30 MHz to 6 GHz RF/IF Gain Block ADL5544

Transcription

1 Data Sheet FEATURES Fixed gain of 17.4 db Broadband operation from 3 MHz to 6 GHz Input/output internally matched to Ω Integrated bias control circuit OIP3 of 34.9 dbm at 9 MHz P1dB of 17.6 dbm at 9 MHz Noise figure of 2.9 db at 9 MHz Single V power supply Low quiescent current of ma Wide operating temperature range of 4 C to + C Thermally efficient SOT-89 package ESD rating of ±1. kv (Class 1C) GENERAL DESCRIPTION The is a single-ended RF/IF gain block amplifier that provides broadband operation from 3 MHz to 6 GHz. The provides over 34 dbm of OIP3 using only ma from a V supply. The provides a gain of 17 db, which is stable over frequency, temperature, power supply, and from device to device. The amplifier is offered in the industry-standard SOT-89 package and is internally matched to Ω at the input and output, making the very easy to implement in a wide variety of applications. The only external components required are the input/output ac coupling capacitors, power supply decoupling capacitors, and dc bias inductor. 3 MHz to 6 GHz RF/IF Gain Block FUNCTIONAL BLOCK DIAGRAM (2) BIAS 1 2 RFIN Figure 1. 3 RFOUT The is fabricated on an InGaP HBT process and has a high ESD rating of ±1. kv (Class 1C). The is also fully specified for operation across the wide temperature range of 4 C to + C. A fully populated RoHS-compliant evaluation board is available Rev. A Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. One Technology Way, P.O. Box 916, Norwood, MA , U.S.A. Tel: Analog Devices, Inc. All rights reserved. Technical Support

2 TABLE OF CONTENTS Features... 1 Functional Block Diagram... 1 General Description... 1 Revision History... 2 Specifications... 3 Typical Scattering Parameters (S-Parameters)... Absolute Maximum Ratings... 7 Thermal Resistance... 7 ESD Caution... 7 Pin Configuration and Function Descriptions... 8 Typical Performance Characteristics... 9 MHz to 4 GHz Frequency Band... 9 Data Sheet 1 MHz to MHz Frequency Band GHz to 6 GHz Frequency Band General Applications Information Basic Connections Soldering Information and Recommended PCB Land Pattern... Operation Down to 3 MHz W-CDMA ACPR Performance Evaluation Board Outline Dimensions Ordering Guide REVISION HISTORY 11/13 Rev. to Rev. A Added Figure, Renumbered Sequentially Changes to Figure Updated Outline Dimensions /13 Revision : Initial Version Rev. A Page 2 of 2

3 Data Sheet SPECIFICATIONS VPOS = V and TA = C, unless otherwise noted. Table 1. Parameter Test Conditions/Comments Min Typ Max Unit OVERALL FUNCTION Frequency Range 3 6 MHz FREQUENCY = 3 MHz Gain 18. db Output 1 db Compression Point 13. dbm Output Third-Order Intercept Δf = 1 MHz, output power (POUT) = 7 dbm per tone 31.2 dbm Noise Figure 3.9 db FREQUENCY = 14 MHz Gain 18.4 db vs. Frequency ±1 MHz ±.4 db vs. Temperature 4 C TA ±.3 db vs. Supply 4.7 V to. V ±. db Output 1 db Compression Point 16.9 dbm Output Third-Order Intercept Δf = 1 MHz, output power (POUT) = 7 dbm per tone 32. dbm Noise Figure 3.1 db FREQUENCY = MHz Gain 17.8 db vs. Frequency ±1 MHz ±.1 db vs. Temperature 4 C TA ±.3 db vs. Supply 4.7 V to. V ±.6 db Output 1 db Compression Point 17.4 dbm Output Third-Order Intercept Δf = 1 MHz, output power (POUT) = 7 dbm per tone 31.2 dbm Noise Figure 3.1 db FREQUENCY = 7 MHz Gain db vs. Frequency ± MHz ±.3 db vs. Temperature 4 C TA ±.3 db vs. Supply 4.7 V to. V ±.2 db Output 1 db Compression Point 17.4 dbm Output Third-Order Intercept Δf = 1 MHz, output power (POUT) = 7 dbm per tone 33.4 dbm Noise Figure 2.9 db FREQUENCY = 9 MHz Gain db vs. Frequency ± MHz ±.3 db vs. Temperature 4 C TA ±.3 db vs. Supply 4.7 V to. V ±.2 db Output 1 db Compression Point 17.6 dbm Output Third-Order Intercept Δf = 1 MHz, output power (POUT) = 7 dbm per tone 34.9 dbm Noise Figure 2.9 db FREQUENCY = 19 MHz Gain db vs. Frequency ± MHz ±. db vs. Temperature 4 C TA ±.3 db vs. Supply 4.7 V to. V ±.4 db Output 1 db Compression Point.4 dbm Output Third-Order Intercept Δf = 1 MHz, output power (POUT) = 7 dbm per tone 32.4 dbm Noise Figure 3.4 db Rev. A Page 3 of 2

