RF LDMOS Wideband Integrated Power Amplifier

Transcription

1 Freescale Semiconductor Technical Data Document Number: Rev. 0, 1/2016 RF LDMOS Wideband Integrated Power Amplifier The is a 2--stage, high gain amplifier designed to provide a high level of flexibility to the amplifier designer. The device is unmatched even at the interstage, allowing performance to be optimized for any frequency in the 1.8 to 1000 MHz range. The high gain, ruggedness and wideband performance of this device make it ideal for use as a pre--driver and driver in a wide range of industrial, medical and communications applications MHz, dbm, 7.5 V AIRFAST RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIER Typical Narrowband Performance (7.5 Vdc, T A =25C, CW) Frequency (MHz) G ps (db) D (%) P out (dbm) 520 (1) Typical Wideband Performance (7.5 Vdc, T A =25C, CW) Frequency (MHz) P in (dbm) G ps (db) D (%) P out (dbm) (2,5) QFN (3,5) (4,5) Load Mismatch/Ruggedness Frequency (MHz) Signal Type VSWR 175 (2) CW > 25:1 at all Phase Angles 520 (3) Pin (W) 3dB Overdrive from rated power Test Voltage Result 9 No Device Degradation 1. Measured in 520 MHz narrowband test circuit. 2. Measured in MHz VHF broadband reference circuit. 3. Measured in MHz UHF broadband reference circuit. 4. Measured in MHz broadband reference circuit. 5. The values shown are the center band performance numbers across the indicated frequency range. Features Characterized for Operation from 1.8 to 1000 MHz Unmatched Input, Interstage and Output Allowing Wide Frequency Range Utilization Integrated ESD Protection Same PCB Layout Can be Used for MHz, MHz and MHz Designs. 24--pin, 4 mm QFN Plastic Package Typical Applications Driver for Mobile Radio Power Amplifiers Output Stage for Low Power Handheld Radios Driver for Communications and Industrial Systems GND 1 GND 2 N.C. 3 Drain B 4 Drain B 5 Drain B 6 Note: Exposed backside of the package is the source terminal for the transistors. RF in Gate A Gate A N.C. N.C. Drain A Drain A N.C. N.C. N.C. N.C. N.C. N.C. Figure 1. Pin Connections Stage 1 Stage 1 Stage 2 External Interstage Match Stage 2 Figure 2. Typical Application 18 GND 17 GND 16 N.C. 15 Gate B 14 Gate B 13 Gate B RF out, All rights reserved. 1

2 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage V DSS 0.5, + Vdc Gate--Source Voltage V GS 6.0, +12 Vdc Storage Temperature Range T stg 65 to +150 C Case Operating Temperature Range T C 40 to +150 C Operating Junction Temperature Range (1,2) T J 40 to +150 C Table 2. Thermal Characteristics Thermal Resistance, Junction to Case Case Temperature 78C, dbm CW, 520 MHz Stage 1, 7.5 Vdc, I DQ1 =8mA Stage 2, 7.5 Vdc, I DQ2 =24mA Table 3. ESD Protection Characteristics Human Body Model (per JESD22--A114) Machine Model (per EIA/JESD22--A115) Characteristic Symbol Value (2,3) Unit Test Methodology Charge Device Model (per JESD22--C101) Table 4. Moisture Sensitivity Level R JC Class 1A, passes 250 V A II, passes 200 V Test Methodology Rating Package Peak Temperature Unit Per JESD22--A113, IPC/JEDEC J--STD C 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to and search for AN1955. C/W 2

