RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs

Transcription

1 Freescale Semiconductor Technical Data Document Number: AFT21S230S_232S Rev. 3, 3/2014 RF ower LDMOS Transistors N--Channel nhancement--mode Lateral MOSFTs These 50 W RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz. Typical Single--Carrier W--CDMA erformance: V DD =28Vdc,I DQ = 1500 ma, out = 50 W Avg., Input Signal AR = % robability on CCDF. Frequency G ps (db) D (%) Output AR (db) ACR (dbc) IRL (db) 2110 MHz AFT21S230SR3 AFT21S230-12SR3 AFT21S232SR MHz, 50 W AVG., 28 V AIRFAST RF OWR LDMOS TRANSISTORS 2140 MHz MHz Features Greater Negative Gate--Source Voltage Range for Improved Class C Operation Designed for Digital redistortion rror Correction Systems Optimized for Doherty Applications NI--780SL2L, NI--780SL4S: R3 Suffix = 250 Units, 44 mm Tape Width, 13--inch Reel. NI--780SL: R3 Suffix = 250 Units, 56 mm Tape Width, 13--inch Reel. For R5 Tape and Reel options, see p. 17. NI -780S -2L4S AFT21S230SR3 NI -780S -2L2L AFT21S230-12SR3 NI -780S -2L AFT21S232SR3 N.C. 1 6 VBW (1) 4 VBW (1) RF in /V GS 2 5 RF out /V DS RF in /V GS 1 3 RF out /V DS RF in /V GS 2 1 RF out /V DS N.C. 3 4 VBW (1) 2 VBW (1) (Top View) Figure 1. in Connections (Top View) Figure 2. in Connections (Top View) Figure 3. in Connections 1. Device can operate with the V DD current supplied through pin 4 and pin 6 (AFT21S230S) or pin 2 and pin 4 (AFT21S S) at a reduced RF output power level. Refer to CW operation data in the Maximum Ratings table., All rights reserved. 1

2 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage V DSS --0.5, +65 Vdc Gate--Source Voltage V GS --6.0, +10 Vdc Operating Voltage V DD 32, +0 Vdc Storage Temperature Range T stg --65 to +150 C Case Operating Temperature Range T C 0 to +150 C Operating Junction Temperature Range (1,2) T J 0 to +225 C CW T C =25 C when DC current is fed through drain lead, pin 5 (AFT21S230S), pin 3 (AFT21S S) or pin 1 (AFT21S232S) Derate above 25 C CW T C =25 C when DC current is fed through pin 4 and pin 6 (AFT21S230S) or pin 2 and pin 4 (AFT21S S) Derate above 25 C Table 2. Thermal Characteristics CW CW W W/ C W W/ C Characteristic Symbol Value (2,3) Unit Thermal Resistance, Junction to Case Case Temperature 80 C, 50 W CW, 28 Vdc, I DQ = 1500 ma, 2110 MHz Case Temperature 86 C, 140 W CW (4),28Vdc,I DQ = 1500 ma, 2110 MHz Table 3. SD rotection Characteristics R JC C/W Test Methodology Class Human Body Model (per JSD22--A114) 2 Machine Model (per IA/JSD22--A115) B Charge Device Model (per JSD22--C101) IV Table 4. lectrical Characteristics (T A =25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Off Characteristics Zero Gate Voltage Drain Leakage Current (V DS =65Vdc,V GS =0Vdc) Zero Gate Voltage Drain Leakage Current (V DS =28Vdc,V GS =0Vdc) Gate--Source Leakage Current (V GS =5Vdc,V DS =0Vdc) I DSS 10 Adc I DSS 1 Adc I GSS 1 Adc On Characteristics Gate Threshold Voltage (V DS =10Vdc,I D = 291 Adc) Gate Quiescent Voltage (V DD =28Vdc,I D = 1500 madc, Measured in Functional Test) Drain--Source On--Voltage (V GS =10Vdc,I D =3.7Adc) V GS(th) Vdc V GS(Q) Vdc V DS(on) Vdc 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF ower Amplifiers. Go to Select Documentation/Application Notes -- AN xceeds recommended operating conditions. See CW operation data in Maximum Ratings table. (continued) 2

