P D Storage Temperature Range T stg - 65 to +200 C Case Operating Temperature T C 150 C Operating Junction Temperature T J 200 C

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1 echnical Data RF Power Field Effect ransistors N- Channel Enhancement- ode Lateral OSFEs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 Hz he high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications in 26 volt base station equipment ypical N-CD 880 Hz, 26 Volts, I DQ = 0 m IS-95 CD Pilot, Sync, Paging, raffic Codes 8 hrough 3 Output Power 25 Watts vg Power Gain 78 db Efficiency 25% djacent Channel Power 750 khz: khz BW Capable of Handling : 26 Vdc, 880 Hz, 35 Watts CW Output Power Features Internally atched for Ease of Use High Gain, High Efficiency and High Linearity Integrated ESD Protection Designed for aximum Gain and Insertion Phase Flatness Excellent hermal Stability Characterized with Series Equivalent Large- Signal Impedance Parameters Low Gold Plating hickness on Leads, 40μ Nominal RoHS Compliant In ape and Reel R3 Suffix = 250 Units per 32 mm, 3 inch Reel able aximum Ratings Rating Symbol Value Unit Drain-Source Voltage V DSS - 05, +65 Vdc Gate-Source Voltage V GS - 05, +5 Vdc otal Device C = 25 C Derate above 25 C Document Number: RF935L Rev 8, 5/2006 RF935LR3 RF935LSR3 880 Hz, 35 W, 26 V LERL N- CHNNEL RF POWER OSFEs CSE , SYLE NI- 780 RF935LR3 CSE , SYLE NI- 780S RF935LSR3 P D Storage emperature Range stg - 65 to +200 C Case Operating emperature C 50 C Operating Junction emperature J 200 C W W/ C able 2 hermal Characteristics Characteristic Symbol Value () Unit hermal Resistance, Junction to Case R θjc 06 C/W able 3 ESD Protection Characteristics est Conditions Class Human Body odel achine odel Charge Device odel (inimum) 2 (inimum) C7 (inimum) F calculator available at Select ools/software/pplication Software/Calculators to access the F calculators by product, Inc, 2006, 2008 ll rights reserved RF935LR3 RF935LSR3

2 able 4 Electrical Characteristics ( C = 25 C, 50 ohm system unless otherwise noted) Characteristic Symbol in yp ax Unit Off Characteristics Zero Gate Voltage Drain Leakage Current (V DS = 65 Vdc, V GS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (V DS = 26 Vdc, V GS = 0 Vdc) Gate- Source Leakage Current (V GS = 5 Vdc, V DS = 0 Vdc) On Characteristics Gate hreshold Voltage (V DS = Vdc, I D = 450 μ) I DSS μdc I DSS μdc I GSS μdc V GS(th) Vdc Gate Quiescent Voltage (V DS = 26 Vdc, I D = 0 mdc) Drain- Source On- Voltage (V GS = Vdc, I D = 3 dc) Forward ransconductance (V DS = Vdc, I D = 9 dc) Dynamic Characteristics Output Capacitance (V DS = 26 Vdc ± 30 Hz, V GS = 0 Vdc) Reverse ransfer Capacitance (V DS = 26 Vdc ± 30 Hz, V GS = 0 Vdc) V GS(Q) Vdc V DS(on) Vdc g fs 2 S C oss 9 pf C rss 44 pf Functional ests (In Freescale est Fixture, 50 ohm system) Single-Carrier N-CD, 2288 Hz Channel Bandwidth Carrier, PR = 98 00% Probability on CCDF Common- Source mplifier Power Gain (V DD = 26 Vdc, P out = 25 W vg N-CD, I DQ = 0 m, f = 8800 Hz) G ps 6 78 db Drain Efficiency (V DD = 26 Vdc, P out = 25 W vg N-CD, I DQ = 0 m, f = 8800 Hz) djacent Channel Power Ratio (V DD = 26 Vdc, P out = 25 W vg N-CD, I DQ = 0 m, f = 8800 Hz; 25 W, 23 Hz Bandwidth, 750 khz Channel Spacing) Input Return Loss (V DD = 26 Vdc, P out = 25 W vg N-CD, I DQ = 0 m, f = 8800 Hz) Common- Source mplifier Power Gain (V DD = 26 Vdc, P out = 25 W vg N-CD, I DQ = 0 m, f = 865 Hz and 895 Hz) Drain Efficiency (V DD = 26 Vdc, P out = 25 W vg N-CD, I DQ = 0 m, f = 865 Hz and 895 Hz) djacent Channel Power Ratio (V DD = 26 Vdc, P out = 25 W vg N-CD, I DQ = 0 m, f = 865 Hz and 895 Hz; 25 W, 23 Hz Bandwidth, 750 khz Channel Spacing) Input Return Loss (V DD = 26 Vdc, P out = 25 W vg N-CD, I DQ = 0 m, f = 865 Hz and 895 Hz) η % CPR dbc IRL db G ps 7 db η 24 % CPR -46 dbc IRL -25 db RF935LR3 RF935LSR3 2

