RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET

Transcription

1 Freescale Semiconductor Technical Data Document Number: A2T18H16--24S Rev., 11/215 RF ower LDMOS Transistor N--Channel nhancement--mode Lateral MOSFT This 28 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 185 to 188 MHz. 18 MHz Typical Doherty Single--Carrier W--CDMA erformance: V DD =28Vdc, I DQA = 4 ma, V GSB =.65Vdc, out = 28 W Avg., Input Signal AR = 9.9 robability on CCDF. A2T18H16-24SR MHz, 28 W AVG., 28 V AIRFAST RF OWR LDMOS TRANSISTOR Frequency G ps (db) Output AR (db) ACR (dbc) 185 MHz MHz MHz Features NI -78S -4L2L Advanced High erformance In--ackage Doherty Greater Negative Gate--Source Voltage Range for Improved Class C Operation Designed for Digital redistortion rror Correction Systems Carrier 6 VBW A (1) RF ina /V GSA 1 5 RF outa /V DSA RF inb /V GSB 2 4 RF outb /V DSB eaking (Top View) 3 VBW B (1) Figure 1. in Connections 1. Device cannot operate with the V DD current supplied through pin 3 and pin 6., 215. All rights reserved. A2T18H16-24SR3 1

2 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage V DSS.5, +65 Vdc Gate--Source Voltage V GS., +1 Vdc Operating Voltage V DD 32, + Vdc Storage Temperature Range T stg 5 to +15 C Case Operating Temperature Range T C to +15 C Operating Junction Temperature Range (1,2) T J to +225 C Table 2. Thermal Characteristics Characteristic Symbol Value (2,3) Unit Thermal Resistance, Junction to Case Case Temperature 75 C, 28 W Avg., W--CDMA, 28 Vdc, I DQA = 4 ma, V GSB =.65 Vdc, 184 MHz Table 3. SD rotection Characteristics Test Methodology R JC.45 C/W Human Body Model (per JSD22--A114) 2 Machine Model (per IA/JSD22--A115) Charge Device Model (per JSD22--C11) Table 4. lectrical Characteristics (T A =25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Off Characteristics (4) Zero Gate Voltage Drain Leakage Current (V DS =65Vdc,V GS =Vdc) Class I DSS 1 Adc B IV Zero Gate Voltage Drain Leakage Current (V DS =32Vdc,V GS =Vdc) Gate--Source Leakage Current (V GS =5Vdc,V DS =Vdc) On Characteristics - Side A, Carrier Gate Threshold Voltage (V DS =1Vdc,I D =6 Adc) Gate Quiescent Voltage (V DD =28Vdc,I D = 4 madc, Measured in Functional Test) Drain--Source On--Voltage (V GS =1Vdc,I D =.6Adc) On Characteristics - Side B, eaking Gate Threshold Voltage (V DS =1Vdc,I D = 1 Adc) Drain--Source On--Voltage (V GS =1Vdc,I D =1.Adc) I DSS 1 Adc I GSS 1 Adc V GS(th) Vdc V GSA(Q) Vdc V DS(on) Vdc V GS(th) Vdc V DS(on) Vdc 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at 3. Refer to AN1955, Thermal Measurement Methodology of RF ower Amplifiers. Go to and search for AN ach side of device measured separately. (continued) A2T18H16-24SR3 2

