RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs

Transcription

1 Freescale Semiconductor Technical Data Document Number: AFT2S15N Rev. 1, 11/213 RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs These 1.5 W RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 185 to 27 MHz. 21 MHz Typical Single--Carrier W--CDMA Performance: V DD =28Vdc, I DQ = 132 ma, P out = 1.5 W Avg., Input Signal PAR = 9.9 Probability on CCDF. Frequency (db) (%) Output PAR (db) ACPR (dbc) IRL (db) AFT2S15NR1 AFT2S15GNR MHz, 1.5 W AVG., 28 V AIRFAST RF POWER LDMOS TRANSISTORS 211 MHz MHz MHz MHz Typical Single--Carrier W--CDMA Performance: V DD =28Vdc, I DQ = 132 ma, P out = 1.5 W Avg., Input Signal PAR = 9.9 Probability on CCDF. TO PLASTIC AFT2S15NR1 Frequency (db) (%) Output PAR (db) ACPR (dbc) IRL (db) 185 MHz MHz MHz TO GULL PLASTIC AFT2S15GNR1 26 MHz Typical Single--Carrier W--CDMA Performance: V DD =28Vdc, I DQ = 132 ma, P out = 2.1 W Avg., Input Signal PAR = 9.9 Probability on CCDF. Frequency (db) (%) Output PAR (db) ACPR (dbc) IRL (db) RF in /V GS RF out /V DS 23 MHz MHz MHz MHz MHz Features Greater Negative Gate--Source Voltage Range for Improved Class C Operation esigned for Digital Predistortion Error Correction Systems Optimized for Doherty Applications In Tape and Reel. R1 Suffix = 5 Units, 24 mm Tape Width, 13--inch Reel. (Top View) Note: The backside of the package is the source terminal for the transistor. Figure 1. Pin Connections, 213. All rights reserved. 1

2 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage V DSS --.5, +65 Vdc Gate--Source Voltage V GS --6., +1 Vdc Operating Voltage V DD 32, + Vdc Storage Temperature Range T stg --65 to +15 C Case Operating Temperature Range T C --4 to +15 C Operating Junction Temperature Range (1,2) T J --4 to +225 C CW T C =25 C Derate above 25 C Table 2. Thermal Characteristics CW 11.1 W W/ C Characteristic Symbol Value (2,3) Unit Thermal Resistance, Junction to Case Case Temperature 77 C, 1.5 W CW, 28 Vdc, I DQ = 132 ma, 214 MHz Table 3. ESD Protection Characteristics Human Body Model (per JESD22--A114) Machine Model (per EIA/JESD22--A115) Test Methodology Charge Device Model (per JESD22--C11) Table 4. Moisture Sensitivity Level R JC 4.2 C/W Class Test Methodology Rating Package Peak Temperature Unit Per JESD22--A113, IPC/JEDEC J--STD C Table 5. Electrical Characteristics (T A =25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit 1C A IV Off Characteristics Zero Gate Voltage Drain Leakage Current (V DS =65Vdc,V GS =Vdc) Zero Gate Voltage Drain Leakage Current (V DS =28Vdc,V GS =Vdc) Gate--Source Leakage Current (V GS =5Vdc,V DS =Vdc) On Characteristics Gate Threshold Voltage (V DS =1Vdc,I D =.6 Adc) Gate Quiescent Voltage (V DD =28Vdc,I D = 132 madc, Measured in Functional Test) Drain--Source On--Voltage (V GS =1Vdc,I D = 6 Adc) I DSS 1 Adc I DSS 1 Adc I GSS 1 Adc V GS(th) Vdc V GS(Q) Vdc V DS(on) Vdc 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to Select Documentation/Application Notes -- AN1955. (continued) 2

