RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

Transcription

1 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for W--CDMA and LTE base station applications with frequencies from 75 to 82 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. Typical Single--Carrier W--CDMA Performance: V DD =28Volts,I DQ = 2 ma, P out = 96 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 Probability on CCDF. Frequency G ps (db) D (%) Output PAR (db) ACPR (dbc) Document Number: MRF8P83H Rev. 1, 4/213 MRF8P83HR6 MRF8P83HSR MHz, 96 W AVG., 28 V SINGLE W -CDMA LATERAL N -CHANNEL RF POWER MOSFETs 79 MHz MHz MHz Capable of Handling 1:1 32 Vdc, 85 MHz, 5 Watts CW Output Power (3 db Input Overdrive from Rated P out ), Designed for Enhanced Ruggedness Typical P 1 db Compression Point 34 Watts CW Features 1% PAR Tested for Guaranteed Output Power Capability Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters Internally Matched for Ease of Use Integrated ESD Protection Greater Negative Gate--Source Voltage Range for Improved Class C Operation Designed for Digital Predistortion Error Correction Systems Optimized for Doherty Applications In Tape and Reel. R6 Suffix = 15 Units, 56 mm Tape Width, 13--inch Reel. NI H MRF8P83HR6 NI S MRF8P83HSR6 Table 1. Maximum Ratings RF ina /V GSA 3 1 RF outa /V DSA Rating Symbol Value Unit Drain--Source Voltage V DSS --.5, +7 Vdc Gate--Source Voltage V GS --6., +1 Vdc Operating Voltage V DD 32, + Vdc RF inb /V GSB 4 2 RF outb /V DSB Storage Temperature Range T stg --65 to +15 C Case Operating Temperature T C 15 C (Top View) Figure 1. Pin Connections Operating Junction Temperature (1,2) T J 225 C Table 2. Thermal Characteristics Characteristic Symbol Value (2,3) Unit Thermal Resistance, Junction to Case Case Temperature 8 C, 96 W CW, 28 Vdc, I DQ = 2 ma, 82 MHz Case Temperature 85 C, 3 W CW, 28 Vdc, I DQ = 2 ma, 82 MHz R JC C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to Select Documentation/Application Notes -- AN1955., 211, 213. All rights reserved. 1

2 Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22--A114) 2 Machine Model (per EIA/JESD22--A115) Charge Device Model (per JESD22--C11) Table 4. Electrical Characteristics (T A =25 C unless otherwise noted) Off Characteristics (1) Zero Gate Voltage Drain Leakage Current (V DS =7Vdc,V GS =Vdc) Class Characteristic Symbol Min Typ Max Unit I DSS 1 Adc A IV Zero Gate Voltage Drain Leakage Current (V DS =28Vdc,V GS =Vdc) Gate--Source Leakage Current (V GS =5Vdc,V DS =Vdc) On Characteristics Gate Threshold Voltage (1) (V DS =1Vdc,I D = 4 Adc) Gate Quiescent Voltage (V DD =28Vdc,I DQ = 2 ma, Measured in Functional Test) Drain--Source On--Voltage (1) (V GS =1Vdc,I D =3Adc) I DSS 1 Adc I GSS 1 Adc V GS(th) Vdc V GS(Q) Vdc V DS(on) Vdc Functional Tests (2) (In Freescale Test Fixture, 5 ohm system) V DD =28Vdc,I DQ = 2 ma, P out = 96 W Avg., f = 82 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 Probability on CCDF. ACPR measured in 3.84 MHz Channel 5 MHzOffset. Power Gain G ps db Drain Efficiency D % Output Peak--to--Average Probability on CCDF PAR db Adjacent Channel Power Ratio ACPR dbc Input Return Loss IRL db Typical Performance over Frequency (In Freescale Test Fixture, 5 ohm system) V DD =28Vdc,I DQ = 2 ma, P out =96WAvg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 Probability on CCDF. ACPR measured in 3.84 MHz Channel 5 MHzOffset. Frequency G ps (db) D (%) Output PAR (db) ACPR (dbc) 79 MHz MHz MHz IRL (db) 1. Each side of device measured separately. 2. Part internally matched both on input and output. (continued) 2

