PTFC270101M. High Power RF LDMOS Field Effect Transistor 10 W, 28 V, MHz. Description. Features. RF Characteristics

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Angelina Hudson
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This LDMOS transistor offers excellent gain, efficiency and linearity performance in a small overmolded plastic package.

84 MHz bandwidth 26 28 32 34 36 38 4 7 6 5 4 Drain (%) Features Unmatched input and output Typical CW performance, 217 MHz, 28 V - Output power @ P 1dB = W - = db - = 6% Typical two-carrier WCDMA

1 c271m-2.1-gr1c High Power RF LDMOS Field Effect Transistor W, 28 V, 9 27 MHz Description The is an unmatched -watt LDMOS FET suitable for power amplifier applications with frequencies from 9 MHz to 27 MHz. This LDMOS transistor offers excellent gain, efficiency and linearity performance in a small overmolded plastic package. Package PG-SON- (db) V DD = 28 V, I DQ = 1 ma, ƒ = 217 MHz, MHz carrier spacing, 3.84 MHz bandwidth Drain (%) Features Unmatched input and output Typical CW performance, 217 MHz, 28 V - Output P 1dB = W - = db - = 6% Typical two-carrier WCDMA performance, 217 MHz, 28 V, 8 db PAR - Output power = 1.3 W avg - = 21 db - = 21% - ACPR = MHz Capable of handling :1 28 V, W (CW) output power Integrated ESD protection Pb-free and RoHS compliant RF Characteristics Two-carrier WCDMA Specifications (tested in Wolfspeed production test fixture) V DD = 28 V, I DQ = 1 ma, = 2.4 W avg, ƒ = 217 MHz 3GPP WCDMA signal, 3.84 MHz channel bandwidth, 8 db CCDF Characteristic Symbol Min Typ Max Unit G ps db All published data at T CASE = C unless otherwise indicated ESD: Electrostatic discharge sensitive device observe handling precautions! Rev. 5, -6-

2 2 DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage V GS = V, I DS = ma V( BR)DSS 65 V Drain Leakage Current V DS = 28 V, V GS = V I DSS 1 µa V DS = 63 V, V GS = V I DSS µa Gate Leakage Current V GS = V, V DS = V I GSS 1 µa On-State Resistance V GS = V, V DS =.1 V R DS(on) 1 W Operating Gate Voltage V DS = 28 V, I DQ = 1 ma V GS V Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage V DSS 65 V Gate-Source Voltage V GS 6 to + V Operating Voltage V DD to +32 V Junction Temperature T J 5 C Storage Temperature Range T STG 65 to + C Thermal Resistance (T CASE = 7 C, 12 W CW) RqJC 4.4 C/W Moisture Sensitivity Level Level Test Standard Package Temperature Unit 3 IPC/JEDEC J-STD- 26 C ESD Ratings Test Type Rated Class Standard Human Body Model (HBM) 1B ANSI/ESDA/JEDEC JS 1 Charge Device Model (CDM) II JESD -C1 Ordering Information Type Order Code Package and Description Shipping V1 R1K -V1-R1K PG-SON-, molded plastic, SMD Tape & Reel, pcs Rev. 5, -6-

3 3 Evaluation Boards Order Code Frequency Description LTN/ V MHz Class AB with combined outputs, R436,.58 mm thick LTN/ E MHz Class AB with combined outputs, R436,.58 mm thick LTN/ E MHz Class AB with combined outputs, R436,.58 mm thick LTN/ E MHz Class AB with combined outputs, R436,.58 mm thick LTN/ E6 5 8 MHz Class AB with combined outputs, R436,.58 mm thick LTN/ E7 MHz Class AB with combined outputs, R436,.58 mm thick Find Gerber files for these reference fixtures on the Wolfspeed Web site at See next page for Typical RF Performance Rev. 5, -6-

