Drain Efficiency (%) c270101m-2.1-gr1c. Characteristic Symbol Min Typ Max Unit

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Dominick Horn
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This LDMOS transistor offers excellent gain, efficiency and linearity performance in a small overmolded plastic package.

84 MHz bandwidth 26 28 3 32 34 36 38 4 7 6 5 4 3 1 Drain (%) Features Unmatched input and output Typical CW performance, 217 MHz, 28 V - Output power @ P 1dB = 1 W - = db - = 6% Typical two-carrier

1 c2711m-2.1-gr1c High Power RF LDMOS Field Effect Transistor 1 W, 28 V, 9 27 MHz Description The is an unmatched 1-watt LDMOS FET suitable for power amplifier applications with frequencies from 9 MHz to 27 MHz. This LDMOS transistor offers excellent gain, efficiency and linearity performance in a small overmolded plastic package. Package PG-SON V DD = 28 V, I DQ = 1 ma, ƒ = 217 MHz, 1 MHz carrier spacing, 3.84 MHz bandwidth Drain (%) Features Unmatched input and output Typical CW performance, 217 MHz, 28 V - Output P 1dB = 1 W - = db - = 6% Typical two-carrier WCDMA performance, 217 MHz, 28 V, 8 db PAR - Output power = 1.3 W avg - = 21 db - = 21% - ACPR = MHz Capable of handling 1:1 28 V, 1 W (CW) output power Integrated ESD protection Pb-free and RoHS compliant RF Characteristics Two-carrier WCDMA Specifications (tested in Infineon production test fixture) V DD = 28 V, I DQ = 1 ma, = 2.4 W avg, ƒ = 217 MHz 3GPP WCDMA signal, 3.84 MHz channel bandwidth, 8 db CCDF Characteristic Symbol Min Typ Max Unit G ps db All published data at T CASE = C unless otherwise indicated ESD: Electrostatic discharge sensitive device observe handling precautions! Data Sheet 1 of Rev. 4.2, -12

2 DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage V GS = V, I DS = 1 ma V( BR)DSS 65 V Drain Leakage Current V DS = 28 V, V GS = V I DSS 1 µa V DS = 63 V, V GS = V I DSS 1 µa Gate Leakage Current V GS = 1 V, V DS = V I GSS 1 µa On-State Resistance V GS = 1 V, V DS =.1 V R DS(on) 1 W Operating Gate Voltage V DS = 28 V, I DQ = 1 ma V GS V Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage V DSS 65 V Gate-Source Voltage V GS 6 to +1 V Operating Voltage V DD to +32 V Junction Temperature T J 5 C Storage Temperature Range T STG 65 to + C Thermal Resistance (T CASE = 7 C, 12 W CW) RqJC 4.4 C/W Moisture Sensitivity Level Level Test Standard Package Temperature Unit 3 IPC/JEDEC J-STD- 26 C ESD Ratings Test Type Rated Class Standard Human Body Model (HBM) 1B ANSI/ESDA/JEDEC JS 1 Charge Device Model (CDM) II JESD -C11 Ordering Information Type Order Code Package and Description Shipping V1 R1K V1R1KXUMA1 PG-SON-1, molded plastic, SMD Tape & Reel, 1 pcs Data Sheet 2 of Rev. 4.2, -12

3 Evaluation Boards Order Code Frequency Description LTN/ V MHz Class AB with combined outputs, R436,.58 mm thick LTN/ E MHz Class AB with combined outputs, R436,.58 mm thick LTN/ E MHz Class AB with combined outputs, R436,.58 mm thick LTN/ E MHz Class AB with combined outputs, R436,.58 mm thick LTN/ E6 5 8 MHz Class AB with combined outputs, R436,.58 mm thick LTN/ E7 MHz Class AB with combined outputs, R436,.58 mm thick Find Gerber files for these reference fixtures on the Infineon Web site at See next page for Typical RF Performance Data Sheet 3 of Rev. 4.2, -12

