RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs

Transcription

1 Freescale Semiconductor Technical Data Document Number: AFT21H35W3S Rev., 9/213 RF ower LDMOS Transistors N--Channel nhancement--mode Lateral MOSFTs These 63 watt asymmetrical Doherty RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 211 to 217 MHz. Typical Doherty Single--Carrier W--CDMA erformance: V DD =28Volts, I DQA = 75 ma, V GSB =.7Vdc, out = 63 Watts Avg., Input Signal AR = 9.9 robability on CCDF. Frequency G ps (db) (%) Output AR (db) ACR (dbc) AFT21H35W3SR6 AFT21H35W4GSR MHz, 63 W AVG., 28 V AIRFAST RF OWR LDMOS TRANSISTORS 211 MHz MHz MHz NI -123S -4S AFT21H35W3SR6 Features Advanced High erformance In--ackage Doherty esigned for Wide Instantaneous Bandwidth Applications Greater Negative Gate--Source Voltage Range for Improved Class C Operation esigned for Digital redistortion rror Correction Systems In Tape and Reel. R6 Suffix = 15 Units, 56 mm Tape Width, 13--inch Reel. NI -123GS -4L AFT21H35W4GSR6 RF ina /V GSA Carrier 3 1 (1) RF outa /V DSA RF inb /V GSB 4 2 RF outb /V DSB eaking (Top View) Figure 1. in Connections 1. in connections 1 and 2 are DC coupled and RF independent., 213. All rights reserved. 1

2 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage V DSS --.5, +65 Vdc Gate--Source Voltage V GS., +1 Vdc Operating Voltage V DD 32, + Vdc Storage Temperature Range T stg 5 to +15 C Case Operating Temperature Range T C to +125 C Operating Junction Temperature Range (1,2) T J to +225 C CW T C =25 C Derate above 25 C Table 2. Thermal Characteristics CW W W/ C Characteristic Symbol Value (2,3) Unit Thermal Resistance, Junction to Case Case Temperature 79 C, 63 W CW, 28 Vdc, I DQA = 75 ma, V GSB =.7 Vdc, 214 MHz Table 3. SD rotection Characteristics Test Methodology Human Body Model (per JSD22--A114) 2 Machine Model (per IA/JSD22--A115) Charge Device Model (per JSD22--C11) Table 4. lectrical Characteristics (T A =25 C unless otherwise noted) Off Characteristics (4) Zero Gate Voltage Drain Leakage Current (V DS =65Vdc,V GS =Vdc) R JC.49 C/W Class Characteristic Symbol Min Typ Max Unit I DSS 1 Adc B IV Zero Gate Voltage Drain Leakage Current (V DS =28Vdc,V GS =Vdc) Gate--Source Leakage Current (V GS =5Vdc,V DS =Vdc) On Characteristics - Side A (Carrier) Gate Threshold Voltage (5) (V DS =6Vdc,I D = 146 Adc) Gate Quiescent Voltage (5) (V DD =28Vdc,I DA = 75 madc, Measured in Functional Test) Drain--Source On--Voltage (4) (V GS =1Vdc,I D =4.Adc) On Characteristics - Side B (eaking) Gate Threshold Voltage (5) (V DS =6Vdc,I D = 33 Adc) Drain--Source On--Voltage (4) (V GS =1Vdc,I D =4.Adc) I DSS 5 Adc I GSS 1 Adc V GS(th) Vdc V GS(Q) Vdc V DS(on) Vdc V GS(th) Vdc V DS(on) Vdc 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF ower Amplifiers. Go to Select Documentation/Application Notes -- AN Side A and Side B are tied together for these measurements. 5. ach side of device measured separately.. (continued) 2

