RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET

Transcription

1 Freescale Semiconductor Technical Data Document Number: MHTN Rev., / RF ower LDMOS Transistor N--Channel nhancement--mode Lateral MOSFT RF power transistor suitable for industrial heating applications from 78 to 7 MHz. Device is capable of both CW and pulse operation. MHz Typical Single--Carrier W--CDMA erformance: V DD =8Vdc,I DQ =9mA, out =. W Avg., Input Signal AR = 9.9 robability on CCDF. () Frequency G ps (%) Output AR ACR (dbc) IRL 78 7 MHz, W CW, 8 V INDUSTRIAL HATING, RUGGD RF OWR LDMOS TRANSISTOR MHz MHz MHz Features Greater Negative Gate--Source Voltage Range for Improved Class C Operation Designed for Digital redistortion rror Correction Systems Universal Broadband Driven Device with Internal RF Feedback LD -.W LASTIC RF in /V GS RF out /V DS (Top View) Note: The center pad on the backside of the package is the source terminal for the transistor. Figure. in Connections. All data measured in fixture with device soldered to heatsink.,. All rights reserved.

2 Table. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage V DSS., + Vdc Gate--Source Voltage V GS., + Vdc Operating Voltage V DD, + Vdc Storage Temperature Range T stg to + C Case Operating Temperature Range T C to + C Operating Junction Temperature Range (,) T J to + C Table. Thermal Characteristics Characteristic Symbol Value (,) Unit Thermal Resistance, Junction to Case Case Temperature 8 C, W CW, 8 Vdc, I DQ = 9 ma, MHz Table. SD rotection Characteristics Human Body Model (per JSD--A) Machine Model (per IA/JSD--A) Test Methodology Charge Device Model (per JSD--C) Table. Moisture Sensitivity Level R JC.7 C/W Class Test Methodology Rating ackage eak Temperature Unit er JSD--A, IC/JDC J--STD-- C Table. lectrical Characteristics (T A = C unless otherwise noted) Characteristic Symbol Min Typ Max Unit B A III Off Characteristics Zero Gate Voltage Drain Leakage Current (V DS =Vdc,V GS =Vdc) Zero Gate Voltage Drain Leakage Current (V DS =8Vdc,V GS =Vdc) Gate--Source Leakage Current (V GS =Vdc,V DS =Vdc) On Characteristics Gate Threshold Voltage (V DS =Vdc,I D =. Adc) Gate Quiescent Voltage (V DD =8Vdc,I D = 9 madc, Measured in Functional Test) Drain--Source On--Voltage (V GS =Vdc,I D = madc) I DSS Adc I DSS Adc I GSS Adc V GS(th).8.. Vdc V GS(Q)..8. Vdc V DS(on)... Vdc. Continuous use at maximum temperature will affect MTTF.. MTTF calculator available at Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product.. Refer to AN9, Thermal Measurement Methodology of RF ower Amplifiers. Go to Select Documentation/Application Notes -- AN9. (continued)

3 Table. lectrical Characteristics (T A = C unless otherwise noted) (continued) Typical erformance over Frequency () (In Freescale Test Fixture, ohm system) V DD =8Vdc,I DQ =9mA, out =. W Avg., Input Signal AR = 9.9 robability on CCDF Frequency G ps (%) Output AR ACR (dbc) MHz MHz MHz Functional Tests (In Freescale Test Fixture, ohm system) V DD =8Vdc,I DQ =9mA, out =. W Avg., f = 7 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal AR = 9.9 robability on CCDF. ACR measured in.8 MHz Channel MHzOffset. Characteristic Symbol Min Typ Max Unit ower Gain G ps..7 db Drain fficiency 8.. % Adjacent Channel ower Ratio ACR. 7.9 dbc Input Return Loss IRL 9 db IRL Load Mismatch (In Freescale Test Fixture, ohm system) I DQ = 9 ma, f = MHz VSWR : at Vdc,.9 W CW Output ower ( db Input Overdrive from W CW Rated ower) No Device Degradation Typical erformance () (In Freescale Test Fixture, ohm system) V DD =8Vdc,I DQ = 9 ma, 7 MHz Bandwidth db Compression oint, CW db W AM/M (Maximum value measured at the db compression point across the 7 MHz frequency range.) VBW Resonance oint (IMD Seventh Order Intermodulation Inflection oint). VBW res MHz Gain Flatness in MHz out =.WAvg. G F. db Gain Variation over Temperature ( C to+8 C) Output ower Variation over Temperature ( C to+8 C) G. db/ C db. db/ C Table. Ordering Information Device Tape and Reel Information ackage T Suffix = Units, mm Tape Width, 7--inch Reel LD--.W. All data measured in fixture with device soldered to heatsink.

