RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET

Transcription

1 Technical Data Document Number: A2T21S260W12N Rev. 0, 1/2017 RF ower LDMOS Transistor N--Channel nhancement--mode Lateral MOSFT This 56 W RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2110 to 2200 MHz MHz Typical Single--Carrier W--CDMA erformance: V DD =28Vdc, I DQ = 1600 ma, out = 56 W Avg., Input Signal AR = % robability on CCDF MHz, 56 W AVG., 28 V AIRFAST RF OWR LDMOS TRANSISTOR Frequency G ps (db) D (%) Output AR (db) ACR (dbc) IRL (db) 2110 MHz MHz MHz MHz Features Designed for wide instantaneous bandwidth applications Greater negative gate--source voltage range for improved Class C operation Able to withstand extremely high output VSWR and broadband operating conditions Optimized for Doherty applications OM -880X -2L2L LASTIC 4 VBW (1) RF in /V GS 1 3 RF out /V DS 2 VBW (1) (Top View) Note: xposed backside of the package is the source terminal for the transistor. Figure 1. in Connections 1. Device can operate with V DD current supplied through pin 2 and pin NX B.V. 1

2 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage V DSS 0.5, +65 Vdc Gate--Source Voltage V GS.0, +10 Vdc Operating Voltage V DD 32, +0 Vdc Storage Temperature Range T stg 5 to +150 C Case Operating Temperature Range T C 0 to +125 C Operating Junction Temperature Range (1,2) T J 0 to +225 C Table 2. Thermal Characteristics Characteristic Symbol Value (2,3) Unit Thermal Resistance, Junction to Case Case Temperature 72 C, 56 W Avg., W--CDMA, 28 Vdc, I DQ = 1600 ma, 2155 MHz Table 3. SD rotection Characteristics Test Methodology R JC 0.24 C/W Human Body Model (per JSD22--A114) 2 Charge Device Model (per JSD22--C101) Table 4. Moisture Sensitivity Level Class Test Methodology Rating ackage eak Temperature Unit er JSD22--A113, IC/JDC J--STD C Table 5. lectrical Characteristics (T A =25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit C3 Off Characteristics Zero Gate Voltage Drain Leakage Current (V DS =65Vdc,V GS =0Vdc) Zero Gate Voltage Drain Leakage Current (V DS =32Vdc,V GS =0Vdc) Gate--Source Leakage Current (V GS =5Vdc,V DS =0Vdc) On Characteristics Gate Threshold Voltage (V DS =10Vdc,I D = 320 Adc) Gate Quiescent Voltage (V DD =28Vdc,I D = 1600 madc, Measured in Functional Test) Drain--Source On--Voltage (V GS =10Vdc,I D =3.2Adc) I DSS 10 Adc I DSS 5 Adc I GSS 1 Adc V GS(th) Vdc V GS(Q) Vdc V DS(on) Vdc 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at 3. Refer to AN1955, Thermal Measurement Methodology of RF ower Amplifiers. Go to and search for AN1955. (continued) 2

3 Table 5. lectrical Characteristics (T A =25 C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Functional Tests (1) (In NX Test Fixture, 50 ohm system) V DD =28Vdc,I DQ = 1600 ma, out = 56 W Avg., f = 2170 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal AR = % robability on CCDF. ACR measured in 3.84 MHz Channel 5 MHzOffset. ower Gain G ps db Drain fficiency D % Output eak--to--average 0.01% robability on CCDF AR db Adjacent Channel ower Ratio ACR dbc Input Return Loss IRL 5 8 db Load Mismatch (In NX Test Fixture, 50 ohm system) I DQ = 1600 ma, f = 2140 MHz, 12 sec(on), 10% Duty Cycle VSWR 10:1 at 32 Vdc, 390 W ulsed CW Output ower No Device Degradation (3 db Input Overdrive from 320 W ulsed CW Rated ower) Typical erformance (In NX Test Fixture, 50 ohm system) V DD =28Vdc,I DQ = 1600 ma, MHz Bandwidth 1 db Compression oint, ulsed CW 1dB 218 W AM/M (Maximum value measured at the 3dB compression point across the MHz frequency range.) VBW Resonance oint (IMD Third Order Intermodulation Inflection oint) 6 VBW res 100 MHz Gain Flatness in 90 MHz out =56WAvg. G F 1.2 db Gain Variation over Temperature (0 C to+85 C) Output ower Variation over Temperature (0 C to+85 C) G db/ C 1dB db/ C Table 6. Ordering Information Device Tape and Reel Information ackage R3 Suffix = 250 Units, 56 mm Tape Width, 13--inch Reel OM--880X--2L2L 1. art internally matched both on input and output. 3