3 Table 4. lectrical Characteristics (T A =25 C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Functional Tests (1) (In Freescale Test Fixture, 50 ohm system) V DD =28Vdc,I DQ = 1500 ma, out = 50 W Avg., f = 2110 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal AR = % robability on CCDF. ACR measured in 3.84 MHz Channel 5 MHzOffset. ower Gain G ps db Drain fficiency D % Output eak--to--average 0.01% robability on CCDF AR db Adjacent Channel ower Ratio ACR dbc Input Return Loss IRL db Load Mismatch (In Freescale Test Fixture, 50 ohm system) I DQ = 1500 ma, f = 2140 MHz VSWR 10:1 at 32 Vdc, 269 W CW (2) Output ower (3 db Input Overdrive from 182 W CW (2) Rated ower) No Device Degradation Typical erformance (In Freescale Test Fixture, 50 ohm system) V DD =28Vdc,I DQ = 1500 ma, MHz Bandwidth 1 db Compression oint, CW 1dB 182 (2) W AM/M (Maximum value measured at the 3dB compression point across the MHz bandwidth) VBW Resonance oint (IMD Third Order Intermodulation Inflection oint) AFT21S230S AFT21S232S VBW res MHz Gain Flatness in 60 MHz out =50WAvg. G F 0.5 db Gain Variation over Temperature (0 C to+85 C) G db/ C Output ower Variation over Temperature 1dB db/ C (0 C to+85 C) (2) 1. art internally matched both on input and output. 2. xceeds recommended operating conditions. See CW operation data in Maximum Ratings table. 3

4 C1 C22 C4 C5 C2 C8 C13* R1 C18 C19 C12* C10* C11* C16* R2 CUT OUT ARA C20 C21 C14* C17 C9 C23 C15* C6 C7 C3 AFT21S232S/AFT21S230S Rev. 0 *C10, C11, C12, C13, C14, C15 and C16 are mounted vertically. Figure 4. AFT21S230SR3(232SR3) Test Circuit Component Layout Table 5. AFT21S230SR3(232SR3) Test Circuit Component Designations and Values art Description art Number Manufacturer C1 470 F, 63 V lectrolytic Capacitor B41694A5477Q7 COS C2, C3, C4, C5, C6, C7, C22, C23 10 F, 100 V Chip Capacitors C5750X7S2A106M TDK C8, C9, C10, C11, C12, C13, C14, C pf Chip Capacitors ATC100B6R8BT500XT ATC C pf Chip Capacitor ATC100B0R6BT500XT ATC C pf Chip Capacitor ATC100B0R3BT500XT ATC C18, C19, C20, C21 1 F, 50 V Chip Capacitors CDR34BX104AKWS AVX R1, R2 8.2, 1/4 W Chip Resistors RC1206FR--108R2L Yageo CB Rogers RO4350B, 0.020, r =3.66 MTL 4

