400 MHz to 4000 MHz ½ Watt RF Driver Amplifier ADL5324

Transcription

1 Data Sheet FEATURES Operation from MHz to MHz Gain of 14.6 db at 21 MHz OIP of 4.1 dbm at 21 MHz P1dB of 29.1 dbm at 21 MHz Noise figure of.8 db Dynamically adjustable bias Adjustable power supply bias:. V to V Low power supply current: 62 ma to 1 ma No bias resistor needed Operating temperature range of C to +1 C SOT-89 package, MSL-1 rated ESD rating of ± kv (Class 2) MHz to MHz ½ Watt RF Driver Amplifier FUNCTIONAL BLOCK DIAGRAM (2) BIAS 1 2 RFIN Figure 1. RFOUT APPLICATIONS Wireless infrastructure Automated test equipment ISM/AMR applications GENERAL DESCRIPTION The incorporates a dynamically adjustable biasing circuit that allows for the customization of OIP and P1dB performance from. V to V, without the need for an external bias resistor. This feature gives the designer the ability to tailor driver amplifier performance to the specific needs of the design. This feature also creates the opportunity for dynamic biasing of the driver amplifier where a variable supply is used to allow for full V biasing under large signal conditions, and then reduced supply voltage when signal levels are smaller and lower power consumption is desirable. This scalability reduces the need to evaluate and inventory multiple driver amplifiers for different output power requirements, from 2 dbm to 29 dbm output power levels. The is also rated to operate across the wide temperature range of C to +1 C for reliable performance in designs that experience higher temperatures, such as power amplifiers. The ½ W driver amplifier also covers the wide frequency range of MHz to MHz, and only requires a few external components to be tuned to a specific band within that wide range. This high performance broadband RF driver amplifier is well suited for a variety of wired and wireless applications, including cellular infrastructure, ISM band power amplifiers, defense equipment, and instrumentation equipment. A fully populated evaluation board is available. The also delivers excellent ACPR vs. output power and bias voltage. The driver can deliver greater than 17 dbm of output power at 21 MHz, while achieving an ACPR of dbc at V. If the bias is reduced to. V, the dbc ACPR output power only minimally reduces to 1 dbm. MHz CARRIER OFFSET (dbc) SOURCE V CC =.V V CC = V P OUT (dbm) Figure 2. ACPR vs. Output Power, Single Carrier W-CDMA, TM1-64 at 21 MHz 162 Rev. B Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. One Technology Way, P.O. Box 916, Norwood, MA , U.S.A. Tel: Fax: Analog Devices, Inc. All rights reserved.

2 TABLE OF CONTENTS Features... 1 Applications... 1 Functional Block Diagram... 1 General Description... 1 Revision History... 2 Specifications... Typical Scattering Parameters... Absolute Maximum Ratings... 6 Thermal Resistance... 6 ESD Caution... 6 Pin Configuration and Function Descriptions... 7 Data Sheet Typical Performance Characteristics...8 High Temperature Operation Applications Information... 1 Basic Layout Connections... 1 Soldering Information and Recommended PCB Land Pattern. 1 Matching Procedure... 1 W-CDMA ACPR Performance Evaluation Board Outline Dimensions... 2 Ordering Guide... 2 REVISION HISTORY 9/12 Rev. A to Rev. B Changes to Figure Changed Figure Tex t Reference to Figure Text Reference Changed Table 7 Text Reference to Table Changed Table 9 Text Reference to Table 1 and Table 1 Text Reference to Table Changes to Figure /12 Rev. to Rev. A Change V Supply Current from 1 ma to 1 ma and V Power Dissipation from 7 mw to 66 mw, Table Changes to Supply Current from 1 ma to 1 ma... 1 /12 Revision : Initial Version Rev. B Page 2 of 2

