maintaining high gain and efficiency. Parameter 5.5 GHz 6.0 GHz 6.5 GHz Units Small Signal Gain db = 28 dbm

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CGHVF006S 6 W, DC - 5 GHz, 40V, GaN HEMT Cree s CGHVF006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide

Additional application circuits are available for C-Band at 5.8 GHz - 7.2 GHz and X-Band at 7.9-8.4 GHz and 8.5-9.6 GHz.

1 CGHVF006S 6 W, DC - 5 GHz, 40V, GaN HEMT Cree s CGHVF006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L, S, C, X and Ku-Band amplifier applications. The datasheet specifications are based on a C-Band ( GHz) amplifier. Additional application circuits are available for C-Band at 5.8 GHz GHz and X-Band at GHz and GHz. The CGHVF006S operates on a 40 volt rail circuit while housed in a 3mm x 4mm, surface mount, dual-flat-no-lead (DFN) package. Under reduced power, the transistor can operate below 40V to as low as 20V, maintaining high gain and efficiency. Package Type: 3x4 DFN PN: CGHVF006S Typical Performance GHz (T C = 25 C), 40 V Parameter 5.5 GHz 6.0 GHz 6.5 GHz Units Small Signal Gain db Output P IN = 28 dbm dbm Drain P IN = 28 dbm % Note: Measured in the CGHVF006S-AMP application circuit. Pulsed 00 µs 0% duty. Features for 40 V in CGHVF006S-AMP Up to 5 GHz Operation 8 W Typical Output Power 7 db Gain at 6.0 GHz 5 db Gain at 9.0 GHz Application circuits for GHz, GHz, and GHz. High degree of APD and DPD correction can be applied Rev 4.0 June 207 Listing of Available Hardware Application Circuits / Demonstration Circuits Application Circuit Operating Frequency Amplifier Class Operating Voltage CGHVF006S-AMP GHz Class A/B 40 V CGHVF006S-AMP GHz Class A/B 40 V CGHVF006S-AMP GHz Class A/B 40 V CGHVF006S-AMP GHz Class A/B 20 V Subject to change without notice.

2 Absolute Maximum Ratings (not simultaneous) at 25 C Case Temperature Parameter Symbol Rating Units Notes Drain-Source Voltage V DSS 00 Volts 25 C Gate-to-Source Voltage V GS -0, +2 Volts 25 C Storage Temperature T STG -65, +50 C Operating Junction Temperature T J 225 C Maximum Forward Gate Current I GMAX.2 ma 25 C Maximum Drain Current I DMAX 0.95 A 25 C Soldering Temperature 2 T S 245 C Case Operating Temperature 3,4 T C -40, +50 C Thermal Resistance, Junction to Case 5 R θjc 4.5 C/W 85 C Note: Current limit for long term, reliable operation 2 Refer to the Application Note on soldering at /document-library 3 Simulated at P DISS = 2.4 W 4 T C = Case temperature for the device. It refers to the temperature at the ground tab underneath the package. The PCB will add additional thermal resistance. 5 The R TH for Cree s application circuit, CGHVF006S-AMP, with 3 (Ø mil) via holes designed on a 20 mil thick Rogers 5880 PCB, is 3.9 C/W. The total R TH from the heat sink to the junction is 4.5 C/W C/W = 8.4 C/W. Electrical Characteristics (T C = 25 C) - 40 V Typical Characteristics Symbol Min. Typ. Max. Units Conditions DC Characteristics Gate Threshold Voltage V GS(th) V DC V DS = 0 V, I D =.2 ma Gate Quiescent Voltage V GS(Q) -2.7 V DC V DS = 40 V, I D = 60 ma Saturated Drain Current 2 I DS -.0 A V DS = 6.0 V, V GS = 2.0 V Drain-Source Breakdown Voltage V (BR)DSS 00 V DC V GS = -8 V, I D =.2 ma RF Characteristics 3 (T C = 25 C, F 0 = GHz unless otherwise noted) Small Signal Gain 3,4 G db = 0 dbm Output Power 3,4 P OUT dbm = 26 dbm Drain Efficiency 3,4 η % = 26 dbm Output Mismatch Stress 4 VSWR - 0 : - Y Dynamic Characteristics No damage at all phase angles, = 26 dbm Input Capacitance 5 C GS.3 pf V DS = 40 V, V gs = -8 V, f = MHz Output Capacitance 5 C DS 0.3 pf V DS = 40 V, V gs = -8 V, f = MHz Feedback Capacitance C GD 0.04 pf V DS = 40 V, V gs = -8 V, f = MHz Notes: Measured on wafer prior to packaging 2 Scaled from PCM data 3 Measured in Cree s production test fixture. This fixture is designed for high volume testing at GHz 4 Unmodulated Pulsed Signal 00 µs, 0% duty cycle 5 Includes package Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of 2 CGHVF006S Rev 4.0

