Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier

Transcription

1 Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier The MMZ9312B is a 2--stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station applications as well as an output stage in femtocell or repeater applications. It is suitable for applications with frequencies from 4 to 1 MHz such as CDMA, GSM, LTE and ZigBee R at operating voltages from 3 to 5 Volts. Typical Performance:,I CQ =74mA Document Number: MMZ9312B Rev. 2, 12/ MHz, 31.7 db 29.6 dbm InGaP HBT LINEAR AMPLIFIER Frequency P out (dbm) G ps (db) ACPR (dbc) PAE (%) Test Signal 9 MHz IS--95 CDMA 9 MHz C W--CDMA TM1 9 MHz MHz LTE TM MHz LTE 1/2 MHz QFN MHz ZigBee Features Frequency: 4--1 MHz P1dB: MHz Power Gain: MHz OIP3: 42 9 MHz Active Bias Control (adjustable externally) Single 3 to 5 V Supply Performs Well with Digital Predistortion Systems Single--ended Power Detector Cost--effective 12--pin, 3 mm QFN Surface Mount Package In Tape and Reel. T1 Suffix = 1, Units, 12 mm Tape Width, 7--inch Reel. Table 1. Typical Performance (1) Characteristic Symbol 45 MHz 9 MHz Unit Small--Signal Gain (S21) G p db Input Return Loss (S11) IRL db Output Return Loss (S22) ORL db Power 1dB Compression P1dB dbm Table 2. Maximum Ratings Rating Symbol Value Unit Supply Voltage V CC 6 V Supply Current I CC 55 ma RF Input Power P in 14 dbm Storage Temperature Range T stg --65 to +15 C Junction Temperature T J 175 C 1.,T A =, 5 ohm system, CW Application Circuit Table 3. Thermal Characteristics Characteristic Symbol Value (2) Unit Thermal Resistance, Junction to Case Case Temperature 84 C, R JC 56 C/W 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to Select Documentation/Application Notes -- AN1955., , 214. All rights reserved. 1

2 Table 4. Electrical Characteristics (V CC1 =V CC2 =V BIAS = 5 Vdc, 9 MHz, T A =, 5 ohm system, in Freescale CW Application Circuit) Characteristic Symbol Min Typ Max Unit Small--Signal Gain (S21) G p db Input Return Loss (S11) IRL db Output Return Loss (S22) ORL db Power 1dB Compression P1dB 29.6 dbm Third Order Output Intercept Point, Two--Tone CW OIP3 42 dbm Noise Figure NF 4 db Supply Current I CQ ma Supply Voltage V CC 5 V Table 5. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) Meets 2 V for all pins except: Pin 11 meets 4 V Pin 8 meets 2 V Class Rating Machine Model (per EIA/JESD22--A115) Charge Device Model (per JESD22--C11) Table 6. Moisture Sensitivity Level Test Methodology Rating Package Peak Temperature Unit Per JESD22--A113, IPC/JEDEC J--STD C A IV V BA2 V CC1 GND V BA1 BIAS CIRCUIT V CC2 V BA1 V BA2 V CC1 GND V CC2 V BIAS RF out V BIAS 2 8 RF out RF in 3 7 RF out RF in RF out GND GND P DET GND GND P DET Figure 1. Functional Block Diagram Figure 2. Pin Connections 2