4 c271m-2.1-gr1a c271m-2.1-gr1b c271m-2.1-gr2b 4 Typical RF Performance, MHz (data taken in production test fixture) 23 V DD = 28 V, I DQ = 1 ma, ƒ = 21 MHz MHz carrier spacing, 3.84 MHz bandwidth 7 23 V DD = 28 V, I DQ = 1 ma, ƒ = 2 MHz MHz carrier spacing, 3.84 MHz bandwidth (db) Drain (%) (db) Drain (%) IMD (dbc), ACPR (dbc) V DD = 28 V, I DQ = 1 ma, ƒ = 21 MHz MHz carrier spacing, 3.84 MHz bandwidth IMD Low IMD Up ACPR Drain (%) IMD (dbc), ACPR (dbc) V DD = 28 V, I DQ = 1 ma, ƒ = 2 MHz MHz carrier spacing, 3.84 MHz bandwidth IMD Low IMD Up ACPR Drain (%) c271m-2.1-gr2a 5 Rev. 5, -6-

5 c271m-2.1-gr2c c271m-2.1-gr5b c271m-2.1-gr5a c271m-2.1-gr5c 5 Typical RF Performance, MHz (cont.) IMD (dbc), ACPR (dbc) V DD = 28 V, I DQ = 1 ma, ƒ = 217 MHz MHz carrier spacing, 3.84 MHz bandwidth IMD Low IMD Up ACPR Drain (%) Power (db) at selected supply voltage I DQ = 1 ma, ƒ = 21 MHz VDD = V VDD = 28 V VDD = 32 V (%) at selected supply voltage I DQ = 1 ma, ƒ = 2 MHz at selected supply voltage I DQ = 1 ma, ƒ = 217 MHz Power (db) VDD = V VDD = 28 V VDD = 32 V (%) Power (db) VDD = V VDD = 28 V VDD = 32 V (%) Rev. 5, -6-

6 c271m-2.1-gr3 c271m-2.1-gr6_v2 c271m-2.1-gr4 6 Typical RF Performance, MHz (cont.) IMD, Up and Low (dbc) V DD = 28 V, I DQ = 1 ma MHz carrier spacing, 3.84 MHz BW 217 IMD-U 2 IMD-U 21 IMD-U 217 IMD-L 2 IMD-L 21 IMD-L (db) V DD = 28 V, I DQ = 1 ma 21 MHz 2 MHz 217 MHz (%) Small Signal and Input Return Loss V DD = 28 V, I DQ = 1 ma (db) Input Return Loss Frequency (MHz) Input Return Loss (db) Rev. 5, -6-

7 7 Broadband Circuit Impedance Freq [MHz] Z Source W Z Load W R jx R jx Z Source D Z Load G S Load Pull Performance Pulsed CW signal: µsec, % duty cycle; 28 V, 1 ma Class AB Max Output Power Max PAE Freq [MHz] Zs Zl [db] [dbm] PAE [%] P 1dB Zl [db] [dbm] PAE [%] Reference Circuit, 2 MHz DUT V1 Reference Circuit No. LTN/ V1 Order Code LTNV1TOBO1 PCB Rogers RO435,.58 mm [."] thick, 2 oz. copper, ε r = 3.66 Find Gerber files for this reference fixture on the Wolfspeed Web site at Rev. 5, -6-

8 p t f c m _ c d _ Reference Circuit, 2 MHz (cont.) VDD C8 VGG C4 C7 R2 C3 R1 C5 C6 RF_IN DUT RF_OUT C1 C2 _5 2 MHZ RO435,. (9) Assembly diagram for reference circuit LTN/ V1, 2 MHz (not to scale) Components Information Component Description Manufacturer P/N C1 Capacitor, 1.5 pf ATC ATC6F1R5CW C2, C3, Capacitor, 12 pf ATC ATC6F1JW C6, C7 C4 Capacitor, 1. µf TDK Corporation C4532X7R2A5M2KA C5 Capacitor, 1.2 pf ATC ATC6F1R2CW C8 Capacitor, µf Taiyo Yuden UMK3C76MM-T R1, R2 Resistor, ohms Panasonic Electronic Components ERJ-8GEYJV Rev. 5, -6-

9 c271m-9-gr1b 9 RF Characteristics Two-carrier WCDMA Characteristics (not subject to production test) V DD = 28 V, I DQ = 1 ma, = 1.3 W avg, ƒ 1 = MHz, ƒ 2 = MHz, 3GPP WCDMA signal, 3.84 MHz channel bandwidth, 8 db CCDF Characteristic Symbol Min Typ Max Unit G ps 23 db Drain h D % Intermodulation Distortion IMD 39 dbc Typical RF Performance, 9 96 MHz (data taken in production test fixture) V DD = 28 V, I DQ = 1 ma, ƒ = 9 MHz MHz carrier spacing, 3.84 MHz BW 7 V DD = 28 V, I DQ = 1 ma, ƒ = 94 MHz MHz carrier spacing, 3.84 MHz BW 7 (db) Drain (%) (db) c271m-9-gr1a Drain (%) Rev. 5, -6-

