RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs

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1 Freescale Semiconductor Technical Data Document Number: AFT26HW5S Rev. 2, 7/213 RF ower LDMOS Transistors N--Channel nhancement--mode Lateral MOSFTs These 9 watt asymmetrical Doherty RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2496 to 269 MHz. Typical Doherty Single--Carrier W--CDMA erformance: V DD =28Volts, I DQA = 1 ma, V GSB =1.4Vdc, out = 9 Watts Avg., Input Signal AR = 9.9 robability on CCDF. Frequency G ps (db) (%) Output AR (db) ACR (dbc) AFT26HW5SR3 AFT26HW5GSR3 AFT26H5W26SR MHz, 9 W AVG., 28 V 262 MHz MHz MHz Features Advanced High erformance In--ackage Doherty esigned for Wide Instantaneous Bandwidth Applications Greater Negative Gate--Source Voltage Range for Improved Class C Operation esigned for Digital redistortion rror Correction Systems In Tape and Reel. R3 Suffix = 25 Units, 44 mm Tape Width, 13--inch Reel. NI -78GS -4L4L AFT26HW5GSR3 NI -78S -4L4S AFT26HW5SR3 NI -78S -4L4L AFT26H5W26SR3 N.C. RF ina /V GSA 1 8 Carrier 2 7 VBW A (1) RF outa /V DSA RF inb /V GSB N.C. 3 6 eaking 4 5 (Top View) RF outb /V DSB VBW B (1) Figure 1. in Connections 1. Device can operate with the V DD current supplied through pin 5 and pin 8., 213. All rights reserved. AFT26HW5SR3 AFT26HW5GSR3 AFT26H5W26SR3 1

2 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage V DSS --.5, +65 Vdc Gate--Source Voltage V GS --6., +1 Vdc Operating Voltage V DD 32, + Vdc Storage Temperature Range T stg --65 to +15 C Case Operating Temperature Range T C --4 to +15 C Operating Junction Temperature Range (1,2) T J --4 to +225 C Table 2. Thermal Characteristics Characteristic Symbol Value (2,3) Unit Thermal Resistance, Junction to Case Case Temperature 72 C, 9 W W--CDMA, 28 Vdc, I DQA = 1 ma, V GSB = 2.8 Vdc, 2655 MHz R JC.75 C/W Table 3. SD rotection Characteristics Test Methodology Human Body Model (per JSD22--A114) Machine Model (per IA/JSD22--A115) Charge Device Model (per JSD22--C11) Class 1C A III Table 4. lectrical Characteristics (T A =25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Off Characteristics (4) Zero Gate Voltage Drain Leakage Current (V DS =65Vdc,V GS =Vdc) Zero Gate Voltage Drain Leakage Current (V DS =28Vdc,V GS =Vdc) Gate--Source Leakage Current (V GS =5Vdc,V DS =Vdc) I DSS 1 Adc I DSS 1 Adc I GSS 1 Adc On Characteristics - Side A (4) Gate Threshold Voltage (V DS =1Vdc,I D =18 Adc) Gate Quiescent Voltage (V DS =28Vdc,I DA = 1 ma) Gate Quiescent Voltage (5) (V DD =28Vdc,I DA = 1 ma, Measured in Functional Test) Drain--Source On--Voltage (V GS =1Vdc,I D =.18Adc) V GS(th) Vdc V GSA(Q) 2.85 Vdc V GGA(Q) Vdc V DS(on) Vdc On Characteristics - Side B (4) Gate Threshold Voltage (V DS =1Vdc,I D =36 Adc) Gate Quiescent Voltage (V DS =28Vdc) Gate Quiescent Voltage (5) (V DD = 28 Vdc, Measured in Functional Test) Drain--Source On--Voltage (V GS =1Vdc,I D =.36Adc) V GS(th) Vdc V GSB(Q) 1.4 Vdc V GGB(Q) 2.8 Vdc V DS(on) Vdc 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF ower Amplifiers. Go to Select Documentation/Application Notes -- AN ach side of device measured separately. 5. V GG =2 V GS(Q). arameter measured on Freescale test fixture, due to resistor divider network on the board. Refer to test fixture layout. (continued) AFT26HW5SR3 AFT26HW5GSR3 AFT26H5W26SR3 2