4 c2711m-2.1-gr1a c2711m-2.1-gr1b c2711m-2.1-gr2b Typical RF Performance, MHz (data taken in production test fixture) 23 V DD = 28 V, I DQ = 1 ma, ƒ = 211 MHz 1 MHz carrier spacing, 3.84 MHz bandwidth 7 23 V DD = 28 V, I DQ = 1 ma, ƒ = 2 MHz 1 MHz carrier spacing, 3.84 MHz bandwidth Drain (%) Drain (%) IMD (dbc), ACPR (dbc) V DD = 28 V, I DQ = 1 ma, ƒ = 211 MHz 1 MHz carrier spacing, 3.84 MHz bandwidth IMD Low IMD Up ACPR Drain (%) IMD (dbc), ACPR (dbc) V DD = 28 V, I DQ = 1 ma, ƒ = 2 MHz 1 MHz carrier spacing, 3.84 MHz bandwidth IMD Low IMD Up ACPR Drain (%) c2711m-2.1-gr2a 5 Data Sheet 4 of Rev. 4.2, -12

5 c2711m-2.1-gr2c c2711m-2.1-gr5b c2711m-2.1-gr5a c2711m-2.1-gr5c Typical RF Performance, MHz (cont.) IMD (dbc), ACPR (dbc) V DD = 28 V, I DQ = 1 ma, ƒ = 217 MHz 1 MHz carrier spacing, 3.84 MHz bandwidth IMD Low IMD Up ACPR Drain (%) Power at selected supply voltage I DQ = 1 ma, ƒ = 211 MHz VDD = V VDD = 28 V VDD = 32 V (%) at selected supply voltage I DQ = 1 ma, ƒ = 2 MHz at selected supply voltage I DQ = 1 ma, ƒ = 217 MHz Power VDD = V VDD = 28 V VDD = 32 V (%) Power VDD = V VDD = 28 V VDD = 32 V (%) Data Sheet 5 of Rev. 4.2, -12

6 c2711m-2.1-gr3 c2711m-2.1-gr6_v2 c2711m-2.1-gr4 Typical RF Performance, MHz (cont.) IMD, Up and Low (dbc) V DD = 28 V, I DQ = 1 ma 1 MHz carrier spacing, 3.84 MHz BW 217 IMD-U 2 IMD-U 211 IMD-U 217 IMD-L 2 IMD-L 211 IMD-L V DD = 28 V, I DQ = 1 ma 211 MHz 2 MHz 217 MHz (%) Small Signal and Input Return Loss V DD = 28 V, I DQ = 1 ma Input Return Loss Frequency (MHz) Input Return Loss (db) Data Sheet 6 of Rev. 4.2, -12

7 Broadband Circuit Impedance Freq [MHz] Z Source W Z Load W R jx R jx Z Source D Z Load G S Load Pull Performance Pulsed CW signal: µsec, 1% duty cycle; 28 V, 1 ma Class AB Max Output Power Max PAE Freq [MHz] Zs Zl [db] [dbm] PAE [%] P 1dB Zl [db] [dbm] PAE [%] Reference Circuit, 21 MHz DUT V1 Reference Circuit No. LTN/ V1 Order Code LTNV1TOBO1 PCB Rogers RO435,.58 mm [."] thick, 2 oz. copper, ε r = 3.66 Find Gerber files for this reference fixture on the Infineon Web site at Data Sheet 7 of Rev. 4.2, -12

8 p t f c m _ c d _ Reference Circuit, 21 MHz (cont.) VDD C18 VGG C C17 R12 C13 R11 C C16 RF_IN DUT RF_OUT C11 C12 _5 21 MHZ RO435,. (9) Assembly diagram for reference circuit LTN/ V1, 21 MHz (not to scale) Components Information Component Description Manufacturer P/N C11 Capacitor, 1.5 pf ATC ATC6F1R5CW C12, C13, Capacitor, 12 pf ATC ATC6F1JW C16, C17 C Capacitor, 1. µf TDK Corporation C4532X7R2AM23KA C Capacitor, 1.2 pf ATC ATC6F1R2CW C18 Capacitor, 1 µf Taiyo Yuden UMK3C716MM-T R11, R12 Resistor, 1 ohms Panasonic Electronic Components ERJ-8GEYJ1V Data Sheet 8 of Rev. 4.2, -12

9 c2711m-9-gr1b RF Characteristics Two-carrier WCDMA Characteristics (not subject to production test) V DD = 28 V, I DQ = 1 ma, = 1.3 W avg, ƒ 1 = MHz, ƒ 2 = MHz, 3GPP WCDMA signal, 3.84 MHz channel bandwidth, 8 db CCDF Characteristic Symbol Min Typ Max Unit G ps 23 db Drain h D % Intermodulation Distortion IMD 39 dbc Typical RF Performance, 9 96 MHz (data taken in production test fixture) V DD = 28 V, I DQ = 1 ma, ƒ = 9 MHz 1 MHz carrier spacing, 3.84 MHz BW 7 V DD = 28 V, I DQ = 1 ma, ƒ = 94 MHz 1 MHz carrier spacing, 3.84 MHz BW Drain (%) c2711m-9-gr1a Drain (%) Data Sheet 9 of Rev. 4.2, -12

