RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET

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1 Freescale Semiconductor Technical Data Document Number: A2T2S6--2S Rev., 8/25 RF ower LDMOS Transistor N--Channel nhancement--mode Lateral MOSFT This 38 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2 to 27 MHz. 2 MHz Typical Single--Carrier W--CDMA erformance: V DD =28Vdc, I DQ = 6 ma, out = 38 W Avg., Input Signal AR = 9.9 robability on CCDF. Frequency G ps (db) (%) Output AR (db) ACR (dbc) IRL (db) 2 MHz MHz MHz MHz, 38 W AVG., 28 V AIRFAST RF OWR LDMOS TRANSISTOR Features Greater Negative Gate--Source Voltage Range for Improved Class C Operation Designed for Digital redistortion rror Correction Systems Optimized for Doherty Applications NI -78S -2L2L 4 VBW () RF in /V GS 3 RF out /V DS 2 VBW () (Top View) Figure. in Connections. Device cannot operate with V DD current supplied through pin 2 and pin 4., 25. All rights reserved.

2 Table. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage V DSS.5, +65 Vdc Gate--Source Voltage V GS 6., + Vdc Operating Voltage V DD 32, + Vdc Storage Temperature Range T stg 65 to +5 C Case Operating Temperature Range T C to +5 C Operating Junction Temperature Range (,2) T J to +225 C Table 2. Thermal Characteristics Characteristic Symbol Value (2,3) Unit Thermal Resistance, Junction to Case Case Temperature 73 C, 38 W CW, 28 Vdc, I DQ = 6 ma, 24 MHz Table 3. SD rotection Characteristics Test Methodology R JC.3 C/W Human Body Model (per JSD22--A4) 2 Machine Model (per IA/JSD22--A5) Charge Device Model (per JSD22--C) Table 4. lectrical Characteristics (T A =25 C unless otherwise noted) Class Characteristic Symbol Min Typ Max Unit B IV Off Characteristics Zero Gate Voltage Drain Leakage Current (V DS =65Vdc,V GS =Vdc) Zero Gate Voltage Drain Leakage Current (V DS =32Vdc,V GS =Vdc) Gate--Source Leakage Current (V GS =5Vdc,V DS =Vdc) On Characteristics Gate Threshold Voltage (V DS =Vdc,I D = 5 Adc) Gate Quiescent Voltage (V DD =28Vdc,I D = 6 madc, Measured in Functional Test) Drain--Source On--Voltage (V GS =Vdc,I D =.5Adc) I DSS Adc I DSS Adc I GSS Adc V GS(th) Vdc V GS(Q) Vdc V DS(on)..2.3 Vdc Functional Tests (4) (In Freescale Test Fixture, 5 ohm system) V DD =28Vdc,I DQ = 6 ma, out = 38 W Avg., f = 27 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal AR = 9.9 robability on CCDF. ACR measured in 3.84 MHz Channel 5 MHzOffset. ower Gain G ps db Drain fficiency % Output eak--to--average robability on CCDF AR db Adjacent Channel ower Ratio ACR 3..9 dbc Input Return Loss IRL 7 db. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at 3. Refer to AN955, Thermal Measurement Methodology of RF ower Amplifiers. Go to and search for AN art internally matched both on input and output. (continued) 2

3 Table 4. lectrical Characteristics (T A =25 C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Load Mismatch (In Freescale Test Fixture, 5 ohm system) I DQ = 6 ma, f = 24 MHz VSWR : at 32 Vdc, 9 W CW Output ower (3 db Input Overdrive from 4 W CW Rated ower) No Device Degradation Typical erformance (In Freescale Test Fixture, 5 ohm system) V DD =28Vdc,I DQ = 6 ma, 27 MHz Bandwidth db Compression oint, CW db 4 W AM/M (Maximum value measured at the 3dB compression point across the 27 MHz bandwidth) VBW Resonance oint (IMD Third Order Intermodulation Inflection oint) 6.4 VBW res 9 MHz Gain Flatness in 6 MHz out =38WAvg. G F.3 db Gain Variation over Temperature ( C to+85 C) Output ower Variation over Temperature ( C to+85 C) G. db/ C db.9 db/ C Table 5. Ordering Information Device Tape and Reel Information ackage A2T2S6--2SR3 R3 Suffix = 25 Units, 44 mm Tape Width, 3--inch Reel NI--78S--2L2L 3

4 V DD C5 V GG C9 C R C4 C C5 C7 C7 C4 C8 C6 CUT OUT ARA C8 C3 C2 R2 C3 C C2 V GG C6 VDD D65896 A2T2S6--2S Rev. Figure 2. Test Circuit Component Layout Table 6. Test Circuit Component Designations and Values art Description art Number Manufacturer C, C2, C3, C4, C5, C6 F Chip Capacitors C575X7S2A6M23KB TDK C7, C8, C, C, C4, C7 9. pf Chip Capacitors ATCB9RCT5XT ATC C9.8 pf Chip Capacitor ATCBR8BT5XT ATC C2.9 pf Chip Capacitor ATCBR9BT5XT ATC C3, C8. pf Chip Capacitors ATC6FRBT25XT ATC C5 47 F, 63 V lectrolytic Capacitor MCGR63V477M3X26-RH Multicomp C6. pf Chip Capacitor ATCBRBT5XT ATC R, R2 3, /4 W Chip Resistors RC26FR-73RL Yageo CB Rogers RO435B,.2, r =3.66 D65896 MTL 4