3 Table 4. lectrical Characteristics (T A =25 C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Functional Tests (1,2,3) (In Freescale Doherty Test Fixture, 5 ohm system) V DD =28Vdc,I DQA = 1 ma, V GSB =1.4Vdc, out =9WAvg., f = 269 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal AR = 9.9 robability on CCDF. ACR measured in 3.84 MHz Channel 5 MHzOffset. ower Gain G ps db Drain fficiency % Output eak--to--average robability on CCDF AR db Adjacent Channel ower Ratio ACR dbc Load Mismatch (In Freescale Test Fixture, 5 ohm system) I DQA = 1 ma, f = 2655 MHz VSWR 1:1 at 32 Vdc, 35 W CW Output ower (3 db Input Overdrive from 7 W CW Rated ower) No Device Degradation Typical erformances (2) (In Freescale Doherty Test Fixture, 5 ohm system) V DD =28Vdc,I DQA = 1 ma, V GSB =1.4Vdc, MHz Bandwidth 1 db Compression oint, CW 1dB 42 W 3 db Compression oint (4) 3dB 54 W AM/M (Maximum value measured at the 3dB compression point across the MHz frequency range) 35 VBW Resonance oint (5) (IMD Third Order Intermodulation Inflection oint) VBW res 13 MHz Gain Flatness in 7 MHz out =9WAvg. G F.7 db Gain Variation over Temperature (--3 C to+85 C) Output ower Variation over Temperature (--3 C to+85 C) G.14 db/ C 1dB.7 db/ C 1. art internally matched both on input and output. 2. Measurements made with device in an asymmetrical Doherty configuration. 3. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull wing (GS) parts. 4. 3dB = avg + 7. db where avg is the average output power measured using an unclipped W--CDMA single--carrier input signal where output AR is compressed to 7. probability on CCDF. 5. Measured using gull wing formed part in AFT26HW5GS characterization test fixture. See Appendix, p. 17. AFT26HW5SR3 AFT26HW5GSR3 AFT26H5W26SR3 3

4 V GGA R4 AFT26HW5S Rev. 5 V DDA R3 C1* C12 C1 C3 R7 C17 C18 C19 C14 Z1 R1, R2** C2* C4 C11 C13 R8 CUT OUT ARA C C2 C21 C5 C6 C7 C15 C9* C8* R5 R6 V GGB C16 V DDB *C1, C2, C8 and C9 are mounted vertically. **R1 and R2 are stacked. Figure 2. AFT26HW5SR3 Test Circuit Component Layout Table 5. AFT26HW5SR3 Test Circuit Component Designations and Values art Description art Number Manufacturer C1, C2, C8, C9, C1, C11, 3.9 pf Chip Capacitors ATC1B3R9BT5XT ATC C14, C15 C3.4 pf Chip Capacitor ATC1BR4BT5XT ATC C4.3 pf Chip Capacitor ATC1BR3BT5XT ATC C5, C6.2 pf Chip Capacitors ATC1BR2BT5XT ATC C7.1 pf Chip Capacitor ATC1BR1BT5XT ATC C12, C F Chip Capacitors C4532X7S2A475M23KB TDK C16, C17 1 F Chip Capacitors C575X7S2A16M23KB TDK C18, C19, C2, C21 1. F Chip Capacitors 1265G15ZAT2A AVX R1, R2 1, 1/4 W Chip Resistors WCR126-1RFI Welwyn R3, R4, R5, R6 1 k, 1/4 W Chip Resistors WCR126-1KFI Welwyn R7, R8 4.7, 1/4 W Chip Resistors WCR126-4R7FI Welwyn Z MHz Band, 9, 5 db Hybrid Coupler X3C251-5S Anaren CB.3, r =3.5 RF35A2 Taconic AFT26HW5SR3 AFT26HW5GSR3 AFT26H5W26SR3 4