3 Table 5. Electrical Characteristics (T A =25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Stage 1 - Off Characteristics (1) Zero Gate Voltage Drain Leakage Current (V DS =Vdc,V GS =0Vdc) I DSS 1 Adc Drain--Source Breakdown Voltage (V GS =0Vdc,I D =1Adc) Gate--Source Leakage Current (V GS =5Vdc,V DS =0Vdc) V (BR)DSS 37 Vdc I GSS 500 nadc Stage 1 - On Characteristics (1) Gate Threshold Voltage (V DS =10Vdc,I D =6Adc) Drain--Source On--Voltage (V GS =10Vdc,I D =46mAdc) Forward Transconductance (V DS =7.5Vdc,I D =0.1Adc) Stage 2 - Off Characteristics (1) Zero Gate Voltage Drain Leakage Current (V DS =Vdc,V GS =0Vdc) Drain--Source Breakdown Voltage (V GS =0Vdc,I D =1Adc) Gate--Source Leakage Current (V GS =5Vdc,V DS =0Vdc) Stage 2 - On Characteristics (1) Gate Threshold Voltage (V DS =10Vdc,I D =25Adc) Drain--Source On--Voltage (V GS =10Vdc,I D = 380 madc) Forward Transconductance (V DS =7.5Vdc,I D =1.1Adc) V GS(th) Vdc V DS(on) 0.24 Vdc g fs S I DSS 1 Adc V (BR)DSS 37 Vdc I GSS 500 nadc V GS(th) Vdc V DS(on) 0.23 Vdc g fs 1.1 S Functional Tests (In Freescale Narrowband Test Fixture, 50 ohm system) V DD =7.5Vdc,I DQ1 =8mA,I DQ2 =24mA, P in = 1dBm,f=520MHz Output Power P out 31.2 dbm Power Gain G ps 32.2 db Drain Efficiency D 73.0 % Table 6. Ordering Information Device Tape and Reel Information Package T1 T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel QFN Each side of device measured separately. 3

4 MHz VHF BROADBAND REFERENCE CIRCUIT Table MHz VHF Broadband Performance (In Freescale Reference Circuit, 50 ohm system) V DD =7.5Vdc,I DQ1 =10mA,I DQ2 =ma Frequency (MHz) P in (dbm) G ps (db) D (%) P out (dbm) Table 8. Load Mismatch/Ruggedness (In Freescale MHz Reference Circuit, 50 ohm system) I DQ1 =10mA,I DQ2 =ma Frequency (MHz) Signal Type VSWR 175 CW > 25:1 at all Phase Angles P in (W) Test Voltage, V DD Result 3 db Overdrive from rated power 9 No Device Degradation 4

5 MHz VHF BROADBAND REFERENCE CIRCUIT (2.11 cm 4.72 cm) J1 C1 V G1 P1 R1 C3 C4 C5 C6 L3 L4 C9 R9 R6 C11 C12 V G2 P2 R7 R8 C17 R2 C10 C15 C2 L1 L2 R3 C7 R4 R5 C8 Rev. 0 Q1 L5 C13 C14 L6 B1 C16 R10 D75372 Figure 3. VHF Broadband Reference Circuit Component Layout MHz Table 9. VHF Broadband Reference Circuit Component Designations and Values MHz Part Description Part Number Manufacturer B1 RF Bead Y0 Fair-Rite C1, C5, C9, C12, C14, C pf Chip Capacitors C2012X7R2E102M085AA TDK C2, C16 15 pf Chip Capacitors GQM2195C2E150FB12D Murata C3 1 F Chip Capacitor GRM21BR71H105KA12L Murata C4, C6, C7, C8, C11, C pf Chip Capacitors GQM2195C2E101GB12D Murata C pf Chip Capacitor GQM2195C2E6R2BB12D Murata C15 10 F Chip Capacitor GRM31CR61H106KA12L Murata J1 Right-Angle Breakaway Headers (3 Pins) Molex L1, L4 56 nh Inductors LL1608-FSL56NJ TOKO L2 180 nh Inductor LL1608-FSLR18J TOKO L3 120 nh Inductor LL1608-FSLR12J TOKO L5 180 nh Inductor 1008CS-181XJLB Coilcraft L nh Inductor 0806SQ15N Coilcraft P1, P2 5.0 k Multi-turn Cermet Trimmer Potentiometer 3224W-1-502E Bourns Q1 RF Power LDMOS Amplifier T1 Freescale R1, R7 15 k, 1/10 W Chip Resistors RR1220P-153-B-T5 Susumu R2, R8 10 k, 1/8 W Chip Resistors CRCW080510K0FKEA Vishay R3 200, 1/8 W Chip Resistor CRCW RJNEA Vishay R4, R6 1.2 k, 1/8 W Chip Resistors CRCW08051K20FKEA Vishay R5 510, 1/10 W Chip Resistor RR1220P-511-B-T5 Susumu R9, R10 0, 2.5 A Chip Resistors CWCR Z0EA Vishay PCB FR4 (S--1000), 0.020, r =4.8 D75372 MTL 5

