RF Power LDMOS Transistors N Channel Enhancement Mode Lateral MOSFETs

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1 Freescale Semiconductor Technical Data Document Number: AFT9H3 3S Rev., 9/23 RF ower LDMOS Transistors N Channel nhancement Mode Lateral MOSFTs These 56 watt asymmetrical Doherty RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 92 to 96 MHz. Typical Doherty Single Carrier W CDMA erformance: V DD = 28 Volts, I DQA = 68 ma, V GSB =.4 Vdc, out = 56 Watts Avg., Input Signal AR = 9.9 robability on CCDF. Frequency G ps (db) D (%) Output AR (db) ACR (dbc) AFT9H3 3SR6 AFT9H3 4GSR MHz, 56 W AVG., 28 V AIRFAST RF OWR LDMOS TRANSISTORS 92 MHz MHz MHz Features Advanced High erformance In ackage Doherty Greater Negative Gate Source Voltage Range for Improved Class C Operation Designed for Digital redistortion rror Correction Systems In Tape and Reel. R6 Suffix = 5 Units, 56 mm Tape Width, 3 inch Reel. NI 23S 4S AFT9H3 3SR6 NI 23GS 4L AFT9H3 4GSR6 Carrier RF ina /V GSA 3 RF outa /V DSA RF inb /V GSB 4 2 RF outb /V DSB eaking (Top View) Figure. in Connections, 23. All rights reserved. AFT9H3 3SR6 AFT9H3 4GSR6

2 Table. Maximum Ratings Rating Symbol Value Unit Drain Source Voltage V DSS.5, +7 Vdc Gate Source Voltage V GS 6., + Vdc Operating Voltage V DD 32, + Vdc Storage Temperature Range T stg 65 to +5 C Case Operating Temperature Range T C 4 to +5 C Operating Junction Temperature Range (,2) T J 4 to +225 C CW T C = 25 C Derate above 25 C Table 2. Thermal Characteristics CW W W/ C Characteristic Symbol Value (2,3) Unit Thermal Resistance, Junction to Case Case Temperature 75 C, 56 W W CDMA, 28 Vdc, I DQA = 68 ma, V GSB =.4 Vdc, 94 MHz Table 3. SD rotection Characteristics Test Methodology Human Body Model (per JSD22 A4) 2 Machine Model (per IA/JSD22 A5) Charge Device Model (per JSD22 C) R θjc.4 C/W Table 4. lectrical Characteristics (T A = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Off Characteristics (4) Zero Gate Voltage Drain Leakage Current (V DS = 65 Vdc, V GS = Vdc) I DSS μadc Class B IV Zero Gate Voltage Drain Leakage Current (V DS = 28 Vdc, V GS = Vdc) Gate Source Leakage Current (V GS = 5 Vdc, V DS = Vdc) On Characteristics Side A (4) (Carrier) Gate Threshold Voltage (V DS = Vdc, I D = 242 μadc) Gate Quiescent Voltage (V DD = 28 Vdc, I DA = 68 madc, Measured in Functional Test) Drain Source On Voltage (V GS = Vdc, I D =. Adc) On Characteristics Side B (4) (eaking) Gate Threshold Voltage (V DS = Vdc, I D = 3 μadc) Drain Source On Voltage (V GS = Vdc, I D =. Adc) I DSS μadc I GSS μadc V GS(th) Vdc V GSA(Q) Vdc V DS(on) Vdc V GS(th) Vdc V DS(on) Vdc. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN955, Thermal Measurement Methodology of RF ower Amplifiers. Go to Select Documentation/Application Notes AN ach side of device measured separately. (continued) AFT9H3 3SR6 AFT9H3 4GSR6 2