5 G ps, OWR GAIN (db) TYICAL CHARACTRISTICS V DD =28Vdc, out =9W(Avg.) I DQA = 1 ma, V GSB =2.8Vdc Single--Carrier W--CDMA ARC --3 ACR MHz Channel Bandwidth, Input Signal AR = 9.9 robability on CCDF f, FRQUNCY (MHz) Figure 3. Single -Carrier Output eak -to -Average Ratio Compression (ARC) Broadband out = 9 Watts Avg. G ps , DRAIN FFICINCY (%) ACR (dbc) ARC (db) IMD, INTRMODULATION DISTORTION (dbc) V DD =28Vdc, out = 4 W () I DQA = 1 ma, V GSB =2.8Vdc Two--Tone Measurements (f1 + f2)/2 = Center Frequency of 2655 MHz IM5--L IM5--U IM7--U IM7--L IM3--L IM3--U TWO--TON SACING (MHz) Note: Measured using gull wing formed part in AFT26HW5GS characterization test fixture. See Appendix, p. 17. Figure 4. Intermodulation Distortion roducts versus Two -Tone Spacing G ps, OWR GAIN (db) OUTUT COMRSSION AT.1% ROBABILITY ON CCDF (db) dB=9W --1dB=6W --3 db = 12 W V DD =28Vdc,I DQA = 1 ma V GSB = 2.8 Vdc, f = 2655 MHz ARC --5 Single--Carrier W--CDMA 3.84 MHz Channel 2 Bandwidth, Input Signal AR = robability on CCDF G ps ACR RAIN FFICINCY (%) ACR (dbc) out, OUTUT OWR (WATTS) Figure 5. Output eak -to -Average Ratio Compression (ARC) versus Output ower AFT26HW5SR3 AFT26HW5GSR3 AFT26H5W26SR3 5

6 TYICAL CHARACTRISTICS G ps, OWR GAIN (db) V DD =28Vdc,I DQA = 1 ma, V GSB =2.8Vdc 262 MHz 2655 MHz 269 MHz 262 MHz 2655 MHz 2655 MHz out, OUTUT OWR (WATTS) AVG. ACR 269 MHz Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Input Signal G ps 2 AR = 9.9 robability on CCDF Figure 6. Single -Carrier W -CDMA ower Gain, Drain fficiency and ACR versus Output ower 262 MHz 269 MHz , DRAIN FFICINCY (%) ACR (dbc) GAIN (db) V DD =28Vdc in =dbm I DQA = 1 ma V GSB =2.8Vdc Gain f, FRQUNCY (MHz) Figure 7. Broadband Frequency Response AFT26HW5SR3 AFT26HW5GSR3 AFT26H5W26SR3 6

7 f (MHz) Z source V DD =28Vdc,I DQA = 87 ma, ulsed CW, 1 sec(on), 1% Duty Cycle Z in Max Output ower 1dB Z (1) load Gain (db) (dbm) (W) j j j j j j j j j (%) AM/M f (MHz) Z source Z in Max Output ower 3dB Z (2) load Gain (db) (dbm) (W) j j j j j j j j j (1) Load impedance for optimum 1dB power. (2) Load impedance for optimum 3dB power. Z source = Measured impedance presented to the input of the device at the package reference plane. Z in = Impedance as measured from gate contact to ground. Z load = Measured impedance presented to the output of the device at the package reference plane. Figure 8. Carrier Side Load ull erformance Maximum ower Tuning (%) AM/M f (MHz) Z source V DD =28Vdc,I DQA = 87 ma, ulsed CW, 1 sec(on), 1% Duty Cycle Z in Max Drain fficiency 1dB Z (1) load Gain (db) (dbm) (W) j j j j j j j j j (%) AM/M f (MHz) Z source Z in Max Drain fficiency 3dB Z (2) load Gain (db) (dbm) (W) j j j j j j j j j (1) Load impedance for optimum 1dB efficiency. (2) Load impedance for optimum 3dB efficiency. Z source = Measured impedance presented to the input of the device at the package reference plane. Z in = Impedance as measured from gate contact to ground. Z load = Measured impedance presented to the output of the device at the package reference plane. Figure 9. Carrier Side Load ull erformance Maximum Drain fficiency Tuning (%) AM/M Input Load ull Tuner and Test Circuit Device Under Test Output Load ull Tuner and Test Circuit Z source Z in Z load AFT26HW5SR3 AFT26HW5GSR3 AFT26H5W26SR3 7

