HMC5805ALS6 AMPLIFIERS - LINEAR & POWER - SMT. Typical Applications. Features. Functional Diagram

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1 HMC585ALS6 v2.517 GaAs phemt MMIC.25 WATT POWER AMPLIFIER DC - 4 GHz Typical Applications The HMC585ALS6 is ideal for: Test Instrumentation Microwave Radio & VSAT Military & Space Telecom Infrastructure Fiber Optics Functional Diagram Features High P1dB Output Power:.5 dbm High Psat Output Power: 27 dbm Gain: 11.5 db Output IP3: 29 dbm Supply Voltage: ma Lead Ceramic 6x6 mm SMT Package: 36 mm 2 General Description The HMC585ALS6 is a GaAs phemt MMIC Distributed Power Amplifier which operates between DC and 4 GHz. The amplifier provides 11.5 db of gain, 29 dbm output IP3 and + dbm of output power at 1 db gain compression while requiring 175 ma from a +1 V supply. The HMC585ALS6 is ideal for EW, ECM, Radar and test equipment applications. The HMC585ALS6 amplifier I/Os are internally matched to 5 Ohms and the 6x6 mm SMT package is well suited for automated assembly techniques. Electrical Specifications, T A = +25 C, Vdd = +1 V, Vgg2 = +3.5 V, Idd = 175 ma* Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units Frequency Range DC GHz Gain db Gain Flatness ±1. ±.75 ±.75 db Gain Variation Over Temperature db/ C Input Return Loss db Output Return Loss 13 9 db Output Power for 1 db Compression (P1dB) dbm Saturated Output Power (Psat) dbm Output Third Order Intercept (IP3) dbm Noise Figure db Supply Current (Idd) (Vdd= 1V, Vgg1= -.8V Typ.) * Adjust Vgg1 between -2 to V to achieve Idd = 175 ma typical ma 1 Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9, Norwood, MA 62-9 Phone: Order online at Application Support: Phone: 1-8-ANALOG-D

2 HMC585ALS6 v2.517 GaAs phemt MMIC.25 WATT POWER AMPLIFIER DC - 4 GHz Gain & Return Loss Gain vs. Temperature RESPONSE (db) S21 S11 S Input Return Loss vs. Temperature RETURN LOSS (db) C +85C -4C GAIN (db) C +85C -4C Output Return Loss vs. Temperature RETURN LOSS (db) C +85C -4C Noise Figure vs. Temperature 1 P1dB vs. Temperature NOISE FIGURE(dB) P1dB (dbm) C +85C -4C +25C +85C -4C For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9, Norwood, MA 62-9 Phone: Order online at Application Support: Phone: 1-8-ANALOG-D 2

3 HMC585ALS6 v2.517 GaAs phemt MMIC.25 WATT POWER AMPLIFIER DC - 4 GHz P1dB vs. Supply Voltage Psat vs. Temperature P1dB (dbm) V +1V +11V Psat vs. Supply Voltage Psat (dbm) V +1V +11V Psat (dbm) C +85C -4C P1dB vs. Supply Current P1dB (dbm) ma 175 ma Psat vs. Supply Current Output IP3 vs. Pout=12 dbm / Tone 4 36 Psat (dbm) IP3 (dbm) ma 175 ma +25C +85C -4C 3 For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9, Norwood, MA 62-9 Phone: Order online at Application Support: Phone: 1-8-ANALOG-D

4 HMC585ALS6 v2.517 GaAs phemt MMIC.25 WATT POWER AMPLIFIER DC - 4 GHz Output IP3 vs. Supply Pout=12 dbm / Tone 4 Output Vdd=+8V 8 IP3 (dbm) V +1V +11V Output Vdd=+1V IM3 (dbc) GHz 8 GHz 14 GHz GHz Pout/TONE (dbm) GHz GHz GHz IM3 (dbc) GHz 8GHz 14GHz GHz Pout/TONE (dbm) Output Vdd=+11V IM3 (dbc) GHz GHz GHz Pout/TONE (dbm) 2 GHz 8 GHz 14 GHz GHz GHz GHz GHz Reverse Isolation vs. Temperature ISOLATION (db) Power GHz Pout(dBm), GAIN(dB), PAE(%) Idd (ma) C +85C -4C INPUT POWER (dbm) Pout Gain PAE Idd For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9, Norwood, MA 62-9 Phone: Order online at Application Support: Phone: 1-8-ANALOG-D 4

