20 MHz to 6 GHz RF/IF Gain Block ADL5542
|
|
|
- Henry Sparks
- 5 years ago
- Views:
Transcription
1 FEATURES Fixed gain of db Operation up to 6 GHz Input/output internally matched to Ω Integrated bias control circuit Output IP3 46 dbm at MHz 4 dbm at 9 MHz Output 1 db compression:.6 db at 9 MHz Noise figure of 3 db at 9 MHz Single V power supply Small footprint 8-lead LFCSP Pin compatible with 1 db gain ADL41 1 kv ESD (Class 1C) MHz to 6 GHz RF/IF Gain Block FUNCTIONAL BLOCK DIAGRAM RFIN CB INPUT MATCH BIAS CONTROL Figure 1. OUTPUT MATCH RFOUT VPOS GENERAL DESCRIPTION The is a broadband db linear amplifier that operates at frequencies up to 6 GHz. The device can be used in a wide variety of CATV, cellular, and instrumentation equipment. The provides a gain of db that is stable over frequency, temperature, power supply, and from device to device. The device is internally matched to Ω with an input return loss of 1 db or better, up to 6 GHz. Only input/output ac coupling capacitors, power supply decoupling capacitors, and an external inductor are required for operation. The is fabricated on an InGaP HBT process and has an ESD rating of 1 kv (Class 1C). The device is packaged in a 3 mm 3 mm LFCSP that uses an exposed paddle for excellent thermal impedance. The consumes 93 ma on a single V supply and is fully specified for operation from 4 C to +8 C. A fully populated RoHS-compliant evaluation board is available. The ADL41 is a companion part that offers a gain of 1 db in a pin-compatible package. Rev. C Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. One Technology Way, P.O. Box 916, Norwood, MA , U.S.A. Tel: Analog Devices, Inc. All rights reserved. Technical Support
2 TABLE OF CONTENTS Features... 1 Functional Block Diagram... 1 General Description... 1 Revision History... 2 Specifications... 3 Typical Scattering Parameters... Absolute Maximum Ratings... 6 ESD Caution... 6 Pin Configuration and Function Descriptions... 7 Data Sheet Typical Performance Characteristics...8 Operating to MHz... 1 Basic Connections Soldering Information and Recommended PCB Land Pattern Evaluation Board Outline Dimensions Ordering Guide REVISION HISTORY 2/1 Rev. B to Rev. C Changed Frequency Range from MHz to 6 MHz to MHz to 6 MHz (Throughout)... 1 Changes to Table Added Figure 14 to Figure 19; Renumbered Sequentially... 1 Changes to Basic Connections Section and Table ; Added Figure 21 and Figure Updated Outline Dimensions Changes to Ordering Guide /13 Rev. A to Rev. B Added Figure 13; Renumbered Sequentially /7 Rev. to Rev. A Changes to Figure Change to Basic Connections Section... 1 Changes to Table... 1 Change to Table Deleted Notes from Ordering Guide Section /7 Revision : Initial Version Rev. C Page 2 of 13
3 SPECIFICATIONS VPOS = V and TA = 2 C, unless otherwise noted. Table 1. Parameter Test Conditions/Comments Min Typ Max Unit OVERALL FUNCTION Frequency Range 6 MHz Gain (S21) 9 MHz 19.7 db Input Return Loss (S11) Frequency MHz to GHz 1 db Output Return Loss (S22) Frequency MHz to GHz 1 db Reverse Isolation (S12) 22 db FREQUENCY = MHz Gain.9 db Output 1 db Compression Point 17. dbm Output Third-Order Intercept Δf = 1 MHz, output power (POUT) = dbm per tone 38 dbm Noise Figure 2.9 db FREQUENCY = 1 MHz Gain.2 db Output 1 db Compression Point 19.6 dbm Output Third-Order Intercept Δf = 1 MHz, output power (POUT) = dbm per tone 37 dbm Noise Figure 3. db FREQUENCY = MHz Gain db vs. Frequency ± MHz ±.1 db vs. Temperature 4 C TA +8 C ±.1 db vs. Supply 4.7 V to.2 V ±.2 db Output 1 db Compression Point.6 dbm Output Third-Order Intercept Δf = 1 MHz, output power (POUT) = 3 dbm per tone 46 dbm Noise Figure db FREQUENCY = 9 MHz Gain db vs. Frequency ± MHz ±.3 db vs. Temperature 4 C TA +8 C ±.14 db vs. Supply 4.7 V to.2 V ±.2 db Output 1 db Compression Point.6 dbm Output Third-Order Intercept Δf = 1 MHz, output power (POUT) = dbm per tone 4 dbm Noise Figure db FREQUENCY = MHz Gain db vs. Frequency ± MHz ±. db vs. Temperature 4 C TA +8 C ±.23 db vs. Supply 4.7 V to.2 V ±.4 db Output 1 db Compression Point 18 dbm Output Third-Order Intercept Δf = 1 MHz, output power (POUT) = dbm per tone 39 dbm Noise Figure db FREQUENCY = 24 MHz Gain db vs. Frequency ± MHz ±. db vs. Temperature 4 C TA +8 C ±.24 db vs. Supply 4.7 V to.2 V ±.4 db Output 1 db Compression Point 16.8 dbm Output Third-Order Intercept Δf = 1 MHz, output power (POUT) = dbm per tone 38 dbm Noise Figure db Rev. C Page 3 of 13
4 Data Sheet Parameter Test Conditions/Comments Min Typ Max Unit FREQUENCY = 3 MHz Gain db vs. Frequency ± MHz ±.4 db vs. Temperature 4 C TA +8 C ±.31 db vs. Supply 4.7 V to.2 V ±.4 db Output 1 db Compression Point 13.7 dbm Output Third-Order Intercept Δf = 1 MHz, output power (POUT) = dbm per tone 33 dbm Noise Figure db FREQUENCY = 8 MHz Gain db vs. Frequency ± MHz ±.3 db vs. Temperature 4 C TA +8 C ±1.2 db vs. Supply 4.7 V to.2 V ±.4 db Output 1 db Compression Point 6.8 dbm Output Third-Order Intercept Δf = 1 MHz, output power (POUT) = dbm per tone 24.2 dbm Noise Figure db POWER INTERFACE Pin VPOS Supply Voltage (VPOS) 4.. V Supply Current ma vs. Temperature 4 C TA +8 C ±1 ma Power Dissipation VPOS = V. W Rev. C Page 4 of 13
5 TYPICAL SCATTERING PARAMETERS VPOS = V and TA = 2 C, the effects of the test fixture have been de-embedded up to the pins of the device. Table 2. Freq. (MHz) Magnitude (db) Angle ( ) Magnitude (db) Angle ( ) Magnitude (db) Angle ( ) Magnitude (db) Angle ( ) Rev. C Page of 13
