RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET

Transcription

1 Technical Data Document Number: AFT7SN Rev. 5, /17 RF ower LDMOS Transistor N--Channel nhancement--mode Lateral MOSFT This. dbm RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 7 to 37 MHz. Typical Single--Carrier W--CDMA erformance: V DD =Vdc, I DQ =5mA, out =. dbm Avg., Input Signal AR = 9.9 robability on CCDF. (1) 7 MHz Frequency Output AR ACR (dbc) 7-37 MHz,. dbm AVG., V AIRFAST RF OWR LDMOS TRANSISTOR 7 MHz MHz MHz Typical Single--Carrier W--CDMA erformance: V DD =Vdc, I DQ =7mA, out =. dbm Avg., Input Signal AR = 9.9 robability on CCDF. (1) MHz LD -1.5W LASTIC Frequency Output AR ACR (dbc) 1 MHz MHz MHz RF in /V GS RF out /V DS 3 MHz Frequency Output AR ACR (dbc) 3 MHz MHz MHz MHz (Top View) Note: The center pad on the backside of the package is the source terminal for the transistor. Figure 1. in Connections Frequency Output AR ACR (dbc) 5 MHz MHz MHz MHz Frequency Output AR ACR (dbc) 3 MHz MHz MHz All data measured in fixture with device soldered to heatsink. Features Greater negative gate--source voltage range for improved Class C operation Designed for digital predistortion error correction systems Universal broadband driver 13 15, 17 NX B.V. 1

2 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage V DSS --.5, +5 Vdc Gate--Source Voltage V GS --., + Vdc Operating Voltage V DD 3, + Vdc Storage Temperature Range T stg --5 to +15 C Case Operating Temperature Range T C -- to +15 C Operating Junction Temperature Range (1,) T J -- to +15 C Table. Thermal Characteristics Characteristic Symbol Value (,3) Unit Thermal Resistance, Junction to Case Case Temperature 7 C,.7 W CW, Vdc, I DQ = 7 ma, MHz Table 3. SD rotection Characteristics Human Body Model (per JSD--A1) Machine Model (per IA/JSD--A115) Test Methodology Charge Device Model (per JSD--C1) Table. Moisture Sensitivity Level R JC 3. C/W Class Test Methodology Rating ackage eak Temperature Unit er JSD--A113, IC/JDC J--STD-- 3 C Table 5. lectrical Characteristics (T A =5 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit 1B A III Off Characteristics Zero Gate Voltage Drain Leakage Current (V DS =5Vdc,V GS =Vdc) Zero Gate Voltage Drain Leakage Current (V DS =Vdc,V GS =Vdc) Gate--Source Leakage Current (V GS =5Vdc,V DS =Vdc) On Characteristics Gate Threshold Voltage (V DS =Vdc,I D =7.7 Adc) Gate Quiescent Voltage (V DD =Vdc,I D = 7 madc, Measured in Functional Test) Drain--Source On--Voltage (V GS =Vdc,I D =77mAdc) I DSS Adc I DSS 1 Adc I GSS 1 Adc V GS(th) Vdc V GS(Q) Vdc V DS(on).1..3 Vdc 1. Continuous use at maximum temperature will affect MTTF.. MTTF calculator available at 3. Refer to AN1955, Thermal Measurement Methodology of RF ower Amplifiers. Go to and search for AN1955. (continued)

