RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET

Transcription

1 Freescale Semiconductor Technical Data Document Number: A2T26H S Rev. 0, 9/2015 RF ower LDMOS Transistor N--Channel nhancement--mode Lateral MOSFT This 60 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2496 to 2690 MHz MHz Typical Doherty Single--Carrier W--CDMA erformance: V DD =28Vdc, I DQA = 800 ma, V GSB =0.8Vdc, out = 60 W Avg., Input Signal AR = % robability on CCDF MHz, 60 W AVG., 28 V AIRFAST RF OWR LDMOS TRANSISTOR Frequency G ps (db) Output AR (db) ACR (dbc) 2496 MHz MHz MHz Features Advanced High erformance In--ackage Doherty Greater Negative Gate--Source Voltage Range for Improved Class C Operation esigned for Digital redistortion rror Correction Systems NI -1230S -4L2L Carrier 6 VBW A (1) RF ina /V GSA 1 5 RF outa /V DSA RF inb /V GSB 2 4 RF outb /V DSB eaking (Top View) 3 VBW B (1) Figure 1. in Connections 1. Device cannot operate with V DD current supplied through pin 3 and pin 6., All rights reserved. 1

2 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage V DSS 0.5, +65 Vdc Gate--Source Voltage V GS.0, +10 Vdc Operating Voltage V DD 32, +0 Vdc Storage Temperature Range T stg 5 to +150 C Case Operating Temperature Range T C 0 to +150 C Operating Junction Temperature Range (1,2) T J 0 to +225 C Table 2. Thermal Characteristics Characteristic Symbol Value (2,3) Unit Thermal Resistance, Junction to Case Case Temperature 79 C, 60 W Avg., W--CDMA, 28 Vdc, I DQA = 800 ma, V GSB = 0.8 Vdc, 2590 MHz Table 3. SD rotection Characteristics Test Methodology R JC 0.29 C/W Human Body Model (per JSD22--A114) 2 Machine Model (per IA/JSD22--A115) Charge Device Model (per JSD22--C101) Table 4. lectrical Characteristics (T A =25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Off Characteristics (4) Zero Gate Voltage Drain Leakage Current (V DS =65Vdc,V GS =0Vdc) Class I DSS 10 Adc B IV Zero Gate Voltage Drain Leakage Current (V DS =32Vdc,V GS =0Vdc) Gate--Source Leakage Current (V GS =5Vdc,V DS =0Vdc) On Characteristics - Side A, Carrier Gate Threshold Voltage (V DS =10Vdc,I D = 160 Adc) Gate Quiescent Voltage (V DD =28Vdc,I DA = 800 madc, Measured in Functional Test) Drain--Source On--Voltage (V GS =10Vdc,I D =1.6Adc) On Characteristics - Side B, eaking Gate Threshold Voltage (V DS =10Vdc,I D = 240 Adc) Drain--Source On--Voltage (V GS =10Vdc,I D =2.4Adc) I DSS 1 Adc I GSS 1 Adc V GS(th) Vdc V GSA(Q) Vdc V DS(on) Vdc V GS(th) Vdc V DS(on) Vdc 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at 3. Refer to AN1955, Thermal Measurement Methodology of RF ower Amplifiers. Go to and search for AN ach side of device measured separately. (continued) 2