3 V BIAS V CC1 R1 R2 C1 L4 C2 V CC L3 C3 1 BIAS CIRCUIT 9 C1 C5 2 8 L5 RF OUTPUT RF INPUT C11 L2 3 7 L P DET C4 Figure 3. MMZ9312B Test Circuit Schematic CDMA IS -95, 9 MHz, 5. V Table 7. MMZ9312B Test Circuit Component Designations and Values CDMA IS -95, 9 MHz, 5. V Part Description Part Number Manufacturer C1, C2 1 F Chip Capacitors GRM155R61A15KE15 Murata C3 4.7 F Chip Capacitor GRM188R6J475KE19 Murata C4 47 pf Chip Capacitor GRM1555C1H471JA1 Murata C5 1 pf Chip Capacitor GRM1555C1H11JA1 Murata C6, C7, C8, C9 Components Not Placed C1 4.7 pf Chip Capacitor 423J4R7BBSTR AVX C pf Chip Capacitor 423J6R8BBSTR AVX L1 8.2 nh Chip Inductor LL168--FSL8N2JL TOKO L2 1.2 nh Chip Inductor LL168--FSL1N2S TOKO L3 33 nh Chip Inductor 42CS--33NXGLW Coilcraft L4 22 nh Chip Inductor 42CS--22NXGLW Coilcraft L5 3.3 nh Chip Inductor 63CS--3N3XJLW Coilcraft R1 33, 1/16 W Chip Resistor RC42JR--7331RL Yageo R2 1.5 k, 1/16 W Chip Resistor RC42JR--7152RL Yageo R3 Component Not Placed PCB.14, r =3.7 FR48 Isola Note: Component numbers C6, C7, C8, C9 and R3 are labeled on board but not placed. 3

4 V CC2 V CC1 V BIAS (1) C1 R2 R3* C2 L4 C9* C3 RF IN R1 C6* C8* L3 RF OUT C5 C1 L5 C11 L1 L2 C7* C4 QFN 3x3--12M Rev. 1 P DET (1) V BIAS [Board] supplies V BA1,V BA2 and V BIAS [Device]. Note: Component numbers C6*, C7*, C8*, C9* and R3* are labeled on board but not placed. Figure 4. MMZ9312B Test Circuit Component Layout CDMA IS -95, 9 MHz, 5. V Table 7. MMZ9312B Test Circuit Component Designations and Values CDMA IS -95, 9 MHz, 5. V Part Description Part Number Manufacturer C1, C2 1 F Chip Capacitors GRM155R61A15KE15 Murata C3 4.7 F Chip Capacitor GRM188R6J475KE19 Murata C4 47 pf Chip Capacitor GRM1555C1H471JA1 Murata C5 1 pf Chip Capacitor GRM1555C1H11JA1 Murata C6, C7, C8, C9 Components Not Placed C1 4.7 pf Chip Capacitor 423J4R7BBSTR AVX C pf Chip Capacitor 423J6R8BBSTR AVX L1 8.2 nh Chip Inductor LL168--FSL8N2JL TOKO L2 1.2 nh Chip Inductor LL168--FSL1N2S TOKO L3 33 nh Chip Inductor 42CS--33NXGLW Coilcraft L4 22 nh Chip Inductor 42CS--22NXGLW Coilcraft L5 3.3 nh Chip Inductor 63CS--3N3XJLW Coilcraft R1 33, 1/16 W Chip Resistor RC42JR--7331RL Yageo R2 1.5 k, 1/16 W Chip Resistor RC42JR--7152RL Yageo R3 Component Not Placed PCB.14, r =3.7 FR48 Isola (Test Circuit Component Designations and Values table repeated for reference.) 4

5 TYPICAL CHARACTERISTICS CDMA IS -95, 9 MHz, 5. V C S11 (db) C S21 (db) Figure 5. S11 versus Frequency versus Temperature Figure 6. S21 versus Frequency versus Temperature --5 S22 (db) C Figure 7. S22 versus Frequency versus Temperature 1 5

6 TYPICAL CHARACTERISTICS CDMA IS -95, 9 MHz, 5. V ACPR (dbc) I CC C C ACPR P out, OUTPUT POWER (dbm),f=9mhz Single--Carrier IS--95, 9 Channel Forward 75 khz Measurement Offset 3 khz Measurement Bandwidth Figure 8. ACPR versus Collector Current versus Output Power versus Temperature I CC, COLLECTOR CURRENT (ma) G ps, POWER GAIN (db) Gain C,f=9MHz Single--Carrier IS--95, 9 Channel Forward 75 khz Measurement Offset 3 khz Measurement Bandwidth PAE --4 C P out, OUTPUT POWER (dbm) PAE, POWER ADDED EFFICIENCY (%) P1dB, 1 db COMPRESSION POINT, CW (dbm) C Figure 9. Power Gain versus Power Added Efficiency versus Output Power versus Temperature Figure 1. P1dB versus Frequency versus Temperature, CW P DET, POWER DETECTOR (V) ,f=9MHz Single--Carrier IS--95, 9 Channel Forward 75 khz Measurement Offset 3 khz Measurement Bandwidth C P out, OUTPUT POWER (dbm) Figure 11. Power Detector versus Output Power versus Temperature 27 6