6 Data Sheet ABSOLUTE MAXIMUM RATINGS Table 3. Parameter Rating Supply Voltage, VPOS 6. V Input Power (re: Ω) 1 dbm Internal Power Dissipation (Paddle Soldered) 6 mw θjc (Junction to Paddle) 28. C/W Maximum Junction Temperature 1 C Operating Temperature Range 4 C to +8 C Storage Temperature Range 6 C to +1 C Stresses at or above those listed under Absolute Maximum Ratings may cause permanent damage to the product. This is a stress rating only; functional operation of the product at these or any other conditions above those indicated in the operational section of this specification is not implied. Operation beyond the maximum operating conditions for extended periods may affect product reliability. ESD CAUTION Rev. C Page 6 of 13
7 PIN CONFIGURATION AND FUNCTION DESCRIPTIONS RFIN 1 8 RFOUT CB TOP VIEW (Not to Scale) 7 6 VPOS NOTES 1. EXPOSED PADDLE. INTERNALLY CONNECTED TO. SOLDER TO A LOW IMPEDANCE GROUND PLANE. Figure 2. Pin Configuration Table 4. Pin Function Descriptions Pin No. Mnemonic Description 1 RFIN RF Input. Requires a dc blocking capacitor. 2, 3, 6, 7 Ground. Connect these pins to a low impedance ground plane. 4 CB Low Frequency Bypass. A 1 µf capacitor should be connected between this pin and ground. VPOS Power Supply for Bias Controller. Connect directly to external power supply. 8 RFOUT RF Output and Supply Voltage. DC bias is provided to this pin through an inductor that is tied to the external power supply. RF path requires a dc blocking capacitor. Exposed Paddle Exposed Paddle. Internally connected to. Solder to a low impedance ground plane. Rev. C Page 7 of 13
8 Data Sheet TYPICAL PERFORMANCE CHARACTERISTICS VPOS = V and TA = 2 C, unless otherwise noted. C1 = 33 pf, C2 = 33 pf, L1 = 47 nh GAIN, P1dB, OIP3, NF (db, dbm) OIP3 (dbm) GAIN 1 P1dB 1 NF OIP3 AND P1dB (dbm) OIP3 (+8 C) OIP3 (+2 C) P1dB (+2 C) OIP3 ( 4 C) P1dB (+8 C) P1dB ( 4 C) FREQUENCY (GHz) Figure 3. Gain, P1dB, OIP3, and Noise Figure vs. Frequency FREQUENCY (GHz) Figure 6. OIP3 and P1dB vs. Frequency and Temperature GAIN (db) C 4 C +2 C OIP3 (dbm) GHz 9MHz 3.GHz MHz 2GHz FREQUENCY (GHz) P OUT (dbm) Figure 4. Gain vs. Frequency and Temperature Figure 7. OIP3 vs. Output Power (POUT) and Frequency 8 1 S22 7 S11, S22, S12 (db) S12 S FREQUENCY (GHz) Figure. Input Return Loss (S11), Output Return Loss (S22), and Reverse Isolation (S12) vs. Frequency NOISE FIGURE (db) 6 +8 C 4 +2 C 3 4 C FREQUENCY (GHz) Figure 8. Noise Figure vs. Frequency and Temperature Rev. C Page 8 of 13
9 PERCENTAGE (%) 3 PERCENTAGE (%) OIP3 (dbm) NOISE FIGURE (db) Figure 9. OIP3 Distribution at 9 MHz Figure 12. Noise Figure Distribution at 9 MHz V, +8 C PERCENTAGE (%) 1 1 SUPPLY CURRENT (ma) V, +2 C V, 4 C P1dB (dbm) P OUT (dbm) Figure 1. P1dB Distribution at 9 MHz Figure 13. Supply Current vs. POUT 4 3 PERCENTAGE (%) GAIN (db) Figure 11. Gain Distribution at 9 MHz Rev. C Page 9 of 13
10 Data Sheet OPERATING TO MHz VPOS = V and TA = 2 C, unless otherwise noted. C1 =.1 µf, C2 =.1 µf, L1 = 1 µh. 4 4 OIP3 4 4 OIP3 (+2 C) OIP3 (+8 C) GAIN, P1dB, OIP3, NF (db, dbm) GAIN NF P1dB OIP3 AND P1dB (dbm) OIP3 ( 4 C) P1dB (+8 C) P1dB (+2 C) P1dB ( 4 C) Figure 14. Gain, P1dB, OIP3, and Noise Figure vs. Frequency Figure 17. OIP3 and P1dB vs. Frequency and Temperature GAIN (db) C 4 C +8 C OIP3 (dbm) MHz 14MHz MHz 6MHz Figure 1. Gain vs. Frequency and Temperature P OUT (dbm) Figure 18. OIP3 vs. Output Power (POUT) and Frequency S11, S22, S22 (db) S11 S22 S12 NOISE FIGURE (db) C +2 C 4 C Figure 16. Input Return Loss (S11), Output Return Loss (S22), and Reverse Isolation (S12) vs. Frequency Figure 19. Noise Figure vs. Frequency and Temperature Rev. C Page 1 of 13
11 BASIC CONNECTIONS The basic connections for operating the are shown in Figure. Recommended components are listed in Table. The input and output should be ac-coupled with appropriately sized capacitors (device characterization was performed with 33 pf capacitors). A V dc bias is supplied to the amplifier via VPOS (Pin ) and through a biasing inductor connected to RFOUT (Pin 8). The bias voltage should be decoupled using a 1 µf capacitor, a 1.2 nf capacitor, and two 68 pf capacitors. RFIN VCC C1 33pF C3 1µF C6 1µF 1 RFIN CB C 1.2nF RFOUT VPOS C4 68pF L1 47nH VCC C7 68pF Figure. Basic Connections C2 33pF RFOUT For operation below MHz, a larger biasing choke and ac coupling capacitors are necessary (see Table ). Figure 21 shows Input return loss, output return loss, and gain for frequencies between MHz and MHz. The noise figure performance for operation from MHz to MHz is shown in Figure NOISE FIGURE (db) Figure 22. Noise Figure vs. Frequency from MHz to MHz SOLDERING INFORMATION AND RECOMMENDED PCB LAND PATTERN Figure 23 shows the recommended land pattern for the. To minimize thermal impedance, the exposed paddle on the package underside should be soldered down to a ground plane along with Pin 2, Pin 3, Pin 6, and Pin 7. If multiple ground layers exist, they should be stitched together using vias (a minimum of five vias is recommended). For more information on land pattern design and layout, refer to Application Note AN-772, A Design and Manufacturing Guide for the Lead Frame Chip Scale Package (LFCSP). 2.3mm GAIN (db) S21 S RETURN LOSS (db).mm PIN 1 1.8mm PIN mm 18. S22 4 PIN 4 PIN Figure 21. Input Return Loss (S11), Output Return Loss (S22), and Gain (S21) vs. Frequency mm 1.3mm Figure 23. Recommended Land Pattern Table. Recommended Components for Basic Connections Frequency C1 C2 C3 L1 C4 C C6 C7 MHz to MHz.1 µf.1 µf 1 µf 1 µh (Coilcraft 8LS-12XJL_ or equivalent) 68 pf 1.2 nf 1 µf 68 pf MHz to MHz.1 µf.1 µf 1 µf 47 nh (Coilcraft 63LS-471NXJL_ or equivalent) 68 pf 1.2 nf 1 µf 68 pf MHz to 6 MHz 33 pf 33 pf 1 µf 47 nh (Coilcraft 63CS-47NXJL_ or equivalent) 68 pf 1.2 nf 1 µf 68 pf Rev. C Page 11 of 13