3 Table 4. lectrical Characteristics (T A =25 C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Functional Tests (1,2) (In Freescale Doherty Test Fixture, 50 ohm system) V DD =28Vdc,I DQA = 800 ma, V GSB =0.8Vdc, out =60WAvg., f = 2496 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal AR = % robability on CCDF. ACR measured in 3.84 MHz Channel 5 MHzOffset. ower Gain G ps db Drain fficiency % Output eak--to--average 0.01% robability on CCDF AR db Adjacent Channel ower Ratio ACR dbc Load Mismatch (2) (In Freescale Doherty Test Fixture, 50 ohm system) I DQA = 800 ma, V GSB = 0.8 Vdc, f = 2590 MHz, 100 sec(on), 10% Duty Cycle VSWR 10:1 at 32 Vdc, 355 W ulsed CW Output ower No Device Degradation (3 db Input Overdrive from 229 W ulsed CW Rated ower) Typical erformance (2) (In Freescale Doherty Test Fixture, 50 ohm system) V DD =28Vdc,I DQA = 800 ma, V GSB =0.8Vdc, MHz Bandwidth 1 db Compression oint, CW 1dB 209 W 3 db Compression oint (3) 3dB 363 W AM/M (Maximum value measured at the 3dB compression point across the MHz frequency range) 6.7 VBW Resonance oint (IMD Third Order Intermodulation Inflection oint) VBW res 100 MHz Gain Flatness in 194 MHz out =60WAvg. G F 0.95 db Gain Variation over Temperature (0 C to+85 C) Output ower Variation over Temperature (0 C to+85 C) G db/ C 1dB db/ C Table 5. Ordering Information Device Tape and Reel Information ackage A2T26H SR6 R6 Suffix = 150 Units, 56 mm Tape Width, 13--inch Reel NI--1230S--4L2L 1. art internally matched both on input and output. 2. Measurements made with device in an asymmetrical Doherty configuration. 3. 3dB = avg db where avg is the average output power measured using an unclipped W--CDMA single--carrier input signal where output AR is compressed to % probability on CCDF. 3

4 V GGA V DDA C1 C2 C9 C10 C17 D67508 R2 C11 R1 Z1 C3 C5 A2T26H S Rev. 2 C8 C4 C6 C CUT OUT ARA C12 C13 C7 R3 C14 C15 C16 C18 V GGB V DDB Figure 2. Test Circuit Component Layout Table 6. Test Circuit Component Designations and Values art Description art Number Manufacturer C1, C7, C9, C10, C14, C16 10 F Chip Capacitors C5750X7S2A106M230KB TDK C2, C4, C6, C8, C11, C13, C pf Chip Capacitors ATC100B5R1CT500XT ATC C3 0.4 pf Chip Capacitor ATC100B0R4CT500XT ATC C5 1.0 pf Chip Capacitor ATC100B1R0CT500XT ATC C pf Chip Capacitor ATC100B3R0CT500XT ATC C17, C F, 63 V lectrolytic Capacitors MCGR63V477M13X26 Multicomp R1 50, 4 W Termination CW12010T0050GBK ATC R2, R3 2.7, 1/4 W Chip Resistors CRCW12062R7FKA Vishay Z MHz Band, 90, 2 db Hybrid Coupler X3C251-02S Anaren CB Rogers RO4350B, 0.020, r =3.66 D67508 MTL 4

5 TYICAL CHARACTRISTICS G ps, OWR GAIN (db) V DD =28Vdc, out =60W(Avg.),I DQA = 800 ma, V GSB =0.8Vdc Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth, Input Signal AR = % robability on CCDF G ps ACR ARC f, FRQUNCY (MHz), DRAIN FFICINCY Figure 3. Single -Carrier Output eak -to -Average Ratio Compression (ARC) Broadband out = 60 Watts Avg. ACR (dbc) ARC (db) IMD, INTRMODULATION DISTORTION (dbc) V DD =28Vdc, out = 30 W (), I DQA = 800 ma V GSB = 0.8 Vdc, Two--Tone Measurements (f1 + f2)/2 = Center Frequency of 2590 MHz IM7--L IM7--U IM3--U IM5--U IM3--L IM5--L TWO--TON SACING (MHz) Figure 4. Intermodulation Distortion roducts versus Two -Tone Spacing G ps, OWR GAIN (db) OUTUT COMRSSION AT 0.01% ROBABILITY ON CCDF (db) 1 0 V DD =28Vdc,I DQA = 800 ma, V GSB =0.8Vdc f = 2590 MHz, Single--Carrier W--CDMA db = 35.6 W db = 56.5 W ACR db = 80.9 W G ps MHz Channel Bandwidth 30 Input Signal AR = 9.9 db 0.01% robability on CCDF out, OUTUT OWR (WATTS) Figure 5. Output eak -to -Average Ratio Compression (ARC) versus Output ower RAIN FFICINCY ACR (dbc) 5

