RF Power GaN Transistor

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1 Freescale Semiconductor Technical Data Document Number: AGS16--1S Rev., 5/15 RF ower GaN Transistor This 3 W RF power GaN transistor is designed for cellular base station applications covering the frequency range of 18 to MHz. This part is characterized and performance is guaranteed for applications operating in the 18 to MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies. 1 MHz Typical Single--Carrier W--CDMA erformance: V DD =8Vdc, I DQ = 15 ma, out = 3 W Avg., Input Signal AR = 9.9 robability on CCDF. AGS16-1SR3 18 MHz, 3 W AVG., 8 V AIRFAST RF OWR GaN TRANSISTOR Frequency G ps (db) Output AR (db) ACR (dbc) IRL (db) 11 MHz MHz MHz MHz Typical Single--Carrier W--CDMA erformance: V DD =8Vdc, I DQ = 15 ma, out = 3 W Avg., Input Signal AR = 9.9 robability on CCDF. NI -S -S Frequency G ps (db) Output AR (db) ACR (dbc) IRL (db) 185 MHz MHz MHz RF in /V GS 1 RF out /V DS Features High Terminal Impedances for Optimal Broadband erformance Designed for Digital redistortion rror Correction Systems Optimized for Doherty Applications (Top View) Figure 1. in Connections, 15. All rights reserved. AGS16-1SR3 1

2 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage V DSS 15 Vdc Gate--Source Voltage V GS, Vdc Operating Voltage V DD to+55 Vdc Storage Temperature Range T stg 5to+15 C Case Operating Temperature Range T C 55to+15 C Operating Junction Temperature Range (1) T J 55to+5 C Table. Thermal Characteristics Characteristic Symbol Value () Unit Thermal Resistance, Junction to Case Case Temperature 76 C, 3 W CW, 8 Vdc, I DQ = 15 ma, 1 MHz R JC 1.7 C/W Table 3. SD rotection Characteristics Test Methodology Human Body Model (per JSD--A11) Machine Model (per IA/JSD--A115) Charge Device Model (per JSD--C11) Class 1B A IV Table. lectrical Characteristics (T A =5 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Off Characteristics Drain--Source Leakage Current (V GS =Vdc,V DS =55Vdc) Drain--Source Breakdown Voltage (V GS =Vdc,I D = 16. madc) I DSS 5 madc V (BR)DSS 15 Vdc On Characteristics Gate Threshold Voltage (V DS =1Vdc,I D = 16. Adc) Gate Quiescent Voltage (V DD =8Vdc,I D = 15 madc, Measured in Functional Test) V GS(th) Vdc V GS(Q) Vdc 1. Continuous use at maximum temperature will affect MTTF.. Refer to AN1955, Thermal Measurement Methodology of RF ower Amplifiers. Go to and search for AN1955. (continued) AGS16-1SR3

3 Table. lectrical Characteristics (T A =5 C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Functional Tests (1) (In Freescale Test Fixture, 5 ohm system) V DD =8Vdc,I DQ = 15 ma, out = 3 W Avg., f = 11 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal AR = 9.9 robability on CCDF. ACR measured in 3.8 MHz Channel 5 MHzOffset.[See note on correct biasing sequence.] ower Gain G ps db Drain fficiency % Output eak--to--average robability on CCDF AR db Adjacent Channel ower Ratio ACR 3.3. dbc Input Return Loss IRL 9 db Load Mismatch (In Freescale Test Fixture, 5 ohm system) I DQ = 15 ma, f = 1 MHz VSWR 1:1 at 55 Vdc, 15 W CW Output ower (3 db Input Overdrive from 15 W CW Rated ower) No Device Degradation Typical erformance (In Freescale Test Fixture, 5 ohm system) V DD =8Vdc,I DQ = 15 ma, MHz Bandwidth 1 db Compression oint, CW 1dB 15 W 3 db Compression oint () 3dB 16 W AM/M (Maximum value measured at the 3dB compression point across the MHz bandwidth) VBW Resonance oint (IMD Third Order Intermodulation Inflection oint) 1.8 VBW res 15 MHz Gain Flatness in 6 MHz out =3WAvg. G F. db Gain Variation over Temperature ( 3 C to+85 C) Output ower Variation over Temperature ( 3 C to+85 C) G. db/ C 1dB. db/ C Table 5. Ordering Information Device Tape and Reel Information ackage AGS16--1SR3 R3 Suffix = 5 Units, 3 mm Tape Width, 13--inch Reel NI--S--S 1. art internally input matched.. 3dB = avg + 7. db where avg is the average output power measured using an unclipped W--CDMA single--carrier input signal where output AR is compressed to 7. probability on CCDF. NOT: Correct Biasing Sequence for GaN Depletion Mode Transistors Turning the device ON 1. Set V GS to the pinch--off (V ) voltage, typically 5 V. Turn on V DS to nominal supply voltage (5 V) 3. Increase V GS until I DS current is attained. Apply RF input power to desired level Turning the device OFF 1. Turn RF power off. Reduce V GS downtov, typically 5 V 3. Reduce V DS down to V (Adequate time must be allowed for V DS to reduce to V to prevent severe damage to device.). Turn off V GS AGS16-1SR3 3