3 Table 5. Electrical Characteristics (T A =25 C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Functional Tests (1,2) (In Freescale Test Fixture, 5 ohm system) V DD =28Vdc,I DQ = 132 ma, P out = 1.5 W Avg., f = 2 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 Probability on CCDF. ACPR measured in 3.84 MHz Channel 5 MHzOffset. Power Gain db Drain Efficiency % Output Peak--to--Average Probability on CCDF PAR db Adjacent Channel Power Ratio ACPR dbc Input Return Loss IRL db Load Mismatch (In Freescale Test Fixture, 5 ohm system) I DQ = 132 ma, f = 214 MHz VSWR1:1at32Vdc,14WCW (3) Output Power (3 db Input Overdrive from 12 W CW (3) Rated Power) No Device Degradation Typical Performance (In Freescale Test Fixture, 5 ohm system) V DD =28Vdc,I DQ = 132 ma, MHz Bandwidth P 1 db Compression Point, CW P1dB 16.2 (3,4) W AM/PM (Maximum value measured at the P3dB compression point across the MHz frequency range.) VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) --16 VBW res MHz Gain Flatness in 6 MHz P out =1.5WAvg. G F.5 db Gain Variation over Temperature (--3 C to+85 C) G.1 db/ C Output Power Variation over Temperature P1dB.4 db/ C (--3 C to+85 C) (3) 1. Part internally matched on input. 2. Measurements made with device in straight lead configuration, before any lead forming operation is applied. Lead forming is used for gull wing (GN) parts. 3. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table. 4. Calculated from load pull P3dB measurements. 3

4 C15 C27 V GS C9 C7 D4753 C19 C21 C23 V DD C13 C11 C5* C C25 C1* C2* R1 C3 C4* C14 C12 R2 C6* CUT OUT AREA C18 C26 C8 C24 V DD V GS C16 C1 AFT2S15N Rev. 2 C2 C22 C28 *C1, C2, C4, C5 and C6 are mounted vertically. Figure 2. AFT2S15NR1 Test Circuit Component Layout MHz Table 6. AFT2S15NR1 Test Circuit Component Designations and Values MHz Part Description Part Number Manufacturer C1 8.2 pf Chip Capacitor ATC1B8R2CT5XT ATC C2 2.4 pf Chip Capacitor ATC8B2R4BT5XT ATC C3 1.7 pf Chip Capacitor ATC1B1R7BT5XT ATC C4 9.1 pf Chip Capacitor ATC1B9R1CT5XT ATC C5, C6 6.8 pf Chip Capacitors ATC1B6R8CT5XT ATC C7, C8 24 pf Chip Capacitors ATC1B241JT2XT ATC C9, C1, C21, C22 22 pf Chip Capacitors C1812C224K5RAC--TU Kemet C11, C12, C23, C24.1 F Chip Capacitors CDR33BX14AKWS AVX C13, C14, C25, C F Chip Capacitors C1825C225J5RAC--TU Kemet C15, C16 22 F, 35 V Tantalum Capacitors T491X226K35AT Kemet C, C18, C19, C2 75 pf Chip Capacitors ATC8B75JT5XT ATC C27, C28 47 F, 63 V Electrolytic Capacitors MCGPR63V477M13X26--RH Multicomp R1, R2 1 Chip Resistors CRCW1261RFKEA Vishay PCB Rogers RO435B,.2, r =3.66 D4753 MTL 4

5 TYPICAL CHARACTERISTICS MHZ, POWER GAIN (db) ACPR V DD =28Vdc,P out =1.5W(Avg.) I DQ = 132 ma, Single--Carrier W--CDMA MHz Channel Bandwidth --45 Input Signal PAR = 9.9 Probability on CCDF f, FREQUENCY (MHz) PARC , DRAIN EFFICIENCY (%) Figure 3. Single -Carrier Output Peak -to -Average Ratio Compression (PARC) Broadband P out = 1.5 Watts Avg. IRL ACPR (dbc) IRL, INPUT RETURN LOSS (db) PARC (db) IMD, INTERMODULATION DISTORTION (dbc) V DD =28Vdc,P out = 1 W (PEP), I DQ = 132 ma Two--Tone Measurements, (f1 + f2)/2 = Center Frequency of 214 MHz IM3--U IM5--U IM7--U IM3--L IM5--L IM7--L TWO--TONE SPACING (MHz) Figure 4. Intermodulation Distortion Products versus Two -Tone Spacing, POWER GAIN (db) OUTPUT COMPRESSION AT.1% PROBABILITY ON CCDF (db) dB=1.5W --2dB=2.2W --3dB=3W ACPR PARC --5 V DD =28Vdc,I DQ = 132 ma, f = 214 MHz 1 Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth --6 Input Signal PAR = 9.9 Probability on CCDF RAIN EFFICIENCY (%) ACPR (dbc) P out, OUTPUT POWER (WATTS) Figure 5. Output Peak -to -Average Ratio Compression (PARC) versus Output Power 5