7 V BIAS V CC1 R1 R2 C1 L4 C2 V CC L3 C3 1 BIAS CIRCUIT 9 C1 C5 2 8 L5 RF OUTPUT RF INPUT C11 L2 3 7 L P DET C4 Figure 12. MMZ9312B Test Circuit Schematic UMTS/LTE, 9 MHz, 5. V Table 8. MMZ9312B Test Circuit Component Designations and Values UMTS/LTE, 9 MHz, 5. V Part Description Part Number Manufacturer C1, C2 1 F Chip Capacitors GRM155R61A15KE15 Murata C3 4.7 F Chip Capacitor GRM188R6J475KE19 Murata C4 47 pf Chip Capacitor GRM1555C1H471JA1 Murata C5 1 pf Chip Capacitor GRM1555C1H11JA1 Murata C6, C7, C8, C9 Components Not Placed C1 3.9 pf Chip Capacitor 423J3R9BBSTR AVX C pf Chip Capacitor 423J5R6BBSTR AVX L1 8.2 nh Chip Inductor LL168--FSL8N2JL TOKO L2 1.2 nh Chip Inductor LL168--FSL1N2S TOKO L3 33 nh Chip Inductor 42CS--33NXGLW Coilcraft L4 22 nh Chip Inductor 42CS--22NXGLW Coilcraft L5 3.3 nh Chip Inductor 63CS--3N3XJLW Coilcraft R1 33, 1/16 W Chip Resistor RC42JR--7331RL Yageo R2 1.5 k, 1/16 W Chip Resistor RC42JR--7152RL Yageo R3 Component Not Placed PCB.14, r =3.7 FR48 Isola Note: Component numbers C6, C7, C8, C9 and R3 are labeled on board but not placed. 7

8 V CC2 V CC1 V BIAS (1) C1 R2 R3* C2 L4 C9* C3 RF IN R1 C6* C8* L3 RF OUT C5 C1 L5 C11 L1 L2 C7* C4 QFN 3x3--12M Rev. 1 P DET (1) V BIAS [Board] supplies V BA1,V BA2 and V BIAS [Device]. Note: Component numbers C6*, C7*, C8*, C9* and R3* are labeled on board but not placed. Figure 13. MMZ9312B Test Circuit Component Layout UMTS/LTE, 9 MHz, 5. V Table 8. MMZ9312B Test Circuit Component Designations and Values UMTS/LTE, 9 MHz, 5. V Part Description Part Number Manufacturer C1, C2 1 F Chip Capacitors GRM155R61A15KE15 Murata C3 4.7 F Chip Capacitor GRM188R6J475KE19 Murata C4 47 pf Chip Capacitor GRM1555C1H471JA1 Murata C5 1 pf Chip Capacitor GRM1555C1H11JA1 Murata C6, C7, C8, C9 Components Not Placed C1 3.9 pf Chip Capacitor 423J3R9BBSTR AVX C pf Chip Capacitor 423J5R6BBSTR AVX L1 8.2 nh Chip Inductor LL168--FSL8N2JL TOKO L2 1.2 nh Chip Inductor LL168--FSL1N2S TOKO L3 33 nh Chip Inductor 42CS--33NXGLW Coilcraft L4 22 nh Chip Inductor 42CS--22NXGLW Coilcraft L5 3.3 nh Chip Inductor 63CS--3N3XJLW Coilcraft R1 33, 1/16 W Chip Resistor RC42JR--7331RL Yageo R2 1.5 k, 1/16 W Chip Resistor RC42JR--7152RL Yageo R3 Component Not Placed PCB.14, r =3.7 FR48 Isola (Test Circuit Component Designations and Values table repeated for reference.) 8