3 Table 4. lectrical Characteristics (T A =25 C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Functional Tests (1,2) (In Freescale Doherty Test Fixture, 5 ohm system) V DD =28Vdc,I DQA = 4 ma, V GSB =.65Vdc, out =28WAvg., f = 185 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal AR = 9.9 robability on CCDF. ACR measured in 3.84 MHz Channel 5 MHzOffset. ower Gain G ps db Drain fficiency % Output eak--to--average robability on CCDF AR db Adjacent Channel ower Ratio ACR dbc Load Mismatch (2) (In Freescale Doherty Test Fixture, 5 ohm system) I DQA = 4 ma, V GSB =.65 Vdc, f = 184 MHz VSWR 1:1 at 32 Vdc, 158 W CW Output ower No Device Degradation (3 db Input Overdrive from 1 W CW Rated ower) Typical erformance (2) (In Freescale Doherty Test Fixture, 5 ohm system) V DD =28Vdc,I DQA = 4 ma, V GSB =.65 Vdc, MHz Bandwidth 1 db Compression oint, CW 1dB 126 W 3 db Compression oint (3) 3dB 182 W AM/M (Maximum value measured at the 3dB compression point across the MHz frequency range) 1.3 VBW Resonance oint (IMD Third Order Intermodulation Inflection oint) VBW res 135 MHz Gain Flatness in 75 MHz out =28WAvg. G F.4 db Gain Variation over Temperature ( 3 C to+85 C) Output ower Variation over Temperature ( 3 C to+85 C) G.8 db/ C 1dB.3 db/ C Table 5. Ordering Information Device Tape and Reel Information ackage A2T18H16--24SR3 R3 Suffix = 25 Units, 44 mm Tape Width, 13--inch Reel NI--78S--4L2L 1. art internally matched both on input and output. 2. Measurements made with device in an asymmetrical Doherty configuration. 3. 3dB = avg + 7. db where avg is the average output power measured using an unclipped W--CDMA single--carrier input signal where output AR is compressed to 7. probability on CCDF. A2T18H16-24SR3 3

4 V GGA V DDA -- C14 R2 C1 A2T18H16--24S Rev. 2 C17 C15 C16 C2 R1 Z1 C5 C6 C1 R3 C7 C11 C3 C4 C8 C9 CUT OUT ARA C C18 C19 C2 C21 D68661 C13 C12 R4 C22 C23 C24 R5 -- C25 V GGB V DDB Figure 2. A2T18H16-24SR3 Test Circuit Component Layout Table 6. A2T18H16-24SR3 Test Circuit Component Designations and Values art Description art Number Manufacturer CB D58628 MTL C1, C13, C16, C17, C22, C24 1 F Chip Capacitors C575X7S2A16M23KB TDK C2, C4, C8, C12, C15, C19, C23 12 pf Chip Capacitors ATC6F12JT25XT ATC C3 1.8 pf Chip Capacitor ATC6F1R8BT25XT ATC C5, C6.3 pf Chip Capacitors ATC6FR3BT25XT ATC C7 1. pf Chip Capacitor ATC6F1RBT25XT ATC C9 2. pf Chip Capacitor ATC6F2RBT25XT ATC C1, C11, C2.5 pf Chip Capacitors ATC6FR5BT25XT ATC C14, C25 22 F, 5 V lectrolytic Capacitors 227CKS5M Illinois Capacitor C pf Chip Capacitor ATC6F9R1BT25XT ATC C pf Chip Capacitor ATC6F1R5BT25XT ATC R1 5, 4 W Chip Resistor C1A5Z4 Anaren R2, R5 2 K, 1/4 W Chip Resistors CRCW1262KJNA Vishay R3, R4 5.6, 1/4 W Chip Resistors CRCW1265R6FKA Vishay Z1 17 MHz Band, 9, 5 db Directional Coupler X3C191-5S Anaren CB Rogers RO435B,.2, r =3.66 D68661 MTL A2T18H16-24SR3 4

5 TYICAL CHARACTRISTICS G ps, OWR GAIN (db) V DD =28Vdc, out =28W(Avg.),I DQA = 4 ma, V GSB =.65Vdc Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Input Signal AR = 9.9 db robability on CCDF G ps ARC ACR f, FRQUNCY (MHz), DRAIN FFICINCY Figure 3. Single -Carrier Output eak -to -Average Ratio Compression (ARC) Broadband out = 28 Watts Avg. ACR (dbc) ARC (db) IMD, INTRMODULATION DISTORTION (dbc) V DD =28Vdc, out = 34 W (), I DQA = 4 ma V GSB =.65 Vdc, Two--Tone Measurements (f1 + f2)/2 = Center Frequency of 184 MHz IM5--L IM5--U IM3--U IM3--L IM7--L IM7--U TWO--TON SACING (MHz) Figure 4. Intermodulation Distortion roducts versus Two -Tone Spacing G ps, OWR GAIN (db) OUTUT COMRSSION AT.1% ROBABILITY ON CCDF (db) V DD =28Vdc,I DQA = 4 ma, V GSB =.65Vdc f = 184 MHz, Single--Carrier W--CDMA 3.84 MHz Channel Bandwidth 1 db = 16 W db = 26 W ACR 3 db = 37 W 35 Input Signal AR = 9.9 robability on CCDF ARC out, OUTUT OWR (WATTS) G ps Figure 5. Output eak -to -Average Ratio Compression (ARC) versus Output ower RAIN FFICINCY ACR (dbc) A2T18H16-24SR3 5