5 TYICAL CHARACTRISTICS G ps, OWR GAIN (db) V DD =28Vdc, out =50W(Avg.),I DQ = 1500 ma Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Input Signal AR = % robability on CCDF D G ps ARC f, FRQUNCY (MHz) ACR 6 IRL Figure 5. Single -Carrier Output eak -to -Average Ratio Compression (ARC) Broadband out = 50 Watts Avg D, DRAIN FFICINCY (%) ACR (dbc) IRL, INUT RTURN LOSS (db) ARC (db) IMD, INTRMODULATION DISTORTION (dbc) V DD =28Vdc, out = 172 W (), I DQ = 1500 ma Two--Tone Measurements, (f1 + f2)/2 = Center Frequency of 2140 MHz IM5--L IM5--U IM7--L IM7--U IM3--U IM3--L IMD, INTRMODULATION DISTORTION (dbc) V DD =28Vdc, out = 172 W (), I DQ = 1500 ma Two--Tone Measurements, (f1 + f2)/2 = Center Frequency of 2140 MHz IM5--L IM5--U IM3--U IM3--L IM7--U IM7--L TWO--TON SACING (MHz) TWO--TON SACING (MHz) Figure 6a. Intermodulation Distortion roducts versus Two -Tone Spacing AFT21S230S Figure 6b. Intermodulation Distortion roducts versus Two -Tone Spacing AFT21S232S G ps, OWR GAIN (db) OUTUT COMRSSION AT 0.01% ROBABILITY ON CCDF (db) db = 28 W db = 38 W V DD =28Vdc,I DQ = 1500 ma, f = 2140 MHz Single--Carrier W--CDMA 3.84 MHz Channel Bandwidth db = 49 W ARC ACR 15 Input Signal AR = % --5 robability on CCDF D G ps D DRAIN FFICINCY (%) ACR (dbc) Figure 6. out, OUTUT OWR (WATTS) Figure 7. Output eak -to -Average Ratio Compression (ARC) versus Output ower 5

6 TYICAL CHARACTRISTICS G ps, OWR GAIN (db) V DD =28Vdc,I DQ = 1500 ma, Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth 2110 MHz Input Signal AR = % 2140 MHz robability on CCDF 2170 MHz D 2170 MHz 2110 MHz 2140 MHz G ps 2110 MHz 2170 MHz 2140 MHz out, OUTUT OWR (WATTS) AVG. ACR Figure 8. Single -Carrier W -CDMA ower Gain, Drain fficiency and ACR versus Output ower D, DRAIN FFICINCY (%) ACR (dbc) V DD =28Vdc in =0dBm I DQ = 1500 ma Gain GAIN (db) IRL IRL (db) f, FRQUNCY (MHz) Figure 9. Broadband Frequency Response 6

7 f (MHz) Z source ( ) Z in ( ) V DD =28Vdc,I DQ = 1500 ma, ulsed CW, 10 sec(on), 10% Duty Cycle Max Output ower Max 1dB Z (1) load Linear D AM/M ( ) Gain (db) (dbm) (W) (%) ( ) (dbm) (W) j j j j j j j j j (1) Load impedance for optimum 1dB power. Z source = Measured impedance presented to the input of the device at the package reference plane. Z in = Impedance as measured from gate contact to ground. Z load = Measured impedance presented to the output of the device at the package reference plane. 3dB D (%) AM/M ( ) Input Load ull Tuner and Test Circuit Device Under Test Output Load ull Tuner and Test Circuit Z source Z in Z load f (MHz) Z source ( ) Z in ( ) Figure 10. Load ull erformance Maximum 1dB Tuning V DD =28Vdc,I DQ = 1500 ma, ulsed CW, 10 sec(on), 10% Duty Cycle Max Drain fficiency Max 1dB Z (1) load Linear D AM/M ( ) Gain (db) (dbm) (W) (%) ( ) (dbm) (W) j j j j j j j j j (1) Load impedance for optimum 1dB efficiency. Z source = Measured impedance presented to the input of the device at the package reference plane. Z in = Impedance as measured from gate contact to ground. Z load = Measured impedance presented to the output of the device at the package reference plane. 3dB D (%) AM/M ( ) Input Load ull Tuner and Test Circuit Device Under Test Output Load ull Tuner and Test Circuit Z source Z in Z load Figure 11. Load ull erformance Maximum Drain fficiency Tuning 7