9 TYPICAL CHARACTERISTICS UMTS/LTE, 9 MHz, 5. V S11 (db) S21 (db) Figure 14. S11 versus Frequency Figure 15. S21 versus Frequency S22 (db) Figure 16. S22 versus Frequency 9

10 TYPICAL CHARACTERISTICS UMTS/LTE, 9 MHz, 5. V G ps, POWER GAIN (db) PAE Gain f = 9 MHz, W--CDMA P out, OUTPUT POWER (dbm) Figure 17. Power Gain and Power Added Efficiency versus Output Power PAE, POWER ADDED EFFICIENCY (%) ACPR (dbc) f = 9 MHz W--CDMA LTE 1 MHz V det, POWER DETECTOR OUTPUT (V) 1.75 f = 9 MHz LTE 1 MHz.5.25 W--CDMA P out, OUTPUT POWER (dbm) Figure 18. ACPR versus Output Power P out, OUTPUT POWER (dbm) Figure 19. Power Detector Output versus Output Power OPERATING CONDITIONS FOR FIGURES W- CDMA Single--Carrier W--CDMA 3GPP TM1 CF = 9.31 db, Channel Bandwidth = 3.84 MHz Adjacent Channel Bandwidth = 3.84 MHz Channel Offset = 5MHz LTE 1 MHz LTE 1 MHz 3GPP TM1.1 CF = 11.7 db, Channel Bandwidth = 9 MHz Adjacent Channel Bandwidth = 9 MHz Channel Offset = 1 MHz 1

11 V BIAS V CC1 R1 R2 C1 L4 C2 V CC L3 C3 1 BIAS CIRCUIT 9 C1 C5 2 8 L5 RF OUTPUT RF INPUT C11 L2 3 7 L P DET C4 Figure 2. MMZ9312B Test Circuit Schematic CDMA IS -95, 9 MHz, 3.3 V Table 9. MMZ9312B Test Circuit Component Designations and Values CDMA IS -95, 9 MHz, 3.3 V Part Description Part Number Manufacturer C1, C2 1 F Chip Capacitors GRM155R61A15KE15 Murata C3 4.7 F Chip Capacitor GRM188R6J475KE19 Murata C4 47 pf Chip Capacitor GRM1555C1H471JA1 Murata C5 1 pf Chip Capacitor GRM1555C1H11JA1 Murata C6, C7, C8, C9 Components Not Placed C1 4.7 pf Chip Capacitor 423J4R7BBSTR AVX C pf Chip Capacitor 423J6R8BBSTR AVX L1 8.2 nh Chip Inductor LL168--FSL8N2JL TOKO L2 1.2 nh Chip Inductor LL168--FSL1N2S TOKO L3 33 nh Chip Inductor 42CS--33NXGLW Coilcraft L4 22 nh Chip Inductor 42CS--22NXGLW Coilcraft L5 3.3 nh Chip Inductor 63CS--3N3XJLW Coilcraft R1 82, 1/16 W Chip Resistor RC42JR--782RL Yageo R2 47, 1/16 W Chip Resistor RC42JR--7471RL Yageo R3 Component Not Placed PCB.14, r =3.7 FR48 Isola Note: Component numbers C6, C7, C8, C9 and R3 are labeled on board but not placed. 11

