RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs

Transcription

1 Freescale Semiconductor Technical Data RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs RF power transistors suitable for both narrowband and broadband CW or pulse applications operating at frequencies from 1.8 to 2000 MHz, such as military and radio communications and radar. These devices are fabricated using Freescale s enhanced ruggedness platform and are suitable for use in applications where high VSWRs are encountered. Typical Performance: V DD =50Vdc Document Number: MMRF1305H Rev. 0, 12/2013 MMRF1305HR5 MMRF1305HSR MHz, 100 W, 50 V BROADBAND RF POWER LDMOS TRANSISTORS Frequency (MHz) Signal Type P out (W) G ps (db) D (%) IMD (dbc) (1,3) Two--Tone (100 khz spacing) 100 PEP (2) CW (2) Pulse (200 sec, 20% Duty Cycle) Load Mismatch/Ruggedness 100 Peak NI -780H -4L MMRF1305HR5 Frequency (MHz) Signal Type VSWR P out (W) Test Voltage Result 512 (2) Pulse (100 sec, 20% Duty Cycle) >65:1 at all Phase Angles 130 (3 db Overdrive) 512 (2) CW 126 (3 db Overdrive) 50 No Device Degradation NI -780S -4L MMRF1305HSR5 1. Measured in MHz broadband reference circuit. 2. Measured in 512 MHz narrowband test circuit. 3. The values shown are the minimum measured performance numbers across the indicated frequency range. Features Gate A Drain A Wide Operating Frequency Range Extremely Rugged Unmatched, Capable of Very Broadband Operation Integrated Stability Enhancements Low Thermal Resistance Integrated ESD Protection Circuitry In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel. Gate B Drain B (Top View) Note: The backside of the package is the source terminal for the transistors. Figure 1. Pin Connections Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage V DSS --0.5, +133 Vdc Gate--Source Voltage V GS --6.0, +10 Vdc Storage Temperature Range T stg --65 to +150 C Case Operating Temperature T C --40 to +150 C Operating Junction Temperature (4) T J --40 to +225 C 4. Continuous use at maximum temperature will affect MTTF., All rights reserved. 1

2 Table 2. Thermal Characteristics Characteristic Symbol Value (1) Unit Thermal Resistance, Junction to Case CW: Case Temperature 81C, 100 W CW, 50 Vdc, I DQ(A+B) = 100 ma, 512 MHz Thermal Impedance, Junction to Case Pulse: Case Temperature 73C, 100 W Peak, 100 sec Pulse Width, 20% Duty Cycle, 50 Vdc, I DQ(A+B) = 100 ma, 512 MHz R JC 0.38 C/W Z JC 0.12 C/W Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22--A114) Machine Model (per EIA/JESD22--A115) Charge Device Model (per JESD22--C101) Class 2, passes 2500 V B, passes 250 V IV, passes 2000 V Table 4. Electrical Characteristics (T A =25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Off Characteristics (2) Gate--Source Leakage Current (V GS =5Vdc,V DS =0Vdc) Drain--Source Breakdown Voltage (V GS =0Vdc,I D =50mA) Zero Gate Voltage Drain Leakage Current (V DS =50Vdc,V GS =0Vdc) Zero Gate Voltage Drain Leakage Current (V DS = 100 Vdc, V GS =0Vdc) On Characteristics Gate Threshold Voltage (2) (V DS =10Vdc,I D = 170 Adc) Gate Quiescent Voltage (V DD =50Vdc,I D = 100 madc, Measured in Functional Test) Drain--Source On--Voltage (2) (V GS =10Vdc,I D =1Adc) Dynamic Characteristics (2) Reverse Transfer Capacitance (V DS =50Vdc 30 1 MHz, V GS =0Vdc) Output Capacitance (V DS =50Vdc 30 1 MHz, V GS =0Vdc) Input Capacitance (V DS =50Vdc,V GS =0Vdc 30 1 MHz) I GSS 400 nadc V (BR)DSS Vdc I DSS 3 Adc I DSS 10 Adc V GS(th) Vdc V GS(Q) Vdc V DS(on) 0.23 Vdc C rss 0.24 pf C oss 23.9 pf C iss 73.6 pf Functional Tests (In Freescale Test Fixture, 50 ohm system) V DD =50Vdc,I DQ(A+B) = 100 ma, P out = 100 W Peak (20 W Avg.), f = 512 MHz, 200 sec Pulse Width, 20% Duty Cycle Power Gain G ps db Drain Efficiency D % Input Return Loss IRL db Load Mismatch/Ruggedness (In Freescale Test Fixture, 50 ohm system, I DQ(A+B) = 100 ma) Frequency (MHz) Signal Type VSWR P out (W) Test Voltage, V DD Result 512 Pulse (100 sec, 20% Duty Cycle) >65:1 at all Phase Angles 130 Peak (3 db Overdrive) 50 No Device Degradation CW 126 (3 db Overdrive) 1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to Select Documentation/Application Notes -- AN Each side of device measured separately. 2