8 f (MHz) Z source V DD =28Vdc,V GSB = 1.4 Vdc, ulsed CW, 1 sec(on), 1% Duty Cycle Z in Max Output ower 1dB Z (1) load Gain (db) (dbm) (W) j j j j j j j j j (%) AM/M f (MHz) Z source Z in Max Output ower 3dB Z (2) load Gain (db) (dbm) (W) j j j j j j j j j (1) Load impedance for optimum 1dB power. (2) Load impedance for optimum 3dB power. Z source = Measured impedance presented to the input of the device at the package reference plane. Z in = Impedance as measured from gate contact to ground. Z load = Measured impedance presented to the output of the device at the package reference plane. Figure 1. eaking Side Load ull erformance Maximum ower Tuning (%) AM/M f (MHz) Z source V DD =28Vdc,V GSB = 1.4 Vdc, ulsed CW, 1 sec(on), 1% Duty Cycle Z in Max Drain fficiency 1dB Z (1) load Gain (db) (dbm) (W) j j j j j j j j j (%) AM/M f (MHz) Z source Z in Max Drain fficiency 3dB Z (2) load Gain (db) (dbm) (W) j j j j j j j j j (1) Load impedance for optimum 1dB efficiency. (2) Load impedance for optimum 3dB efficiency. Z source = Measured impedance presented to the input of the device at the package reference plane. Z in = Impedance as measured from gate contact to ground. Z load = Measured impedance presented to the output of the device at the package reference plane. Figure 11. eaking Side Load ull erformance Maximum Drain fficiency Tuning (%) AM/M Input Load ull Tuner and Test Circuit Device Under Test Output Load ull Tuner and Test Circuit Z source Z in Z load AFT26HW5SR3 AFT26HW5GSR3 AFT26H5W26SR3 8

9 1dB - TYICAL CARRIR SID LOAD ULL CONTOURS 2655 MHz IMAGINARY IMAGINARY RAL Figure 12. 1dB Load ull Output ower Contours (dbm) RAL Figure 13. 1dB Load ull fficiency Contours (%) 2 2 IMAGINARY IMAGINARY RAL Figure 14. 1dB Load ull Gain Contours (db) RAL Figure 15. 1dB Load ull AM/M Contours NOT: = Maximum Output ower ower Gain Drain fficiency Linearity Output ower = Maximum Drain fficiency AFT26HW5SR3 AFT26HW5GSR3 AFT26H5W26SR3 9

10 3dB - TYICAL CARRIR SID LOAD ULL CONTOURS 2655 MHz IMAGINARY RAL Figure 16. 3dB Load ull Output ower Contours (dbm) IMAGINARY RAL Figure 17. 3dB Load ull fficiency Contours (%) 2 2 IMAGINARY IMAGINARY RAL Figure 18. 3dB Load ull Gain Contours (db) RAL Figure 19. 3dB Load ull AM/M Contours NOT: = Maximum Output ower ower Gain Drain fficiency Linearity Output ower = Maximum Drain fficiency AFT26HW5SR3 AFT26HW5GSR3 AFT26H5W26SR3 1

11 1dB - TYICAL AKING SID LOAD ULL CONTOURS 2655 MHz IMAGINARY RAL Figure 2. 1dB Load ull Output ower Contours (dbm) IMAGINARY RAL Figure 21. 1dB Load ull fficiency Contours (%) IMAGINARY IMAGINARY RAL Figure 22. 1dB Load ull Gain Contours (db) RAL --3 Figure 23. 1dB Load ull AM/M Contours NOT: = Maximum Output ower ower Gain = Maximum Drain fficiency Drain fficiency Linearity Output ower AFT26HW5SR3 AFT26HW5GSR3 AFT26H5W26SR3 11

12 3dB - TYICAL AKING SID LOAD ULL CONTOURS 2655 MHz IMAGINARY RAL Figure 24. 3dB Load ull Output ower Contours (dbm) IMAGINARY RAL Figure 25. 3dB Load ull fficiency Contours (%) IMAGINARY IMAGINARY RAL Figure 26. 3dB Load ull Gain Contours (db) RAL Figure 27. 3dB Load ull AM/M Contours NOT: = Maximum Output ower ower Gain Drain fficiency Linearity Output ower = Maximum Drain fficiency AFT26HW5SR3 AFT26HW5GSR3 AFT26H5W26SR3 12

