RF Power LDMOS Transistor N Channel Enhancement Mode Lateral MOSFET

Transcription

1 Freescale Semiconductor Technical Data Document Number: AFT23S170 13S Rev. 0, 6/2013 RF ower LDMOS Transistor N Channel nhancement Mode Lateral MOSFT This 45 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2300 to 2400 MHz. Typical Single Carrier W CDMA erformance: V DD = 28 Volts, I DQ = 1100 ma, out = 45 Watts Avg., Input Signal AR = % robability on CCDF. Frequency G ps (db) D (%) Output AR (db) ACR (dbc) IRL (db) MHz, 45 W AVG., 28 V 2300 MHz MHz MHz Features Greater Negative Gate Source Voltage Range for Improved Class C Operation Designed for Digital redistortion rror Correction Systems Optimized for Doherty Applications In Tape and Reel. R3 Suffix = 250 Units, 44 mm Tape Width, 13 inch Reel. N.C. NI 780S 2L4S 1 6 VBW (1) RF in /V GS 2 5 RF out /V DS N.C. 3 4 VBW (1) (Top View) Figure 1. in Connections 1. Device can operate with the V DD current supplied through pin 4 and pin 6 at a reduced RF output power level. Refer to CW operation data in the Maximum Ratings table., All rights reserved. 1

2 Table 1. Maximum Ratings Rating Symbol Value Unit Drain Source Voltage V DSS 0.5, +65 Vdc Gate Source Voltage V GS 6.0, +10 Vdc Operating Voltage V DD 32, +0 Vdc Storage Temperature Range T stg 65 to +150 C Case Operating Temperature Range T C 40 to +150 C Operating Junction Temperature Range (1,2) T J 40 to +225 C CW T C = 25 C when DC current is fed through pin 4 and pin 6 Derate above 25 C Table 2. Thermal Characteristics CW W W/ C Characteristic Symbol Value (2,3) Unit Thermal Resistance, Junction to Case Case Temperature 78 C, 45 W CW, 28 Vdc, I DQ = 1100 ma, 2350 MHz R θjc 0.42 C/W Table 3. SD rotection Characteristics Test Methodology Class Human Body Model (per JSD22 A114) 2 Machine Model (per IA/JSD22 A115) B Charge Device Model (per JSD22 C101) IV Table 4. lectrical Characteristics (T A = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Off Characteristics Zero Gate Voltage Drain Leakage Current (V DS = 65 Vdc, V GS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (V DS = 28 Vdc, V GS = 0 Vdc) Gate Source Leakage Current (V GS = 5 Vdc, V DS = 0 Vdc) On Characteristics Gate Threshold Voltage (V DS = 10 Vdc, I D = 219 μadc) Gate Quiescent Voltage (V DD = 28 Vdc, I D = 1100 madc, Measured in Functional Test) Drain Source On Voltage (V GS = 6 Vdc, I D = 2.19 Adc) I DSS 10 μadc I DSS 1 μadc I GSS 1 μadc V GS(th) Vdc V GS(Q) Vdc V DS(on) Vdc Functional Tests (4) (In Freescale Test Fixture, 50 ohm system) V DD = 28 Vdc, I DQ = 1100 ma, out = 45 W Avg., f = 2400 MHz, Single Carrier W CDMA, IQ Magnitude Clipping, Input Signal AR = % robability on CCDF. ACR measured in 3.84 MHz Channel ±5 MHz Offset. ower Gain G ps db Drain fficiency η D % Output eak to Average 0.01% robability on CCDF AR db Adjacent Channel ower Ratio ACR dbc Input Return Loss IRL 13 9 db 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF ower Amplifiers. Go to Select Documentation/Application Notes AN art internally matched both on input and output. (continued) 2