3 TYPICAL CHARACTERISTICS C, CAPACITANCE (pf) ma Measured with 30 1 MHz 1.04 V GS =0Vdc C iss 300 ma 1.02 I DQ(A+B) = 100 ma V DD =50Vdc ma 10 C oss C rss V DS, DRAIN--SOURCE VOLTAGE (VOLTS) T C, CASE TEMPERATURE (C) Note: Each side of device measured separately. Figure 2. Capacitance versus Drain -Source Voltage NORMALIZED V GS(Q) Figure 3. Normalized V GS versus Quiescent Current and Case Temperature 100 I DQ (ma) Slope (mv/c) I D =2.2Amps V DD =50Vdc MTTF (HOURS) Amps 3.3 Amps T J, JUNCTION TEMPERATURE (C) 250 Note: MTTF value represents the total cumulative operating time under indicated test conditions. MTTF calculator available at Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 4. MTTF versus Junction Temperature - CW 3

4 512 MHz NARROWBAND PRODUCTION TEST FIXTURE C1 B1 C2 C13 C10 C11 C14 C12 COAX1 L1 L3 COAX3 COAX2 C4 C5 C3 L2 C6 C7 CUT OUT AREA L4 C15 C16 C17 C18 COAX4 C24 C8 B2 C9 C19 C21 C20 C22 C23 Figure 5. MMRF1305HR5(HSR5) Narrowband Test Circuit Component Layout 512 MHz Table 5. MMRF1305HR5(HSR5) Narrowband Test Circuit Component Designations and Values 512 MHz Part Description Part Number Manufacturer B1, B2 Small Ferrite Beads, Surface Mount Fair-Rite C1, C8 22 F, 35 V Tantalum Capacitors T491X226K035AT Kemet C2, C9 120 pf Chip Capacitors ATC100B121JT500XT ATC C3 4.3 pf Chip Capacitor ATC100B4R3CT500XT ATC C4, C5 56 pf Chip Capacitors ATC100B560CT500XT ATC C6, C7, C15, C16, C17, C18 27 pf Chip Capacitors ATC100B270JT500XT ATC C10, C F Chip Capacitors C1812F104K1RACTU Kemet C11, C F Chip Capacitors C1825C103K1GACTU Kemet C12, C F, 63 V Electrolytic Capacitors MCGPR63V477M13X26-RH Multicomp C13, C pf Chip Capacitors ATC100B241JT200XT ATC C14, C F Chip Capacitors G2225X7R225KT3AB ATC C pf Chip Capacitor ATC100B7R5CT500XT ATC Coax1, 2 25 Semi Rigid Coax, 2.2 Shield Length UT-141C-25 Micro-Coax Coax3, 4 25 Semi Rigid Coax, 2.0 Shield Length UT-141C-25 Micro-Coax L1, L2 5 Turns, 18.5 nh Inductors, Wire Wound A05TKLC Coilcraft L3, L4 7 Turns, 22 nh Inductors, Wire Wound B07TJLC Coilcraft PCB 0.030, r =2.55 AD255D Arlon 4

5 RF INPUT Z1 COAX1 COAX2 + B1 V BIAS + C1 C2 L1 Z7 L3 Z10 Z9 Z11 C13 C14 C10 C11 C12 COAX3 C15 Z12 Z2 Z3 Z4 Z5 Z6 Z8 C16 Z15 Z16 C3 C4 Z17 C6 C7 Z18 Z19 Z21 DUT C5 Z20 Z22 Z24 C17 Z25 L2 Z23 B2 V BIAS + L4 C8 C9 C18 COAX4 + C19 C20 C21 C22 C23 Figure 6. MMRF1305HR5(HSR5) Narrowband Test Circuit Schematic 512 MHz Table 6. MMRF1305HR5(HSR5) Narrowband Test Circuit Microstrips 512 MHz Microstrip Description Microstrip Description Z Microstrip Z2, Z Microstrip Z3, Z Microstrip Z4, Z Microstrip Z5, Z Microstrip Z6, Z Microstrip Z7*, Z20* Microstrip Z8, Z Microstrip Z9, Z Microstrip Z10*, Z23* Microstrip Z11, Z Microstrip Z12, Z Microstrip Z Microstrip Z Microstrip * Line length includes microstrip bends V SUPPLY V SUPPLY Z13 Z14 C24 RF OUTPUT 5