4 Data Sheet Parameter Test Conditions/Comments Min Typ Max Unit FREQUENCY = 214 MHz Gain db vs. Frequency ± MHz ±.4 db vs. Temperature 4 C TA ±.4 db vs. Supply 4.7 V to. V ±. db Output 1 db Compression Point 14.8 dbm Output Third-Order Intercept Δf = 1 MHz, output power (POUT) = 7 dbm per tone 31.3 dbm Noise Figure 3. db FREQUENCY = 26 MHz Gain db vs. Frequency ± MHz ±.3 db vs. Temperature 4 C TA ±.3 db vs. Supply 4.7 V to. V ±. db Output 1 db Compression Point 14.1 dbm Output Third-Order Intercept Δf = 1 MHz, output power (POUT) = 7 dbm per tone 3. dbm Noise Figure 3.7 db FREQUENCY = MHz Gain db vs. Frequency ± MHz ±. db vs. Temperature 4 C TA ±.4 db vs. Supply 4.7 V to. V ±.3 db Output 1 db Compression Point 12.2 dbm Output Third-Order Intercept Δf = 1 MHz, output power (POUT) = 7 dbm per tone 26. dbm Noise Figure 4.1 db FREQUENCY = 4 MHz Gain db vs. Frequency ± MHz ±.1 db vs. Temperature 4 C TA ±.6 db vs. Supply 4.7 V to. V ±.8 db Output 1 db Compression Point 1.8 dbm Output Third-Order Intercept Δf = 1 MHz, output power (POUT) = 7 dbm per tone 23.8 dbm Noise Figure 4.6 db FREQUENCY = MHz Gain 14. db vs. Frequency ± MHz ±.4 db vs. Temperature 4 C TA ±.6 db vs. Supply 4.7 V to. V ±.1 db Output 1 db Compression Point 8.7 dbm Output Third-Order Intercept Δf = 1 MHz, output power (POUT) = 7 dbm per tone 21.3 dbm Noise Figure 4.8 db FREQUENCY = 8 MHz Gain 14. db vs. Frequency ± MHz ±. db vs. Temperature 4 C TA ±1. db vs. Supply 4.7 V to. V ±.1 db Output 1 db Compression Point 7. dbm Output Third-Order Intercept Δf = 1 MHz, output power (POUT) = 7 dbm per tone 18.7 dbm Noise Figure.4 db POWER INTERFACE VPOS Supply Voltage 4.7. V Supply Current 69 ma vs. Temperature 4 C TA ma Power Dissipation VPOS = V 27 mw Rev. A Page 4 of 2

5 Data Sheet TYPICAL SCATTERING PARAMETERS (S-PARAMETERS) VPOS = V and TA = C. The effects of the test fixture have been deembedded up to the pins of the device. Table 2. Frequency (MHz) S11 S21 S12 S22 Magnitude (db) Angle ( ) Magnitude (db) Angle ( ) Magnitude (db) Angle ( ) Magnitude (db) Angle ( ) Rev. A Page of 2