4 V GG V DD C C C C C C7 C R Q C C C C C8 C9 C MHz/MHz V DD NOT: All data measured in fixture with device soldered to heatsink. Figure. Test Circuit Component Layout MHz Table 7. Test Circuit Component Designations and Values MHz art Description art Number Manufacturer C, C, C, C7, C8.8 pf Chip Capacitors ATCBR8JTXT ATC C, C pf Chip Capacitors ATCBRJTXT ATC C. pf Chip Capacitor ATCBRJTXT ATC C, C9, C, C, C F Chip Capacitors GRMRHKAL Murata C F, V lectrolytic Capacitor 7CKSM Illinois Capacitor Q RF ower LDMOS Transistor Freescale R.7, Chip Resistor CRCWR7FKA Vishay CB Rogers ROB,., r =. MTL

5 TYICAL CHARACTRISTICS MHz.8 V DD =8Vdc. out =. W (Avg.) I Q =9mA D. Single--Carrier W--CDMA. G ps.8 MHz Channel Bandwidth Input Signal AR = % robability on CCDF ACR ARC IRL f, FRQUNCY (MHz) Figure. Single -Carrier Output eak -to -Average Ratio Compression (ARC) Broadband out =.WAvg. G ps, OWR GAIN, DRAIN FFICINCY (%) ACR (dbc) IRL, INUT RTURN LOSS ARC G ps, OWR GAIN 8. V DD =8Vdc,I DQ = 9 ma, Single--Carrier W--CDMA,.8 MHz Channel Bandwidth Input Signal = 9.9 robability on CCDF G ps MHz ACR MHz MHz MHz MHz out, OUTUT OWR (WATTS) AVG. MHz MHz MHz MHz, DRAIN FFICINCY (%) ACR (dbc) Figure. Single -Carrier W -CDMA ower Gain, Drain fficiency and ACR versus Output ower Gain -- GAIN -- IRL V DD =8Vdc IRL in =dbm -- I DQ =9mA -- f, FRQUNCY (MHz) Figure. Broadband Frequency Response --

6 f (MHz) Z source Z in V DD =8Vdc,I DQ =87mA, ulsed CW, sec(on), % Duty Cycle Max Output ower db Z () load Gain (dbm) (W). j j j j j j j..9 + j.9. + j j..7 + j..8 + j j..8 + j j f (MHz) Z source Z in Max Output ower db Z () load Gain (dbm) (W). j j..8 + j j j..8 + j j..7 + j.. + j j j j j..7 + j.. + j () Load impedance for optimum db power. () Load impedance for optimum db power. Z source = Measured impedance presented to the input of the device at the package reference plane. Z in = Impedance as measured from gate contact to ground. Z load = Measured impedance presented to the output of the device at the package reference plane. f (MHz) Z source Figure. Load ull erformance Maximum ower Tuning Z in V DD =8Vdc,I DQ =87mA, ulsed CW, sec(on), % Duty Cycle Max Drain fficiency db Z () load Gain (dbm) (W). - j..8 + j.. + j j j.8. + j j.. + j.8. + j j j j j.. + j j f (MHz) Z source Z in Max Drain fficiency db Z () load Gain (dbm) (W). j..8 + j..9 + j j j j j.. + j j j.. + j.7. + j j.. + j.. + j () Load impedance for optimum db efficiency. () Load impedance for optimum db efficiency. Z source = Measured impedance presented to the input of the device at the package reference plane. Z in = Impedance as measured from gate contact to ground. Z load = Measured impedance presented to the output of the device at the package reference plane. Figure 7. Load ull erformance Maximum Drain fficiency Tuning (%) (%) (%) (%) AM/M AM/M AM/M AM/M Input Load ull Tuner and Test Circuit Device Under Test Output Load ull Tuner and Test Circuit Z source Z in Z load

7 db - TYICAL LOAD ULL CONTOURS MHz IMAGINARY RAL Figure 8. db Load ull Output ower Contours (dbm) IMAGINARY RAL Figure 9. db Load ull fficiency Contours (%) IMAGINARY IMAGINARY RAL Figure. db Load ull Gain Contours RAL Figure. db Load ull AM/M Contours NOT: = Maximum Output ower Gain = Maximum Drain fficiency Drain fficiency Linearity Output ower 7

8 db - TYICAL LOAD ULL CONTOURS MHz IMAGINARY RAL Figure. db Load ull Output ower Contours (dbm) IMAGINARY RAL Figure. db Load ull fficiency Contours (%) IMAGINARY IMAGINARY RAL Figure. db Load ull Gain Contours RAL Figure. db Load ull AM/M Contours NOT: = Maximum Output ower Gain Drain fficiency Linearity Output ower = Maximum Drain fficiency 8