3 Data Sheet SPECIFICATIONS VSUP = V and T A = 2 C, unless otherwise noted. Table 1.. V V Parameter Test Conditions/Comments Min Typ Max Min Typ Max Unit FREQUENCY = 47 MHz Gain db vs. Frequency ±7 MHz +./.4 +./.2 db vs. Temperature C T A +8 C ±.6 ±.6 db vs. Supply.1 V to.4 V, 4.7 V to.2 V ±. ±.7 db Output 1 db Compression Point dbm Output Third-Order Intercept f = 1 MHz, P OUT = 1 dbm per tone.1.1 dbm Noise Figure db FREQUENCY = 748 MHz Gain db vs. Frequency ±2 MHz +./.2 +./.2 db vs. Temperature C T A +8 C ±.4 ±.4 db vs. Supply.1 V to.4 V, 4.7 V to.2 V ±.2 ±.6 db Output 1 db Compression Point dbm Output Third-Order Intercept f = 1 MHz, P OUT = 1 dbm per tone dbm Noise Figure 4..2 db FREQUENCY = 91 MHz Gain db vs. Frequency ±46 MHz ±.1 +.1/. db vs. Temperature C T A +8 C ±.4 ±.4 db vs. Supply.1 V to.4 V, 4.7 V to.2 V ±.2 ±.6 db Output 1 db Compression Point dbm Output Third-Order Intercept f = 1 MHz, P OUT = 1 dbm per tone dbm Noise Figure db FREQUENCY = 19 MHz Gain db vs. Frequency ± MHz +./.1 +./.1 db vs. Temperature C T A +8 C ±. ±. db vs. Supply.1 V to.4 V, 4.7 V to.2 V ±.2 ±.7 db Output 1 db Compression Point dbm Output Third-Order Intercept f = 1 MHz, P OUT = 1 dbm per tone dbm Noise Figure.1.6 db FREQUENCY = 21 MHz Gain db vs. Frequency ± MHz +.1/. ±.1 db vs. Temperature C T A +8 C ±.6 ±.6 db vs. Supply.1 V to.4 V, 4.7 V to.2 V ±.2 ±.6 db Output 1 db Compression Point dbm Output Third-Order Intercept f = 1 MHz, P OUT = 1 dbm per tone dbm Noise Figure.2.8 db Rev. B Page of 2

4 Data Sheet. V V Parameter Test Conditions/Comments Min Typ Max Min Typ Max Unit FREQUENCY = 26 MHz Gain db vs. Frequency ±6 MHz ±.1 +./.2 db vs. Temperature C T A +8 C ±.7 ±.7 db vs. Supply.1 V to.4 V, 4.7 V to.2 V ±.2 ±.7 db Output 1 db Compression Point dbm Output Third-Order Intercept f = 1 MHz, P OUT = 1 dbm per tone dbm Noise Figure.6 4. db FREQUENCY = 6 MHz Gain db vs. Frequency ±1 MHz +./.7 +./.8 db vs. Temperature C T A +8 C ±1. ±1. db vs. Supply.1 V to.4 V, 4.7 V to.2 V ±.2 ±. db Output 1 db Compression Point dbm Output Third-Order Intercept f = 1 MHz, P OUT = 1 dbm per tone dbm Noise Figure db POWER INTERFACE Pin RFOUT Supply Voltage V Supply Current 62 1 ma vs. Temperature C T A +8 C +4/ 6 +/ 7 ma Power Dissipation VSUP = V 2 66 mw 1 Guaranteed maximum and minimum specified limits on this parameter are based on six sigma calculations. Rev. B Page 4 of 2

5 Data Sheet TYPICAL SCATTERING PARAMETERS VSUP = V and T A = 2 C; the effects of the test fixture have been de-embedded up to the pins of the device. Table 2. S11 S21 S12 S22 Freq (MHz) Magnitude (db) Angle ( ) Magnitude (db) Angle ( ) Magnitude (db) Angle ( ) Magnitude (db) Angle ( ) Rev. B Page of 2

6 ABSOLUTE MAXIMUM RATINGS Table. Parameter Rating Supply Voltage, VSUP 6. V Input Power ( Ω Impedance) 2 dbm Internal Power Dissipation (Paddle Soldered) 1.9 W Maximum Junction Temperature 1 C Operating Temperature Range C to +1 C Storage Temperature Range 6 C to +1 C Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Data Sheet THERMAL RESISTANCE Table 4 lists the junction-to-air thermal resistance (θ JA ) and the junction-to-paddle thermal resistance (θ JC ) for the. Table 4. Thermal Resistance Package Type 1 θ JA 2 θ JC Unit -Lead SOT C/W 1 Measured on Analog Devices evaluation board. For more information about board layout, see the Soldering Information and Recommended PCB Land Pattern section. 2 Based on simulation with JEDEC standard JESD1. ESD CAUTION Rev. B Page 6 of 2