6 Data Sheet Frequency (MHz) S11 S21 S12 S22 Magnitude (db) Angle ( ) Magnitude (db) Angle ( ) Magnitude (db) Angle ( ) Magnitude (db) Angle ( ) Rev. A Page 6 of 2

7 Data Sheet ABSOLUTE MAXIMUM RATINGS Table 3. Parameter Rating Supply Voltage, VPOS 6. V Input Power ( Ω Impedance) 18 dbm Internal Power Dissipation 4 mw (Pad Soldered to Ground) Maximum Junction Temperature C Operating Temperature Range 4 C to + C Storage Temperature Range 6 C to + C Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. THERMAL RESISTANCE Table 4 lists the junction-to-air thermal resistance (θja) and the junction-to-case thermal resistance (θjc) for the. Table 4. Thermal Resistance Package Type θja 1 θjc 2 Unit 3-Lead SOT-89 (RK-3) 3 C/W 1 Measured on the evaluation board. For more information about board layout, see the Soldering Information and Recommended PCB Land Pattern section. 2 Based on simulation with a standard JEDEC board per JESD1. ESD CAUTION Rev. A Page 7 of 2

8 Data Sheet PIN CONFIGURATION AND FUNCTION DESCRIPTIONS RFIN 1 2 TOP VIEW (Not to Scale) (2) RFOUT 3 NOTES 1. THE EXPOSED PAD ENCOMPASSES PIN 2 AND THE TAB AT THE TOP SIDE OF THE PACKAGE. SOLDER THE EXPOSED PAD TO A LOW IMPEDANCE GROUND PLANE FOR ELECTRICAL GROUNDING AND THERMAL TRANSFER. Figure 2. Pin Configuration Table. Pin Function Descriptions Pin No. Mnemonic Description 1 RFIN RF Input. This pin requires a dc blocking capacitor. 2 Ground. Connect this pin to a low impedance ground plane. 3 RFOUT RF Output and Supply Voltage. DC bias is provided to this pin through an inductor that is connected to the external power supply. The RF path requires a dc blocking capacitor. EPAD Exposed Pad. The exposed pad encompasses Pin 2 and the tab at the top side of the package. Solder the exposed pad to a low impedance ground plane for electrical grounding and thermal transfer. Rev. A Page 8 of 2

9 Data Sheet TYPICAL PERFORMANCE CHARACTERISTICS MHz TO 4 GHz FREQUENCY BAND 4 4 NOISE FIGURE, GAIN, P1dB, OIP3 (db, dbm) NOISE FIGURE OIP3 GAIN P1dB OIP3 (dbm) 3 2 7MHz 9MHz MHz 214MHz 19MHz 26MHz 4MHz Figure 3. Noise Figure, Gain, P1dB, and OIP3 vs. Frequency P OUT PER TONE (dbm) Figure 6. OIP3 vs. Output Power (POUT) and Frequency GAIN (db) C + C + C S-PARAMETERS (db) 1 2 S12 S22 S Figure 4. Gain vs. Frequency and Temperature Figure 7. Input Return Loss (S11), Output Return Loss (S22), and Reverse Isolation (S12) vs. Frequency C + C. P1dB (dbm) C + C 4 C 3 2 OIP3 (dbm) NOISE FIGURE (db) C + C 4 C C Figure. P1dB and OIP3 vs. Frequency and Temperature Figure 8. Noise Figure vs. Frequency and Temperature Rev. A Page 9 of 2