10 c271m-9-gr1c c271m-9-gr2a c271m-9-gr2c Typical RF Performance, 9 96 MHz (cont.) (db) V DD = 28 V, I DQ = 1 ma, ƒ = 96 MHz. MHz carrier spacing, 3.84 MHz BW Drain (%) IMD (dbc), ACPR (dbc) V DD = 28 V, I DQ = 1 ma, ƒ = 9 MHz MHz carrier spacing, 3.84 MHz BW IMD Low IMD Up ACPR Drain (%) IMD (dbc), ACPR (dbc) V DD = 28 V, I DQ = 1 ma, ƒ = 94 MHz MHz carrier spacing, 3.84 MHz BW IMD Low IMD Up ACPR Drain (%) IMD (dbc), ACPR (dbc) V DD = 28 V, I DQ = 1 ma, ƒ = 96 MHz MHz carrier spacing, 3.84 MHz BW IMD Low IMD Up ACPR c271m-9-gr2b Drain (%) Rev. 5, -6-

11 c271m-9-gr6_v2 c271m-9-gr4 c271m-9-gr5a 11 Typical RF Performance, 9 96 MHz (cont.) V DD = 28 V, I DQ = 1 ma MHz carrier spacing, 3.84 MHz BW V DD = 28 V, I DQ = 1 ma IMD (dbc) IMDL 9 IMDU 94 IMDL 94 IMDU 96 IMDL 96 IMDU (db) MHz 94 MHz 9 MHz (%) c271m-9-gr3 6 Small Signal & Input Return Loss V DD = 28 V, I DQ = 1 ma at selected supply voltage I DQ = 1 ma, ƒ = 9 MHz (db) Input Return Loss Frequency (MHz) -5 Input Return Loss (db) Power (db) V DD = V V DD = 28 V V DD = 32 V (%) Rev. 5, -6-

12 c271m-9-gr5b c271m-9-gr5c 12 Typical RF Performance, 9 96 MHz (cont.) at selected supply voltage I DQ = 1 ma, ƒ = 94 MHz at selected supply voltage I DQ = 1 ma, ƒ = 96 MHz Power (db) V DD = V V DD = 28 V V DD = 32 V (%) Power (db) V DD = V V DD = 28 V V DD = 32 V (%) Broadband Circuit Impedance Freq [MHz] Z Source W Z Load W R jx R jx Z Source D Z Load G S Load Pull Performance Pulsed CW signal: µsec, % duty cycle; 28 V, 1 ma Class AB Max Output Power Max PAE Freq [MHz] Zs Zl [db] [dbm] PAE [%] P 1dB Zl [db] [dbm] j j j j4.6.2 j j j j j PAE [%] Rev. 5, -6-

13 p t f c m _ C D - 9 _ Reference Circuit, 9 MHz DUT V1 Reference Circuit No. LTN/ E4 Order Code LTNE4TOBO1 PCB Rogers RO435,.58 mm [."] thick, 2 oz. copper, ε r = 3.66 Find Gerber files for this reference fixture on the Wolfspeed Web site at C9 C8 R9 C6 VDD VGG S2 S3 R5 S1 R6 C3 R1 C1 C1 R1 RF_IN C5 R8 C7 R2 R3 R4 R1 C4 RF_OUT C2 DUT 9 MHZ _4 (73) RO435,. Assembly diagram for reference circuit LTN/ E4, 9 MHz (not to scale) Rev. 5, -6-