6 TYPICAL CHARACTERISTICS MHz VHF BROADBAND REFERENCE CIRCUIT G ps, POWER GAIN (db) D G ps P out V DD =7.5V,P in =0dBm,I DQ1 =10mA,I DQ2 =ma 155 FREQUENCY (MHz) Figure 4. Power Gain, Drain Efficiency and Output Power versus Frequency at a Constant Input Power D, DRAIN EFFICIENCY (%) P out,output POWER (dbm) Pout, OUTPUT POWER (WATTS) 2.5 V DD =7.5V,I DQ1 =10mA,f=155MHz P in =0dBm P 0.5 in = 3dBm Detail A V GS2, GATE--SOURCE VOLTAGE (VOLTS) 4.0 Pout, OUTPUT POWER (WATTS) 0.5 V DD =7.5V,I DQ1 =10mA,f=155MHz 0.25 P in =0dBm 0 P in = 3dBm V GS2, GATE--SOURCE VOLTAGE (VOLTS) Detail A Figure 5. Output Power versus Gate -Source Voltage, 2nd Stage G ps, POWER GAIN (db) D MHz MHz MHz MHz G ps 155 MHz 135 MHz MHz 28 P MHz out MHz V DD =7.5Vdc,l DQ1 =10mA,l DQ2 =ma P in, INPUT POWER (dbm) Figure 6. Power Gain, Drain Efficiency and Output Power versus Input Power and Frequency D, DRAIN EFFICIENCY (%) P out,output POWER (dbm) 6

7 MHz VHF BROADBAND REFERENCE CIRCUIT Z o =75 f = 135 MHz Z interstage_out f = 175 MHz f = 135 MHz Z source f = 175 MHz f = 135 MHz f = 135 MHz Z interstage_in f = 175 MHz f = 175 MHz Z load f MHz Z source1 Z load1 Z source2 Z load j j j j j j j j j j j j j j j j j j j j j j j j j j j j j j j j j j j j3.49 Z source = Test circuit impedance as measured from gate to gate. Z load = Test circuit impedance as measured from drain to drain. 50 Input Matching Network Stage 1 Interstage Matching Network Stage 2 Output Matching Network 50 Z source1 Z load1 Z source2 Z load2 Figure 7. VHF Broadband Series Equivalent Source and Load Impedance MHz 7

8 MHz UHF BROADBAND REFERENCE CIRCUIT Table MHz UHF Broadband Performance (In Freescale Reference Circuit, 50 ohm system) V DD =7.5Vdc,I DQ1 =10mA,I DQ2 =ma Frequency (MHz) P in (dbm) G ps (db) D (%) P out (dbm) Table 11. Load Mismatch/Ruggedness (In Freescale MHz Reference Circuit, 50 ohm system) I DQ1 = 100 ma, I DQ2 =ma Frequency (MHz) Signal Type VSWR 520 CW > 25:1 at all Phase Angles P in (W) Test Voltage, V DD Result 3 db Overdrive from rated power 9 No Device Degradation 8

9 MHz UHF BROADBAND REFERENCE CIRCUIT (2.11 cm 4.72 cm) J1 V G1 R2 C4 C5 V G2 R8 L1 R1 C2 C1 P1 R3 C6 L4 L5 C7 C11 C10 R7 C12 C13 P2 C16 R9 C18 L2 C3 L3 R4 C8 R5 C9 R6 Rev. 0 Q1 R10 L6 C14 C15 L7 B1 R11 C17 D75372 Figure 8. UHF Broadband Reference Circuit Component Layout MHz Table 12. UHF Broadband Reference Circuit Component Designations and Values MHz Part Description Part Number Manufacturer B1 RF Bead Y0 Fair-Rite C1, C5, C7, C9, C10, C12, C14, C pf Chip Capacitors GQM2195C2E101GB12D Murata C2 10 pf Chip Capacitor GQM2195C2E100FB12D Murata C3 12 pf Chip Capacitor GQM2195C2E120FB12D Murata C4 1 F Chip Capacitor GRM21BR71H105KA12L Murata C6, C13, C pf Chip Capacitors C2012X7R2E102M085AA TDK C8 39 pf Chip Capacitor GQM2195C2E390GB12D Murata C pf Chip Capacitor GQM2195C2E4R7BB12D Murata C16 10 F Chip Capacitor GRM31CR61H106KA12L Murata C pf Chip Capacitor GQM2195C2E6R8BB12D Murata J1 Right-Angle Breakaway Headers (3 Pins) Molex L1, L4 120 nh Inductors LL1608-FSLR12J TOKO L2 12 nh Inductor LL1608-FSL12NJ TOKO L3 39 nh Inductor LL1608-FSL39NJ TOKO L5 15 nh Inductor LL1608-FSL15NJ TOKO L6 25 nh Inductor 0908SQ25N Coilcraft L7 8.1 nh Inductor 0908SQ8N1 Coilcraft P1, P2 5.0 k Multi-turn Cermet Trimmer Potentiometer 3224W-1-502E Bourns Q1 RF Power LDMOS Amplifier T1 Freescale R1 51, 1/4 W Chip Resistor SG73P2ATTD51R0F KOA Speer R2, R8 15 k, 1/10 W Chip Resistors RR1220P-153-B-T5 Susumu R3, R9 10 k, 1/8 W Chip Resistors CRCW080510K0FKEA Vishay R4 200, 1/8 W Chip Resistor CRCW RJNEA Vishay R5, R7 1.2 k, 1/8 W Chip Resistors CRCW08051K20FKEA Vishay R6 2.2 k, 1/8 W Chip Resistor CRCW08052K20JNEA Vishay R10, R11 0, 2.5 A Chip Resistors CWCR Z0EA Vishay PCB FR4 (S--1000), 0.020, r =4.8 D75372 MTL 9