10 c2711m-9-gr1c c2711m-9-gr2a c2711m-9-gr2c Typical RF Performance, 9 96 MHz (cont.) V DD = 28 V, I DQ = 1 ma, ƒ = 96 MHz. 1 MHz carrier spacing, 3.84 MHz BW Drain (%) IMD (dbc), ACPR (dbc) V DD = 28 V, I DQ = 1 ma, ƒ = 9 MHz 1 MHz carrier spacing, 3.84 MHz BW IMD Low IMD Up ACPR Drain (%) IMD (dbc), ACPR (dbc) V DD = 28 V, I DQ = 1 ma, ƒ = 94 MHz 1 MHz carrier spacing, 3.84 MHz BW IMD Low IMD Up ACPR Drain (%) IMD (dbc), ACPR (dbc) V DD = 28 V, I DQ = 1 ma, ƒ = 96 MHz 1 MHz carrier spacing, 3.84 MHz BW IMD Low IMD Up ACPR c2711m-9-gr2b Drain (%) Data Sheet 1 of Rev. 4.2, -12

11 c2711m-9-gr6_v2 c2711m-9-gr4 c2711m-9-gr5a Typical RF Performance, 9 96 MHz (cont.) V DD = 28 V, I DQ = 1 ma 1 MHz carrier spacing, 3.84 MHz BW V DD = 28 V, I DQ = 1 ma IMD (dbc) IMDL 9 IMDU 94 IMDL 94 IMDU 96 IMDL 96 IMDU MHz 94 MHz 9 MHz (%) c2711m-9-gr3 6 Small Signal & Input Return Loss V DD = 28 V, I DQ = 1 ma at selected supply voltage I DQ = 1 ma, ƒ = 9 MHz Input Return Loss Frequency (MHz) -5 Input Return Loss (db) Power V DD = V V DD = 28 V V DD = 32 V (%) Data Sheet 11 of Rev. 4.2, -12

12 c2711m-9-gr5b c2711m-9-gr5c Typical RF Performance, 9 96 MHz (cont.) at selected supply voltage I DQ = 1 ma, ƒ = 94 MHz at selected supply voltage I DQ = 1 ma, ƒ = 96 MHz Power V DD = V V DD = 28 V V DD = 32 V (%) Power V DD = V V DD = 28 V V DD = 32 V (%) Broadband Circuit Impedance Freq [MHz] Z Source W Z Load W R jx R jx Z Source D Z Load G S Load Pull Performance Pulsed CW signal: µsec, 1% duty cycle; 28 V, 1 ma Class AB Max Output Power Max PAE Freq [MHz] Zs Zl [db] [dbm] PAE [%] P 1dB Zl [db] [dbm] j j j j4.6.2 j j j j j PAE [%] Data Sheet 12 of Rev. 4.2, -12

13 p t f c m _ C D - 9 _ Reference Circuit, 9 MHz DUT V1 Reference Circuit No. LTN/ E4 Order Code LTNE4TOBO1 PCB Rogers RO435,.58 mm [."] thick, 2 oz. copper, ε r = 3.66 Find Gerber files for this reference fixture on the Infineon Web site at C19 C18 R19 C16 VDD VGG S2 S3 R S1 R16 C13 R11 C11 C11 R11 RF_IN C R18 C17 R12 R13 R R11 C RF_OUT C12 DUT 9 MHZ _4 (73) RO435,. Assembly diagram for reference circuit LTN/ E4, 9 MHz (not to scale) Data Sheet 13 of Rev. 4.2, -12