9 Solder pad with thermal via structure. All dimensions in mm Figure. CB ad Layout for LD -.W MHT N( )B AWLYWZ Figure 7. roduct Marking 9

10 ACKAG DIMNSIONS

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13 RODUCT DOCUMNTATION AND SOFTWAR Refer to the following resources to aid your design process. Application Notes AN9: Thermal Measurement Methodology of RF ower Amplifiers ngineering Bulletins B: Using Data Sheet Impedances for RF LDMOS Devices Software lectromigration MTTF Calculator For Software, do a art Number search at and select the art Number link. Go to the Software & Tools tab on the part s roduct Summary page to download the respective tool. RVISION HISTORY The following table summarizes revisions to this document. Revision Date Description May Initial Release of Data Sheet Dec. Table, Maximum Ratings: corrected operating junction temperature range upper limit, p. Table, lectrical Characteristics, On Characteristics V DS(on) : updated I D unit of measure to madc to reflect actual unit of measure, p. Added Ordering Information Table, p.

14 ANDIX A: 7 MHz TYICAL RFORMANC DATA, LAYOUT AND ARTS LIST Typical erformance over Frequency () (In Freescale Test Fixture, ohm system) V DD =8Vdc,I DQ =9mA, out =. W Avg., Input Signal AR = 9.9 robability on CCDF Frequency G ps (%) Output AR ACR (dbc) IRL MHz MHz MHz V GG V DD C7 C C C C8 C* R Q C C C* C C9 C C MHz V DD *C and C are mounted vertically.. All data measured in fixture with device soldered to heatsink. Figure A -. Test Circuit Component Layout 7 MHz Table A -. Test Circuit Component Designations and Values 7 MHz art Description art Number Manufacturer C, C, C, C8, C9 9. pf Chip Capacitors ATCB9RJTXT ATC C. pf Chip Capacitor ATCBRJTXT ATC C. pf Chip Capacitor ATCBRJTXT ATC C. pf Chip Capacitor ATCBRJTXT ATC C7, C, C, C, C F Chip Capacitors GRMRHKAL Murata Q RF ower LDMOS Transistor Freescale R.7 Chip Resistor CRCWR7FKA Vishay CB Rogers ROB,., r =. MTL

15 ANDIX B: 7 MHz TYICAL RFORMANC DATA AND GRAHS, LAYOUT AND ARTS LIST Typical erformance over Frequency () (In Freescale Test Fixture, ohm system) V DD =8Vdc,I DQ =9mA, out =. W Avg., Input Signal AR = 9.9 robability on CCDF Frequency G ps (%) Output AR ACR (dbc) IRL MHz MHz MHz V GG V DD C C C C C C7 C R Q C C C C8 C9 C MHz/MHz V DD. All data measured in fixture with device soldered to heatsink. Figure B -. Test Circuit Component Layout 7 MHz Table B -. Test Circuit Component Designations and Values 7 MHz art Description art Number Manufacturer C, C, C, C7, C8.8 pf Chip Capacitors ATCBR8JTXT ATC C. pf Chip Capacitor ATCBRJTXT ATC C pf Chip Capacitor ATCBRJTXT ATC C, C9, C, C, C F Chip Capacitors GRMRHKAL Murata C F, V lectrolytic Capacitor 7CKSM Illinois Capacitor Q RF ower LDMOS Transistor Freescale R.7 Chip Resistor CRCWR7FKA Vishay CB Rogers ROB,., r =. MTL

16 Appendix B: 7 MHz Typical erformance Data and Graphs, Layout and arts List (continued) TYICAL CHARACTRISTICS 7 MHz G ps, OWR GAIN ACR V DD =8Vdc, out =. W (Avg.) I DQ = 9 ma, Single--Carrier W--CDMA.8 MHz Channel Bandwidth ARC f, FRQUNCY (MHz) Figure B -. Single -Carrier Output eak -to -Average Ratio Compression (ARC) Broadband out =.WAvg. G ps Input Signal AR = 9.9 robability on CCDF IRL, DRAIN FFICINCY (%) ACR (dbc) IRL, INUT RTURN LOSS ARC G ps, OWR GAIN 8. V DD =8Vdc,I DQ = 9 ma, Single--Carrier, W--CDMA.8 MHz Channel Bandwidth, Input Signal = 9.9 robability on CCDF 7 MHz MHz MHz G ps ACR MHz MHz 7 MHz MHz out, OUTUT OWR (WATTS) AVG. Figure B -. Single -Carrier W -CDMA ower Gain, Drain fficiency and ACR versus Output ower MHz 7 MHz, DRAIN FFICINCY (%) ACR (dbc) V DD =8Vdc in =dbm I DQ =9mA Gain GAIN -- IRL IRL f, FRQUNCY (MHz) Figure B -. Broadband Frequency Response

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