14 Reference Circuit, 9 MHz (cont.) Components Information Component Description Manufacturer P/N C1 Capacitor, µf Taiyo Yuden UMK3C76MM-T C2 Capacitor, 5.6 pf ATC ATC6F5R6JW C3, C4 C5, Capacitor, 56 pf ATC ATCA56JW C1 C6, C8, C9 Capacitor,.1 µf Panasonic ECJ-1VB1H2K C7 Capacitor, 2.2 µf TDK Corporation C35X7R1H5KAB R1, R2, Resistor, ohms Panasonic ECG ERJ-3GEYJV R3, R4, R1 R5, R8 Resistor, ohms Panasonic Electronic Components ERJ-8GEYJV R6 Resistor, 1.1K ohms Panasonic Electronic Components ERJ-8GEYJ112V R7 Resistor, 1.2K ohms Panasonic Electronic Components ERJ-3GEYJ1V R9 Resistor, 1.3K ohms Panasonic Electronic Components ERJ-3GEYJ132V S1 Potentiometer, 2k ohms Bourns Inc. 34W-1-2E S2 Voltage Regulator Texas Instruments LM78L5ACM S3 Transistor Infineon Technologies BCP56- See next page for 26 MHz operation Rev. 5, -6-

15 c271m-2.6-gr1b RF Characteristics Two-carrier WCDMA Characteristics (not subject to production test) V DD = 28 V, I DQ = 1 ma, = 1.3 W avg, ƒ 1 = 265 MHz, ƒ 2 = 266 MHz, 3GPP WCDMA signal, 3.84 MHz channel bandwidth, 8 db CCDF Characteristic Symbol Min Typ Max Unit G ps.2 db Drain h D 19.7 % Intermodulation Distortion IMD 45 dbc Typical RF Performance, MHz (data taken in production test fixture) V DD = 28 V, I DQ = 1 ma, ƒ = 26 MHz MHz carrier spacing, 3.84 MHz BW V DD = 28 V, I DQ = 1 ma, ƒ = 2655 MHz MHz carrier spacing, 3.84 MHz BW 6 6 (db) Drain (%) (db) Drain (%) c271m-2.6-gr1a Rev. 5, -6-

16 c271m-2.6-gr1c c271m-2.6-gr2a c271m-2.6-gr2c Typical RF Performance, MHz (cont.) (db) V DD = 28 V, I DQ = 1 ma, ƒ = 269 MHz, MHz carrier spacing, 3.84 MHz BW Drain (%) IMD & ACPR (dbc) V DD = 28 V, I DQ = 1 ma, ƒ = 26 MHz, MHz carrier spacing, 3.84 MHz BW IMD Low IMD Up ACPR Drain (%) IMD & ACPR (dbc) V DD = 28 V, I DQ = 1 ma, ƒ = 2655 MHz, MHz carrier spacing, 3.84 MHz BW IMD Low IMD Up ACPR Drain (%) IMD & ACPR (dbc) V DD = 28 V, I DQ = 1 ma, ƒ = 269 MHz, MHz carrier spacing, 3.84 MHz BW IMD Low IMD Up ACPR Drain (%) c271m-2.6-gr2b 5 Rev. 5, -6-

17 c271m-2.6-gr5a c271m-2.6-gr3 c271m-2.6-gr4 c271m-2.6-gr5b 17 Typical RF Performance, MHz (cont.) V DD = 28 V, I DQ = 1 ma MHz carrier spacing, 3.84 MHz BW V DD = 28 V, I DQ = 1 ma 7 IMD (dbc) IMDL 26 IMDU 2655 IMDL 2655 IMDU 269 IMDL 269 IMDU (db) MHz 2655 MHz 269 MHz (%) at selected supply voltage I DQ = 1 ma, ƒ = 26 MHz at selected supply voltage I DQ = 1 ma, ƒ = 2655 MHz Power (db) V 28 V V (%) Power (db) V 28 V V (%) Rev. 5, -6-

18 c271m-2.6-gr5c c271m-2.6-gr6_v2 Typical RF Performance, MHz (cont.) at selected supply voltage I DQ = 1 ma, ƒ = 269 MHz Small Signal & Input Return Loss V DD = 28 V, I DQ = 1 ma 7 6 Power (db) V 28 V V (%) (db) -5 Input Return Loss Frequency (MHz) Input Return Loss (db) Broadband Circuit Impedance Freq [MHz] Z Source W Z Load W R jx R jx Z Source D Z Load G S Load Pull Performance Pulsed CW signal: µsec, % duty cycle; 28 V, 1 ma Class AB Max Output Power Max PAE Freq [MHz] Zs Zl [db] [dbm] PAE [%] P 1dB Zl [db] [dbm] j j j j j j j j j PAE [%] Rev. 5, -6-