3 Table 5. lectrical Characteristics (T A =5 C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Functional Tests (In NX Test Fixture, 5 ohm system) V DD =Vdc,I DQ =7mA, out =. dbm Avg., f = 17 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal AR = 9.9 robability on CCDF. ACR measured in 3. MHz Channel 5 MHzOffset. ower Gain db Drain fficiency 17.. % Adjacent Channel ower Ratio ACR dbc Input Return Loss db Load Mismatch (In NX Test Fixture, 5 ohm system) I DQ = 7 ma, f = MHz VSWR 5:1 at 3 Vdc,.1 W CW Output ower (3 db Input Overdrive from W CW Rated ower) No Device Degradation Typical erformance (In NX Test Fixture, 5 ohm system) V DD =Vdc,I DQ = 7 ma, MHz Bandwidth 1 db Compression oint, CW 1dB W AM/M (Maximum value measured at the 3dB compression point across the MHz frequency range.) VBW Resonance oint (IMD Third Order Intermodulation Inflection oint) --. VBW res MHz Gain Flatness in MHz out =. dbm Avg. G F.53 db Gain Variation over Temperature (--3 C to+5 C) Output ower Variation over Temperature (--3 C to+5 C) G. db/ C 1dB. db/ C Table. Ordering Information Device Tape and Reel Information ackage T1 Suffix = Units, mm Tape Width, 7--inch Reel LD--1.5W 3

4 V GG V DD C7 C C13 C C C1* R1 Q1 C3 C5* C C9 C D55 C C11 AFT7SN Rev. MHz V DD *C1 and C5 are mounted vertically. NOT: All data measured in fixture with device soldered to heatsink. Figure. Test Circuit Component Layout 1-17 MHz Table 7. Test Circuit Component Designations and Values 1-17 MHz art Description art Number Manufacturer C1, C5, C, C, C9 9.1 pf Chip Capacitors ATCB39R1JT5XT ATC C 1. pf Chip Capacitor ATCB1RJT5XT ATC C3.7 pf Chip Capacitor ATCBR7JT5XT ATC C 1.5 pf Chip Capacitor ATCB1R5JT5XT ATC C7, C, C11, C, C13 F Chip Capacitors GRM3R1HKAL Murata Q1 RF ower LDMOS Transistor AFT7SN NX R1.75, 1/ W Chip Resistor CRCW1R75FNA Vishay CB Rogers RO35B,., r =3. D55 MTL

5 TYICAL CHARACTRISTICS 1-17 MHz, OWR GAIN V DD =Vdc, out =. dbm (Avg.) I DQ = 7 ma, Single--Carrier W--CDMA 3. MHz Channel Bandwidth Input Signal AR = 9.9 robability on CCDF f, FRQUNCY (MHz) ACR ARC , DRAIN FFICINCY Figure 3. Single -Carrier Output eak -to -Average Ratio Compression (ARC) Broadband out =. dbm Avg. --5 ACR (dbc) , INUT RTURN LOSS ARC IMD, INTRMODULATION DISTORTION (dbc) IM5--L IM5--U IM7--L IM3--U IM3--L IM7--U -- V DD =Vdc, out = 5. W (), I DQ =7mA Two--Tone Measurements, (f1 + f)/ = Center Frequency of MHz TWO--TON SACING (MHz) Figure. Intermodulation Distortion roducts versus Two -Tone Spacing, OWR GAIN OUTUT COMRSSION AT.1% ROBABILITY ON CCDF V DD =Vdc,I DQ = 7 ma, f = MHz Single--Carrier W--CDMA, 3. MHz Channel Bandwidth, Input Signal AR = 9.9 robability on CCDF --1 db =.5 W --db=1.1w ACR --3 db = 1.55 W RAIN FFICINCY ACR (dbc) 1 ARC out, OUTUT OWR (WATTS) Figure 5. Output eak -to -Average Ratio Compression (ARC) versus Output ower --5 5

6 TYICAL CHARACTRISTICS 1-17 MHz 3 V DD =Vdc,I DQ = 7 ma, Single--Carrier W--CDMA 3. MHz Channel Bandwidth MHz , OWR GAIN MHz 17 MHz Input Signal AR = 9.9 robability on CCDF ACR 17 MHz MHz 1 MHz 1 out, OUTUT OWR (WATTS) AVG. Figure. Single -Carrier W -CDMA ower Gain, Drain fficiency and ACR versus Output ower 3, DRAIN FFICINCY ACR (dbc) Gain 35 5 GAIN 1 V DD =Vdc in =dbm I DQ =7mA f, FRQUNCY (MHz) Figure 7. Broadband Frequency Response