3 Table 4. Electrical Characteristics (T A =25 C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical Performances (In Freescale Test Fixture, 5 ohm system) V DD =28Vdc,I DQ = 2 ma, MHz Bandwidth P 1 db Compression Point, CW P1dB 34 W IMD 29 W PEP, P out where IMD Third Order Intermodulation 3 dbc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 db) VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) IMD sym 35 MHz VBW res 35 MHz Gain Flatness in 3 MHz P out =96WAvg. G F.5 db Gain Variation over Temperature (--3 C to+85 C) Output Power Variation over Temperature (--3 C to+85 C) G.185 db/ C P1dB.76 db/ C 3

4 B1 C23 R1 C11 C13 C27 C25 C29 C53 C57 C55 C1 C2 C3 C4 C5* C6* C7 C8 C9 C17 C18 C1 C15 C19 C21 C22 C2 C16 CUT OUT AREA C31 C33 C35 C36 C34 C32 C37 C39 C41 C42 C4 C38 C43 C44 C56 C45 C46 C47* C48* C49 C51 C5 MRF8P83H Rev. 2 C52 R2 C24 C12 C14 C26 C28 C3 C54 C58 B2 *C5, C6, C47, and C48 are mounted vertically. Figure 2. MRF8P83HR6(HSR6) Test Circuit Component Layout Table 5. MRF8P83HR6(HSR6) Test Circuit Component Designations and Values Part Description Part Number Manufacturer B1, B2 Short Ferrite Beads MPZ212S3AT TDK C1, C2, C39, C4, C41, C pf Chip Capacitors ATC1B2R1BT5XT ATC C3, C49, C5 1. pf Chip Capacitors ATC1B1RBT5XT ATC C4 12 pf Chip Capacitor ATC1B121JT5XT ATC C5, C6, C11, C12, C47, C48 39 pf Chip Capacitors ATC1B39JT5XT ATC C7, C8, C45, C pf Chip Capacitors ATC1B1R1BT5XT ATC C9, C1 4.7 F, 5 V Chip Capacitors C4532X5R1H475KT TDK C13, C14, C19, C2, C25, C26 1 pf Chip Capacitors ATC1B1JT5XT ATC C15, C16, C35, C pf Chip Capacitors ATC1B4R7CT5XT ATC C17, C pf Chip Capacitors ATC1B4R3CT5XT ATC C21, C pf Chip Capacitors ATC1B8R2CT5XT ATC C23, C24 22 F Electrolytic Capacitors UUD1V22MCL1GS Nichicon C27, C28 2 pf Chip Capacitors ATC1B2JT5XT ATC C29, C3 3 pf Chip Capacitors ATC1B3JT5XT ATC C31, C32 13 pf Chip Capacitors ATC1B13JT5XT ATC C33, C pf Chip Capacitors ATC1B7R5CT5XT ATC C37, C pf Chip Capacitors ATC1B1R5BT5XT ATC C43, C44.8 pf Chip Capacitors ATC1BR8BT5XT ATC C51, C52 2. pf Chip Capacitors ATC1B2RBT5XT ATC C53, C54, C55, C56 22 F, 5 V Chip Capacitors C575JF1H226ZT TDK C57, C58 47 F, 63 V Electrolytic Capacitors MCGPR63V477M13X26--RH Multicomp R1, R2 3 Chip Resistors CRCW1263RFNEA Vishay PCB.3, r =3.5 RF35A2 Taconic 4

5 TYPICAL CHARACTERISTICS G ps, POWER GAIN (db) D V DD =28Vdc,P out =96W(Avg.),I DQ = 2 ma Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 Probability on CCDF G ps IRL PARC ACPR f, FREQUENCY (MHz) Figure 3. Output Peak -to -Average Ratio Compression (PARC) Broadband P out = 96 Watts Avg D, DRAIN EFFICIENCY (%) ACPR (dbc) IRL, INPUT RETURN LOSS (db) PARC (db) IMD, INTERMODULATION DISTORTION (dbc) V DD =28Vdc,P out = 29 W (PEP), I DQ = 2 ma Two--Tone Measurements (f1 + f2)/2 = Center Frequency of 85 MHz IM5--L IM5--U IM7--U IM7--L IM3--U IM3--L TWO--TONE SPACING (MHz) Figure 4. Intermodulation Distortion Products versus Two -Tone Spacing G ps, POWER GAIN (db) OUTPUT COMPRESSION AT.1% PROBABILITY ON CCDF (db) V DD =28Vdc,I DQ = 2 ma, f = 85 MHz Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth --1dB=75.1W --2dB=11.5W --4 Input Signal PAR = 7.5 Probability on CCDF db = W 16 PARC ACPR D G ps D DRAIN EFFICIENCY (%) ACPR (dbc) P out, OUTPUT POWER (WATTS) Figure 5. Output Peak -to -Average Ratio Compression (PARC) versus Output Power 5