10 TYPICAL CHARACTERISTICS MHz UHF BROADBAND REFERENCE CIRCUIT G ps, POWER GAIN (db) D V DD =7.5V,P in =3.0dBm,l DQ1 =10mA,l DQ2 =ma G ps P out FREQUENCY (MHz) Figure 10. Power Gain, Drain Efficiency and Output Power versus Frequency at a Constant Input Power D, DRAIN EFFICIENCY (%) P out,output POWER (dbm) P out, OUTPUT POWER (WATTS) V DD =7.5V,I DQ1 =10mA,f=435MHz P in =3dBm P in =0dBm Detail A V GS2, GATE--SOURCE VOLTAGE (VOLTS) Pout, OUTPUT POWER (WATTS) 0.5 V DD =7.5V,I DQ1 =10mA,f=435MHz 0.25 P in =3dBm P in =0dBm V GS2, GATE--SOURCE VOLTAGE (VOLTS) DETAIL A Figure 9. Output Power versus Gate -Source Voltage, 2nd Stage MHz 70 D MHz MHz MHz 20 G MHz ps MHz MHz P 25 out MHz MHz V DD =7.5Vdc,l DQ1 =10mA,l DQ2 =ma P in, INPUT POWER (dbm) Figure 11. Power Gain, Drain Efficiency and Output Power versus Input Power and Frequency G ps, POWER GAIN (db) D, DRAIN EFFICIENCY (%) P out,output POWER (dbm) 10

11 MHz UHF BROADBAND REFERENCE CIRCUIT f = 350 MHz Z o =75 Z source f = 520 MHz f = 350 MHz Z load f = 520 MHz Z interstage_out f = 350 MHz f = 520 MHz f = 350 MHz Z interstage_in f = 520 MHz f MHz Z source1 Z load1 Z source2 Z load j j j j j j j j j j j j j j j j j j j j j j j j j j j j j j j j j j j j j j j j j j j j j j j j j j j j j j j j j j j j j j j j j j j j j j j j12.5 Z source = Test circuit impedance as measured from gate to gate. Z load = Test circuit impedance as measured from drain to drain. 50 Input Matching Network Stage 1 Interstage Matching Network Stage 2 Output Matching Network 50 Z source1 Z load1 Z source2 Z load2 Figure 12. UHF Broadband Series Equivalent Source and Load Impedance MHz 11

12 520 MHz NARROWBAND TEST FIXTURE Table MHz Narrowband Performance V DD =7.5Vdc,I DQ1 =8mA,I DQ2 =24mA,P in = 1dBm,f=520MHz Characteristic Symbol Min Typ Max Unit Output Power P out 32.2 dbm Power Gain G ps 31.2 db Drain Efficiency D 73.0 % 12

