Features. = +25 C, Vdd = +15V, Vgg2 = +9.5V [1], Idq = 500 ma [2]
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1 v3.41 Typical Applications Features The is ideal for: Test Instrumentation Military & Space Fiber optics Functional Diagram P1dB Output Power: + dbm Psat Output Power: + dbm High Gain: db Output IP3: 42 dbm Supply Voltage: Vdd = ma Ohm Matched Input/Output Lead x mm LFCSP Package: mm² General Description The is a Distributed Power Amplifier which operates from DC to. The amplifier provides + db of gain, +42 dbm output IP3, and + dbm of output power at 1dB gain compression while requiring only ma from a +V supply. The exhibits a slightly positive gain slope from 3 to 17 GHz making it ideal for military and space and test equipment applications. The amplifier I/Os are internally matched to Ohms and is housed in a RoHS compliant, x mm leadless QFN surface mount package. Electrical Specifications, T A = + C, Vdd = +V, Vgg2 = +9.V [1], Idq = ma [2] Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ.. Max. Units Frequency Range DC Gain db Gain Flatness ±. ±.4 ±. db Gain Variation Over Temperature...4 db/ C Input Return Loss db Output Return Loss db Output Power for 1 db Compression (P1dB) dbm Saturated Output Power (Psat) dbm Output Third Order Intercept (IP3) Pout/tone = +1dBm dbm Noise Figure 3 4 db Supply Current (Idd) ma Supply Voltage (Vdd) V [1] Refer to application circuit section NOTE for the Vgg2 bias for different Vdd levels. [2] Adjust Vgg1 to achieve Idq = ma typical; Vgg1 = -.V typical. Product covered by one or more US and Foreign Patents: US Pat. Nos.,76,; 9,4,72; Patents Pending. 1 Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 96, Norwood, MA 2-96 Phone: Order online at Application Support: Phone: 1--ANALOG-D
2 v3.41 Low Frequency Gain & Return Loss 2 Gain & Return Loss 2 RESPONSE (db) S21 S11 S22 Gain vs. Temperature GAIN (db) C + C -4 C RESPONSE (db) Gain vs. Vdd GAIN (db) S21 S11 S V Gain vs. Idq 1 Input Return Loss vs. Temperature 16 - GAIN (db) RETURN LOSS (db) ma 3mA 4mA 4mA ma + C + C -4 C For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 96, Norwood, MA 2-96 Phone: Order online at Application Support: Phone: 1--ANALOG-D 2
3 v3.41 Input Return Loss vs. Vdd Input Return Loss vs. Idq RETURN LOSS (db) Output Return Loss vs. Temperature RETURN LOSS (db) V + C + C -4 C RETURN LOSS (db) ma 3mA 4mA 4mA Output Return Loss vs. Vdd RETURN LOSS (db) ma V Output Return Loss vs. Idq RETURN LOSS (db) Reverse Isolation vs. Temperature ISOLATION (db) ma 3mA 4mA 4mA ma + C + C -4 C 3 For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 96, Norwood, MA 2-96 Phone: Order online at Application Support: Phone: 1--ANALOG-D
4 v3.41 Noise Figure vs. Temperature Noise Figure vs. Vdd NOISE FIGURE (db) Noise Figure vs. Idq NOISE FIGURE (db) C + C -4 C ma 3mA 4mA 4mA ma NOISE FIGURE (db) Low Frequency P1dB vs. Temperature P1dB (dbm) C + C -4 C V P1dB vs. Temperature P1dB vs. Vdd P1dB (dbm) 2 P1dB (dbm) C + C -4 C V For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 96, Norwood, MA 2-96 Phone: Order online at Application Support: Phone: 1--ANALOG-D 4
5 v3.41 P1dB vs. Idq Low Frequency Psat vs. Temperature P1dB (dbm) ma 3mA Psat vs. Temperature Psat (dbm) 2 4mA 4mA ma C + C -4 C Psat (dbm) Psat vs. Vdd Psat (dbm) 2 + C + C -4 C V Psat vs. Idq Psat vs. Temperature Psat (dbm) PAE (%) ma 3mA 4mA 4mA ma + C + C -4 C For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 96, Norwood, MA 2-96 Phone: Order online at Application Support: Phone: 1--ANALOG-D
