rn Loss (db) -10 Retu Characteristic Symbol Min Typ Max Unit

Transcription

1 PTMA22M Wideband RF LDMOS Integrated Power Amplifier W, 28 V, MHz Description The PTMA22M is a wideband, matched, -watt, 2-stage LDMOS integrated amplifi er intended for wideband driver applications in the 1800 to 20 MHz band. This device is offered in a -lead thermallyenhanced overmolded package for cool and reliable operation. PTMA22M Package PG-DSO--63 Gain (db) Broadband Performance V DD = 28 V, I DQ1 = 80 ma, I DQ2 = 160 ma fixture tuned for MHz Gain Return Loss Frequency (MHz) rn Loss (db) Retu Features Designed for wide RF bandwidth and low memory effects Broadband input on-chip matching Typical two-carrier WCDMA performance at 21 MHz, 28 V, 7 W avg. - Gain = 28.5 db - Power Added Effi ciency = 33 % - IMD3 = 32 dbc Typical CW performance at 21 MHz, 28 V - Output power at P 1dB ~ W - Effi ciency > 49% Integrated ESD protection. Meets HBM Class 1B (minimum), per JESD22-A114F. Capable of handling :1 28 V, W (CW) output power Thermally-enhanced RoHS-compliant package RF Characteristics Two-carrier WCDMA Specifications (not subject to production test verified by design/characterization in Infineon test fixture) V DS = 28 V, I DQ1 = 80 ma, I DQ2 = 160 ma, ƒ = MHz, P OUT = 7 W average Characteristic Symbol Min Typ Max Unit Gain G ps 28.5 db Power Added Effi ciency 33 % Input Return Loss IRL 14 db Adjacent Channel Power Ratio ACPR 36 dbc Third Order Intermodulation Distortion IMD3 32 dbc Spurs Load 3:1 60 dbc Gain Flatness ΔG 0.43 db All published data at T CASE = C unless otherwise indicated ESD: Electrostatic discharge sensitive device observe handling precautions! Data Sheet 1 of Rev. 09,

2 PTMA22M RF Characteristics (cont.) Two-tone Measurement (tested in Infi neon test fi xture) V DD = 28 V, I DQ1 = 80 ma, I DQ2 = 160 ma, P OUT = 8 W AVG, ƒ = 21 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain G ps db Drain Effi ciency η D % Third Order Intermodulation Distortion IMD dbc Input Return Loss IRL 14 db DC Characteristics Stage 1 Characteristic Conditions Symbol Min Typ Max Unit Drain Leakage Current V DS = 28 V, V GS = 0 V I DSS 1.0 µa V DS = 63 V, V GS = 0 V I DSS.0 µa On-State Resistance V GS = V, V DS = 0.1 V R DS(on) 3.5 Ω Operating Gate Voltage V DS = 28 V, I DQ = 80 ma V GS V Gate Leakage Current V GS = V, V DS = 0 V I GSS 1.0 µa Stage 2 Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage V GS = 0 V, I DS = ma V (BR)DSS 65 V Drain Leakage Current V DS = 28 V, V GS = 0 V I DSS 1.0 µa V DS = 63 V, V GS = 0 V I DSS.0 µa On-State Resistance V GS = V, V DS = 0.1 V R DS(on) 0.6 Ω Operating Gate Voltage V DS = 28 V, I DQ = 160 ma V GS V Gate Leakage Current V GS = V, V DS = 0 V I GSS 1.0 µa Data Sheet 2 of Rev. 09,

3 PTMA22M Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage V DSS 65 V Gate-Source Voltage V GS 0.5 to +12 V Junction Temperature T J 0 C Input Power P IN dbm Total Device Dissipation P D 70 W Above C derate by 0.4 W/ C Storage Temperature Range T STG to +0 C Thermal Resistance (T CASE = 70 C, W CW) Stage 1 RθJC.7 C/W Stage 2 RθJC 2.9 C/W Moisture Sensitivity Level Level Test Standard Package Temperature Unit 3 IPC/JEDEC J-STD C Ordering Information Type and Version Order Code Package and Description Shipping PTMA22M V1 PTMA22MV1AUMA1 PG-DSO--63, molded plastic Tape & Reel, 0 pcs PTMA22M V1 R500 PTMA22MV1R500AUMA1 PG-DSO--63, molded plastic Tape & Reel, 500 pcs Data Sheet 3 of Rev. 09,