7 Data Sheet PIN CONFIGURATION AND FUNCTION DESCRIPTIONS RFIN 1 2 TOP VIEW (Not to Scale) (2) RFOUT Figure. Pin Configuration Table. Pin Function Descriptions Pin No. Mnemonic Description 1 RFIN RF Input. This pin requires a dc blocking capacitor. 2 Ground. Connect this pin to a low impedance ground plane. Note that the paddle, which is exposed, encompasses Pin 2 and the tab at the top side of the package. It should be soldered to a low impedance ground plane for electrical grounding and thermal transfer. RFOUT RF Output and Supply Voltage. DC bias is provided to this pin through an inductor that is connected to the external power supply. The RF path requires a dc blocking capacitor. Rev. B Page 7 of 2

8 Data Sheet TYPICAL PERFORMANCE CHARACTERISTICS NOISE FIGURE, GAIN, P1DB, OIP (db, dbm) OIP (dbm) P1dB (dbm) GAIN (db) NF (db) P1dB (dbm) C +2 C +2 C +8 C OIP (dbm) Figure 4. Gain, P1dB, OIP, and Noise Figure vs. Frequency, 869 MHz to 961 MHz Figure 7. OIP and P1dB vs. Frequency and Temperature, 869 MHz to 961 MHz C 1 49 GAIN (db) C OIP (dbm) MHz 7 91MHz 961MHz P OUT PER TONE (dbm) Figure. Gain vs. Frequency and Temperature, 869 MHz to 961 MHz Figure 8. OIP vs. P OUT and Frequency, 869 MHz to 961 MHz 7 1 S C S-PARAMETERS (db) S11 S12 NOISE FIGURE (db) 4 +2 C Figure 6. Input Return Loss (S11), Output Return Loss (S22), and Reverse Isolation (S12) vs. Frequency, 869 MHz to 961 MHz Figure 9. Noise Figure vs. Frequency and Temperature, 869 MHz to 961 MHz Rev. B Page 8 of 2

9 Data Sheet 48 NOISE FIGURE, GAIN, P1dB, OIP (db, dbm) 4 OIP (dbm) P1dB (dbm) 2 2 GAIN (db) 1 1 NF (db) P1dB (dbm) C +8 C +2 C +8 C OIP (dbm) Figure 1. Gain, P1dB, OIP, and Noise Figure vs. Frequency, 211 MHz to 217 MHz Figure 1. OIP and P1dB vs. Frequency and Temperature, 211 MHz to 217 MHz MHz 21MHz 217MHz GAIN (db) C +8 C OIP (dbm) Figure 11. Gain vs. Frequency and Temperature, 211 MHz to 217 MHz P OUT PER TONE (dbm) Figure 14. OIP vs. P OUT and Frequency, 211 MHz to 217 MHz S-PARAMETERS (db) S22 S11 S12 NOISE FIGURE (db) 4 +8 C +2 C Figure 12. Input Return Loss (S11), Output Return Loss (S22), and Reverse Isolation (S12) vs. Frequency, 211 MHz to 217 MHz Figure 1. Noise Figure vs. Frequency and Temperature, 211 MHz to 217 MHz Rev. B Page 9 of 2

10 Data Sheet 4 48 NOISE FIGURE, GAIN, P1dB, OIP (db, dbm) OIP (dbm) P1dB (dbm) GAIN (db) NF (db) P1dB (dbm) C +8 C +2 C +8 C OIP (dbm) Figure 16. Gain, P1dB, OIP, and Noise Figure vs. Frequency, 27 MHz to 269 MHz Figure 19. OIP and P1dB vs. Frequency and Temperature, 27 MHz to 269 MHz MHz 26MHz 269MHz GAIN (db) C +8 C OIP (dbm) Figure 17. Gain vs. Frequency and Temperature, 27 MHz to 269 MHz P OUT PER TONE (dbm) Figure 2. OIP vs. P OUT and Frequency, 27 MHz to 269 MHz S22 6 S-PARAMETERS (db) S11 S12 NOISE FIGURE (db) +8 C +2 C Figure 18. Input Return Loss (S11), Output Return Loss (S22), and Reverse Isolation (S12) vs. Frequency, 27 MHz to 269 MHz Figure 21. Noise Figure vs. Frequency and Temperature, 27 MHz to 269 MHz Rev. B Page 1 of 2