14 Reference Circuit, 9 MHz (cont.) Components Information Component Description Manufacturer P/N C11 Capacitor, 1 µf Taiyo Yuden UMK3C716MM-T C12 Capacitor, 5.6 pf ATC ATC6F5R6JW C13, C C, Capacitor, 56 pf ATC ATC1A56JW C11 C16, C18, C19 Capacitor,.1 µf Panasonic ECJ-1VB1H12K C17 Capacitor, 2.2 µf TDK Corporation C35X7R1H5KAB R11, R12, Resistor, 1 ohms Panasonic ECG ERJ-3GEYJ1V R13, R, R11 R, R18 Resistor, 1 ohms Panasonic Electronic Components ERJ-8GEYJ1V R16 Resistor, 1.1K ohms Panasonic Electronic Components ERJ-8GEYJ112V R17 Resistor, 1.2K ohms Panasonic Electronic Components ERJ-3GEYJ1V R19 Resistor, 1.3K ohms Panasonic Electronic Components ERJ-3GEYJ132V S1 Potentiometer, 2k ohms Bourns Inc. 34W-1-2E S2 Voltage Regulator Texas Instruments LM78L5ACM S3 Transistor Infineon Technologies BCP56-1 See next page for 26 MHz operation Data Sheet of Rev. 4.2, -12

15 c2711m-2.6-gr1b RF Characteristics Two-carrier WCDMA Characteristics (not subject to production test) V DD = 28 V, I DQ = 1 ma, = 1.3 W avg, ƒ 1 = 265 MHz, ƒ 2 = 266 MHz, 3GPP WCDMA signal, 3.84 MHz channel bandwidth, 8 db CCDF Characteristic Symbol Min Typ Max Unit G ps.2 db Drain h D 19.7 % Intermodulation Distortion IMD 45 dbc Typical RF Performance, MHz (data taken in production test fixture) V DD = 28 V, I DQ = 1 ma, ƒ = 26 MHz 1 MHz carrier spacing, 3.84 MHz BW V DD = 28 V, I DQ = 1 ma, ƒ = 2655 MHz 1 MHz carrier spacing, 3.84 MHz BW Drain (%) Drain (%) c2711m-2.6-gr1a Data Sheet of Rev. 4.2, -12

16 c2711m-2.6-gr1c c2711m-2.6-gr2a c2711m-2.6-gr2c Typical RF Performance, MHz (cont.) V DD = 28 V, I DQ = 1 ma, ƒ = 269 MHz, 1 MHz carrier spacing, 3.84 MHz BW Drain (%) IMD & ACPR (dbc) V DD = 28 V, I DQ = 1 ma, ƒ = 26 MHz, 1 MHz carrier spacing, 3.84 MHz BW IMD Low IMD Up ACPR Drain (%) IMD & ACPR (dbc) V DD = 28 V, I DQ = 1 ma, ƒ = 2655 MHz, 1 MHz carrier spacing, 3.84 MHz BW IMD Low IMD Up ACPR Drain (%) IMD & ACPR (dbc) V DD = 28 V, I DQ = 1 ma, ƒ = 269 MHz, 1 MHz carrier spacing, 3.84 MHz BW IMD Low IMD Up ACPR Drain (%) c2711m-2.6-gr2b 5 Data Sheet of Rev. 4.2, -12

17 c2711m-2.6-gr5a c2711m-2.6-gr3 c2711m-2.6-gr4 c2711m-2.6-gr5b Typical RF Performance, MHz (cont.) V DD = 28 V, I DQ = 1 ma 1 MHz carrier spacing, 3.84 MHz BW V DD = 28 V, I DQ = 1 ma 7 IMD (dbc) IMDL 26 IMDU 2655 IMDL 2655 IMDU 269 IMDL 269 IMDU MHz 2655 MHz 269 MHz (%) at selected supply voltage I DQ = 1 ma, ƒ = 26 MHz at selected supply voltage I DQ = 1 ma, ƒ = 2655 MHz Power V 1 28 V 1 V (%) Power V 1 28 V 1 V (%) Data Sheet 17 of Rev. 4.2, -12

18 c2711m-2.6-gr5c c2711m-2.6-gr6_v2 Typical RF Performance, MHz (cont.) at selected supply voltage I DQ = 1 ma, ƒ = 269 MHz Small Signal & Input Return Loss V DD = 28 V, I DQ = 1 ma 7 6 Power V 1 28 V 1 V (%) -5 1 Input Return Loss Input Return Loss (db) Frequency (MHz) Broadband Circuit Impedance Freq [MHz] Z Source W Z Load W R jx R jx Z Source D Z Load G S Load Pull Performance Pulsed CW signal: µsec, 1% duty cycle; 28 V, 1 ma Class AB Max Output Power Max PAE Freq [MHz] Zs Zl [db] [dbm] PAE [%] P 1dB Zl [db] [dbm] j j j j j j j j j PAE [%] Data Sheet of Rev. 4.2, -12