12 V CC2 V CC1 V BIAS (1) C1 R2 R3* C2 L4 C9* C3 RF IN R1 C6* C8* L3 RF OUT C5 C1 L5 C11 L1 L2 C7* C4 QFN 3x3--12M Rev. 1 P DET (1) V BIAS [Board] supplies V BA1,V BA2 and V BIAS [Device]. Note: Component numbers C6*, C7*, C8*, C9* and R3* are labeled on board but not placed. Figure 21. MMZ9312B Test Circuit Component Layout CDMA IS -95, 9 MHz, 3.3 V Table 9. MMZ9312B Test Circuit Component Designations and Values CDMA IS -95, 9 MHz, 3.3 V Part Description Part Number Manufacturer C1, C2 1 F Chip Capacitors GRM155R61A15KE15 Murata C3 4.7 F Chip Capacitor GRM188R6J475KE19 Murata C4 47 pf Chip Capacitor GRM1555C1H471JA1 Murata C5 1 pf Chip Capacitor GRM1555C1H11JA1 Murata C6, C7, C8, C9 Components Not Placed C1 4.7 pf Chip Capacitor 423J4R7BBSTR AVX C pf Chip Capacitor 423J6R8BBSTR AVX L1 8.2 nh Chip Inductor LL168--FSL8N2JL TOKO L2 1.2 nh Chip Inductor LL168--FSL1N2S TOKO L3 33 nh Chip Inductor 42CS--33NXGLW Coilcraft L4 22 nh Chip Inductor 42CS--22NXGLW Coilcraft L5 3.3 nh Chip Inductor 63CS--3N3XJLW Coilcraft R1 82, 1/16 W Chip Resistor RC42JR--782RL Yageo R2 47, 1/16 W Chip Resistor RC42JR--7471RL Yageo R3 Component Not Placed PCB.14, r =3.7 FR48 Isola (Test Circuit Component Designations and Values table repeated for reference.) 12

13 TYPICAL CHARACTERISTICS CDMA IS -95, 9 MHz, 3.3 V 38 S11 (db) C S21 (db) C --24 V CC1 =V CC2 =V BIAS =3.3Vdc V CC1 =V CC2 =V BIAS =3.3Vdc Figure 22. S11 versus Frequency versus Temperature Figure 23. S21 versus Frequency versus Temperature --4 S22 (db) C V CC1 =V CC2 =V BIAS =3.3Vdc Figure 24. S22 versus Frequency versus Temperature 1 13

14 TYPICAL CHARACTERISTICS CDMA IS -95, 9 MHz, 3.3 V ACPR (dbc) V CC1 =V CC2 =V BIAS =3.3Vdc,f=9MHz Single--Carrier IS--95, 9 Channel Forward khz Measurement Offset khz Measurement Bandwidth I CC C ACPR C P out, OUTPUT POWER (dbm) Figure 25. ACPR versus Collector Current versus Output Power versus Temperature I CC, COLLECTOR CURRENT (ma) G ps, POWER GAIN (db) Gain C V CC1 =V CC2 =V BIAS =3.3Vdc,f=9MHz Single--Carrier IS--95, 9 Channel Forward 75 khz Measurement Offset 3 khz Measurement Bandwidth PAE --4 C P out, OUTPUT POWER (dbm) PAE, POWER ADDED EFFICIENCY (%) P1dB, 1 db COMPRESSION POINT, CW (dbm) C V CC1 =V CC2 =V BIAS =3.3Vdc Figure 26. Power Gain versus Power Added Efficiency versus Output Power versus Temperature Figure 27. P1dB versus Frequency versus Temperature, CW P DET, POWER DETECTOR (V) V CC1 =V CC2 =V BIAS =3.3Vdc,f=9MHz Single--Carrier IS--95, 9 Channel Forward 75 khz Measurement Offset 3 khz Measurement Bandwidth C P out, OUTPUT POWER (dbm) Figure 28. Power Detector versus Output Power versus Temperature 26 14