11 Data Sheet PERCENTAGE (%) PERCENTAGE (%) OIP (dbm) NOISE FIGURE (db) Figure 22. OIP Distribution at 21 MHz Figure 2. Noise Figure Distribution at 21 MHz PERCENTAGE (%) SUPPLY CURRENT (ma) V V 4.7V P1dB (dbm) TEMPERATURE ( C) Figure 2. P1dB Distribution at 21 MHz Figure 26. Supply Current vs. Supply Voltage and Temperature, V (Using 21 MHz Matching Components) PERCENTAGE (%) SUPPLY CURRENT (ma) 7 6.4V.V.1V GAIN (db) TEMPERATURE ( C) Figure 24. Gain Distribution at 21 MHz Figure 27. Supply Current vs. Supply Voltage and Temperature,. V (Using 21 MHz Matching Components) Rev. B Page 11 of 2

12 Data Sheet HIGH TEMPERATURE OPERATION The has excellent performance at temperatures above 8 C. At 1 C, the gain and P1dB decrease by.2 db, the OIP decreases by.1 db, and the noise figure increases by.1 db compared with the data at 8 C. Figure 28 through Figure show the performance at 1 C C 8 C 1 C GAIN (db) 1. 2 C 8 C 1 C GAIN (db) Figure 28. Gain vs. Frequency and Temperature, V Supply, 21 MHz Figure 1. Gain vs. Frequency and Temperature,. V Supply, 21 MHz OIP C 8 C 1 C 4 P1dB (dbm) C 8 C 1 C P1dB 8 OIP (dbm) P1dB (dbm) OIP 8 OIP (dbm) P1dB Figure 29. OIP and P1dB vs. Frequency and Temperature, V Supply, 21 MHz Figure 2. OIP and P1dB vs. Frequency and Temperature,. V Supply, 21 MHz C 8 C 1 C 2 C 8 C 1 C NOISE FIGURE (db) 4 NOISE FIGURE (db) Figure. Noise Figure vs. Frequency and Temperature, V Supply, 21 MHz Figure. Noise Figure vs. Frequency and Temperature,. V Supply, 21 MHz Rev. B Page 12 of 2

13 Data Sheet APPLICATIONS INFORMATION BASIC LAYOUT CONNECTIONS The basic connections for operating the are shown in Figure 4. Table 6 lists the required matching components. Capacitors C1, C2, and C are Murata GRM61 series (2 size) High Q capacitors and C7 is a Murata GRM1 series (2 size). Inductor L1 is a Coilcraft 6CS series (6 size). For all frequency bands, the placement of C1 and C2 are critical. The placement of C becomes critical for the following bands: 188 MHz to 199 MHz, 211 MHz to 217 MHz, 2 MHz to 2 MHz, 27 MHz to 269 MHz. and MHz to 6 MHz. For operation from 42 MHz to 494 MHz, 728 MHz to 768 MHz, and 869 MHz to 96 MHz, R2 is replaced with a Coilcraft (2 size) High Q inductor. Table 7 lists the recommended component placement for various frequencies. A V dc bias is supplied through L1, which is connected to RFOUT (Pin ). In addition to C4, 1 nf and 1 µf power supply decoupling capacitors are also required. The typical current consumption for the is 1 ma. VSUP SOLDERING INFORMATION AND RECOMMENDED PCB LAND PATTERN Figure shows the recommended land pattern for the. To minimize thermal impedance, the exposed paddle on the SOT-89 package underside is soldered to a ground plane along with Pin 2. If multiple ground layers exist, they should be stitched together using vias. For more information on land pattern design and layout, refer to the Application Note AN-772, A Design and Manufacturing Guide for the Lead Frame Chip Scale Package (LFCSP). This land pattern, on the evaluation board, provides a measured thermal resistance (θ JA ) of 7 C/W. To measure θ JA, the temperature at the top of the SOT-89 package is found with an IR temperature gun. Thermal simulation suggests a junction temperature 1 C higher than the top of package temperature. With additional ambient temperature and I/O power measurements, θ JA could be determined. 1.8mm C6 1µF (2) C 1nF C4 1pF.48mm RFIN C1 2pF RFIN L1 1nH R1 C 2.4pF λ λ2 2 RFOUT R2 C2 2.2pF C7 2pF RFOUT.2mm.6mm.86mm.62mm 1SEE THE RECOMMENDED COMPONENTS FOR BASIC CONNECTIONS TABLE FOR FREQUENCY-SPECIFIC COMPONENTS. 2SEE TABLE 6 FOR RECOMMENDED COMPONENT SPACING. C1, C2, AND C ARE MURATA HIGH Q CAPACITORS GRM61 SERIES. Figure 4. Basic Connections mm.mm Figure. Recommended Land Pattern 1.27mm Rev. B Page 1 of 2