4 PTMA22M Typical Performance, circuit tuned for 21 MHz (data taken in a production test fixture) CW Performance V DD = 28 V, I DQ1 = 80 ma, I DQ2 = 160 ma for 21, 21, 2170 MHz WCDMA Performance V DD = 28 V, I DQ1 = 80 ma, I DQ2 = 160 ma, series show 21, 21, 2170 MHz 55 - Gain (db) Gain 21 MHz 21 MHz 2170 MHz MHz 21 MHz 2170 MHz ACPR PR (dbc) AC Two-tone Drive-up V DD = 28 V, I DQ1 = 80 ma, I DQ2 = 160 ma For 21, 21, 2170 MHz Two-carrier WCDMA Performance V DD = 28 V, I DQ1 = 80 ma, I DQ2 = 160 ma, series show 21, 21, 2170 MHz 5 21 MHz 21 MHz 2170 MHz IMD IM MD3 (dbc) 21 MHz 21 MHz 2170 MHz IMD IMD D3 (dbc) Output Power, avg. ( dbm ) Data Sheet 4 of Rev. 09,

5 PTMA22M Typical Performance 21 MHz (cont.) Two-carrier WCDMA Performance V DD = 28 V, I DQ1 = 80 ma, I DQ2 = 160 ma, series show 21, 21, 2170 MHz Two-carrier WCDMA Performance V DD = 28 V, I DQ1 = 80 ma, I DQ2 = 160 ma, ƒ = 21 MHz Power Ad dded Efficiency (%) 21 MHz 21 MHz 2170 MHz ACPR AC CPR (dbc) C C 90 C ACPR AC CPR (dbc) Six-carrier TD-SCDMA Performance V DD = 28 V, I DQ1 = 80 ma, I DQ2 = 160 ma - ACPR 21 MHz 21 MHz 2170 MHz AC CPR (dbc) Data Sheet 5 of Rev. 09,

6 PTMA22M Broadband Circuit Impedance 21 MHz Frequency Z Load MHz R jx WAVELENGTHS <--- WAVELENGTHS TOWARD LOAD - D Z Load IN 0.0 S Z 0 = 50 Z Load 2170 MHz 21 MHz 0.2 See next page for reference circuit information Data Sheet 6 of Rev. 09,

7 a22 m _bd_ PTMA22M Reference Circuit tuned for 21 MHz VG1 R3 R1 0 VD1 Q1 C7 μf C1 0μF 50V J1 C8 C2 μf C3 1 C9 0. C C6 0.5pF C C5 DUT PTMA22M C 12 pf C 2.2pF 6 C16 0. C17 C18 μf C C21 1.0pF C19 0μF 50V J2 VD2 VG2 R4 R2 0 Q2 C11 μf C12 C13 0. C14 Reference circuit schematic for ƒ = 21 MHz Circuit Assembly Information DUT PTMA22M, LDMOS IC Reference Fixture Part No. LTN/PTMA22M PCB Rogers RO40: 0.76 mm [.0"] thick, εr = 3.48, 1 oz. copper Find Gerber fi les for this reference fi xture on the Infi neon Web site at ( Microstrip Electrical Characteristics Dimensions: L x W (mm) Dimensions: L x W (in.) at 21 MHz λ, 50 Ω x x λ, 50 Ω 9. x x λ, 11 Ω* 4.09 x x λ, 61 Ω.91 x x λ, 71 Ω 0.38 x x λ, 71 Ω 0.38 x x λ, 34 Ω 7.47 x x λ, 44 Ω. x x λ, 50 Ω 4.95 x x *Calculated at.5 Data Sheet 7 of Rev. 09,