15 V BIAS V CC1 R1 R2 C1 L4 C2 V CC L3 C3 1 BIAS CIRCUIT 9 C1 C5 2 8 L5 RF OUTPUT RF INPUT C11 L2 3 7 L P DET C4 Figure 29. MMZ9312B Test Circuit Schematic UMTS/LTE, 9 MHz, 3.3 V Table 1. MMZ9312B Test Circuit Component Designations and Values UMTS/LTE, 9 MHz, 3.3 V Part Description Part Number Manufacturer C1, C2 1 F Chip Capacitors GRM155R61A15KE15 Murata C3 4.7 F Chip Capacitor GRM188R6J475KE19 Murata C4 47 pf Chip Capacitor GRM1555C1H471JA1 Murata C5 1 pf Chip Capacitor GRM1555C1H11JA1 Murata C6, C7, C8, C9 Components Not Placed C1 3.9 pf Chip Capacitor 423J3R9BBSTR AVX C pf Chip Capacitor 423J6R8BBSTR AVX L1 8.2 nh Chip Inductor LL168--FSL8N2JL TOKO L2 1.2 nh Chip Inductor LL168--FSL1N2S TOKO L3 33 nh Chip Inductor 42CS--33NXGLW Coilcraft L4 22 nh Chip Inductor 42CS--22NXGLW Coilcraft L5 3.3 nh Chip Inductor 63CS--3N3XJLW Coilcraft R1 82, 1/16 W Chip Resistor RC42JR--782RL Yageo R2 47, 1/16 W Chip Resistor RC42JR--7471RL Yageo R3 Component Not Placed PCB.14, r =3.7 FR48 Isola Note: Component numbers C6, C7, C8, C9 and R3 are labeled on board but not placed. 15

16 V CC2 V CC1 V BIAS (1) C1 R2 R3* C2 L4 C9* C3 RF IN R1 C6* C8* L3 RF OUT C5 C1 L5 C11 L1 L2 C7* C4 QFN 3x3--12M Rev. 1 P DET (1) V BIAS [Board] supplies V BA1,V BA2 and V BIAS [Device]. Note: Component numbers C6*, C7*, C8*, C9* and R3* are labeled on board but not placed. Figure 3. MMZ9312B Test Circuit Component Layout UMTS/LTE, 9 MHz, 3.3 V Table 1. MMZ9312B Test Circuit Component Designations and Values UMTS/LTE, 9 MHz, 3.3 V Part Description Part Number Manufacturer C1, C2 1 F Chip Capacitors GRM155R61A15KE15 Murata C3 4.7 F Chip Capacitor GRM188R6J475KE19 Murata C4 47 pf Chip Capacitor GRM1555C1H471JA1 Murata C5 1 pf Chip Capacitor GRM1555C1H11JA1 Murata C6, C7, C8, C9 Components Not Placed C1 3.9 pf Chip Capacitor 423J3R9BBSTR AVX C pf Chip Capacitor 423J6R8BBSTR AVX L1 8.2 nh Chip Inductor LL168--FSL8N2JL TOKO L2 1.2 nh Chip Inductor LL168--FSL1N2S TOKO L3 33 nh Chip Inductor 42CS--33NXGLW Coilcraft L4 22 nh Chip Inductor 42CS--22NXGLW Coilcraft L5 3.3 nh Chip Inductor 63CS--3N3XJLW Coilcraft R1 82, 1/16 W Chip Resistor RC42JR--782RL Yageo R2 47, 1/16 W Chip Resistor RC42JR--7471RL Yageo R3 Component Not Placed PCB.14, r =3.7 FR48 Isola (Test Circuit Component Designations and Values table repeated for reference.) 16

17 TYPICAL CHARACTERISTICS UMTS/LTE, 9 MHz, 3.3 V S11 (db) S21 (db) V CC1 =V CC2 =V BIAS =3.3Vdc Figure 31. S11 versus Frequency V CC1 =V CC2 =V BIAS =3.3Vdc Figure 32. S21 versus Frequency S22 (db) V CC1 =V CC2 =V BIAS =3.3Vdc Figure 33. S22 versus Frequency 17