7 Table. Load ull erformance Maximum ower Tuning V DD =Vdc,I DQ =7mA, ulsed CW, sec(on), % Duty Cycle f (MHz) Z source Z in Max Output ower 1dB Z (1) load Gain (dbm) (W) j j1.. + j j j j j j j AM/M f (MHz) Z source Z in Max Output ower 3dB Z () load Gain (dbm) (W) j j j j j j j j j (1) Load impedance for optimum 1dB power. () Load impedance for optimum 3dB power. Z source = Measured impedance presented to the input of the device at the package reference plane. Z in = Impedance as measured from gate contact to ground. Z load = Measured impedance presented to the output of the device at the package reference plane. AM/M Table 9. Load ull erformance Maximum Drain fficiency Tuning V DD =Vdc,I DQ =7mA, ulsed CW, sec(on), % Duty Cycle f (MHz) Z source Z in Max Drain fficiency 1dB Z (1) load Gain (dbm) (W) j j j j j j j j j AM/M f (MHz) Z source Z in Max Drain fficiency 3dB Z () load Gain (dbm) (W) j j j j j j j j j (1) Load impedance for optimum 1dB efficiency. () Load impedance for optimum 3dB efficiency. Z source = Measured impedance presented to the input of the device at the package reference plane. Z in = Impedance as measured from gate contact to ground. Z load = Measured impedance presented to the output of the device at the package reference plane. AM/M Input Load ull Tuner and Test Circuit Device Under Test Output Load ull Tuner and Test Circuit Z source Z in Z load 7

8 1dB - TYICAL LOAD ULL CONTOURS MHz IMAGINARY RAL RAL Figure. 1dB Load ull Output ower Contours (dbm) Figure 9. 1dB Load ull fficiency Contours IMAGINARY IMAGINARY IMAGINARY RAL Figure. 1dB Load ull Gain Contours RAL Figure 11. 1dB Load ull AM/M Contours NOT: = Maximum Output ower Gain Drain fficiency Linearity Output ower = Maximum Drain fficiency

9 3dB - TYICAL LOAD ULL CONTOURS MHz IMAGINARY RAL Figure. 3dB Load ull Output ower Contours (dbm) IMAGINARY RAL Figure 13. 3dB Load ull fficiency Contours IMAGINARY IMAGINARY RAL Figure. 3dB Load ull Gain Contours RAL Figure 15. 3dB Load ull AM/M Contours NOT: = Maximum Output ower Gain = Maximum Drain fficiency Drain fficiency Linearity Output ower 9

10 5-7 MHz V GG V DD C C3 C C5 C9 C7 C C1 R1 Q1 C13 C15 C D531 C C11 C C AFT7SN Rev. 3MHz/5MHz V DD NOT: All data measured in fixture with device soldered to heatsink. Figure. Test Circuit Component Layout 5-7 MHz Table. Test Circuit Component Designations and Values 5-7 MHz art Description art Number Manufacturer C1. pf Chip Capacitor GQM195CRCBD Murata C 7.5 pf Chip Capacitor GQM195C7R5CBD Murata C3. pf Chip Capacitor ATCBRBT5XT ATC C, C7, C, C9, C, C11, C F, Chip Capacitors GRM31HKAL Murata C5, C 7.5 pf Chip Capacitors ATCB7R5BT5XT ATC C13 1. pf Chip Capacitor ATCB1RBT5XT ATC C F, 5 V lectrolytic Capacitor 7CKS5M Illinois Capacitor C15.7 pf Chip Capacitor ATCBR7BT5XT ATC Q1 RF ower LDMOS Transistor AFT7SN NX R1.75, 1/ W Chip Resistor CRCW1R75FNA Vishay CB Rogers RO35B,., r =3. D531 MTL