8 PTMA22M Reference Circuit 21 MHz (cont.) VD1 C17 VD2 C2 C1 C C16 C18 C19 C3 C4 C5 RF_IN C9 C8 C6 C C14 C21 C C22 RF_OUT C7 C13 C12 C11 VG1 VG2 R3 R4 R1 Q1 R2 Q2 PTMA22 M a22 m_ cd_ Reference circuit assembly diagram (not to scale) Component Description Suggested Manufacturer P/N or Comment C3, C8, C12, C17 Ceramic capacitor, 1 µf Digi-Key ND C4, C9, C13, C16 Capacitor, 0.1 µf Digi-Key PCC4BCT-ND C2, C7, C11, C18 Tantalum capacitor, µf, 50 V Digi-Key P5571-ND C1, C19 Electrolytic capacitor, 0 µf, 50 V Digi-Key PCE3718CT-ND C6 Ceramic capacitor, 0.5 pf ATC 600S 0R5 CT C Ceramic capacitor, 2.2 pf ATC 600S 2R2 CT C21 Ceramic capacitor, 1.0 pf ATC 600S 1R0 CT C5, C, C14, C, C22 Ceramic capacitor, 12 pf ATC 600S 1 JT Q1, Q2 Transistor Infi neon Technologies BCP56 R1, R2 Chip resistor, 0 ohms Digi-Key P00ECT-ND R3, R4 Potentiometer, 2 k ohms Digi-Key 3224W-2ETR-ND Data Sheet 8 of Rev. 09,

9 PTMA22M Typical Performance, circuit tuned for 18 MHz (data taken in a production test fixture) CW Performance V DD = 28 V, I DQ1 = 70 ma, I DQ2 = 1 ma, ƒ = 1805, 18, 1880 MHz Two-tone Drive-up V DD = 28 V, I DQ1 = 70 ma, I DQ2 = 1 ma, ƒ = 1805, 18, 1880 MHz Ga ain (db) Gain 1805 MHz 18 MHz 1880 MHz Power Add ded Efficiency (%) MHz 18 MHz 1880 MHz IMD IM MD3 (dbc) Output Power, avg. (dbm) Edge Modulation Spectrum Performance V DD = 28 V, I DQ1 = 70 ma, I DQ2 = 160 ma, series are at selected frequencies Edge - EVM V DD = 28 V, I DQ1 = 70 ma, I DQ2 = 160 ma, series are at selected frequencies MHz MHz MHz 0 khz 600 khz Modulation Spectrum (dbc) Power Ad dded Efficiency (%) MHz MHz MHz EVM Error Vecto or Magnitude (%) Data Sheet 9 of Rev. 09,

10 PTMA22M Broadband Circuit Impedance 18 MHz Frequency Z Load MHz R jx IN WAVELENGTHS TOW <--- WAVELENGTHS TOWARD LOAD - D Z Load S 0.0 Z 0 = 50 Z Load 00 MHz 1800 MHz 0 3 Data Sheet of Rev. 09,

11 a22 m _bd_ PTMA22M Reference Circuit, tuned for 18 MHz VG1 R3 R1 0 VD1 J1 C7 C1 0μF 50V 1 C8 μf C2 L1 2.7nH C6 1pF C3 μf C9 0. C C C5 DUT PTMA22M C 1.2pF C 12 pf 6 C16 0. C17 μf C21 3.3pF 7 C18 C22 8 C19 0μF 50V VD2 Q1 VG2 R4 R2 0 Q2 C11 C12 μf C13 0. C14 Reference circuit schematic for ƒ = 18 MHz Circuit Assembly Information DUT PTMA22M, LDMOS IC Test Fixture Part No. PCB LTN/PTMA22M 18 Rogers RO40: 0.76 mm [.0"] thick, εr = 3.48, 1 oz. copper Fnd Gerber fi les for this test fi xture on the Infi neon Web site at ( Microstrip Electrical Characteristics Dimensions: L x W (mm) Dimensions: L x W (in.) at 18 MHz λ, 50 Ω 7.59 x x λ, 50 Ω x x λ, 11 Ω* 4.09 x x λ, 61 Ω.91 x x λ, 71 Ω 0.38 x x λ, 44 Ω 1.73 x x λ, 44 Ω x x λ, 50 Ω 4.95 x x *Calculated at.5 Data Sheet 11 of Rev. 09,

