Features. = +25 C, Vdd =+28V, Idd = 850 ma [1]

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1 v1.413 HMC87F POWER AMPLIFIER, 2 - GHz Typical Applications The HMC86F is ideal for Test Instrumentation General Communications Radar Functional Diagram Features High Psat: +38. dbm Power Gain at Psat: 6. db High Output IP3: +43. dbm Small Signal Gain: 11 db Supply Voltage: Vdd = 8 ma Ohm Matched Input/Output Electrical Specifications, T A = + C, Vdd =+28V, Idd = 8 ma [1] -Lead Flange Package General Description The HMC87F is an 8W Gallium Nitride (GaN) MMIC Power Amplifier which operates between 2 and GHz, and is provided in a -lead flange mount package. The amplifier typically provides 11 db of small signal gain, +39 dbm of saturated output power, and +43 dbm output IP3 at +28 dbm output power per tone. The amplifier draws 8 ma quiescent current from a +28V DC supply. The RF I/Os are matched to Ohms for ease of use. Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units Frequency Range GHz Gain db Gain Flatness ±.6 ±.6 ±.7 db Gain Variation Over Temperature db/ C Input Return Loss db Output Return Loss db Output Power for 3 db Compression (P3dB) dbm Power Gain for 3dB compression (P3dB) db Saturated Output Power (Psat) dbm Output Third Order Intercept (IP3) [2] dbm Power Added Efficiency 17 Total Supply Current ma [1] Adjust Vgg between -8 to V to achieve Idd = 8 ma typical. [2] Measurement taken at Pout / tone = +28 dbm. 1 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 1824 Phone: Fax: Order On-line at Application Support: Phone: or apps@hittite.com

2 v1.413 HMC87F POWER AMPLIFIER, 2 - GHz Gain & Return Loss Gain vs. Temperature Response (db) S21 S11 S22 Gain vs. Vdd Gain (db) Gain (db) C 8 C - C Input Return Loss vs. Temperature Return Loss (db) V 28V 32V C 8 C - C Output Return Loss vs. Temperature Pout vs. Frequency - Return Loss (db) Pout (dbm) - - C 8 C - C P3dB Psat For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 1824 Phone: Fax: Order On-line at Application Support: Phone: or apps@hittite.com 2

3 v1.413 HMC87F POWER AMPLIFIER, 2 - GHz P3dB vs. Temperature P3dB (dbm) Psat vs. Temperature Psat (dbm) + C +8 C - C P3dB vs Supply Voltage P3dB (dbm) Psat vs. Supply Voltage Psat (dbm) 24V 28V 32V + C +8 C - C 24V 28V 32V P3dB vs Supply Current Psat vs Supply Current P3dB (dbm) Psat (dbm) 4 ma 8 ma 4 ma 8 ma 3 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 1824 Phone: Fax: Order On-line at Application Support: Phone: or apps@hittite.com

4 v1.413 HMC87F POWER AMPLIFIER, 2 - GHz Power Gain vs. Frequency POWER GAIN (db) Output IP3 vs. Supply Voltage, Pout/tone = +28 dbm IP3 (dbm) P3dB 37 Psat Output IP3 vs. Temperature, Pout/tone = +28 dbm IP3 (dbm) C +8 C - C Output IP3 vs. Supply Current, Pout/tone = +28 dbm IP3 (dbm) V 28V 32V 4 ma 8 ma Output Vdd= +24V Output Vdd= +28V IM3 (dbc) IM3 (dbc) Pout/tone(dBm) Pout/TONE (dbm) 4 GHz 6 GHz 12 GHz 16 GHz 18 GHz 4 GHz 6 GHz 12 GHz 16 GHz 18 GHz For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 1824 Phone: Fax: Order On-line at Application Support: Phone: or apps@hittite.com 4