6 v3.41 Psat vs. Vdd Psat vs. Idq PAE (%) Power Pout(dBm), GAIN(dB), PAE(%) GAIN Pout PAE Idd V Idd (ma) PAE (%) ma 3mA 4mA 4mA Power GHz Pout(dBm), GAIN(dB), PAE(%) GAIN Pout PAE Idd ma Idd (ma) Power Pout(dBm), GAIN(dB), PAE(%) Idd (ma) Power C POWER DISSIPATION (W). 9. Max. Pdiss GAIN Pout PAE Idd GHz For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 96, Norwood, MA 2-96 Phone: Order online at Application Support: Phone: 1--ANALOG-D 6
7 v3.41 Gain & Power vs. 4 Gain & Power vs. GHz 4 GAIN (db), P1dB (dbm), Psat (dbm) Vdd (V) GAIN P1dB Psat Gain & Power vs. GAIN (db), P1dB (dbm), Psat (dbm) Vdd (V) GAIN P1dB Psat GAIN (db), P1dB (dbm), Psat (dbm) Vdd (V) GAIN P1dB Psat Gain & Power vs. GAIN (db), P1dB (dbm), Psat (dbm) Idq (ma) GAIN P1dB Psat Gain & Power vs. GHz 4 Gain & Power vs. 4 GAIN (db), P1dB (dbm), Psat (dbm) 3 2 GAIN (db), P1dB (dbm), Psat (dbm) Idq (ma) Idq (ma) GAIN P1dB Psat GAIN P1dB Psat 7 For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 96, Norwood, MA 2-96 Phone: Order online at Application Support: Phone: 1--ANALOG-D
8 v3.41 Low Frequency OIP3 vs. Pout/Tone = +1dBm OIP3 vs. Pout/Tone = +1dBm IP3 (dbm) C + C -4 C OIP3 vs. Pout/Tone = +1dBm IP3 (dbm) V IP3 (dbm) C + C -4 C OIP3 vs. Pout/Tone = +1dBm IP3 (dbm) ma 3mA 4mA 4mA ma Output Vdd = + IM3 (dbc) Output Vdd = + IM3 (dbc) GHz GHz For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 96, Norwood, MA 2-96 Phone: Order online at Application Support: Phone: 1--ANALOG-D
9 v3.41 Output Vdd = + 9 Output Vdd = + 9 IM3 (dbc) Output Vdd = +V IM3 (dbc) GHz GHz IM3 (dbc) SECOND HARMONICS (dbc) GHz Second Harmonics vs. Pout = +1dBm C + C -4 C Second Harmonics vs. Pout = +1dBm SECOND HARMONICS (dbc) V Second Harmonics vs. Pout SECOND HARMONIC (dbc) dbm +12 dbm +14 dbm FREQUENCY(GHz) +16 dbm +1 dbm +2 dbm +22 dbm + dbm 9 For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 96, Norwood, MA 2-96 Phone: Order online at Application Support: Phone: 1--ANALOG-D
10 v3.41 OIP2 vs. Pout/Tone = +1dBm IP2 (dbm) C + C -4 C OIP2 vs. Pout/Tone = +1dBm IP2 (dbm) ma 3mA 4mA 4mA ma OIP2 vs. Pout/Tone = +1dBm IP2 (dbm) Igg1 vs. Input Power Igg1 (ma) GHz V Igg2 vs. Input Power Igg2 Igg1 (ma) Idq vs. Vgg1 Representative of a Typical Device Idq (ma) Vgg1 (V) GHz For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 96, Norwood, MA 2-96 Phone: Order online at Application Support: Phone: 1--ANALOG-D
11 v3.41 Absolute Maximum Ratings Reliability Information Drain Bias Voltage (Vdd) Gate Bias Voltage (Vgg1) Gate Bias Voltage (Vgg2) RF Input Power (RFIN) Continuous Pdiss (T= C) (derate 9.9 mw/ C above C) +16 Vdc -3 to Vdc (Vdd-6V) up to +11. Vdc +27 dbm 9.9 W Output Load VSWR 7:1 Storage Temperature -6 to C Operating Temperature -4 to C ESD Sensitivity (HBM) Class 1A Max Peak Reflow Temperature C Outline Drawing PKG-6 PIN 1 INDICATOR.. SQ 4.9 TOP VIEW. BSC REF 1. SIDE VIEW MAX.3 NOM COPLANARITY SEATING. PLANE.23 REF Channel Temperature to Maintain 1 Million Hour MTTF Nominal Channel Temperature (T= C, Vdd = V) Thermal Resistance (channel to ground paddle) 17 C 3. C 9.1 C/W ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Stresses at or above those listed under Absolute Maximum Ratings may cause permanent damage to the product. This is a stress rating only, functional operation of the product at these or any other conditions above those indicated