6 TYPICAL CHARACTERISTICS 512 MHz P out, OUTPUT POWER (WATTS) V DD =50Vdc f = 512 MHz P in =0.24W P in =0.12W V GS, GATE--SOURCE VOLTAGE (VOLTS) P out, OUTPUT POWER (dbm) V DD =50Vdc I DQ(A+B) = 100 ma f = 512 MHz P in, INPUT POWER (dbm) Figure 7. CW Output Power versus Gate -Source Voltage at a Constant Input Power f (MHz) P1dB (W) P3dB (W) Figure 8. CW Output Power versus Input Power G ps, POWER GAIN (db) V DD =50Vdc I DQ(A+B) = 100 ma f = 512 MHz T C =--30_C --30_C 25_C 85_C 25_C 23 G ps 30 D 85_C D, DRAIN EFFICIENCY (%) P out, OUTPUT POWER (WATTS) CW Figure 9. Power Gain and Drain Efficiency versus CW Output Power 6

7 512 MHz NARROWBAND PRODUCTION TEST FIXTURE V DD =50Vdc,I DQ(A+B) = 100 ma, P out = 100 W Peak f MHz Z source Z load j j18.0 Z source = Test circuit impedance as measured from gate to gate, balanced configuration. Z load = Test circuit impedance as measured from drain to drain, balanced configuration. 50 Input Matching Network + Device Under Test -- Output Matching Network Z source Z load Figure 10. Narrowband Series Equivalent Source and Load Impedance 512 MHz 7

8 MHz BROADBAND REFERENCE CIRCUIT Table MHz Broadband Performance (In Freescale Reference Circuit, 50 ohm system) V DD =50Volts,I DQ(A+B) = 400 ma Signal Type P out (W) f (MHz) G ps (db) D (%) IMD (dbc) Two-Tone (200 khz spacing) 25 PEP PEP PEP PEP

9 MHz BROADBAND REFERENCE CIRCUIT R1 C1 C6 C5 C14 R3 E6 T4 Connects shields above PCB T2 E3 L1 E5 E1 E2 C2 C3 E4 Q1 C7 C8 C9 C10 C11 C15 T3 L2 T1 E7 R4 R2 C4 C12 C13 C16 Figure 11. MMRF1305HR5(HSR5) Broadband Reference Circuit Component Layout MHz Table 8. MMRF1305HR5(HSR5) Broadband Reference Circuit Component Designations and Values MHz Part Description Part Number Manufacturer C1, C4 2.2 F Chip Capacitors C1825C225J5RAC Kemet C2, C3, C7, C8, C9, C10 20K pf Chip Capacitors ATC200B203KT50XT ATC C5, C nf Chip Capacitors C1812C224K5RAC-TU Kemet C6, C F Chip Capacitors G2225X7R225KT3AB ATC C pf Chip Capacitor ATC100B2R7BT500XT ATC C14, C F, 63 V Electrolytic Capacitors MCGPR63V477M13X26-RH Multicomp C pf Chip Capacitor ATC100B2R0BT500XT ATC E1, E2 #43 Ferrite Beads Fair-Rite E3, E4, E5 Binocular Toroid K Material K Ferronics E6, E7 Toroid Ferrite K Material K Ferronics L1, L2 10 Turns, #18 AWG, Toroid Transformer with 8075 Copper Magnetic Wire Belden Ferrites E6, E7 Q1 RF Power LDMOS Transistor MRFE6VP100HR5 Freescale R1, R2 10, 1/4 W Chip Resistors CRCW120610ROJNEA Vishay R3, R4 56, 1/4 W Chip Resistors CRCW120656ROJNEA Vishay T1 50 Flex Cable, 4 Sucoform 141 Hubert+Suhner T2, T3 22 Flex Cable, 3.25 M RC1509 Whitmor-Wirenetics T4 25 Semi Rigid, 2.75 UT Micro-Coax PCB 0.030, r =2.55 AD255A Arlon 9

