RF Power LDMOS Transistor N Channel Enhancement Mode Lateral MOSFET

Transcription

1 Freescale Semiconductor Technical Data Document Number: AFT18S290 13S Rev. 0, 5/13 RF ower LDMOS Transistor N Channel nhancement Mode Lateral MOSFT This 63 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1995 MHz. Typical Single Carrier W CDMA erformance: V DD = 28 Volts, I DQ = 00 ma, out = 63 Watts Avg., Input Signal AR = % robability on CCDF MHz, 63 W AVG., 28 V Frequency G ps (db) Output AR (db) ACR (dbc) IRL (db) 1930 MHz MHz MHz MHz Typical Single Carrier W CDMA erformance: V DD = 28 Volts, I DQ = 00 ma, out = 63 Watts Avg., Input Signal AR = % robability on CCDF. NI 880XS 2L4S Frequency G ps (db) Output AR (db) ACR (dbc) IRL (db) 1805 MHz N.C. 1 6 VBW (1) 1840 MHz MHz RF in /V GS 2 5 RF out /V DS Features Greater Negative Gate Source Voltage Range for Improved Class C Operation Designed for Digital redistortion rror Correction Systems Optimized for Doherty Applications In Tape and Reel. R3 Suffix = 250 Units, 44 mm Tape Width, 13 inch Reel. N.C. 3 4 VBW (1) (Top View) Figure 1. in Connections 1. Device cannot operate with the V DD current supplied through pin 4 and pin 6., 13. All rights reserved. 1

2 Table 1. Maximum Ratings Rating Symbol Value Unit Drain Source Voltage V DSS 0.5, +65 Vdc Gate Source Voltage V GS 6.0, +10 Vdc Operating Voltage V DD 32, +0 Vdc Storage Temperature Range T stg 65 to +150 C Case Operating Temperature Range T C 40 to +150 C Operating Junction Temperature Range (1,2) T J 40 to +225 C CW T C = 25 C Derate above 25 C Table 2. Thermal Characteristics CW W W/ C Characteristic Symbol Value (2,3) Unit Thermal Resistance, Junction to Case Case Temperature 80 C, 66 W CW, 28 Vdc, I DQ = 00 ma, 1960 MHz R θjc 0.42 C/W Table 3. SD rotection Characteristics Test Methodology Class Human Body Model (per JSD22 A114) 2 Machine Model (per IA/JSD22 A115) B Charge Device Model (per JSD22 C101) IV Table 4. lectrical Characteristics (T A = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Off Characteristics Zero Gate Voltage Drain Leakage Current (V DS = 65 Vdc, V GS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (V DS = 28 Vdc, V GS = 0 Vdc) Gate Source Leakage Current (V GS = 5 Vdc, V DS = 0 Vdc) I DSS 10 μadc I DSS 1 μadc I GSS 1 μadc On Characteristics Gate Threshold Voltage (V DS = 10 Vdc, I D = 389 μadc) Gate Quiescent Voltage (V DD = 28 Vdc, I D = 00 madc, Measured in Functional Test) Drain Source On Voltage (V GS = 10 Vdc, I D = 5.0 Adc) V GS(th) Vdc V GS(Q) Vdc V DS(on) Vdc 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF ower Amplifiers. Go to Select Documentation/Application Notes AN1955. (continued) 2

3 Table 4. lectrical Characteristics (T A = 25 C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Functional Tests (1) (In Freescale Test Fixture, 50 ohm system) V DD = 28 Vdc, I DQ = 00 ma, out = 63 W Avg., f = 1960 MHz, Single Carrier W CDMA, IQ Magnitude Clipping, Input Signal AR = % robability on CCDF. ACR measured in 3.84 MHz Channel ±5 MHz Offset. ower Gain G ps db Drain fficiency η D % Output eak to Average 0.01% robability on CCDF AR db Adjacent Channel ower Ratio ACR dbc Input Return Loss IRL 19 6 db Load Mismatch (In Freescale Test Fixture, 50 ohm system) I DQ = 00 ma, f = 1960 MHz VSWR 10:1 at 32 Vdc, 363 W CW (2) Output ower (3 db Input Overdrive from 263 W CW (2) Rated ower) No Device Degradation Typical erformance (In Freescale Test Fixture, 50 ohm system) V DD = 28 Vdc, I DQ = 00 ma, MHz Bandwidth 1 db Compression oint, CW 1dB 263 (2) W AM/M (Maximum value measured at the 3dB compression point across the MHz bandwidth) VBW Resonance oint (IMD Third Order Intermodulation Inflection oint) Φ 15 VBW res 85 MHz Gain Flatness in 65 MHz out = 63 W Avg. G F 0.2 db Gain Variation over Temperature ( 30 C to +85 C) ΔG 0.01 db/ C Output ower Variation over Temperature Δ1dB db/ C ( 30 C to +85 C) (2) 1. art internally matched both on input and output. 2. xceeds recommended operating conditions. See CW operation data in Maximum Ratings table. 3