11 TYICAL CHARACTRISTICS 5-7 MHz, OWR GAIN ARC ACR f, FRQUNCY (MHz) Figure 17. Single -Carrier Output eak -to -Average Ratio Compression (ARC) Broadband out =. dbm Avg. V DD =Vdc, out =. dbm (Avg.) I DQ = 7 ma, Single--Carrier W--CDMA 3. MHz Channel Bandwidth Input Signal AR = 9.9 robability on CCDF , DRAIN FFICINCY ACR (dbc) , INUT RTURN LOSS ARC V DD =Vdc,I DQ = 7 ma, Single--Carrier W--CDMA 3. MHz Channel Bandwidth, Input Signal AR = 9.9 robability on CCDF , OWR GAIN 1 7 MHz ACR MHz 7 MHz 5 MHz MHz 7 MHz 3, DRAIN FFICINCY ACR (dbc).3 1 out, OUTUT OWR (WATTS) AVG. Figure 1. Single -Carrier W -CDMA ower Gain, Drain fficiency and ACR versus Output ower --7 Gain GAIN V DD =Vdc in =dbm -- I DQ =7mA f, FRQUNCY (MHz) Figure 19. Broadband Frequency Response 11

12 3 - MHz V GG V DD C C3 C C9 C7 C C5 C1 R1 Q1 C17 C13 C15 C C C D531 C C11 C AFT7SN Rev. 3MHz/5MHz V DD NOT: All data measured in fixture with device soldered to heatsink. Figure. Test Circuit Component Layout 3 - MHz Table 11. Test Circuit Component Designations and Values 3 - MHz art Description art Number Manufacturer C1. pf Chip Capacitor GQM195CRCBD Murata C 7.5 pf Chip Capacitor GQM195C7R5CBD Murata C3. pf Chip Capacitor ATCBRBT5XT ATC C, C7, C, C9, C, C11, C F Chip Capacitors GRM31HKAL Murata C5, C 7.5 pf Chip Capacitors ATCB7R5BT5XT ATC C13 1. pf Chip Capacitor ATCB1RBT5XT ATC C F, 5 V lectrolytic Capacitor 7CKS5M Illinois Capacitor C15. pf Chip Capacitor ATCBRCT5XT ATC C 1.5 pf Chip Capacitor ATCB1R5CT5XT ATC C17 1. pf Chip Capacitor ATCB1RCT5XT ATC Q1 RF ower LDMOS Transistor AFT7SN NX R1.75, 1/ W Chip Resistor CRCW1R75FNA Vishay CB Rogers RO35B,., r =3. D531 MTL

13 TYICAL CHARACTRISTICS 3 - MHz, OWR GAIN V DD =Vdc, out =. dbm (Avg.) I DQ = 7 ma, Single--Carrier W--CDMA ACR f, FRQUNCY (MHz) Figure 1. Single -Carrier Output eak -to -Average Ratio Compression (ARC) Broadband out =. dbm Avg. 3. MHz Channel Bandwidth Input Signal AR = 9.9 robability on CCDF ARC , DRAIN FFICINCY ACR (dbc) , INUT RTURN LOSS ARC, OWR GAIN V DD =Vdc,I DQ = 7 ma, Single--Carrier W--CDMA, 3. MHz Channel Bandwidth ACR 3 MHz Input Signal = 9.9 robability on CCDF MHz 35 MHz MHz out, OUTUT OWR (WATTS) AVG. MHz 35 MHz MHz Figure. Single -Carrier W -CDMA ower Gain, Drain fficiency and ACR versus Output ower 5 3, DRAIN FFICINCY ACR (dbc) Gain --5 GAIN V DD =Vdc in =dbm I DQ =7mA f, FRQUNCY (MHz) Figure 3. Broadband Frequency Response