6 TYICAL CHARACTRISTICS G ps, OWR GAIN (db) V DD =28Vdc,I DQA = 4 ma V GSB =.65Vdc 188 MHz 185 MHz 188 MHz 185 MHz 184 MHz 184 MHz 188 MHz 185 MHz 12 Single--Carrier W--CDMA, 3.84 MHz Channel 15 Bandwidth, Input Signal AR = robability on CCDF out, OUTUT OWR (WATTS) AVG. Figure 6. Single -Carrier W -CDMA ower Gain, Drain fficiency and ACR versus Output ower 184 MHz ACR G ps , DRAIN FFICINCY ACR (dbc) Gain GAIN (db) V DD =28Vdc in =dbm I DQA = 4 ma V GSB =.65Vdc f, FRQUNCY (MHz) Figure 7. Broadband Frequency Response A2T18H16-24SR3 6

7 Table 7. Carrier Side Load ull erformance Maximum ower Tuning V DD =28Vdc,I DQA = 48 ma, ulsed CW, 1 sec(on), 1% Duty Cycle f (MHz) Z source Z in Max Output ower 1dB Z (1) load Gain (db) (dbm) (W) j j j j j j j j j AM/M f (MHz) Z source Z in Max Output ower 3dB Z (2) load Gain (db) (dbm) (W) j j j j j j j j j (1) Load impedance for optimum 1dB power. (2) Load impedance for optimum 3dB power. Z source = Measured impedance presented to the input of the device at the package reference plane. Z in = Impedance as measured from gate contact to ground. Z load = Measured impedance presented to the output of the device at the package reference plane. Table 8. Carrier Side Load ull erformance Maximum Drain fficiency Tuning V DD =28Vdc,I DQA = 48 ma, ulsed CW, 1 sec(on), 1% Duty Cycle f (MHz) Z source Z in Max Drain fficiency 1dB Z (1) load Gain (db) (dbm) (W) j j j j j j j j j AM/M AM/M f (MHz) Z source Z in Max Drain fficiency 3dB Z (2) load Gain (db) (dbm) (W) j j j j j j j j j (1) Load impedance for optimum 1dB efficiency. (2) Load impedance for optimum 3dB efficiency. Z source = Measured impedance presented to the input of the device at the package reference plane. Z in = Impedance as measured from gate contact to ground. Z load = Measured impedance presented to the output of the device at the package reference plane. AM/M Input Load ull Tuner and Test Circuit Device Under Test Output Load ull Tuner and Test Circuit Z source Z in Z load A2T18H16-24SR3 7