19 p t f c m _ C D _ Reference Circuit, MHz DUT V1 Reference Circuit No. LTN/ E3 Order Code LTNE3TOBO1 PCB Rogers RO435,.58 mm [."] thick, 2 oz. copper, ε r = 3.66 Find Gerber files for this reference fixture on the Infineon Web site at VGG C13 C11 R C12 VDD R11 R S2 S3 S1 R12 R13 C C C17 C18 R16 C11 RF_IN C16 DUT C19 RF_OUT 26 MHZ _3_A (73) RO435,. Assembly diagram for reference circuit LTN/ E3, 26 MHz (not to scale) Data Sheet 19 of Rev. 4.2, -12

20 Reference Circuit, MHz (cont.) Components Information Component Description Manufacturer P/N C11, C12, C13 Capacitor,.1 µf Panasonic ECJ-1VB1H12K C, C18, C19 Capacitor, 12 pf ATC ATC6S1JW C Capacitor, 2.2 µf TDK Corporation C35X7R1H5KAB C16 Capacitor, 1 pf ATC ATC6S1RCW C17 Capacitor, 1 µf Taiyo Yuden UMK3C716MM-T C11 Capacitor,.3 pf ATC ATC6SR3CW R11, R13 Resistor, 1 ohms Panasonic Electronic Components ERJ-8GEYJ1V R12 Resistor, 1.2K ohms Panasonic Electronic Components ERJ-3GEYJ1V R Resistor, 1.3K ohms Panasonic Electronic Components ERJ-3GEYJ132V R Resistor, 47 ohms Panasonic Electronic Components ERJ-8GEYJ471V R16 Resistor, 1 ohms Panasonic Electronic Components ERJ-3GEYJ1V S1 Potentiometer, 2k ohms Bourns Inc. 34W-1-2E S2 Voltage Regulator Texas Instruments LM78L5ACM S3 Transistor Infineon Technologies BCP56-1 Data Sheet of Rev. 4.2, -12

21 PG-SON-1_po_2_ Package Outline Specifications Package PG-SON-1.54 [.21] 2 PLACES 5X.3 [.126] 2 PLACES 4. [.7] [.321] 4. [.7] 2.97 [.117] 2.37 [.93] S INDEX MARKING TOP VIEW 5X.5 [.3] 2 PLACES.3 [.12] X.65 [.26] 2 PLACES 3.4 [.134] INDEX MARKING BOTTOM VIEW 1.42 [.56].38 [.] BOTH SIDES.5 [.2] SIDE VIEW Diagram Notes unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y.5M Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ±.1 [.4]. 4. Package dimensions: 4. mm X 4. mm X 1.42 mm. 5. Pins: 1 5, gate; 6 1, drain; S (bottom side metallization) source. 6. Gold plating thickness:..127 micron [1 5 microinch]. Find the latest and most complete information about products and packaging at the Infineon Internet page Data Sheet 21 of Rev. 4.2, -12

22 V1 Revision History Revision Date Data Sheet Page Subjects (major changes in each revision) Advance all Proposed specification for new product development Advance 2 Lower maximum junction temperature spec, add thermal resistance Advance 2 Rev. 2.1 reverts junction temperature back to C Production all Production 5, 1, Complete production-released product information, including typical performance graphs and reference circuits for 21 MHz, 9 MHz and 26 MHz operation. Maximum Operating Voltage added, maximum V GS revised. Maximum junction temperature raised to 5 C. ESD ratings clarified. Corrected IDQ in Small Signal graphs Production 3 Add ordering information for additional evaluation boards Production 2 Updated HBM classification to 1B We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: (highpowerrf@infineon.com) To request other information, contact us at: (1-877-GO-LDMOS) USA or International Edition -12 Published by Infineon Technologies AG Neubiberg, Germany 13 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet of Rev. 4.2, -12

PTFC270101M. High Power RF LDMOS Field Effect Transistor 10 W, 28 V, MHz. Description. Features. RF Characteristics

PTFC270101M. High Power RF LDMOS Field Effect Transistor 10 W, 28 V, MHz. Description. Features. RF Characteristics c271m-2.1-gr1c High Power RF LDMOS Field Effect Transistor W, 28 V, 9 27 MHz Description The is an unmatched -watt LDMOS FET suitable for power amplifier applications with frequencies from 9 MHz to 27