1. INERPRE DIENSIONS ND OLERNCES PER SE Y CONROLLING DIENSION: INCH. 3. DIENSION H IS ESURED (0.762) WY FRO PCKGE BODY. INCHES ILLIEERS DI IN X IN X B C D E F G BSC BSC H K N Q R S aaa REF 0.13 REF bbb REF 0.25 REF ccc REF 0.38 REF SYLE 1: PIN 1. DRIN 2. GE 3. SOURCE B (FLNGE) 1 B (FLNGE) PIN 3 E 2X D bbb 2 (INSULOR) bbb 2X K B N (LID) ccc C SEING PLNE B B H R (LID) ccc S (INSULOR) aaa CSE 360C-05 ISSUE E NI-360S RF373LSR1 B F B NOES: 1. INERPRE DIENSIONS ND OLERNCES PER SE Y CONROLLING DIENSION: INCH. 3. DIENSION H IS ESURED (0.762) WY FRO PCKGE BODY. INCHES ILLIEERS DI IN X IN X B C D E F H K N R S aaa REF 0.13 REF bbb REF 0.25 REF ccc REF 0.38 REF SYLE 1: PIN 1. DRIN 2. GE 3. SOURCE RF373LR1 RF373LSR1 7

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