6 TYICAL CHARACTRISTICS G ps, OWR GAIN (db) V DD =28Vdc,I DQA = 800 ma, V GSB =0.8Vdc Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth, Input Signal AR = % robability on CCDF 2590 MHz 2690 MHz 2496 MHz 2496 MHz 2590 MHz 2690 MHz 2690 MHz 2590 MHz 2496 MHz ACR G ps , DRAIN FFICINCY ACR (dbc) out, OUTUT OWR (WATTS) AVG. Figure 6. Single -Carrier W -CDMA ower Gain, Drain fficiency and ACR versus Output ower Gain GAIN (db) V DD =28Vdc 8 in =0dBm I DQA = 800 ma V GSB =0.8Vdc f, FRQUNCY (MHz) Figure 7. Broadband Frequency Response 6

7 Table 7. Carrier Side Load ull erformance Maximum ower Tuning V DD =28Vdc,I DQA = 789 ma, ulsed CW, 10 sec(on), 10% Duty Cycle f (MHz) Z source Z in Max Output ower 1dB Z (1) load Gain (db) (dbm) (W) j j j j j j j j j AM/M f (MHz) Z source Z in Max Output ower 3dB Z (2) load Gain (db) (dbm) (W) j j j j j j j j j (1) Load impedance for optimum 1dB power. (2) Load impedance for optimum 3dB power. Z source = Measured impedance presented to the input of the device at the package reference plane. Z in = Impedance as measured from gate contact to ground. Z load = Measured impedance presented to the output of the device at the package reference plane. Table 8. Carrier Side Load ull erformance Maximum Drain fficiency Tuning V DD =28Vdc,I DQA = 789 ma, ulsed CW, 10 sec(on), 10% Duty Cycle f (MHz) Z source Z in Max Drain fficiency 1dB Z (1) load Gain (db) (dbm) (W) j j j j j j j j j AM/M AM/M f (MHz) Z source Z in Max Drain fficiency 3dB Z (2) load Gain (db) (dbm) (W) j j j j j j j j j (1) Load impedance for optimum 1dB efficiency. (2) Load impedance for optimum 3dB efficiency. Z source = Measured impedance presented to the input of the device at the package reference plane. Z in = Impedance as measured from gate contact to ground. Z load = Measured impedance presented to the output of the device at the package reference plane. AM/M Input Load ull Tuner and Test Circuit Device Under Test Output Load ull Tuner and Test Circuit Z source Z in Z load 7

8 Table 9. eaking Side Load ull erformance Maximum ower Tuning V DD =28Vdc,V GSB =0.8Vdc, ulsed CW, 10 sec(on), 10% Duty Cycle f (MHz) Z source Z in Max Output ower 1dB Z (1) load Gain (db) (dbm) (W) j j j j j j j j j AM/M f (MHz) Z source Z in Max Output ower 3dB Z (2) load Gain (db) (dbm) (W) j j j j j j j j j (1) Load impedance for optimum 1dB power. (2) Load impedance for optimum 3dB power. Z source = Measured impedance presented to the input of the device at the package reference plane. Z in = Impedance as measured from gate contact to ground. Z load = Measured impedance presented to the output of the device at the package reference plane. Table 10. eaking Side Load ull erformance Maximum Drain fficiency Tuning V DD =28Vdc,V GSB =0.8Vdc, ulsed CW, 10 sec(on), 10% Duty Cycle f (MHz) Z source Z in Max Drain fficiency 1dB Z (1) load Gain (db) (dbm) (W) j j j j j j j j j AM/M AM/M f (MHz) Z source Z in Max Drain fficiency 3dB Z (2) load Gain (db) (dbm) (W) j j j j j j j j j (1) Load impedance for optimum 1dB efficiency. (2) Load impedance for optimum 3dB efficiency. Z source = Measured impedance presented to the input of the device at the package reference plane. Z in = Impedance as measured from gate contact to ground. Z load = Measured impedance presented to the output of the device at the package reference plane. AM/M Input Load ull Tuner and Test Circuit Device Under Test Output Load ull Tuner and Test Circuit Z source Z in Z load 8