in the operational section of this specification is not implied. Operation beyond the maximum operating conditions for extended periods may affect product reliability EXPOSED PAD BOTTOM VIEW 3. REF 9 1 DETAIL A (JEDEC 9) PIN 1 INDICATOR AREA OPTIONS (SEE DETAIL A) SQ 3. FOR PROPER CONNECTION OF THE EXPOSED PAD, REFER TO THE PIN CONFIGURATION AND FUNCTION DESCRIPTIONS SECTION OF THIS DATA SHEET A -Lead Lead Frame Chip Scale Package, Premolded Cavity [LFCSP_CAV] mm mm and 1.mm Package Height (CG--2) Dimensions shown in millimeters. Package Information Part Number Package Body Material Lead Finish MSL Rating [1] Package Marking RoHS-compliant Low Stress Pre-Molded Plastic NiPdAu MSL3 HMC99A [1] Max peak reflow temperature of C 11 For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 96, Norwood, MA 2-96 Phone: Order online at Application Support: Phone: 1--ANALOG-D
12 v3.41 Pin Descriptions Pin Number Function Description Interface Schematic 1, 4, 6,, 9, 14, 16, 17, 2, 22,,, Package Bottom GND 2 VGG2 3, 7,, 11, 12, 1, 19, 23,, 27, 2, 31 N/C RFIN 13 VGG1 ACG3 21 RFOUT & Vdd These pins & exposed ground paddle must be connected to RF/DC ground. Gate control 2 for amplifier. External bypass capacitor required per application circuit herein. For nominal bias of V, +9.V should be applied to Vgg2. Refer to application circuit section NOTE for the Vgg2 bias for different Vdd levels. No connection required. These pins may be connected to RF/DC ground without affecting performance. This pin is DC coupled and matched to Ohms. Blocking capacitor is required. Gate control 1 for amplifier. Attach bypass capacitor per application circuit herein. Please follow MMIC Amplifier Biasing Procedure application note. Low Frequency termination. Attach bypass capacitor per application circuit herein. RF output for amplifier. Connect DC bias (Vdd) network to provide drain current (Idd). See application circuit herein. 29 ACG2 ACG1 Low frequency termination. Attach bypass capacitor per application circuit herein For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 96, Norwood, MA 2-96 Phone: Order online at Application Support: Phone: 1--ANALOG-D 12
13 v3.41 Evaluation PCB Evaluation Order Information Item Contents Part Number Evaluation PCB Only Evaluation PCB EV1HMC99APM [1] [1] Reference this number when ordering Evaluation PCB Only List of Materials for Evaluation Board EV1HMC99APM Item Description J1, J2 PCB Mount K Connector J3, J4 DC Pins Connector C1, C4 pf Capacitor, 42 Pkg. C2, C3 pf Capacitor, 42 Pkg. C - C C9 - C11 R1 U1 PCB [1].1uF Capacitor, 42 Pkg. 4.7 uf Capacitor, Tantalum. Ohm Resistor, 42 Pkg Evaluation PCB. [1] Circuit Board Material: Rogers 43 or Arlon FR The circuit board used in the application should use RF circuit design techniques. Signal lines should have Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of vias should be used to connect the top and bottom ground planes, including the grounds directly beneath the ground paddle, to provide for adequate electrical and thermal conduction. Use of a heatsink on the bottom side of the PCB is recommended. 13 For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 96, Norwood, MA 2-96 Phone: Order online at Application Support: Phone: 1--ANALOG-D