6 TYPICAL CHARACTERISTICS MHz, POWER GAIN (db) V DD =28Vdc,I DQ = 132 ma Single--Carrier W--CDMA 214 MHz 2 MHz 211 MHz 211 MHz 214 MHz 2 MHz MHz 211 MHz MHz Channel Bandwidth, Input Signal PAR = 9.9 Probability on CCDF 14 1 ACPR P out, OUTPUT POWER (WATTS) AVG. 1 2 Figure 6. Single -Carrier W -CDMA Power Gain, Drain Efficiency and ACPR versus Output Power 2 MHz , DRAIN EFFICIENCY (%) ACPR (dbc) V DD =28Vdc P in =dbm I DQ = 132 ma Gain 2 1 GAIN (db) IRL (db) 13 IRL f, FREQUENCY (MHz) Figure 7. Broadband Frequency Response 6

7 ALTERNATE CHARACTERIZATION MHz C16 C28 V GS C1 D4564 C2 C8 V DD C14 C12 C6* C18 C22 C24 C26 C1* C2* R1 C3* C4* C15 C13 R2 C7* CUT OUT AREA C19 C23 C25 C27 C5* V GS C C11 AFT2S15N Rev. 2 *C1, C2, C3, C4, C5, C6 and C7 are mounted vertically. C9 C21 V DD C29 Figure 8. AFT2S15NR1 Test Circuit Component Layout MHz Table 7. AFT2S15NR1 Test Circuit Component Designations and Values MHz Part Description Part Number Manufacturer C1 11 pf Chip Capacitor ATC1B11RCT5XT ATC C2, C3 3.3 pf Chip Capacitors ATC8B3R3BT5XT ATC C4, C5 47 pf Chip Capacitors ATC6F47BT25XT ATC C6, C7 6.8 pf Chip Capacitors ATC1B6R8CT5XT ATC C8, C9 24 pf Chip Capacitors ATC1B241JT2XT ATC C1, C11, C22, C23 22 pf Chip Capacitors C1812C224K5RAC--TU Kemet C12, C13, C24, C25.1 F Chip Capacitors CDR33BX14AKWS AVX C14, C15, C26, C F, 5 V Chip Capacitors C1825C225J5RAC--TU Kemet C16, C 22 F, 35 V Tantalum Capacitors T491X226K35AT Kemet C18, C19, C2, C21 75 pf Chip Capacitors ATC8B75JT5XT ATC C28, C29 47 F, 63 V Electrolytic Capacitors MCGPR63V477M13X26--RH Multicomp R1, R2 1 Chip Resistors CRCW1261RFKEA Vishay PCB Rogers RO435B,.2, r =3.66 D4564 MTL 7

8 ALTERNATE CHARACTERIZATION MHz, POWER GAIN (db) ACPR PARC V DD =28Vdc,P out =1.5W(Avg.) I DQ = 132 ma, Single--Carrier W--CDMA 3.84 MHz Channel Bandwidth, Input Signal PAR = 9.9 Probability on CCDF IRL f, FREQUENCY (MHz) , DRAIN EFFICIENCY (%) Figure 9. Single -Carrier Output Peak -to -Average Ratio Compression (PARC) Broadband P out = 1.5 Watts Avg. ACPR (dbc) IRL, INPUT RETURN LOSS (db) PARC (db), POWER GAIN (db) V DD =28Vdc,I DQ = 132 ma Single--Carrier W--CDMA 3.84 MHz Channel Bandwidth 184 MHz 185 MHz 188 MHz 185 MHz 185 MHz 184 MHz 188 MHz 188 MHz 184 MHz ACPR.8 Input Signal PAR = 9.9 Probability on CCDF P out, OUTPUT POWER (WATTS) AVG. Figure 1. Single -Carrier W -CDMA Power Gain, Drain Efficiency and ACPR versus Output Power , DRAIN EFFICIENCY (%) ACPR (dbc) V DD =28Vdc P in =dbm I DQ = 132 ma Gain GAIN (db) IRL (db) IRL f, FREQUENCY (MHz) Figure 11. Broadband Frequency Response 8