12 Data Sheet EVALUATION BOARD Figure 26 shows the schematic for the evaluation board. The board is powered by a single V supply. W1 The components used on the board are listed in Table 6. Power can be applied to the board through clip-on leads (VCC and ) or through a 2-pin header (W1). RFIN VCC C1 33pF 1 C6 1µF RFIN C 1.2nF RFOUT C4 68pF 8 L1 47nH C2 33pF RFOUT C3 1µF 4 CB DUT1 VPOS C7 68pF C8 OPEN C9 OPEN VCC Figure 24. Evaluation Board Layout (Bottom) Figure 26. Evaluation Board Schematic Figure 2. Evaluation Board Layout (Top) Table 6. Evaluation Board Configuration Options Component Function Default Value DUT1 Gain block C1, C2 AC coupling capacitors 33 pf, 42 C3 Low frequency bypass capacitor 1 μf, 8 C4, C, C6, C7, C8, C9 Power supply decoupling capacitors C4, C7 = 68 pf, 63 C = 1.2 nf, 63 C6 = 1 μf, 8 C8, C9 = open L1 DC bias inductor 47 nh, 63 (Coilcraft 63CS-47NXJL_ or equivalent) VCC and Clip-on terminals for power supply W1 2-pin header for connection of ground and supply via cable Rev. C Page 12 of 13
13 OUTLINE DIMENSIONS SQ BSC 8 PIN 1 INDEX AREA TOP VIEW..4.3 EXPOSED PAD 4 1 BOTTOM VIEW PIN 1 INDICATOR (R.1) SEATING PLANE MAX.2 NOM COPLANARITY.8.3 REF FOR PROPER CONNECTION OF THE EXPOSED PAD, REFER TO THE PIN CONFIGURATION AND FUNCTION DESCRIPTIONS SECTION OF THIS DATA SHEET. COMPLIANT TOJEDEC STANDARDS MO-229-WEED Figure Lead Lead Frame Chip Scale Package [LFCSP_WD] 3 mm 3 mm Body, Very Very Thin, Dual Lead (CP-8-13) Dimensions shown in millimeters A ORDERING GUIDE Model 1 Temperature Range Package Description Package Option Branding ACPZ-R7 4 C to +8 C 8-Lead LFCSP_WD, 7 Tape and Reel CP-8-13 Q1 -EVALZ Evaluation Board 1 Z = RoHS Compliant Part. 7 1 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. D /1(C) Rev. C Page 13 of 13
20 MHz to 500 MHz IF Gain Block ADL5531
Data Sheet FEATURES Fixed gain of 20 db Operation up to 500 MHz Input/output internally matched to 50 Ω Integrated bias control circuit Output IP3 41 dbm at 70 MHz 39 dbm at 190 MHz Output 1 db compression:
20 MHz to 500 MHz IF Gain Block ADL5531
20 MHz to 500 MHz IF Gain Block ADL5531 FEATURES Fixed gain of 20 db Operation up to 500 MHz Input/output internally matched to 50 Ω Integrated bias control circuit Output IP3 41 dbm at 70 MHz 39 dbm at
50 MHz to 4.0 GHz RF/IF Gain Block ADL5602
Data Sheet FEATURES Fixed gain of 20 db Operation from 50 MHz to 4.0 GHz Highest dynamic range gain block Input/output internally matched to 50 Ω Integrated bias control circuit OIP3 of 42.0 dbm at 2.0
DC to 1000 MHz IF Gain Block ADL5530
Data Sheet FEATURES Fixed gain of 16. db Operation up to MHz 37 dbm Output Third-Order Intercept (OIP3) 3 db noise figure Input/output internally matched to Ω Stable temperature and power supply 3 V or
30 MHz to 6 GHz RF/IF Gain Block ADL5611
Data Sheet FEATURES Fixed gain of 22.2 db Broad operation from 3 MHz to 6 GHz High dynamic range gain block Input and output internally matched to Ω Integrated bias circuit OIP3 of 4. dbm at 9 MHz P1dB
30 MHz to 6 GHz RF/IF Gain Block ADL5544
Data Sheet FEATURES Fixed gain of 17.4 db Broadband operation from 3 MHz to 6 GHz Input/output internally matched to Ω Integrated bias control circuit OIP3 of 34.9 dbm at 9 MHz P1dB of 17.6 dbm at 9 MHz
30 MHz to 6 GHz RF/IF Gain Block ADL5611
Preliminary Technical Data FEATURES Fixed gain of 22.1 db Broad operation from 30 MHz to 6 GHz High dynamic range gain block Input/output internally matched to 50 Ω Integrated bias control circuit OIP3
30 MHz to 6 GHz RF/IF Gain Block ADL5610
Data Sheet FEATURES Fixed gain of 18.4 db Broad operation from 3 MHz to 6 GHz High dynamic range gain block Input and output internally matched to Ω Integrated bias circuit OIP3 of 38.8 dbm at 9 MHz P1dB
DC to 1000 MHz IF Gain Block ADL5530
DC to MHz IF Gain Block ADL3 FEATURES Fixed gain of 6. db Operation up to MHz 37 dbm Output Third-Order Intercept (OIP3) 3 db noise figure Input/output internally matched to Ω Stable temperature and power
400 MHz to 4000 MHz Low Noise Amplifier ADL5523
FEATURES Operation from MHz to MHz Noise figure of. db at 9 MHz Requires few external components Integrated active bias control circuit Integrated dc blocking capacitors Adjustable bias for low power applications
1 MHz to 2.7 GHz RF Gain Block AD8354
Data Sheet FEATURES Fixed gain of 2 db Operational frequency of 1 MHz to 2.7 GHz Linear output power up to 4 dbm Input/output internally matched to Ω Temperature and power supply stable Noise figure: 4.2
100 MHz to 4000 MHz RF/IF Digitally Controlled VGA ADL5240
1 MHz to 4 MHz RF/IF Digitally Controlled VGA ADL524 FEATURES Operating frequency from 1 MHz to 4 MHz Digitally controlled VGA with serial and parallel interfaces 6-bit,.5 db digital step attenuator 31.5
400 MHz to 4000 MHz ½ Watt RF Driver Amplifier ADL5324
Data Sheet FEATURES Operation from MHz to MHz Gain of 14.6 db at 21 MHz OIP of 4.1 dbm at 21 MHz P1dB of 29.1 dbm at 21 MHz Noise figure of.8 db Dynamically adjustable bias Adjustable power supply bias:.