3 Table 4. lectrical Characteristics (T A =25 C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Functional Tests (1,2,3) (In Freescale Doherty Test Fixture, 5 ohm system) V DD =28Vdc,I DQA = 75 ma, V GSB =.7Vdc, out =63WAvg., f = 211 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal AR = 9.9 robability on CCDF. ACR measured in 3.84 MHz Channel 5 MHzOffset. ower Gain G ps db Drain fficiency % Output eak--to--average robability on CCDF AR db Adjacent Channel ower Ratio ACR dbc Load Mismatch (In Freescale Test Fixture, 5 ohm system) I DQA = 75 ma, f = 214 MHz VSWR 1:1 at 32 Vdc, 195 W CW Output ower (3 db Input Overdrive from 11 W CW Rated ower) No Device Degradation Typical erformances (3) (In Freescale Doherty Test Fixture, 5 ohm system) V DD =28Vdc,I DQA = 75 ma, V GSB =.7Vdc, MHz Bandwidth 1 db Compression oint, CW 1dB 11 W 3 db Compression oint (4) 3dB 4 W AM/M (Maximum value measured at the 3dB compression point across the 211 to 217 MHz frequency range) VBW Resonance oint (IMD Third Order Intermodulation Inflection oint) 4 VBW res 14 MHz Gain Flatness in 6 MHz out =63WAvg. G F.4 db Gain Variation over Temperature ( C to+85 C) Output ower Variation over Temperature ( C to+85 C) G.1 db/ C 1dB.3 db/ C 1. V DDA and V DDB must be tied together and powered by a single DC power supply. 2. art internally matched both on input and output. 3. Measurements made with device in an asymmetrical Doherty configuration. 4. 3dB = avg + 7. db where avg is the average output power measured using an unclipped W--CDMA single--carrier input signal where output AR is compressed to 7. probability on CCDF. 3

4 V GGA R1 V GGB R2 R3 C8 C7 C1 C2 C5 C6 R4 C3 C4 R5 C CUT OUT ARA C16 C17 C9 C1 C13 C14 C11 C12 C15 C19 C18 AFT21HW35 Rev. 8.1 D4664 V DDA V DDB Note: V DDA and V DDB must be tied together and powered by a single DC power supply. Figure 2. AFT21H35W3SR6 Test Circuit Component Layout Table 5. AFT21H35W3SR6 Test Circuit Component Designations and Values art Description art Number Manufacturer C1.3 pf Chip Capacitor ATC1BR3BT5XT ATC C2.7 pf Chip Capacitor ATC1BR7BT5XT ATC C3, C4, C11, C pf Chip Capacitors ATC1B6R8CT5XT ATC C5, C6, C14, C pf Chip Capacitors ATC1B9R1CT5XT ATC C7, C8, C15, C16 1 F Chip Capacitors GRM55DR61H16KA88L Murata C9.5 pf Chip Capacitor ATC1BR5BT5XT ATC C1, C13.8 pf Chip Capacitors ATC1BR8BT5XT ATC C18, C19 47 F, 63 V lectrolytic Capacitors MCGR63V477M13X26-RH Multicomp R1 51, 1/2 W Chip Resistor CRCW2151RJNF Vishay R2, R3 3. K, 1/4 W Chip Resistors CRCW1263KFKA Vishay R4, R5 2.7, 1/4 W Chip Resistors CRCW1262R7FKA Vishay CB Rogers RO435B,.2, r =3.5 D4664 MTL 4