14 Data Sheet Table 6. Recommended Components for Basic Connections Function/ Component 42 MHz to 494 MHz 728 MHz to 768 MHz 8 MHz to 96 MHz 188 MHz to 199 MHz 211 MHz to 217 MHz (Default) 2 MHz to 2 MHz 26 MHz to 269 MHz MHz to 7 MHz AC Coupling Capacitors C = 2 1 pf 1pF 1 1 pf pf pf pf 1 2pF 1 1pF 1 C7 = 2 2 pf 2 pf 2 pf 2 pf 2 pf 2 pf 2 pf 1 2 pf Power Supply Bypassing Capacitors C4 = 2 1 pf 1 pf 1 pf 1 pf 1 pf 1 pf 1 pf 1 pf C = 6 1 nf 1 nf 1 nf 1 nf 1 nf 1 nf 1 nf 1 nf C6 = µf 1 µf 1 µf 1 µf 1 µf 1 µf 1 µf 1 µf DC Bias Inductor 12 nh 18 nh 18 nh 1 nh 1 nh 1 nh 1 nh 1 nh L1 = 6CS Tuning Capacitors C1 = 2 2 pf 1 8 pf 1 8 pf pf 1 2. pf 1 1. pf 1 1. pf 1. pf 1 C2 = pf 1.9 pf 1.6 pf pf pf 1 2. pf 1 2. pf 1.7 pf 1 Jumpers R1 = 2 2 Ω 2 Ω 2 Ω Ω Ω Ω Ω Ω R2 = 2.6 nh nh 2.4 nh Ω Ω Ω Ω 4.7 nh Power Supply Connections VSUP Red test loop Black test loop 1 Murata High Q capacitor. 2 Add a 1.6 nh at input (see Figure 41). Coilcraft 2CS series. Table 7. Matching Component Spacing Frequency (MHz) λ1 (mils) λ2 (mils) 42 to to to to to to to to Rev. B Page 14 of 2