18 TYPICAL CHARACTERISTICS UMTS/LTE, 9 MHz, 3.3 V G ps, POWER GAIN (db) PAE Gain V CC1 =V CC2 =V BIAS =3.3Vdc f = 9 MHz, W--CDMA P out, OUTPUT POWER (dbm) Figure 34. Power Gain and Power Added Efficiency versus Output Power PAE, POWER ADDED EFFICIENCY (%) ACPR (dbc) V CC1 =V CC2 =V BIAS =3.3Vdc f = 9 MHz LTE 1 MHz W--CDMA V det, POWER DETECTOR OUTPUT (V) 1.75 V CC1 =V CC2 =V BIAS =3.3Vdc f = 9 MHz LTE 1 MHz.5.25 W--CDMA P out, OUTPUT POWER (dbm) Figure 35. ACPR versus Output Power P out, OUTPUT POWER (dbm) Figure 36. Power Detector Output versus Output Power OPERATING CONDITIONS FOR FIGURES W- CDMA Single--Carrier W--CDMA 3GPP TM1 CF = 9.31 db, Channel Bandwidth = 3.84 MHz Adjacent Channel Bandwidth = 3.84 MHz Channel Offset = 5MHz LTE 1 MHz LTE 1 MHz 3GPP TM1.1 CF = 11.7 db, Channel Bandwidth = 9 MHz Adjacent Channel Bandwidth = 9 MHz Channel Offset = 1 MHz 18

19 V BIAS V CC1 R1 R2 C1 L4 C2 V CC L3 C3 1 BIAS CIRCUIT 9 C1 C5 2 8 L5 RF OUTPUT RF INPUT C11 L2 3 7 L P DET C4 Figure 37. MMZ9312B Test Circuit Schematic ZigBee, 45 MHz, 5. V Table 11. MMZ9312B Test Circuit Component Designations and Values ZigBee, 45 MHz, 5. V Part Description Part Number Manufacturer C1, C2 1 F Chip Capacitors GRM155R61A15KE15 Murata C3 4.7 F Chip Capacitor GRM188R6J475KE19 Murata C4 47 pf Chip Capacitor GRM1555C1H471JA1 Murata C5 1 pf Chip Capacitor GRM1555C1H11JA1 Murata C6, C7, C8, C9 Components Not Placed C1 3.9 pf Chip Capacitor 423J3R9BBSTR AVX C11 1 pf Chip Capacitor 423J1RBBSTR AVX L1 18 nh Chip Inductor LL168--FSL18NS TOKO L2 1.2 nh Chip Inductor LL168--FSL1N2S TOKO L3 3.9 nh Chip Inductor LL168--FSL3N9S TOKO L4 12 nh Chip Inductor LL168--FSL12NS TOKO L5 12 nh Chip Inductor 63CS--12NXJL Coilcraft R1 33, 1/16 W Chip Resistor RC42JR--7331RL Yageo R2 1.5 k, 1/16 W Chip Resistor RC42JR--7152RL Yageo R3 Component Not Placed PCB.14, r =3.7 FR48 Isola Note: Component numbers C6, C7, C8, C9 and R3 are labeled on board but not placed. 19

20 V CC2 V CC1 V BIAS (1) C1 R2 R3* C2 L4 C9* C3 RF IN R1 C6* C8* L3 RF OUT C5 C1 L5 C11 L1 L2 C7* C4 QFN 3x3--12M Rev. 1 P DET (1) V BIAS [Board] supplies V BA1,V BA2 and V BIAS [Device]. Note: Component numbers C6*, C7*, C8*, C9* and R3* are labeled on board but not placed. Figure 38. MMZ9312B Test Circuit Component Layout ZigBee, 45 MHz, 5. V Table 11. MMZ9312B Test Circuit Component Designations and Values ZigBee, 45 MHz, 5. V Part Description Part Number Manufacturer C1, C2 1 F Chip Capacitors GRM155R61A15KE15 Murata C3 4.7 F Chip Capacitor GRM188R6J475KE19 Murata C4 47 pf Chip Capacitor GRM1555C1H471JA1 Murata C5 1 pf Chip Capacitor GRM1555C1H11JA1 Murata C6, C7, C8, C9 Components Not Placed C1 3.9 pf Chip Capacitor 423J3R9BBSTR AVX C11 1 pf Chip Capacitor 423J1RBBSTR AVX L1 18 nh Chip Inductor LL168--FSL18NS TOKO L2 1.2 nh Chip Inductor LL168--FSL1N2S TOKO L3 3.9 nh Chip Inductor LL168--FSL3N9S TOKO L4 12 nh Chip Inductor LL168--FSL12NS TOKO L5 12 nh Chip Inductor 63CS--12NXJL Coilcraft R1 33, 1/16 W Chip Resistor RC42JR--7331RL Yageo R2 1.5 k, 1/16 W Chip Resistor RC42JR--7152RL Yageo R3 Component Not Placed PCB.14, r =3.7 FR48 Isola (Test Circuit Component Designations and Values table repeated for reference.) 2

