RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs

Transcription

1 Technical Data RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs These 350 W CW transistors are designed for industrial, scientific and medical (ISM) applications in the 700 to 1300 MHz frequency range. The transistors are capable of 350 W CW or pulse power in narrowband operation. Document Number: MRF8VP13350N Rev. 2, 02/2017 MRF8VP13350N MRF8VP13350GN TypicalPerformance: V DD =50Vdc Frequency (MHz) Signal Type 1300 (1) Pulse (100 µsec, 20% Duty Cycle) G ps (db) η D (%) P out (W) Peak MHz,350WCW,50V RF POWER LDMOS TRANSISTORS TypicalPerformance: In915MHzreferencecircuit,V DD =48Vdc Frequency (MHz) Signal Type G ps (db) η D (%) P out (W) 915 CW Load Mismatch/Ruggedness Frequency (MHz) Signal Type VSWR 1300 (1) Pulse (100 µsec, 20% Duty Cycle) >20:1atall Phase Angles P in (W) 9.6 Peak (3dB Overdrive) 1. Measured in 1300 MHz pulse narrowband test circuit. Features Internallyinputmatchedforeaseofuse Test Voltage Result 50 No Device Degradation Device can be used single--ended or in a push--pull configuration Qualifieduptoamaximumof50V DD operation Suitable for linear applications with appropriate biasing Integrated ESD protection Typical Applications 915 MHz industrial heating/welding systems 1300 MHz particle accelerators 900MHzTETRAbasestations OM-780-4L PLASTIC MRF8VP13350N OM-780G-4L PLASTIC MRF8VP13350GN GateA GateB 3 1 (Top View) Drain A 4 2 DrainB Note: Exposed backside of the package is the source terminal for the transistor. Figure 1. Pin Connections NXP B.V. 1

2 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--SourceVoltage V DSS 0.5,+100 Vdc Gate--SourceVoltage V GS 6.0,+10 Vdc StorageTemperatureRange T stg 65to+150 C CaseOperatingTemperatureRange T C 40to+150 C OperatingJunctionTemperatureRange (1,2) T J 40to+225 C Table 2. Thermal Characteristics Characteristic Symbol Value (2,3) Unit Thermal Resistance, Junction to Case CW:CaseTemperature93 C,350WCW,50Vdc,I DQ(A+B) =100mA,915MHz R θjc 0.24 C/W Thermal Impedance, Junction to Case Pulse: Case Temperature 76 C, 350 W Peak, 100 µsec Pulse Width, 20%DutyCycle,50Vdc,I DQ(A+B) =100mA,1300MHz Z θjc 0.04 C/W Table 3. ESD Protection Characteristics Human Body Model(per JESD22--A114) Machine Model(per EIA/JESD22--A115) Charge Device Model(per JESD22--C101) Table 4. Moisture Sensitivity Level Test Methodology Class 1C, passes 1500 V A, passes 100 V IV, passes 2000 V Test Methodology Rating Package Peak Temperature Unit Per JESD22--A113, IPC/JEDEC J--STD C Table5.ElectricalCharacteristics (T A =25 Cunlessotherwisenoted) OffCharacteristics (4) Zero Gate Voltage Drain Leakage Current (V DS =100Vdc,V GS =0Vdc) Characteristic Symbol Min Typ Max Unit I DSS 10 µadc Zero Gate Voltage Drain Leakage Current (V DS =48Vdc,V GS =0Vdc) Gate--Source Leakage Current (V GS =5Vdc,V DS =0Vdc) On Characteristics GateThresholdVoltage (4) (V DS =10Vdc,I D =460µAdc) Gate Quiescent Voltage (V DD =50Vdc,I DQ(A+B) =100mAdc,MeasuredinFunctionalTest) Drain--SourceOn--Voltage (4) (V GS =10Vdc,I D =1.3Adc) I DSS 1 µadc I GSS 1 µadc V GS(th) Vdc V GS(Q) Vdc V DS(on) Vdc 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to and search for AN Each side of device measured separately. (continued) 2