14 v3.41 Application Circuit NOTE 1: Drain Bias (Vdd) must be applied through a broadband bias tee or external bias network. NOTE 2. External DC block required at RF input. NOTE 3: Optional capacitors to be used if part is to be operated below 2MHz. NOTE 4: External capacitors required to maintain nominal gain at low frequency band. NOTE : Refer to table below for the recommended Vgg2 bias for different Vdd supply voltage. Vdd (V) Vgg2 (V) For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 96, Norwood, MA 2-96 Phone: Order online at Application Support: Phone: 1--ANALOG-D 14
Features. = +25 C, Vdd = +10 V, Idd = 350 ma
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More informationAnalog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED
Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK v.51 HMC7LP5E POWER AMPLIFIER,.2
More informationFeatures. = +25 C, Vdd = +5V, Idd = 400mA [1]
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9 1 11 12 13 14 1 16 32 GND 31 29 28 27 26 FEATURES High saturated output power (PSAT):. dbm typical High small signal gain: 18. db typical High power added efficiency (PAE): 69% typical Instantaneous
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Typical Applications Ideal as a Driver & Amplifier for: 2.2-2.7 GHz MMDS 3. GHz Wireless Local Loop - 6 GHz UNII & HiperLAN Functional Diagram Features P1dB Output Power: +14 dbm Output IP3: +27 dbm Gain:
More informationAnalog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED
Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK v1.414 Typical Applications The HMC5846LS6
More informationParameter Min. Typ. Max. Units Frequency Range GHz
v.312 27-31. GHz Typical Applications The is ideal for: Point-to-Point Radio Point-to-Multi-Point Radio EW & ECM Subsystems Ka-Band Radar & VSAT Test Equipment Functional Diagram Features Wide Gain Control
More informationFeatures. Gain: 14.5 db. Electrical Specifications [1] [2] = +25 C, Rbias = 825 Ohms for Vdd = 5V, Rbias = 5.76k Ohms for Vdd = 3V
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Data Sheet FEATURES Output power for db compression (PdB): 6 dbm typical Saturated output power (PSAT): 9. dbm typical Gain: db typical Noise figure:. db typical Output third-order intercept (IP3): 6 dbm
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ACG ACG ACG FEATURES Low noise figure:. db PdB output power:. dbm PSAT output power: 7. dbm High gain: db Output IP: 9 dbm Supply voltage: VDD = 7 V at 7 ma Ω matched input/output (I/O) -lead mm mm SMT
More informationAnalog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED
Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK v3.38 POWER AMPLIFIER, 2-2 GHz Typical
More informationFeatures. = +25 C, 50 Ohm system
HMC12ALC4 Typical Applications v7.617 ATTENUATOR, 5-3 GHz Features The HMC12ALC4 is ideal for: Point-to-Point Radio VSAT Radio Test Instrumentation Microwave Sensors Military, ECM & Radar Functional Diagram
More informationHMC1040LP3CE. Amplifiers - Low Noise - smt. GaAs phemt MMIC LOW NOISE AMPLIFIER, GHz. Features. Typical Applications. General Description
v.112 HMC14LP3CE AMPLIFIER, 24-43. GHz Typical Applications This HMC14LP3BE is ideal for: Point-to-Point Radios Test Instrumentation SatCom Transponders & VSAT Industrial Sensors EW & ECM Subsystems Functional
More informationAnalog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED
Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK v.51 HMC32LC Typical Applications
More informationAnalog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED
Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK v1.14 AMPLIFIER, 18-4 GHz Typical