5 TYICAL CHARACTRISTICS V DD =28Vdc, out =38W(Avg.),I DQ = 6 ma Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Input Signal AR = 9.9 db D robability on CCDF G ps IRL ARC ACR f, FRQUNCY (MHz) Figure 3. Single -Carrier Output eak -to -Average Ratio Compression (ARC) Broadband out = 38 Watts Avg. G ps, OWR GAIN (db), DRAIN FFICINCY (%) ACR (dbc) IRL, INUT RTURN LOSS (dbc) ARC (db) IMD, INTRMODULATION DISTORTION (dbc) 5 6 V DD =28Vdc, out = W () I DQ = 6 ma, Two--Tone Measurements (f + f2)/2 = Center Frequency of 24 MHz IM5--L IM5--U IM7--L IM7--U 75 2 TWO--TON SACING (MHz) IM3--U IM3--L Figure 4. Intermodulation Distortion roducts versus Two -Tone Spacing G ps, OWR GAIN (db) OUTUT COMRSSION AT.% ROBABILITY ON CCDF (db) V DD =28Vdc,I DQ = 6 ma, f = 24 MHz Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth G ps db = 2 W db = 28 W ACR db = 37 W ARC 2 Input Signal AR = 9.9 robability on CCDF out, OUTUT OWR (WATTS) Figure 5. Output eak -to -Average Ratio Compression (ARC) versus Output ower RAIN FFICINCY (%) ACR (dbc) 5

6 TYICAL CHARACTRISTICS G ps, OWR GAIN (db) V DD =28Vdc,I DQ = 6 ma Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth, Input Signal AR = 9.9 robability on CCDF 2 MHz 27 MHz 24 MHz 27 MHz 24 MHz 2 MHz ACR 27 MHz 24 MHz 2 MHz G ps , DRAIN FFICINCY (%) 5 5 ACR (dbc) 2 out, OUTUT OWR (WATTS) AVG. Figure 6. Single -Carrier W -CDMA ower Gain, Drain fficiency and ACR versus Output ower Gain GAIN (db) 5 -- IRL (db) 2 9 IRL V DD =28Vdc in =dbm I DQ = 6 ma f, FRQUNCY (MHz) Figure 7. Broadband Frequency Response

7 Table 7. Load ull erformance Maximum ower Tuning V DD =28Vdc,I DQ = 793 ma, ulsed CW, sec(on), % Duty Cycle f (MHz) Z source Z in Max Output ower db Z () load Gain (db) (dbm) (W) j j j j j j j j j (%) AM/M f (MHz) Z source Z in Max Output ower 3dB Z (2) load Gain (db) (dbm) (W) j j j j j j j j j () Load impedance for optimum db power. (2) Load impedance for optimum 3dB power. Z source = Measured impedance presented to the input of the device at the package reference plane. Z in = Impedance as measured from gate contact to ground. Z load = Measured impedance presented to the output of the device at the package reference plane. Table 8. Load ull erformance Maximum Drain fficiency Tuning V DD =28Vdc,I DQ = 793 ma, ulsed CW, sec(on), % Duty Cycle Max Drain fficiency (%) AM/M db f (MHz) Z source Z in Z () load Gain (db) (dbm) (W) (%) AM/M j j j j j j j j j Max Drain fficiency 3dB f (MHz) Z source Z in Z (2) load Gain (db) (dbm) (W) (%) AM/M j j j j j j j j j () Load impedance for optimum db efficiency. (2) Load impedance for optimum 3dB efficiency. Z source = Measured impedance presented to the input of the device at the package reference plane. Z in = Impedance as measured from gate contact to ground. Z load = Measured impedance presented to the output of the device at the package reference plane. Input Load ull Tuner and Test Circuit Device Under Test Output Load ull Tuner and Test Circuit Z source Z in Z load 7

8 db TYICAL LOAD ULL CONTOURS 24 MHz IMAGINARY RAL Figure 8. db Load ull Output ower Contours (dbm) IMAGINARY RAL Figure 9. db Load ull fficiency Contours (%) IMAGINARY RAL Figure. db Load ull Gain Contours (db) IMAGINARY RAL Figure. db Load ull AM/M Contours Gain Drain fficiency Linearity Output ower NOT: = Maximum Output ower = Maximum Drain fficiency 8

9 IMAGINARY 3dB TYICAL LOAD ULL CONTOURS 24 MHz RAL RAL Figure 2. 3dB Load ull Output ower Contours (dbm) Figure 3. 3dB Load ull fficiency Contours (%) IMAGINARY IMAGINARY RAL Figure 4. 3dB Load ull Gain Contours (db) IMAGINARY RAL Figure 5. 3dB Load ull AM/M Contours Gain Drain fficiency Linearity Output ower NOT: = Maximum Output ower = Maximum Drain fficiency 9

10 ACKAG DIMNSIONS

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12 RODUCT DOCUMNTATION, SOFTWAR AND TOOLS Refer to the following resources to aid your design process. Application Notes AN955: Thermal Measurement Methodology of RF ower Amplifiers ngineering Bulletins B22: Using Data Sheet Impedances for RF LDMOS Devices Software lectromigration MTTF Calculator RF High ower Model s2p File Development Tools rinted Circuit Boards To Download Resources Specific to a Given art Number:. Go to 2. Search by part number 3. Click part number link 4. Choose the desired resource from the drop down menu The following table summarizes revisions to this document. RVISION HISTORY Revision Date Description Aug. 25 Initial Release of Data Sheet 2

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