5 TYICAL CHARACTRISTICS G ps, OWR GAIN (db) G ps 16.4 V 44 DD =28Vdc, out =63W(Avg.) 16.2 I DQA = 75 ma, V GSB =.7Vdc 42 Single--Carrier W--CDMA 16 ARC 3.84 MHz Channel Bandwidth ACR Input Signal AR = robability on CCDF f, FRQUNCY (MHz), DRAIN FFICINCY (%) Figure 3. Single -Carrier Output eak -to -Average Ratio Compression (ARC) Broadband out = 63 Watts Avg. ACR (dbc) ARC (db) IMD, INTRMODULATION DISTORTION (dbc) IM3--U IM3--L V DD =28Vdc, out = 4 W () I DQA = 75 ma, V GSB =.7Vdc IM5--U IM5--L IM7--L Two--Tone Measurements IM7--U (f1 + f2)/2 = Center Frequency of 214 MHz TWO--TON SACING (MHz) Figure 4. Intermodulation Distortion roducts versus Two -Tone Spacing G ps, OWR GAIN (db) OUTUT COMRSSION AT.1% ROBABILITY ON CCDF (db) db=18.6w ARC db=55.1w db=77.5w ACR G ps 2 V DD =28Vdc,I DQA = 75 ma, V GSB =.7Vdc f = 214 MHz, Single--Carrier W--CDMA MHz Channel Bandwidth, Input Signal AR = 9.9 robability on CCDF RAIN FFICINCY (%) ACR (dbc) out, OUTUT OWR (WATTS) Figure 5. Output eak -to -Average Ratio Compression (ARC) versus Output ower 5

6 TYICAL CHARACTRISTICS G ps, OWR GAIN (db) MHz ACR 211 MHz G ps 214 MHz V DD =28Vdc,I DQA = 75 ma 2 V GSB =.7 Vdc, Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth, Input Signal 1 AR = 9.9 robability on CCDF out, OUTUT OWR (WATTS) AVG. 211 MHz 214 MHz 211 MHz 217 MHz Figure 6. Single -Carrier W -CDMA ower Gain, Drain fficiency and ACR versus Output ower , DRAIN FFICINCY (%) ACR (dbc) V DD =28Vdc in =dbm I DQA = 75 ma V GSB =.7Vdc Gain GAIN (db) f, FRQUNCY (MHz) Figure 7. Broadband Frequency Response 6

7 f (MHz) Z source V DD =28Vdc,I DQA = 763 ma, ulsed CW, 1 sec(on), 1% Duty Cycle Z in Max Output ower 1dB Z (1) load Gain (db) (dbm) (W) j j j j j j j j j (%) AM/M f (MHz) Z source Z in Max Output ower 3dB Z (2) load Gain (db) (dbm) (W) j j j j j j j j j (1) Load impedance for optimum 1dB power. (2) Load impedance for optimum 3dB power. Z source = Measured impedance presented to the input of the device at the package reference plane. Z in = Impedance as measured from gate contact to ground. Z load = Measured impedance presented to the output of the device at the package reference plane. Figure 8. Carrier Side Load ull erformance Maximum ower Tuning V DD =28Vdc,I DQA = 763 ma, ulsed CW, 1 sec(on), 1% Duty Cycle Max Drain fficiency (%) AM/M 1dB f (MHz) Z source Z in Z (1) load Gain (db) (dbm) (W) (%) AM/M j j j j j j j j j Max Drain fficiency 3dB f (MHz) Z source Z in Z (2) load Gain (db) (dbm) (W) (%) AM/M j j j j j j j j j (1) Load impedance for optimum 1dB efficiency. (2) Load impedance for optimum 3dB efficiency. Z source = Measured impedance presented to the input of the device at the package reference plane. Z in = Impedance as measured from gate contact to ground. Z load = Measured impedance presented to the output of the device at the package reference plane. Figure 9. Carrier Side Load ull erformance Maximum Drain fficiency Tuning Input Load ull Tuner and Test Circuit Device Under Test Output Load ull Tuner and Test Circuit Z source Z in Z load 7