1 MHz to 2.7 GHz RF Gain Block AD8354
1 MHz to 2.7 GHz RF Gain Block AD834 FEATURES Fixed gain of 2 db Operational frequency of 1 MHz to 2.7 GHz Linear output power up to 4 dbm Input/output internally matched to Ω Temperature and power supply
400 MHz 4000 MHz Low Noise Amplifier ADL5521
FEATURES Operation from 400 MHz to 4000 MHz Noise figure of 0.8 db at 900 MHz Including external input match Gain of 20.0 db at 900 MHz OIP3 of 37.7 dbm at 900 MHz P1dB of 22.0 dbm at 900 MHz Integrated
LF to 4 GHz High Linearity Y-Mixer ADL5350
LF to GHz High Linearity Y-Mixer ADL535 FEATURES Broadband radio frequency (RF), intermediate frequency (IF), and local oscillator (LO) ports Conversion loss:. db Noise figure:.5 db High input IP3: 25
1:2 Single-Ended, Low Cost, Active RF Splitter ADA4304-2
FEATURES Ideal for CATV and terrestrial applications Excellent frequency response.6 GHz, 3 db bandwidth db flatness to. GHz Low noise figure: 4. db Low distortion Composite second order (CSO): 62 dbc Composite
10 W, Failsafe, GaAs, SPDT Switch 0.2 GHz to 2.7 GHz HMC546LP2E
FEATURES High input P.dB: 4 dbm Tx Low insertion loss:.4 db High input IP3: 67 dbm Positive control: V low control; 3 V to 8 V high control Failsafe operation: Tx is on when no dc power is applied APPLICATIONS
Features. = +25 C, Vs = +5V, Vpd = +5V, Vbias=+5V
v4.1217 HMC49LP4E Typical Applications This amplifier is ideal for use as a power amplifier for 3.3-3.8 GHz applications: WiMAX 82.16 Fixed Wireless Access Wireless Local Loop Functional Diagram Features
Features. = +25 C, Vcc = 5V, Vpd = 5V. Parameter Min. Typ. Max. Min. Typ. Max. Units
v2.717 MMIC AMPLIFIER, 4 - GHz Typical Applications The is ideal for: Cellular / PCS / 3G Fixed Wireless & WLAN CATV, Cable Modem & DBS Microwave Radio & Test Equipment IF & RF Applications Functional
High Isolation, Silicon SPDT, Nonreflective Switch, 0.1 GHz to 6.0 GHz HMC8038W
5 6 7 8 6 5 4 3 FEATURES Nonreflective, 50 Ω design High isolation: 60 db typical Low insertion loss: 0.8 db typical High power handling 34 dbm through path 29 dbm terminated path High linearity P0.dB:
700 MHz to 4200 MHz, Tx DGA ADL5335
FEATURES Differential input to single-ended output conversion Broad input frequency range: 7 MHz to 42 MHz Maximum gain: 12. db typical Gain range of 2 db typical Gain step size:.5 db typical Glitch free,
10 W, GaN Power Amplifier, 2.7 GHz to 3.8 GHz HMC1114
9 13 16 FEATURES High saturated output power (PSAT): 41.5 dbm typical High small signal gain: db typical High power gain for saturated output power:.5 db typical Bandwidth: 2.7 GHz to 3.8 GHz High power
High Isolation, Silicon SP4T, Nonreflective Switch, 9 khz to 12.0 GHz ADRF5040
RF4 RF3 7 8 9 1 11 12 21 2 19 RF2 High Isolation, Silicon SP4T, Nonreflective Switch, 9 khz to 12. GHz ADRF54 FEATURES FUNCTIONAL BLOCK DIAGRAM Nonreflective 5 Ω design Positive control range: V to 3.3
Features. = +25 C, Vcc =5V, Vpd = 5V. Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max Units
v2.917 Typical Applications Features The is ideal for: Point-to-Point Radios Point-to-Multipoint Radios VSAT LO Driver for HMC Mixers Military EW & ECM Functional Diagram High Output IP3: +28 dbm Single
GaAs, phemt, MMIC, Low Noise Amplifier, 0.3 GHz to 20 GHz HMC1049LP5E
ACG ACG ACG FEATURES Low noise figure:. db PdB output power:. dbm PSAT output power: 7. dbm High gain: db Output IP: 9 dbm Supply voltage: VDD = 7 V at 7 ma Ω matched input/output (I/O) -lead, mm mm LFCSP
>10 W, GaN Power Amplifier, 0.01 GHz to 1.1 GHz HMC1099
9 1 11 12 13 14 1 16 32 GND 31 29 28 27 26 FEATURES High saturated output power (PSAT):. dbm typical High small signal gain: 18. db typical High power added efficiency (PAE): 69% typical Instantaneous
2 GHz to 28 GHz, GaAs phemt MMIC Low Noise Amplifier HMC7950
Data Sheet FEATURES Output power for db compression (PdB): 6 dbm typical Saturated output power (PSAT): 9. dbm typical Gain: db typical Noise figure:. db typical Output third-order intercept (IP3): 6 dbm
Features. Parameter* Min. Typ. Max. Units Frequency Range GHz Gain 2 5 db. Gain Variation over Temperature
v3.1 HMC59MSGE AMPLIFIER,. -.9 GHz Typical Applications The HMC59MSGE is ideal for: DTV Receivers Multi-Tuner Set Top Boxes PVRs & Home Gateways Functional Diagram Features Single-ended or Balanced Output
Nonreflective, Silicon SP4T Switch, 0.1 GHz to 6.0 GHz HMC7992
Nonreflective, Silicon SP4T Switch,.1 GHz to 6. GHz FEATURES Nonreflective, 5 Ω design High isolation: 45 db typical at 2 GHz Low insertion loss:.6 db at 2 GHz High power handling 33 dbm through path 27
GaAs, phemt, MMIC, Single Positive Supply, DC to 7.5 GHz, 1 W Power Amplifier HMC637BPM5E