10 V BIAS R1 L1, E6 C6 C5 + C14 V SUPPLY C1 R3 Z12 C7 Z6 Z10 Z14 Z16 Z18 RF INPUT Z1 T1 Z2 E1, E2 C2 Z4 T3 E4 Z8 DUT C8 C11 E5 T4 Z20 RF OUTPUT Z3 C3 Z5 T2 E3 Z9 Z11 Z15 C9 Z17 Z19 C15 Z7 V BIAS R2 R4 L2, E7 Z13 C10 C4 + V SUPPLY C12 C13 C16 Figure 12. MMRF1305HR5(HSR5) Broadband Test Circuit Schematic MHz Table 9. MMRF1305HR5(HSR5) Narrowband Test Circuit Microstrips MHz Microstrip Description Microstrip Description Z Microstrip Z12*, Z13* Microstrip Z2, Z Microstrip Z14, Z Microstrip Z4,Z Microstrip Z16, Z Microstrip Z6*, Z7* Microstrip Z18, Z Microstrip Z8, Z Microstrip Z Microstrip Z10, Z Microstrip * Line length includes microstrip bends 10

11 TYPICAL CHARACTERISTICS MHz BROADBAND REFERENCE CIRCUIT G ps, POWER GAIN (db) V DD =50Vdc,P in =2W I DQ(A+B) = 100 ma P out G ps D f, FREQUENCY (MHz) Figure 13. Power Gain, CW Output Power and Drain Efficiency versus Frequency at a Constant Input Power P out, OUTPUT POWER (WATTS) CW D, DRAIN EFFICIENCY (%) P out, OUTPUT POWER (WATTS) V DD =50Vdc P in =1W 512 MHz 30 MHz 100 MHz P out, OUTPUT POWER (WATTS) V DD =50Vdc P in =2W 512 MHz 100 MHz 30 MHz V GS, GATE--SOURCE VOLTAGE (VOLTS) Figure 14. CW Output Power versus Gate -Source Voltage at a Constant Input Power V GS, GATE--SOURCE VOLTAGE (VOLTS) Figure 15. CW Output Power versus Gate -Source Voltage at a Constant Input Power 11

12 TYPICAL CHARACTERISTICS MHz BROADBAND REFERENCE CIRCUIT P out, OUTPUT POWER (dbm) V DD =50Vdc I DQ(A+B) = 100 ma f=30mhz 100 MHz 512 MHz P in, INPUT POWER (dbm) f (MHz) P1dB (W) P3dB (W) Figure 16. CW Output Power versus Input Power G ps, POWER GAIN (db) V DD =50Vdc 24 I DQ(A+B) = 100 ma MHz D MHz 512 MHz MHz 30 MHz 512 MHz P out, OUTPUT POWER (WATTS) CW G ps Figure 17. Power Gain and Drain Efficiency versus CW Output Power D, DRAIN EFFICIENCY (%) 12

13 TYPICAL CHARACTERISTICS MHz BROADBAND REFERENCE CIRCUIT TWO -TONE (1) IMD, INTERMODULATION DISTORTION (dbc) --10 V DD =50Vdc,I DQ(A+B) = 400 ma --20 f1 = 29.9 MHz, f2 = 30.1 MHz --20 Two--Tone Measurements rd Order 5th Order 7th Order P out, OUTPUT POWER (WATTS) PEP Figure 18. Intermodulation Distortion Products versus Output Power 30 MHz IMD, INTERMODULATION DISTORTION (dbc) V DD =50Vdc,I DQ(A+B) = 400 ma f1 = 99.9 MHz, f2 = MHz Two--Tone Measurements 3rd Order 5th Order 7th Order 10 P out, OUTPUT POWER (WATTS) PEP Figure 19. Intermodulation Distortion Products versus Output Power 100 MHz IMD, INTERMODULATION DISTORTION (dbc) V DD =50Vdc,I DQ(A+B) = 400 ma f1 = MHz, f2 = MHz Two--Tone Measurements 3rd Order 10 5th Order 7th Order P out, OUTPUT POWER (WATTS) PEP Figure 20. Intermodulation Distortion Products versus Output Power 520 MHz 1. The distortion products are referenced to one of the two tones and the peak envelope power (PEP) is 6 db above the power in a single tone. 13

14 MHz BROADBAND REFERENCE CIRCUIT f = 512 MHz Z o =50 f = 512 MHz Z source f=30mhz f=30mhz Z load f MHz V DD =50Vdc,P out = 100 W CW Z source Z load j j j j j j j j j j j j j j j j j j j j13.5 Z source = Test circuit impedance as measured from gate to gate, balanced configuration. Z load = Test circuit impedance as measured from drain to drain, balanced configuration. 50 Input Matching Network + Device Under Test -- Output Matching Network 50 Z source -- + Z load Figure 21. Broadband Series Equivalent Source and Load Impedance MHz 14

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19 PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 0 Dec Initial Release of Data Sheet 19

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