15 Data Sheet MATCHING PROCEDURE The is designed to achieve excellent gain and OIP performance. To achieve this, both input and output matching networks must present specific impedance to the device. The matching components listed in Table 6 were chosen to provide 1 db input return loss while maximizing OIP. The load-pull plots (see Figure 6 and Figure 7) show the load impedance points on the Smith chart where optimum OIP, gain, and output power can be achieved. These load impedance values (that is, the impedance that the device sees when looking into the output matching network) are listed in Table 8 and Table 9 for maximum gain and maximum OIP, respectively. The contours show how each parameter degrades as it is moved away from the optimum point. From the data shown in Table 8 and Table 9, it becomes clear that maximum gain and maximum OIP do not occur at the same impedance. This can also be seen on the load-pull contours in Figure 6 and Figure 7. Thus, output matching generally involves compromising between gain and OIP. In addition, the loadpull plots demonstrate that the quality of the output impedance match must be compromised to optimize gain and/or OIP. In most applications where line lengths are short and where the next device in the signal chain presents a low input return loss, compromising on the output match is acceptable. To adjust the output match for operation at a different frequency, or if a different trade-off between OIP, gain, and output impedance is desired, a four-step procedure is recommended. For example, to optimize the for optimum OIP and gain at 7 MHz, use the following steps: 1. Install the recommended tuning components for an 869 MHz to 97 MHz tuning band, but do not install C1 and C2. 2. Connect the evaluation board to a vector network analyzer so that input and output return loss can be viewed simultaneously.. Starting with the recommended values and positions for C1 and C2, adjust the positions of these capacitors along the transmission line until the return loss and gain are acceptable. In this case, push-down capacitors mounted on small sticks can be used as an alternative to soldering. If moving the component positions does not yield satisfactory results, then increase or decrease the values of C1 and C2 (in this case, the values are most likely increased because the user is tuning for a lower frequency. 4. Repeat Step as necessary. Once the desired gain and return loss are realized, measure OIP. Most likely, it will be necessary to go back and forth between return loss/gain and OIP measurements (probably compromising most on output return loss) until an acceptable compromise is achieved. Fixed Load Pull Freq = 2.1 GHz ZSource_2nd (Ohms) :. + j. ZSource_rd (Ohms) :. + j. Gt max = 16.6 db at 2.97 j 2.7 Ohms 1 contours,. db step (11. to 16. db) Ip max = dbm at j 9.6 Ohms 1 contours, 1. dbm step (. to 44. dbm) Specs: OFF Fixed Load Pull Freq = 2.6 GHz ZSource (Ohms) : j 4. ZSource_2nd (Ohms) : j.28 ZSource_rd (Ohms) : j1. Gt max = 1.8 db at 4.27 j 1.99 Ohms 1 contours,. db step (9. to 1. db) Ip max = 4.19 dbm at j.89 Ohms 1 contours, 1. dbm step (6. to 4. dbm) Specs: OFF Load Figure 6. Load-Pull Contours, 21 MHz Load j.9 Figure 7. Load-Pull Contours, 26 MHz Label: _2P14_LP7 Label: _2p6ghZ_LP Table 8. Load Conditions for Gain MAX ΓLoad Frequency (MHz) (Magnitude) ΓLoad ( ) Gain MAX (db) Table 9. Load Conditions for OIP MAX ΓLoad Frequency (MHz) (Magnitude) ΓLoad ( ) IP MAX (dbm) Rev. B Page 1 of 2

16 W-CDMA ACPR PERFORMANCE Figure 8 shows a plot of adjacent channel power ratio (ACPR) vs. P OUT for the. The signal type used is a single W-CDMA carrier (Test Model 1-64) at 21 MHz. This signal is generated by a very low ACPR source. ACPR is measured at the output by a high dynamic range spectrum analyzer, which incorporates an instrument noise correction function. The achieves an ACPR of 79 dbc at dbm output, at which point device noise and not distortion is beginning to dominate the power in the adjacent channels. At an output power of 1 dbm, ACPR is still very low at 72 dbc, making the device particularly suitable for PA driver applications. MHz CARRIER OFFSET (dbc) SOURCE V CC =.V V CC = V Data Sheet P OUT (dbm) Figure 8. ACPR vs. Output Power, Single Carrier W-CDMA, TM1-64, at 21 MHz Rev. B Page 16 of 2