9 11 13 31 NIC 3 ACG1 29 ACG2 2 NIC 27 NIC 26 NIC GaAs, phemt, MMIC, Single Positive Supply, DC to 7.5 GHz, 1 W Power Amplifier FEATURES P1dB output power: 2 dbm typical Gain:.5 db typical Output IP3:
Features. Gain: 17 db. OIP3: 25 dbm. = +25 C, Vdd 1, 2 = +3V
v.7 HMCLC Typical Applications The HMCLC is ideal for use as a LNA or driver amplifier for: Point-to-Point Radios Point-to-Multi-Point Radios & VSAT Test Equipment and Sensors Military & Space Functional
Features. = +25 C, Vdd 1, 2, 3 = +3V
v.11 HMC6LC AMPLIFIER, 6-2 GHz Typical Applications The HMC6LC is ideal for use as a LNA or driver amplifier for: Point-to-Point Radios Point-to-Multi-Point Radios & VSAT Test Equipment and Sensors Military
Features = +5V. = +25 C, Vdd 1. = Vdd 2
v1.11 HMC51LP3 / 51LP3E POWER AMPLIFIER, 5-1 GHz Typical Applications The HMC51LP3(E) is ideal for: Microwave Radio & VSAT Military & Space Test Equipment & Sensors Fiber Optics LO Driver for HMC Mixers
Features. = +25 C, Vdd = +15V, Vgg2 = +9.5V [1], Idq = 500 ma [2]
![Features. = +25 C, Vdd = +15V, Vgg2 = +9.5V [1], Idq = 500 ma [2]](/thumbs/88/115381636.jpg "Features. = +25 C, Vdd = +15V, Vgg2 = +9.5V [1], Idq = 500 ma [2]")
v3.41 Typical Applications Features The is ideal for: Test Instrumentation Military & Space Fiber optics Functional Diagram P1dB Output Power: + dbm Psat Output Power: + dbm High Gain: db Output IP3: 42
Features. = +25 C, Vdd = +10 V, Idd = 350 ma
HMC97APME v2.4 POWER AMPLIFIER,.2-22 GHz Typical Applications The HMC97APME is ideal for: Test Instrumentation Military & Space Functional Diagram Features High P1dB Output Power: + dbm High : 14 db High
4 GHz to 18 GHz Divide-by-4 Prescaler ADF5001
4 GHz to 18 GHz Divide-by-4 Prescaler ADF5001 FEATURES Divide-by-4 prescaler High frequency operation: 4 GHz to 18 GHz Integrated RF decoupling capacitors Low power consumption Active mode: 30 ma Power-down
4 GHz to 18 GHz Divide-by-8 Prescaler ADF5002
4 GHz to 18 GHz Divide-by-8 Prescaler ADF5002 FEATURES Divide-by-8 prescaler High frequency operation: 4 GHz to 18 GHz Integrated RF decoupling capacitors Low power consumption Active mode: 30 ma Power-down
12.17 GHz to GHz MMIC VCO with Half Frequency Output HMC1167
9 0 3 4 5 6 9 7 6.7 GHz to 3.33 GHz MMIC VCO with Half Frequency Output FEATURES Dual output frequency range fout =.7 GHz to 3.330 GHz fout/ = 6.085 GHz to 6.665 GHz Output power (POUT): 0.5 dbm Single-sideband
9.25 GHz to GHz MMIC VCO with Half Frequency Output HMC1162
9.5 GHz to 10.10 GHz MMIC VCO with Half Frequency Output HMC116 FEATURES FUTIONAL BLOCK DIAGRAM Dual output f OUT = 9.5 GHz to 10.10 GHz f OUT / = 4.65 GHz to 5.050 GHz Power output (P OUT ): 11 dbm (typical)
11.41 GHz to GHz MMIC VCO with Half Frequency Output HMC1166
9 6 3 30 29 VTUNE 28 27 26.4 GHz to 2.62 GHz MMIC VCO with Half Frequency Output FEATURES Dual output frequency range fout =.4 GHz to 2.62 GHz fout/2 = 5.705 GHz to 6.3 GHz Output power (POUT): dbm Single-sideband
2.3 GHz to 2.4 GHz WiMAX Power Amplifier ADL5570
2.3 GHz to 2. GHz WiMAX Power Amplifier ADL5570 FEATURES Fixed gain of 29 db Operation from 2.3 GHz to 2. GHz EVM 3% at POUT = 25 dbm with 6 QAM OFDMA Input internally matched to 50 Ω Power supply: 3.2
12.92 GHz to GHz MMIC VCO with Half Frequency Output HMC1169
Data Sheet 12.92 GHz to 14.07 GHz MMIC VCO with Half Frequency Output FEATURES Dual output frequency range fout = 12.92 GHz to 14.07 GHz fout/2 = 6.46 GHz to 7.035 GHz Output power (POUT): 11.5 dbm SSB
2GHz Balanced Mixer with Low Side LO Buffer, and RF Balun ADL5365
2GHz Balanced Mixer with Low Side LO Buffer, and RF Balun FEATURES Power Conversion Loss of 6.5dB RF Frequency 15MHz to 25MHz IF Frequency DC to 45 MHz SSB Noise Figure with 1dBm Blocker of 18dB Input
High IP3, 10 MHz to 6 GHz, Active Mixer ADL5801
FEATURES Broadband upconverter/downconverter Power conversion gain of 1.8 db Broadband RF, LO, and IF ports SSB noise figure (NF) of 9.7 db Input IP3: 8. dbm Input P1dB: 13.3 dbm Typical LO drive: dbm
Features. = +25 C, Vdd1, 2, 3 = 5V, Idd = 250 ma*
v.4 HMC498LC4 Typical Applications Features The HMC498LC4 is ideal for use as a LNA or Driver amplifier for: Point-to-Point Radios Point-to-Multi-Point Radios & VSAT Test Equipment & Sensors Military End-Use
Features = +5V. = +25 C, Vdd 1. = Vdd 2
v7.11 HMC1LC3 POWER AMPLIFIER, - GHz Typical Applications The HMC1LC3 is ideal for use as a medium power amplifier for: Microwave Radio & VSAT Military & Space Test Equipment & Sensors Fiber Optics LO
6 GHz to 26 GHz, GaAs MMIC Fundamental Mixer HMC773ALC3B