4 V GG C6 C7 C9 V DD C1 C13 C16 C5 C8 C1 C R1 C11 C1 C15 C1 C3 C AFGS16--1S Rev. D638 Figure. AGS16-1SR3 Test Circuit Component Layout MHz Table 6. AGS16-1SR3 Test Circuit Component Designations and Values MHz art Description art Number Manufacturer C1, C9, C1, C11, C1, C15 1 pf Chip Capacitors ATC6F1JT5XT ATC C, C3 1.8 pf Chip Capacitors ATC6F1R8BT5XT ATC C 1. pf Chip Capacitor ATC6F1RBT5XT ATC C5 7 pf Chip Capacitor ATC1B71JTXT ATC C6 1 pf Chip Capacitor ATC1B1JT5XT ATC C7, C13 1 F Chip Capacitors GRM3R7A15KA1L Murata C8 1 F Chip Capacitor GRM31CR61H16KA1L Murata C1 1 F Chip Capacitor C575X7SA16M3KB TDK C16 F, 1 V lectrolytic Capacitor V-FKA1M anasonic-cg R / W Chip Resistor CRCW16r37FNA Vishay CB Rogers RO35B,., r =3.66 D638 MTL AGS16-1SR3

5 TYICAL CHARACTRISTICS MHz. V DD =8Vdc, out =3W(Avg.) G ps I DQ = 15 ma, Single--Carrier W--CDMA MHz Channel Bandwidth D Input Signal AR = robability on CCDF ACR ARC IRL f, FRQUNCY (MHz) Figure 3. Single -Carrier Output eak -to -Average Ratio Compression (ARC) Broadband out = 3 Watts Avg. G ps, OWR GAIN (db), DRAIN FFICINCY ACR (dbc) IRL, INUT RTURN LOSS (db) ARC (db) IMD, INTRMODULATION DISTORTION (dbc) V DD =8Vdc, out = 7 W (), I DQ = 15 ma Two--Tone Measurements, (f1 + f)/ = Center Frequency of 1 MHz IM5--U IM3--U IM3--L IM7--U IM5--L IM7--L TWO--TON SACING (MHz) Figure. Intermodulation Distortion roducts versus Two -Tone Spacing G ps, OWR GAIN (db) OUTUT COMRSSION AT.1% ROBABILITY ON CCDF (db) 1 V DD =8Vdc,I DQ = 15 ma, f = 1 MHz Single--Carrier W--CDMA, 3.8 MHz Channel Bandwidth 1 1 db = 15.5 W 3 G ps 3 db =. W 3 db = 3. W ARC 1 ACR Input Signal AR = 9.9 robability on CCDF out, OUTUT OWR (WATTS) Figure 5. Output eak -to -Average Ratio Compression (ARC) versus Output ower 6 5 RAIN FFICINCY ACR (dbc) AGS16-1SR3 5

6 TYICAL CHARACTRISTICS MHz G ps, OWR GAIN (db) MHz 1 MHz 1 MHz MHz 11 MHz 11 MHz 1 MHz 5 V DD =8Vdc,I DQ = 15 ma 18 Single--Carrier W--CDMA, 3.8 MHz Channel Bandwidth, Input Signal 17 MHz 35 AR = robability on CCDF 5 11 MHz G ps 1 15 ACR out, OUTUT OWR (WATTS) AVG. Figure 6. Single -Carrier W -CDMA ower Gain, Drain fficiency and ACR versus Output ower, DRAIN FFICINCY ACR (dbc) 1 V DD =8Vdc in =dbm I DQ = 15 ma Gain 5 5 GAIN (db) 19 1 IRL (db) IRL f, FRQUNCY (MHz) Figure 7. Broadband Frequency Response AGS16-1SR3 6