3 B2 B V GG V DD C9 C8 C7 L L2 C8 C9 C20 C2 C22 C23 RF INPU Z C Z2 C5 Z3 Z4 Z5 Z6 Z7 Z8 Z9 C2 C3 C4 C6 DU Z C Z C2 C Z2 C3 Z3 Z4 Z5 Z6 Z7 Z8 Z9 C4 C5 C6 C7 RF OUPU Z 0430 x 0080 icrostrip Z 05 x 0630 icrostrip Z x 0080 icrostrip Z2 045 x 0630 icrostrip Z x 0080 icrostrip Z x 0630 x 0220 aper Z x 0220 icrostrip Z4 080 x 0220 icrostrip Z5 0 x 0220 icrostrip Z5 0 x 0220 icrostrip Z6 075 x 0220 icrostrip Z x 0220 icrostrip Z x 0220 x 0630 aper Z x 0080 icrostrip Z x 0630 icrostrip Z x 0080 icrostrip Z x 0630 icrostrip Z9 04 x 0080 icrostrip Z 0050 x 0630 icrostrip PCB rlon GX , 0030, ε r = 255 Figure 880 Hz est Circuit Schematic able Hz est Circuit Component Designations and Values Part Description Part Number anufacturer B, B2 Ferrite Beads, Short Fair Rite C, C7, C7, C8 47 pf Chip Capacitors 0B470JP 500X C C2, C Variable Capacitors, Gigatrim 2727SL Johanson C3 82 pf Chip Capacitor 0B8R2BP 500X C C4, C Variable Capacitors, Gigatrim 2729SL Johanson C5, C6 2 pf Chip Capacitors 0B20JP 500X C C8 20K pf Chip Capacitor 200B203P50X C C9, C20, C2, C22 μf, 35 V antalum Capacitors 49D6K035S Kemet C, C, C2, C3 75 pf Chip Capacitors 0B7R5JP 500X C C4 pf Chip Capacitor 0BJP 500X C C9 056 μf, 50 V Chip Capacitor C825C564K5R7800 Kemet C μf, 63 V Electrolytic Capacitor SE63VB472X25LL United Chemi- Con L, L2 25 nh Coilcraft inductors 04-5 Coilcraft WB, WB2 mil Brass Shim (0205 x 0530) RF- Design Lab RF- Design Lab RF935LR3 RF935LSR3 3

4 C23 C9 B C8 B2 C9 C20 C2 C22 C C2 L C3 C7 C4 WB C5 C6 CU OU RE C C2 C WB2 C3 C4 Figure Hz est Circuit Component Layout L2 RF935L 900 Hz Rev 02 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the signature/logo PCBs may have either otorola or Freescale markings during the transition period hese changes will have no impact on form, fit or function of the current product C8 C5 C6 C7 RF935LR3 RF935LSR3 4