13 ACKAG DIMNSIONS AFT26HW5SR3 AFT26HW5GSR3 AFT26H5W26SR3 13

14 AFT26HW5SR3 AFT26HW5GSR3 AFT26H5W26SR3 14

15 AFT26HW5SR3 AFT26HW5GSR3 AFT26H5W26SR3 15

16 AFT26HW5SR3 AFT26HW5GSR3 AFT26H5W26SR3 16

17 AFT26HW5SR3 AFT26HW5GSR3 AFT26H5W26SR3 17

18 AFT26HW5SR3 AFT26HW5GSR3 AFT26H5W26SR3 18

19 ANDIX V GGA C5 C4 AFT26HW5GS Rev. 5 V DDA C8 C2 C14 R2 C C3 C16 C11 C17 R1 Z1 C1 C13 R3 C15 C1 C12 C9 C7 C6 V GGB V DDB Figure A -1. AFT26HW5GSR3 Characterization Test Circuit Component Layout Table A -1. AFT26HW5GSR3 Characterization Test Circuit Component Designations and Values art Description art Number Manufacturer C1 3.3 pf Chip Capacitor 851J3R3CBTTR AVX C2, C4, C7, C1, C pf Chip Capacitors 851J4R7CBTTR AVX C3, C12, C13, C15.5 pf Chip Capacitors 851JR5BBTTR AVX C5, C6 4.7 F Chip Capacitors C4532X7S2A475M23KB TDK C8, C9 3.3 F Chip Capacitors C3225X7S2A335M2AB TDK C14, C17.2 pf Chip Capacitors 851JR2ABTTR AVX C16.1 pf Chip Capacitor 851JR1ABTTR AVX R1 51, 1/4 W Chip Resistor WCR126-51FI Welwyn R2, R3 4.7, 1/8 W Chip Resistors WCR85--4R7FI Welwyn Z MHz Band, 9, 5 db Hybrid Coupler X3C251-5S Anaren CB.3, r =3.5 RF35A2 Taconic AFT26HW5SR3 AFT26HW5GSR3 AFT26H5W26SR3 19

20 RODUCT DOCUMNTATION, SOFTWAR AND TOOLS Refer to the following documents, software and tools to aid your design process. Application Notes AN1955: Thermal Measurement Methodology of RF ower Amplifiers ngineering Bulletins B212: Using Data Sheet Impedances for RF LDMOS Devices Software lectromigration MTTF Calculator RF High ower Model.s2p File Development Tools rinted Circuit Boards For Software and Tools, do a art Number search at and select the art Number link. Go to the Software & Tools tab on the part s roduct Summary page to download the respective tool. RVISION HISTORY The following table summarizes revisions to this document. Revision Date Description May 213 Initial Release of Data Sheet 1 June 213 Added part number AFT26H5W26SR3, p. 1 Added NI--78S--4L4L package isometric, p. 1, and Mechanical Outline, p. 17, 18 2 July 213 AFT26HW5S data sheet frequency changed from 262 MHz to 2496 MHz to show part performance capability in the MHz frequency range, p. 1 Fig. 3, Single--Carrier Output eak--to--average Ratio Compression (ARC) Broadband out = 9 Watts Avg., updated to reflect part performance in the MHz frequency range, p. 5 AFT26HW5SR3 AFT26HW5GSR3 AFT26H5W26SR3 2

21 How to Reach Us: Home age: freescale.com Web Support: freescale.com/support Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. Freescale reserves the right to make changes without further notice to any products herein. Freescale makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters that may be provided in Freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including typicals, must be validated for each customer application by customer s technical experts. Freescale does not convey any license under its patent rights nor the rights of others. Freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/salestermsandconditions. Freescale and the Freescale logo are trademarks of, Reg. U.S. at. & Tm. Off. Airfast is a trademark of All other product or service names are the property of their respective owners. 213 Document RF Device Number: DataAFT26HW5S Rev. Freescale 2, 7/213Semiconductor, Inc. AFT26HW5SR3 AFT26HW5GSR3 AFT26H5W26SR3 21

RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs

RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs Freescale Semiconductor Technical Data Document Number: AFT21H35W3S Rev., 9/213 RF ower LDMOS Transistors N--Channel nhancement--mode Lateral MOSFTs These 63 watt asymmetrical Doherty RF power LDMOS transistors