8 f (MHz) Z source V DD =28Vdc,V GSB =.7Vdc, ulsed CW, 1 sec(on), 1% Duty Cycle Z in Max Output ower 1dB Z (1) load Gain (db) (dbm) (W) j j j j j j j j j (%) AM/M f (MHz) Z source Z in Max Output ower 3dB Z (2) load Gain (db) (dbm) (W) j j j j j j j j j (1) Load impedance for optimum 1dB power. (2) Load impedance for optimum 3dB power. Z source = Measured impedance presented to the input of the device at the package reference plane. Z in = Impedance as measured from gate contact to ground. Z load = Measured impedance presented to the output of the device at the package reference plane. Figure 1. eaking Side Load ull erformance Maximum ower Tuning V DD =28Vdc,V GSB =.7Vdc, ulsed CW, 1 sec(on), 1% Duty Cycle Max Drain fficiency (%) AM/M 1dB f (MHz) Z source Z in Z (1) load Gain (db) (dbm) (W) (%) AM/M j j j j j j j j j Max Drain fficiency 3dB f (MHz) Z source Z in Z (2) load Gain (db) (dbm) (W) (%) AM/M j j j j j j j j j (1) Load impedance for optimum 1dB efficiency. (2) Load impedance for optimum 3dB efficiency. Z source = Measured impedance presented to the input of the device at the package reference plane. Z in = Impedance as measured from gate contact to ground. Z load = Measured impedance presented to the output of the device at the package reference plane. Figure 11. eaking Side Load ull erformance Maximum Drain fficiency Tuning Input Load ull Tuner and Test Circuit Device Under Test Output Load ull Tuner and Test Circuit Z source Z in Z load 8

9 1dB - TYICAL CARRIR SID LOAD ULL CONTOURS 214 MHz IMAGINARY RAL Figure 12. 1dB Load ull Output ower Contours (dbm) IMAGINARY RAL Figure 13. 1dB Load ull fficiency Contours (%) 62 6 IMAGINARY RAL RAL Figure 14. 1dB Load ull Gain Contours (db) Figure 15. 1dB Load ull AM/M Contours IMAGINARY Gain Drain fficiency Linearity Output ower NOT: = Maximum Output ower = Maximum Drain fficiency 9

10 3dB - TYICAL CARRIR SID LOAD ULL CONTOURS 214 MHz IMAGINARY RAL Figure 16. 3dB Load ull Output ower Contours (dbm) IMAGINARY RAL Figure 17. 3dB Load ull fficiency Contours (%) 64 IMAGINARY RAL RAL Figure 18. 3dB Load ull Gain Contours (db) Figure 19. 3dB Load ull AM/M Contours IMAGINARY Gain Drain fficiency Linearity Output ower NOT: = Maximum Output ower = Maximum Drain fficiency 1

11 1dB - TYICAL AKING SID LOAD ULL CONTOURS 214 MHz IMAGINARY RAL Figure 2. 1dB Load ull Output ower Contours (dbm) IMAGINARY RAL Figure 21. 1dB Load ull fficiency Contours (%) IMAGINARY RAL Figure 22. 1dB Load ull Gain Contours (db) IMAGINARY RAL Figure 23. 1dB Load ull AM/M Contours NOT: = Maximum Output ower Gain Drain fficiency Linearity Output ower = Maximum Drain fficiency 11

12 3dB - TYICAL AKING SID LOAD ULL CONTOURS 214 MHz IMAGINARY RAL Figure 24. 3dB Load ull Output ower Contours (dbm) IMAGINARY RAL Figure 25. 3dB Load ull fficiency Contours (%) IMAGINARY RAL Figure 26. 3dB Load ull Gain Contours (db) IMAGINARY RAL Figure 27. 3dB Load ull AM/M Contours Gain Drain fficiency Linearity Output ower NOT: = Maximum Output ower = Maximum Drain fficiency 12

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17 RODUCT DOCUMNTATION, SOFTWAR AND TOOLS Refer to the following documents, software and tools to aid your design process. Application Notes AN1955: Thermal Measurement Methodology of RF ower Amplifiers ngineering Bulletins B212: Using Data Sheet Impedances for RF LDMOS Devices Software lectromigration MTTF Calculator RF High ower Model.s2p File Development Tools rinted Circuit Boards For Software and Tools, do a art Number search at and select the art Number link. Go to the Software & Tools tab on the part s roduct Summary page to download the respective tool. The following table summarizes revisions to this document. RVISION HISTORY Revision Date Description Sept. 213 Initial Release of Data Sheet 17

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