FEATURES Conversion loss: 9 db typical Local oscillator (LO) to radio frequency (RF) isolation: 37 db typical LO to intermediate frequency (IF) isolation: 37 db typical RF to IF isolation: db typical Input
Features. = +25 C, Vcc = +5.0V. Vcc = +5V Parameter
Typical Applications Ideal as a Driver & Amplifier for: 2.2-2.7 GHz MMDS 3. GHz Wireless Local Loop - 6 GHz UNII & HiperLAN Functional Diagram Features P1dB Output Power: +14 dbm Output IP3: +27 dbm Gain:
Features. = +25 C, Vdd = +3V
v.117 HMC3LPE Typical Applications Features The HMC3LPE is ideal for: Millimeterwave Point-to-Point Radios LMDS VSAT SATCOM Functional Diagram Low Noise Figure:. db High Gain: db Single Positive Supply:
1 MHz to 8 GHz, 70 db Logarithmic Detector/Controller AD8318-EP
Enhanced Product FEATURES Wide bandwidth: MHz to 8 GHz High accuracy: ±. db over db range (f
Features. = +25 C, Vdd= 8V, Vgg2= 3V, Idd= 290 ma [1]
![Features. = +25 C, Vdd= 8V, Vgg2= 3V, Idd= 290 ma [1]](/thumbs/95/123095816.jpg "Features. = +25 C, Vdd= 8V, Vgg2= 3V, Idd= 290 ma [1]")
Typical Applications The is ideal for: Telecom Infrastructure Microwave Radio & VSAT Military EW, ECM & C 3 I Test Instrumentation Fiber Optics Functional Diagram Features P1dB Output Power: + dbm Gain:
2300 MHz to 2900 MHz Balanced Mixer, LO Buffer and RF Balun ADL5363
Data Sheet 2300 MHz to 2900 MHz Balanced Mixer, LO Buffer and RF Balun FEATURES RF frequency range of 2300 MHz to 2900 MHz IF frequency range of dc to 450 MHz Power conversion loss: 7.7 db SSB noise figure
Features. = +25 C, Vdd = +4V, Idd = 90 ma [2]
![Features. = +25 C, Vdd = +4V, Idd = 90 ma [2]](/thumbs/89/98833557.jpg "Features. = +25 C, Vdd = +4V, Idd = 90 ma [2]")
v.91 HMCLCB AMPLIFIER, 1-27 GHz Typical Applications This HMCLCB is ideal for: Features Noise Figure: 2.2 db @ 2 GHz Point-to-Point Radios Point-to-Multi-Point Radios Military & Space Test Instrumentation
SURFACE MOUNT PHEMT 2 WATT POWER AMPLIFIER,
v2.617 AMPLIFIER, - 12 GHz Typical Applications The is ideal for use as a power amplifier for: Point-to-Point Radios Point-to-Multi-Point Radios Test Equipment and Sensors Military End-Use Features Saturated
Features. DC GHz GHz GHz DC GHz GHz GHz GHz DC - 4 GHz GHz Supply Current (Icq) ma
HMC311ST9 / 311ST9E v.17 MMIC AMPLIFIER, DC - GHz Typical Applications The HMC311ST9(E) is ideal for: Cellular / PCS / 3G Fixed Wireless & WLAN CATV & Cable Modem Microwave Radio Functional Diagram Features
OBSOLETE. Active RF Splitter ADA FEATURES FUNCTIONAL BLOCK DIAGRAM APPLICATIONS GENERAL DESCRIPTION
FEATURES Single V supply 4 MHz to 86 MHz CATV operating range 4.6 db of gain per output channel 4.4 db noise figure 2 db isolation between output channels 16 db input return loss CSO of 73 dbc (13 channels,
100 MHz to 30 GHz, Silicon SPDT Switch ADRF5020
FEATURES Ultrawideband frequency range: 1 MHz to 3 GHz Nonreflective 5 Ω design Low insertion loss:. db to 3 GHz High isolation: 6 db to 3 GHz High input linearity 1 db power compression (P1dB): 8 dbm
500 MHz to 1700 MHz Balanced Mixer, LO Buffer, IF Amplifier, and RF Balun ADL5357
MHz to 17 MHz Balanced Mixer, LO Buffer, IF Amplifier, and RF Balun FEATURES FUNCTIONAL BLOCK DIAGRAM RF frequency range of MHz to 17 MHz IF frequency range of 3 MHz to MHz Power conversion gain:. db SSB
5.5 GHz to 14 GHz, GaAs MMIC Fundamental Mixer HMC558A. Data Sheet FEATURES FUNCTIONAL BLOCK DIAGRAM APPLICATIONS GENERAL DESCRIPTION
FEATURES Conversion loss: 7.5 db typical at 5.5 GHz to 1 GHz Local oscillator (LO) to radio frequency (RF) isolation: 45 db typical at 5.5 GHz to 1 GHz LO to intermediate frequency (IF) isolation: 45 db
High Isolation, Nonreflective, GaAs, SPDT Switch,100 MHz to 4 GHz HMC349AMS8G
Data Sheet High Isolation, Nonreflective, GaAs, SPDT Switch,1 MHz to 4 GHz FEATURES Nonreflective, 5 Ω design High isolation: 57 db to 2 GHz Low insertion loss:.9 db to 2 GHz High input linearity 1 db
GaAs phemt MMIC Low Noise Amplifier, 0.3 GHz to 20 GHz HMC1049
ACG ACG ACG FEATURES Low noise figure:. db PdB output power:. dbm PSAT output power: 7. dbm High gain: db Output IP: 9 dbm Supply voltage: VDD = 7 V at 7 ma Ω matched input/output (I/O) -lead mm mm SMT
Features. Parameter Min Typ. Max Min Typ. Max Min Typ Max Units Frequency Range GHz Gain
Typical Applications The HMC82LP4E is ideal for: Point-to-Point Radios Point-to-Multi-Point Radios VSAT & SATCOM Marine Radar Military EW & ECM Functional Diagram Features High Saturated Output Power:
10 GHz to 20 GHz, GaAs, MMIC, Double Balanced Mixer HMC554ALC3B
Data Sheet FEATURES Conversion loss: 8. db LO to RF Isolation: 37 db Input IP3: 2 dbm RoHS compliant, 2.9 mm 2.9 mm, 12-terminal LCC package APPLICATIONS Microwave and very small aperture terminal (VSAT)