5 HMC585ALS6 v2.517 GaAs phemt MMIC.25 WATT POWER AMPLIFIER DC - 4 GHz Gain and Power vs. Supply Voltage Gain and Power vs. Supply Current Gain (db), P1dB (dbm), Psat (dbm) GAIN(dB) P1dB(dBm) Vdd (V) Power 85C POWER DISSIPATION (W) Psat(dBm) INPUT POWER (dbm) 4GHz 1GHz GHz GHz Gain (db), P1dB (dbm), Psat (dbm) Idd (ma) GAIN(dB) P1dB(dBm) Psat(dBm) Second Harmonics vs. Pout=14 dbm SECOND HARMONIC (dbc) FREQUENCY(GHz) +25C +85C -4C Second Harmonics vs. Pout=14 dbm 6 Second Harmonics vs. Pout 6 SECOND HARMONIC (dbc) SECOND HARMONIC (dbc) FREQUENCY(GHz) FREQUENCY(GHz) +8V +1V +11V +4dBm +6dBm +8dBm +1dBm +12dBm +14dBm 5 For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9, Norwood, MA 62-9 Phone: Order online at Application Support: Phone: 1-8-ANALOG-D

6 HMC585ALS6 v2.517 GaAs phemt MMIC.25 WATT POWER AMPLIFIER DC - 4 GHz Absolute Maximum Ratings Typical Supply Current vs. Vdd Drain Bias Voltage (Vdd) 12V Vdd (V) Idd (ma) Gate Bias Voltage (Vgg1) Gate Bias Voltage (Vgg2) RF Input Power (RFIN) -3 to Vdc For Vdd = 12V, Vgg2 = 5.5V Idd >145mA For Vdd between 8.5V to 11V, Vgg2 = (Vdd - 6.5V) up to 4.5V For Vdd < 8.5V, Vgg2 must remain > 2V dbm Channel Temperature 175 C Continuous Pdiss (T= 85 C) (derate 32.2 mw/ C above 85 C) Thermal Resistance (channel to ground paddle) 2.89 W 31.1 C/W Storage Temperature -65 to 15 C Operating Temperature -4 to 85 C ESD Sensitivity (HBM) Outline Drawing Class1B Passed 5V Note: Amplifier will operate over full voltage ranges shown above. Vgg adjusted to achieve Idd = 175 ma. ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS -Terminal Ceramic Leadless Chip Carrier with Heat Sink [LCC_HS] Dimensions shown in millimeters. Table 1. Package Information Part Number Package Body Material Lead Finish MSL Rating Package Option Package Marking [1] HMC585ALS6 ALUMINA, WHITE Gold over Nickel MSL3 EP--2 HMC585ALS6TR ALUMINA, WHITE Gold over Nickel MSL3 EP--2 [1] 4-Digit lot number XXXX H585A XXXX H585A XXXX For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9, Norwood, MA 62-9 Phone: Order online at Application Support: Phone: 1-8-ANALOG-D 6

7 HMC585ALS6 v2.517 GaAs phemt MMIC.25 WATT POWER AMPLIFIER DC - 4 GHz Pin Descriptions Pin Number Function Description Interface Schematic ACG2 ACG1 1, 2, 14 RFOUT & VDD 3 VGG2 6 RFIN 9 VGG1 1 ACG4 11 ACG3 5, 7, 13, 15 GND 4, 8, 12, N/C Low frequency termination. Attach bypass capacitor per application circuit herein. Low frequency termination. Attach bypass capacitor per application circuit herein. RF output for amplifier. Connect DC bias (VDD) network to provide drain current (Idd). See application circuit herein. Gate control 2 for amplifier. Attach bypass capacitors per application circuit herein. For normal operation +3.5V should be applied to Vgg2. This pin is DC coupled and matched to 5 Ohms. Blocking capacitor is required. Gate control 1 for amplifier. Attach bypass capacitors per application circuit herein. Please follow MMIC Amplifier Biasing Procedure application note. Low frequency termination. Attach bypass capacitor per application circuit herein. Low frequency termination. Attach bypass capacitor per application circuit herein. These pins and exposed ground paddle must be connected to RF/DC ground. These pins are not connected internally; however, all data shown herein was measured with these pins connected to RF/DC ground externally. 7 For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9, Norwood, MA 62-9 Phone: Order online at Application Support: Phone: 1-8-ANALOG-D