3 Electrical Characteristics When Tested in CGHVF006S-AMP at C-Band Under OQPSK Characteristics Symbol Min. Typ. Max. Units Conditions RF Characteristics (T C = 25 C, F 0 = GHz unless otherwise noted) Gain G db = 0 dbm Output Power 2 P OUT 39 dbm = 27 dbm Drain Efficiency 2 η 55 - % = 27 dbm OQPSK 3 ACLR dbc = 60 ma, P OUT = 33 dbm Output Mismatch Stress 2 VSWR 0 : Y No damage at all phase angles, V DS = 60 ma Notes: Measured in CGHVF006S-AMP Application Circuit 2 Pulsed 00 µs, 0% duty cycle 3 OQPSK modulated signal,.6 msps, PN23, Alpha Filter = 0.2 Offset =.6 MHz Typical Performance - CGHVF006S-AMP at C-Band Under OQPSK Figure. - Typical Small Signal Response of CGHVF006S-AMP Application Circuit = 60 ma Magnitude (db) S S2 S Frequency (GHz) Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of 3 CGHVF006S Rev 4.0

4 Typical Performance in Application Circuit CGHVF006S-AMP 40 Figure 2. - Typical Gain, Efficiency and OQPSK Performance vs Frequency P OUT = 33 dbm. = 60 ma 0 Efficiency 35 Gain Offset Efficiency Efficiency -5 Gain (d db) and Efficiency (%) Gain Gain OQPSK Offset (dbc) 0 5 Offset Offset Frequency (GHz) Figure 3. - Typical Gain, Efficiency and OQPSK Performance vs Input Power OQPSK Transfer Frequency = 7.2 GHz, = 60 ma 35-5 DEff 30 Gain_ -20 -Oset_ 25 +Oset_ -25 Ga ain (db) Effic ciency (%) Gain Efficiency Oset OQPSK Offset (dbc) Input Power (dbm) Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of 4 CGHVF006S Rev 4.0

Typical Performance in Application Circuit CGHVF006S-AMP 40.0 Figure 4. - Typical Pulsed Power Response = 60 ma, 00 µs, 0% Duty, P IN = 27 dbm 75 39.5 70 39.0 65 Outp put Power (dbm) 38.5 38.0 37.