13 520 MHz NARROWBAND TEST FIXTURE 3 5 (7.6 cm 12.7 cm) C7 C14 C19 C12 C13 D67108 C2 C10 C18 C20 L4 L3 R3 C3 R4 L7 L8 C1 L1 L2 R2 R1 L5 C4 C5 C6 C17 Rev. 0 C21 C23 C15 C16 C8 C9 C11 C22 Figure 13. Narrowband Test Circuit Component Layout 520 MHz Table 14. Narrowband Test Circuit Component Designations and Values 520 MHz Part Description Part Number Manufacturer C1 8.2 pf Chip Capacitor ATC600F8R2BT250XT ATC C2 240 pf Chip Capacitor ATC600F241JT250XT ATC C3 39 pf Chip Capacitor ATC600F390JT250XT ATC C4 15 pf Chip Capacitor ATC600F150JT250XT ATC C5 4.7 pf Chip Capacitor ATC600F4R7BT250XT ATC C6 12 pf Chip Capacitor ATC600F120JT250XT ATC C7, C8, C9, C10, C pf Chip Capacitors ATC600F241JT250XT ATC C12, C15 22 F, 35 V Tantalum Capacitors T491X226K035AT Kemet C13, C16, C19, C F Chip Capacitors C0805C104K1RACTU Kemet C14, C17, C18, C F Chip Capacitors C0805C103K5RACTU Kemet C20, C23 3 F, 35 V Electrolytic Capacitors MCGPR35V337M10X16-RH Multicomp L1, L7, L8 5.5 nh Inductors 0806SQ5N5 Coilcraft L nh Inductor 0806SQ12N Coilcraft L3, L4 22 nh Inductors 0807SQ22N Coilcraft L5 8.9 nh Inductor 0806SQ8N9 Coilcraft R1 8.2, 1/3 W Chip Resistor RL1220S-8R2-F Susumu R2 100, 1/4 W Chip Resistor CRCW RFKEA Vishay R3 1.0, 1/3 W Chip Resistor RL1220S-1R0-F Susumu R4 75, 1/4 W Chip Resistor SG73P2ATTD75R0F KOA Speer PCB Rogers R04350B, 0.0, r =3.66 D67108 MTL 13

14 TYPICAL CHARACTERISTICS 520 MHz NARROWBAND TEST FIXTURE P out, OUTPUT POWER (WATTS) V DD =7.5Vdc,f=520MHz,V GS1 =3Vdc P in =0dBm P in = 3dBm V GS2, GATE--SOURCE VOLTAGE (VOLTS) Figure 14. Output Power versus Gate -Source Voltage, 2nd Stage G ps, POWER GAIN (db) G ps D P out 20 V DD =7.5Vdc,I DQ1 =8mA,I DQ2 =24mA,f=520MHz P in, INPUT POWER (dbm) Figure 15. Power Gain, Drain Efficiency and Output Power versus Input Power D, DRAIN EFFICIENCY (%) P out OUTPUT POWER (dbm) f MHz Z source1 Z load1 Z source2 Z load j j j j11.4 Z source = Test circuit impedance as measured from gate to gate. Z load = Test circuit impedance as measured from drain to drain. 50 Input Matching Network Stage 1 Interstage Matching Network Stage 2 Output Matching Network 50 Z source1 Z load1 Z source2 Z load2 Figure 16. Narrowband Series Equivalent Source and Load Impedance 520 MHz 14

15 solder pad with thermal via structure. All dimensions in mm. Figure 17. PCB Pad Layout for 24 -Lead QFN 4 4 A901 WLYW Figure 18. Product Marking 15

16 PACKAGE DIMENSIONS 16

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19 PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following resources to aid your design process. Application Notes AN1955: Thermal Measurement Methodology of RF Power Amplifiers Software.s2p File Electromigration MTTF Calculator RF High Power Model Development Tools Printed Circuit Boards To Download Resources Specific to a Given Part Number: 1. Go to 2. Search by part number 3. Click part number link 4. Choose the desired resource from the drop down menu REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 0 Jan Initial Release of Data Sheet 19

20 How to Reach Us: Home Page: freescale.com Web Support: freescale.com/support Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. Freescale reserves the right to make changes without further notice to any products herein. Freescale makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters that may be provided in Freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including typicals, must be validated for each customer application by customer s technical experts. Freescale does not convey any license under its patent rights nor the rights of others. Freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/salestermsandconditions. Freescale and the Freescale logo are trademarks of, Reg. U.S. Pat. & Tm. Off. Airfast is a trademark of All other product or service names are the property of their respective owners. E 2016 Document Number: 20 Rev. 0, 1/2016