Symbol Parameter VRF141(MP) Unit V DSS Drain-Source Voltage 80 V I D Continuous Drain T C

Transcription

1 VRF4 VRF4MP 28V, 5W, 75MHz RF POWER VERTICAL MOSFET The VRF4 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion. FEATURES Improved Ruggedness V (BR)DSS = 8 V 5W with 22 Typical 3MHz, 28V 5W with 3 Typical 75MHz, 28V Excellent Stability & Low IMD Common Source Configuration Available in Matched Pairs Maximum Ratings 3: Load VSWR Capability at Specified Operating Conditions Nitride Passivated Refractory Gold Metallization High Voltage Replacement for MRF4 RoHS Compliant All Ratings: T C =25 C unless otherwise specified Symbol Parameter VRF4(MP) Unit V DSS Drain-Source Voltage 8 V Continuous Drain T C = 25 C 2 A V GS Gate-Source Voltage ±4 V P D Total Device T C = 25 C 3 W T STG Storage Temperature Range -65 to 5 Operating Junction Temperature 2 C Static Electrical Characteristics Symbol Parameter Min Typ Max Unit V (BR)DSS Drain-Source Breakdown Voltage (V GS = V, = ma) 8 V DS(ON) On State Drain Voltage ((ON) = A, V GS = V).9. V SS Zero Gate Voltage Drain Current (V DS = 6V, V GS = V). ma I GSS Gate-Source Leakage Current (V DS = ±2V, V DS = V). μa g fs Forward Transconductance (V DS = V, = 5A) 5. mhos V GS(TH) Gate Threshold Voltage (V DS = V, = ma) V Thermal Characteristics Symbol Characteristic Min Typ Max Unit R θjc Junction to Case Thermal Resistance.6 C/W Dynamic Characteristics Symbol Parameter Test Conditions Min Typ Max Unit C ISS Input Capacitance V GS = V 4 C oss Output Capacitance V DS = 28V 375 pf C rss Reverse Transfer Capacitance f = MHz 5 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website Rev D 9-2

2 Functional Characteristics VRF4(MP) Symbol Parameter Min Typ Max Unit G PS = 3.MHz, V DD 6 2 G PS = 75MHz, V DD = 5W 3 η = 3.MHz,V DD 4 45 % IMD (d3) = 3.MHz, V DD IMD (d) = 3.MHz, V DD -6 ψ Class A Characteristics = 3.MHz, V DD 3: VSWR - All Phase Angles Symbol Test Conditions Min Typ Max Unit G PS = 3.MHz,V DD = 4.A, = 5W PEP 23 No Degradation in Output Power IMD (d3) = 3.MHz,V DD = 4.A, = 5W PEP -5 IMD (d9-d3) = 3.MHz,V DD = 4.A, = 5W PEP -75. To MIL-STD-3 Version A, test method 224B, Two Tone, Reference Each Tone Microsemi reserves the right to change, without notice, the specifications and information contained herein. Typical Performance Curves, DRAIN CURRENT (A) V V 9V 8V 7V 6V 5V 4V V, DRAIN-TO-SOURCE VOLTAGE (V) DS(ON) FIGURE, Output Characteristics, DRAIN CURRENT (A) μs PULSE TEST<.5 % DUTY CYCLE = -55 C = 25 C = 25 C V GS, GATE-TO-SOURCE VOLTAGE (V) FIGURE 2, Transfer Characteristics C iss Max Rev D 9-2 C, CAPACITANCE (pf) C oss C rss V DS, DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 3, Capacitance vs Drain-to-Source Voltage, DRAIN CURRENT (V) = 25 C T C = 75 C R ds(on) Pdmax V DS, DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 4, Forward Safe Operating Area

3 Typical Performance Curves VRF4(MP).7 Z θjc, THERMAL IMPEDANCE ( C/W) D = Note: t.2.3 t 2 t = Pulse Duration.. Duty Factor D = t /t 2.5 SINGLE PULSE Peak = P DM x Z θjc + T C RECTANGULAR PULSE DURATION (seconds) Figure 5. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration P DM IMD, INTERMODULATION DISTORTION () Vdd=28V, Idq = 25mA, Freq=5MHz IM3 IM , OUTPUT POWER (WATTS PEP) Figure 6. IMD versus P OUT OUTPUT POWER (W PEP ) Vdd=28V, Idq = 25mA, Freq=3MHz 2 3 4, INPUT POWER (WATTS PEP) Figure 7. P IN versus P OUT 25 Vdd=28V, Idq = 25mA, Freq=75MHz OUTPUT POWER (W PEP ) , INPUT POWER (WATTS PEP) Figure 7. P IN versus P OUT Rev D 9-2

4 3 MHz test Circuit VRF4(MP) 75 MHz test Circuit Rev D 9-2

5 VRF4(MP) Adding MP at the end of P/N specifi es a matched pair where V GS(TH) is matched between the two parts. V TH values are marked on the devices per the following table. Code Vth Range Code 2 Vth Range A M B N C P D R E S F T G W H X J Y K Z V TH values are based on Microsemi measurements at datasheet conditions with an accuracy o.%. M74 Package Outline.5 SOE All Dimensions to be ±.5 Q A U M 4 M INCHES MILLIMETERS DIM MIN MAX MIN MAX A B R B C D PIN - SOURCE PIN 2 - GATE PIN 3 - SOURCE PIN 4 - DRAIN J 2 K 3 D E H J K.435. M 45 NOM 45 NOM Q Rev D 9-2 H E C Seating Plane R U