3 Table 4. lectrical Characteristics (T A = 25 C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Functional Tests (,2,3) (In Freescale Doherty Test Fixture, 5 ohm system) V DD = 28 Vdc, I DQA = 68 ma, V GSB =.4 Vdc, out = 56 W Avg., f = 92 MHz, Single Carrier W CDMA, IQ Magnitude Clipping, Input Signal AR = 9.9 robability on CCDF. ACR measured in 3.84 MHz Channel ±5 MHz Offset. ower Gain G ps db Drain fficiency η D % Output eak to Average robability on CCDF AR db Adjacent Channel ower Ratio ACR dbc Load Mismatch (In Freescale Test Fixture, 5 ohm system) I DQA = 68 ma, f = 94 MHz VSWR : at 32 Vdc, 28 W CW (4) Output ower (3 db Input Overdrive from 8 W CW Rated ower) No Device Degradation Typical erformances (2) (In Freescale Doherty Test Fixture, 5 ohm system) V DD = 28 Vdc, I DQA = 68 ma, V GSB =.4 Vdc, MHz Bandwidth db Compression oint, CW db 8 W 3 db Compression oint (5) 3dB 39 W AM/M (Maximum value measured at the 3dB compression point across the 92 to 96 MHz frequency range) VBW Resonance oint (IMD Third Order Intermodulation Inflection oint) Φ 3.7 VBW res 45 MHz Gain Flatness in 4 MHz out = 56 W Avg. G F.3 db Gain Variation over Temperature ( 3 C to +85 C) Output ower Variation over Temperature ( 3 C to +85 C) ΔG.5 db/ C ΔdB.35 db/ C. art internally matched both on input and output. 2. Measurements made with device in an asymmetrical Doherty configuration. 3. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull wing (GS) parts. 4. xceeds recommended operating conditions. See CW operation data in Maximum Ratings table. 5. 3dB = avg + 7. db where avg is the average output power measured using an unclipped W CDMA single carrier input signal where output AR is compressed to 7. probability on CCDF. AFT9H3 3SR6 AFT9H3 4GSR6 3

4 V GGA V DDA C3 - AFT9H3 4S Rev. 5 C C C3 Z R3 C3 C4 C7 C6 C9 C R C5 C C8 R2 CUT OUT ARA C29 C6 C27 C9 C5 C2 C22 C23 C2 C24 C25 C28 C26 C7 C8 C3 C2 C2 C4 C32 - V GGB V DDB Figure 2. AFT9H3 3SR6 Test Circuit Component Layout MHz Table 5. AFT9H3 3SR6 Test Circuit Component Designations and Values MHz art Description art Number Manufacturer C, C2, C3, C4 47 pf Chip Capacitors GQM875C247JB5 Muruta C5, C6 8.2 pf Chip Capacitors GQM875C28R2CB2D Muruta C7, C.2 pf Chip Capacitors GQM875C2R2BB5 Muruta C8, C9 6.8 pf Chip Capacitors GQM875C26R8BB5 Muruta C, C2 μf Chip Capacitors GQM875C26R8CB2D Muruta C3, C4, C5, C6, C7, C8 68 pf Chip Capacitors GQM295C268GB5 Muruta C9, C2, C2 6.8 pf Chip Capacitors GQM295C26R8BB5 Muruta C pf Chip Capacitor GQM295C23R3BB5 Muruta C23, C pf Chip Capacitors GQM295C23R9BB5 Muruta C25, C pf Chip Capacitors GQM295C24R7BB5 Muruta C27, C28.8 pf Chip Capacitors GQM295C2R8BB5 Muruta C29, C3 μf Chip Capacitors C575X7S2A6M23K TDK C3, C32 47 μf, 63 V Chip Capacitors MCGRV477M6X32-RH Multicomp R, R2 5. Ω, / W Chip Resistors CRCW635RFKA Vishay R3 5 Ω, W Termination 62A25X5 2 Anaren Z 8 MHz, 5 db, Directional Coupler XC9AS Anaren CB.2, ε r = 3.5 RO435 Rogers AFT9H3 3SR6 AFT9H3 4GSR6 4

5 TYICAL CHARACTRISTICS G ps, OWR GAIN (db) η D G ps V DD = 28 Vdc, out = 56 W (Avg.) I DQA = 68 ma, V GSB =.4 Vdc 5 ACR Single-Carrier W-CDMA MHz Channel Bandwidth 6 3 ARC 2 4 Input Signal AR = 9.9 robability on CCDF f, FRQUNCY (MHz) η D, DRAIN FFICINCY (%) Figure 3. Single Carrier Output eak to Average Ratio Compression (ARC) Broadband out = 56 Watts Avg. ACR (dbc) ARC (db) IMD, INTRMODULATION DISTORTION (dbc) IM5-U -6 V DD = 28 Vdc, out = 5 W () I DQA = 68 ma, V GSB =.4 Vdc Two-Tone Measurements (f + f2)/2 = Center Frequency of 94 MHz IM5-L IM7-L IM3-L IM3-U IM7-U -7 TWO-TON SACING (MHz) Figure 4. Intermodulation Distortion roducts versus Two Tone Spacing G ps, OWR GAIN (db) OUTUT COMRSSION AT.% ROBABILITY ON CCDF (db) 2 V DD = 28 Vdc, I DQA = 68 ma, V GSB =.4 Vdc f = 94 MHz, Single-Carrier W-CDMA 3.84 MHz Channel Bandwidth db = 33 W db = 59 W ARC Input Signal AR = 9.9 robability on CCDF db = 82 W η D ACR G ps η D, DRAIN FFICINCY (%) ACR (dbc) out, OUTUT OWR (WATTS) Figure 5. Output eak to Average Ratio Compression (ARC) versus Output ower AFT9H3 3SR6 AFT9H3 4GSR6 5