4 V DD C24 C14 V GG R1 C19 C C18 C7 C3* C15 C1* C4* C5* C6* C2* C CUT OUT ARA C9* C10* C11* C12* C13* C21 C8 C16 R2 C22 C23 V GG V DD C25 AFT18S2903S Rev. 0 *C1, C2, C3, C4, C5, C6, C9, C10, C11, C12 and C13 are mounted vertically. Figure 2. Test Circuit Component Layout MHz Table 5. Test Circuit Component Designations and Values MHz art Description art Number Manufacturer C1, C2, C3, C7 C8 8.2 pf Chip Capacitors ATC100B8R2BT500XT ATC C4 0.8 pf Chip Capacitor ATC100B0R8BT500XT ATC C5 1.1 pf Chip Capacitor ATC100B1R1BT500XT ATC C6 0.7 pf Chip Capacitor ATC100B0R7BT500XT ATC C9, C pf Chip Capacitors ATC800B8R2BT500XT ATC C11, C pf Chip Capacitors ATC100B0R4BT500XT ATC C pf Chip Capacitor ATC100B0R5BT500XT ATC C14, C15, C16, C, C18, C19, C, 10 μf Chip Capacitors C5750X7S2A106M230KB TDK C21, C22, C23 C24, C μf, 63 V lectrolytic Capacitors UVZ1J471MHD Nichicon R1, R2 2 Ω, 1/4 W Chip Resistors CRCW162R00FKA Vishay CB 0.0, r = 3.5 RO4350B Rogers 4

5 TYICAL CHARACTRISTICS MHz V DD = 28 Vdc, out = 63 W (Avg.), I DQ = 00 ma Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth η D G ps ARC IRL ACR Input Signal AR = % robability on CCDF f, FRQUNCY (MHz) Figure 3. Single Carrier Output eak to Average Ratio Compression (ARC) Broadband out = 63 Watts Avg. G ps, OWR GAIN (db) η D, DRAIN FFICINCY ACR (dbc) IRL, INUT RTURN LOSS (db) ARC (db) IMD, INTRMODULATION DISTORTION (dbc) V DD = 28 Vdc, out = 100 W (), I DQ = 00 ma Two-Tone Measurements, (f1 + f2)/2 = Center Frequency of 1960 MHz IM7-U IM5-U IM3-U IM5-L IM3-L IM7-L TWO-TON SACING (MHz) Figure 4. Intermodulation Distortion roducts versus Two Tone Spacing G ps, OWR GAIN (db) OUTUT COMRSSION AT 0.01% ROBABILITY ON CCDF (db) 1 0 V DD = 28 Vdc, I DQ = 00 ma, f = 1960 MHz Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth db = 34 W G ps db = 47 W db = 64 W ARC η D ACR η D, DRAIN FFICINCY ACR (dbc) 16-5 Input Signal AR = % robability on CCDF out, OUTUT OWR (WATTS) Figure 5. Output eak to Average Ratio Compression (ARC) versus Output ower -50 5

6 TYICAL CHARACTRISTICS MHz G ps, OWR GAIN (db) V DD = 28 Vdc, I DQ = 00 ma, Single-Carrier W-CDMA 3.84 MHz Channel Bandwidth 1995 MHz 1960 MHz 1930 MHz 1995 MHz 1960 MHz G ps 1930 MHz 1930 MHz 1995 MHz ACR 1960 MHz 16 Input Signal AR = % robability on CCDF out, OUTUT OWR (WATTS) AVG Figure 6. Single Carrier W CDMA ower Gain, Drain fficiency and ACR versus Output ower η D η D, DRAIN FFICINCY ACR (dbc) V DD = 28 Vdc in = 0 dbm I DQ = 00 ma Gain GAIN (db) 15 0 IRL (db) 13 IRL f, FRQUNCY (MHz) Figure 7. Broadband Frequency Response 6