12 PTMA22M Reference Circuit 18 MHz (cont.) VD1 C17 VD2 C2 C3 C4 C1 C C16 C18 C19 RF_IN L1 C9 C5 C C21 C22 RF_OUT C6 C8 C14 C C7 C13 C12 C11 VG1 VG2 R3 R4 R1 Q1 R2 Q2 PTMA22M a22 m_ cd_ Reference circuit assembly diagram (not to scale) Component Description Suggested Manufacturer P/N or Comment C3, C8, C12, C17 Ceramic capacitor, 1 µf Digi-Key ND C4, C9, C13, C16 Capacitor, 0.1 µf Digi-Key PCC4BCT-ND C2, C7, C11, C18 Tantalum capacitor, µf, 50 V Digi-Key P5571-ND C1, C19 Electrolytic capacitor, 0 µf, 50 V Digi-Key PCE3718CT-ND C6 Ceramic capacitor, 1.0 pf ATC 600S 1R0 CT C Ceramic capacitor, 1.2 pf ATC 600S 1R2 CT C21 Ceramic capacitor, 3.3 pf ATC 600S 3R3 CT C5, C, C14, C, C22 Ceramic capacitor, 12 pf ATC 600S 1 JT Q1, Q2 Transistor Infi neon Technologies BCP56 R1, R2 Chip resistor, 0 ohms Digi-Key P00ECT-ND R3, R4 Potentiometer, 2 k ohms Digi-Key 3224W-2ETR-ND L1 Inductor, 2.7 nh Digi-Key PCD1287CT-ND Data Sheet 12 of Rev. 09,

13 a22 m- v1_pd_ PTMA22M Pinout Diagram (top view) V DD V DD2 RF OUT 4 17 V DD2 RF OUT RF IN 5 16 V DD2 RF OUT RF IN 6 V DD2 RF OUT VG VDD2 RFOUT V G V DD2 RF OUT Source/ground: plated copper heatslug on backside of package (Find the latest and most complete information about products and packaging at the Infi neon Internet page ( neon.com/rfpower) Data Sheet 13 of Rev. 09,

14 PTMA22M Package Outline Specifications Package PG-DSO--63 Diagram Notes unless otherwise specifi ed: 1. Interpret dimensions and tolerances per ASME Y14.5M Package dimensions: 11.0 mm by.9 mm by 3. mm. 3. JEDEC drawing number: MO Does not include plastic or metal protrusion of 0. mm max per side. 5. Does not include dambar protrusion; maximum allowable dambar protrusion shall be 0.08 mm. 6. Bottom metallization. 7. Sn plating (matte): 5 micron [ microinch]. Refer to Application Note Recommendations for Printed Circuit Board Assembly of Infi neon DSO and SSOP Packages for additional information. Data Sheet 14 of Rev. 09,

15 PTMA22M V1 Revision History Revision Date Data Sheet Page Subjects (major changes since last revision) Preliminary all Preliminary specifi cation for new product in development Production all Add 18 MHz characterization Production 14 Update pinout diagram Production 3; 14 Add moisture sensitivity information; update package outline notes Production 6, 11 Recalculate electrical characteristics Production 4, 6 Removed graphs Production 2 Clarify DC characteristics per stage Production 2 Revise RF table to better refl ect test specifi cations Production 3 Add shipping option. We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: (highpowerrf@infineon.com) To request other information, contact us at: (1-877-GO-LDMOS) USA or International Edition Published by Infineon Technologies AG Neubiberg, Germany 09 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infi neon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infi neon Technologies Offi ce ( Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infi neon Technologies Offi ce. Infi neon Technologies components may be used in life-support devices or systems only with the express written approval of Infi neon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet of Rev. 09,