1200 MHz to 2500 MHz Balanced Mixer, LO Buffer, IF Amplifier, and RF Balun ADL5355
MHz to MHz Balanced Mixer, LO Buffer, IF Amplifier, and RF Balun ADL3 FEATURES FUNCTIONAL BLOCK DIAGRAM RF frequency range of MHz to MHz IF frequency range of 3 MHz to MHz Power conversion gain:. db SSB
Features. = +25 C, Vdd = 5V
v3.117 HMC1LH5 Typical Applications The HMC1LH5 is a medium PA for: Telecom Infrastructure Military Radio, Radar & ECM Space Systems Test Instrumentation Functional Diagram Features Gain: 5 db Saturated
5.5 GHz to 8.6 GHz, GaAs, MMIC, I/Q Upconverter HMC6505A
Data Sheet FEATURES Conversion gain: db typical Sideband rejection: dbc typical Output P1dB compression at maximum gain: dbm typical Output IP3 at maximum gain: dbm typical LO to RF isolation: db typical
HMC618ALP3E AMPLIFIERS - LOW NOISE - SMT. GaAs SMT phemt LOW NOISE AMPLIFIER, GHz. Typical Applications. Features. Functional Diagram
7 Typical Applications The is ideal for: Cellular/3G and LTE/WiMAX/4G BTS & Infrastructure Repeaters and Femto Cells Public Safety Radios Functional Diagram v. Electrical Specifications T A = + C, Rbias
6 GHz to 10 GHz, GaAs, MMIC, I/Q Mixer HMC520A
11 7 8 9 FEATURES Radio frequency (RF) range: 6 GHz to 1 GHz Local oscillator (LO) input frequency range: 6 GHz to 1 GHz Conversion loss: 8 db typical at 6 GHz to 1 GHz Image rejection: 23 dbc typical
GaAs, MMIC Fundamental Mixer, 2.5 GHz to 7.0 GHz HMC557A
FEATURES Conversion loss: db LO to RF isolation: db LO to IF isolation: 3 db Input third-order intercept (IP3): 1 dbm Input second-order intercept (IP2): dbm LO port return loss: dbm RF port return loss:
20 GHz to 44 GHz, GaAs, phemt, MMIC, Low Noise Amplifier HMC1040CHIPS
Data Sheet FEATURES Low noise figure: 2 db typical High gain: 25. db typical P1dB output power: 13.5 dbm, 2 GHz to GHz High output IP3: 25.5 dbm typical Die size: 1.39 mm 1..2 mm APPLICATIONS Software
2200 MHz to 2700 MHz Balanced Mixer, LO Buffer, IF Amplifier, and RF Balun ADL5353
22 MHz to 27 MHz Balanced Mixer, LO Buffer, IF Amplifier, and RF Balun FEATURES Frequency ranges of 22 MHz to 27 MHz (RF) and 3 MHz to 45 MHz (IF) Power conversion gain:.7 db Input IP3 of 24.5 dbm and
1 MHz to 10 GHz, 45 db Log Detector/Controller AD8319
FEATURES Wide bandwidth: 1 MHz to 10 GHz High accuracy: ±1.0 db over temperature 45 db dynamic range up to 8 GHz Stability over temperature: ±0.5 db Low noise measurement/controller output VOUT Pulse response
1200 MHz to 2500 MHz Balanced Mixer, LO Buffer and RF Balun ADL5365
1200 MHz to 2500 MHz Balanced Mixer, LO Buffer and RF Balun ADL5365 FEATURES RF frequency range of 1200 MHz to 2500 MHz IF frequency range of dc to 450 MHz Power conversion loss: 7.3 db SSB noise figure
Parameter Frequency Min. Typ. Max. Units GHz GHz Attenuation Range GHz 31.5 db
v.37. db LSB GaAs MMIC 6-BIT DIGITAL POSITIVE CONTROL ATTENUATOR,. - 8. GHz Typical Applications Features ATTENUATORS - SMT The HMCALP3E is ideal for: WLAN & Point-to-Multi-Point Fiber Optics & Broadband
HMC471MS8G / 471MS8GE. Features OBSOLETE. DC GHz GHz GHz GHz GHz
v1.65 Typical Applications The HMC471MSG / HMC471MSGE is a dual RF/IF gain block & LO or PA driver: Cellular / PCS / 3G Fixed Wireless & WLAN CATV, Cable Modem & DBS Microwave Radio & Test Equipment Functional
Features. = +25 C, 50 Ohm system
HMC12ALC4 Typical Applications v7.617 ATTENUATOR, 5-3 GHz Features The HMC12ALC4 is ideal for: Point-to-Point Radio VSAT Radio Test Instrumentation Microwave Sensors Military, ECM & Radar Functional Diagram
8.5 GHz to 13.5 GHz, GaAs, MMIC, I/Q Mixer HMC521ALC4
11 7 8 9 FEATURES Downconverter, 8. GHz to 13. GHz Conversion loss: 9 db typical Image rejection: 27. dbc typical LO to RF isolation: 39 db typical Input IP3: 16 dbm typical Wide IF bandwidth: dc to 3.
2 GHz to 30 GHz, GaAs, phemt, MMIC, Low Noise Amplifier HMC8402
2 GHz to 3 GHz, GaAs, phemt, MMIC, Low Noise Amplifier HMC842 FEATURES Output power for 1 db compression (P1dB): 21. dbm typical Saturated output power (PSAT): 22 dbm typical Gain: 13. db typical Noise
50 GHz to 95 GHz, GaAs, phemt, MMIC, Wideband Power Amplifier ADPA7001CHIPS
FEATURES Gain:.5 db typical at 5 GHz to 7 GHz S11: db typical at 5 GHz to 7 GHz S: 19 db typical at 5 GHz to 7 GHz P1dB: 17 dbm typical at 5 GHz to 7 GHz PSAT: 1 dbm typical OIP3: 5 dbm typical at 7 GHz
CGA-6618Z Dual CATV 5MHz to 1000MHz High Linearity GaAs HBT Amplifier CGA-6618Z DUAL CATV 5MHz to 1000MHz HIGH LINEARITY GaAs HBT AMPLIFIER Package: E
Dual CATV 5MHz to 1MHz High Linearity GaAs HBT Amplifier DUAL CATV 5MHz to 1MHz HIGH LINEARITY GaAs HBT AMPLIFIER Package: ESOP- Product Description RFMD s CGA-1Z is a high performance GaAs HBT MMIC amplifier.