17 Data Sheet EVALUATION BOARD The schematic of the evaluation board is shown in Figure 9. This evaluation board uses 2 mil wide traces and is made from FR4 material. The evaluation board comes tuned for operation in the 211 MHz to 217 MHz tuning band. Tuning options for other frequency bands are also provided in Table 1. The recommended placement for these components is provided in Table 11. The inputs and outputs should be ac-coupled with appropriately sized capacitors. dc bias is provided to the amplifier via an inductor connected to the RFOUT pin. A bias voltage of V is recommended. VSUP R1 C 2.4pF 6mils C1 2pF 19mils L1 1nH 1pF R2 C2 2.2pF C7 2pF C6 1µF R1 C 1 RFIN 2.4pF RFIN C 1nF (2) C4 1pF L1 1nH λ λ2 4 C1 2 2pF RFOUT R2 C2 2.2pF C7 2pF RFOUT Figure. Evaluation Board Layout and Default Component Placement for 211 MHz to 217 MHz MURATA HIGH Q CAPACITOR GRM61COG2R4B OR EQUIVALENT. 2 MURATA HIGH Q CAPACITOR GRM61COG2B OR EQUIVALENT. MURATA HIGH Q CAPACITOR GRM61COG2R2B OR EQUIVALENT. 4SEE TABLE 1 FOR RECOMMENDED COMPONENT SPACING. Figure 9. Evaluation Board, 211 MHz to 217 MHz Table 1. Recommended Components for Basic Connections Function/ Component 42 MHz to 494 MHz 728 MHz to 768 MHz 8 MHz to 96 MHz MHz to 199 MHz 211 MHz to 217 MHz (Default) 2 MHz to 2 MHz 26 MHz to 269 MHz MHz to 7 MHz AC Coupling Capacitors C = 2 1 pf 1pF 1 1 pf 2.4 pf pf pf 1 2pF 1 1pF 1 C7 = 2 2 pf 2 pf 2 pf 2 pf 2 pf 2 pf 2 pf 1 2 pf Power Supply Bypassing Capacitors C4 = 2 1 pf 1 pf 1 pf 1 pf 1 pf 1 pf 1 pf 1 pf C = 6 1 nf 1 nf 1 nf 1 nf 1 nf 1 nf 1 nf 1 nf C6 = µf 1 µf 1 µf 1 µf 1 µf 1 µf 1 µf 1 µf DC Bias Inductor 12 nh 18 nh 18 nh 1 nh 1 nh 1 nh 1 nh 1 nh L1 = 6CS Tuning Capacitors C1 = 2 2 pf 1 8 pf 1 8 pf pf 1 2. pf 1 1. pf 1 1. pf 1. pf 1 C2 = pf 1.9 pf 1.6 pf pf pf 1 2. pf 1 2. pf 1.7 pf 1 Jumpers R1 = 2 2 Ω 2 Ω 2 Ω Ω Ω Ω Ω Ω R2 = 2.6 nh nh 2.4 nh Ω Ω Ω Ω 4.7 nh Power Supply Connections VSUP Red test loop Black test loop 1 Murata High Q capacitor. 2 Add a 1.6 nh at input (see Figure 41). Coilcraft 2CS series. Rev. B Page 17 of 2

18 Data Sheet Table 11. Recommended Component Spacing on Evaluation Board Frequency (MHz) λ1 (mils) λ2 (mils) 42 to to to to to to to to C 1pF C1 2pF L 1.6nH R1 2Ω 248 mils 419 mils L1 12nH 11 mils 48 mils 1 pf L2.6nH C7 2pF C2 6.2pF C 1pF C1 8pF R1 2Ω 27mils L1 18nH 41mils 1pF L2 2.4nH C7 2pF C2.6pF Figure 41. Evaluation Board Layout and Component Placement, 42 MHz to 494 MHz Operation C 1pF C1 8pF R1 2Ω 11 mils L1 18nH 422 mils 1pF L2 2.4nH C7 2pF C2.9pF Figure 4. Evaluation Board Layout and Component Placement, 869 MHz to 961 MHz Operation R1 C 2.4pF 7mils C1 2.4pF 29mils L1 1nH 1pF R2 C2 2.4pF C7 2pF Figure 42. Evaluation Board Layout and Component Placement, 728 MHz to 768 MHz Operation Figure 44. Evaluation Board Layout and Component Placement, 188 MHz to 199 MHz Operation Rev. B Page 18 of 2

19 Data Sheet R1 C 2.4pF 71mils C1 1.pF 176mils L1 1nH C2 2.pF 1pF R2 C7 2pF R1 C1.pF C 1.pF 16 mils 12 mils 1pF L1 L2 1nH 4.7nH C2.7pF C7 2pF Figure 4. Evaluation Board Layout and Component Placement, 2 MHz to 2 MHz Operation Figure 47. Evaluation Board Layout and Component Placement, MHz to 7 MHz Operation C 2.pF 1pF L1 C7 1nH 2pF R1 C1 1.pF 24mils 12mils C2 2.pF R2 Figure 46. Evaluation Board Layout and Component Placement, 26 MHz to 269 MHz Operation Rev. B Page 19 of 2

20 Data Sheet OUTLINE DIMENSIONS * (2) TYP TYP *.6.6 *.2.2 END VIEW *COMPLIANT TO JEDEC STANDARDS TO-24 WITH THE EXCEPTION OF DIMENSIONS INDICATED BY AN ASTERISK. Figure 48. -Lead Small Outline Transistor Package [SOT-89] (RK-) Dimensions shown in millimeters B ORDERING GUIDE Model 1 Temperature Range Package Description Package Option ARKZ-R7 C to +1 C -Lead SOT-89, 7 Tape and Reel RK- -EVALZ Evaluation Board 1 Z = RoHS Compliant Part. 212 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. D162--9/12(B) Rev. B Page 2 of 2