More informationFeatures. = +25 C, Vdd= 5V. Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units. Frequency Range GHz
Typical Applications The HMC62LP / HMC62LPE Wideband LNA is ideal for: Telecom Infrastructure Microwave Radio & VSAT Military EW, ECM & C 3 I Test Instrumentation Fiber Optics Functional Diagram Features
More informationFeatures. = +25 C, Vdd = +10V, Idd = 350mA
Typical Applications The is ideal for: Test Instrumentation Military & Space Functional Diagram Features High P1dB Output Power: +28 dbm High : 14 db High Output IP3: +41 dbm Single Supply: +V @ 3 ma Ohm
More informationFeatures. = +25 C, With 0/+5V Control, 50 Ohm System
Typical Applications This switch is suitable for usage in 50-Ohm or 75-Ohm systems: Broadband Fiber Optics Switched Filter Banks Wireless below 8 GHz Functional Diagram Features Broadband Performance:
More informationFeatures. = +25 C, Vdd= 8V, Idd= 75 ma*
HMC46LC5 Typical Applications v3.11 AMPLIFIER, DC - 2 GHz Features The HMC46LC5 is ideal for: Noise Figure: 2.5 db @ 1 GHz Telecom Infrastructure Microwave Radio & VSAT Military & Space Test Instrumentation
More informationFeatures. = +25 C, Vdd = 5V, Vgg1 = Vgg2 = Open
v3.117 HMC441LM1 Typical Applications The HMC441LM1 is a medium PA for: Point-to-Point Radios Point-to-Multi-Point Radios VSAT LO Driver for HMC Mixers Military EW & ECM Functional Diagram Vgg1, Vgg2:
More informationOBSOLETE. = +25 C, Vdd = Vs= +5V, Vctl= 0/ +5V. Parameter Frequency Min. Typ. Max. Units DC GHz 37. db Gain (Maximum Gain State)
v.1212.5 db LSB GaAs MMIC 6-BIT DIGITAL Typical Applications The is ideal for: IF & RF Applications Cellular/3G Infrastructure WiBro / WiMAX / 4G Microwave Radio & VSAT Test Equipment and Sensors Functional
More informationFeatures. = +25 C, 50 Ohm system. DC - 10GHz DC - 14 Ghz DC - 10 GHz DC - 14 GHz Return Loss DC - 14 GHz 5 10 db
Typical Applications v2.717 Features The is ideal for: Basestation Infrastructure Fiber Optics & Broadband Telecom Microwave Radio & VSAT Military Radios, Radar, & ECM Test Instrumentation Functional Diagram
More informationFeatures OBSOLETE. = +25 C, Rbias = 0 Ohm. Bypass Mode Failsafe Mode Parameter
7 Typical Applications The HMC668LP3(E) is ideal for: Cellular/3G and LTE/WiMAX/4G BTS & Infrastructure Repeaters and Femtocells Tower Mounted Amplifiers Test & Measurement Equipment Functional Diagram
More informationFeatures. Parameter Frequency (GHz) Min. Typ. Max. Units GHz GHz GHz. Attenuation Range GHz 15.
v.6.5 LSB GaAs MMIC 5-BIT DIGITAL ATTENUATOR,. - 33 GHz Typical Applications Features The is ideal for: Fiber Optics & Broadband Telecom Microwave Radio & VSAT Military Radios, Radar & ECM Space Applications
More informationFeatures
HMC37SC7E v1.1.3-3. GHz Typical Applications The HMC37SC7E is ideal for: Cellular/PCS/3G WCS, mmds & ism Fixed Wireless & WLAN Private Land Mobile Radio Functional Diagram Features Single Supply: Vdd =
More informationHMC906A. Amplifiers - Linear & Power - CHIP. Electrical Specifications, T A. Typical Applications. Features. General Description. Functional Diagram
Typical Applications Features The HMC96A is ideal for: Satellite Communications Point-to-Point Radios Point-to-Multi-Point Radios VSAT Military & Space Functional Diagram Saturated Output Power: +33.5
More informationFeatures. DC GHz GHz GHz DC GHz GHz GHz GHz DC - 4 GHz GHz Supply Current (Icq) ma