9 1dB TYICAL CARRIR SID LOAD ULL CONTOURS 2590 MHz IMAGINARY RAL Figure 8. 1dB Load ull Output ower Contours (dbm) IMAGINARY RAL Figure 9. 1dB Load ull fficiency Contours IMAGINARY RAL Figure 10. 1dB Load ull Gain Contours (db) IMAGINARY RAL Figure 11. 1dB Load ull AM/M Contours Gain Drain fficiency Linearity Output ower NOT: = Maximum Output ower = Maximum Drain fficiency 9

10 3dB TYICAL CARRIR SID LOAD ULL CONTOURS 2590 MHz IMAGINARY RAL Figure 12. 3dB Load ull Output ower Contours (dbm) IMAGINARY RAL Figure 13. 3dB Load ull fficiency Contours IMAGINARY RAL Figure 14. 3dB Load ull Gain Contours (db) IMAGINARY RAL Figure 15. 3dB Load ull AM/M Contours Gain Drain fficiency Linearity Output ower NOT: = Maximum Output ower = Maximum Drain fficiency 10

11 1dB TYICAL AKING SID LOAD ULL CONTOURS 2590 MHz IMAGINARY RAL Figure 16. 1dB Load ull Output ower Contours (dbm) IMAGINARY RAL Figure 17. 1dB Load ull fficiency Contours.5.5 IMAGINARY RAL Figure 18. 1dB Load ull Gain Contours (db) IMAGINARY RAL Figure 19. 1dB Load ull AM/M Contours NOT: = Maximum Output ower Gain Drain fficiency Linearity Output ower = Maximum Drain fficiency 11

12 3dB TYICAL AKING SID LOAD ULL CONTOURS 2590 MHz IMAGINARY RAL Figure 20. 3dB Load ull Output ower Contours (dbm) IMAGINARY RAL Figure 21. 3dB Load ull fficiency Contours.5.5 IMAGINARY RAL RAL IMAGINARY Figure 22. 3dB Load ull Gain Contours (db) Figure 23. 3dB Load ull AM/M Contours NOT: = Maximum Output ower Gain Drain fficiency Linearity Output ower = Maximum Drain fficiency 12

13 ACKAG DIMNSIONS 13

14 14

15 RODUCT DOCUMNTATION, SOFTWAR AND TOOLS Refer to the following resources to aid your design process. Application Notes AN1955: Thermal Measurement Methodology of RF ower Amplifiers ngineering Bulletins B212: Using Data Sheet Impedances for RF LDMOS Devices Software lectromigration MTTF Calculator RF High ower Model s2p File Development Tools rinted Circuit Boards To Download Resources Specific to a Given art Number: 1. Go to 2. Search by part number 3. Click part number link 4. Choose the desired resource from the drop down menu The following table summarizes revisions to this document. RVISION HISTORY Revision Date Description 0 Sept Initial Release of Data Sheet 15

16 How to Reach Us: Home age: freescale.com Web Support: freescale.com/support Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. Freescale reserves the right to make changes without further notice to any products herein. Freescale makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters that may be provided in Freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including typicals, must be validated for each customer application by customer s technical experts. Freescale does not convey any license under its patent rights nor the rights of others. Freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/salestermsandconditions. Freescale and the Freescale logo are trademarks of, Reg. U.S. at. & Tm. Off. Airfast is a trademark of All other product or service names are the property of their respective owners Document Number: A2T26H S 16 Rev. 0, 9/2015