7 f (MHz) Z source V DD = 28 Vdc, I DQ = 77 ma, ulsed CW, 10 μsec(on), 10% Duty Cycle Z in Max Output ower 1dB Z (1) load Gain (db) (dbm) (W) j j j j j j j j j AM/M f (MHz) Z source Z in Max Output ower 3dB Z (2) load Gain (db) (dbm) (W) j j j j j j j j j (1) Load impedance for optimum 1dB power. (2) Load impedance for optimum 3dB power. Z source = Measured impedance presented to the input of the device at the package reference plane. Z in = Impedance as measured from gate contact to ground. Z load = Measured impedance presented to the output of the device at the package reference plane. Figure 8. Load ull erformance Maximum ower Tuning AM/M V DD = 28 Vdc, I DQ = 77 ma, ulsed CW, 10 μsec(on), 10% Duty Cycle Max Drain fficiency 1dB f (MHz) Z source Z in Z (1) load Gain (db) (dbm) (W) AM/M j j j j j j j j j Max Drain fficiency 3dB f (MHz) Z source Z in Z (2) load Gain (db) (dbm) (W) AM/M j j j j j j j j j (1) Load impedance for optimum 1dB efficiency. (2) Load impedance for optimum 3dB efficiency. Z source = Measured impedance presented to the input of the device at the package reference plane. Z in = Impedance as measured from gate contact to ground. Z load = Measured impedance presented to the output of the device at the package reference plane. Figure 9. Load ull erformance Maximum Drain fficiency Tuning Input Load ull Tuner and Test Circuit Device Under Test Output Load ull Tuner and Test Circuit Z source Z in Z load 7

8 1dB TYICAL LOAD ULL CONTOURS 1960 MHz RAL (Ω) Figure 10. 1dB Load ull Output ower Contours (dbm) RAL (Ω) Figure 11. 1dB Load ull fficiency Contours RAL (Ω) Figure 12. 1dB Load ull Gain Contours (db).5-8 RAL (Ω) Figure 13. 1dB Load ull AM/M Contours NOT: = Maximum Output ower ower Gain = Maximum Drain fficiency Drain fficiency Linearity Output ower 8

9 3dB TYICAL LOAD ULL CONTOURS 1960 MHz RAL (Ω) Figure 14. 3dB Load ull Output ower Contours (dbm) RAL (Ω) Figure 15. 3dB Load ull fficiency Contours RAL (Ω) Figure 16. 3dB Load ull Gain Contours (db).5 2 RAL (Ω) Figure. 3dB Load ull AM/M Contours NOT: = Maximum Output ower ower Gain = Maximum Drain fficiency Drain fficiency Linearity Output ower 9

10 ALTRNATIV CHARACTRIZATION MHz C22 V DD C V GG C7 R1 C10* C18 C16 C6 C1 C3* C14* C4* C5* C8 C2 CUT OUT ARA C12* C13* C15* C19 C9 R2 C11* C21 V GG C V DD C23 AFT18S2903S Rev MHz *C3, C4, C5, C10, C11, C12, C13, C14 and C15 are mounted vertically. Figure 18. Test Circuit Component Layout MHz Table 6. Test Circuit Component Designations and Values MHz art Description art Number Manufacturer C1, C2, C10, C11 12 pf Chip Capacitors ATC100B1JT500XT ATC C3 8.2 pf Chip Capacitor ATC100B8R2CT500XT ATC C4 0.7 pf Chip Capacitor ATC100B0R7BT500XT ATC C5 0.8 pf Chip Capacitor ATC100B0R8BT500XT ATC C6, C7, C8, C9 10 μf Chip Capacitors GRM31CR61H106KA12L Murata C12, C pf Chip Capacitors ATC800B8R2BW500XT ATC C14, C pf Chip Capacitors ATC100B0R4BT500XT ATC C16, C, C18, C19, C, C21 10 μf Chip Capacitors C5750X7S2A106M230KB TDK C22, C μf, 63 V lectrolytic Capacitors MCGR63V477M13X26 RH Multicomp R1, R2 2 Ω, 1/4 W Chip Resistors CRCW162R00FKA Vishay CB 0.0, r = 3.5 RO4350B Rogers 10