10 Data Sheet 1 MHz TO MHz FREQUENCY BAND NOISE FIGURE, GAIN, P1dB, OIP3 (db, dbm) OIP3 GAIN P1dB NOISE FIGURE OIP3 (dbm) MHz MHz P OUT PER TONE (dbm) Figure 9. Noise Figure, Gain, P1dB, and OIP3 vs. Frequency, Low Frequency Configuration Figure 12. OIP3 vs. Output Power (POUT) and Frequency, Low Frequency Configuration C + C GAIN (db) C S-PARAMETERS (db) 1 2 S22 S11 S Figure 1. Gain vs. Frequency and Temperature, Low Frequency Configuration Figure 13. Input Return Loss (S11), Output Return Loss (S22), and Reverse Isolation (S12) vs. Frequency, Low Frequency Configuration C 4 C. P1dB (dbm) C + C 4 C + C OIP3 (dbm) NOISE FIGURE (db) C + C 4 C Figure 11. P1dB and OIP3 vs. Frequency and Temperature, Low Frequency Configuration Figure 14. Noise Figure vs. Frequency and Temperature, Low Frequency Configuration Rev. A Page 1 of 2

11 Data Sheet 4 GHz TO 6 GHz FREQUENCY BAND NOISE FIGURE, GAIN, P1dB, OIP3 (db, dbm) 2 1 OIP3 GAIN P1dB NOISE FIGURE OIP3 (dbm) MHz 8MHz Figure. Noise Figure, Gain, P1dB, and OIP3 vs. Frequency, High Frequency Configuration P OUT PER TONE (dbm) Figure 18. OIP3 vs. Output Power (POUT) and Frequency, High Frequency Configuration GAIN (db) C + C + C S-PARAMETERS (db) 1 2 S22 S S Figure 16. Gain vs. Frequency and Temperature, High Frequency Configuration Figure 19. Input Return Loss (S11), Output Return Loss (S22), and Reverse Isolation (S12) vs. Frequency, High Frequency Configuration P1dB (dbm) C 4 C + C 4 C + C OIP3 (dbm) NOISE FIGURE (db) C + C 4 C + C Figure 17. P1dB and OIP3 vs. Frequency and Temperature, High Frequency Configuration Figure 2. Noise Figure vs. Frequency and Temperature, High Frequency Configuration Rev. A Page 11 of 2

12 Data Sheet GENERAL SUPPLY CURRENT (ma) V.V 4.7V SUPPLY CURRENT (ma) V.V V TEMPERATURE ( C) P OUT (dbm) Figure 21. Supply Current vs. Temperature Figure 24. Supply Current vs. POUT at 9 MHz PERCENTAGE (%) SUPPLY CURRENT (ma) C + C 4 C GAIN (db) Figure 22. Gain Distribution at 9 MHz P OUT (dbm) Figure. Supply Current vs. POUT and Temperature at 9 MHz PERCENTAGE (%) PERCENTAGE (%) P1dB (dbm) Figure 23. P1dB Distribution at 9 MHz OIP3 (dbm) Figure 26. OIP3 Distribution at 9 MHz, POUT = 7 dbm per Tone Rev. A Page 12 of 2

13 Data Sheet PERCENTAGE (%) HARMONICS (dbc) H2 H NOISE FIGURE (db) Figure 27. Noise Figure Distribution at 9 MHz Figure 28. Single-Tone Harmonics vs. Frequency, POUT = dbm Rev. A Page 13 of 2