5 YPICL CHRCERISICS 9 35 G ps, POWER GIN (db) INERODULION DISORION (dbc) ID, I DQ = 650 m 320 m 0 m 880 m G ps, POWER GIN (db) 8 G 30 ps 7 25 η D V DD = 26 Vdc 6 P out = 25 W (vg) 20 5 I DQ = 0 m N CD IS 95 Pilot, Sync, Paging 20 4 IRL raffic Codes 8 through CPR f, FREQUENCY (Hz) Figure 3 Class B Broadband Circuit Performance V DD = 26 Vdc f = 880 Hz, f2 = 880 Hz P out, OUPU POWER (WS) PEP Figure 4 Power Gain versus Output Power V DD = 26 Vdc I DQ = 0 m f = 880 Hz, f2 = 880 Hz 3rd Order 5th Order 7th Order P out, OUPU POWER (WS) PEP 0 Figure 6 Intermodulation Distortion Products versus Output Power G ps, POWER GIN (db) INERODULION DISORION (dbc) ID, I DQ = 880 m 650 m η D, DRIN EFFICIENCY (%) CPR (dbc) G ps V DD = 26 Vdc f = 880 Hz, f2 = 880 Hz INPU REURN LOSS (db) IRL, 320 m P out, OUPU POWER (WS) PEP 0 m Figure 5 Intermodulation Distortion versus Output Power 2 η D V DD = 26 Vdc I DQ = 0 m f = 880 Hz 0 0 P out, OUPU POWER (WS) VG Figure 7 Power Gain and Efficiency versus Output Power 60 η D, DRIN EFFICIENCY (%) RF935LR3 RF935LSR3 5

6 YPICL CHRCERISICS G ps, POWER GIN (db) G ps, POWER GIN (db) F FCOR (HOURS x PS 2 ) G ps 6 20 η D 4 V DD = 26 Vdc 0 2 I DQ = 0 m f = 880 Hz, f2 = 880 Hz ID 8 20 P out, OUPU POWER (WS) PEP 0 Figure 8 Power Gain, Efficiency and ID versus Output Power G 8 ps η D 4 V DD = 26 Vdc, I DQ = 0 m 0 f = 880 Hz 2 N CD IS 95 Pilot, Sync, Paging, 20 raffic Codes 8 through 3 CPR khz 8 L Hz P out, OUPU POWER (WS) VG Figure 9 N- CD Performance Output Power versus Gain, CPR, Efficiency η D, DRIN EFFICIENCY (%) ID, INERODULION DISORION (dbc) η D, DRIN EFFICIENCY (%) CPR, DJCEN CHNNEL POWER RIO (dbc) J, JUNCION EPERURE ( C) his above graph displays calculated F in hours x ampere 2 drain current Life tests at elevated temperatures have correlated to better than ±% of the theoretical prediction for metal failure Divide F factor by I D 2 for F in a particular application Figure F Factor versus Junction emperature 2 RF935LR3 RF935LSR3 6

7 N-CD ES SIGNL PROBBILIY (%) IS 95 CD (Pilot, Sync, Paging, raffic Codes 8 hrough 3) 2288 Hz Channel Bandwidth Carriers CPR easured in 30 khz ±750 khz Offset L easured in 30 khz ±98 Hz Offset PR = 98 00% Probability on CCDF PEK O VERGE (db) Figure Single- Carrier CCDF N- CD (db) 2288 Hz 20 Channel BW L in 30 khz +L in 30 khz Integrated BW Integrated BW CPR in 30 khz +CPR in 30 khz Integrated BW Integrated BW f, FREQUENCY (Hz) Figure 2 Single- Carrier N- CD Spectrum RF935LR3 RF935LSR3 7

8 f Hz Z o = 2 Ω Z source Ω 5 + j j j075 Z source f = 865 Hz V DD = 26 V, I DQ =0 m, P out = 25 W vg f = 895 Hz f = 865 Hz f = 895 Hz Z load Ω Z load 7 - j j j007 Z source = est circuit impedance as measured from gate to ground Z load = est circuit impedance as measured from drain to ground Input atching Network Device Under est Output atching Network Z source Z load Figure 3 Series Equivalent Source and Load Impedance RF935LR3 RF935LSR3 8