21 TYPICAL CHARACTERISTICS ZIGBEE, 45 MHz, 5. V S11 (db) S21 (db) Figure 39. S11 versus Frequency Figure 4. S21 versus Frequency S22 (db) Figure 41. S22 versus Frequency 7 21

22 TYPICAL CHARACTERISTICS ZIGBEE, 45 MHz, 5. V G ps, POWER GAIN (db) Gain f = 45 MHz PAE P out, OUTPUT POWER (dbm) PAE, POWER ADDED EFFICIENCY (%) P1dB, 1 db COMPRESSION POINT, CW (dbm) Figure 42. Power Gain versus Power Added Efficiency versus Output Power, CW Figure 43. P1dB versus Frequency, CW P DET, POWER DETECTOR (V) f = 45 MHz P out, OUTPUT POWER (dbm) Figure 44. Power Detector versus Output Power, CW 22

23 solder pad with thermal via structure. All dimensions in mm. Figure 45. PCB Pad Layout for QFN 3 3 MA3 WLYW Figure 46. Product Marking 23

24 PACKAGE DIMENSIONS 24

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27 PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following resources to aid your design process. Application Notes AN1955: Thermal Measurement Methodology of RF Power Amplifiers Software.s2p File Development Tools Printed Circuit Boards For Software and Tools, do a Part Number search at and select the Part Number link. Go to Software & Tools on the part s Product Summary page to download the respective tool. FAILURE ANALYSIS At this time, because of the physical characteristics of the part, failure analysis is limited to electrical signature analysis. In cases where Freescale is contractually obligated to perform failure analysis (FA) services, full FA may be performed by third party vendors with moderate success. For updates contact your local Freescale Sales Office. REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description Nov. 211 Initial Release of Data Sheet 1 Feb. 212 Typical Performance table: changed P out at 75 MHz from 19.5 to 17.5 dbm to reflect recent performance measurements, p. 1 Figs. 3, 12 and 21, MMZ9312B Test Circuit Schematic: corrected L1 inductor label in test circuit schematics, pp. 3, 7 and 11 2 Dec. 214 Typical Performance table: added 9 MHz, 1C W--CDMA TM1 and 9 MHz, 1 MHz LTE TM1.1, p. 1 Table 2, Maximum Ratings: updated Junction Temperature from 15 C to 175 C to reflect recent test results of the device, p. 1 Added application circuit for UMTS/LTE, 9 MHz, 5. V as follows: schematic, component designations and values, component layout, and typical characteristic performance graphs, pp Added application circuit for UMTS/LTE, 9 MHz, 3.3 V as follows: schematic, component designations and values, component layout, and typical characteristic performance graphs, pp Fig. 46, Product Marking: updated date code line to reflect improved traceability information, p. 23 Added Failure Analysis information, p

28 How to Reach Us: Home Page: freescale.com Web Support: freescale.com/support Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. Freescale reserves the right to make changes without further notice to any products herein. Freescale makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters that may be provided in Freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including typicals, must be validated for each customer application by customer s technical experts. Freescale does not convey any license under its patent rights nor the rights of others. Freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/salestermsandconditions. Freescale and the Freescale logo are trademarks of, Reg. U.S. Pat. & Tm. Off. All other product or service names are the property of their respective owners. E , 214 Document Number: MMZ9312B 28 Rev. 2, 12/214