5 Typical Performance in Application Circuit CGHVF006S-AMP 40.0 Figure 4. - Typical Pulsed Power Response = 60 ma, 00 µs, 0% Duty, P IN = 27 dbm Outp put Power (dbm) in Efficiency (%) Drai Output Power Drain Efficiency Frequency (GHz) CGHVF006S-AMP Application Circuit Bill of Materials, OQPSK CGHVF006S-AMP Application Circuit Designator Description Qty R RES, 5, OHM, +/-%, /6 W, 0402 R2 RES, 00, OHM, +/-%, /6 W, 0603 C, C4 CAP,.8 pf, ±0. pf, 0603, ATC 2 C2 CAP, 2.0 pf, ±0. pf, 0402, ATC C3, C8 CAP,.5 pf, ±0. pf, 0402, ATC 2 C4 CAP, 0 pf, ±5%, 0603, ATC C5, C0 CAP, 470 pf, 5%, 00 V, 0603, X 2 C6, C CAP, pf, 0805, 00V, X7R 2 C7 CAP, 0 UF, 6 V, TANTALUM C9 CAP, 20 pf, ±5%, 0603, ATC C2 CAP,.0 UF, 00V, 0% X7R, 20 C3 CAP, 33 UF, 20%, G CASE J, J2 CONN, SMA, PANEL MOUNT JACK, FLANGE 2 PCB, RT5880, THK, CGHVF006S J3 HEADER RT>PLZ.CEN LK 5POS Q QFN TRANSISTOR CGHVF006S Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of 5 CGHVF006S Rev 4.0

6 CGHVF006S-AMP Application Circuit Schematic, OQPSK Vg=-2.0V to -3.5V typ GND Vd=+40V J3 C7 0 C C5 470 pf C4 0 pf C3.5 pf C8.5 pf C9 20 pf C0 470 pf C C2 C3 33 J C.8 pf R2 00 Ohm R 5 Ohm C2 2.0 pf Q 2 3 C4.8 pf J2 CGHVF006S-AMP Application Circuit Outline, OQPSK Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of 6 CGHVF006S Rev 4.0

7 Electrical Characteristics When Tested in CGHVF006S-AMP2 at X-Band, SATCOM Characteristics Symbol Min. Typ. Max. Units Conditions RF Characteristics (T C = 25 C, F 0 = GHz unless otherwise noted) Gain G 5 - db = 0 dbm Output Power 2 P OUT 39 dbm = 28 dbm Drain Efficiency 2 η 55 - % = 28 dbm OQPSK 3 ACLR dbc = 60 ma, P OUT = 33 dbm Output Mismatch Stress 2 VSWR 0 : Y No damage at all phase angles, = 28 dbm Notes: Measured in CGHVF006S-AMP2 Application Circuit 2 Pulsed 00 µs, 0% duty cycle 3 OQPSK modulated signal,.6 msps, PN23, Alpha Filter = 0.2 Offset =.6 MHz Typical Performance in Application Circuit CGHVF006S-AMP2 at X-Band, SATCOM Figure 5. - Typical Small Signal Response of CGHVF006S-AMP2 Application Circuit = 60 ma Magnitude (db) S2 S S Frequency (GHz) Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of 7 CGHVF006S Rev 4.0

8 Typical Performance in Application Circuit CGHVF006S-AMP2 Figure 6. - Typical OQPSK Response = 60 ma,.6 MSPS, P OUT = 33 dbm Drain Efficiency -3 Gain (db B) & Drain Efficiency (%) Gain Drain Efficiency ACLR P OUT Gain ACLR (dbc) 5 ACLR Frequency (GHz) Typical Performance in Application Circuit CGHVF006S-AMP2 35 Figure 7. - OQPSK Transfer Response = 60 ma,.6 MSPS, Frequency = 8.4 GHz Gain Eff -5 -Oset Gain (db) an nd Drain Efficiency (%) Oset OQP PSK Offset (dbc) Output Power (dbm) Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of 8 CGHVF006S Rev 4.0

Typical Performance in Application Circuit CGHVF006S-AMP2 Figure 8. - Typical Pulsed Power Response = 60 ma, 00 µs, 0% Duty, P IN = 28 dbm 40.0 75 39.5 Output Power 70 39.0 65 Outp put Power (dbm) 38.