8 Table 9. eaking Side Load ull erformance Maximum ower Tuning V DD =28Vdc,V GSB =.65Vdc, ulsed CW, 1 sec(on), 1% Duty Cycle f (MHz) Z source Z in Max Output ower 1dB Z (1) load Gain (db) (dbm) (W) j j j j j j j j j AM/M f (MHz) Z source Z in Max Output ower 3dB Z (2) load Gain (db) (dbm) (W) j j j j j j j j j (1) Load impedance for optimum 1dB power. (2) Load impedance for optimum 3dB power. Z source = Measured impedance presented to the input of the device at the package reference plane. Z in = Impedance as measured from gate contact to ground. Z load = Measured impedance presented to the output of the device at the package reference plane. Table 1. eaking Side Load ull erformance Maximum Drain fficiency Tuning V DD =28Vdc,V GSB =.65Vdc, ulsed CW, 1 sec(on), 1% Duty Cycle f (MHz) Z source Z in Max Drain fficiency 1dB Z (1) load Gain (db) (dbm) (W) j j j j j j j j j AM/M AM/M f (MHz) Z source Z in Max Drain fficiency 3dB Z (2) load Gain (db) (dbm) (W) j j j j j j j j j (1) Load impedance for optimum 1dB efficiency. (2) Load impedance for optimum 3dB efficiency. Z source = Measured impedance presented to the input of the device at the package reference plane. Z in = Impedance as measured from gate contact to ground. Z load = Measured impedance presented to the output of the device at the package reference plane. AM/M Input Load ull Tuner and Test Circuit Device Under Test Output Load ull Tuner and Test Circuit Z source Z in Z load A2T18H16-24SR3 8

9 1dB TYICAL CARRIR LOAD ULL CONTOURS 184 MHz IMAGINARY RAL Figure 8. 1dB Load ull Output ower Contours (dbm) 47 IMAGINARY RAL Figure 9. 1dB Load ull fficiency Contours IMAGINARY RAL Figure 1. 1dB Load ull Gain Contours (db) IMAGINARY RAL 8 Figure 11. 1dB Load ull AM/M Contours Gain Drain fficiency Linearity Output ower NOT: = Maximum Output ower = Maximum Drain fficiency A2T18H16-24SR3 9

10 3dB TYICAL CARRIR LOAD ULL CONTOURS 184 MHz IMAGINARY RAL Figure 12. 3dB Load ull Output ower Contours (dbm) IMAGINARY RAL Figure 13. 3dB Load ull fficiency Contours IMAGINARY RAL Figure 14. 3dB Load ull Gain Contours (db) IMAGINARY RAL Figure 15. 3dB Load ull AM/M Contours Gain Drain fficiency Linearity Output ower NOT: = Maximum Output ower = Maximum Drain fficiency A2T18H16-24SR3 1

11 1dB TYICAL AKING LOAD ULL CONTOURS 184 MHz IMAGINARY RAL Figure 16. 1dB Load ull Output ower Contours (dbm) IMAGINARY RAL Figure 17. 1dB Load ull fficiency Contours IMAGINARY RAL Figure 18. 1dB Load ull Gain Contours (db) IMAGINARY RAL Figure 19. 1dB Load ull AM/M Contours 32 Gain Drain fficiency Linearity Output ower NOT: = Maximum Output ower = Maximum Drain fficiency A2T18H16-24SR3 11

12 3dB TYICAL AKING LOAD ULL CONTOURS 184 MHz IMAGINARY RAL Figure 2. 3dB Load ull Output ower Contours (dbm) IMAGINARY RAL Figure 21. 3dB Load ull fficiency Contours 6 IMAGINARY RAL Figure 22. 3dB Load ull Gain Contours (db) 14.5 IMAGINARY RAL Figure 23. 3dB Load ull AM/M Contours Gain Drain fficiency Linearity Output ower NOT: = Maximum Output ower = Maximum Drain fficiency A2T18H16-24SR3 12

13 ACKAG DIMNSIONS A2T18H16-24SR3 13

14 A2T18H16-24SR3 14

15 RODUCT DOCUMNTATION, SOFTWAR AND TOOLS Refer to the following resources to aid your design process. Application Notes AN1955: Thermal Measurement Methodology of RF ower Amplifiers ngineering Bulletins B212: Using Data Sheet Impedances for RF LDMOS Devices Software lectromigration MTTF Calculator RF High ower Model s2p File Development Tools rinted Circuit Boards To Download Resources Specific to a Given art Number: 1. Go to 2. Search by part number 3. Click part number link 4. Choose the desired resource from the drop down menu The following table summarizes revisions to this document. RVISION HISTORY Revision Date Description Nov. 215 Initial Release of Data Sheet A2T18H16-24SR3 15

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