14 Table. Load ull erformance Maximum ower Tuning V DD =Vdc,I DQ =7mA, ulsed CW, sec(on), % Duty Cycle f (MHz) Z source Z in Max Output ower 1dB Z (1) load Gain (dbm) (W) j j j j j j j j j j j j j j j f (MHz) Z source Z in Max Output ower 3dB Z () load Gain (dbm) (W) j j j j j j j j j j j j j j j (1) Load impedance for optimum 1dB power. () Load impedance for optimum 3dB power. Z source = Measured impedance presented to the input of the device at the package reference plane. Z in = Impedance as measured from gate contact to ground. Z load = Measured impedance presented to the output of the device at the package reference plane. Table 13. Load ull erformance Maximum Drain fficiency Tuning V DD =Vdc,I DQ =7mA, ulsed CW, sec(on), % Duty Cycle f (MHz) Z source Z in Max Drain fficiency 1dB Z (1) load Gain (dbm) (W) j j j j j j j j j j j j j j1.. + j f (MHz) Z source Z in Max Drain fficiency 3dB Z () load Gain (dbm) (W) j j j j j j j j j j j j j j j (1) Load impedance for optimum 1dB efficiency. () Load impedance for optimum 3dB efficiency. Z source = Measured impedance presented to the input of the device at the package reference plane. Z in = Impedance as measured from gate contact to ground. Z load = Measured impedance presented to the output of the device at the package reference plane. AM/M AM/M AM/M AM/M Input Load ull Tuner and Test Circuit Device Under Test Output Load ull Tuner and Test Circuit Z source Z in Z load

15 1dB - TYICAL LOAD ULL CONTOURS 5 MHz IMAGINARY IMAGINARY RAL Figure. 1dB Load ull Output ower Contours (dbm) RAL Figure 5. 1dB Load ull fficiency Contours IMAGINARY RAL Figure. 1dB Load ull Gain Contours IMAGINARY RAL -- Figure 7. 1dB Load ull AM/M Contours NOT: = Maximum Output ower Gain = Maximum Drain fficiency Drain fficiency Linearity Output ower 15

16 IMAGINARY 3dB - TYICAL LOAD ULL CONTOURS 5 MHz RAL RAL Figure. 3dB Load ull Output ower Contours (dbm) Figure 9. 3dB Load ull fficiency Contours IMAGINARY IMAGINARY RAL Figure 3. 3dB Load ull Gain Contours IMAGINARY RAL Figure 31. 3dB Load ull AM/M Contours -- Gain Drain fficiency Linearity Output ower NOT: = Maximum Output ower = Maximum Drain fficiency

17 TYICAL CHARACTRISTICS 3-3 MHz, OWR GAIN 19.5 V DD =Vdc, out =. dbm (Avg.) I DQ = 7 ma, Single--Carrier W--CDMA MHz Channel Bandwidth 1.5 Input Signal AR = 9.9 robability on CCDF ARC ACR f, FRQUNCY (MHz), DRAIN FFICINCY Figure 3. Single -Carrier Output eak -to -Average Ratio Compression (ARC) Broadband out =. dbm Avg. ACR (dbc) , INUT RTURN LOSS ARC, OWR GAIN V DD =Vdc,I DQ = 7 ma, Single--Carrier W--CDMA 3. MHz Channel Bandwidth ACR MHz 3 MHz 3 MHz 3 3 MHz 35 MHz 3 MHz 3 MHz 35 MHz 3 MHz Input Signal AR = 9.9 robability on CCDF.1 1 out, OUTUT OWR (WATTS) AVG. Figure 33. Single -Carrier W -CDMA ower Gain, Drain fficiency and ACR versus Output ower, DRAIN FFICINCY ACR (dbc) 1 1 V DD =Vdc in =dbm I DQ =7mA Gain 5 GAIN f, FRQUNCY (MHz) Figure 3. Broadband Frequency Response 17