9 Typical Performance in Application Circuit CGHVF006S-AMP2 Figure 8. - Typical Pulsed Power Response = 60 ma, 00 µs, 0% Duty, P IN = 28 dbm Output Power Outp put Power (dbm) Drain Efficiency Dra ain Efficiency (%) Output Power Drain Efficiency Frequency (GHz) 40 CGHVF006S-AMP2 Application Circuit Bill of Materials, SATCOM CGHVF006S-AMP2 Application Circuit Designator Description Qty R RES, 5, OHM, +/-%, /6 W, 0402 R2 RES, 00, OHM, +/-%, /6 W, 0603 C3, C8 CAP,.0pF, ±0.05 pf, 0402, ATC 2 C4 CAP,.0pF, ±5%, 0603, ATC C CAP,.2pF, ±5%, 0603, ATC C2 CAP,.6pF, ±5%, 0402, ATC C4 CAP, 0pF, ±5%, 0603, ATC C5, C0 CAP, 470pF, 5%, 00V, 0603, X 2 C6,C CAP, 33000pF, 0805, 00V, X7R 2 C7 CAP, 0 UF, 6 V, TANTALUM C9 CAP, 20 pf, ±5%, 0603, ATC C2 CAP,.0 UF, 00V, 0% X7R, 20 C3 CAP, 33 UF, 20%, G CASE J, J2 CONN, SMA, PANEL MOUNT JACK, FLANGE 2 PCB, RT5880, THK, CGHVF006S BASEPLATE, AL, 2.60 X.70 X 2.50 J3 HEADER RT>PLZ.CEN LK 5POS 2-56 SOC HD SCREW /4 SS 4 #2 SPLIT LOCKWASHER SS 4 Q QFN TRANSISTOR CGHVF006S Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of 9 CGHVF006S Rev 4.0

10 CGHVF006S-AMP2 Application Circuit Schematic, SATCOM CGHVF006S-AMP2 Application Circuit Outline, SATCOM Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of 0 CGHVF006S Rev 4.0

11 Electrical Characteristics When Tested in CGHVF006S-AMP3 at X-Band, RADAR Characteristics Symbol Min. Typ. Max. Units Conditions RF Characteristics (T C = 25 C, F 0 = GHz unless otherwise noted) Gain G db = 0 dbm Output Power 2 P OUT 38.5 dbm = 28 dbm Drain Efficiency 2 η 52 - % = 28 dbm Output Mismatch Stress 2 VSWR 0 : Y = 28 dbm Notes: Measured in CGHVF006S-AMP3 Application Circuit 2 Pulsed 00 µs, 0% duty cycle Typical Performance in Application Circuit CGHVF006S-AMP3 at X-Band, RADAR Figure 9. - Typical Small Signal Response = 60 ma Ma agnitude (db) S2 S S Frequency (GHz) Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of CGHVF006S Rev 4.0

Typical Performance in Application Circuit CGHVF006S-AMP3 Figure 0. - Typical Pulsed Power Response = 60 ma, 00 µs, 0% Duty, P IN = 28 dbm 40.0 75 39.5 70 39.0 Output Power 65 Outpu Power (dbm) 38.

12 Typical Performance in Application Circuit CGHVF006S-AMP3 Figure 0. - Typical Pulsed Power Response = 60 ma, 00 µs, 0% Duty, P IN = 28 dbm Output Power 65 Outpu Power (dbm) Drain Efficiency Drai in Efficiency (%) Output Power 40 Drain Efficiency Frequency (GHz) CGHVF006S-AMP3 Application Circuit Bill of Materials, RADAR CGHVF006S-AMP3 Application Circuit Designator Description Qty R RES, 5, OHM, +/-%, /6 W, 0402 R2 RES, 00, OHM, +/-%, /6 W, 0603 C, C4 CAP,.0 pf, ±0.05 pf, 0603, ATC 2 C2 CAP,.0 pf, ±0.05 pf, 0402, ATC C3, C8 CAP, 0.8 pf, ±0.05 pf, 0402, ATC 2 C4 CAP, 0 pf, ±5%, 0603, ATC C5, C0 CAP, 470 pf, 5%, 00 V, 0603, X 2 C6, C CAP, pf, 0805, 00V, X7R 2 C7 CAP, 0 UF, 6 V, TANTALUM C9 CAP, 20 pf, ±5%, 0603, ATC C2 CAP,.0 UF, 00V, 0% X7R, 20 C3 CAP, 33 UF, 20%, G CASE J, J2 CONN, SMA, PANEL MOUNT JACK, FLANGE 2 J3 HEADER RT>PLZ.CEN LK 5POS Q QFN TRANSISTOR CGHVF006S Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of 2 CGHVF006S Rev 4.0