HMC311ST9 / 311ST9E v.17 MMIC AMPLIFIER, DC - GHz Typical Applications The HMC311ST9(E) is ideal for: Cellular / PCS / 3G Fixed Wireless & WLAN CATV & Cable Modem Microwave Radio Functional Diagram Features
More informationFeatures OBSOLETE. Saturated Output Power (Psat) dbm Output Third Order Intercept (IP3) dbm Supply Current (Idd) ma
7 Typical Applications The HMC667LP2(E) is ideal for: WiMAX, WiBro & Fixed Wireless SDARS & WLAN Receivers Infrastructure & Repeaters Access Points Telematics & DMB Functional Diagram v2.11 Electrical
More informationHMC695LP4 / HMC695LP4E
v.1 Typical Applications The HMC95LP(E) is ideal for: Fiber Optic Applications Point-to-Point Radios Military Radar Functional Diagram Features Output Power: +7 dbm Sub-Harmonic Suppression: >5 dbc SSB
More informationFeatures. = +25 C, 50 Ohm system
v6.312 Typical Applications Features The E is ideal for: Point-to-Point Radio VSAT Radio Test Instrumentation Microwave Sensors Military, ECM & Radar Functional Diagram Wide Bandwidth: 5-26.5 GHz Excellent
More informationFeatures. = +25 C, Vdd = +5V, Rbias = 10 Ohms*
Typical Applications Functional Diagram The HMC36LP3 / HMC36LP3E is ideal for: Cellular/3G Infrastructure Base Stations & Repeaters CDMA, W-CDMA, & TD-SCDMA Private Land Mobile Radio GSM/GPRS & EDGE UHF
More information20 MHz to 500 MHz IF Gain Block ADL5531
Data Sheet FEATURES Fixed gain of 20 db Operation up to 500 MHz Input/output internally matched to 50 Ω Integrated bias control circuit Output IP3 41 dbm at 70 MHz 39 dbm at 190 MHz Output 1 db compression:
More information20 GHz to 44 GHz, GaAs, phemt, MMIC, Low Noise Amplifier HMC1040CHIPS
Data Sheet FEATURES Low noise figure: 2 db typical High gain: 25. db typical P1dB output power: 13.5 dbm, 2 GHz to GHz High output IP3: 25.5 dbm typical Die size: 1.39 mm 1..2 mm APPLICATIONS Software
More informationHMC662LP3E POWER DETECTORS - SMT. 54 db, LOGARITHMIC DETECTOR, 8-30 GHz. Typical Applications. Features. Functional Diagram. General Description
Typical Applications The is ideal for: Point-to-Point Microwave Radio VSAT Wideband Power Monitoring Receiver Signal Strength Indication (RSSI) Test & Measurement Functional Diagram Features Wide Input
More information6 GHz to 26 GHz, GaAs MMIC Fundamental Mixer HMC773ALC3B
FEATURES Conversion loss: 9 db typical Local oscillator (LO) to radio frequency (RF) isolation: 37 db typical LO to intermediate frequency (IF) isolation: 37 db typical RF to IF isolation: db typical Input
More informationGaAs, phemt, MMIC, Power Amplifier, HMC1126. Data Sheet FEATURES FUNCTIONAL BLOCK DIAGRAM APPLICATIONS GENERAL DESCRIPTION
Data Sheet GaAs, phemt, MMIC, Power Amplifier, GHz to GHz FEATURES FUNCTIONAL BLOCK DIAGRAM Output power for 1 db compression (P1dB): 1. db typical Saturated output power (PSAT): 1 dbm typical Gain: 11
More informationFeatures. Output Third Order Intercept (IP3) [2] dbm Power Added Efficiency %
v5.1217 HMC187 2-2 GHz Typical Applications The HMC187 is ideal for: Test Instrumentation General Communications Radar Functional Diagram Features High Psat: +39 dbm Power Gain at Psat: +5.5 db High Output
More informationHMC629ALP4E. 3 db LSB GaAs MMIC 4-BIT DIGITAL ATTENUATOR, DC - 10GHz. Typical Applications. Functional Diagram. General Description
v1.716 DIGITAL ATTENUATOR, DC - 1GHz Typical Applications The is ideal for: Cellular/3G Infrastructure WiBro / WiMAX / 4G Microwave Radio & VSAT Test Equipment and Sensors IF & RF Applications Functional
More informationDC to 1000 MHz IF Gain Block ADL5530