11 ALTRNATIV CHARACTRIZATION MHz G ps, OWR GAIN (db) V DD = 28 Vdc, out = 63 W (Avg.), I DQ = 00 ma Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth η D G ps ARC IRL Input Signal AR = % robability on CCDF ACR f, FRQUNCY (MHz) η D, DRAIN FFICINCY Figure 19. Single Carrier Output eak to Average Ratio Compression (ARC) Broadband out = 63 Watts Avg. ACR (dbc) IRL, INUT RTURN LOSS (db) ARC (db) G ps, OWR GAIN (db) V DD = 28 Vdc, I DQ = 00 ma, Single-Carrier W-CDMA 3.84 MHz Channel Bandwidth, Input Signal AR = % robability on CCDF 50 η D MHz 1840 MHz 1880 MHz 40 G ps 18 ACR MHz 1840 MHz 1880 MHz 1805 MHz MHz MHz out, OUTUT OWR (WATTS) AVG. Figure. Single Carrier W CDMA ower Gain, Drain fficiency and ACR versus Output ower η D, DRAIN FFICINCY ACR (dbc) V DD = 28 Vdc in = 0 dbm I DQ = 00 ma Gain GAIN (db) 15 IRL 0 IRL (db) f, FRQUNCY (MHz) Figure 21. Broadband Frequency Response 11

12 f (MHz) Z source V DD = 28 Vdc, I DQ = 78 ma, ulsed CW, 10 μsec(on), 10% Duty Cycle Z in Max Output ower 1dB Z (1) load Gain (db) (dbm) (W) j j j j j j j j j AM/M f (MHz) Z source Z in Max Output ower 3dB Z (2) load Gain (db) (dbm) (W) j j j j j j j j j (1) Load impedance for optimum 1dB power. (2) Load impedance for optimum 3dB power. Z source = Measured impedance presented to the input of the device at the package reference plane. Z in = Impedance as measured from gate contact to ground. Z load = Measured impedance presented to the output of the device at the package reference plane. Figure 22. Load ull erformance Maximum ower Tuning AM/M V DD = 28 Vdc, I DQ = 78 ma, ulsed CW, 10 μsec(on), 10% Duty Cycle Max Drain fficiency 1dB f (MHz) Z source Z in Z (1) load Gain (db) (dbm) (W) AM/M j j j j j j j j j Max Drain fficiency 3dB f (MHz) Z source Z in Z (2) load Gain (db) (dbm) (W) AM/M j j j j j j j j j (1) Load impedance for optimum 1dB efficiency. (2) Load impedance for optimum 3dB efficiency. Z source = Measured impedance presented to the input of the device at the package reference plane. Z in = Impedance as measured from gate contact to ground. Z load = Measured impedance presented to the output of the device at the package reference plane. Figure 23. Load ull erformance Maximum Drain fficiency Tuning Input Load ull Tuner and Test Circuit Device Under Test Output Load ull Tuner and Test Circuit Z source Z in Z load 12

13 1dB TYICAL LOAD ULL CONTOURS 1840 MHz RAL (Ω) Figure 24. 1dB Load ull Output ower Contours (dbm) RAL (Ω) Figure 25. 1dB Load ull fficiency Contours RAL (Ω) RAL (Ω) Figure 26. 1dB Load ull Gain Contours (db) Figure 27. 1dB Load ull AM/M Contours ower Gain Drain fficiency Linearity Output ower NOT: = Maximum Output ower = Maximum Drain fficiency 13

14 3dB TYICAL LOAD ULL CONTOURS 1840 MHz RAL (Ω) Figure 28. 3dB Load ull Output ower Contours (dbm) RAL (Ω) Figure 29. 3dB Load ull fficiency Contours RAL (Ω) Figure 30. 3dB Load ull Gain Contours (db) RAL (Ω) Figure 31. 3dB Load ull AM/M Contours NOT: = Maximum Output ower ower Gain = Maximum Drain fficiency Drain fficiency Linearity Output ower 14

15 ACKAG DIMNSIONS 15

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17 RODUCT DOCUMNTATION, SOFTWAR AND TOOLS Refer to the following documents, software and tools to aid your design process. Application Notes AN1955: Thermal Measurement Methodology of RF ower Amplifiers ngineering Bulletins B212: Using Data Sheet Impedances for RF LDMOS Devices Software lectromigration MTTF Calculator RF High ower Model.s2p File Development Tools rinted Circuit Boards For Software and Tools, do a art Number search at and select the art Number link. Go to the Software & Tools tab on the part s roduct Summary page to download the respective tool. The following table summarizes revisions to this document. RVISION HISTORY Revision Date Description 0 May 13 Initial Release of Data Sheet

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