13 CGHVF006S-AMP3 Application Circuit Schematic, RADAR Vg=-2.0V to -3.5V typ GND Vd=+40V J3 C7 0 C C5 470 pf C4 0 pf C3 0.8 pf C8 C9 0.8 pf 20 pf C0 470 pf C C2 C3 33 J C.0 pf R2 00 Ohm R 5 Ohm C2.0 pf Q 2 3 C4.0 pf J2 CGHVF006S-AMP3 Application Circuit Outline, RADAR Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of 3 CGHVF006S Rev 4.0

14 Electrical Characteristics When Tested in CGHVF006S-AMP4 at 802. Characteristics Symbol Min. Typ. Max. Units Conditions RF Characteristics (T C = 25 C, F 0 = GHz unless otherwise noted) Gain G 3 - db = 20 V, I DQ = 30 ma, P IN = 27 dbm Drain Efficiency 2 η 27 - % = 20 V, I DQ = 30 ma, P IN = 27 dbm OQPSK 3 ACLR dbc = 20 V, I DQ = 30 ma, P OUT = 27 dbm Output Mismatch Stress 2 VSWR 0 : Y No damage at all phase angles, = 20 V, I DQ = 30 ma, P IN = 27 dbm Notes: Measured in CGHVF006S-AMP4 Application Circuit 2 Single carrier WCDMA, 3GPP Test Model, G4 DPCH, 45% clipping, PAR = % probability on CCDF Typical Performance - CGHVF006S-AMP4 at Figure. - Typical Small Signal Response = 20 V, I DQ = 30 ma 0 5 Magn nitude (db) S S2 S Frequency (GHz) Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of 4 CGHVF006S Rev 4.0

15 Typical Performance in Application Circuit CGHVF006S-AMP4 Figure 2. - Typical Gain, Efficiency and WCDMA Performance vs Frequency = 20 V, I DQ = 30 ma, P OUT = 27 dbm Gain Drain Efficiency ACLR Drain Efficiency -39 Gain (db) & Drain Efficiency (%) ACLR Gain ACLR (dbc) Frequency (GHz) CGHVF006S-AMP4 Application Circuit Bill of Materials at 802. CGHVF006S-AMP4 Application Circuit Designator Description Qty R, R3 RES,, OHM, +/-%, /6 W, R2 RES, 5., OHM, +/-%, /6W, 0603 C2, C6, C CAP,.8 pf, +/-0. pf, 0603, ATC 3 C CAP, 0.2 pf, +/-0.05 pf, 0402, ATC C3, C7, C2 CAP, 470 pf, 5%, 00 V, 0603, X 3 C4, C8, C3 CAP, pf, 0805, 00 V, X7R 3 C5 CAP, 0 UF, 6 V, TANTALUM C5 CAP, 6.8 pf, ±0.25 pf, 00 V, 0603 C9, C4 CAP,.0 UF, 00V, 0% X7R, 20 2 C0 CAP, 33 UF, 20%, G CASE J, J2 CONN, SMA, PANEL MOUNT JACK, FLANGE 2 PCB, RT5880, THK, CGHVF006S BASEPLATE, CGH3505, 2.60 X.7 J3 HEADER RT>PLZ.CEN LK 5POS 2-56 SOC HD SCREW /4 SS 4 #2 SPLIT LOCKWASHER SS 4 Q QFN TRANSISTOR CGHVF006S Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of 5 CGHVF006S Rev 4.0