4 V GG C6 C1 C10* R1 C3 C8* C13 C5 V DD C12* C15 CUT OUT ARA C18 C19 C14* C17* C16 C7 C11* C2 R2 C4 C9* D81895 *C8, C9, C10, C11, C12, C14 and C17 are mounted vertically. A2T21S260W12N Rev. 4 Figure 2. Test Circuit Component Layout Table 7. Test Circuit Component Designations and Values art Description art Number Manufacturer C1, C2 2.2 F Chip Capacitor C3227X7R2A225M TDK C3, C4 4.7 F Chip Capacitor C4532X7S2A475M230KB TDK C5 10 F Chip Capacitor C5750X7S2A106M230KB TDK C6, C7 470 F, 63 V lectrolytic Capacitor MCGR63V477M13X26--RH Multicomp C8, C9, C10, C11, C pf Chip Capacitor ATC100B6R2BT500XT ATC C13, C14 12 pf Chip Capacitor ATC800B120JT500XT ATC C pf Chip Capacitor ATC100B0R24BT500XT ATC C pf Chip Capacitor ATC800B0R4BT500XT ATC C17, C18, C pf Chip Capacitor ATC100B0R5BT500XT ATC R1, R2 2.2, 1/8 W Chip Resistor CRCW08052R20JNA Vishay CB Rogers RO4350B, 0.020, r =3.66 D81895 MTL 4

5 TYICAL CHARACTRISTICS MHz G ps, OWR GAIN (db) V DD =28Vdc, out =56W(Avg.),I DQ = 1600 ma Input Signal AR = % robability on CCDF D G ps ARC ACR Single--Carrier W--CDMA IRL MHz Channel Bandwidth f, FRQUNCY (MHz) Figure 3. Single -Carrier Output eak -to -Average Ratio Compression (ARC) Broadband out = 56 Watts Avg D, DRAIN FFICINCY (%) ACR (dbc) ARC (db) IRL, INUT RTURN LOSS (db) IMD, INTRMODULATION DISTORTION (dbc) V DD =28Vdc, out = 182 W (), I DQ = 1600 ma Two--Tone Measurements (f1 + f2)/2 = Center Frequency of 2140 MHz IM7--U IM5--U IM5--L IM3--U IM3--L IM7--L TWO--TON SACING (MHz) Figure 4. Intermodulation Distortion roducts versus Two -Tone Spacing G ps, OWR GAIN (db) OUTUT COMRSSION AT 0.01% ROBABILITY ON CCDF (db) 0 db = 30.9 W db = 42.3 W V DD =28Vdc,I DQ = 1600 ma, f = 2140 MHz Single--Carrier W--CDMA 3.84 MHz Channel Bandwidth D G ps db = 56.0 W ARC ACR D DRAIN FFICINCY (%) ACR (dbc) 16.8 Input Signal AR = % robability on CCDF out, OUTUT OWR (WATTS) Figure 5. Output eak -to -Average Ratio Compression (ARC) versus Output ower 5

6 TYICAL CHARACTRISTICS MHz G ps, OWR GAIN (db) V DD =28Vdc,I DQ = 1600 ma, Single--Carrier W--CDMA 3.84 MHz Channel Bandwidth 2200 MHz 2110 MHz 2140 MHz 2170 MHz ACR 2110 MHz 2200 MHz 2170 MHz 2140 MHz 2200 MHz 2170 MHz D 10 out, OUTUT OWR (WATTS) AVG MHz 2110 MHz Input Signal AR = % robability on CCDF Figure 6. Single -Carrier W -CDMA ower Gain, Drain fficiency and ACR versus Output ower 100 G ps D, DRAIN FFICINCY (%) ACR (dbc) V DD =28Vdc in =0dBm I DQ = 1600 ma Gain GAIN (db) 16 0 IRL (db) 15 IRL f, FRQUNCY (MHz) Figure 7. Broadband Frequency Response 6