Data Sheet FEATURES Fixed gain of 16. db Operation up to MHz 37 dbm Output Third-Order Intercept (OIP3) 3 db noise figure Input/output internally matched to Ω Stable temperature and power supply 3 V or
More informationHigh Isolation, Silicon SP4T, Nonreflective Switch, 9 khz to 12.0 GHz ADRF5040
RF4 RF3 7 8 9 1 11 12 21 2 19 RF2 High Isolation, Silicon SP4T, Nonreflective Switch, 9 khz to 12. GHz ADRF54 FEATURES FUNCTIONAL BLOCK DIAGRAM Nonreflective 5 Ω design Positive control range: V to 3.3
More informationGaAs, MMIC Fundamental Mixer, 2.5 GHz to 7.0 GHz HMC557A
FEATURES Conversion loss: db LO to RF isolation: db LO to IF isolation: 3 db Input third-order intercept (IP3): 1 dbm Input second-order intercept (IP2): dbm LO port return loss: dbm RF port return loss:
More informationHMC849ALP4CE SWITCHES - SPDT - SMT. HIGH ISOLATION SPDT NON-REFLECTIVE SWITCH, DC - 6 GHz. Typical Applications. Features. Functional Diagram
Typical Applications The is ideal for: Cellular/4G Infrastructure WiMAX, WiBro & Fixed Wireless Automotive Telematics Mobile Radio Test Equipment Functional Diagram Features High Isolation: up to Single
More informationHMC6380LC4B. WIDEBAND VCOs - SMT. Electrical Specifications, T A. Typical Applications. Features. General Description. Functional Diagram
Typical Applications Low Noise wideband MMIC VCO is ideal for: Industrial/Medical Equipment Test & Measurement Equipment Satcom Military Radar, EW, & ECM Functional Diagram Features Wide Tuning Bandwidth
More information5.5 GHz to 8.6 GHz, GaAs, MMIC, I/Q Upconverter HMC6505A
Data Sheet FEATURES Conversion gain: db typical Sideband rejection: dbc typical Output P1dB compression at maximum gain: dbm typical Output IP3 at maximum gain: dbm typical LO to RF isolation: db typical
More informationParameter Frequency (GHz) Min. Typ. Max. Units DC GHz GHz GHz Attenuation Range DC GHz 31.5 db
Typical Applications The is ideal for: 3G Infrastructure & access points Cellular/3G, LTE & UMB WiMAX, WiBN & Fixed Wireless Test Equipment and Sensors GSM, WCDMA & TD-SCDMA Functional Diagram Features.5
More informationFeatures. = +25 C, IF = 100 MHz, LO = +13 dbm, LSB [1]
v1.6 3.5 - GHz Typical Applications The HMC21BMSGE is ideal for: Base stations, Repeaters & Access Points WiMAX, WiBro & Fixed Wireless Portables & Subscribers PLMR, Public Safety & Telematics Functional
More information20 MHz to 500 MHz IF Gain Block ADL5531
20 MHz to 500 MHz IF Gain Block ADL5531 FEATURES Fixed gain of 20 db Operation up to 500 MHz Input/output internally matched to 50 Ω Integrated bias control circuit Output IP3 41 dbm at 70 MHz 39 dbm at
More informationFeatures. = +25 C, Vdd = +5V, 5 dbm Drive Level
v1.4 Typical Applications The HMC561LP3E are suitable for: Clock Generation Applications: SONET OC-192 & SDH STM-64 Point-to-Point & VSAT Radios Test Instrumentation Military & Space Functional Diagram
More information2 GHz to 30 GHz, GaAs, phemt, MMIC, Low Noise Amplifier HMC8402
2 GHz to 3 GHz, GaAs, phemt, MMIC, Low Noise Amplifier HMC842 FEATURES Output power for 1 db compression (P1dB): 21. dbm typical Saturated output power (PSAT): 22 dbm typical Gain: 13. db typical Noise
More informationOBSOLETE HMC915LP4E. GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, GHz. Typical Applications. Features. Functional Diagram. General Description