3 Table 4. lectrical Characteristics (T A = 25 C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Load Mismatch (In Freescale Test Fixture, 50 ohm system) I DQ = 1100 ma, f = 2350 MHz VSWR 10:1 at 32 Vdc, 230 W CW Output ower (3 db Input Overdrive from 178 W CW Rated ower) No Device Degradation Typical erformance (In Freescale Test Fixture, 50 ohm system) V DD = 28 Vdc, I DQ = 1100 ma, MHz Bandwidth 1 db Compression oint, CW 1dB 147 W AM/M (Maximum value measured at the 3dB compression point across the MHz bandwidth) VBW Resonance oint (IMD Third Order Intermodulation Inflection oint) Φ 14.3 VBW res 95 MHz Gain Flatness in 100 MHz out = 45 W Avg. G F 0.5 db Gain Variation over Temperature ( 30 C to +85 C) Output ower Variation over Temperature ( 30 C to +85 C) ΔG db/ C Δ1dB db/ C 3

4 C11 R1 C13 C12 C1 C2 C3 C14 C5* C6* C15 C17* C4* C7* C8 C9 CUT OUT ARA C20 C16 C22 C18* R3 R2 C19 C21 *C4, C5, C6, C7, C17 and C18 are mounted vertically. AFT23S1703S Rev 2 C10 Figure 2. Test Circuit Component Layout Table 5. Test Circuit Component Designations and Values art Description art Number Manufacturer C1, C8 2.2 μf, 100 V Chip Capacitors C3225X7R1H225KT TDK C2, C7, C9, C12, C17, C pf Chip Capacitors ATC100B4R7BT500XT ATC C3, C13, C19, C nf Chip Capacitors 12065G105AT2A AVX C4, C5, C pf Chip Capacitors ATC100B0R3BT500XT ATC C6 1.0 pf Chip Capacitor ATC100B1R0BT500XT ATC C10, C μf lectrolytic Capacitors B41858C8477M000 COS C14, C22 10 μf, 100 V Chip Capacitors C5750X7S2A106KT TDK C15, C pf Chip Capacitors ATC100B0R2BT500XT ATC R1, R2 4.7 Ω, 1/4 W Chip Resistors WCR1206 4R7FI Welwyn R3 0 Ω, 2 A Chip Resistor WCR1206 R005J Welwyn CB 0.020, ε r = 3.5 RO4350B Rogers 4

5 TYICAL CHARACTRISTICS G ps, OWR GAIN (db) η D G ps ARC V DD = 28 Vdc, out = 45 W (Avg.) I DQ = 1100 ma, Single-Carrier W-CDMA 3.84 MHz Channel Bandwidth Input Signal AR = % robability on CCDF ACR IRL f, FRQUNCY (MHz) η D, DRAIN FFICINCY (%) Figure 3. Single Carrier Output eak to Average Ratio Compression (ARC) Broadband out = 45 Watts Avg. ACR (dbc) IRL, INUT RTURN LOSS (db) ARC (db) IMD, INTRMODULATION DISTORTION (dbc) V DD = 28 Vdc, out = 130 W (), I DQ = 1100 ma Two-Tone Measurements, (f1 + f2)/2 = Center Frequency of 2350 MHz IM7-L IM5-U IM5-L IM3-U IM3-L IM7-U TWO-TON SACING (MHz) Figure 4. Intermodulation Distortion roducts versus Two Tone Spacing G ps, OWR GAIN (db) OUTUT COMRSSION AT 0.01% ROBABILITY ON CCDF (db) 1 0 V DD = 28 Vdc, I DQ = 1100 ma, f = 2350 MHz Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth db = 25.9 W db = 34.9 W db = 45.2 W ARC 15 Input Signal AR = % robability on CCDF η D ACR G ps η D, DRAIN FFICINCY (%) ACR (dbc) out, OUTUT OWR (WATTS) Figure 5. Output eak to Average Ratio Compression (ARC) versus Output ower 5