16 CGHVF006S-AMP4 Application Circuit Schematic Efficiency Gain Offset CGHVF006S-AMP4 Application Circuit Outline Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of 6 CGHVF006S Rev 4.0

17 CGHVF006S Power Dissipation De-rating Curve 2 Figure 3. - CGHVF006S Transient Power Dissipation De-Rating Curve 0 8 issipation (W) Power Di 6 4 Note Maximum CaseTemperature ( C) Note. Area exceeds Maximum Case Temperature (See Page 2). Electrostatic Discharge (ESD) Classifications Parameter Symbol Class Test Methodology Human Body Model HBM A (> 250 V) JEDEC JESD22 A4-D Charge Device Model CDM 2 (25 V to 250 V) JEDEC JESD22 C0-C Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of 7 CGHVF006S Rev 4.0

18 Source and Load Impedances D Z Source Z Load G S Frequency (GHz) Z Source Z Load j j j j j j j j j j j j Note : = 60 ma Note 2 : Impedances are extracted from source and load pull data derived from the transistor. Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of 8 CGHVF006S Rev 4.0

19 Product Dimensions CGHVF006S (Package 3 x 4 DFN) Pin Input/Output GND 2 NC 3 RF IN 4 RF IN 5 NC 6 GND 7 GND 8 NC 9 RF OUT 0 RF OUT NC 2 GND Note: Leadframe finish for 3x4 DFN package is Nickel/Palladium/Gold. Gold is the outer layer. Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of 9 CGHVF006S Rev 4.0

20 Part Number System CGHVF006S Package Power Output (W) Upper Frequency (GHz) Cree GaN High Voltage Parameter Value Units Upper Frequency 5.0 GHz Power Output 6 W Package Surface Mount - Table. Note : Alpha characters used in frequency code indicate a value greater than 9.9 GHz. See Table 2 for value. Character Code Code Value A 0 B C 2 D 3 E 4 F 5 G 6 H 7 J 8 K 9 Examples: A = 0.0 GHz 2H = 27.0 GHz Table 2. Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of 20 CGHVF006S Rev 4.0

Product Ordering Information Order Number Description Unit of Measure CGHVF006S GaN HEMT Each CGHVF006S-AMP Test board with GaN HEMT installed, 5.85-7.

4 GHz, 28 V X-Band SATCOM Each CGHVF006S-AMP3 Test board with GaN HEMT installed, 8.5-9.6 GHz, 28 V X-Band RADAR Each CGHVF006S-AMP4 Test board with GaN HEMT installed, 4.

21 Product Ordering Information Order Number Description Unit of Measure CGHVF006S GaN HEMT Each CGHVF006S-AMP Test board with GaN HEMT installed, GHz, 50 V C-Band under OQPSK Each CGHVF006S-AMP2 Test board with GaN HEMT installed, GHz, 28 V X-Band SATCOM Each CGHVF006S-AMP3 Test board with GaN HEMT installed, GHz, 28 V X-Band RADAR Each CGHVF006S-AMP4 Test board with GaN HEMT installed, GHz, 50 V 802. Each CGHVF006S-TR Delivered in Tape and Reel 250 parts / reel Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of 2 CGHVF006S Rev 4.0 Image

22 Disclaimer Specifications are subject to change without notice. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Typical parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. For more information, please contact: Sarah Miller Marketing Cree, RF Components Ryan Baker Marketing & Sales Cree, RF Components Tom Dekker Sales Director Cree, RF Components Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of 22 CGHVF006S Rev 4.0

which offers high efficiency, high gain and wide bandwidth capabilities. The CGHV27030S GaN

Rev 4.1 May 2017 CGHV27030S 30 W, DC - 6.0 GHz, GaN HEMT The CGHV27030S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) which offers high efficiency, high gain and wide