6 TYPICAL CHARACTERISTICS G ps, POWER GAIN (db) G ps 1 1 P out, OUTPUT POWER (WATTS) AVG. 4 Figure 6. Single -Carrier W -CDMA Power Gain, Drain Efficiency and ACPR versus Output Power 24 1 Gain 2 79 MHz 85 MHz 82 MHz V DD =28Vdc,I DQ = 2 ma, Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 Probability on CCDF 79 MHz 79 MHz 85 MHz 82 MHz 82 MHz 85 MHz D ACPR D, DRAIN EFFICIENCY (%) ACPR (dbc) GAIN (db) IRL --1 V DD =28Vdc P in =dbm --15 I DQ = 2 ma f, FREQUENCY (MHz) Figure 7. Broadband Frequency Response IRL (db) W -CDMA TEST SIGNAL 1 1 PROBABILITY (%) Input Signal W--CDMA. ACPR Measured in 3.84 MHz Channel 5MHzOffset. Input Signal PAR = 7.5 Probability on CCDF PEAK--TO--AVERAGE (db) Figure 8. CCDF W -CDMA IQ Magnitude Clipping, Single -Carrier Test Signal 1 (db) ACPR in 3.84 MHz Integrated BW 3.84 MHz Channel BW +ACPRin3.84MHz Integrated BW f, FREQUENCY (MHz) Figure 9. Single -Carrier W -CDMA Spectrum 6

7 V DD =28Vdc,I DQ = 2 ma, P out =96WAvg. f MHz Z source Z load j j j j j j j j j j j j j j j j j j.22 Z source = Test circuit impedance as measured from gate to ground, gate leads are tied together. Z load = Test circuit impedance as measured from drain to ground, drain leads are tied together. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 1. Series Equivalent Source and Load Impedance 7

8 ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS P out, OUTPUT POWER (dbm) V DD =28Vdc,I DQA = 1 ma, Pulsed CW, 1 sec(on), 1% Duty Cycle Ideal Actual MHz MHz MHz 79 MHz MHz 822 MHz P in, INPUT POWER (dbm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output 28 V f (MHz) P1dB P3dB Watts dbm Watts dbm f (MHz) Test Impedances per Compression Level Z source Z load 79 P1dB j j P1dB j j P1dB j j.74 Figure 11. Pulsed CW Output Power versus Input 28 V Note: Measurement made on a per side basis. 8

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13 PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following documents, tools and software to aid your design process. Application Notes AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins EB212: Using Data Sheet Impedances for RF LDMOS Devices Software Electromigration MTTF Calculator RF High Power Model.s2p File For Software and Tools, do a Part Number search at and select the Part Number link. Go to the Software & Tools tab on the part s Product Summary page to download the respective tool. The following table summarizes revisions to this document. REVISION HISTORY Revision Date Description Jan. 211 Initial Release of Data Sheet 1 Apr. 213 Changed operating frequency from MHz to MHz due to expanded device frequency capability resulting from additional test data, p. 1 Table 3, ESD Protection Characteristics, removed the word Minimum after the ESD class rating. ESD ratings are characterized during new product development but are not 1% tested during production. ESD ratings provided in the data sheet are intended to be used as a guideline when handling ESD sensitive devices, p. 2 Replaced Case Outline 98ASB16977C, Issue E with Issue F, p. 9, 1. Changed dimension C from to CC Replaced Case Outline 98ARB18247C, Issue F with Issue G, p. 11, 12. Changed dimension C from to CC Added minimum Z dimension R.. 13

14 How to Reach Us: Home Page: freescale.com Web Support: freescale.com/support Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. Freescale reserves the right to make changes without further notice to any products herein. Freescale makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters that may be provided in Freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including typicals, must be validated for each customer application by customer s technical experts. Freescale does not convey any license under its patent rights nor the rights of others. Freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/salestermsandconditions. Freescale and the Freescale logo are trademarks of, Reg. U.S. Pat. & Tm. Off. All other product or service names are the property of their respective owners. E 211, 213 Document Number: MRF8P83H Rev. 14 1, 4/213