Symbol Parameter VRF148A(MP) Unit V DSS Drain-Source Voltage 170 V I D Continuous Drain T C
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1 VRF48A VRF48AMP 5V, 3W, 75MHz RF POWER VERTICAL MOSFET The VRF48A is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion. FEATURES Improved Ruggedness V (BR)DSS = 7 V 3W with Typical 3MHz, 5V 3W with 6 Typical 75MHz, 5V Excellent Stability & Low IMD Common Source Configuration Available in Matched Pairs 3: Load VSWR Capability at Specified Operating Conditions Nitride Passivated Refractory Gold Metallization High Voltage Replacement for MRF48A RoHS Compliant Maximum Ratings All Ratings: T C =25 C unless otherwise specified Symbol Parameter VRF48A(MP) Unit V DSS Drain-Source Voltage 7 V Continuous Drain T C = 25 C 6 A V GS Gate-Source Voltage ±4 V P D Total Device T C = 25 C 5 W T STG Storage Temperature Range -65 to 5 Operating Junction Temperature C Static Electrical Characteristics Symbol Parameter Min Typ Max Unit V (BR)DSS Drain-Source Breakdown Voltage (V GS = V, = ma) 7 V DS(ON) On State Drain Voltage ((ON) = 2.5A, V GS = V) V SS Zero Gate Voltage Drain Current (V DS = V, V GS = V). ma I GSS Gate-Source Leakage Current (V DS = ±V, V DS = V). μa g fs Forward Transconductance (V DS = V, = 2.5A).8 mhos V GS(TH) Gate Threshold Voltage (V DS = V, = ma) V Thermal Characteristics Symbol Characteristic Min Typ Max Unit R θjc Junction to Case Thermal Resistance.52 C/W CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website Rev C 9-
2 Dynamic Characteristics VRF48A(MP) Symbol Parameter Test Conditions Min Typ Max Unit C ISS Input Capacitance V GS = V 6 C oss Output Capacitance V DS = 5V 4 pf C rss Reverse Transfer Capacitance f = MHz 2.6 Functional Characteristics Symbol Parameter Min Typ Max Unit G PS = 3MHz, V DD = ma, = 3W 8 G PS = 75MHz, V DD = ma, = 3W 6 η = ma, 3 W PEP 4 η = 3MHz, V DD = ma, 3 W CW 5 % IMD (d3) = ma, = 3W PEP IMD (d) = ma, = 3W PEP -6 ψ = 3.MHz,V DD = ma, = 3W PEP 3: VSWR - All Phase Angles No Degradation in Output Power Class A Characteristics Symbol Test Conditions Min Typ Max Unit G PS =.A, = W PEP IMD (d3) =.A, = W PEP -5 IMD (d9-d3) =.A, = W PEP -7. To MIL-STD-3 Version A, test method 24B, Two Tone, Reference Each Tone Microsemi reserves the right to change, without notice, the specifications and information contained herein. Typical Performance Curves, DRAIN CURRENT (A) V 6V 5V 4V V, DRAIN-TO-SOURCE VOLTAGE (V) DS(ON) FIGURE, Output Characteristics 3V V 9V 8V, DRAIN CURRENT (A) V GS, GATE-TO-SOURCE VOLTAGE (V) FIGURE 2, Transfer Characteristics 25μs PULSE TEST<.5 % DUTY CYCLE = -55 C = 25 C = 25 C C iss Max Pdmax Rev C 9- C, CAPACITANCE (pf) C oss C rss V DS, DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 3, Capacitance vs Drain-to-Source Voltage, DRAIN CURRENT (V) = 25 C T C = 75 C R ds(on). V DS, DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 4, Forward Safe Operating Area
3 Typical Performance Curves VRF48A(MP).6 Z θjc, THERMAL IMPEDANCE ( C/W) Duty Factor D = t /t 2 Peak = P DM x Z θjc + T C RECTANGULAR PULSE DURATION (seconds) Figure 5. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration Note: P DM t t 2 t = Pulse Duration IMD, INTERMODULATION DISTORTION () Vdd=28V, Idq = 25mA, Freq=3MHz IM3 IM , OUTPUT POWER (WATTS PEP) Figure 6. IMD versus P OUT IMD, INTERMODULATION DISTORTION () Vdd=28V, Idq = 25mA, Freq=75MHz IM3 IM , OUTPUT POWER (WATTS PEP) Figure 7. IMD versus P OUT 6 5 Vdd=28V, Idq = 25mA, Freq=3MHz 6 5 Vdd=28V, Idq = 25mA, Freq=75MHz OUTPUT POWER (W PEP ) 4 3 OUTPUT POWER (W PEP ) , INPUT POWER (WATTS PEP) Figure 8. P IN versus P OUT , INPUT POWER (WATTS PEP) Figure 9. P IN versus P OUT Rev C 9-
4 3 MHz test circuit VRF48A(MP) 75 MHz test circuit Rev C 9-
5 Adding MP at the end of P/N specifi es a matched pair where V GS(TH) is matched between the two parts. V TH values are marked on the devices per the following table. VRF48A(MP) Code Vth Range Code 2 Vth Range A M B N C P D R E S F T G W H X J Y K Z V TH values are based on Microsemi measurements at datasheet conditions with an accuracy o.%. M3 Package Outline.375 SOE All Dimensions to be ±.5 A U M DIM INCHES MILLIMETERS MIN MAX MIN MAX Q 4 M R B A B C D PIN - SOURCE PIN 2 - GATE PIN 3 - SOURCE PIN 4 - DRAIN S 2 K 3 D E H J K M Q J R H E C S U Rev C 9-
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Semiconductor BUZB Data Sheet October 998 File Number 9. [ /Title (BUZ B) /Subject A, V,. hm, N- hannel ower OS- ET) /Author ) /Keyords Harris emionducor, N- hannel ower OS- ET, O- AA) /Creator ) /DOCIN
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