8 1dB - TYICAL LOAD ULL CONTOURS 2140 MHz IMAGINARY ( ) RAL ( ) Figure 12. 1dB Load ull Output ower Contours (dbm) IMAGINARY ( ) RAL ( ) Figure 13. 1dB Load ull fficiency Contours (%) IMAGINARY ( ) IMAGINARY ( ) RAL ( ) Figure 14. 1dB Load ull Gain Contours (db) RAL ( ) Figure 15. 1dB Load ull AM/M Contours ( ) NOT: = Maximum Output ower = Maximum Drain fficiency Gain Drain fficiency Linearity Output ower 8

9 3dB - TYICAL LOAD ULL CONTOURS 2140 MHz IMAGINARY ( ) IMAGINARY ( ) RAL ( ) Figure 16. 3dB Load ull Output ower Contours (dbm) RAL ( ) Figure 17. 3dB Load ull fficiency Contours (%) IMAGINARY ( ) RAL ( ) 16.5 Figure 18. 3dB Load ull Gain Contours (db) IMAGINARY ( ) RAL ( ) Figure 19. 3dB Load ull AM/M Contours ( ) NOT: = Maximum Output ower = Maximum Drain fficiency Gain Drain fficiency Linearity Output ower 9

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16 RODUCT DOCUMNTATION, SOFTWAR AND TOOLS Refer to the following documents, software and tools to aid your design process. Application Notes AN1955: Thermal Measurement Methodology of RF ower Amplifiers ngineering Bulletins B212: Using Data Sheet Impedances for RF LDMOS Devices Software lectromigration MTTF Calculator RF High ower Model.s2p File Development Tools rinted Circuit Boards For Software and Tools, do a art Number search at and select the art Number link. Go to the Software & Tools tab on the part s roduct Summary page to download the respective tool. R5 TA AND RL OTION NI--780SL4S: R5 Suffix = 50 Units, 44 mm Tape Width, 13--inch Reel. NI--780SL: R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel. The R5 tape and reel option for AFT21S230S and AFT21S232S parts will be available for 2 years after release of AFT21S230S and AFT21S232S. reserves the right to limit the quantities that will be delivered in the R5 tape and reel option. At the end of the 2 year period customers who have purchased this device in the R5 tape and reel option will be offered AFT21S230S and AFT21S232S in the R3 tape and reel option. RVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 0 Oct Initial Release of Data Sheet 1 Nov Corrected Tape and Reel tape width from 32 mm to 44 mm, pp. 1, 17 2 Mar Table 1. Maximum Ratings, CW Operation for drain lead: changed CW T C =25 C from 163 W to 161 W and changed derate factor from 0.79 W/ C to0.75w/ C to reflect recent thermal measurement test results of the AFT21S230S and AFT21S232S parts, p. 2 Table 1. Maximum Ratings: added CW Operation rating and derate factor if the AFT21S230S part is biased through pin 4 and pin 6, p. 2 Table 4. Load Mismatch: added footnote 2, indicating CW output power and CW rated power exceed recommended operating conditions, p. 3 3 Mar Added part number AFT21S SR3, p. 1 Added NI 780S 2L2L package isometric, p. 1, and Mechanical Outline, pp Added Fig. 2, in Connections drawing for AFT21S SR3 and VBW lead DC feed connecvtions footnote for AFT21S230SR3 and AFT21S SR3, p. 1 Maximum Ratings table, CW operation: added AFT21S S part to VBW lead DC feed condition information, pp. 2 Table 5, Test Circuit Component Designations and Values: updated CB description to reflect most current board specifications from Rogers, p. 4 16

17 How to Reach Us: Home age: freescale.com Web Support: freescale.com/support Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. Freescale reserves the right to make changes without further notice to any products herein. Freescale makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters that may be provided in Freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including typicals, must be validated for each customer application by customer s technical experts. Freescale does not convey any license under its patent rights nor the rights of others. Freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/salestermsandconditions. Freescale and the Freescale logo are trademarks of, Reg. U.S. at. & Tm. Off. Airfast is a trademark of All other product or service names are the property of their respective owners RF Document Device Number: Data AFT21S230S_232S Freescale Rev. 3, 3/2014Semiconductor, Inc. 17