18 7-7 MHz V GG C15 C V DD C11 C C C5 C1* R1 C7* C C9* C C3 C Q1 D59 C C13 C C17 AFT7SN Rev. 1 MHz V DD *C1, C7 and C9 are mounted vertically. NOT: All data measured in fixture with device soldered to heatsink. Figure 35. Test Circuit Component Layout 7-7 MHz Table. Test Circuit Component Designations and Values 7-7 MHz art Description art Number Manufacturer C5, C, C11, C, C13 33 pf Chip Capacitors ATCB33JT5XT ATC C.7 pf Chip Capacitor ATCBR7JT5XT ATC C3. pf Chip Capacitor ATCBRJT5XT ATC C, C7 3.9 pf Chip Capacitors ATCB3R9JT5XT ATC C1, C9 pf Chip Capacitors ATCBJT5XT ATC C.5 pf Chip Capacitor ATCBR5JT5XT ATC C, C, C15, C, C17 F Chip Capacitors GRM3R1HKAL Murata Q1 RF ower LDMOS Transistor AFT7SN NX R1, 1/ W Chip Resistor CRCW1RJNA Vishay CB Rogers RO35B,., r =3. D59 MTL 1

19 TYICAL CHARACTRISTICS 7-7 MHz 5... V DD =Vdc, out =. dbm (Avg.) I DQ = 5 ma, Single--Carrier W--CDMA MHz Channel Bandwidth 1 Input Signal AR = robability on CCDF ARC ACR f, FRQUNCY (MHz) Figure 3. Single -Carrier Output eak -to -Average Ratio Compression (ARC) Broadband out =. dbm Avg., OWR GAIN, DRAIN FFICINCY ACR (dbc), INUT RTURN LOSS ARC, OWR GAIN V DD =Vdc,I DQ = 5 ma, Single--Carrier W--CDMA, 3. MHz Channel Bandwidth, Input Signal AR = 9.9 robability on CCDF 1. 7 MHz 7 MHz 7 MHz 7 MHz 1 7 MHz 7 MHz ACR out, OUTUT OWR (WATTS) AVG. Figure 37. Single -Carrier W -CDMA ower Gain, Drain fficiency and ACR versus Output ower 7 MHz 7 MHz 7 MHz 5 3, DRAIN FFICINCY ACR (dbc) 7 5 V DD =Vdc in =dbm I DQ =7mA Gain GAIN f, FRQUNCY (MHz) Figure 3. Broadband Frequency Response 19

20 Solder pad with thermal via structure. All dimensions in mm Figure 39. CB ad Layout for LD -1.5W AS N( )B YYWW Figure. roduct Marking

21 ACKAG DIMNSIONS 1

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24 RODUCT DOCUMNTATION, SOFTWAR AND TOOLS Refer to the following resources to aid your design process. Application Notes AN1955: Thermal Measurement Methodology of RF ower Amplifiers Software lectromigration MTTF Calculator RF High ower Model.sp File Development Tools rinted Circuit Boards To Download Resources Specific to a Given art Number: 1. Go to Search by part number 3. Click part number link. Choose the desired resource from the drop down menu RVISION HISTORY The following table summarizes revisions to this document. Revision Date Description Oct. 13 Initial Release of Data Sheet 1 Nov. 13 Table 5, Functional Tests table: gain min and max limits improved and typical values updated to reflect large volume production data, p. 3 Tables, 7,, 9, Test Circuit Component Designations and Values: updated CB description to reflect most current board specifications from Rogers, pp.,,, 17 Sept. Tape and Reel information: corrected tape width information from 13--inch reel to 7--inch reel to reflect actual reel size, p. 1 Changed operating frequency from 7 7 MHz to 7 3 MHz due to expanded device frequency capability resulting from additional test data, p. 1 3 Nov. Added 3--3 MHz performance information as follows: -- Typical Frequency Band table, p Fig. 3, Single--Carrier Output eak--to--average Ratio Compression (ARC) Broadband out =. dbm Avg., p Fig. 33, Single--Carrier W--CDMA ower Gain, Drain fficiency and ACR versus Output ower, p Fig. 3, Broadband Frequency Response, p. 17 Dec. 15 Table 1, Maximum Ratings: corrected operating junction temperature range upper limit, p. Table 5, lectrical Characteristics, On Characteristics V DS(on) : updated I D unit of measure to madc to reflect actual unit of measure, p. Added Ordering Information Table, p. 3 5 Dec. 17 Changed operating frequency from 7 3 MHz to 7 37 MHz due to expanded device frequency capability resulting from additional test data, p. 1

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