6 TYICAL CHARACTRISTICS G ps, OWR GAIN (db) V DD = 28 Vdc, I DQ = 1100 ma Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth, Input Signal AR = % robability on CCDF G ps 2350 MHz 2400 MHz η D 2300 MHz 2300 MHz 2350 MHz 2400 MHz 2300 MHz 2350 MHz out, OUTUT OWR (WATTS) AVG. ACR 2400 MHz Figure 6. Single Carrier W CDMA ower Gain, Drain fficiency and ACR versus Output ower η D, DRAIN FFICINCY (%) ACR (dbc) V DD = 28 Vdc in = 0 dbm I DQ = 1100 ma Gain GAIN (db) 12 8 IRL 0 0 IRL (db) f, FRQUNCY (MHz) Figure 7. Broadband Frequency Response 6

7 V DD = 28 Vdc, I DQ = 1161 ma, ulsed CW, 10 μsec(on), 10% Duty Cycle Max Output ower 1dB f (MHz) Z source Z in Z (1) load Gain (db) (dbm) (W) D (%) AM/M j j j j j j j j j Max Output ower 3dB f (MHz) Z source Z in Z (2) load Gain (db) (dbm) (W) D (%) AM/M j j j j j j j j j (1) Load impedance for optimum 1dB power. (2) Load impedance for optimum 3dB power. Z source = Measured impedance presented to the input of the device at the package reference plane. Z in = Impedance as measured from gate contact to ground. Z load = Measured impedance presented to the output of the device at the package reference plane. Figure 8. Load ull erformance Maximum ower Tuning V DD = 28 Vdc, I DQ = 1161 ma, ulsed CW, 10 μsec(on), 10% Duty Cycle Max Drain fficiency 1dB f (MHz) Z source Z in Z (1) load Gain (db) (dbm) (W) D (%) AM/M j j j j j j j j j Max Drain fficiency 3dB f (MHz) Z source Z in Z (2) load Gain (db) (dbm) (W) D (%) AM/M j j j j j j j j j (1) Load impedance for optimum 1dB efficiency. (2) Load impedance for optimum 3dB efficiency. Z source = Measured impedance presented to the input of the device at the package reference plane. Z in = Impedance as measured from gate contact to ground. Z load = Measured impedance presented to the output of the device at the package reference plane. Figure 9. Load ull erformance Maximum Drain fficiency Tuning Input Load ull Tuner and Test Circuit Device Under Test Output Load ull Tuner and Test Circuit Z source Z in Z load 7

8 1dB TYICAL LOAD ULL CONTOURS 2350 MHz RAL (Ω) Figure 10. 1dB Load ull Output ower Contours (dbm) RAL (Ω) 58 Figure 11. 1dB Load ull fficiency Contours (%) RAL (Ω) Figure 12. 1dB Load ull Gain Contours (db) RAL (Ω) 2 Figure 13. 1dB Load ull AM/M Contours ower Gain Drain fficiency Linearity Output ower NOT: = Maximum Output ower = Maximum Drain fficiency 8

9 3dB TYICAL LOAD ULL CONTOURS 2350 MHz RAL (Ω) Figure 14. 3dB Load ull Output ower Contours (dbm) RAL (Ω) Figure 15. 3dB Load ull fficiency Contours (%) RAL (Ω) Figure 16. 3dB Load ull Gain Contours (db) RAL (Ω) Figure 17. 3dB Load ull AM/M Contours ower Gain Drain fficiency Linearity Output ower NOT: = Maximum Output ower = Maximum Drain fficiency 9

10 ACKAG DIMNSIONS 10

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12 RODUCT DOCUMNTATION, SOFTWAR AND TOOLS Refer to the following documents, software and tools to aid your design process. Application Notes AN1955: Thermal Measurement Methodology of RF ower Amplifiers Software lectromigration MTTF Calculator RF High ower Model.s2p File Development Tools rinted Circuit Boards For Software and Tools, do a art Number search at and select the art Number link. Go to the Software & Tools tab on the part s roduct Summary page to download the respective tool. The following table summarizes revisions to this document. RVISION HISTORY Revision Date Description 0 June 2013 Initial Release of Data Sheet 12

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