Features. = +25 C, Vs = +5V. Parameter Min. Typ. Max. Min. Typ. Max. Units Frequency Range MHz Gain

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1 Typical Applications Functional Diagram The HMC32LP3 / HMC32LP3E is ideal for basestation receivers: GSM, GPRS & EDGE CDMA & W-CDMA Private Land Mobile Radio HMC32LP3 / 32LP3E AMPLIFIER, MHz Features Noise Figure: < 1 db Output IP3: +34 dbm Gain: db Very Stable Gain vs. Supply & Temperature Single Supply: 100 ma 50 Ohm Matched Output General Description The HMC32LP3 & HMC32LP3E are GaAs PHEMT MMIC Low Noise Amplifi ers that are ideal for GSM & CDMA cellular basestation front-end receivers operating between 00 and 1000 MHz. The amplifi er has been optimized to provide 1 db noise fi gure, db gain and +34 dbm output IP3 from a single supply of 100 ma. Input and output return losses are 25 and 14 db respectively with the LNA requiring only four external components to optimize the RF Input match, RF ground and DC bias. For applications which require improved noise fi gure, please see the HMC61LP3(E). Electrical Specifications, T A = +25 C, Vs = +5V Parameter Min. Typ. Max. Min. Typ. Max. Units Frequency Range MHz Gain db Gain Variation Over Temperature db / C Noise Figure db Input Return Loss db Output Return Loss db Reverse Isolation 22 db Output Power for 1dB Compression (P1dB) 21 1 dbm Saturated Output Power (Psat) dbm Output Third Order Intercept (IP3) (- dbm Input Power per tone, 1 MHz tone spacing) dbm Supply Current (Idd) ma - 52 Phone: Fax: Order On-line at Application Support: Phone: or apps@hittite.com

2 Broadband Gain & Return Loss RESPONSE (db) Gain vs. Temperature GAIN (db) C + 85 C - 40 C S21 S11 S Gain, Noise Figure & Power vs. Supply 850MHz GAIN (db) & P1dB (dbm) Noise Figure vs. Temperature NOISE FIGURE (db) HMC32LP3 / 32LP3E AMPLIFIER, MHz Gain P1dB VOLTAGE SUPPLY (Vdd) + 25 C + 85 C - 40 C Noise Figure NOISE FIGURE (db) Gain vs. Vdd GAIN (db) V V V Noise Figure vs. Vdd NOISE FIGURE (db) V V V Phone: Fax: Order On-line at Application Support: Phone: or apps@hittite.com - 53

3 Input Return Loss vs. Temperature HMC32LP3 / 32LP3E AMPLIFIER, MHz Output Return Loss vs. Temperature RETURN LOSS (db) Output IP3 vs. Temperature OUTPUT IP3 (dbm) C + 85 C - 40 C C + 85 C - 40 C RETURN LOSS (db) P1dB & Psat vs. Temperature COMPRESSION POINT (dbm) P1dB PSAT +25 C +85 C -40 C C +85 C -40 C Output IP3 vs. Vdd OUTPUT IP3 (dbm) V V V P1dB vs. Vdd P1dB (dbm) V V V Phone: Fax: Order On-line at Application Support: Phone: or apps@hittite.com

4 Output IP3 vs. Input 950 MHz OUTPUT IP3 (dbm) MHz Tone Separation 6 MHz Tone Separation INPUT POWER PER TONE (dbm) Absolute Maximum Ratings Drain Bias Voltage (Vdd) +8.0 Vdc RF Input Power (RFIN)(Vs = +5.0 Vdc) + dbm Channel Temperature 0 C Continuous Pdiss (T = 85 C) (derate.6 mw/ C above 85 C) 1.0 W Thermal Resistance (channel to ground paddle) 64.1 C/W Storage Temperature -65 to +0 C Operating Temperature -40 to +85 C Reverse Isolation vs. Temperature ISOLATION (db) HMC32LP3 / 32LP3E AMPLIFIER, MHz +25 C +85 C -40 C Typical Supply Current vs. Vdd Vdd (Vdc) Idd (ma) ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Phone: Fax: Order On-line at Application Support: Phone: or apps@hittite.com - 55

5 HMC32LP3 / 32LP3E Outline Drawing AMPLIFIER, MHz Package Information NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 4. PAD BURR LENGTH SHALL BE 0.mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND.. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Part Number Package Body Material Lead Finish MSL Rating Package Marking [3] [1] H32 HMC32LP3 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 XXXX [2] H32 HMC32LP3E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 XXXX [1] Max peak refl ow temperature of 235 C [2] Max peak refl ow temperature of 260 C [3] 4-Digit lot number XXXX - 56 Phone: Fax: Order On-line at Application Support: Phone: or apps@hittite.com

6 HMC32LP3 / 32LP3E Pin Descriptions AMPLIFIER, MHz Pin Number Function Description Interface Schematic 1, 5, 8, 9 N/C 2, 4, 6, 10, 12, 13, 14, GND 3 RF IN, ACG Vdd No connection necessary. These pins may be connected to RF/DC ground. These pins must be connected to RF/DC ground. This pin is matched to 50 Ohms with a 22 nh inductor to ground. See Application Circuit. AC Ground - An external capacitor of 0.01μF to ground is required for low frequency bypassing. See Application Circuit for further details. Power supply voltage. Choke inductor and bypass capacitor are required. See application circuit. 11 RF OUT This pin is AC coupled and matched to 50 Ohms. Application Circuit Note 1: Choose value of capacitor C1 for low frequency bypassing. A 0.01 μf ±10% capacitor is recommended. Note 2: L1, L2 and C1 should be located as close to the pins as possible. Phone: Fax: Order On-line at Application Support: Phone: or apps@hittite.com - 5

7 HMC32LP3 / 32LP3E Evaluation PCB AMPLIFIER, MHz List of Materials for Evaluation PCB [1] Item J1 - J2 J3 - J4 C1 C2 L1 L2 U1 PCB [2] Description PCB Mount SMA RF Connector DC Pin pf Capacitor, 0402 Pkg pf Capacitor, 0060 Pkg. 22nH Inductor, 0402 Pkg. nh Inductor, 0603 Pkg. HMC32LP3 / HMC32LP3E Amplifi er Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 The circuit board used in the application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request Phone: Fax: Order On-line at Application Support: Phone: or apps@hittite.com

8 HMC32LP3 / 32LP3E Notes: AMPLIFIER, MHz Phone: Fax: Order On-line at Application Support: Phone: or apps@hittite.com - 59