3 Table5.ElectricalCharacteristics (T A =25 Cunlessotherwisenoted)(continued) Characteristic Symbol Min Typ Max Unit FunctionalTests (1,2) (InNXPNarrowbandTestFixture,50ohmsystem)V DD =50Vdc,I DQ(A+B) =100mA,P out =350WPeak (70WAvg.),f=1300MHz,100µsecPulseWidth,20%DutyCycle PowerGain G ps db DrainEfficiency η D % Table6.LoadMismatch/Ruggedness (InNXPTestFixture,50ohmsystem)I DQ(A+B) =100mA Frequency (MHz) Signal Type VSWR 1300 Pulse (100 µsec, 20% Duty Cycle) Table 7. Ordering Information >20:1atall Phase Angles P in (W) TestVoltage,V DD Result 9.6 Peak (3 db Overdrive) 50 No Device Degradation Device Tape and Reel Information Package MRF8VP13350NR3 MRF8VP13350GNR3 R3Suffix=250Units,32mmTapeWidth,13--inchReel OM L OM--780G--4L 1. Part internally input matched. 2. Measurement made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull wing (GN) parts. 3

4 TYPICAL CHARACTERISTICS C, CAPACITANCE(pF) Measuredwith±30mV(rms)ac@1MHz V GS =0Vdc V DS,DRAIN-SOURCEVOLTAGE(VOLTS) C oss C rss Note: Each side of device measured separately. Figure 2. Capacitance versus Drain-Source Voltage NORMALIZEDV GS(Q) ma 2500 ma I DQ(A+B) =100mA 500mA T C,CASETEMPERATURE( C) I DQ (ma) Slope(mV/ C) V DD =50Vdc 100 Figure3.NormalizedV GS versusquiescent Current and Case Temperature 4

5 915MHzREFERENCECIRCUIT 5 4 (12.7cm 10.2cm) Table MHz Performance (In NXP Reference Circuit, 50 ohm system) V DD =48Vdc,I DQ(A+B) =100mA,T C =25 C Frequency (MHz) P in (W) G ps (db) η D (%) P out (W) Table 9. Load Mismatch/Ruggedness(In NXP Reference Circuit) Frequency (MHz) Signal Type VSWR P in (W) TestVoltage,V DD Result 915 CW >10:1atall Phase Angles 9.0 (3 db Overdrive) 48 No Device Degradation 5

6 915MHzREFERENCECIRCUIT 5 4 (12.7cm 10.2cm) V GG V DD C27 + C2 C3 C4 C8 R1 C10 C14 C15 C12* C16 C20 C17 C25* Q1 C1 C6 C7 C5 C9 R2 C11 C13* C21 C24 C22 C18 C23 C19 C26* MRF8VP13350N Rev.0 *C12, C13, C25 and C26 are mounted vertically. Figure 4. MRF8VP13350N Reference Circuit Component Layout 915 MHz Table 10. MRF8VP13350N Reference Circuit Component Designations and Values 915 MHz Part Description Part Number Manufacturer C1 62 pf Chip Capacitor ATC100B620JT500XT ATC C2, C5 4.7 pf Chip Capacitors ATC600F4R7BT250XT ATC C3, C7, C14, C15, C22, C23 10 µf Chip Capacitors GRM32ER61H106KA12L Murata C4, C6, C16, C17, C18, C19 47 pf Chip Capacitors ATC600F470JT250XT ATC C8, C9 3.9 pf Chip Capacitors ATC600F3R9BT250XT ATC C10, C11 12 pf Chip Capacitors ATC800B120JT500XT ATC C12, C pf Chip Capacitors ATC800B5R6CT500XT ATC C20, C pf Chip Capacitors ATC800B2R4BT500XT ATC C pf Chip Capacitor ATC800B2R7BT500XT ATC C25, C26 39 pf Chip Capacitors ATC600S390JT250XT ATC C µf Electrolytic Capacitor MCGPR63V477M13X26-RH Multicomp Q1 RF Power LDMOS Transistor MRF8VP13350N NXP R1, R2 6.2 Ω, 1/4 W Chip Resistors CRCW12066R20FKEA Vishay PCB RogersRO4350B,0.020,ε r =3.66 MTL 6