8 Application Information BIASING PROCEDURES: HMC585ALS6 v2.517 GaAs phemt MMIC.25 WATT POWER AMPLIFIER DC - 4 GHz DC bias must be applied to the drain via an RF choke/inductor connection to the RFOUT/VDD pin. Gate bias must be applied to VGG1 and VGG2. Capacitive bypassing is recommended for all of the DC bias pins and AC terminations to ground are recommended for ACG1-ACG4, as shown in the Application Circuit. The recommended bias sequence during power-up is as follows: 1. Set VGG1 to 2. V to pinch off the channels of the lower FETs. 2. Set VDD to 1. V. Because the lower FETs are pinched off, IDQ remains very low upon application of VDD. 3. Set VGG2 to 3.5 V. 3. Adjust VGG1 to be more positive until a quiescent drain current of 175 ma has been obtained. 4. Apply the RF input signal. The recommended bias sequence during power-down is as follows: 1. Turn off the RF input signal. 2. Set VGG1 to 2. V to pinch off the channels of the lower FETs. 3. Set VGG2 to V. 4. Set VDD to V. 5. Set VGG1 to V. Power-up and power-down sequences may differ from the ones described, though care must always be taken to ensure adherence to the values shown in the Absolute Maximum Ratings. Unless otherwise noted, all measurements and data shown were taken using the typical application circuit as configured on our evaluation board. The bias conditions shown in the specifications section are the operating points recommended to optimize the overall performance. Operation using other bias conditions may provide performance that differs from what is shown in this data sheet. Application Circuit NOTE 1: Drain Bias (Vdd) must be applied through a broadband bias tee with low series resistance and capable of providing 25 ma For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9, Norwood, MA 62-9 Phone: Order online at Application Support: Phone: 1-8-ANALOG-D 8

9 HMC585ALS6 v2.517 GaAs phemt MMIC.25 WATT POWER AMPLIFIER DC - 4 GHz Evaluation PCB List of Materials for Evaluation EV1HMC585ALS6 [1] Item Description J1, J2 PCB Mount K Connectors, SRI J5, J6 DC Pins C3 - C5 1 pf Capacitors, 42 Pkg. C8 - C11.1 μf Capacitors, 63 Pkg. C13, C15, C, C 4.7 μf Capacitors, Case A Pkg. R2 Zero Ohm Resistor, 42 Pkg. U1 HMC585ALS6 Amplifier PCB [2] 1996 Evaluation PCB The circuit board used in the application should use RF circuit design techniques. Signal lines should have 5 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Analog Devices upon request. [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9, Norwood, MA 62-9 Phone: Order online at Application Support: Phone: 1-8-ANALOG-D

10 HMC585ALS6 v2.517 GaAs phemt MMIC.25 WATT POWER AMPLIFIER DC - 4 GHz Theory of Operation The HMC585ALS6 is a GaAs, phemt, MMIC power amplifier. Its basic architecture is that of a cascode distributed amplifier which allows for control of DC bias for a drain and two gates. The cascode distributed architecture uses a fundamental cell consisting of a stack of two field effect transistors (FETs) with the source of the upper FET connected to the drain of the lower FET. The fundamental cell is then duplicated several times, with a transmission line feeding the RFIN signal to the gates of the lower FETs and a separate transmission line interconnecting the drains of the upper FETs and routing the amplified signal to the RFOUT/VDD pin. Additional circuit design techniques are used around each cell to optimize the overall performance for broadband operation. The major benefit of this architecture is that high performance is maintained across a bandwidth far greater than what a single instance of the fundamental cell would provide. Additionally, ACG1-ACG4 provide access to internal nodes which, when provided with the recommended AC terminations to ground, ensure that the overall response remains flat across the widest possible frequency range. A simplified Schematic of Architecture is shown in below. Schematic of Architecture ACG2 ACG1 VGG2 T-Line RFOUT/VDD RFIN T-Line VGG1 ACG4 ACG3 For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9, Norwood, MA 62-9 Phone: Order online at Application Support: Phone: 1-8-ANALOG-D 1