GaAs, phemt, MMIC, Power Amplifier, HMC1126. Data Sheet FEATURES FUNCTIONAL BLOCK DIAGRAM APPLICATIONS GENERAL DESCRIPTION
Data Sheet GaAs, phemt, MMIC, Power Amplifier, GHz to GHz FEATURES FUNCTIONAL BLOCK DIAGRAM Output power for 1 db compression (P1dB): 1. db typical Saturated output power (PSAT): 1 dbm typical Gain: 11
GaAs, phemt, MMIC, Power Amplifier, 2 GHz to 50 GHz HMC1126
GaAs, phemt, MMIC, Power Amplifier, 2 GHz to GHz FEATURES FUNCTIONAL BLOCK DIAGRAM Output power for 1 db compression (P1dB): 1. db typical Saturated output power (PSAT): dbm typical Gain: 11 db typical
4 GHz to 8.5 GHz, GaAs, MMIC, I/Q Mixer HMC525ALC4
Data Sheet FEATURES Passive: no dc bias required Conversion loss: 8 db (typical) Input IP3: 2 dbm (typical) LO to RF isolation: 47 db (typical) IF frequency range: dc to 3. GHz RoHS compliant, 24-terminal,
0.1 GHz to 18 GHz, GaAs SP4T Switch HMC641A
Data Sheet 0. GHz to 8 GHz, GaAs SP4T Switch FEATURES Broadband frequency range: 0. GHz to 8 GHz Nonreflective 50 Ω design Low insertion loss: 2. db to 2 GHz High isolation: 42 db to 2 GHz High input linearity
Features. Gain: 14.5 db. Electrical Specifications [1] [2] = +25 C, Rbias = 825 Ohms for Vdd = 5V, Rbias = 5.76k Ohms for Vdd = 3V
![Features. Gain: 14.5 db. Electrical Specifications [1] [2] = +25 C, Rbias = 825 Ohms for Vdd = 5V, Rbias = 5.76k Ohms for Vdd = 3V](/thumbs/90/101370216.jpg "Features. Gain: 14.5 db. Electrical Specifications [1] [2] = +25 C, Rbias = 825 Ohms for Vdd = 5V, Rbias = 5.76k Ohms for Vdd = 3V")
Typical Applications The HMC77ALP3E is ideal for: Fixed Wireless and LTE/WiMAX/4G BTS & Infrastructure Repeaters and Femtocells Public Safety Radio Access Points Functional Diagram Features Noise Figure:.
21 GHz to 27 GHz, GaAs, MMIC, I/Q Upconverter HMC815B
Data Sheet 1 GHz to 7 GHz, GaAs, MMIC, I/Q Upconverter HMC1B FEATURES Conversion gain: db typical Sideband rejection: dbc typical OP1dB compression: dbm typical OIP3: 7 dbm typical LO to RF isolation:
Features. = +25 C, VDD = +5 V, 0 dbm Drive Level [1]
![Features. = +25 C, VDD = +5 V, 0 dbm Drive Level [1]](/thumbs/85/92877431.jpg "Features. = +25 C, VDD = +5 V, 0 dbm Drive Level [1]")
Typical Applications Features The HMC196LP3E is suitable for: Point-to-Point & VSAT Radios Test Instrumentation Military & Space Functional Diagram High Output Power: 12 dbm Low Input Power Drive: -2 to
Continuous Wave Laser Average Power Controller ADN2830
a FEATURES Bias Current Range 4 ma to 200 ma Monitor Photodiode Current 50 A to 1200 A Closed-Loop Control of Average Power Laser and Laser Alarms Automatic Laser Shutdown, Full Current Parameter Monitoring
Four White LED Backlight Driver ADM8843
Data Sheet FEATURES Drives 4 LEDs from a.6 V to 5.5 V (Li-Ion) input supply /.5 / fractional charge pump to maximize power efficiency 0.3% typical LED current matching Up to 88% power efficiency over Li-Ion
Features. = +25 C, Vdd= 5V, Vgg2= Open, Idd= 60 ma*
v.7 HMCLH AGC AMPLIFIER, - GHz Typical Applications The HMCLH is ideal for: Telecom Infrastructure Microwave Radio & VSAT Military EW, ECM & C I Test Instrumentation Fiber Optics Functional Diagram Features
HMC480ST89 / 480ST89E
v2.7 HMCST9 / ST9E Typical Applications The HMCST9 / HMCST9E is an ideal RF/IF gain block & LO or PA driver for: Cellular / PCS / 3G Fixed Wireless & WLAN CATV, Cable Modem & DBS Microwave Radio & Test
IF Digitally Controlled Variable-Gain Amplifier
19-2601; Rev 1; 2/04 IF Digitally Controlled Variable-Gain Amplifier General Description The high-performance, digitally controlled variable-gain amplifier is designed for use from 0MHz to 400MHz. The
0.4 Ω CMOS, Dual DPDT Switch in WLCSP/LFCSP/TSSOP ADG888
FEATURES.8 V to 5.5 V operation Ultralow on resistance.4 Ω typical.6 Ω maximum at 5 V supply Excellent audio performance, ultralow distortion.7 Ω typical.4 Ω maximum RON flatness High current carrying
SGB-6433(Z) Vbias RFOUT
SGB-6433(Z) DC to 3.5GHz ACTIVE BIAS GAIN BLOCK RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: 3x3 QFN, 16-Pin Product Description RFMD s SGB-6433 is a high performance SiGe HBT MMIC amplifier
81 GHz to 86 GHz, E-Band Power Amplifier With Power Detector HMC8142
Data Sheet 8 GHz to 86 GHz, E-Band Power Amplifier With Power Detector FEATURES GENERAL DESCRIPTION Gain: db typical The is an integrated E-band gallium arsenide (GaAs), Output power for db compression
Logic Controlled, High-Side Power Switch with Reverse Current Blocking ADP195
Data Sheet Logic Controlled, High-Side Power Switch with Reverse Current Blocking ADP95 FEATURES Ultralow on resistance (RDSON) 5 mω @.6 V 55 mω @.5 V 65 mω @.8 V mω @. V Input voltage range:. V to.6 V.
Features. = +25 C, With 0/+5V Control, 50 Ohm System
Typical Applications This switch is suitable for usage in 50-Ohm or 75-Ohm systems: Broadband Fiber Optics Switched Filter Banks Wireless below 8 GHz Functional Diagram Features Broadband Performance:
ADL MHz to 2700 MHz, Dual-Balanced Mixer, LO Buffer, IF Amplifier, and RF Balun. Data Sheet FEATURES FUNCTIONAL BLOCK DIAGRAM APPLICATIONS
2 MHz to MHz, Dual-Balanced Mixer, LO Buffer, IF Amplifier, and RF Balun FEATURES FUNCTIONAL BLOCK DIAGRAM RF frequency range of 2 MHz to MHz IF frequency range of 3 MHz to 45 MHz Power conversion gain:.
71 GHz to 76 GHz, 1 W E-Band Power Amplifier with Power Detector ADMV7710
Data Sheet FEATURES Gain: db typical Output power for db compression: dbm typical Saturated output power: 29 dbm typical Output third-order intercept: dbm typical Input return loss: 8 db typical Output