9 ALTERNATE CHARACTERIZATION MHz C15 C2 C9 V GS C7 D4848 C18 C19 V DD C13 C11 C5 C4* C C21 C1* R1 R2 C2* C3* C14 C12 C6 CUT OUT AREA V GS C16 C1 AFT2S15N 2.6 GHz Rev. *C1, C2, C3 and C4 are mounted vertically. C8 V DD Figure 12. AFT2S15NR1 Test Circuit Component Layout MHz Table 8. AFT2S15NR1 Test Circuit Component Designations and Values MHz Part Description Part Number Manufacturer C1 4.3 pf Chip Capacitor ATC6F4R3CT25XT ATC C2 1.3 pf Chip Capacitor ATC8B1R3BT5XT ATC C3 8.2 pf Chip Capacitor ATC6F8R2BT25XT ATC C4 6.8 pf Chip Capacitor ATC1B6R8CT5XT ATC C5, C6 6.8 pf Chip Capacitors ATC8B6R8CT5XT ATC C7, C8, C 2.2 F Chip Capacitors C3225X7R1H225KT TDK C9, C1, C18 22 nf Chip Capacitors C1812C224K5RAC--TU Kemet C11, C12, C19.1 F Chip Capacitors CDR33BX14AKWS AVX C13, C14, C F Chip Capacitors C1825C225J5RAC--TU Kemet C15, C16 22 F, 35 V Tantalum Capacitors T491X226K35AT Kemet C2 47 F, 63 V Electrolytic Capacitor MCGPR63V477M13X26--RH Multicomp R1, R Chip Resistors CRCW1264R75FKEA Vishay PCB Rogers RO435B,.2, r =3.66 D4848 MTL 9

10 ALTERNATE CHARACTERIZATION MHz, POWER GAIN (db) V DD =28Vdc,P out =2.1W(Avg.) I DQ = 132 ma ACPR PARC f, FREQUENCY (MHz) Figure 13. Single -Carrier Output Peak -to -Average Ratio Compression (PARC) Broadband P out = 2.1 Watts Avg. Single--Carrier W--CDMA 3.84 MHz Channel Bandwidth, Input Signal PAR = 9.9 Probability on CCDF IRL , DRAIN EFFICIENCY (%) ACPR (dbc) IRL, INPUT RETURN LOSS (db) PARC (db), POWER GAIN (db) V DD =28Vdc,I DQ = 132 ma Single--Carrier W--CDMA 3.84 MHz Channel Bandwidth 23 MHz 25 MHz 27 MHz 25 MHz 27 MHz 23 MHz 23 MHz 5 ACPR 27 MHz 25 MHz Input Signal PAR = 9.9 Probability on CCDF 1 5 P out, OUTPUT POWER (WATTS) AVG. Figure 14. Single -Carrier W -CDMA Power Gain, Drain Efficiency and ACPR versus Output Power , DRAIN EFFICIENCY (%) ACPR (dbc) V DD =28Vdc P in =dbm I DQ = 132 ma 2 GAIN (db) Gain IRL IRL (db) f, FREQUENCY (MHz) Figure 15. Broadband Frequency Response 1

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17 PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following documents, software and tools to aid your design process. Application Notes AN197: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages AN1955: Thermal Measurement Methodology of RF Power Amplifiers AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages Engineering Bulletins EB212: Using Data Sheet Impedances for RF LDMOS Devices Software Electromigration MTTF Calculator RF High Power Model.s2p File Development Tools Printed Circuit Boards For Software and Tools, do a Part Number search at and select the Part Number link. Go to the Software & Tools tab on the part s Product Summary page to download the respective tool. The following table summarizes revisions to this document. REVISION HISTORY Revision Date Description Apr. 213 Initial Release of Data Sheet 1 Nov. 213 Upper frequency limit changed from 269 to 27 MHz to reflect measurement data, p. 1 Table 2, Thermal Characteristics: changed 2 to 214 MHz to reflect recent thermal test results, p. 2 Table 5, Electrical Characteristics, Load Mismatch: updated VSWR power levels (8 W CW to 14 W CW, 7 W CW to 12 W CW) to reflect recent characterization data test results, p. 3 Table 5, Electrical Characteristics, Typical Performance: changed P1dB from 7 W to 16.2 W based on P3dB load pull calculations, p. 3 Figs. 2, 8, 12, Test Circuit Component Layout: added MTL number, pp. 4, 7, 9 Tables 6, 7, 8, Test Circuit Component Designations and Values: updated PCB description to reflect most current board specifications from Rogers and added MTL part number, pp. 4, 7, 9

18 How to Reach Us: Home Page: freescale.com Web Support: freescale.com/support Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. Freescale reserves the right to make changes without further notice to any products herein. Freescale makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters that may be provided in Freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including typicals, must be validated for each customer application by customer s technical experts. Freescale does not convey any license under its patent rights nor the rights of others. Freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/salestermsandconditions. Freescale and the Freescale logo are trademarks of, Reg. U.S. Pat. & Tm. Off. Airfast is a trademark of All other product or service names are the property of their respective owners. E 213 Document Number: AFT2S15N 18 Rev. 1, 11/213