7 Z31 V SUPPLY Z30 C27 V BIAS C14 C3 C15 Z20 Z19 Z28 Z29 C4 Z18 Z27 C16 C17 R1 RF INPUT Z1 C2 Z8 Z9 Z10 C8 Z11 Z17 Z12 Z21 Z22 C10 Z23 C12 C20 Z24 Z25 C25 Z26 RF OUTPUT Z2 Z3 C5 C9 Z13 C11 C13 C21 C24 C26 Z6 Z5 Z7 Z4 Z16 Z15 C6 R2 Z14 Z32 Z33 C18 C19 Z34 C22 C1 C7 C23 Figure 5. MRF8VP13350N Reference Circuit Schematic 915 MHz Table 11. MRF8VP13350N Reference Circuit Microstrips 915 MHz Microstrip Description Microstrip Description Z Microstrip Z Taper Microstrip Z Taper Microstrip Z Taper Microstrip Z Taper Microstrip Z Taper Microstrip Z Taper Microstrip Z Microstrip Z Taper Microstrip Z Microstrip Z Taper Microstrip Z Microstrip Z Microstrip Z Microstrip Z Microstrip Z Microstrip Z Microstrip Z Microstrip Z Microstrip Z Taper Microstrip Z Microstrip Z Taper Microstrip Z Microstrip Z Microstrip Z Microstrip Z Microstrip Z Taper Microstrip Z Microstrip Z Taper Microstrip Z Taper Microstrip Z Microstrip Z Microstrip Z Microstrip Z Microstrip 7

8 TYPICAL CHARACTERISTICS 915 MHz REFERENCE CIRCUIT G ps,powergain(db) f, FREQUENCY(MHz) Figure 6. Power Gain, Power Added Efficiency and Output Power versus Frequency at a Constant Input Power PAE G ps V DD =48Vdc P in =3.0W 340 I DQ(A+B) =100mA P out PAE, POWER ADDED EFFICIENCY(%) P out,output POWER(WATTS) P out,outputpower(watts) V DD =48Vdc,P in =3.0W Detail A V GS,GATE-SOURCEVOLTAGE(VOLTS) V DD =48Vdc,P in =1.5W 2.5 f=915mhz P out,outputpower(watts) V DD =48Vdc P in =3.0W 0.5 Detail A V DD =48Vdc P in =1.5W f=915mhz V GS,GATE-SOURCEVOLTAGE(VOLTS) Figure 7. Output Power versus Gate-Source Voltage G ps,powergain(db) V DD =48Vdc I DQ(A+B) =100mA 928 MHz 915 MHz 902 MHz P in f=928mhz P out,outputpower(watts) Figure 8. Power Gain, Power Added Efficiency and Input Power versus Output Power and Frequency G ps 915 MHz 928 MHz 902 MHz PAE 902 MHz 915 MHz PAE, POWER ADDED EFFICIENCY(%) P in,input POWER(WATTS) 8

9 TYPICAL CHARACTERISTICS 915 MHz REFERENCE CIRCUIT G ps,powergain(db) V DD =48Vdc I DQ(A+B) =100mA f=915mhz 85 C 125 C 25 C P in PAE T A =25 C P out,outputpower(watts) G ps C 85 C 125 C 25 C 85 C Figure 9. Power Gain, Power Added Efficiency and Input Power versus Output Power and Temperature PAE, POWER ADDED EFFICIENCY(%) P in,input POWER(WATTS) 9

10 1300MHzNARROWBANDPRODUCTIONTESTFIXTURE 4 6 (10.2cm 15.2cm) Table MHzNarrowbandPerformance (1,2) (InNXPTestFixture,50ohmsystem)V DD =50Vdc,I DQ(A+B) =100mA, P out =350WPeak(70WAvg.),f=1300MHz,100µsecPulseWidth,20%DutyCycle Characteristic Symbol Min Typ Max Unit PowerGain G ps db DrainEfficiency η D % 1. Part internally input matched. 2. Measurement made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull wing (GN) parts. 10