7 Table 8. Load ull erformance Maximum ower Tuning V DD =28Vdc,I DQ = 1607 ma, ulsed CW, 10 sec(on), 10% Duty Cycle f (MHz) Z source Z in Max Output ower 1dB Z (1) load Gain (db) (dbm) (W) j j j j j j j j j j j j D (%) AM/M f (MHz) Z source Z in Max Output ower 3dB Z (2) load Gain (db) (dbm) (W) j j j j j j j j j j j j (1) Load impedance for optimum 1dB power. (2) Load impedance for optimum 3dB power. Z source = Measured impedance presented to the input of the device at the package reference plane. Z in = Impedance as measured from gate contact to ground. Z load = Measured impedance presented to the output of the device at the package reference plane. Table 9. Load ull erformance Maximum fficiency Tuning V DD =28Vdc,I DQ = 1607 ma, ulsed CW, 10 sec(on), 10% Duty Cycle f (MHz) Z source Z in Max Drain fficiency 1dB Z (1) load Gain (db) (dbm) (W) j j j j j j j j j j j j D (%) D (%) AM/M AM/M f (MHz) Z source Z in Max Drain fficiency 3dB Z (2) load Gain (db) (dbm) (W) j j j j j j j j j j j j (1) Load impedance for optimum 1dB efficiency. (2) Load impedance for optimum 3dB efficiency. Z source = Measured impedance presented to the input of the device at the package reference plane. Z in = Impedance as measured from gate contact to ground. Z load = Measured impedance presented to the output of the device at the package reference plane. D (%) AM/M Input Load ull Tuner and Test Circuit Device Under Test Output Load ull Tuner and Test Circuit Z source Z in Z load 7

8 1dB TYICAL LOAD ULL CONTOURS 2140 MHz IMAGINARY IMAGINARY RAL RAL Figure 8. 1dB Load ull Output ower Contours (dbm) Figure 9. 1dB Load ull fficiency Contours (%) RAL RAL Figure 10. 1dB Load ull Gain Contours (db) Figure 11. 1dB Load ull AM/M Contours IMAGINARY IMAGINARY 8 0 Gain Drain fficiency Linearity Output ower NOT: = Maximum Output ower = Maximum Drain fficiency 8

9 3dB TYICAL LOAD ULL CONTOURS 2140 MHz IMAGINARY RAL Figure 12. 3dB Load ull Output ower Contours (dbm) IMAGINARY RAL Figure 13. 3dB Load ull fficiency Contours (%) IMAGINARY IMAGINARY RAL Figure 14. 3dB Load ull Gain Contours (db) RAL Figure 15. 3dB Load ull AM/M Contours NOT: = Maximum Output ower Gain Drain fficiency Linearity Output ower = Maximum Drain fficiency 9

10 ACKAG DIMNSIONS 10

11 11

12 12

13 RODUCT DOCUMNTATION, SOFTWAR AND TOOLS Refer to the following resources to aid your design process. Application Notes AN1907: Solder Reflow Attach Method for High ower RF Devices in Over--Molded lastic ackages AN1955: Thermal Measurement Methodology of RF ower Amplifiers ngineering Bulletins B212: Using Data Sheet Impedances for RF LDMOS Devices Software lectromigration MTTF Calculator RF High ower Model.s2p File Development Tools rinted Circuit Boards To Download Resources Specific to a Given art Number: 1. Go to 2. Search by part number 3. Click part number link 4. Choose the desired resource from the drop down menu The following table summarizes revisions to this document. RVISION HISTORY Revision Date Description 0 Jan Initial release of data sheet 13

14 How to Reach Us: Home age: nxp.com Web Support: nxp.com/support Information in this document is provided solely to enable system and software implementers to use NX products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. NX reserves the right to make changes without further notice to any products herein. NX makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does NX assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters that may be provided in NX data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including typicals, must be validated for each customer application by customer s technical experts. NX does not convey any license under its patent rights nor the rights of others. NX sells products pursuant to standard terms and conditions of sale, which can be found at the following address: nxp.com/salestermsandconditions. NX, the NX logo, Freescale, the Freescale logo, and Airfast are trademarks of NX B.V. All other product or service names are the property of their respective owners NX B.V. Document Number: A2T21S260W12N 14 Rev. 0, 1/2017