14 Data Sheet APPLICATIONS INFORMATION BASIC CONNECTIONS Figure 29 shows the basic connections for operating the. The device supports operation from 3 MHz to 6 GHz. However, for optimal performance at lower and higher frequency bands, the board configuration must be adjusted. Table 6 lists the recommended board configuration to operate the device at various frequency bands. (2) V POS C6 1µF C NOISE FIGURE, GAIN, P1dB, OIP3 (db, dbm) OIP3, DEFAULT SETUP CONFIGURATION OIP3, LOW FREQUENCY CONFIGURATION GAIN, DEFAULT SETUP CONFIGURATION GAIN, LOW FREQUENCY CONFIGURATION P1dB, DEFAULT SETUP CONFIGURATION P1dB, LOW FREQUENCY CONFIGURATION NOISE FIGURE, DEFAULT SETUP CONFIGURATION NOISE FIGURE, LOW FREQUENCY CONFIGURATION 1nF C RFIN C1 RFIN 1 2 RFOUT 3 1pF L1 C2 RFOUT Figure 3. Noise Figure, Gain, P1dB, and OIP3 vs. Frequency, 1 MHz to MHz, Comparison of Performance with the Optimized Settings and the Default Configuration C7 C8 Figure 29. Basic Connections A V dc bias is supplied to the amplifier through the bias inductor connected to RFOUT (Pin 3). The bias voltage must be decoupled using 1 pf, 1 nf, and 1 µf power supply decoupling capacitors. The typical current consumption for the is ma. At low and high frequencies, the device exhibits improved performance with the suggested setup configuration listed in Table 6. Figure 3 to Figure 33 provide a comparison of the performance of the device at the 1 MHz to MHz and 4 GHz to 6 GHz bands when driven with the optimal setup configuration and the default setup configuration S-PARAMETERS (db) 1 2 S11, DEFAULT SETUP CONFIGURATION S11, LOW FREQUENCY CONFIGURATION S22, DEFAULT SETUP CONFIGURATION S22, LOW FREQUENCY CONFIGURATION S12, DEFAULT SETUP CONFIGURATION S12, LOW FREQUENCY CONFIGURATION Figure 31. Return Loss and Reverse Isolation, 1 MHz to MHz, Comparison of Performance with the Optimized Settings and the Default Configuration Table 6. Recommended Components for Basic Connections AC Coupling Capacitors (42) DC Bias Inductor (63HP) High Frequency Matching Capacitors (42) Frequency Band C1 C2 L1 C7 C8 1 MHz to MHz 1 nf 1 nf 1 nh Do not install Do not install MHz to 4 GHz (default) 1 pf 1 pf 1 nh Do not install Do not install 4 GHz to 6 GHz 1 pf 1 pf 12 nh.1 pf.1 pf Rev. A Page 14 of 2

15 Data Sheet NOISE FIGURE, GAIN, P1dB, OIP3 (db, dbm) 2 1 OIP3, DEFAULT SETUP CONFIGURATION OIP3, HIGH FREQUENCY CONFIGURATION GAIN, DEFAULT SETUP CONFIGURATION GAIN, HIGH FREQUENCY CONFIGURATION P1dB, DEFAULT SETUP CONFIGURATION P1dB, HIGH FREQUENCY CONFIGURATION NOISE FIGURE, DEFAULT SETUP CONFIGURATION NOISE FIGURE, HIGH FREQUENCY CONFIGURATION SOLDERING INFORMATION AND RECOMMENDED PCB LAND PATTERN Figure 34 shows the recommended land pattern for the. To minimize thermal impedance, the exposed pad on the underside of the SOT-89 package is soldered to a ground plane, along with Pin 2. If multiple ground layers exist, stitch the layers together using vias. 1.8mm Figure 32. Noise Figure, Gain, P1dB, and OIP3 vs. Frequency, 4 GHz to 6 GHz, Comparison of Performance with the Optimized Settings and the Default Configuration.762mm.6mm.37mm 3.48mm S-PARAMETERS (db) 1 2 S11, DEFAULT SETUP CONFIGURATION S11, HIGH FREQUENCY CONFIGURATION S22, DEFAULT SETUP CONFIGURATION S22, HIGH FREQUENCY CONFIGURATION S12, DEFAULT SETUP CONFIGURATION S12, HIGH FREQUENCY CONFIGURATION.86mm.2mm.62mm mm Figure 33. Return Loss and Reverse Isolation, 4 GHz to 6 GHz, Comparison of Performance with the Optimized Settings and the Default Configuration 1.mm 3.mm.86mm Figure 34. Recommended Land Pattern The land pattern on the evaluation board provides a measured thermal resistance (θja) of 3 C/W. To measure θja, the temperature at the top of the SOT-89 package is found with an IR temperature gun. Thermal simulation suggests a junction temperature 1 C higher than the top-of-package temperature. With additional measurements of the ambient temperature and I/O power, θja can be determined. Rev. A Page of 2