6 TYICAL CHARACTRISTICS G ps, OWR GAIN (db) V DD = 28 Vdc, I DQA = 68 ma V GSB =.4 Vdc, Single-Carrier W-CDMA 3.84 MHz, Channel Bandwidth Input Signal AR = 9.9 robability on CCDF 94 MHz 96 MHz 92 MHz G ps 94 MHz 92 MHz 94 MHz 96 MHz 96 MHz 92 MHz η D ACR η D, DRAIN FFICINCY (%) ACR (dbc) 5 4 out, OUTUT OWR (WATTS) AVG. Figure 6. Single Carrier W CDMA ower Gain, Drain fficiency and ACR versus Output ower V DD = 28 Vdc in = dbm I DQA = 68 ma V GSB =.4 Vdc Gain GAIN (db) f, FRQUNCY (MHz) Figure 7. Broadband Frequency Response AFT9H3 3SR6 AFT9H3 4GSR6 6

7 f (MHz) Z source V DD = 28 Vdc, I DQA = 694 ma, ulsed CW, μsec(on), % Duty Cycle Z in Max Output ower db Z () load Gain (db) (dbm) (W) j j j j j j j j j D (%) AM/M f (MHz) Z source Z in Max Output ower 3dB Z (2) load Gain (db) (dbm) (W) j j j j j j j j j () Load impedance for optimum db power. (2) Load impedance for optimum 3dB power. Z source = Measured impedance presented to the input of the device at the package reference plane. Z in = Impedance as measured from gate contact to ground. Z load = Measured impedance presented to the output of the device at the package reference plane. Figure 8. Carrier Side Load ull erformance Maximum ower Tuning D (%) AM/M f (MHz) Z source V DD = 28 Vdc, I DQA = 694 ma, ulsed CW, μsec(on), % Duty Cycle Z in Max Drain fficiency db Z () load Gain (db) (dbm) (W) j j j j j j j j j D (%) AM/M f (MHz) Z source Z in Max Drain fficiency 3dB Z (2) load Gain (db) (dbm) (W) j j j j j j j j j () Load impedance for optimum db efficiency. (2) Load impedance for optimum 3dB efficiency. Z source = Measured impedance presented to the input of the device at the package reference plane. Z in = Impedance as measured from gate contact to ground. Z load = Measured impedance presented to the output of the device at the package reference plane. Figure 9. Carrier Side Load ull erformance Maximum Drain fficiency Tuning D (%) AM/M Input Load ull Tuner and Test Circuit Device Under Test Output Load ull Tuner and Test Circuit Z source Z in Z load AFT9H3 3SR6 AFT9H3 4GSR6 7

8 f (MHz) Z source V DD = 28 Vdc, V GSB =.4 Vdc, ulsed CW, μsec(on), % Duty Cycle Z in Max Output ower db Z () load Gain (db) (dbm) (W) j j j j j j j j j D (%) AM/M f (MHz) Z source Z in Max Output ower 3dB Z (2) load Gain (db) (dbm) (W) j j j j j j j j j () Load impedance for optimum db power. (2) Load impedance for optimum 3dB power. Z source = Measured impedance presented to the input of the device at the package reference plane. Z in = Impedance as measured from gate contact to ground. Z load = Measured impedance presented to the output of the device at the package reference plane. Figure. eaking Side Load ull erformance Maximum ower Tuning D (%) AM/M f (MHz) Z source V DD = 28 Vdc, V GSB =.4 Vdc, ulsed CW, μsec(on), % Duty Cycle Z in Max Drain fficiency db Z () load Gain (db) (dbm) (W) j j j j j j j j j D (%) AM/M f (MHz) Z source Z in Max Drain fficiency 3dB Z (2) load Gain (db) (dbm) (W) j j j j j j j j j () Load impedance for optimum db efficiency. (2) Load impedance for optimum 3dB efficiency. Z source = Measured impedance presented to the input of the device at the package reference plane. Z in = Impedance as measured from gate contact to ground. Z load = Measured impedance presented to the output of the device at the package reference plane. Figure. eaking Side Load ull erformance Maximum Drain fficiency Tuning D (%) AM/M Input Load ull Tuner and Test Circuit Device Under Test Output Load ull Tuner and Test Circuit Z source Z in Z load AFT9H3 3SR6 AFT9H3 4GSR6 8