7 Table 7. Load ull erformance Maximum ower Tuning V DD =8Vdc,I DQ = 136 ma, ulsed CW, 1 sec(on), 1% Duty Cycle f (MHz) Z source Z in Max Output ower 1dB Z (1) load Gain (db) (dbm) (W) j j j j j j j j. 1. j AM/M f (MHz) Z source Z in Max Output ower 3dB Z () load Gain (db) (dbm) (W) j j j j j j j j j (1) Load impedance for optimum 1dB power. () Load impedance for optimum 3dB power. Z source = Measured impedance presented to the input of the device at the package reference plane. Z in = Impedance as measured from gate contact to ground. Z load = Measured impedance presented to the output of the device at the package reference plane. Table 8. Load ull erformance Maximum Drain fficiency Tuning V DD =8Vdc,I DQ = 136 ma, ulsed CW, 1 sec(on), 1% Duty Cycle f (MHz) Z source Z in Max Drain fficiency 1dB Z (1) load Gain (db) (dbm) (W) j j j j j.8.69 j j j j AM/M AM/M f (MHz) Z source Z in Max Drain fficiency 3dB Z () load Gain (db) (dbm) (W) j j j j j j j j j (1) Load impedance for optimum 1dB efficiency. () Load impedance for optimum 3dB efficiency. Z source = Measured impedance presented to the input of the device at the package reference plane. Z in = Impedance as measured from gate contact to ground. Z load = Measured impedance presented to the output of the device at the package reference plane. AM/M Input Load ull Tuner and Test Circuit Device Under Test Output Load ull Tuner and Test Circuit Z source Z in Z load AGS16-1SR3 7

8 1dB - TYICAL LOAD ULL CONTOURS 1 MHz IMAGINARY RAL Figure 8. 1dB Load ull Output ower Contours (dbm) IMAGINARY RAL Figure 9. 1dB Load ull fficiency Contours IMAGINARY RAL Figure 1. 1dB Load ull Gain Contours (db) IMAGINARY RAL Figure 11. 1dB Load ull AM/M Contours Gain Drain fficiency Linearity Output ower NOT: = Maximum Output ower = Maximum Drain fficiency AGS16-1SR3 8

9 3dB - TYICAL LOAD ULL CONTOURS 1 MHz IMAGINARY IMAGINARY RAL Figure 1. 3dB Load ull Output ower Contours (dbm) RAL Figure 13. 3dB Load ull fficiency Contours IMAGINARY RAL Figure 1. 3dB Load ull Gain Contours (db) IMAGINARY RAL Figure 15. 3dB Load ull AM/M Contours NOT: = Maximum Output ower Gain Drain fficiency Linearity Output ower = Maximum Drain fficiency AGS16-1SR3 9

10 V GG C5 C6 C8 C1 V DD C1 C16 C C C7 C9 R1 C11 C13 C1 C15 C1 C3 AGS16--1S Rev. D638 Figure 16. AGS16-1SR3 Test Circuit Component Layout MHz Table 9. AGS16-1SR3 Test Circuit Component Designations and Values MHz art Description art Number Manufacturer C1, C8, C9, C1, C11, C15 1 pf Chip Capacitors ATC6F1JT5XT ATC C 1.1 pf Chip Capacitor ATC6F1RBT5XT ATC C3 1.8 pf Chip Capacitor ATC6F1R8BT5XT ATC C 7 pf Chip Capacitor ATC1B71JTXT ATC C5 1 pf Chip Capacitor ATC1B1JT5XT ATC C6, C1 1 F Chip Capacitors GRM3R7A15KA1L Murata C7 1 F Chip Capacitor GRM31CR61H16KA1L Murata C13 1 F Chip Capacitor C575X7SA16M3KB TDK C1.7 pf Chip Capacitor ATC6FR7BT5XT ATC C16 F, 1 V lectrolytic Capacitor V-FKA1M anasonic-cg R1.37, 1/ W Chip Resistor CRCW16R37FNA Vishay CB Rogers RO35B,., r =3.66 D638 MTL AGS16-1SR3 1

11 TYICAL CHARACTRISTICS MHz V DD =8Vdc, out =3W(Avg.),I DQ = 15 ma Single--Carrier W--CDMA, 3.8 MHz Channel Bandwidth 18.6 Input Signal AR = robability on CCDF G ps ARC ACR IRL f, FRQUNCY (MHz) Figure 17. Single -Carrier Output eak -to -Average Ratio Compression (ARC) Broadband out = 3 Watts Avg. G ps, OWR GAIN (db), DRAIN FFICINCY ACR (dbc) IRL, INUT RTURN LOSS (db) ARC (db) G ps, OWR GAIN (db) MHz 188 MHz 18 MHz 18 MHz MHz 185 MHz ACR 18 V DD =8Vdc,I DQ = 15 ma 16 Single--Carrier W--CDMA, 3.8 MHz Channel Bandwidth, Input Signal 3 AR = robability on CCDF 18 MHz G ps MHz 185 MHz out, OUTUT OWR (WATTS) AVG. Figure 18. Single -Carrier W -CDMA ower Gain, Drain fficiency and ACR versus Output ower, DRAIN FFICINCY ACR (dbc) V DD =8Vdc in =dbm I DQ = 15 ma Gain 5 GAIN (db) 18 5 IRL (db) IRL f, FRQUNCY (MHz) Figure 19. Broadband Frequency Response AGS16-1SR3 11