11 1300MHzNARROWBANDPRODUCTIONTESTFIXTURE 4 6 (10.2cm 15.2cm) C16 C15 C17 C6 C19 C20 MRF8VP13350N Rev.2 C8 C10 C18 C2 C4 R2 C13 C1 R1 C3 C5 D59659 CUTOUTAREA R3 C9 C11 C24 C12 C14 C23 C21 C22 C7 C25 C26 Figure 10. MRF8VP13350N Narrowband Test Circuit Component Layout 1300 MHz Table 13. MRF8VP13350N Narrowband Test Circuit Component Designations and Values 1300 MHz Part Description Part Number Manufacturer C1, C13 10 pf Chip Capacitors ATC800B100JT500XT ATC C2, C3 6.2 pf Chip Capacitors ATC800B6R2BT500XT ATC C4, C5 8.2 pf Chip Capacitors ATC800B8R2CT500XT ATC C6, C7, C10, C pf Chip Capacitors ATC800B181JT300XT ATC C8, C9 4.7 pf Chip Capacitors ATC800B4R7CT500XT ATC C pf Chip Capacitor ATC800B1R0BT500XT ATC C pf Chip Capacitor ATC800B1R7BT500XT ATC C15, C21 47 µf Tantalum Capacitors 593D476X9016D2TE3 Vishay/Sprague C16, C µf Chip Capacitors C1206C104K1RACTU Kemet C17, C µf Chip Capacitors C1210C224K1RACTU Kemet C18, C µf Chip Capacitors C1206C104K1RACTU Kemet C19, C µf Chip Capacitors 2225X7R225KT3AB ATC C20, C µf, 63 V Electrolytic Capacitors MCRH63V337M13X21-RH Multicomp R1 100 Ω, 1/4 W Chip Resistor CRCW RFKEA Vishay R2, R3 200 Ω, 1/4 W Chip Resistors CRCW RFKEA Vishay PCB ArlonAD255A,0.030,ε r =2.55 D59659 MTL 11

12 12 RF INPUT Z1 C1 Z2 Z3 V GG Z21 Z19 + C15 C16 C17 C6 Z17 Z4 Z7 Z9 Z11 Z13 R1 C2 C4 Z8 Z10 Z12 Z14 Z15 Z16 DUT Z25 Z23 Z27 Z31 Z29 C10 Z33 R2 + C18 C19 C20 Z35 Z37 Z39 C8 R3 V DD Z41 Z42 C12 C13 Z43 Z44 C14 RF OUTPUT Z5 Z6 C3 C5 Z24 Z32 Z34 Z36 Z38 Z40 Z18 Z26 C9 Z22 Z20 V GG + C21 C22 C23 C7 Z28 Z30 + V DD C11 C24 C25 C26 Figure 11. MRF8VP13350N Narrowband Test Circuit Schematic 1300 MHz Table 14. MRF8VP13350N Narrowband Test Circuit Microstrips 1300 MHz Microstrip Description Microstrip Description Z Microstrip Z17, Z Microstrip Z Microstrip Z19, Z Microstrip Z3, Z Microstrip* Z21, Z Microstrip Z4, Z Microstrip* Z23, Z Microstrip Z7, Z Microstrip Z25, Z Microstrip Z9, Z Microstrip Z27, Z Microstrip Z11, Z Microstrip Z29, Z Microstrip Z13, Z Microstrip Z31, Z Microstrip Z15, Z Microstrip * Line length include microstrip bends Microstrip Description Z33, Z Microstrip Z35, Z Microstrip Z37, Z Microstrip Z39, Z Microstrip* Z Microstrip Z Microstrip Z Microstrip Z Microstrip