9 NOES RF935LR3 RF935LSR3 9

10 NOES RF935LR3 RF935LSR3

11 PCKGE DIENSIONS H E B B (FLNGE) 4X U (FLNGE) H B B (FLNGE) E bbb bbb G D 2 (FLNGE) D 2 (FLNGE) B 2X K B 3 3 K C 2X N (LID) ccc Q bbb (INSULOR) bbb C 4X Z (LID) N (LID) ccc SEING PLNE SEING PLNE (INSULOR) bbb B B B B B ccc aaa CSE ISSUE G NI-780 RF935LR3 ccc aaa CSE ISSUE H NI-780S RF935LSR3 R (LID) S B (INSULOR) B R (LID) B F F S (INSULOR) B NOES: DIENSIONING ND OLERNCING PER NSI Y CONROLLING DIENSION: INCH 3 DELEED 4 DIENSION H IS ESURED 0030 (0762) WY FRO PCKGE BODY INCHES ILLIEERS DI IN X IN X B C D E F G 0 BSC 2794 BSC H K N Q R S aaa 0005 REF 027 REF bbb 00 REF 0254 REF ccc 005 REF 038 REF SYLE : PIN DRIN 2 GE 3 SOURCE NOES: DIENSIONING ND OLERNCING PER NSI Y CONROLLING DIENSION: INCH 3 DELEED 4 DIENSION H IS ESURED 0030 (0762) WY FRO PCKGE BODY INCHES ILLIEERS DI IN X IN X B C D E F H K N R S U Z aaa 0005 REF 027 REF bbb 00 REF 0254 REF ccc 005 REF 038 REF SYLE : PIN DRIN 2 GE 5 SOURCE RF935LR3 RF935LSR3

12 How to Reach Us: Home Page: wwwfreescalecom E- mail: US/Europe or Locations Not Listed: echnical Information Center, CH N lma School Road Chandler, rizona or support@freescalecom Europe, iddle East, and frica: Freescale Halbleiter Deutschland GmbH echnical Information Center Schatzbogen uenchen, Germany (English) (English) (German) (French) support@freescalecom Japan: Japan Ltd Headquarters RCO ower 5F -8-, Shimo-eguro, eguro-ku, okyo Japan or supportjapan@freescalecom sia/pacific: Hong Kong Ltd echnical Information Center 2 Dai King Street ai Po Industrial Estate ai Po, N, Hong Kong supportasia@freescalecom For Literature Requests Only: Literature Distribution Center PO Box 5405 Denver, Colorado or Fax: LDCForFreescaleSemiconductor@hibbertgroupcom Information in this document is provided solely to enable system and software implementers to use products here are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document reserves the right to make changes without further notice to any products herein makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages ypical parameters that may be provided in data sheets and/or specifications can and do vary in different applications and actual performance may vary over time ll operating parameters, including ypicals, must be validated for each customer application by customer s technical experts does not convey any license under its patent rights nor the rights of others products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the product could create a situation where personal injury or death may occur Should Buyer purchase or use products for any such unintended or unauthorized application, Buyer shall indemnify and hold and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part Freescale and the Freescale logo are trademarks of, Inc ll other product or service names are the property of their respective owners, Inc 2008 ll rights reserved RF935LR3 RF935LSR3 Document Number: RF935L 2 Rev 8, 5/2006

RF Power Field Effect Transistors N- Channel Enhancement- Mode Lateral MOSFETs

RF Power Field Effect Transistors N- Channel Enhancement- Mode Lateral MOSFETs echnical Data RF Power Field Effect ransistors N- Channel Enhancement- ode Lateral OSFEs Designed for broadband commercial and industrial applications with frequencies from 470 to 860 Hz. he high gain