12 Table 1. Load ull erformance Maximum ower Tuning V DD =8Vdc,I DQ = 1 ma, ulsed CW, 1 sec(on), 1% Duty Cycle f (MHz) Z source Z in Max Output ower 1dB Z (1) load Gain (db) (dbm) (W) j j j j j j j j j AM/M f (MHz) Z source Z in Max Output ower 3dB Z () load Gain (db) (dbm) (W) j j j j j j j j j (1) Load impedance for optimum 1dB power. () Load impedance for optimum 3dB power. Z source = Measured impedance presented to the input of the device at the package reference plane. Z in = Impedance as measured from gate contact to ground. Z load = Measured impedance presented to the output of the device at the package reference plane. Table 11. Load ull erformance Maximum Drain fficiency Tuning V DD =8Vdc,I DQ = 1 ma, ulsed CW, 1 sec(on), 1% Duty Cycle f (MHz) Z source Z in Max Drain fficiency 1dB Z (1) load Gain (db) (dbm) (W) j j j j j j j j j AM/M AM/M f (MHz) Z source Z in Max Drain fficiency 3dB Z () load Gain (db) (dbm) (W) j j j j j j j j j (1) Load impedance for optimum 1dB efficiency. () Load impedance for optimum 3dB efficiency. Z source = Measured impedance presented to the input of the device at the package reference plane. Z in = Impedance as measured from gate contact to ground. Z load = Measured impedance presented to the output of the device at the package reference plane. AM/M Input Load ull Tuner and Test Circuit Device Under Test Output Load ull Tuner and Test Circuit Z source Z in Z load AGS16-1SR3 1

13 1dB - TYICAL LOAD ULL CONTOURS 18 MHz IMAGINARY IMAGINARY RAL Figure. 1dB Load ull Output ower Contours (dbm) RAL Figure 1. 1dB Load ull fficiency Contours IMAGINARY RAL Figure. 1dB Load ull Gain Contours (db) IMAGINARY RAL Figure 3. 1dB Load ull AM/M Contours NOT: = Maximum Output ower Gain Drain fficiency Linearity Output ower = Maximum Drain fficiency AGS16-1SR3 13

14 3dB - TYICAL LOAD ULL CONTOURS 18 MHz IMAGINARY RAL Figure. 3dB Load ull Output ower Contours (dbm) IMAGINARY RAL Figure 5. 3dB Load ull fficiency Contours IMAGINARY RAL Figure 6. 3dB Load ull Gain Contours (db) IMAGINARY RAL Figure 7. 3dB Load ull AM/M Contours Gain Drain fficiency Linearity Output ower NOT: = Maximum Output ower = Maximum Drain fficiency AGS16-1SR3 1

15 ACKAG DIMNSIONS AGS16-1SR3 15

16 AGS16-1SR3 16

17 RODUCT DOCUMNTATION, SOFTWAR AND TOOLS Refer to the following resources to aid your design process. Application Notes AN1955: Thermal Measurement Methodology of RF ower Amplifiers ngineering Bulletins B1: Using Data Sheet Impedances for RF LDMOS Devices Software RF High ower Model sp File Development Tools rinted Circuit Boards To Download Resources Specific to a Given art Number: 1. Go to Search by part number 3. Click part number link. Choose the desired resource from the drop down menu The following table summarizes revisions to this document. RVISION HISTORY Revision Date Description May 15 Initial Release of Data Sheet AGS16-1SR3 17

18 How to Reach Us: Home age: freescale.com Web Support: freescale.com/support Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. Freescale reserves the right to make changes without further notice to any products herein. Freescale makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters that may be provided in Freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including typicals, must be validated for each customer application by customer s technical experts. Freescale does not convey any license under its patent rights nor the rights of others. Freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/salestermsandconditions. Freescale and the Freescale logo are trademarks of, Reg. U.S. at. & Tm. Off. Airfast is a trademark of All other product or service names are the property of their respective owners. 15 AGS16-1SR3 Document Number: AGS16--1S 18 Rev., 5/15

RF Power GaN Transistor

Freescale Semiconductor Technical Data Document Number: A2G22S25--S Rev., 5/26 RF ower GaN Transistor This 48 W RF power GaN transistor is designed for cellular base station applications covering the frequency