19 p t f c m _ C D _ Reference Circuit, MHz DUT V1 Reference Circuit No. LTN/ E3 Order Code LTNE3TOBO1 PCB Rogers RO435,.58 mm [."] thick, 2 oz. copper, ε r = 3.66 Find Gerber files for this reference fixture on the Wolfspeed Web site at VGG C3 C1 R4 C2 VDD R1 R5 S2 S3 S1 R2 R3 C5 C4 C7 C8 R6 C1 RF_IN C6 DUT C9 RF_OUT 26 MHZ _3_A (73) RO435,. Assembly diagram for reference circuit LTN/ E3, 26 MHz (not to scale) Rev. 5, -6-

20 Reference Circuit, MHz (cont.) Components Information Component Description Manufacturer P/N C1, C2, C3 Capacitor,.1 µf Panasonic ECJ-1VB1H2K C4, C8, C9 Capacitor, 12 pf ATC ATC6S1JW C5 Capacitor, 2.2 µf TDK Corporation C35X7R1H5KAB C6 Capacitor, 1 pf ATC ATC6S1RCW C7 Capacitor, µf Taiyo Yuden UMK3C76MM-T C1 Capacitor,.3 pf ATC ATC6SR3CW R1, R3 Resistor, ohms Panasonic Electronic Components ERJ-8GEYJV R2 Resistor, 1.2K ohms Panasonic Electronic Components ERJ-3GEYJ1V R4 Resistor, 1.3K ohms Panasonic Electronic Components ERJ-3GEYJ132V R5 Resistor, 47 ohms Panasonic Electronic Components ERJ-8GEYJ471V R6 Resistor, ohms Panasonic Electronic Components ERJ-3GEYJV S1 Potentiometer, 2k ohms Bourns Inc. 34W-1-2E S2 Voltage Regulator Texas Instruments LM78L5ACM S3 Transistor Infineon Technologies BCP56- Rev. 5, -6-

21 PG-SON-_po_2_ Package Outline Specifications Package PG-SON-.54 [.21] 2 PLACES 5X.3 [.126] 2 PLACES 4. [.7] [.321] 4. [.7] 2.97 [.117] 2.37 [.93] S INDEX MARKING TOP VIEW 5X.5 [.3] 2 PLACES. [.12] X.65 [.26] 2 PLACES 3.4 [.134] INDEX MARKING BOTTOM VIEW 1.42 [.56].38 [.] BOTH SIDES.5 [.2] SIDE VIEW Diagram Notes unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y.5M Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ±. [.4]. 4. Package dimensions: 4. mm X 4. mm X 1.42 mm. 5. Pins: 1 5, gate; 6, drain; S (bottom side metallization) source. 6. Gold plating thickness:..127 micron [1 5 microinch]. Rev. 5, -6-

22 Revision History Revision Date Data Sheet Type Page Subjects (major changes since last revision) Advance All Proposed specification for new product development Advance 2 Lower maximum junction temperature spec, add thermal resistance Advance 2 Rev. 2.1 reverts junction temperature back to C Production All 2 2 Complete production-released product information, including typical performance graphs and reference circuits for 2 MHz, 9 MHz and 26 MHz operation. Maximum Operating Voltage added, maximum V GS revised. Maximum junction temperature raised to 5 C. ESD ratings clarified Production 5,, 17 Corrected IDQ in Small Signal graphs Production 3 Add ordering information for additional evaluation boards Production 2 Updated HBM classification to 1B 5-6- Production All Converted to Wolfspeed Data Sheet For more information, please contact: 46 Silicon Drive Durham, North Carolina, USA Sales Contact RFSales@wolfspeed.com RF Product Marketing Contact RFMarketing@wolfspeed.com Notes Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Typical parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. Copyright Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Wolfspeed and the Wolfspeed logo are trademarks of Cree, Inc. Rev. 5, -6-

Drain Efficiency (%) c270101m-2.1-gr1c. Characteristic Symbol Min Typ Max Unit

Drain Efficiency (%) c270101m-2.1-gr1c. Characteristic Symbol Min Typ Max Unit c2711m-2.1-gr1c High Power RF LDMOS Field Effect Transistor 1 W, 28 V, 9 27 MHz Description The is an unmatched 1-watt LDMOS FET suitable for power amplifier applications with frequencies from 9 MHz to