5 v1.413 HMC87F POWER AMPLIFIER, 2 - GHz Output Vdd= +32V IM3 (dbc) Power GHz Pout(dBm), GAIN(dB), PAE(%) GHz 6 GHz 12 GHz Pout/TONE (dbm) INPUT POWER (dbm) 16 GHz 18 GHz Pout Gain PAE Idd (ma) Power 3 GHz Pout(dBm), GAIN(dB), PAE(%) INPUT POWER (dbm) Pout Gain PAE Idd Power 19 GHz Pout(dBm), GAIN(dB), PAE(%) INPUT POWER (dbm) Pout Gain PAE Idd (ma) Idd (ma) Idd Idd Gain & Power vs. Supply GHz Gain (db), P3dB (dbm), Psat (dbm) Vdd (V) Gain & Power vs. Supply 18 GHz Gain (db), P3dB (dbm), Psat (dbm) Idd (ma) GAIN P3dB Psat GAIN P3dB Psat For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 1824 Phone: Fax: Order On-line at Application Support: Phone: or apps@hittite.com

6 v1.413 HMC87F POWER AMPLIFIER, 2 - GHz Reverse Isolation vs. Temperature Second Harmonics vs. Temperature [1] ISOLATION (db) C +8 C - C Second Harmonics vs. Supply Voltage [1] SECOND HARMONIC (dbc) FREQUENCY(GHz) 24V 28V 32V SECOND HARMONIC (dbc) FREQUENCY(GHz) + C +8 C - C Second Harmonics vs. Pin SECOND HARMONIC (dbc) FREQUENCY(GHz) +6 dbm +12 dbm +18 dbm +24 dbm + dbm Power Dissipation POWER DISSIPATION (W) INPUT POWER (dbm) 2 GHz 6 GHz 11 GHz 16 GHz GHz [1] Second Harmonic data Pin=12 dbm. For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 1824 Phone: Fax: Order On-line at Application Support: Phone: or apps@hittite.com 6

7 v1.413 HMC87F POWER AMPLIFIER, 2 - GHz Absolute Maximum Ratings Drain Bias Voltage (Vdd) Gate Bias Voltage (Vgg) RF Input Power (RFIN) +32 Vdc -8 to Vdc +33 dbm Channel Temperature 2 C Continuous Pdiss (T= 8 C) (derate 24 mw/ C above 8 C) Thermal Resistance [1] (channel to die bottom) Maximum Forward Gate Current (ma) Maximum VSWR [2] 6: W 2.2 C/W 11 ma Storage Temperature -6 to C Operating Temperature - to 8 C [1] Junction to case. [2] Restricted by maximum power dissipation. Typical Supply Current vs. Vdd Vdd (V) Idd (ma) Adjust Vgg to achieve Idd = 1 ma ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 7 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 1824 Phone: Fax: Order On-line at Application Support: Phone: or apps@hittite.com

8 v1.413 HMC87F POWER AMPLIFIER, 2 - GHz Outline Drawing Package Information Part Number Package Body Material Lead Finish Package Marking [1] HMC68F Copper Tungston 8 NiAu [1] 4-Digit lot number XXXX H87 XXXX For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 1824 Phone: Fax: Order On-line at Application Support: Phone: or apps@hittite.com 8

9 v1.413 HMC87F POWER AMPLIFIER, 2 - GHz Pin Descriptions Pin Number Function Description Interface Schematic 1 Vgg Gate control voltage. 2, 4,, 7, 9, NC Application Circuit These pins are not connected internally, however all data shown was measured with these pins connected to RF/ DC ground externally. 3 RFIN This pin is DC coupled and matched to Ohms. 6 Vdd Drain bias. 8 RFOUT This pad is RF coupled and matched to Ohms. 9 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 1824 Phone: Fax: Order On-line at Application Support: Phone: or apps@hittite.com

10 v1.413 HMC87F POWER AMPLIFIER, 2 - GHz Evaluation PCB [1] Evaluation Order Information Item Contents Part Number Evaluation PCB Only HMC87F Evaluation PCB Eval1-HMC87F [2] [2] Reference this number when ordering Evaluation PCB Only List of Materials for Evaluation PCB EVAL1-HMC87F Item Description J2, J3 SRI K Connector. J1 DC Pins. J4, J Preform jumpers. C1 - C6 C7 - C8 U1 PCB [1] 1 uf Capacitor, 62 Pkg. uf Capacitor, 12 Pkg. HMC87F Evaluation PCB. [2] Circuit Board Material: Rogers 4 or Arlon FR The circuit board used in the application should use RF circuit design techniques. Signal lines should have Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. [1] The universal evaluation board shown above is designed to support multible products, please refer to Application Circuit herein for required external components. For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 1824 Phone: Fax: Order On-line at Application Support: Phone: or apps@hittite.com