16 Data Sheet OPERATION DOWN TO 3 MHz To operate the at frequencies below 1 MHz, a feedback network must be implemented between the input and output ports of the device to ensure stability. Figure shows a sample configuration used to evaluate the device at frequencies below 1 MHz. Figure 36 to Figure 38 demonstrate the performance of the device in this configuration. V POS OIP3 (dbm) C 4 C + C C6 (2) 1µF C 27 NOISE FIGURE, GAIN, P1dB, OIP3 (db, dbm) RFIN C1 1nF RFIN 1 2 R F Ω RFOUT C F 1nF 3 1nF C4 1pF L1 1nH C2 1nF RFOUT Figure. Setup for Low Frequency Operation Down to 3 MHz OIP3 GAIN P1dB NOISE FIGURE FREQUENCY (MHz) P OUT PER TONE (dbm) Figure 38. OIP3 vs. POUT at 3 MHz W-CDMA ACPR PERFORMANCE Figure 39 shows a plot of the adjacent channel power ratio (ACPR) vs. POUT for the. The signal type used is a single wideband code division multiple access (W-CDMA) carrier (Test Model 1-64) at 214 MHz. This signal is generated by a very low ACPR source. ACPR is measured at the output by a high dynamic range spectrum analyzer that incorporates an instrument noise-correction function. MHz CARRIER OFFSET (dbc) Figure 36. Noise Figure, Gain, P1dB, and OIP3 vs. Frequency, 3 MHz to 1 MHz P OUT (dbm) Figure 39. ACPR vs. POUT, Single W-CDMA Carrier (Test Model 1-64) at 214 MHz S-PARAMETERS (db) 1 2 S11 S22 S12 The achieves an ACPR of 8 dbc at an output power level of 7 dbm, at which point device noise and not distortion begins to dominate the power in the adjacent channels. At an output power level of dbm, ACPR is still very low at 63 dbc FREQUENCY (MHz) Figure 37. Return Loss and Reverse Isolation, 3 MHz to 1 MHz Rev. A Page 16 of 2

17 Data Sheet EVALUATION BOARD Figure 4 shows the evaluation board layout. Figure 41 shows the schematic for the evaluation board. The board is powered by a single V supply. Table 7 lists the components used on the evaluation board. Power can be applied to the board through clip-on leads (VSUP, ). (2) V SUP C6 1µF C 1nF C4 RFIN RFIN 1 2 RFOUT 3 1pF L1 1nH RFOUT C1 1pF C2 1pF Figure 41. Evaluation Board Schematic Figure 4. Evaluation Board Layout (Top) Table 7. Evaluation Board Configuration Options Component Function Default Value C1, C2 AC coupling capacitors 1 pf, 42 L1 DC bias inductor 1 nh, 63 (Coilcraft 63HP or equivalent) VSUP and Clip-on terminals for power supply C4, C, C6 Power supply decoupling capacitors C4: 1 pf, 63 C: 1 nf, 63 C6: 1 μf, 126 Rev. A Page 17 of 2

18 Data Sheet OUTLINE DIMENSIONS TYP (2) BOTTOM VIEW TYP TOP VIEW PKG COMPLIANT TO JEDEC STANDARDS TO-243 END VIEW Figure Lead Small Outline Transistor Package [SOT-89] (RK-3) Dimensions shown in millimeters C ORDERING GUIDE Model 1 Temperature Range Package Description Package Option ARKZ-R7 4 C to + C 3-Lead SOT-89, 7 Tape and Reel RK-3 -EVALZ 4 C to + C Evaluation Board 1 Z = RoHS Compliant Part. Rev. A Page 18 of 2

19 Data Sheet NOTES Rev. A Page 19 of 2

20 Data Sheet NOTES 213 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. D /13(A) Rev. A Page 2 of 2