9 db TYICAL CARRIR SID LOAD ULL CONTOURS 94 MHz RAL (Ω) Figure 2. db Load ull Output ower Contours (dbm) RAL (Ω) Figure 3. db Load ull fficiency Contours (%) RAL (Ω) RAL (Ω) Figure 4. db Load ull Gain Contours (db) Figure 5. db Load ull AM/M Contours NOT: = Maximum Output ower Gain = Maximum Drain fficiency Drain fficiency Linearity Output ower AFT9H3 3SR6 AFT9H3 4GSR6 9

10 3dB TYICAL CARRIR SID LOAD ULL CONTOURS 94 MHz RAL (Ω) 53.5 Figure 6. 3dB Load ull Output ower Contours (dbm) RAL (Ω) Figure 7. 3dB Load ull fficiency Contours (%) RAL (Ω) Figure 8. 3dB Load ull Gain Contours (db) RAL (Ω) Figure 9. 3dB Load ull AM/M Contours NOT: = Maximum Output ower Gain = Maximum Drain fficiency Drain fficiency Linearity Output ower AFT9H3 3SR6 AFT9H3 4GSR6

11 db TYICAL AKING SID LOAD ULL CONTOURS 94 MHz RAL (Ω) Figure 2. db Load ull Output ower Contours (dbm) RAL (Ω) Figure 2. db Load ull fficiency Contours (%) RAL (Ω) RAL (Ω) Figure 22. db Load ull Gain Contours (db) Figure 23. db Load ull AM/M Contours NOT: = Maximum Output ower Gain Drain fficiency Linearity Output ower = Maximum Drain fficiency AFT9H3 3SR6 AFT9H3 4GSR6

12 3dB TYICAL AKING SID LOAD ULL CONTOURS 94 MHz RAL (Ω) Figure 24. 3dB Load ull Output ower Contours (dbm) RAL (Ω) Figure 25. 3dB Load ull fficiency Contours (%) RAL (Ω) RAL (Ω) Figure 26. 3dB Load ull Gain Contours (db) Figure 27. 3dB Load ull AM/M Contours NOT: = Maximum Output ower Gain Drain fficiency Linearity Output ower = Maximum Drain fficiency AFT9H3 3SR6 AFT9H3 4GSR6 2

13 ACKAG DIMNSIONS AFT9H3 3SR6 AFT9H3 4GSR6 3

14 AFT9H3 3SR6 AFT9H3 4GSR6 4

15 AFT9H3 3SR6 AFT9H3 4GSR6 5

16 AFT9H3 3SR6 AFT9H3 4GSR6 6

17 RODUCT DOCUMNTATION, SOFTWAR AND TOOLS Refer to the following documents, software and tools to aid your design process. Application Notes AN955: Thermal Measurement Methodology of RF ower Amplifiers ngineering Bulletins B22: Using Data Sheet Impedances for RF LDMOS Devices Software lectromigration MTTF Calculator RF High ower Model.s2p File Development Tools rinted Circuit Boards For Software and Tools, do a art Number search at and select the art Number link. Go to the Software & Tools tab on the part s roduct Summary page to download the respective tool. The following table summarizes revisions to this document. RVISION HISTORY Revision Date Description July 23 Initial Release of Data Sheet Sept. 23 On Characteristics table, Side B (eaking): corrected V GS(th) Typ value from 2. to.5 Vdc, p. 2 AFT9H3 3SR6 AFT9H3 4GSR6 7

18 How to Reach Us: Home age: freescale.com Web Support: freescale.com/support Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. Freescale reserves the right to make changes without further notice to any products herein. Freescale makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters that may be provided in Freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including typicals, must be validated for each customer application by customer s technical experts. Freescale does not convey any license under its patent rights nor the rights of others. Freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/salestermsandconditions. Freescale and the Freescale logo are trademarks of, Reg. U.S. at. & Tm. Off. Airfast is a trademark of All other product or service names are the property of their respective owners. 23 AFT9H3 3SR6 AFT9H3 4GSR6 Document Number: AFT9H3 3S Rev. 8, 9/23

RF Power LDMOS Transistors N Channel Enhancement Mode Lateral MOSFETs

RF Power LDMOS Transistors N Channel Enhancement Mode Lateral MOSFETs Freescale Semiconductor Technical Data Document Number: AFT23S160W02S Rev. 0, 11/2013 RF ower LDMOS Transistors N Channel nhancement Mode Lateral MOSFTs These 45 watt RF power LDMOS transistors are designed