13 TYPICAL CHARACTERISTICS 1300 MHz P out,outputpower(watts)peak V DD =50Vdc,f=1300MHz PulseWidth=100µsec,20%DutyCycle P in =5W P in =2.5W V GS,GATE-SOURCEVOLTAGE(VOLTS) Figure 12. Output Power versus Gate-Source Voltage at a Constant Input Power P out,outputpower(dbm)peak V DD =50Vdc,I DQ(A+B) =100mA,f=1300MHz PulseWidth=100µsec,20%DutyCycle P in,inputpower(dbm) G ps,powergain(db) V DD =50Vdc,I DQ(A+B) =100mA,f=1300MHz PulseWidth=100µsec,20%DutyCycle I DQ(A+B) =900mA 600mA 300mA mA mA 900mA G ps 300mA mA P out,outputpower(watts)peak η D η D, DRAINEFFICIENCY(%) f (MHz) P1dB (W) P3dB (W) Figure 14. Power Gain and Drain Efficiency versus Output Power and Quiescent Current Figure 13. Output Power versus Input Power G ps,powergain(db) V DD =50Vdc,I DQ(A+B) =100mA,f=1300MHz PulseWidth=100µsec,20%DutyCycle -40 C -40 C 85 C T C =25 C η D P out,outputpower(watts)peak 25 C G ps Figure 15. Power Gain and Drain Efficiency versus Output Power C η D, DRAINEFFICIENCY(%) G ps,powergain(db) I DQ(A+B) =100mA,f=1300MHz,PulseWidth=100µsec 20% Duty Cycle 50 V DD =30V V 40V P out,outputpower(watts)peak 45V V Figure 16. Power Gain versus Output Power and Drain-Source Voltage

14 1300 MHz NARROWBAND PRODUCTION TEST FIXTURE f MHz Z source Ω Z load Ω j j3.9 Z source = Testcircuitimpedanceasmeasuredfrom gate to gate, balanced configuration. Z load = Testcircuitimpedanceasmeasuredfrom drain to drain, balanced configuration. 50Ω Input Matching Network + Device Under Test - Output Matching Network 50Ω - + Z source Z load Figure 17. Narrowband Series Equivalent Source and Load Impedance 1300 MHz 14

15 4X (4.70) 4X Solder Pads (20.32) (1) (1) (10.39) (9.88) (8.89) (1) (20.70) Inches (mm) 1. Slot dimensions are minimum dimensions and exclude milling tolerances. Figure18.PCBPadLayoutforOM-780-4L (18.80) (8.89) (8.26) (10.41) (12.95) Solder pad with thermal via structure. 4X (4.70) Inches (mm) Figure19.PCBPadLayoutforOM-780G-4L 15

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22 PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following resources to aid your design process. Application Notes AN1907: Solder Reflow Attach Method for High Power RF Devices in Over--Molded Plastic Packages AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins EB212: Using Data Sheet Impedances for RF LDMOS Devices Software Electromigration MTTF Calculator RFHighPowerModel.s2pFile Development Tools Printed Circuit Boards To Download Resources Specific to a Given Part Number: 1. Go to 2.Searchbypartnumber 3. Click part number link 4.Choosethedesiredresourcefromthedropdownmenu The following table summarizes revisions to this document. REVISION HISTORY Revision Date Description 0 May 2015 Initial Release of Data Sheet 1 Oct Table 2, Thermal Characteristics: added thermal resistance data for the 915 MHz reference circuit, p. 2 2 Feb Table 10, MRF8VP13350N Reference Circuit Component Designations and Values 915 MHz: updated Q1tocorrectpartnumber,p.6 Fig.11,NarrowbandTestCircuitSchematic 1300MHz:correctedC6,C7,C10andC11biaslinechip capacitor connection, p

23 HowtoReachUs: Home Page: nxp.com Web Support: nxp.com/support Information in this document is provided solely to enable system and software implementers to use NXP products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. NXP reserves the right to make changes without further notice to any products herein. NXP makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does NXP assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters thatmaybeprovidedinnxpdatasheetsand/orspecificationscananddovaryin different applications, and actual performance may vary over time. All operating parameters, including typicals, must be validated for each customer application by customer s technical experts. NXP does not convey any license under its patent rights nor the rights of others. NXP sells products pursuant to standard terms and conditions of sale, which can be found at the following address: nxp.com/salestermsandconditions. NXP, the NXP logo, Freescale, and the Freescale logo are trademarks of NXP B.V. All other product or service names are the property of their respective owners NXPB.V. NXP Rev. 2, Semiconductors 02/2017 Document Number: MRF8VP13350N 23