v1.5 LO AMPLIFIER,.5-2.7 GHz Typical Applications The is ideal for: PCS / 3G Infrastructure Base Stations & Repeaters WiMAX & WiBro ISM & Fixed Wireless Functional Diagram Features Input IP3: +28 dbm Low
More informationHMC540SLP3E v db LSB SILICON MMIC 4-BIT DIGITAL POSITIVE CONTROL ATTENUATOR, GHz
HMC54SLP3E v.95 LSB SILICON MMIC 4-BIT DIGITAL POSITIVE CONTROL ATTENUATOR,. - 8 GHz Typical Applications Features The HMC54SLP3E is ideal for both RF and IF applications: Cellular Infrastructure Wireless
More information= +25 C, Vdd = Vs= P/S= +5V
v.3.5 db LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN Typical Applications The HMC68ALP5E is ideal for: IF & RF Applications Cellular/3G Infrastructure WiBro / WiMAX / 4G Microwave Radio & VSAT Test Equipment
More informationNonreflective, Silicon SP4T Switch, 0.1 GHz to 6.0 GHz HMC7992
Nonreflective, Silicon SP4T Switch,.1 GHz to 6. GHz FEATURES Nonreflective, 5 Ω design High isolation: 45 db typical at 2 GHz Low insertion loss:.6 db at 2 GHz High power handling 33 dbm through path 27
More informationGaAs, phemt, MMIC, Power Amplifier, 2 GHz to 50 GHz HMC1126
GaAs, phemt, MMIC, Power Amplifier, 2 GHz to GHz FEATURES FUNCTIONAL BLOCK DIAGRAM Output power for 1 db compression (P1dB): 1. db typical Saturated output power (PSAT): dbm typical Gain: 11 db typical
More informationFeatures. = +25 C, With 0/-5V Control, 50 Ohm System. Parameter Frequency Min. Typ. Max. Units
Typical Applications The is ideal for: Basestation Infrastructure Fiber Optics & Broadband Telecom Microwave Radio & VSAT Military Radios, Radar, & ECM Test Instrumentation Functional Diagram Features
More informationFeatures OBSOLETE. = +25 C, as a function of Vdd. Vdd = +3V Vdd = +5V Vdd = +5V Vdd = +5V Parameter
v5.117 HMC3 / 3E GENERAL PURPOSE 1 mw GaAs MMIC AMPLIFIER,. - 3. GHz Typical Applications Broadband or Narrow Band Applications: Cellular/PCS/3G Fixed Wireless & Telematics Cable Modem Termination Systems
More informationFeatures. = +25 C, Vs = +5V. Parameter Min. Typ. Max. Min. Typ. Max. Units Frequency Range MHz Gain
Typical Applications Functional Diagram The HMC32LP3 / HMC32LP3E is ideal for basestation receivers: GSM, GPRS & EDGE CDMA & W-CDMA Private Land Mobile Radio HMC32LP3 / 32LP3E AMPLIFIER, 00-1000 MHz Features
More informationHMC998. Amplifiers - Linear & Power - Chip. GaAs phemt MMIC 2 WATT POWER AMPLIFIER, GHz. Electrical Specifications, T A.
v1.811 2 WATT POWER AMPLIFIER,.1-22 GHz Typical Applications Features The is ideal for: Test Instrumentation Microwave Radio & VSAT Military & Space Telecom Infrastructure Fiber Optics Functional Diagram
More informationHMC471MS8G / 471MS8GE. Features OBSOLETE. DC GHz GHz GHz GHz GHz
v1.65 Typical Applications The HMC471MSG / HMC471MSGE is a dual RF/IF gain block & LO or PA driver: Cellular / PCS / 3G Fixed Wireless & WLAN CATV, Cable Modem & DBS Microwave Radio & Test Equipment Functional
More informationFeatures. = +25 C, With 0/-5V Control, 50 Ohm System. Parameter Frequency Min. Typ. Max. Units. DC - 20 GHz 2
Typical Applications The is ideal for: Basestation Infrastructure Fiber Optics & Broadband Telecom Microwave Radio & VSAT Military Radios, Radar, & ECM Test Instrumentation Functional Diagram Features
More information10 W, Failsafe, GaAs, SPDT Switch 0.2 GHz to 2.7 GHz HMC546LP2E
FEATURES High input P.dB: 4 dbm Tx Low insertion loss:.4 db High input IP3: 67 dbm Positive control: V low control; 3 V to 8 V high control Failsafe operation: Tx is on when no dc power is applied APPLICATIONS
More information